CN108987516B - Grid-shaped double-sided direct-connection solar cell module and preparation method thereof - Google Patents
Grid-shaped double-sided direct-connection solar cell module and preparation method thereof Download PDFInfo
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- 230000001070 adhesive effect Effects 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007781 pre-processing Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 11
- 238000004021 metal welding Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a grid-shaped double-sided direct-connection solar cell module, which comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string, and the solar cells comprise first solar cells; the first solar cell comprises a first front electrode and a first back electrode, wherein the first front electrode and the first back electrode are respectively provided with a transverse fine grid, a longitudinal fine grid and a contact, and the contact is arranged at the end part of the transverse fine grid; the long sides of adjacent solar cells are overlapped to form surface contact; adjacent solar cells are connected through contacts, conductive adhesive is coated on the contacts, and the solar cells are solidified to form a cell string. Correspondingly, the invention also provides a preparation method of the grid-shaped double-sided direct connection solar cell module. The invention has simple structure, reduces the line loss of the welding strip and the gap between the battery pieces, enhances the electron collecting capability of the front electrode and reduces the cost.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a grid-shaped double-sided direct-connection solar cell module and a preparation method thereof.
Background
The traditional crystalline silicon component battery pieces are basically connected by adopting metal welding strips. This connection has three relatively obvious drawbacks: firstly, the gaps between the metal welding strips and the battery pieces occupy the light receiving area of the front surface of the assembly; secondly, the metal welding strip has line loss; and thirdly, the welding strip is easy to break and corrode due to thermal expansion and contraction in a temperature change period, and the three modes have great influence on the conversion efficiency and the performance stability of the assembly.
Disclosure of Invention
The invention aims to solve the technical problems of providing a grid-shaped double-sided direct connection solar cell module, which has a simple structure, reduces the line loss of a welding strip and gaps between cell pieces, enhances the electron collecting capability of a front electrode, reduces the cost, improves the reliability of the cell module and improves the photoelectric conversion efficiency.
The invention also aims to solve the technical problems of providing the preparation method of the grid-shaped double-sided direct connection solar cell module, which reduces the line loss of the welding strip and the gaps between the cell pieces, enhances the electron collecting capability of the front electrode, has simple process flow, lower cost, easy popularization, high reliability of the cell module and high photoelectric conversion efficiency.
In order to solve the technical problems, the invention provides a grid-shaped double-sided direct-connection solar cell module, which comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string, and the solar cells comprise first solar cells;
the first solar cell comprises a first front electrode and a first back electrode, wherein the first front electrode and the first back electrode are respectively provided with a transverse fine grid, a longitudinal fine grid and a contact, the contacts are arranged at the end parts of the transverse fine grids, and the transverse fine grids and the longitudinal fine grids are vertically connected to form a grid shape;
the long sides of adjacent solar cells are overlapped to form surface contact;
adjacent solar cells are connected through contacts, conductive adhesive is coated on the contacts, and the solar cells are solidified to form a cell string.
As a preferable mode of the above scheme, the solar cell is a pretreated whole silicon wafer or a pretreated piece of silicon wafer.
As a preferable mode of the above-described aspect, the processing sequentially includes: forming a suede on the front side and the back side of a whole silicon wafer or a split wafer, forming PN junctions by diffusion, doping, polishing the back side, depositing passivation films on the front side and the back side, grooving the back side, printing a front electrode and a back electrode, sintering, resisting LID annealing and carrying out grading test.
As a preferable mode of the scheme, the front side transverse fine grid and the back side transverse fine grid of the first solar cell are provided with contacts, and the contacts are arranged at the end parts of the front side transverse fine grid;
The contacts of the front transverse fine grid of each solar cell are arranged on the back surface of the front solar cell and are connected with the contacts of the back transverse fine grid of the front solar cell.
As a preferable mode of the above scheme, the contact is a circular contact, a rectangular contact, a regular polygon contact or a linear contact.
As a preferable mode of the above scheme, the solar cell further comprises a second solar cell, the second solar cell comprises a second front electrode and a second back electrode, the second front electrode and the second back electrode are both provided with transverse thin grids, at least one of the second front electrode and the second back electrode is provided with a longitudinal main grid, and the longitudinal main grid is connected with the transverse thin grids.
