CN109065689A - A kind of Micro LED encapsulation structure and preparation method thereof - Google Patents
A kind of Micro LED encapsulation structure and preparation method thereof Download PDFInfo
- Publication number
- CN109065689A CN109065689A CN201810788191.0A CN201810788191A CN109065689A CN 109065689 A CN109065689 A CN 109065689A CN 201810788191 A CN201810788191 A CN 201810788191A CN 109065689 A CN109065689 A CN 109065689A
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- micro led
- led encapsulation
- emitting diode
- encapsulation structure
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims abstract description 45
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000006071 cream Substances 0.000 claims abstract description 14
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 6
- 238000000926 separation method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 403 Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of Micro LED encapsulation structure, including CMOS structure, for connecting the tin cream of the CMOS structure and the light emitting diode, and the transparent protective layer of the light emitting diode upper surface is arranged in light emitting diode；The light emitting diode includes the pole P, is arranged at intervals on the pole N below the pole P, and the Quantum Well being arranged between the pole P lower surface and the pole N upper surface；The gap formed between the pole N and the pole P is equipped with one layer for improving the megohmite insulant of the light-emitting diode luminous efficiency.Micro LED of the invention is the structure that total P divides N, and elder generation Bonding existing for total N type junction structure is not only effectively avoided to etch the brought influence to CMOS structure again；And it efficiently solves separation LED chip and carries out precision problem brought by flood tide transfer and release problem；And Micro LED encapsulation structure of the invention can effectively improve light efficiency, electric conductivity and the translucency of microns x chip.
Description
Technical field
The invention belongs to technical field of semiconductor illumination.More particularly, to a kind of Micro LED encapsulation structure and its system
Preparation Method.
Background technique
Micro LED technology, i.e. LED miniatureization and matrixing technology；Refer to the high density integrated on a single die
The LED size of microsize, as LED display each pixel can addressing, be operated alone and light, by pixel class by grade
It is reduced to micron order.Micro LED not only inherits traditional LED high efficiency, high brightness, high reliability and reaction time fast excellent
Point, but also have the characteristics that energy conservation, mechanism are simple, small in size, slim and luminous without backlight.
Micro LED typical structure is with PN junction rectifier, and the PN junction rectifier is by direct gap semiconductor
It constitutes.At this stage, for the processing procedure of Micro LED, three big types are mainly rendered as；The first welds (Chip for chip-scale
Bonding), LED is directly carried out to the Micro LED for being cut into micron grade, using SMT technology or COB technology, by micron etc.
Micro LED chip mono- one of grade is connected on display base plate；Second is extension grade welding (Wafer bonding),
Inductive couple plasma ion(ic) etching (ICP) is used in the epitaxy film layer of LED, directly forms the Micro LED of nano-scale
Polycrystalline structure film is pumped, the constant spacing of this structure is to show to draw the required spacing of element, then LED wafer is directly bonded in driving
On circuit substrate, substrate finally is removed using physically or chemically mechanism；The third shifts (Thin film for film
Transfer), LED substrate is removed using physically or chemically mechanism, polycrystalline thin film layer is pumped with temporary substrate carrying LED, recycles ICP
The Micro LED for forming micron grade pumps polycrystalline structure film, finally, batch transfer is carried out using specific transfer tool,
It is bonded in drive circuit substrate and forms display stroke element.
Summary of the invention
In order to solve the above technical problems, the first purpose of this invention is to provide a kind of Micro LED encapsulation structure.Institute
Stating Micro LED encapsulation structure is the structure that a kind of total P divides N, has excellent light efficiency, electric conductivity and translucency.
Second object of the present invention is to provide a kind of preparation method of Micro LED encapsulation structure.
In order to achieve the above objectives, the invention adopts the following technical scheme:
A kind of Micro LED encapsulation structure, including CMOS structure, light emitting diode, for connect the CMOS structure and
The tin cream of the light emitting diode, and the transparent protective layer of the light emitting diode upper surface is set；
The light emitting diode includes the pole P, is arranged at intervals on the pole N below the pole P, and setting the P extremely under
Quantum Well between surface and the pole N upper surface；The gap formed between the pole N and the pole P is described for improving equipped with one layer
The megohmite insulant of light-emitting diode luminous efficiency.
