[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN109075041B - Method for implanting a processing substance and a dopant into a workpiece and device for implanting a processing substance and a dopant into a workpiece - Google Patents

Method for implanting a processing substance and a dopant into a workpiece and device for implanting a processing substance and a dopant into a workpiece Download PDF

Info

Publication number
CN109075041B
CN109075041B CN201680084099.5A CN201680084099A CN109075041B CN 109075041 B CN109075041 B CN 109075041B CN 201680084099 A CN201680084099 A CN 201680084099A CN 109075041 B CN109075041 B CN 109075041B
Authority
CN
China
Prior art keywords
ions
workpiece
neon
source gas
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680084099.5A
Other languages
Chinese (zh)
Other versions
CN109075041A (en
Inventor
具本雄
维克拉姆·M·博斯尔
约翰·A·弗龙梯柔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN109075041A publication Critical patent/CN109075041A/en
Application granted granted Critical
Publication of CN109075041B publication Critical patent/CN109075041B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method of implanting a processing substance and a dopant into a workpiece and an apparatus for use with the workpiece are disclosed. Unexpectedly, introducing a noble gas, such as argon or neon, into the ion source chamber can increase the percentage of desired ion species while reducing the amount of contaminants and halogen-containing ions. This is particularly beneficial in ion implanters that do not have mass analysis, where all ions are implanted into the workpiece. In one embodiment, a first source gas comprising a process species and a halogen is introduced into an ion source chamber, and a second source gas comprising a hydride and a third source gas comprising a noble gas are also introduced. The combination of these three source gases may produce an ion beam having a higher percentage of pure process species ions than would occur without the use of the third source gas.