As a preferable mode of the above-mentioned aspect, the solar cell sheet includes a second solar cell sheet a, a second solar cell sheet B, and a first solar cell sheet;
the front electrode of the second solar cell A comprises a plurality of front transverse thin grids, 1 front longitudinal main grid and a plurality of front longitudinal thin grids, and the back electrode comprises a plurality of back transverse thin grids, contacts arranged at the end parts of the back transverse thin grids and a plurality of back longitudinal thin grids;
the front electrode of the second solar cell B comprises a plurality of front transverse thin grids, contacts arranged at the end parts of the front transverse thin grids and a plurality of front longitudinal thin grids, and the back electrode comprises a plurality of back transverse thin grids, 1 back longitudinal main grid and a plurality of back longitudinal thin grids;
The front electrode of the first solar cell comprises a plurality of front transverse thin grids, contacts arranged at the end parts of the front transverse thin grids and a plurality of front longitudinal thin grids, and the back electrode comprises a plurality of back transverse thin grids, contacts arranged at the end parts of the back transverse thin grids and a plurality of back longitudinal thin grids;
The second solar cell A, the first solar cell and the second solar cell B are sequentially stacked and connected.
As a preferred form of the above, the width of the contact is at least 20% greater than the width of the lateral fine gate.
Correspondingly, the invention also discloses a preparation method of the grid-shaped double-sided direct-connection solar cell module, which comprises the following steps:
(1) Preprocessing a silicon wafer, printing a front electrode and a back electrode on the surface of the silicon wafer, and drying to obtain a solar cell;
(2) Sintering the solar cell at high temperature to solidify the slurry;
(3) Performing LID resistance annealing on the solar cell, and performing grading test;
(4) Printing conductive adhesive on the contact;
(5) Stacking solar cells one by one along the side where the contacts are positioned, and connecting adjacent solar cell contacts to form a cell string;
(6) And heating and curing the battery strings, and packaging the battery strings into a double-sided direct-connection assembly.
As a preferable mode of the above scheme, the pretreatment of the silicon wafer comprises:
(1.1) forming texture surfaces on the front surface and the back surface of the silicon wafer;
(1.2) performing high-square-resistance diffusion on the front surface of the silicon wafer to form a PN junction;
(1.3) carrying out selective laser doping on the front surface of the silicon wafer;
(1.4) removing byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back surface of the silicon wafer;
(1.5) depositing a passivation film and a protective film on the back surface of the silicon wafer;
(1.6) depositing a passivation film and an antireflection film on the front surface of the silicon wafer;
and (1.7) carrying out laser grooving on the passivation film and the protection film on the back surface of the silicon wafer.
The implementation of the invention has the following beneficial effects:
The invention provides a grid-shaped double-sided direct-connection solar cell module, which comprises at least two solar cell pieces, wherein each solar cell piece is a whole piece of processed silicon wafer or a piece of processed silicon wafer, and long sides of adjacent solar cell pieces are overlapped to form surface contact; and adjacent solar cells are connected through the contact, and through coating conductive adhesive on the contact, form the battery string through solidification, have following advantage:
1. the first front electrode and the first back electrode are respectively provided with a transverse fine grid, a longitudinal fine grid and a contact, the transverse fine grids and the longitudinal fine grids are vertically connected to form a grid shape, current is collected according to grid-shaped paths, the total series resistance of the assembly is reduced, and the battery efficiency and the assembly power are improved.
2. Through the optimization design of the grid pattern, the shading area of the front electrode and the consumption of front electrode slurry can be reduced.
3. The distribution of the grid electrodes ensures that the internal stress is more uniform, and the battery is not easy to generate hidden cracks. High current collection capability can still be maintained with small hidden cracks, while reducing the chance of internal hidden cracks forming thermal resistance of the assembly under normal operating conditions.
