CN109075238B - Method for producing an optoelectronic component and optoelectronic component - Google Patents
Method for producing an optoelectronic component and optoelectronic component Download PDFInfo
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- CN109075238B CN109075238B CN201780024117.5A CN201780024117A CN109075238B CN 109075238 B CN109075238 B CN 109075238B CN 201780024117 A CN201780024117 A CN 201780024117A CN 109075238 B CN109075238 B CN 109075238B
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 47
- 239000011347 resin Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 230000005855 radiation Effects 0.000 claims abstract description 31
- 238000004132 cross linking Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 34
- 239000000126 substance Substances 0.000 claims description 16
- 238000005266 casting Methods 0.000 claims description 12
- -1 alkaline earth metal nitride Chemical class 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000002223 garnet Substances 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 229920002050 silicone resin Polymers 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000000748 compression moulding Methods 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 238000001548 drop coating Methods 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000010345 tape casting Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000002411 thermogravimetry Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
The invention relates to a method for producing an optoelectronic component (100), comprising the following steps: A) providing a semiconductor (3) which is capable of emitting primary radiation (8), B) providing an alkoxy-functional polyorganosiloxane resin (1), and C) crosslinking the alkoxy-functional polyorganosiloxane resin (1) to form a three-dimensionally crosslinked polyorganosiloxane (4), wherein the organic content of the three-dimensionally crosslinked polyorganosiloxane (1) is at most 25% by weight.
Description
The invention relates to a method for producing an optoelectronic component. Furthermore, the invention relates to an optoelectronic component.
Optoelectronic components, such as light-emitting diodes or high-power light-emitting diodes (LEDs), usually have a transparent component formed from a polyorganosiloxane (silicone). However, these transparent parts do not have sufficient temperature stability and blue light stability (blaulichstablite ä t). Furthermore, other materials are not sufficiently blue-light stable and temperature stable as transparent components, or require processing temperatures that exceed the permissible limits for LED chips, such as glass. The less advantageous properties of conventional polyorganosiloxanes therefore lead to limitations in optoelectronic components due to the lack of alternatives. The limited temperature stability and blue light stability of the conventional polyorganosiloxanes used lead to lower maximum ambient temperatures, smaller thermal resistances for the heat sink and the provision of small rated currents. The high permeability may additionally be a reason for limiting the use of optoelectronic components. For example, atmospheres with high sulfur or sulfide content or the presence of volatile organic compounds can diffuse into optoelectronic components and damage them. Furthermore, due to the high thermal expansion of conventional silicones (250 to 300 ppm), specific shell matching is required, for example to avoid delamination. Conventional polyorganosiloxanes which are present in particular in the desired shell shape are crosslinked by noble metal-catalyzed addition. The polymer chains are bonded in the course of curing, in which the Si-H bonds react with the C-C double bonds in the polyaddition and form Si-C bonds.
It is an object of the present invention to provide a method of manufacturing an optoelectronic component, which method provides a stable optoelectronic component. In particular, the optoelectronic component produced is temperature-stable and/or blue-light stable. Furthermore, it is an object of the present invention to provide optoelectronic components which are stable, in particular temperature-stable and/or blue-light stable.
The object is achieved by a method for producing an optoelectronic component according to independent claim 1. Advantageous embodiments and developments of the invention are the subject matter of the dependent claims. The object is also achieved by an optoelectronic component according to claim 15.
In at least one embodiment, the method for producing an optoelectronic component has the following steps:
A) providing a semiconductor, which is capable of emitting primary radiation,
B) providing an alkoxy-functional polyorganosiloxane resin, in particular a methoxy-functional polyorganosiloxane resin, and
C) crosslinking the alkoxy-functional polyorganosiloxane resin, in particular the methoxy-functional polyorganosiloxane resin, to form a three-dimensionally crosslinked polyorganosiloxane, wherein the organic content of the three-dimensionally crosslinked polyorganosiloxane is at most 25 wt.%, i.e. at most 25 wt.%.
The inventors have recognized that by the methods described herein, components may be produced that have improved temperature stability and/or blue light stability compared to components with conventional silicones. The crosslinked polyorganosiloxanes can be molded as lenses, housings, casting materials and/or converter elements and are outstandingly used in high-power LEDs.