Preferably, the transparent protective layer is arranged in the upper surface of the pole P and for protecting the pole P not by external rings
The influence in border is to improve its service life.
Preferably, pass through tin with the CMOS structure after the pole the N lower surface progress metalized of the light emitting diode
Cream connection.
Preferably, the CMOS structure, including substrate are arranged insulating layer on the substrate, and are arranged at intervals on
Metal layer on the insulating layer.
Preferably, the upper surface of the metal layer is connected with the pole the N lower surface after metalized just by tin cream.
Preferably, the substrate is GaN/Si substrate.
Preferably, the metal layer includes but is not limited to Au layers or Ag layers.
Preferably, the transparent protective layer includes but is not limited to ITO or FTO.
Preferably, the pole P keeps being electrically connected, and N is extremely electrically mutually indepedent.
A kind of preparation method of Micro LED encapsulation structure, includes the following steps:
1) the continuous pole N, Quantum Well and the pole P are set gradually from top to bottom in the GaN/Si substrate, forms pump crystal layer；
Then interim transfer base substrate lower surface is fixed in the pole P of the pump crystal layer, to protect to the pole P；
2) the GaN/Si substrate is removed by laser lift-off, and metalized is carried out to the pole the N lower surface of exposing, so
The pole N after metalized is etched afterwards, is etched at the pole P, so that the continuous pole N is divided between having centainly
Every the pole N structure, to form multiple independent LED；
3) one layer of megohmite insulant is filled in the independent LED interval, and the LED with insulating layer is consolidated by tin cream
Be scheduled on the metal layer of the CMOS structure, be finally peeled away the P extremely on interim transfer base substrate, and the pole P upper surface cover
Transparent protective layer；Obtain Micro LED encapsulation structure.
Beneficial effects of the present invention are as follows:
1, the total P of Micro LED of the invention divides the structure of N, and the technology mode of Bonding is first etched again due to using,
Elder generation Bonding existing for total N type junction structure can be effectively avoided to etch the brought influence to CMOS structure again.
2, since Micro LED encapsulation structure size is small, flood tide shifts existing precision problem, using method of the invention
It can be avoided independent micron order chip flood tide and shift existing one single chip alignment issues, while avoiding brought by flood tide transfer
The problems such as single chip position deviation is mobile.
3, Micro LED encapsulation structure of the invention can effectively improve light efficiency, electric conductivity and the translucency of microns x chip.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 shows the schematic diagram of Micro LED encapsulation structure of the present invention.
Fig. 2 shows preparation Micro LED encapsulation structure process schematic representations of the present invention.
Wherein, 1, transparent protective layer, 2, tin cream, 3, megohmite insulant, 4, CMOS structure, 5, light emitting diode, 6, interim turn
Move substrate, 401, GaN/Si substrate, 402, insulating layer, 403, metal layer, 501, the pole N, 502, the pole P, 503, Quantum Well.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.It will be appreciated by those skilled in the art that specifically described content is illustrative and be not restrictive below, it should not be with this
It limits the scope of the invention.
In one embodiment of the invention, as shown in Figure 1, providing a kind of Micro LED encapsulation structure, including CMOS
Structure 4, light emitting diode 5, for connecting the tin cream 2 of CMOS structure 4 and light emitting diode 5, and setting in light emitting diode 5
The transparent protective layer 1 of upper surface.
Light emitting diode 5 includes the pole P 502, the pole N 501 for being arranged at intervals on 502 lower section of the pole P；And it is arranged in 502 He of the pole P
Quantum Well 503 between the pole N 501；CMOS structure 4 includes substrate 401, the insulating layer 402 that is arranged in substrate 401, and
Every the metal layer 403 being arranged on insulating layer 402；The gap formed between the pole N 501 and the pole P 502 is filled with one layer of insulant
Matter 3, which can not only guarantee that 501 chip cutting trailing flank of the pole N is smooth, but also light can be allowed to be limited in N pole piece piece
In, improve the luminous efficiency of light emitting diode 5.
In embodiments of the present invention, 501 lower surface of the pole N of the light emitting diode 5 after metalized with
CMOS structure 4 is connected by tin cream 2；Preferably, 501 lower surface of the pole N after metalized and metal layer 403 is upper
Surface is one-to-one, and area is identical；The upper surface of metal layer 403 and 501 lower surface of the pole N after metalized pass through
Tin cream connection.