4. The solar cells in the battery string are directly connected with the anode and the cathode of the adjacent cells through conductive adhesive, so that the consumption of the welding belt is greatly reduced, gaps are not formed among the cells, the usable area of the surface of the assembly is fully utilized, the line loss of the traditional metal welding belt is reduced, and the conversion efficiency of the assembly is greatly improved;
5. the adjacent whole sheets or the separated sheets are connected through the contact and the conductive adhesive, so that the manufacturing flow of the double-sided assembly is greatly simplified, and the equipment cost and the production cost are reduced;
6. The adjacent whole sheets or the separated sheets are connected through the contact and the conductive adhesive, so that the series resistance and the resistance loss in the assembly are reduced, and the power of the double-sided assembly is obviously improved;
7. according to the invention, the conductive adhesive is coated on the contacts between adjacent whole sheets or between the sheets, and the battery strings are formed through curing, so that the process flow is simple, and the cost is reduced;
8. The process flow is simple, each process step is mature, and the process is integrated into the common solar cell manufacturing process, so that the error probability in the manufacturing process is reduced, and the reliability of the product is improved;
9. the traditional metal welding strip connection mode is wire connection, and the assembly is surface connection, so that the connection force between the battery pieces is effectively improved, and the assembly is more reliable.
Drawings
FIG. 1 is a schematic front view of a first solar cell of the present invention;
FIG. 2 is a schematic view of the back structure of a first solar cell of the present invention;
FIG. 3 is a schematic illustration of a first embodiment of a double sided direct connection assembly of the present invention during lamination;
FIG. 4 is a schematic front view of a first embodiment of a double-sided direct connection assembly of the present invention;
FIG. 5 is a schematic view of the back structure of a first embodiment of a double-sided direct connection assembly of the present invention;
FIG. 6 is a cross-sectional view of the double-sided direct-connect assembly shown in FIG. 3;
fig. 7 is a schematic front view of a second solar cell a according to the present invention;
fig. 8 is a schematic view showing the back structure of a second solar cell a according to the present invention;
Fig. 9 is a schematic front view of a second solar cell B according to the present invention;
Fig. 10 is a schematic view showing the back structure of a second solar cell B according to the present invention;
FIG. 11 is a schematic illustration of a second embodiment of a double sided direct connection assembly of the present invention during lamination;
FIG. 12 is a schematic elevational view of a second embodiment of a double-sided direct connection assembly of the present invention;
FIG. 13 is a schematic view of the back structure of a second embodiment of a double-sided direct connection assembly of the present invention;
FIG. 14 is a cross-sectional view of a second embodiment of a double-sided direct connection assembly of the present invention;
Fig. 15 is a flowchart of a method of manufacturing a lattice-shaped double-sided direct solar cell module according to the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
The invention provides a grid-shaped double-sided direct-connected solar cell module which comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string. The solar cell provided by the invention at least comprises a first solar cell.
As shown in fig. 1 and 2, the first solar cell 1A includes a first front electrode and a first back electrode, where the first front electrode and the first back electrode are both provided with a transverse fine grid, a longitudinal fine grid and a contact, and the contact is disposed at an end of the transverse fine grid. The transverse fine grids and the longitudinal fine grids are vertically connected to form a grid shape.
Specifically, the front electrode of the first solar cell 1A includes a plurality of front transverse thin grids 11, contacts 111 disposed at the ends of the front transverse thin grids 11, and a plurality of front longitudinal thin grids 13; the rear electrode includes a plurality of rear lateral fine bars 14, contacts 111 provided at the ends of the rear lateral fine bars 14, and a plurality of rear longitudinal fine bars 16. The front transverse fine grid 11 and the front longitudinal fine grid 13 are vertically connected to form a grid shape, and the back transverse fine grid 14 and the back longitudinal fine grid 16 are vertically connected to form a grid shape.
The front transverse thin grid 11 can be used as a main grid of the front of the solar cell, and the front longitudinal thin grid 13 can be used as an auxiliary grid of the front of the solar cell; the back lateral thin grid 14 can be used as a main grid on the back of the solar cell, and the back longitudinal thin grid 16 can be used as a sub-grid on the back of the solar cell, so that the front electrode and the back electrode of the solar cell are formed.
Preferably, the width of the lateral fine grid is slightly larger than the width of the longitudinal fine grid. More preferably, the width of the lateral fine grid is 10% -30% greater than the width of the longitudinal fine grid.
The transverse fine grids and the longitudinal fine grids are vertically connected to form a grid shape, and the device has the following advantages: 1. the current is collected according to grid-shaped paths, so that the total series resistance of the component is reduced, and the battery efficiency and the component power are improved. 2. Through the optimization design of the grid pattern, the shading area of the front electrode and the consumption of front electrode slurry can be reduced. 3. The distribution of the grid electrodes ensures that the internal stress is more uniform, and the battery is not easy to generate hidden cracks. High current collection capability can still be maintained with small hidden cracks, while reducing the chance of internal hidden cracks forming thermal resistance of the assembly under normal operating conditions.
