CN109104161A - Class E class radio-frequency power amplifier - Google Patents
Class E class radio-frequency power amplifier Download PDFInfo
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- CN109104161A CN109104161A CN201810947079.7A CN201810947079A CN109104161A CN 109104161 A CN109104161 A CN 109104161A CN 201810947079 A CN201810947079 A CN 201810947079A CN 109104161 A CN109104161 A CN 109104161A
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- 239000003990 capacitor Substances 0.000 claims abstract description 87
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 238000010586 diagram Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a type E class radio-frequency power amplifier, the 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS, the metal-oxide-semiconductor grid of ground connection is the input port of class E power-like amplifier；The grid for connecing the metal-oxide-semiconductor of the first inductance is connect with first capacitor, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；The drain terminal of 2nd MOS forms second output terminal after being sequentially connected in series the second capacitor and the second inductance, and second output terminal also passes through one the 4th capacity earth；The drain terminal of first MOS forms the first output end after being sequentially connected in series third capacitor and third inductance, and the first output end also passes through one the 5th capacity earth.The each metal-oxide-semiconductor of the present invention all has drain terminal output, has stronger output power, and the chip area actually occupied is suitable with traditional area of E power-like amplifier.
Description
Technical field
The present invention relates to the front end RF integrated circuits, particularly relate to a type E power-like amplifier.
Background technique
Power amplifier abbreviation power amplifier, mainly by input after relatively small-signal amplifies, output is enough for effect
Big power is pushed to load.
Traditional single-ended class E power-like amplifier as shown in Figure 1, include two concatenated metal-oxide-semiconductor M1, M2 and resistance,
The devices such as capacitor, inductance, cascade transistor can be breakdown to avoid circuit.Single-ended output so that circuit load capacity compared with
It is weak.
Fig. 2 is a kind of single-ended class E power-like amplifier of combination, is exactly by two single-ended classes shown in FIG. 1 in simple terms
E power-like amplifier carries out parallel connection, and the output power of two-way is merged to form a stronger output end by power combiner
Mouthful, to improve output power.The disadvantage is that because the single-ended class E power-like amplifier for having used two-way even more, component
It is more, occupy biggish chip area.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a type E power-like amplifier.
To solve the above problems, type E power-like amplifier of the present invention, includes resistance, the first~the
Two totally two metal-oxide-semiconductors, first~thirds totally 5 capacitors of totally 3 inductance, the first~the 5th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is the input port of class E power-like amplifier；The grid and first capacitor for connecing the metal-oxide-semiconductor of the first inductance connect
It connects, the other end ground connection of first capacitor；First resistor one terminates first capacitor, and another termination voltage VB, the voltage VB are one
Bias voltage can connect supply voltage or other bias voltages, is specifically adjusted according to circuit needs；
After the drain terminal of 2nd MOS is sequentially connected in series the second capacitor and the second inductance, second output terminal, and the second output are formed
End also passes through one the 4th capacity earth；
After the drain terminal of first MOS is sequentially connected in series third capacitor and third inductance, the first output end, and the first output are formed
End also passes through one the 5th capacity earth.
Further, first and second described metal-oxide-semiconductor is NMOS tube, and two metal-oxide-semiconductors are provided which to export, and each
Metal-oxide-semiconductor is drain terminal output.
Further, the drain terminal output of two metal-oxide-semiconductors has similar curve of output, i.e. phase is identical, only shakes
Width is different.
To solve the above problems, the present invention separately provides a type E power-like amplifier, it include resistance, the first~the
Two totally two metal-oxide-semiconductors, first~thirds totally 5 capacitors of totally 3 inductance, the first~the 5th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is the input port of class E power-like amplifier；The grid and first capacitor for connecing the metal-oxide-semiconductor of the first inductance connect
It connects, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；
After the drain terminal of 2nd MOS is also sequentially connected in series the second capacitor and the second inductance, the input of a power combiner is connected
End, and the input terminal also passes through one the 4th capacity earth；
After the drain terminal of first MOS is also sequentially connected in series third capacitor and third inductance, the another of the power combiner is connected
One input terminal, and the input terminal also passes through one the 5th capacity earth；
The output end of power combiner forms total output end of such E power-like amplifier.
Further, first and second described metal-oxide-semiconductor is NMOS tube, and two metal-oxide-semiconductors are provided which to export, and each
Metal-oxide-semiconductor is drain terminal output.