According to at least one embodiment, the optoelectronic component has a semiconductor. The semiconductor comprises a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor is preferably based on a III-V compound semiconductor material. The semiconductor material is preferably a nitride compound semiconductor material, such as AlnIn1-n-mGamN or phosphorus compound semiconductor materials, e.g. AlnIn1-n-mGamP, wherein n is greater than or equal to 0 and less than or equal to 1, m is greater than or equal to 0 and less than or equal to 1, and n + m is less than or equal to 1. Also, the semiconductor material may be AlxGa1-xAs, wherein x is more than or equal to 0 and less than or equal to 1. The semiconductor layer sequence may have a dopant and an additional component. For the sake of simplicity, however, only the main constituents of the crystal lattice of the semiconductor layer sequence, i.e. Al, As, Ga, In, N or P, are explained, even if they can be replaced and/or supplemented In part by small amounts of further substances.
The semiconductor layer sequence comprises an active layer having at least one pn junction and/or having one or more quantum well structures. During operation of the semiconductor or semiconductor chip, electromagnetic radiation is generated in the active layer. The semiconductor is thus capable of emitting primary radiation. In particular, the emission of the primary radiation takes place through the radiation main surface of the semiconductor. In particular, the main radiation surface has an orientation perpendicular to the growth direction of the semiconductor layer sequence of the optoelectronic component. The side of the semiconductor chip here and in the following represents a side having an orientation parallel to the growth direction of the semiconductor layer sequence of the optoelectronic component. The wavelength of the primary radiation or the wavelength maximum of the primary radiation preferably lies in the ultraviolet and/or visible and/or IR spectral range, in particular at wavelengths comprised between 420 nm and 800 nm, for example at wavelengths comprised between 440 nm and 480 nm.
According to at least one embodiment, the semiconductor is a light emitting diode, LED for short. The semiconductor is then preferably arranged for emitting blue, green and red light. In the case of the converter element, the optoelectronic component is in particular provided for emitting white mixed light.
According to at least one embodiment, the method has a method step B) of providing an alkoxy-functional polyorganosiloxane resin (1), in particular a methoxy-functional polyorganosiloxane resin. The alkoxy-functional polyorganosiloxane resin may have an alkoxy content of from 15 wt% to including 40 wt%, particularly from 17 wt% to including 35 wt%, for example 17 wt% and 35 wt%.
According to at least one embodiment, the alkoxy-functional polyorganosiloxane resin is an alkoxy-functional methylphenyl silicon resin having an alkoxy content of 17 +/-4 weight percent. In particular, the alkoxy-functional polyorganosiloxane resins cure at room temperature by permeation of atmospheric moisture via hydrolysis and/or condensation reactions by means of catalysis. Suitable catalysts are, for example, titanates, which are combined with strong bases.
According to at least one embodiment, the alkoxy-functionalized polyorganosiloxane resin is an alkoxy-functionalized methyl silicone resin having an alkoxy content of 35 +/-4 weight percent. In particular, the alkoxy-functional polyorganosiloxane resin is a dimethyl silicone resin.
The alkoxy-functional polyorganosiloxane resins have in particular the positive property during the curing and/or crosslinking process that they lose a little volume or that their crosslinked products can occupy a small volume and diffuse out. This prevents cracks and defects from not forming at the thickness of the layer that occurs. Furthermore, the resulting three-dimensionally crosslinked polyorganosiloxanes have a sufficiently high flexibility which allows crack-free production of components with a thickness of, for example, up to 300 μm.
According to at least one embodiment, phenyl-and/or methyl-substituted siloxanes are used in method step B), which form polyorganosiloxanes in a condensation reaction with the surrounding moisture. Layers of several μm, in particular with a layer thickness of 20 to 80 μm, are also possible here without cracks or defects being formed. The three-dimensionally crosslinked polyorganosiloxanes are distinctly different from the conventional silicones commonly used today for the encapsulation of optoelectronic components. The three-dimensionally crosslinked polyorganosiloxanes can be identified by means of IR spectroscopy or by determining their hardness and/or by their thermal stability.
According to at least one embodiment, step B) is carried out by means of casting, Drop casting (Drop casting), spin coating, spray coating, compression molding and/or knife coating.
According to at least one embodiment, the method has a method step C) of crosslinking the alkoxy-functional polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane. In particular, the three-dimensionally crosslinked polyorganosiloxanes are shaped in the form of narrow meshes and form narrow-meshed three-dimensional Si-O networks. Narrow cell here and hereinafter means that the crosslinked polyorganosiloxane has an organic content of not more than 25% by weight after curing. In particular, the organic content of the three-dimensionally crosslinked polyorganosiloxane is comprised between 13% and 18% by weight or between 14% and 16% by weight, for example 15% by weight. The organic content can be determined in air by means of thermogravimetric analysis (TGA). In particular, the determination of the organic content is carried out at a temperature of 500 ℃ or 1000 ℃. The ashing process can be carried out up to 500 c or up to 1000 c until a weight constant is reached. The organic component may for example be a methyl and/or phenyl group.