The grid-shaped direct connection technology of the invention is connected with the conductive adhesive by virtue of the contact, eliminates the welding strip, and can make the transverse fine grid very thin, thereby fully playing the advantages of the grid-shaped electrode. The conventional multi-main-grid battery technology is connected according to the welding strips of the conventional components, the welding strips are welded on the main grid, and the welding strips cannot be made very thin, so that the advantages of the multi-main-grid technology are limited. The multi-main-grid battery studied in the industry is mainly of 12-main-grid technology, and is also connected by adopting a welding strip, the width of the main grid is 0.4mm, and the battery efficiency is improved only to a limited extent. The grid-shaped direct connection technology can further narrow the width of the transverse fine grid, fully exert the advantages of grid-shaped electrodes, greatly improve the battery efficiency and the assembly power, and reduce the cost.
Preferably, the contact 111 is a circular contact, a rectangular contact, a regular polygon contact, or a linear contact. The linear contact may comprise a variety of forms of linear shape, such as straight, curved, arcuate, etc.
It should be noted that, the contact 111 may be configured in other shapes besides the above-mentioned shape, such as a diamond shape, a semicircle shape, or other irregular shapes, and the embodiment thereof is not limited to the embodiment of the present invention.
It should be noted that the fine grating of the present invention may be in the form of straight line, segment, curve, etc., and is not limited thereto. In addition to the main grid and the auxiliary grid, the invention can be provided with spines, and the solar cell module has various embodiments, and the embodiments of the invention are not limited to the examples.
As shown in fig. 3, in the stacking arrangement process, adjacent solar cells 1 are connected through contacts 111, and the contacts 111 of the front transverse fine grid of each solar cell 1 are arranged on the back surface of the previous solar cell 1 and are connected with the contacts of the back transverse fine grid 14 of the previous solar cell 1. As shown in fig. 4, 5, and 6, the long sides of adjacent solar cells 1 overlap to form surface contacts 20; adjacent solar cells 1 are connected by contacts 111, and a cell string 10 is formed by applying a conductive paste on the contacts 111 and curing.
The whole silicon wafer in the industry is generally equal in length and width and is large in size of 156+/-2 mm, and the whole silicon wafer or the fragments are laminated, so that the method is simple and convenient, and the production efficiency is high.
The adjacent whole sheets or the separated sheets are connected through the contact and the conductive adhesive, so that the manufacturing flow of the double-sided assembly is greatly simplified, and the equipment cost and the production cost are reduced;
the adjacent whole sheets or the separated sheets are connected through the contact and the conductive adhesive, so that the series resistance and the resistance loss are reduced, and the power of the double-sided assembly is obviously improved;
The invention coats conductive adhesive on the contact between adjacent whole sheets or between the sheets, and forms the battery string after curing, the process flow is simple, and the cost is reduced.
The cell strings 10 of the present invention may be arranged in one or more rows of cell strings, with the solar cells 1 of each row of cell strings 10 being connected in series. When the cell strings 10 are arranged in a plurality of rows, the solar cells 1 of the single row of cell strings 10 are connected in series; the different rows of battery strings 10 are connected in parallel or in other manners, and the connection manners are various, and the present invention is not limited thereto. Preferably, the different rows of battery strings 10 are connected in parallel or in series by solder strips.
In each row of battery strings, solar cells are connected in a front-back lamination mode, metal welding strips are not arranged on the surfaces of the solar cells, gaps are not arranged among the cells, the usable area of the surfaces of the components is fully utilized, and the line loss of the traditional metal welding strips is reduced, so that the conversion efficiency of the components is greatly improved;
The traditional metal welding strip connection mode is wire connection, and the assembly is surface connection, so that the connection force between the battery pieces is effectively improved, and the assembly is more reliable.
As shown in fig. 6 to 13, the present invention further provides a second embodiment of the grid-shaped double-sided direct connection solar cell module, which further includes the second solar cell;
as shown in fig. 7 and 8, and fig. 9 and 10, the second solar cell includes a second front electrode and a second back electrode, where the second front electrode and the second back electrode are both provided with a transverse fine grid, at least one of the second front electrode and the second back electrode is provided with a longitudinal main grid, and the longitudinal main grid is connected with the transverse fine grid.