To solve the above problems, the present invention provides a type E power-like amplifier again, it include resistance, the first~the
Two totally two metal-oxide-semiconductors, the first~the second totally 4 capacitors of totally 2 inductance, the first~the 4th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is the input port of class E power-like amplifier；The grid and first capacitor for connecing the metal-oxide-semiconductor of the first inductance connect
It connects, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；
The drain terminal of 2nd MOS concatenates one second capacitor；
The drain terminal of first MOS concatenates a third capacitor；Remaining one end of second capacitor and remaining one end of third capacitor are simultaneously
One second inductance is concatenated after connection, the other end of the second inductance forms the class E power-like amplifier by the 4th capacity earth
Total output end.
Further, first and second described metal-oxide-semiconductor is NMOS tube, and two metal-oxide-semiconductors are provided which to export, and each
Metal-oxide-semiconductor is drain terminal output.
To solve the above problems, the amplifier has two input terminals the present invention also provides a type E power-like amplifier
Mouth circuit constitutes differential input end, and each Differential Input port circuit is identical, includes resistance, the first~the second totally two
Metal-oxide-semiconductor, inductance, a first~third totally 3 capacitors；
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is a Differential Input port of class E power-like amplifier；Connect the grid and first of the metal-oxide-semiconductor of the first inductance
Capacitance connection, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；
The drain terminal of 2nd MOS also one second capacitor；
The drain terminal of first MOS also connects a third capacitor；Remaining one end of second capacitor and remaining one end of third capacitor are simultaneously
The output end of Differential Input port circuit is formed after connection；
One transformer is in parallel with the 4th capacitor, and two output ends of two Differential Input port circuits are separately connected-transformer
Primary coil both ends, secondary coil one end ground connection of-transformer, the other end form total output of entire class E power-like amplifier
End, and total output end also passes through one the 5th capacity earth.
Further, first and second described metal-oxide-semiconductor is NMOS tube, and two metal-oxide-semiconductors are provided which to export, and each
Metal-oxide-semiconductor is drain terminal output.
Class E power-like amplifier of the present invention, each metal-oxide-semiconductor all has output, and each metal-oxide-semiconductor is that drain terminal is defeated
Out, there is stronger output power, and the chip area actually occupied is suitable with traditional area of E power-like amplifier.
Detailed description of the invention
Fig. 1 is the electrical block diagram of traditional single-ended class E power-like amplifier.
Fig. 2 is that the circuit structure for carrying out power combination output using two traditional single-ended class E power-like amplifiers is illustrated
Figure.
Fig. 3 is that there are two the electrical block diagrams of the class E power-like amplifier of output port for present invention tool.
Fig. 4 is the curve graph of two metal-oxide-semiconductor drain terminal voltage of class E power-like amplifier of the present invention.
Fig. 5 is that there are two two output end output voltages of the circuit of the class E power-like amplifier of output port for present invention tool
Curve graph.
Fig. 6 is that there are two the circuit structures that the class E power-like amplifier of output port carries out power combing again for present invention tool.
Fig. 7 is another type E power-like amplifier of the present invention.
Fig. 8 is a kind of class E power-like amplifier structural schematic diagram with Differential Input of the present invention.
Description of symbols
C1~C5: the first~the 5th capacitor, L1~L3: the first~third inductance, R1: first resistor, M1~M2: the first~
Second metal-oxide-semiconductor.
Specific embodiment
Type E power-like amplifier of the present invention, as shown in figure 3, including resistance, the first~the second totally two
A metal-oxide-semiconductor, first~third totally 5 capacitors of totally 3 inductance, the first~the 5th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is the input port of class E power-like amplifier；The grid and first capacitor for connecing the metal-oxide-semiconductor of the first inductance connect
It connects, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；
After the drain terminal of 2nd MOS is sequentially connected in series the second capacitor and the second inductance, second output terminal, and the second output are formed
End also passes through one the 4th capacity earth；
After the drain terminal of first MOS is sequentially connected in series third capacitor and third inductance, the first output end, and the first output are formed
End also passes through one the 5th capacity earth.
Two metal-oxide-semiconductors are provided which to export, and each metal-oxide-semiconductor is drain terminal output.
The drain terminal output of two metal-oxide-semiconductors has similar curve of output, i.e. phase is identical, and only amplitude is different.Such as
It is the voltage curve of Fig. 3 interior joint Vd1, Vd2 shown in Fig. 4.Fig. 5 is the curve of output of two output Vout1, Vout2.