According to at least one embodiment, the crosslinking in step C) is condensation crosslinking. The alkoxy-functional polyorganosiloxane resin is not crosslinked by means of an addition reaction.
According to at least one embodiment, the crosslinked polyorganosiloxane has a shore a hardness of greater than 70. The determination of the Shore hardness is specified in the standards DIN-ISO 868 and DIN-ISO 7619-1.
According to at least one embodiment, the crosslinked polyorganosiloxanes have a high temperature resistance. In particular, having CH3Polyorganosiloxanes with the group as organic group have a temperature resistance of up to 250 ℃ and have CH3Polyorganosiloxanes with groups and phenyl groups as organic groups have a temperature resistance of up to 280 ℃.
According to at least one embodiment, at least one filler is added to the crosslinked polyorganosiloxane or alkoxy-functionalized polyorganosiloxane resin. In particular, the filler is titanium dioxide. The crosslinked polyorganosiloxanes with titanium dioxide have in particular a temperature resistance of up to 380 ℃.
According to at least one embodiment, the crosslinked polyorganosiloxane or the alkoxy-functionalized polyorganosiloxane resin is mixed with at least one luminophore, in particular a garnet. In particular, the crosslinked polyorganosiloxanes have a temperature resistance of up to 400 ℃.
According to at least one embodiment, the crosslinking in process step C) is carried out by means of temperature and/or moisture, in particular atmospheric moisture or UV radiation. In particular, the crosslinking in process step C) is carried out at a temperature of from room temperature to 220 ℃. In particular, the crosslinking in process step C) is carried out by means of temperature and moisture.
According to at least one embodiment, the mass of crosslinked polyorganosiloxane produced in step C) is constant at temperatures up to 200 ℃. Constant means here and in the following that there is a maximum mass difference of < 5% or 2% or 1%. By mass difference is meant here the difference in mass of the polyorganosiloxane before and after crosslinking.
According to at least one embodiment, the crosslinked polyorganosiloxane has the following structural formula:
here, each R is methyl and/or phenyl. The organic group ensures good processability and compatibility with the filler.
According to at least one embodiment, the crosslinked polyorganosiloxane is molded as a transducer element or the alkoxy-functionalized polyorganosiloxane resin is molded as a transducer element. The crosslinked polyorganosiloxane is disposed or disposed in the beam path of the semiconductor. In particular, the converter element is arranged or arranged in direct mechanical and/or electrical and/or thermal contact with said semiconductor. In particular, the converter element is arranged directly or is arranged directly on the radiation main surface of the semiconductor chip.
According to at least one embodiment of the method, it additionally has a step D):
the alkoxy-functionalized polyorganosiloxane resin is applied as a converter element at least to a radiation main surface of the semiconductor, wherein the converter element has at least one phosphor which converts primary radiation into secondary radiation. In particular, the alkoxy-functional polyorganosiloxane resin is arranged as a converter element on the radiation main surface and on the side surfaces of the semiconductor chip. Alternatively, the alkoxy-functional polyorganosiloxane resin is arranged as a converter element only on the radiation main surface of the semiconductor chip.
According to at least one embodiment of the method, the alkoxy-functional polyorganosiloxane resin is applied in step D) and the crosslinked polyorganosiloxane is shaped as a converter element and arranged directly on the radiation main surface of the semiconductor. In particular, the converter element additionally has at least one phosphor, which converts the primary radiation of the semiconductor into secondary radiation. In particular, the secondary radiation has another wavelength maximum, preferably a longer wavelength maximum than the primary radiation.
According to at least one embodiment, the phosphor is selected from the group consisting of YAG phosphors, LuAG phosphors, garnets, orthosilicates, alkaline earth metal nitrides, Calsine and combinations thereof. In particular, the luminescent substance is an aluminum garnet, for example YAG: Ce or LuAG. Furthermore, the phosphor can have a minimum content of 50% by weight in the crosslinked polyorganosiloxane. In other words, at least 50% by weight of the luminescent substance, preferably aluminum garnet, alkaline earth metal nitride or a combination thereof, is dispersed in the crosslinked polyorganosiloxane after method step C).