Specifically, there are various embodiments of the electrode of the second solar cell, including:
(1) As shown in fig. 7 and 8, the front electrode of the second solar cell 1B includes a plurality of front transverse thin grids 11, 1 front longitudinal main grid 12 and a plurality of front longitudinal thin grids 13, and the back electrode includes a plurality of back transverse thin grids 14, contacts 111 provided at the ends of the back transverse thin grids 14 and a plurality of back longitudinal thin grids 16, named as a second solar cell a;
(2) As shown in fig. 9 and 10, the front electrode of the second solar cell 1C includes a plurality of front transverse thin grids 11, contacts 111 disposed at the ends of the front transverse thin grids 11, and a plurality of front longitudinal thin grids 13, and the rear electrode includes a plurality of rear transverse thin grids 14, 1 rear longitudinal main grid 15, and a plurality of rear longitudinal thin grids 16, which are named as a second solar cell B.
As shown in fig. 11 to 14, the cell string 10 of the present invention may be arranged in one or more rows of cell strings, each row of cell strings including one second solar cell sheet 1B, one or more first solar cell sheets 1A, and one second solar cell sheet 1C, the second solar cell sheet 1B, the first solar cell sheet 1A, and the second solar cell sheet 1C being sequentially stacked. The longitudinal main grids of the second solar cells 1B and 1C serve as the positive and negative electrodes of the cell string.
In the stacking arrangement process, adjacent solar cells 1 are connected through contacts 111, and the contacts 111 of the front electrode of each solar cell 1 are arranged on the back surface of the previous solar cell 1 and are connected with the contacts 111 of the back transverse fine grid 14 of the previous solar cell 1. The long sides of adjacent solar cells 1 are overlapped to form surface contact 20; adjacent solar cells 1 are connected by contacts 111, and a cell string 10 is formed by applying a conductive paste on the contacts 111 and curing.
The solar cells 1 of each row of the cell strings 10 are connected in series. When the cell strings 10 are arranged in a plurality of rows, the solar cells 1 of the single row of cell strings 10 are connected in series; the different rows of battery strings 10 are connected in parallel or in other manners, and the connection manners are various, and the present invention is not limited thereto. Preferably, the longitudinal main grids are connected in parallel or in series between the different rows of battery strings 10 through welding strips, so that the connection is simple and the reliability is high.
Further, in connection with the different embodiments shown in fig. 1-14, the solar cell 1 is a whole piece of silicon wafer or a split piece after being processed. The processing sequentially comprises the following steps: forming a suede on the front side and the back side of a whole silicon wafer or a split wafer, forming PN junctions by diffusion, doping, polishing the back side, depositing passivation films on the front side and the back side, grooving the back side, printing a front electrode and a back electrode, sintering, resisting LID annealing and carrying out grading test.
According to the invention, the preparation process of the battery strings is integrated into the manufacturing process of the common solar cells, after the sintering step of the common solar cells, the contact points are coated with conductive adhesive, and the battery strings are connected through lamination arrangement and heating solidification. The invention has simple process flow, mature process steps, and is integrated into the common solar cell manufacturing process, thereby reducing the error probability in the manufacturing process and increasing the reliability of the product.
Preferably, the width of the contacts 111 is at least 20% greater than the width of the lateral fine gate. When the width of the contact 111 is 20% greater than that of the lateral fine grid, the stability of the connection of the adjacent solar cells through the lateral fine grid can be ensured, and the series resistance and the resistance loss are reduced. When the width of the contact 111 is greater than a certain proportion, the contact 111 is connected with the contact 111 to form a longitudinal main grid.
More preferably, the width of the contact 111 is 20-50% larger than that of the transverse fine grid, so that the stability of the connection of the adjacent solar cells 1 through the transverse fine grid can be ensured, the series resistance and the resistance loss are reduced, and the power of the assembly is obviously improved. Moreover, the slurry in the overlapping area can be saved, so that the method can be implemented at lower cost. When the width of the contact is 20-50% greater than the width of the lateral fine gate, the series resistance and resistance loss can be reduced by an additional 25% on the premise of the basic scheme of the invention.