Another type E power-like amplifier is to increase a power combiner, by Fig. 3 as shown in fig. 6, compared with Fig. 3
In two output ends one total output is synthesized by power combiner, improve the power of output.
Fig. 7 is another type E power-like amplifier, structure include resistance, the first~the second totally two metal-oxide-semiconductors,
The first~the second totally 4 capacitors of totally 2 inductance, the first~the 4th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is the input port of class E power-like amplifier；The grid and first capacitor for connecing the metal-oxide-semiconductor of the first inductance connect
It connects, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination voltage VB；Voltage VB is one inclined
Voltage is set, supply voltage VDD can be met, other bias voltages can also be connect.In short, can be adjusted according to circuit
It is whole.
The drain terminal of 2nd MOS concatenates one second capacitor；
The drain terminal of first MOS concatenates a third capacitor；Remaining one end of second capacitor and remaining one end of third capacitor are simultaneously
One second inductance is concatenated after connection, the other end of the second inductance forms the class E power-like amplifier by the 4th capacity earth
Total output end.
Two metal-oxide-semiconductors are NMOS tube, and each metal-oxide-semiconductor is drain terminal output.
Fig. 8 is a kind of class E power-like amplifier with Differential Input, is based on basic structure shown in Fig. 7.It is described to put
There are two the identical input port circuits of circuit structure to constitute differential input end, each Differential Input port circuit for big utensil
Comprising resistance, the first~the second totally two metal-oxide-semiconductors, inductance, a first~third totally 3 capacitors；
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end ground connection of the first MOS connects
The metal-oxide-semiconductor grid on ground is a Differential Input port of class E power-like amplifier；Connect the grid and first of the metal-oxide-semiconductor of the first inductance
Capacitance connection, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；
The drain terminal of 2nd MOS also one second capacitor；
The drain terminal of first MOS also connects a third capacitor；Remaining one end of second capacitor and remaining one end of third capacitor are simultaneously
The output end of Differential Input port circuit is formed after connection；
One transformer is in parallel with the 4th capacitor, and two output ends of two Differential Input port circuits are separately connected the first of transformer
Grade coil both ends, secondary coil one end ground connection of transformer, the other end form total output end of entire class E power-like amplifier,
And total output end also passes through one the 5th capacity earth.
Two metal-oxide-semiconductors are NMOS tube, and each metal-oxide-semiconductor is drain terminal output.
Circuit of the invention test and compare with traditional structure, as a result see the table below:
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a type E class radio-frequency power amplifier, it is characterised in that: comprising resistance, the first~the second totally two metal-oxide-semiconductors,
First~third totally 5 capacitors of totally 3 inductance, the first~the 5th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end of the first MOS is grounded, ground connection
Metal-oxide-semiconductor grid is the input port of class E power-like amplifier；The grid for connecing the metal-oxide-semiconductor of the first inductance is connect with first capacitor, the
The other end of one capacitor is grounded；First resistor one terminates first capacitor, and another termination voltage VB, the voltage VB are a biased electrical
Pressure is adjusted using connection power supply or other bias voltages according to circuit needs；
After the drain terminal of 2nd MOS is sequentially connected in series the second capacitor and the second inductance, second output terminal is formed, and second output terminal is also
Pass through one the 4th capacity earth；
After the drain terminal of first MOS is sequentially connected in series third capacitor and third inductance, the first output end is formed, and the first output end is also
Pass through one the 5th capacity earth.
2. class E class radio-frequency power amplifier as described in claim 1, it is characterised in that: first and second described metal-oxide-semiconductor is equal
For NMOS tube, two metal-oxide-semiconductors are provided which to export, and each metal-oxide-semiconductor is drain terminal output.
3. class E class radio-frequency power amplifier as claimed in claim 2, it is characterised in that: the drain terminal of two metal-oxide-semiconductors is defeated
Similar curve of output is provided, i.e. phase is identical, and only amplitude is different.