Description

Method for implanting a processing substance and a dopant into a workpiece and apparatus for use with a workpiece
Technical Field
Embodiments of the present invention relate to an apparatus and various methods for improving ion beam quality in an ion implantation system, and more particularly, to a method of implanting a processing substance and a dopant into a workpiece and an apparatus for a workpiece.
Background
Semiconductor workpieces are often implanted with dopant species to produce a desired conductivity. For example, a solar cell may be implanted with a dopant species to create an emitter region. This implantation can be performed using a variety of different mechanisms. In one embodiment, an ion source is used.
To improve process efficiency and reduce cost, in some embodiments, ions extracted from the ion source are accelerated directly toward the workpiece without any mass analysis. In other words, ions generated in the ion source are accelerated and implanted directly into the workpiece. A mass analyzer is used to remove unwanted species from the ion beam. The removal by the mass analyzer implies that all ions extracted from the ion source will be implanted into the workpiece. Thus, unwanted ions may also be generated within the ion source, which are subsequently implanted into the workpiece.
This phenomenon is most likely to occur when the source gas is a halogen-based compound such as a fluoride. Fluorine ions and neutrals (metastable or excited) may react with the inner surface of the ion source, releasing unwanted ions such as silicon, oxygen, carbon, and aluminum, as well as heavy metals present as impurity elements. In addition, halogen ions may also be implanted into the workpiece.
Therefore, an apparatus and method that improves beam quality would be beneficial, particularly for embodiments in which halogen based source gases are employed.
Disclosure of Invention
The invention discloses an apparatus and various methods for improving the ion beam quality of halogen source gas. Unexpectedly, introducing a noble gas, such as argon or neon, into the ion source chamber can increase the percentage of desired ion species while reducing the amount of contaminants and halogen-containing ions. This is particularly beneficial in ion implanters that do not have mass analysis, where all ions are implanted into the workpiece. In one embodiment, a first source gas comprising a process species and a halogen is introduced into an ion source chamber, and a second source gas comprising a hydride and a third source gas comprising a noble gas are also introduced. The combination of these three source gases may produce an ion beam having a higher percentage of pure process species ions than would occur without the use of the third source gas.
In one embodiment, a method of implanting a process species into a workpiece is disclosed. The method comprises the following steps: energizing a first source gas comprising a process species and fluorine and neon in a chamber to form a plasma in the chamber; and extracting ions from the plasma and directing the ions toward the workpiece, wherein the amount of pure process species ions extracted from the plasma is increased by at least 5% of the total process species-containing ions compared to a baseline when neon is not used. In certain embodiments, the amount of pure process species ions extracted from the plasma as a percentage of all process species-containing ions is increased by at least 10% as compared to the baseline. In certain embodiments, the ratio of fluorine ions to process species ions extracted from the plasma is reduced by at least 5% as compared to the baseline. In certain embodiments, the beam current of pure process species ions is increased by at least 10% compared to the baseline.
In another embodiment, a method of implanting a dopant into a workpiece is disclosed. The method comprises the following steps: energizing a first source gas comprising a dopant and fluorine, a second source gas comprising hydrogen and at least one of germanium and silicon, and neon in a chamber to form a plasma in the chamber; and accelerating ions from the plasma toward the workpiece without using mass analysis, wherein between 20% and 90% of a total volume of gas introduced comprises neon, and wherein a composition of the ions extracted from the plasma is affected by the introduction of neon. In certain embodiments, between 25% and 50% of the total volume of gas introduced comprises neon. In certain embodiments, the dopant comprises boron.
In another embodiment, an apparatus for processing a workpiece is disclosed. The apparatus comprises: an ion source having a chamber defined by a chamber wall, wherein the ion source generates a plasma in the chamber; a first source gas container containing a process species and fluorine in communication with the chamber; a second source gas container containing hydrogen and at least one of silicon and germanium in communication with the chamber; a third source gas container containing neon in communication with the chamber; and a workpiece support to hold the workpiece, wherein the apparatus for processing a workpiece introduces neon into the chamber in an amount sufficient to increase the amount of pure process species ions extracted from the plasma by at least 5% of the percentage of all process species-containing ions compared to a baseline when neon is not used. In certain embodiments, the dopant comprises boron. In certain embodiments, ions from the plasma are directed to the workpiece and not mass analyzed. In certain embodiments, 20% to 90% of the total amount of gas introduced into the chamber comprises neon. In some embodiments, the amount of neon is sufficient to increase the beam current of pure process species ions by at least 10% relative to the baseline.
Drawings
For a better understanding of the present invention, reference is made to the accompanying drawings, which are incorporated herein by reference, and in which:
1A-1C illustrate a workpiece processing system according to various embodiments;
FIG. 2A is a representative graph of ion beam current as a function of argon gas concentration;
FIG. 2B is a second graph of ion beam current as a function of argon gas concentration;
fig. 3 shows an implant system according to another embodiment;
FIG. 4A is a representative graph of ion beam current as a function of neon gas concentration;
FIG. 4B is a second graph of ion beam current as a function of neon gas concentration;
FIG. 5 is another embodiment of a workpiece processing system; and
fig. 6 is another embodiment of a workpiece processing system.
Detailed Description
As described above, ionization of halogen-based species, such as fluoride, can result in particles released from the interior surface of the ion source being implanted into the workpiece. These contaminants may include aluminum, carbon, oxygen, silicon, fluorine-based compounds, and other unwanted substances, including heavy metals present as impurity elements. One approach to address the damage caused by free halogen ions may be to introduce additional source gases.
Fig. 1A-1C illustrate various embodiments of a workpiece processing system that can introduce multiple source gases to an ion source. In each of these figures, there is an ion source 100. The ion source 100 includes a chamber 105 defined by a plasma chamber wall 107, the plasma chamber wall 107 may be constructed of graphite or another suitable material. The chamber 105 may be supplied with one or more source gases stored in one or more source gas containers, such as the first source gas container 170, via the gas inlet 110. The source gas may be powered by the rf antenna 120 or another plasma generating mechanism to generate a plasma. The rf antenna 120 is in electrical communication with an rf power source (not shown) that supplies power to the rf antenna 120. A dielectric window 125, such as a quartz window or an alumina window, may be disposed between the rf antenna 120 and the interior of the chamber 105. The chamber 105 also includes an aperture 140 through which ions may pass. A negative voltage is applied to the extraction suppression electrode 130 disposed outside the aperture 140 to extract positively charged ions in the form of an ion beam 180 from the plasma in the chamber 105 through the aperture 140 and directed toward a workpiece 160, which may be disposed on a workpiece support 165. A ground electrode 150 may also be used. In certain embodiments, the aperture 140 is located on a side of the chamber 105 opposite the side including the dielectric window 125. As shown in fig. 1A, a second source gas may be stored in a second source gas container 171 and introduced into the chamber 105 through a second gas inlet 111. A third source gas may be stored in a third source gas container 172 and introduced into the chamber 105 via the third gas inlet 112. In another embodiment, shown in FIG. 1B, a second source gas may be stored in second source gas container 171 and a third source gas may be stored in third source gas container 172. Both the second source gas and the third source gas may be introduced into the chamber 105 through the same gas inlet 110 used for the first source gas. In another embodiment, shown in FIG. 1C, the second source gas and the third source gas may be mixed with the first source gas in a single gas container 178. This mixture of gases is then introduced into the chamber 105 via the gas inlet 110.