Correspondingly, the invention also discloses a preparation method of the grid-shaped double-sided direct connection solar cell module, which is shown in fig. 15 and comprises the following steps:
S101, preprocessing the silicon wafer, printing a front electrode and a back electrode on the surface of the silicon wafer, and drying to obtain the solar cell.
Specifically, the front electrode and the back electrode are printed on the silicon wafer according to the pattern design of the electrodes.
S102, performing high-temperature sintering on the solar cell to solidify the slurry.
And S103, performing LID annealing resistance on the solar cell, and performing grading test.
After the step test, the batteries with the same gear are packaged into the same component, so that the maximum power output of the component and the stability of power output are ensured.
The anti-LID annealing is referred to as anti-light attenuation annealing.
S104, printing conductive adhesive on the contact.
And S105, stacking and arranging the solar cells one by one along the side where the contacts are positioned, and connecting adjacent solar cell contacts to form a cell string.
S106, heating and curing the battery strings, and packaging the battery strings into a double-sided direct-connection assembly.
Further, the preprocessing includes:
(1.1) forming texture surfaces on the front surface and the back surface of the silicon wafer;
the silicon chip can be P-type silicon or N-type silicon.
(1.2) Performing high-square-resistance diffusion on the front surface of the silicon wafer to form a PN junction;
The sheet resistance is generally preferably 80 to 200Ω/≡, but is not limited thereto.
(1.3) Carrying out selective laser doping on the front surface of the silicon wafer;
The laser doping pattern needs to correspond to the subsequent front electrode auxiliary grid pattern, and the laser doping pattern is designed by adopting the prior art.
(1.4) Removing byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back surface of the silicon wafer;
if phosphorus diffusion is adopted to form N-type silicon on the front surface of the silicon wafer, the byproduct is phosphosilicate glass;
if boron diffusion is adopted to form P-type silicon on the front surface of the silicon wafer, the byproduct is borosilicate glass.
(1.5) Depositing a passivation film and a protective film on the back surface of the silicon wafer;
The passivation film is preferably a silicon oxide film, an aluminum oxide film, or a silicon nitride film, and the protective film is preferably a silicon nitride film, a silicon oxynitride film, a silicon oxide film, or a composite film composed of the above films, but is not limited thereto.
(1.6) Depositing a passivation film and an antireflection film on the front surface of the silicon wafer;
the passivation film is preferably a silicon dioxide film, an aluminum oxide film or a silicon nitride film; the anti-reflection film is preferably a silicon nitride film or a silicon oxide film, but is not limited thereto.
And (1.7) carrying out laser grooving on the passivation film and the protection film on the back surface of the silicon wafer.
The laser grooving pattern corresponds to a subsequent back longitudinal fine grid line pattern, and is generally linear or line-segment.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (9)
1. The grid-shaped double-sided direct-connected solar cell module comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string;
the first solar cell comprises a first front electrode and a first back electrode, wherein the first front electrode and the first back electrode are respectively provided with a transverse fine grid, a longitudinal fine grid and a contact, the contacts are arranged at the end parts of the transverse fine grids, and the transverse fine grids and the longitudinal fine grids are vertically connected to form a grid shape;
the long sides of adjacent solar cells are overlapped to form surface contact;
Adjacent solar cells are connected through contacts, conductive adhesive is coated on the contacts, and a cell string is formed through curing;
the width of the contact is 20-50% larger than that of the transverse fine grid;
the width of the transverse fine grid is 10% -30% larger than that of the longitudinal fine grid.
2. The grid-like double-sided direct solar cell module of claim 1, wherein the solar cell is a processed whole piece of silicon wafer or a split piece.
3. The grid-like double-sided direct solar cell module of claim 2, wherein the process comprises, in order: forming a suede on the front side and the back side of a whole silicon wafer or a split wafer, forming PN junctions by diffusion, doping, polishing the back side, depositing passivation films on the front side and the back side, grooving the back side, printing a front electrode and a back electrode, sintering, resisting LID annealing and carrying out grading test.
4. The grid-like double-sided direct-connected solar cell module of claim 1, 2 or 3, wherein contacts are provided on the front-side and back-side lateral thin grids of the first solar cell sheet, the contacts being provided at the ends of the front-side lateral thin grids;
The contacts of the front transverse fine grid of each solar cell are arranged on the back surface of the front solar cell and are connected with the contacts of the back transverse fine grid of the front solar cell.