According to at least one embodiment, the method has a further method step: at least one luminescent substance is incorporated into the crosslinked polyorganosiloxane or the alkoxy-functionalized polyorganosiloxane resin. In particular, the luminescent substance is aluminum garnet and is dispersed in the crosslinked polyorganosiloxane in a content of at most 25, 15, 10, 8, 5, 3 or 2% by weight.
According to at least one embodiment, the method has method step E): the cross-linked polyorganosiloxane is arranged as a volume casting (Volumenverguss) at least in regions in a recess of a housing of an optoelectronic component, wherein the semiconductor is surrounded in a form-fitting manner by the cross-linked polyorganosiloxane and has a thickness of at least 250 [ mu ] m in cross section, wherein the light-emitting substance is an aluminum garnet, an alkaline earth metal nitride or a combination thereof, wherein the light-emitting substance has a content of at most 25 wt.% in the cross-linked polyorganosiloxane (4). If the luminescent substance is a combination of aluminum garnet and an alkaline earth metal nitride, "maximum 25 wt%" means the sum of the two weight contents of the luminescent substance.
In particular, the thickness in the cross section has a value of at least 250 μm, for example 300 μm.
According to at least one embodiment, the alkoxy-functionalized polyorganosiloxane resin is produced by hydrolysis of a precursor.
According to at least one embodiment, the crosslinked polyorganosiloxane is disposed in the beam path of a semiconductor.
According to at least one embodiment, the crosslinked polyorganosiloxane is molded as a housing and/or a lens.
According to at least one embodiment, the converter element is molded as a volume casting. Alternatively, the converter element is shaped as a layer having a layer thickness of from 20 μm to 100 μm.
Further, an optoelectronic component is provided. The optoelectronic component is preferably manufactured by the method described above. This means that all features disclosed for the method are also disclosed for the optoelectronic component and vice versa.
Further advantages, advantageous embodiments and further developments result from the examples described below in connection with the figures.
Figures 1A to 1C show a method of manufacturing an optoelectronic component according to one embodiment,
figures 2A and 2B show the structure of silicone and glass according to the comparative example,
FIG. 3 shows a thermogravimetric analysis according to an embodiment, and
fig. 4A and 4B each show an optoelectronic component according to one embodiment.
In the exemplary embodiments and figures, elements which are identical, homogeneous or functionally identical can each be provided with the same reference symbols. The components shown and their dimensional ratios to each other are not to be considered to be true to scale. On the contrary, various elements such as layers, parts, components and regions may be shown exaggerated for a better depiction and/or for a better understanding.
Fig. 1A to 1C show a method of manufacturing an optoelectronic component 100 according to one embodiment. Fig. 1A shows a semiconductor 3 provided on a substrate or carrier 2. The carrier 2 may be, for example, a circuit board or be made of glass. The semiconductor 3 may be arranged in the recess 14 within the housing 21. In fig. 1B is shown that an alkoxy-functionalized polyorganosiloxane resin 1 can be provided. Here, the alkoxy-functional polyorganosiloxane resin is arranged into the recess 14 of the housing 21. In particular, the alkoxy-functional polyorganosiloxane resin 1 forms a casting. Finally, as shown in FIG. 1C, the alkoxy-functional polyorganosiloxane resin 1 can be crosslinked 7. Crosslinking 7 can be carried out, for example, thermally and/or by means of UV radiation, optionally under atmospheric moisture. Thereby forming a three-dimensionally crosslinked polyorganosiloxane 4 from the alkoxy-functionalized polyorganosiloxane resin 1. The three-dimensionally crosslinked polyorganosiloxanes 4 have a narrow-meshed three-dimensional SiO network and are in particular extremely temperature-stable and/or blue-light-stable. In particular, the crosslinked polyorganosiloxane 4 has fewer organic groups than a conventional silicone (see fig. 2A, conventional silicone). The organic content is up to 25% by weight, based on the total content of crosslinked polyorganosiloxane 4. The permeability of the crosslinked polyorganosiloxane 4 is less compared to conventional silicones. Furthermore, the crosslinked polyorganosiloxane 4 is harder compared to conventional silicones, which are flexible. The crosslinked polyorganosiloxane 4 has a temperature stability of > 200 ℃ compared to conventional silicones, which have a temperature stability of approximately 150 ℃. On the other hand, a higher processing temperature than conventional silicones can be selected in the case of the use of crosslinked polyorganosiloxanes 4, since they are more temperature-stable.