In any of these embodiments, the first source gas, the second source gas, and the third source gas may be introduced into the chamber 105 simultaneously or sequentially. Although these figures illustrate the use of three different source gases, the present invention is not limited to any particular number. These figures are intended to illustrate various embodiments in which multiple source gases may be introduced into chamber 105. However, other embodiments are possible and within the scope of the invention.
Fig. 1A to 1C illustrate an embodiment of a workpiece processing system. However, the present invention is not limited to these examples. For example, fig. 5 illustrates another embodiment of a workpiece processing system, which may be a beam line ion implanter 500. The beam-line ion implanter 500 includes an ion source 510, wherein a source gas is introduced into the ion source 510. The ion source 510 may include a chamber having an aperture through which ions may be extracted. The first source gas may be stored in the first source gas container 170, the second source gas may be stored in the second source gas container 171, and the third source gas may be stored in the third source gas container 172. These source gases may be introduced to the ion source 510 via the gas inlet 110. Of course, these source gases may be introduced in other ways, such as the ways shown in fig. 1A and 1C.
The ion source 510 generates ions by energizing a source gas into a plasma. In certain embodiments, an Indirectly Heated Cathode (IHC) may be used, although other mechanisms may be used to generate the plasma. Ions from the plasma are then accelerated through an aperture in the ion source 510 as an ion beam 180. The ion beam 180 is then directed to a set of beamline components 520 that manipulate the ion beam 180. For example, the beamline assembly 520 may accelerate, decelerate, or redirect ions from the ion beam 180. In certain embodiments, the beamline assembly 520 may comprise a mass analyzer. The mass analyzer may be used to remove unwanted species from the ion beam 180 before the unwanted species impact the workpiece 160. The workpiece 160 may be disposed on a workpiece support 165.
Figure 6 shows another workpiece processing apparatus that can be used with the present invention-this workpiece processing apparatus 600 includes a chamber 605 defined by a plasma chamber wall 607. Like fig. 1B, the chamber 605 may be in communication with the first source gas container 170, the second source gas container 171, and the third source gas container 172 through the gas inlet 110. However, in other embodiments, the source gases may be configured as shown in FIG. 1A or FIG. 1C. Further, like fig. 1B, the apparatus may include a dielectric window 625 on which is disposed an rf antenna 620. Like fig. 1B, the rf antenna is used to generate plasma within the chamber 605. Of course, other plasma generators may be used. In this workpiece processing apparatus 600, a workpiece 160 is disposed within a chamber 605. The platen 610 is used to hold the workpiece 160. In some embodiments, the platen 610 may be biased to accelerate ions from the plasma in the form of an ion beam 180 toward the workpiece 160.
The first source gas, also referred to as the source gas, may contain a dopant such as boron in combination with fluorine. Thus, the feed gas may be DF n Or D m F n Wherein D represents a dopant atom which may be boron, gallium, phosphorus, arsenic or another group 3 or group 5 element. In other embodiments, the first source gas may comprise a process species combined with fluorine. Thus, although the term "dopant" is used throughout this disclosure, it should be understood that there are other process species that may be used and that may not be dopants. Thus, the first source gas comprises the process species and fluorine. In certain embodiments, the processing species is a dopant.
The second source gas may be XH n Or X m H n Wherein H is hydrogen. X may be a dopant species, such as any of the dopant species described above. Alternatively, X may also be an atom that does not affect the conductivity of the workpiece 160. For example, if the workpiece 160 comprises silicon, X may be a group 4 element, such as silicon and germanium. The third source gas may be a noble gas such as helium, argon, neon, krypton, and xenon.
In other words, the first source gas may be BF 3 Or B 2 F 4 And the second source gas may be, for example, PH 3 、SiH 4 、NH 3 、GeH 4 、B 2 H 6 Or AsH 3 . In each of these embodiments, the third source gas may beIs a noble gas such as helium, argon, neon, krypton or xenon. This list represents possible substances that can be used. It is understood that other materials are possible.
By combining the first source gas with the second source gas, the deleterious effects of fluorine ions may be reduced. For example, without being limited to any particular theory, the introduction of hydrogen may produce a film or coating on the dielectric window 125. This serves to protect the dielectric window 125, thereby reducing the amount of contaminants contained in the extracted ion beam 180 that originate from the dielectric window 125. In addition, the second source gas may coat the inner surfaces of the plasma chamber wall 107, which may be another source of contaminants. This coating may reduce the interaction between the fluorine ions and the inner surface of the plasma chamber wall 107, thereby reducing the amount of contaminants generated.
The introduction of the second source gas may reduce the generation of contaminants and the incorporation of such contaminants into the ion beam 180. However, in some embodiments, the resulting ion beam generated using the first source gas and the second source gas may not contain a sufficient amount of desired ions.
FIG. 2A shows a plurality of bar graphs showing the change in the amount of argon used as the third source gas in the present embodiment by using BF 3 As the first source gas and using GeH 4 As ion species generated by an ion source of the second source gas. In each of these bar graphs, the radio frequency power was 8kW, and BF 3 And GeH 4 The combined flow rate of (2) was 18sccm. In addition, BF 3 For GeH 4 The ratio of (A) to (B) was kept constant at 9: 1.
In each of the bar graphs, it can be seen that the ion source 100 is paired with BF 3 Is ionized to form boron ions (i.e., B) + ) And BF x + Ions of which BF x Including BF, BF 2 And BF 3 . In addition, fluoride ions are generated. Finally, a variety of other ionic species, which may be components of the second source gas or may be impurities, are also generated.
As described above, the introduction of the second source gas may reduce the amount of contaminants introduced in the ion beam. As stated above, this is significant when using an ion beam to implant a workpiece without mass analysis.
The bar chart 250 shows the composition of the ion beam without introducing argon, which is also referred to as the baseline. As seen in line 200, in this configuration, almost 69% of the ions in the ion beam are dopant-containing ions, where the dopant is boron in this example. This metric is referred to as the boron fraction or dopant fraction. However, many dopant-containing ions also contain fluorides, e.g. BF + 、BF 2 + And BF 3 + In the form of (1). In fact, as shown in line 210, only about 45% of the dopant-containing ions are pure dopant (i.e., B) + ). This ratio is referred to as the boron purity percentage or dopant purity percentage. In other embodiments, this ratio may be referred to as a process species purity percentage. Finally, although 69% of the ion beam contains boron, a very large percentage of the ions also contain fluorine. In fact, line 220 shows the ratio of fluorine ions to dopant ions extracted as part of ion beam 180. The fluoride ion used in this ratio is a measure of all fluoride ions extracted. In other words, this contains pure fluoride (F) x + ) And comprising, for example, BF x + And the like. Each fluoride ion is counted separately; thus, for example, BF 2 + Is counted as two fluoride ions. The number of dopant ions is calculated in the same manner. Line 220 shows that there are actually more fluorine ions present than boron ions. This metric is called the F/B ratio.
The bar graph 260 shows the composition of the ion beam with approximately 19% of the total gas introduced into the ion chamber being the third source gas, which in this embodiment may be argon. It should be noted that the dopant-containing ion (i.e., B) + And BF x + ) The total beam current of (a) remains almost constant at about 360mA. However, there is variation in the composition of the ion beam. Specifically, as seen on line 200, the boron fraction has been slightly reduced primarily due to the additional argon ions that have been generated. However, surprisingly, as shown in line 210, pure as compared to the total number of dopant-containing ionsThe percentage of dopant ions (boron purity percentage or dopant purity percentage) has actually increased! In fact, the beam current of pure boron ions has also increased. Furthermore, as shown in line 220, the ratio of fluorine ions to boron ions (i.e., the F/B ratio) extracted as part of the ion beam has also been unexpectedly reduced to about 100%. In addition, the beam current of fluoride ions has also decreased. In other words, the introduction of argon as a third source gas has an effect on the composition of the resulting ion beam. In particular, the introduction of argon has caused the formation of pure boron ions to increase relative to the total number of boron-containing ions. Interestingly, the introduction of argon also reduced the ratio of fluorine ions to boron ions. As stated above, these variations may improve the performance of the implanted workpiece in embodiments that do not perform mass analysis.