5. The grid-like double-sided direct-attached solar cell module of claim 4, wherein the contacts are circular contacts, rectangular contacts, regular polygon contacts, or linear contacts.
6. The grid-like double-sided direct connection solar cell assembly of claim 1, wherein the solar cell further comprises a second solar cell, the second solar cell comprises a second front electrode and a second back electrode, the second front electrode and the second back electrode are both provided with transverse thin grids, at least one of the second front electrode and the second back electrode is provided with a longitudinal main grid, and the longitudinal main grid is connected with the transverse thin grids.
7. The grid-like bifacial direct solar cell module according to claim 6 wherein said solar cell sheet comprises a second solar cell sheet a, a second solar cell sheet B and a first solar cell sheet;
the front electrode of the second solar cell A comprises a plurality of front transverse thin grids, 1 front longitudinal main grid and a plurality of front longitudinal thin grids, and the back electrode comprises a plurality of back transverse thin grids, contacts arranged at the end parts of the back transverse thin grids and a plurality of back longitudinal thin grids;
the front electrode of the second solar cell B comprises a plurality of front transverse thin grids, contacts arranged at the end parts of the front transverse thin grids and a plurality of front longitudinal thin grids, and the back electrode comprises a plurality of back transverse thin grids, 1 back longitudinal main grid and a plurality of back longitudinal thin grids;
The front electrode of the first solar cell comprises a plurality of front transverse thin grids, contacts arranged at the end parts of the front transverse thin grids and a plurality of front longitudinal thin grids, and the back electrode comprises a plurality of back transverse thin grids, contacts arranged at the end parts of the back transverse thin grids and a plurality of back longitudinal thin grids;
The second solar cell A, the first solar cell and the second solar cell B are sequentially stacked and connected.
8. A method of manufacturing a solar cell module according to any one of claims 1 to 7, comprising:
(1) Preprocessing a silicon wafer, printing a front electrode and a back electrode on the surface of the silicon wafer, and drying to obtain a solar cell;
(2) Sintering the solar cell at high temperature to solidify the slurry;
(3) Performing LID resistance annealing on the solar cell, and performing grading test;
(4) Printing conductive adhesive on the contact;
(5) Stacking solar cells one by one along the side where the contacts are positioned, and connecting adjacent solar cell contacts to form a cell string;
(6) And heating and curing the battery strings, and packaging the battery strings into a double-sided direct-connection assembly.
9. The method for manufacturing a grid-like double-sided direct solar cell module according to claim 8, wherein the pretreatment is performed on a silicon wafer, the pretreatment comprising:
(1.1) forming texture surfaces on the front surface and the back surface of the silicon wafer;
(1.2) performing high-square-resistance diffusion on the front surface of the silicon wafer to form a PN junction;
(1.3) carrying out selective laser doping on the front surface of the silicon wafer;
(1.4) removing byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back surface of the silicon wafer;
(1.5) depositing a passivation film and a protective film on the back surface of the silicon wafer;
(1.6) depositing a passivation film and an antireflection film on the front surface of the silicon wafer;
and (1.7) carrying out laser grooving on the passivation film and the protection film on the back surface of the silicon wafer.
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| CN111403525A (en) * | 2018-12-28 | 2020-07-10 | 泰州隆基乐叶光伏科技有限公司 | Solar cell interconnection structure |
| CN111403524A (en) * | 2018-12-28 | 2020-07-10 | 泰州隆基乐叶光伏科技有限公司 | Double-sided solar cell interconnection structure |
| CN110164988A (en) * | 2019-06-02 | 2019-08-23 | 苏州英鹏新能源有限公司 | Solar battery sheet component |
| CN110544729A (en) * | 2019-08-09 | 2019-12-06 | 中山瑞科新能源有限公司 | CdTe double-sided solar cell and preparation method thereof |
| CN111785790A (en) * | 2020-08-05 | 2020-10-16 | 晶电科技(苏州)有限公司 | Connecting structure of solar photovoltaic cell module |
| CN112447866A (en) * | 2020-12-01 | 2021-03-05 | 苏州元昱新能源有限公司 | Heterojunction photovoltaic cell surface electrode structure |
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