The crosslinked polyorganosiloxane 4 has an intermediate position between the conventional silicone structure and the glass or fused silicate structure in terms of the degree of crosslinking or the crosslinking density (see fig. 2A and 2B).
The alkoxy-functional polyorganosiloxane resin 1 can be cast. During casting, several milliliters of the alkoxy-functional polyorganosiloxane resin 1 can be filled into a container, for example, with a thickness of > 2 mm, crosslinked and yield a crosslinked polyorganosiloxane 4.
In the so-called drop coating process, it is possible, for example, to apply drops of the alkoxy-functional polyorganosiloxane resin 1 to the support, in particular to produce a layer thickness of about 0.5 mm or about 0.3 mm.
By means of spin coating, thin layer thicknesses and film thicknesses of < 10 or < 25 μm can be produced.
Figure 3 shows a thermogravimetric analysis (TGA) according to an embodiment. From the graph, it can be seen that only a small mass loss is observed at temperatures < 200 ℃. Above 600 ℃, a mass loss of about 15 to about 85 wt.% can be observed. Depending on the heating rate, a maximum of 25% by weight loss can be observed even at 500 ℃ or 1000 ℃ (not shown here).
Fig. 4A and 4B each show a schematic side view of an optoelectronic component 100 according to various embodiments. In particular, optoelectronic component 100 is a light emitting diode, LED for short.
In the embodiment shown in fig. 4A, the crosslinked polyorganosiloxane 4 wraps the entire surface of the semiconductor 3. In particular, the crosslinked polyorganosiloxane 4 has a constant thickness around the periphery of the semiconductor 3.
According to fig. 4B, the semiconductor 3 is arranged in the recess 14. The recess 14 can be filled with a casting 9 (crosslinked polyorganosiloxane 4 as matrix material). In the crosslinked polyorganosiloxane 4, at least one luminescent substance 13 can be embedded, which is provided for converting primary radiation into secondary radiation. In other words, the crosslinked polyorganosiloxane 4 is disposed directly around the semiconductor 3.
The embodiments and their features described in connection with the figures may also be combined with each other according to further embodiments, even when such combinations are not explicitly shown in the figures. Furthermore, the embodiments described in connection with the figures may have additional or alternative features according to what is described in the general section.
The invention is not limited by the description of the embodiments. Rather, the invention comprises each novel feature and each combination of features, which in particular comprises each combination of features in the claims, even when this feature or this combination itself is not explicitly shown in the claims or in the embodiments. This patent application claims priority from US patent application 62/324,028, the disclosure of which is hereby incorporated by reference.
List of reference numerals
100 optoelectronic component
1 alkoxy-functionalized polyorganosiloxane resins
2 substrate or support
3 semiconductor
4-crosslinked polyorganosiloxanes
5 lens
6 reflector
7 crosslinking
8 emission of primary radiation
9 volume casting
10 emission of secondary radiation
11 transducer element
12 main radiating face
13 luminescent substance
14 recess
21 housing.
Claims (14)
1. Method for producing an optoelectronic component (100), comprising the following steps:
A) providing a semiconductor (3) capable of emitting primary radiation (8),
B) providing an alkoxy-functional polyorganosiloxane resin (1), and
C) crosslinking the alkoxy-functional polyorganosiloxane resin (1) to form a three-dimensionally crosslinked polyorganosiloxane (4), wherein the organic content of the three-dimensionally crosslinked polyorganosiloxane (4) is at most 25% by weight,
wherein the alkoxy-functional polyorganosiloxane resin (1) is an alkoxy-functional methyl phenyl silicon resin having an alkoxy content of 17 +/-4% by weight, or
Wherein the alkoxy-functional polyorganosiloxane resin (1) is an alkoxy-functional methyl silicone resin having an alkoxy content of 35 +/-4% by weight.
2. The method according to claim 1, wherein the first step is carried out in a single step,
wherein the crosslinking in step C) is condensation crosslinking.
3. The method according to claim 1 or 2,
wherein the organic content of the three-dimensionally crosslinked polyorganosiloxane (4) is from 13% by weight inclusive to 18% by weight inclusive.
4. The method according to claim 1 or 2, wherein the crosslinked polyorganosiloxane (4) has a shore a hardness of more than 70.
5. The method according to claim 1 or 2,
wherein the crosslinked polyorganosiloxane (4) is arranged in the beam path of the semiconductor (3).