Many of these trends continue with the introduction of greater percentages of argon. The bar graph 270 shows the composition of the ion beam with about 32% of all gases introduced into the chamber 105 containing argon. At this concentration, the beam current of the boron-containing ions began to decrease slightly, from 360mA to about 320mA. The boron fraction has also decreased slightly due to the increased number of argon ions. However, other metrics have improved. Specifically, the boron purity percentage actually increased to almost 50%. Furthermore, the F/B ratio was reduced to about 95%. Interestingly, the amount of other species containing all ions other than boron, fluorine, or argon ions actually decreases at this argon percentage. The beam current of the fluorine ions is also reduced to less than about 20mA.
The bar graph 280 shows the composition of the ion beam with about 48% of all gases introduced into the chamber 105 containing argon. At this concentration, the beam current of boron-containing ions was again slightly reduced, from 320mA to about 290mA. The boron fraction has also been slightly reduced to about 60% due to the increased number of argon ions. However, other metrics have continued to improve. Specifically, the boron purity percentage actually increased to about 50%. Furthermore, the F/B ratio was reduced to about 90%. In addition, the beam current of other substances has also decreased. The beam current of fluorine ions was also reduced to about 10mA.
Surprisingly, introducing argon at very large percentages, e.g., up to about 50%, still results in improved ion beam metrics. FIG. 2B shows many of these metrics represented in different formats. Specifically, the total beam current containing boron ions is shown in line 290. It should be noted that the total boron-containing beam current remains above about 290mA even when the amount of argon is increased to about 47% of the total gas introduced into the chamber 105. However, when the amount of argon exceeds about 20%, the total boron-containing beam current is reduced. Interestingly, the beam current of pure boron-containing ions increased as the amount of argon introduced into the chamber 105 increased to about 20%, as shown in line 291. However, at a greater percentage of argon, the beam current of pure boron-containing ions is slightly reduced. In fact, the pure boron beam current is about 160mA without argon and increases to about 172mA when about 20% of the total gas is argon. The pure boron beam current then decreases to about 145mA as the percentage of argon continues to increase. The F/B ratio is shown as line 292, which line 292 is identical to line 220 in fig. 2A. As noted above, the F/B ratio decreases as the amount of argon increases throughout the range. Similarly, the boron fraction is shown as line 293, which line 293 is identical to line 200 in fig. 2A. Finally, the boron purity score is shown in line 294 and is the same as line 210 in FIG. 2A. Figure 2B shows that as the percentage of argon introduced into the chamber 105 increases, the total beam current of boron-containing ions (line 290) decreases when the percentage of argon exceeds about 20%. The beam current of pure boron (line 291) also decreases when the percentage of argon exceeds about 20%. However, the boron purity fraction (line 294) increased throughout this entire range. In addition, the ratio of fluorine ions to boron ions (the F/B ratio as shown by line 292) decreases throughout this range. Finally, although the boron fraction steadily decreases (line 293), the percentage of ions containing boron remains above about 60% throughout the entire range.
Other noble gases may also be used. For example, instead of using argon, neon may be used as the third source gas.
FIGS. 4A to 4B show a plurality of bar graphs illustrating BF usage by neon when the amount of neon is varied 3 As the first source gas and using GeH 4 As a second source gasThe ion source of the volume generates an ion species in which neon is used as the third source gas in this embodiment. Like argon, neon is introduced as a third source gas with positive beneficial effects on ion beam composition and other metrics. However, surprisingly, the amount of neon can be introduced and it achieves these benefits much more than argon. In fact, as will be shown in more detail below, even when more than 80% of the total gas introduced into the chamber 105 is neon, a positive beneficial effect!
In each of these bar graphs, the radio frequency power was 8kW, and BF 3 And GeH 4 The combined flow rate of (2) was 18sccm. In addition, BF 3 For GeH 4 The ratio of (A) was kept constant at 9: 1.
As described above, in each of the bar graphs, it can be seen that the ion source 100 is paired with BF 3 Is ionized to form boron ions (i.e., B) + ) And BF X + Ions of which BF x Including BF, BF 2 And BF 3 . In addition, fluoride ions are generated. Finally, a variety of other ionic species are also generated, which may be components of the second source gas or may be impurities.
The bar graph 450 shows the composition of the ion beam without neon introduction, which is also referred to as the baseline. As seen in line 400, in this configuration, almost 75% of the ions in the ion beam are dopant-containing ions, where the dopant is boron in this example. As mentioned above, this metric is referred to as the boron fraction or dopant fraction. However, many dopant-containing ions also contain fluorides, e.g. BF + 、BF 2 + And BF 3 + In the form of (1). In fact, as shown in line 410, only about 41% of the dopant-containing ions are pure dopant (i.e., B) + ). This ratio is referred to as the boron purity fraction or the dopant purity fraction. In other embodiments, this ratio may be referred to as a process species purity percentage. Finally, although 75% of the ion beam contains boron, a very large percentage of the ions also contain fluorine. In fact, line 420 shows the ratio of fluorine ions to dopant ions extracted as part of ion beam 180. At this ratioThe fluoride ion used is a measure of all fluoride ions extracted. In other words, this contains pure fluoride (F) x + ) And comprising, for example, BF x + And the like. Counting each fluorine ion individually; thus, for example, BF 2 + Two fluoride ions were counted. The number of dopant ions is counted in the same manner. Line 420 shows that there are actually more fluorine ions than boron ions. This metric is called the F/B ratio.
Bar graph 455 illustrates the composition of the ion beam in the case where approximately 37.8% of the total gas introduced into the ion chamber is the third source gas, which in this embodiment may be neon. Although fig. 4A shows data using at least 37.8% of the total gas as the third source gas, it should be noted that a positive beneficial effect was observed where the percentage of neon was as low as 20%. Note that the dopant-containing ions (i.e., B) + And BF x + ) Has increased from about 420mA when neon is not used to about 440mA. In addition, there is variation in the composition of the ion beam. Specifically, as seen on line 400, the boron fraction has been slightly reduced primarily due to the additional neon ions that have been generated. However, unexpectedly, as shown in line 410, the percentage of pure dopant ions (boron purity percentage or dopant purity percentage) has actually increased compared to the total number of dopant-containing ions! In fact, the beam current of pure boron ions has also increased. Furthermore, as shown in line 420, the ratio of fluoride ions to boron ions (i.e., the F/B ratio) has also been unexpectedly reduced to about 105%. In addition, the beam current of fluoride ions has also decreased. In other words, neon is introduced as a third source gas, affecting the composition of the resulting ion beam extracted from the plasma. Specifically, the introduction of neon has increased the formation of pure boron ions relative to the total number of boron-containing ions. Interestingly, the introduction of neon also reduced the ratio of fluorine ions to boron ions. As stated above, these variations may improve the performance of the implanted workpiece in embodiments that do not perform mass analysis.
Each of these trends continues with a greater percentage of neon being introduced. The bar graph 460 shows the composition of the ion beam with approximately 54.9% of all gases introduced into the chamber 105 containing neon. At this concentration, the beam current of the boron-containing ions began to decrease slightly, from 440mA to about 430mA. However, the beam current of boron-containing ions is still greater than the baseline. The boron fraction shown as line 400 has also decreased slightly due to the increased number of neon ions. However, other metrics have improved. Specifically, the boron purity fraction shown in line 410 actually increases to nearly 50%. Further, the F/B ratio shown in line 420 is reduced to about 100%. Interestingly, at this neon percentage, the amount of other species containing not all ions that are boron-containing ions, fluorine ions, or neon ions actually decreases. The beam current of the fluorine ions is also reduced to less than about 40mA.