4. a type E class radio-frequency power amplifier, it is characterised in that: comprising resistance, the first~the second totally two metal-oxide-semiconductors,
First~third totally 5 capacitors of totally 3 inductance, the first~the 5th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end of the first MOS is grounded, ground connection
Metal-oxide-semiconductor grid is the input port of class E power-like amplifier；The grid for connecing the metal-oxide-semiconductor of the first inductance is connect with first capacitor, the
The other end of one capacitor is grounded；First resistor one terminates first capacitor, another termination VB；
After the drain terminal of 2nd MOS is also sequentially connected in series the second capacitor and the second inductance, the input terminal of a power combiner is connected, and
The input terminal also passes through one the 4th capacity earth；
After the drain terminal of first MOS is also sequentially connected in series third capacitor and third inductance, the another defeated of the power combiner is connected
Enter end, and the input terminal also passes through one the 5th capacity earth；
The output end of power combiner forms total output end of such E power-like amplifier.
5. class E class radio-frequency power amplifier as claimed in claim 4, it is characterised in that: first and second described metal-oxide-semiconductor is equal
For NMOS tube, two metal-oxide-semiconductors are provided which to export, and each metal-oxide-semiconductor is drain terminal output.
6. a type E class radio-frequency power amplifier, it is characterised in that: comprising resistance, the first~the second totally two metal-oxide-semiconductors,
The first~the second totally 4 capacitors of totally 2 inductance, the first~the 4th:
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end of the first MOS is grounded, ground connection
Metal-oxide-semiconductor grid is the input port of class E power-like amplifier；The grid for connecing the metal-oxide-semiconductor of the first inductance is connect with first capacitor, the
The other end of one capacitor is grounded；First resistor one terminates first capacitor, another termination VB；
The drain terminal of 2nd MOS concatenates one second capacitor；
The drain terminal of first MOS concatenates a third capacitor；After remaining one end of second capacitor and remaining one end of third capacitor are in parallel
One second inductance is concatenated, the other end of the second inductance forms the total of the class E power-like amplifier by the 4th capacity earth
Output end.
7. class E class radio-frequency power amplifier as claimed in claim 6, it is characterised in that: first and second described metal-oxide-semiconductor is equal
For NMOS tube, two metal-oxide-semiconductors are provided which to export, and each metal-oxide-semiconductor is drain terminal output.
8. a type E class radio-frequency power amplifier, it is characterised in that: there are the amplifier two input port circuits to constitute difference
Input terminal, each Differential Input port circuit include resistance, the first~the second totally two metal-oxide-semiconductors, inductance, first
~third totally 3 capacitors；
The 2nd one end MOS connects power supply by the first inductance after two metal-oxide-semiconductor series connection, and remaining one end of the first MOS is grounded, ground connection
Metal-oxide-semiconductor grid is a Differential Input port of class E power-like amplifier；Connect the grid and first capacitor of the metal-oxide-semiconductor of the first inductance
Connection, the other end ground connection of first capacitor；First resistor one terminates first capacitor, another termination VB；
The drain terminal of 2nd MOS also one second capacitor；
The drain terminal of first MOS also connects a third capacitor；After remaining one end of second capacitor and remaining one end of third capacitor are in parallel
Form the output end of Differential Input port circuit；
One transformer is in parallel with the 4th capacitor, and two output ends of two Differential Input port circuits are separately connected the primary line of transformer
Both ends, secondary coil one end ground connection of transformer are enclosed, the other end forms total output end of entire class E power-like amplifier, and
Total output end also passes through one the 5th capacity earth.
9. class E class radio-frequency power amplifier as claimed in claim 8, it is characterised in that: the four, the 5th capacitors adjustment becomes
The impedance of depressor input terminal, to meet the operating condition of class E class radio-frequency power amplifier.
10. class E class radio-frequency power amplifier as claimed in claim 8, it is characterised in that: first and second described metal-oxide-semiconductor
It is NMOS tube, two NMOS tubes are provided which to export, and each metal-oxide-semiconductor is drain terminal output.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810947079.7A CN109104161A (en) | 2018-08-20 | 2018-08-20 | Class E class radio-frequency power amplifier |
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| CN201810947079.7A CN109104161A (en) | 2018-08-20 | 2018-08-20 | Class E class radio-frequency power amplifier |
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| JIANGCHUAN REN: "A novel stacked class-E-like power amplifier with dual drain output power technique in 0.18 um RFSOI CMOS technology", 《2018 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS)》 * |
| 乐春玲: "带有工艺补偿的射频功率放大器的设计", 《中国优秀博硕士学位论文全文数据库(硕士)信息科技辑》 * |
| 程洋: "8.9 GHz高效高增益E类功率放大器设计", 《广西师范大学学报(自然科学版) 》 * |
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Application publication date: 20181228 |