In embodiments of the present invention, substrate is GaN/Si substrate 401；Light emitting diode 5 can be improved in metal layer 403
Luminance；Metal layer 403 includes but is not limited to Au layers or Ag layers；The upper surface of the pole P 502 is arranged in transparent protective layer 1, is used for
It protects the pole P 502 not to be affected by, and can be improved the light transmission rate of light emitting diode 5；Transparent protective layer 1 wraps
Include but be not limited to ITO or FTO.
In embodiments of the present invention, the pole P 502 keeps being electrically connected, and it is electrically mutually indepedent to be spaced the setting pole N 501.
In embodiments of the present invention, the megohmite insulant 3 and CMOS of the gap formed between the pole N 501 and the pole P 502
It is identical or different insulating materials that the insulating layer 402 of structure 4, which can use,.
Light emitting diode 5 in Micro LED encapsulation structure of the present invention is arranged at intervals under the pole P 502 due to the pole N 501
Side forms multiple independent LED；Therefore it can be avoided the existing one single chip alignment of independent micron order chip flood tide transfer to ask
Topic, while flood tide being avoided to shift the problems such as brought single chip position deviation is mobile.In addition, Micro LED of the invention
Encapsulating structure can effectively improve the light efficiency, light transmittance and electric conductivity of microns x chip.
As shown in Fig. 2, a kind of preparation method of Micro LED encapsulation structure, includes the following steps:
Step 1: the continuous pole N 501, Quantum Well 503 and the pole P are set gradually from top to bottom in GaN/Si substrate 401
502, form pump crystal layer；Then interim 6 lower surface of transfer base substrate is fixed in the pole P 502 for pumping crystal layer, with to the pole P 502 into
Row protection；
Step 2: GaN/Si substrate 401 is removed by laser lift-off (LLC), and 501 lower surface of the pole N of exposing is carried out
Metalized；
Step 3: being etched the pole N 501 after metalized, until being etched at the pole P 502, so that continuously
The pole N 501 be divided into the pole the N structure with certain intervals together with Quantum Well 503, to form the structure that total P divides N, that is, formed
Multiple independent LED；
Step 4: it is filled with one layer of megohmite insulant 3 in independent LED interval, and the LED with megohmite insulant 3 is led to
Cross 403 upper surface of metal layer that tin cream 2 is fixed on CMOS structure 4；The interim transfer base substrate 6 being finally peeled away on the pole P 502, and in P
502 upper surface of pole covers transparent protective layer 1, obtains Micro LED encapsulation structure.
The total P of Micro LED of the invention divides the structure of N, and the technology mode of Bonding, energy are first etched again due to using
It is enough that elder generation Bonding existing for N type junction structure altogether is effectively avoided in the prior art to etch the brought influence to CMOS structure again.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (10)
1. a kind of Micro LED encapsulation structure, which is characterized in that including CMOS structure, light emitting diode is described for connecting
The tin cream of CMOS structure and the light emitting diode, and the transparent protective layer of the light emitting diode upper surface is set；
The light emitting diode includes the pole P, is arranged at intervals on the pole N below the pole P, and be arranged in the pole P lower surface
Quantum Well between the upper surface of the pole N；The gap formed between the pole N and the pole P is equipped with one layer for improving described shine
The megohmite insulant of LED lighting efficiency.
2. Micro LED encapsulation structure according to claim 1, which is characterized in that the transparent protective layer is arranged in the P
The upper surface of pole and for protecting the pole P not to be affected by to improve its service life.
3. Micro LED encapsulation structure according to claim 1, which is characterized in that the pole the N lower surface of the light emitting diode
It is connect with the CMOS structure by tin cream after carrying out metalized.
4. Micro LED encapsulation structure according to claim 3, which is characterized in that the CMOS structure, including substrate, if
Insulating layer on the substrate is set, and the metal layer being arranged at intervals on the insulating layer.
5. Micro LED encapsulation structure according to claim 4, which is characterized in that the upper surface of the metal layer and metal
Change that treated that the pole N lower surface is connected just by tin cream.
6. Micro LED encapsulation structure according to claim 4, which is characterized in that the substrate is GaN/Si substrate.