The bar chart 465 shows the composition of the ion beam with approximately 64.6% of all gases introduced into the chamber 105 containing neon. At this concentration, the beam current of the boron-containing ions was again slightly reduced, from 430mA to about 420mA. However, the beam current of the boron-containing ions is still greater than the beam current in the baseline. The boron fraction shown in line 400 has also decreased slightly to about 70% due to the increased number of neon ions. However, other metrics have improved. Specifically, the boron purity fraction shown in line 410 actually increases to about 48%. Further, the F/B ratio shown in line 420 is reduced to less than 100%. In addition, the beam current of other substances has also decreased. The beam current of the fluorine ions was also kept relatively constant at about 20mA.
The bar graph 470 shows the composition of the ion beam with approximately 70.9% of all gases introduced into the chamber 105 containing neon. At this concentration, the beam current of the boron-containing ions remained relatively constant at about 420mA. However, the beam current of the boron-containing ions remains greater than in the baseline. The boron fraction has also decreased slightly to about 70% due to the increased number of neon ions. However, other metrics have improved. Specifically, the percentage of boron purity shown in line 410 actually increases to over 50%. Further, the F/B ratio shown in line 420 is reduced to about 95%. In addition, the beam current of other substances has also decreased. The beam current of the fluorine ions was also kept relatively constant at about 20mA.
The bar graph 475 shows the composition of the ion beam in the case where about 75.3% of all gases introduced into the chamber 105 contain neon. At this concentration, the beam current of the boron-containing ions remained relatively constant at about 420mA. The boron fraction shown in line 400 has also decreased slightly to slightly below 70% due to the increased number of neon ions. However, other metrics have improved. Specifically, the boron purity fraction shown in line 410 actually increases to about 52%. Further, the F/B ratio shown in line 420 is reduced to about 90%. In addition, the beam current of other substances has also decreased. The beam current of fluorine ions was also slightly reduced to about 15mA.
The bar graph 480 shows the composition of the ion beam with about 83.0% of all gases introduced into the chamber 105 containing neon. At this concentration, the beam current of the boron-containing ions was slightly reduced to about 410mA. The boron fraction shown in line 400 has also decreased slightly to about 68% due to the increased number of neon ions. However, other metrics have improved. Specifically, the boron purity fraction shown in line 410 actually increases to about 56%. Further, the F/B ratio shown in line 420 is reduced to about 80%. In addition, the beam current of other substances has also decreased. The beam current of fluorine ions was also slightly reduced to about 15mA. Surprisingly, the neon ion beam current remains less than about 40mA even when 83% of the total gas is neon. This may be due to the high ionization energy of neon.
Surprisingly, introducing neon at a very large percentage, e.g., between 20% and 90%, still results in improved ion beam metrics. This is in contrast to argon, where the introduction of argon improves beam metrics up to a certain percentage and then reduces these metrics. Indeed, amounts of neon as high as 83% or above 83% are unexpected results. FIG. 4B shows many of these metrics represented in different formats. Specifically, the total beam current of boron-containing ions is shown in line 490. It should be noted that the total boron-containing beam current remains above 400mA even when the amount of neon is increased to about 83% of the total gas introduced into the chamber 105. Interestingly, the beam current of pure boron-containing ions shown in line 491 increased with increasing amounts of neon introduced into the chamber 105. In fact, the pure boron beam current was about 175mA at baseline when neon was not used, and increased to about 230mA when 83% of the total gas was neon. More specifically, pure boron beam current increased by greater than 10% relative to the baseline when 37.8% neon was introduced. At baseline, the pure boron beam current was about 175mA. This increased to about 195mA when 37.8% neon was introduced. This trend continues with increasing amounts of neon. For example, with 64.6% neon introduced, the pure boron beam current increased by 15% relative to baseline. When the amount of neon increases, the increase is 20% or more than 20%. The F/B ratio is shown as line 492, which is identical to line 420 in fig. 4A. As described above, the F/B ratio decreases as the amount of neon increases throughout the range. Specifically, the F/B ratio was 112.6% at the baseline when neon was not used. The F/B ratio decreases by more than 6% to 105.7% with the introduction of 37.8% neon. As the amount of neon increases, the F/B ratio continues to decrease. For example, at 54.9% neon, the F/B ratio decreased by almost 10% compared to baseline. At 75.3% neon, the F/B ratio decreased by greater than 20% from baseline. Similarly, the boron fraction is shown as line 493, which line 493 is identical to line 400 in FIG. 4A. Finally, the boron purity score is shown in line 494 and is the same as line 410 in fig. 4A. This boron purity fraction, which represents the ratio of pure process species ions to total process species ions, increased by greater than 6% when 37.8% neon was introduced, as compared to baseline. At 54.9% neon, the boron purity fraction increased by almost 10% relative to baseline. In fact, at high levels of neon dilution, the boron purity fraction increased by more than 20% relative to baseline! In addition, the percentage of pure dopant ions or pure process species ions to total ions, referred to as the pure dopant ratio, also increases as neon is introduced in greater quantities. This pure dopant ratio is shown in line 495. For example, at the baseline, about 31% of all ions are pure dopant ions. However, at 37.8% neon, the pure dopant ratio increases by about 4% to 32.2%. At higher neon levels, the percentage of pure dopant ions may increase by 10% or more than 10% relative to baseline. Fig. 4B shows that as the percentage of neon introduced into the chamber 105 increases, the total beam current (line 490) of boron-containing ions remains approximately constant. However, metrics such as beam current for pure boron (line 491), boron purity fraction (line 494), and pure dopant ratio (line 495) improve throughout this entire range. Further, the ratio of fluorine ions to boron ions (F/B ratio as shown by line 492) decreases throughout this range, with a substantial decrease when the percentage of neon exceeds about 60%. Finally, although the boron fraction steadily decreases (line 493), the percentage of boron-containing ions remains above 70% throughout the entire range.
The unexpected results shown in fig. 2A-2B and fig. 4A-4B have a number of beneficial effects.
First, e.g. BF + 、BF 2 + And BF 3 + Of a heavier dopant-containing ion ratio such as B + Tends to be implanted to a shallower depth. These shallow implanted ions are more likely to diffuse out of the workpiece during subsequent thermal processing. In other words, the total beam current of all dopant-containing ions may not be indicative of the amount of dopant actually implanted and retained in the workpiece. Without wishing to be bound by any particular theory, it is believed that the metastable states of argon and neon in the plasma may decompose a greater amount of dopant-containing ions into more pure dopant ions as desired.
Second, implanting fluorine in any form can have deleterious effects. Implantation of fluoride ions can cause defects in the workpiece, thereby affecting its performance. Implanted fluorine may also cause out-diffusion of dopants from the workpiece. Fluorine is also known to impede dopant diffusion into the workpiece, making the annealed dopant profile shallow, which is not good for solar cell applications.
Third, the introduction of argon and/or neon has a limiting effect on the production of other species, also referred to as contaminants, that are produced. Without wishing to be bound by any particular theory, it is believed that these gases stabilize the plasma, resulting in reduced sputtering of the chamber walls. Argon and neon ionize and stabilize the discharge relatively easily due to their large ionization cross-sections. Thus, the plasma is maintained at a relatively low plasma potential so that ion sputtering from the wall material can be reduced.
Fourth, during implantation into a workpiece, argon and/or neon ions may be sputtered onto the surface-deposited layer of the workpiece. This may be used to remove any material deposited during the implantation process. Some of these materials may be difficult to remove via wet chemical processes after implantation.
Fifth, in the case of neon, high ionization energy implies that few neon ions are generated. Furthermore, these ions have a relatively low mass and therefore cause minimal damage to the workpiece. Thus, neon may be used to improve beam composition with little adverse effect.