6. The process according to claim 1 or 2, additionally having a step D):
an alkoxy-functionalized polyorganosiloxane resin (4) is applied as a converter element (11) to a radiation main surface (12) of the semiconductor (3), wherein the converter element (11) has at least one luminescent substance (13) which converts primary radiation (8) into secondary radiation (10).
7. Method according to claim 6, wherein the luminescent substance is an aluminum garnet, an alkaline earth metal nitride or a combination thereof, wherein the luminescent substance has a content of minimum 50 wt. -% in the crosslinked polyorganosiloxane (4).
8. The process according to claim 6, additionally having step E):
the cross-linked polyorganosiloxane (4) is arranged as a volume casting (9) at least in regions in a recess (14) of a housing of an optoelectronic component (100), wherein the semiconductor (3) is surrounded in a form-fitting manner by the cross-linked polyorganosiloxane (4) and has a thickness of at least 250 [ mu ] m in cross section, wherein the light-emitting substance is aluminum garnet, an alkaline earth metal nitride or a combination thereof, wherein the light-emitting substance has a content of at most 25 wt.% in the cross-linked polyorganosiloxane (4).
9. The method according to claim 1 or 2,
wherein the crosslinked polyorganosiloxane (4) is molded as a housing (21) or a lens (5).
10. The method according to claim 1 or 2,
wherein step B) is carried out by means of casting, drop coating, spin coating, knife coating, spray coating or compression molding.
11. The method according to claim 1 or 2,
wherein the crosslinking (7) in step C) is carried out by means of temperature and/or humidity or UV radiation.
12. The method according to claim 1 or 2,
wherein the alkoxy-functionalized polyorganosiloxane resin is produced by hydrolysis of a precursor.
13. Optoelectronic component (100) obtainable by a method according to any one of claims 1 to 12.
14. Method for producing an optoelectronic component (100), comprising the following steps:
A) providing a semiconductor (3) capable of emitting primary radiation (8),
B) providing an alkoxy-functional polyorganosiloxane resin (1), and
C) crosslinking the alkoxy-functional polyorganosiloxane resin (1) to form a three-dimensionally crosslinked polyorganosiloxane (4), wherein the organic content of the three-dimensionally crosslinked polyorganosiloxane (4) is at most 25% by weight, wherein the three-dimensionally crosslinked polyorganosiloxane is shaped in the form of a closed mesh,
wherein the alkoxy-functional polyorganosiloxane resin (1) is an alkoxy-functional methyl phenyl silicon resin having an alkoxy content of 17 +/-4% by weight, or
Wherein the alkoxy-functional polyorganosiloxane resin (1) is an alkoxy-functional methyl silicone resin having an alkoxy content of 35 +/-4% by weight.
Applications Claiming Priority (3)
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| US201662324028P | 2016-04-18 | 2016-04-18 | |
| US62/324028 | 2016-04-18 | ||
| PCT/EP2017/058984 WO2017182390A1 (en) | 2016-04-18 | 2017-04-13 | Method for producing an optoelectronic component, and optoelectronic component |
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| CN109075238A CN109075238A (en) | 2018-12-21 |
| CN109075238B true CN109075238B (en) | 2021-10-12 |
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| US (1) | US10833231B2 (en) |
| JP (2) | JP2019514201A (en) |
| CN (1) | CN109075238B (en) |
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| WO2018002334A1 (en) | 2016-06-30 | 2018-01-04 | Osram Opto Semiconductors Gmbh | Wavelength converter having a polysiloxane material, method of making, and solid state lighting device containing same |
| US10570333B2 (en) * | 2017-05-23 | 2020-02-25 | Osram Opto Semiconductors Gmbh | Wavelength conversion element, light emitting device and method for producing a wavelength conversion element |
| US10727379B2 (en) | 2018-02-16 | 2020-07-28 | Osram Opto Semiconductors Gmbh | Methods for producing a conversion element and an optoelectronic component |
| US10590339B2 (en) | 2018-05-16 | 2020-03-17 | Osram Opto Semiconductors Gmbh | Method for producing a converter element, converter element and light emitting device |
| US11552228B2 (en) | 2018-08-17 | 2023-01-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| US11349051B2 (en) | 2019-05-10 | 2022-05-31 | Osram Opto Semiconductors Gmbh | Optoelectronic device and method of producing an optoelectronic device |
| DE102020206897A1 (en) | 2020-06-03 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT |
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| DE112017002058A5 (en) | 2019-01-03 |
| JP2019514201A (en) | 2019-05-30 |
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