7. Micro LED encapsulation structure according to claim 4, which is characterized in that the metal layer includes but is not limited to Au
Layer or Ag layers.
8. Micro LED encapsulation structure according to claim 1, which is characterized in that the transparent protective layer includes but unlimited
In ITO or FTO.
9. Micro LED encapsulation structure according to claim 1, which is characterized in that the pole P keeps being electrically connected, and the pole N
It is electrically mutually indepedent.
10. a kind of preparation method of the Micro LED encapsulation structure as described in claim 1-9 is any, includes the following steps:
1) the continuous pole N, Quantum Well and the pole P are set gradually from top to bottom in the GaN/Si substrate, forms pump crystal layer；Then
Interim transfer base substrate lower surface is fixed in the pole P of the pump crystal layer, to protect to the pole P；
2) the GaN/Si substrate is removed by laser lift-off, and metalized is carried out to the pole the N lower surface of exposing, it is then right
The pole N after metalized is etched, and is etched at the pole P, so that the continuous pole N is divided into certain intervals N
Pole structure, to form multiple independent LED；
3) one layer of megohmite insulant is filled in the independent LED interval, and the LED with insulating layer is fixed on by tin cream
On the metal layer of the CMOS structure, be finally peeled away the P extremely on interim transfer base substrate, and the pole P upper surface cover it is transparent
Protective layer；Obtain Micro LED encapsulation structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810788191.0A CN109065689B (en) | 2018-07-18 | 2018-07-18 | Micro LED packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810788191.0A CN109065689B (en) | 2018-07-18 | 2018-07-18 | Micro LED packaging structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109065689A true CN109065689A (en) | 2018-12-21 |
| CN109065689B CN109065689B (en) | 2023-09-29 |
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| CN201810788191.0A Active CN109065689B (en) | 2018-07-18 | 2018-07-18 | Micro LED packaging structure and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128716A (en) * | 2019-11-15 | 2020-05-08 | 西安电子科技大学 | Heterogeneous integration method for large-area graph self-alignment |
| CN111710689A (en) * | 2020-05-23 | 2020-09-25 | 信阳市谷麦光电子科技有限公司 | Micro LED packaging structure with high color rendering property |
| WO2021088125A1 (en) * | 2019-11-06 | 2021-05-14 | 苏州市奥视微科技有限公司 | Ultra-high-resolution micro-display screen and manufacturing process therefor |
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| CN106206872A (en) * | 2016-08-04 | 2016-12-07 | 南京大学 | GaN base visible ray micron post array LED device that Si CMOS array drive circuit controls and preparation method thereof |
| CN107068665A (en) * | 2017-04-18 | 2017-08-18 | 天津三安光电有限公司 | Micro-led device and preparation method thereof |
| CN208352328U (en) * | 2018-07-18 | 2019-01-08 | 易美芯光（北京）科技有限公司 | A kind of Micro LED encapsulation structure |
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2018
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Patent Citations (4)
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| JP2006196693A (en) * | 2005-01-13 | 2006-07-27 | Sony Corp | Method for forming semiconductor device and method for mounting semiconductor device |
| CN106206872A (en) * | 2016-08-04 | 2016-12-07 | 南京大学 | GaN base visible ray micron post array LED device that Si CMOS array drive circuit controls and preparation method thereof |
| CN107068665A (en) * | 2017-04-18 | 2017-08-18 | 天津三安光电有限公司 | Micro-led device and preparation method thereof |
| CN208352328U (en) * | 2018-07-18 | 2019-01-08 | 易美芯光（北京）科技有限公司 | A kind of Micro LED encapsulation structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021088125A1 (en) * | 2019-11-06 | 2021-05-14 | 苏州市奥视微科技有限公司 | Ultra-high-resolution micro-display screen and manufacturing process therefor |
| CN111128716A (en) * | 2019-11-15 | 2020-05-08 | 西安电子科技大学 | Heterogeneous integration method for large-area graph self-alignment |
| CN111128716B (en) * | 2019-11-15 | 2023-10-17 | 西安电子科技大学 | Heterogeneous integration method for large-area graph self-alignment |
| CN111710689A (en) * | 2020-05-23 | 2020-09-25 | 信阳市谷麦光电子科技有限公司 | Micro LED packaging structure with high color rendering property |
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| CN109065689B (en) | 2023-09-29 |
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