Accordingly, an ion beam with reduced beam impurities and increased dopant purity can be generated by using three source gases. The first source gas or feed gas may be a species containing both a dopant and fluorine, such as BF 3 Or B 2 F 4 . The second source gas may be a substance containing hydrogen and either silicon or germanium, such as Silane (SiH) 4 ) Or germane (GeH) 4 ). The third source gas may be argon, neon, or another noble gas. The three source gases are introduced into the chamber 105 of the ion source 100 either simultaneously or sequentially, and the three source gases are ionized in the chamber 105. The ion source may use rf energy generated by an rf antenna 120. In another embodiment, the ion source may use an indirectly heated cathode to take advantage of the thermionic emission of electrons. Other methods of ionizing a gas may also be used with the ion source. When ions from the three source gases are implanted into workpiece 160, the ions from the three source gases are directed toward workpiece 160. As previously described, these ions may not be mass analyzed, meaning that all of the extracted ions are implanted into the workpiece 160.
In another example, the second source gas may comprise a dopant having an opposite conductivity. For example, the first source gas or feed gas may be a material containing both boron and fluorine,such as BF 3 Or B 2 F 4 . The second source gas may be a substance containing hydrogen and a group V element, such as phosphorus, nitrogen, or arsenic.
Although fig. 2A to 2B and fig. 4A to 4B show the results when boron is used as a dopant in the first source gas, the present invention is not limited to this embodiment. Other dopants, such as gallium, phosphorus, arsenic or other group 3 and group 5 elements, may be used.
The above disclosure discusses that the third source gas may be introduced in an amount between about 19% and about 48% when the third source gas is argon and between about 20% and 90% when the third source gas is neon. However, the invention is not limited in this context. In certain embodiments, the third source gas may be introduced in an amount between about 15% and about 90%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount between about 15% and about 40%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount between about 15% and about 50%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount between about 20% and about 90%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount between about 25% and 60%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount greater than 40%, for example, between 40% and 90%. Further, the ratio of the first source gas to the second source gas may be about 9: 1, although other ratios may be used. The combined flow rate of the first source gas and the second source gas may be between 10sccm and 20 sccm.
Although the above description discloses the use of three source gases, in other embodiments, two source gases may be used. For example, in certain embodiments, as described above, the first source gas may be DF n Or D m F n Wherein D represents a dopant (or processing species) atom that may be boron, gallium, phosphorus, arsenic or another group 3 or group 5 element. In certain embodiments, the second source gas is not used. Instead, only the first source gas is combined with the third source gas in the ion source 100. In the bookIn one embodiment, the flow rate of the first source gas may be between 10sccm and 30 sccm. In one embodiment where the third source gas is argon, the third source gas may comprise between 15% and 40% of the total gas introduced into the chamber 105. In certain embodiments where the third source gas is argon, the third source gas may be introduced in an amount between about 15% and about 30%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount between about 15% and about 40%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount between about 15% and about 50%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount between about 20% and about 90%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount between about 25% and 60%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount greater than 40%, for example, between 40% and 90%.
As described above, a third source gas such as argon or neon and BF x The introduction of the gas can have an effect on the composition of the resulting ion beam. Specifically, the percent boron purity may be increased and the F/B ratio may be decreased. In other words, the change in the composition of the ion beam may occur without using the second source gas.
Fig. 3 shows another embodiment. In the present embodiment, the ion source 300 has a chamber separator 390 disposed within the chamber to effectively separate the chamber into a first sub-chamber 305a and a second sub-chamber 305b. Each of first sub-chamber 305a and second sub-chamber 305b has a respective aperture 340a, 340b. Further, the ground electrode 350 and the extraction-suppressing electrode 330 may be modified to have two openings corresponding to the holes 340a, 340b. As before, the chamber has a dielectric window 125 and an RF antenna 120 disposed on the dielectric window 125. In the present embodiment, a first source gas is stored in first source gas container 170 and introduced into second sub-chamber 305b via gas inlet 110. The first source gas may be any of the species described above. A second source gas is stored in second source gas container 171 and introduced into second sub-chamber 305b through second gas inlet 111. The second source gas may be any of the species described above. As described with respect to fig. 1B, in some embodiments, the first source gas container 170 and the second source gas container 171 may be connected to a single gas inlet. In another embodiment, as shown in FIG. 1C, the first source gas and the second source gas may be mixed in a single source gas container. Further, in certain embodiments, as described above, the second source gas is not used. As described above, the ratio of the first source gas to the second source gas may be about 9: 1, although other ratios may be used. The combined flow rate of the first source gas and the second source gas may be between 10sccm and 20 sccm. Argon may be stored in the third source gas container 172 and introduced into the first sub-chamber 305a via the third gas inlet 112.
In the present embodiment, the argon ion beam 380a is extracted through the aperture 340 a. Concurrently, the dopant ion beam 380b is extracted through the aperture 340b. The dopant ion beam 380b includes boron-containing ions and fluorine ions as well as other ion species.
In fig. 3, the argon ion beam 380a and the dopant ion beam 380b are parallel to each other such that they impact the workpiece 160 at different locations. In this embodiment, the workpiece is scanned in the direction indicated by arrow 370. In this manner, each location on the workpiece 160 is first implanted by the dopant ion beam 380b and then struck by the argon ion beam 380a. As described above, the argon ion beam 380a may be used to sputter deposition layer material deposited during implantation of the dopant ion beam 380b from the surface of the workpiece 160.
As explained above, argon implantation may remove materials from surface deposited layers that are difficult to remove using wet chemistry.
In another embodiment, the argon ion beam 380a and the dopant ion beam 380b are directed or focused such that they simultaneously strike locations on the workpiece 160. In this embodiment, the workpiece 160 can be scanned in any direction.
In yet another embodiment, the two implants may be performed sequentially to implant the entire workpiece 160 with the dopant ion beam 380b. At a subsequent time, the argon ion beam 380a is directed toward the workpiece 160.
In each of the embodiments described herein and associated with fig. 3, implantation may be performed without mass analysis so that all of the extracted ions strike the workpiece.
Although argon is used to illustrate the embodiment shown in fig. 3, it is possible that other gases such as neon may be substituted for argon to achieve the same effect.
Furthermore, although the embodiments disclosed herein illustrate the use of argon and neon as the third source gas, the present invention is not limited to this embodiment. As stated above, other rare gases such as helium, krypton, and xenon may also be used as the third source gas. Alternatively, a combination of noble gases may be used as the third source gas.
Further, embodiments disclosed herein illustrate implantation processes for implanting process species, such as dopants, into the workpiece 160. However, the present invention is not limited to this embodiment. For example, other processes may be performed on a workpiece using combinations of source gases described herein. For example, a deposition or etching process may also be performed on a workpiece using a combination of the disclosed source gases.
The scope of the invention is not limited by the specific embodiments described herein. Indeed, other various embodiments of and modifications to the present invention, in addition to those described herein, will be apparent to those of ordinary skill in the art from the foregoing description and accompanying drawings. Accordingly, such other embodiments and finishes are intended to fall within the scope of the invention. Moreover, although the invention has been described herein in the context of a particular implementation in a particular environment for a particular purpose, those of ordinary skill in the art will recognize that its usefulness is not limited thereto and that the invention can be beneficially implemented in any number of environments for any number of purposes. Accordingly, the claims set forth below should be construed in view of the full breadth and spirit of the present disclosure as described herein.

Claims (12)

1. A method of implanting a process substance into a workpiece, comprising:
energizing a first source gas comprising a process species and fluorine, a second source gas comprising silane or germane, and neon in a chamber to form a plasma in the chamber; and
extracting ions from the plasma and implanting the ions into the workpiece, wherein the amount of pure process species ions extracted from the plasma and implanted into the workpiece is increased by 5% to 20% of the total process species-containing ions by selecting the amount of neon introduced into the chamber by volume as compared to a baseline when neon is not used.
2. The method of claim 1, wherein the ions are directed toward the workpiece and are not mass analyzed.
3. The method of claim 1 wherein said number of pure process species ions extracted from said plasma and implanted into said workpiece is increased by 10% to 20% of the percentage of all process species-containing ions as compared to said baseline.
4. The method of claim 1 wherein the ratio of the amount of fluorine ions extracted from the plasma and implanted into the workpiece to the amount of pure process species ions is reduced by 6% to 20% compared to the baseline.
5. The method of claim 1 wherein the beam current of the pure process species ions implanted into the workpiece is increased by 10% to 20% compared to the baseline.
6. The method of claim 1, wherein neon constitutes from 20% to 90% of the volume of the total gas introduced into the chamber.
7. Implanting a process substance as in claim 1Method for processing a workpiece, wherein the first source gas comprises BF 3 Or B 2 F 4 。
8. A method of implanting a dopant into a workpiece, comprising:
energizing a first source gas comprising boron and fluorine, a second source gas comprising silane or germane, and neon in a chamber to form a plasma in the chamber; and
accelerating ions from the plasma toward and implanting the ions into the workpiece, without using mass analysis,
wherein between 20% and 90% of a total volume of gas introduced into the chamber comprises neon, and wherein an amount of neon increases a beam current of pure boron-containing ions implanted into the workpiece by 5% to 20% compared to a baseline when neon is not used.
9. The method of claim 8, wherein between 25% and 50% of the total volume of said introduced gas comprises neon.
10. An apparatus for processing a workpiece, comprising:
an ion source having a chamber defined by a chamber wall, wherein the ion source generates a plasma in the chamber;
a first source gas container containing boron and fluorine in communication with the chamber;
a second source gas container containing silane or germane in communication with the chamber;
a third source gas container containing neon in communication with the chamber; and
a workpiece support to hold the workpiece, wherein the apparatus for processing a workpiece introduces a volume of neon into the chamber in an amount sufficient to increase an amount of pure boron-containing ions extracted from the plasma by an amount of 5% to 20% of the total ions containing a processing species as compared to a baseline when neon is not used.
11. The apparatus of claim 10, wherein ions from the plasma are accelerated toward the workpiece and the ions implanted into the workpiece are not mass analyzed.
12. The apparatus for processing a workpiece according to claim 10, wherein 20 to 90% of the total amount of gas introduced into the chamber contains neon.
CN201680084099.5A 2016-04-05 2016-04-05 Method for implanting a processing substance and a dopant into a workpiece and device for implanting a processing substance and a dopant into a workpiece Active CN109075041B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2016/025996 WO2017176255A1 (en) 2016-04-05 2016-04-05 Boron implanting using a co-gas

Publications (2)

Publication Number Publication Date
CN109075041A CN109075041A (en) 2018-12-21
CN109075041B true CN109075041B (en) 2022-12-06

Family

ID=60000595

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680084099.5A Active CN109075041B (en) 2016-04-05 2016-04-05 Method for implanting a processing substance and a dopant into a workpiece and device for implanting a processing substance and a dopant into a workpiece

Country Status (4)

Country Link
JP (1) JP6889181B2 (en)
KR (2) KR20180132800A (en)
CN (1) CN109075041B (en)
WO (1) WO2017176255A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009506580A (en) * 2005-08-30 2009-02-12 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド Large boron hydride formation for boron ion implantation and implantation using alternative boron fluoride precursors
CN101427350A (en) * 2006-01-28 2009-05-06 瓦里安半导体设备公司 Methods of implanting ions and ion sources used for same
WO2011106750A2 (en) * 2010-02-26 2011-09-01 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
CN102232241A (en) * 2008-12-04 2011-11-02 瓦里安半导体设备公司 Excited gas injection for ion implant control
WO2015080843A1 (en) * 2013-07-18 2015-06-04 Varian Semiconductor Equipment Associates, Inc. Method for implant productivity enhancement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
KR20180104171A (en) * 2010-09-15 2018-09-19 프랙스에어 테크놀로지, 인코포레이티드 Method for extending lifetime of an ion source
US8803112B2 (en) 2012-08-28 2014-08-12 Praxair Technology, Inc. Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
TWI541868B (en) * 2013-04-04 2016-07-11 東京威力科創股份有限公司 Pulsed gas plasma doping method and apparatus
US9677171B2 (en) 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
US9887067B2 (en) * 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009506580A (en) * 2005-08-30 2009-02-12 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド Large boron hydride formation for boron ion implantation and implantation using alternative boron fluoride precursors
CN101427350A (en) * 2006-01-28 2009-05-06 瓦里安半导体设备公司 Methods of implanting ions and ion sources used for same
CN102232241A (en) * 2008-12-04 2011-11-02 瓦里安半导体设备公司 Excited gas injection for ion implant control
WO2011106750A2 (en) * 2010-02-26 2011-09-01 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
WO2015080843A1 (en) * 2013-07-18 2015-06-04 Varian Semiconductor Equipment Associates, Inc. Method for implant productivity enhancement

Also Published As

Publication number Publication date
KR20200126015A (en) 2020-11-05
JP2019518325A (en) 2019-06-27
JP6889181B2 (en) 2021-06-18
CN109075041A (en) 2018-12-21
KR20180132800A (en) 2018-12-12
WO2017176255A1 (en) 2017-10-12
KR102219501B1 (en) 2021-02-25

Similar Documents

Publication Publication Date Title
US10446371B2 (en) Boron implanting using a co-gas
US9064795B2 (en) Technique for processing a substrate
US9840772B2 (en) Method of improving ion beam quality in a non-mass-analyzed ion implantation system
US10825653B2 (en) Method of improving ion beam quality in an implant system
TWI602239B (en) Method for generating ion beam having gallium ion
US9034743B2 (en) Method for implant productivity enhancement
CN109075041B (en) Method for implanting a processing substance and a dopant into a workpiece and device for implanting a processing substance and a dopant into a workpiece
TWI707378B (en) Method of implanting processing species into workpiece and implanting dopant into workpiece, and apparatus for processing workpiece
TWI642091B (en) Method of processing workpiece

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant