CN108987422A - Imaging sensor and its manufacturing method, identity recognition device and equipment - Google Patents
Imaging sensor and its manufacturing method, identity recognition device and equipment Download PDFInfo
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- CN108987422A CN108987422A CN201810846913.3A CN201810846913A CN108987422A CN 108987422 A CN108987422 A CN 108987422A CN 201810846913 A CN201810846913 A CN 201810846913A CN 108987422 A CN108987422 A CN 108987422A
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- photodiode
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- 238000003384 imaging method Methods 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 238000002955 isolation Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 26
- 238000010276 construction Methods 0.000 claims description 17
- 238000012856 packing Methods 0.000 claims description 9
- 238000001579 optical reflectometry Methods 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 229910001940 europium oxide Inorganic materials 0.000 description 4
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- 238000000034 method Methods 0.000 description 4
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- UPEMFLOMQVFMCZ-UHFFFAOYSA-N [O--].[O--].[O--].[Pm+3].[Pm+3] Chemical compound [O--].[O--].[O--].[Pm+3].[Pm+3] UPEMFLOMQVFMCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 2
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
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- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 2
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000003486 chemical etching Methods 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The application is suitable for field of photoelectric technology, provides a kind of imaging sensor comprising semiconductor substrate, photodiode and reflecting layer.The semiconductor substrate includes the upper surface and the lower surface being disposed opposite to each other.The photodiode is formed in the side that the semiconductor substrate is internally located at the upper surface.The photodiode, which is received, to be reflected into the imaging ray come by an object and the received imaging ray of institute is converted into electric signal.Imaging ray is arranged on the propagation path after the photodiode in the reflecting layer, and the imaging ray for passing through the photodiode and being not translated to electric signal is reflected back the photodiode.The application also provides manufacturing method, identity recognition device and the equipment of a kind of imaging sensor.
Description
Technical field
The application belongs to field of photoelectric technology more particularly to a kind of imaging sensor and its manufacturing method, identification dress
It sets and equipment.
Background technique
The structure of conventional image sensor is mainly used for that visible light is imaged, and because visible wavelength is relatively short, wears
The depth of light transmission electric diode is shallower, can largely be absorbed by photodiode and be converted to electric signal.However, when needing to wave
When long longer infrared or near infrared light is imaged, often because infrared or near infrared light penetration capacity is stronger, light is bypassed
Electric diode and can not be fully absorbed and be converted to electric signal, so as to cause conventional image sensor to infrared or near infrared light
Quantum efficiency (Quantum Efficiency, QE) when imaging is lower, influences image quality.
Summary of the invention
Technical problems to be solved in this application are to provide a kind of imaging sensor and its manufacturing method, identification dress
It sets and equipment, it is intended to imaging sensor can be effectively improved to the quantum effect of near infrared light.
The application embodiment provides a kind of imaging sensor comprising semiconductor substrate, photodiode and reflecting layer.
The semiconductor substrate includes the upper surface and the lower surface being disposed opposite to each other.The photodiode is formed in the semiconductor substrate
It is internally located at the side of the upper surface.The photodiode, which is received, reflects into the imaging ray come by an object and by institute
Received imaging ray is converted into electric signal.Propagation of the imaging ray after the photodiode is arranged in the reflecting layer
On path, the imaging ray for passing through the photodiode and being not translated to electric signal is reflected back two pole of photoelectricity
Pipe.
In some embodiments, described image sensor further includes the isolation junction for adjacent photodiode to be isolated
Structure.The isolation structure includes being formed in inside the semiconductor substrate and around the groove of each photodiode setting.
In some embodiments, the isolation structure is up-side down triangle along the cross section of its own extending direction.And institute
The inner width for stating up-side down triangle is gradually decreased from the upper surface to the lower surface.
In some embodiments, the isolation structure is rectangle along the cross section of its own extending direction.
In some embodiments, the rectangular aspect ratio is more than or equal to 10 to 1, and is less than or equal to 100 to 1.
In some embodiments, the isolation structure is inverted trapezoidal along the cross section of its own extending direction.
In some embodiments, the groove of the isolation structure is extended from upper surface to lower surface, and is extended to
With following table face contact.
In some embodiments, packing material is provided in the groove, the packing material is dielectric material.
In some embodiments, reflecting layer is provided on the inner surface of the isolation structure.
In some embodiments, the reflecting layer is arranged on the lower surface and towards the photodiode.
In some embodiments, described image sensor further includes a support construction.The support construction setting exists
Side where the lower surface of entire semiconductor substrate, for improving the mechanical strength of described image sensor.
In some embodiments, the reflector material is with higher infrared or near infrared light reflectivity material
Material.
The application embodiment also provides a kind of manufacturing method of imaging sensor comprising following steps:
Semi-conductive substrate is provided, the semiconductor substrate includes the upper surface and the lower surface being oppositely arranged, described half
The side that conductor substrate interior is located at the upper surface forms multiple photodiodes；And
The lower surface be arranged a reflecting layer, be not translated to passing through the photodiode electric signal at
As light is reflected back the photodiode.
In some embodiments, it further includes as follows for being formed inside the semiconductor substrate after multiple photodiodes
Step: multiple isolation structures around each photodiode are formed in the semiconductor substrate with by adjacent two pole of photoelectricity
Pipe is electrically isolated from one another, and the isolation structure includes being formed in inside the semiconductor substrate and setting around each photodiode
The groove set.
It in some embodiments, further include following steps after forming the isolation structure: in the isolation structure
Reflecting layer is formed on inner surface.
In some embodiments, further include following steps:
Before the reflecting layer is arranged in the lower surface, it is arranged on the upper surface for being formed with the photodiode
The auxiliary support plate of one mechanical strength for improving the semiconductor substrate；
The semiconductor substrate is thinned to preset thickness, and partly leading after being thinned since the lower surface side
The reflecting layer is set on the lower surface of body substrate；
After setting reflecting layer, setting one is used on the surface of the semiconductor substrate on the reflecting layer
Improve the support construction of described image sensor mechanical strength；And
Remove the auxiliary support plate.
The application embodiment also provides a kind of identity recognition device comprising lens assembly, light source module group, identification mould group
And the imaging sensor of above-mentioned any one embodiment.The light source module group is for emitting imaging ray.Described image sensor
For receiving the imaging ray reflected by an object by the lens assembly, to sense the image of the object.It is described
Identify that mould group carries out identification for the image according to acquired in described image sensor.
In some embodiments, described image sensor obtains the face image of object.The identification mould group is face
Portion identifies mould group.The face recognition mould group according to identity of the face image to object for identifying.The identity is known
Other device is face authentification device.
Embodiment further provides a kind of equipment by the application comprising the identification of above-mentioned any one embodiment fills
It sets.The equipment is for executing corresponding function according to the recognition result of the identity recognition device.
In some embodiments, corresponding function includes unlock, payment, starts appointing in the application program prestored
Meaning is one or more of.
Compared with prior art, the imaging sensor of the application embodiment offer and its manufacturing method, identification dress
Set and equipment by setting reflecting layer by bypassed the photodiode be not converted into electric signal imaging ray reflect
The photodiode is returned, so as to effectively improve imaging sensor to infrared or near infrared light quantum effect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the imaging sensor that the application first embodiment provides.
Fig. 2 is the flow diagram of the manufacturing method of the imaging sensor of Fig. 1.
Fig. 3 is the structural schematic diagram for the imaging sensor that the application second embodiment provides.
Fig. 4 is the structural schematic diagram for the imaging sensor that the application third embodiment provides.
Fig. 5 is the structural schematic diagram for the imaging sensor that the 4th embodiment of the application provides.
Fig. 6 is the structural schematic diagram for the identity recognition device that the 5th embodiment of the application provides.
Fig. 7 is the structural schematic diagram for the equipment that the application sixth embodiment provides.
Specific embodiment
In order to which the objects, technical solutions and advantages of the application are more clearly understood, below in conjunction with drawings and the embodiments,
The application is further elaborated.It should be appreciated that the specific embodiments described herein are only used to explain this Shen
Please, it is not used to limit the application.
Following disclosure provides many different embodiments or example is used to realize the different structure of the application.In order to
Simplify disclosure herein, hereinafter to the component of specific examples and being set for describing.Certainly, they are merely examples, and
And purpose does not lie in limitation the application.In addition, the application can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.
Further, described feature, structure can be incorporated in one or more embodiment party in any suitable manner
In formula.In the following description, many details are provided to provide and fully understand to presently filed embodiment.So
And one of ordinary skill in the art would recognize that, without one or more in the specific detail, or using other structures,
Constituent element etc. can also practice the technical solution of the application.In other cases, it is not shown in detail or describes known features or behaviour
Make to avoid fuzzy the application.
As shown in Figure 1, a kind of imaging sensor 100 provided by the application first embodiment comprising semiconductor lining
Bottom 10, photodiode 20, control circuit 30, isolation structure 40, reflecting layer 50 and support construction 60.
The semiconductor substrate 10 includes the upper surface 11 and lower surface 12 being disposed opposite to each other.In the present embodiment, described
Semiconductor substrate 10 is silicon substrate, and the thickness range of the semiconductor substrate 10 is 3 microns to 30 microns.Certainly, described half
Conductor substrate 10 may include epitaxial semiconductor material (such as monocrystalline silicon, silicon carbide, gallium nitride, the arsenic being grown on itself
Gallium etc.).
The multiple photodiode 20 is formed in the side that the semiconductor substrate 10 is internally located at the upper surface 11,
Electric signal is converted to for receiving the imaging ray reflected by an object, and by the received imaging ray of institute.Specifically, described
Photodiode 20 is based on photoelectric effect, using the photovoltaic effect of semiconductor, when photon is incident on exhausting for PN junction formation
When in layer, Atomic absorption photon energy in PN junction, and generate it is intrinsic exhaust, inspire electron-hole pair, it is built-in in depletion region
Electric field under the action of, hole is pulled to the area P, and electronics is pulled to the area N, forms reverse current, that is, photoelectric current.
In the present embodiment, the multiple photodiode 20 is arranged in array-like.It is understood that in other realities
It applies in mode, the multiple photodiode 20 can also be in other spread geometries according to the imaging requirements of imaging sensor 100.
The control circuit 30 includes sense amplifier and high-speed AD converter.The sense amplifier is for reading institute
Electric signal made of photodiode 20 is converted as imaging ray is stated, to obtain the analog signal for being loaded with image-forming information.The height
Fast analog-digital converter is for being converted into digital signal for the read analog signal of the sense amplifier and exporting.
The isolation structure 40 is formed in the semiconductor substrate 10, from the upper surface 11 towards the lower surface 12
Extend and surround each photodiode 20, for keeping apart adjacent photodiode 20, to prevent neighbouring two pole of photoelectricity
The electric signal generated of pipe 20 occurs crosstalk between each other and influences image quality.The isolation structure 40 is along its own extension side
To cross section be up-side down triangle, the inner width of the up-side down triangle gradually subtracts from the upper surface 11 to the lower surface 12
Few, the depth of the isolation structure 40 can be adjusted according to the electrical characteristic of device.The isolation structure 40, which can be, to be surrounded
The groove that each photodiode 20 opens up, for example, shallow trench isolation (shallow trench isolation, STI) structure or
Deep trench isolation (deep trench isolation, DTI) structure.The groove can be formed in described half by etch process
In conductor substrate 10, packing material is provided in the groove, the packing material can be dielectric material, by adjacent light
Electric diode 20 is electrically isolated from one another.In the present embodiment, the packing material is oxide, such as: hafnium oxide (HfO2Or
HfOx), silica (SiO2), silicon nitride (Si3N4), silicon oxynitride (SiOxNy), tantalum oxide (Ta2O5), titanium oxide (TiO2), oxygen
Change zirconium (ZrO2), aluminium oxide (Al2O3), lanthana (La2O3), praseodymium oxide (Pr2O3), cerium oxide (CeO2), neodymia (Nd2O3)、
Promethium oxide (Pm2O3), samarium oxide (Sm2O3), europium oxide (Eu2O3), gadolinium oxide (Gd2O3), terbium oxide (Tb2O3), dysprosia
(Dy2O3), holimium oxide (Ho2O3), erbium oxide (Er2O3), thulium oxide (Tm2O3), ytterbium oxide (Yb2O3), luteium oxide (Lu2O3), oxygen
Change yttrium (Y2O3) or the like.It is understood that in other embodiments, the isolation structure 40 can be electrical for other
Isolation structure.
The reflecting layer 50 for will inject into bypassed the photodiode 20 after the semiconductor substrate 10 and not by
The imaging ray that the photodiode 20 is converted into electric signal is reflected back the photodiode 20, is existed with increasing imaging ray
Light path in the semiconductor substrate 10 improves the probability that imaging ray is converted into electric signal by the photodiode 20.Institute
Stating reflecting layer 50 may be provided at imaging ray on the propagation path after the photodiode 20.In the present embodiment,
The reflecting layer 50 is arranged in the lower surface 12 of the semiconductor substrate 10 and towards the photodiode 20.
The reflecting layer 50 light reflectivity with higher, is firmly attached to the lower surface 12, and do not influence electrical property
Energy.Because infrared or near infrared light wavelength is longer, relatively penetrates readily through the photodiode 20 and be not converted into telecommunications
Number, so the material in the reflecting layer 50 is preferably that with higher infrared or near infrared light (Near Infrared, NIR) is anti-
Penetrate the material of rate.
In the present embodiment, the isolation structure 40 along the direction perpendicular to the reflecting layer 50 extend up to
The reflecting layer 50 contacts, to avoid not scattered or be diffracted into neighborhood pixels by the imaging ray that photodiode 20 absorbs
(i.e. optical crosstalk) or the electric signal for avoiding photodiode 20 from generating are diffused into neighborhood pixels (i.e. electrical crosstalk), can be effective
Reduce pixel cross-talk, and further increases the pixel performance and picture contrast of described image sensor 100.
It is understood that since imaging ray is reflected on the reflecting layer 50 of the lower surface 12, by institute
It states isolation structure 40 and is designed to up-side down triangle along the cross section of its own extending direction, so that between two neighboring isolation structure 40
It is formed by that space is bigger in the position closer to the reflecting layer 50, can allow imaging rays more as far as possible that can reach in this way
Enter corresponding photodiode 20 on the reflecting layer 50 and after being reflected, to improve the photodiode 20 to near-infrared
Absorption efficiency, photoelectric conversion efficiency and the quantum effect of light.
The side where the lower surface 12 of entire semiconductor substrate 10 is arranged in the support construction 60, for scheming to be entire
As sensor 100 provides enough mechanical strengths.The support construction 60 can be formed directly into the semiconductor substrate 10,
It can also be fixed in the semiconductor substrate 10 by modes such as bondings.The support construction 60 can use glass, plastics, gather
The materials such as object and polysilicon are closed to be made.The thickness of the support construction 60 is preferably 250 microns.In the present embodiment, described
Support construction 60 is arranged on surface of the reflecting layer 50 far from the semiconductor substrate 10.
As shown in Fig. 2, the manufacturing method of above-mentioned imaging sensor 100 includes the following steps:
S1: providing semi-conductive substrate 10, and the semiconductor substrate 10 includes the upper surface 11 and lower surface being oppositely arranged
12.Multiple photodiodes 20 and control circuit are formed in the side that the semiconductor substrate 10 is internally located at the upper surface 11
30, and multiple extend from the upper surface 11 towards the lower surface 12 and around each is formed in the semiconductor substrate 10
The isolation structure 40 of photodiode 20.In the present embodiment, the semiconductor substrate 10 is silicon substrate, and the semiconductor
The thickness range of substrate 10 is 3 microns to 30 microns.Certainly, the semiconductor substrate 10 may include be grown on it is outer on itself
Prolong semiconductor material (such as monocrystalline silicon, silicon carbide, gallium nitride, GaAs etc.).
In the present embodiment, the isolation structure 40 is up-side down triangle along the cross section of its own extending direction, described
The inner width of up-side down triangle is gradually decreased from the upper surface 11 to the lower surface 12.The up-side down triangle is along perpendicular to institute
The direction for stating lower surface 12 extends, until contacting with the lower surface 12.Certainly, the depth of the isolation structure 40 can be according to device
The electrical characteristic of part is adjusted.The isolation structure 40 can for shallow trench isolation (shallow trench isolation,
STI) structure or deep trench isolation (deep trench isolation, DTI) structure.The groove can pass through etch process shape
At packing material in the semiconductor substrate 10, is provided in the groove, the packing material can be dielectric material, with
Adjacent photodiode 20 is electrically isolated from one another.
In the present embodiment, the packing material is oxide, such as: hafnium oxide (HfO2Or HfOx), silica
(SiO2), silicon nitride (Si3N4), silicon oxynitride (SiOxNy), tantalum oxide (Ta2O5), titanium oxide (TiO2), zirconium oxide (ZrO2), oxygen
Change aluminium (Al2O3), lanthana (La2O3), praseodymium oxide (Pr2O3), cerium oxide (CeO2), neodymia (Nd2O3), promethium oxide (Pm2O3)、
Samarium oxide (Sm2O3), europium oxide (Eu2O3), gadolinium oxide (Gd2O3), terbium oxide (Tb2O3), dysprosia (Dy2O3), holimium oxide
(Ho2O3), erbium oxide (Er2O3), thulium oxide (Tm2O3), ytterbium oxide (Yb2O3), luteium oxide (Lu2O3), yttrium oxide (Y2O3) or class
Like object.It is understood that in other embodiments, the isolation structure 40 can be other kinds of electrical isolation knot
Structure.
S2: one is arranged on the upper surface 11 for be formed with photodiode 20 for improving 10 machine of semiconductor substrate
The auxiliary support plate 70 of tool intensity.The auxiliary support plate 70 can be formed directly in the semiconductor substrate 10, can also be bonded
In the semiconductor substrate 10.The auxiliary support plate 70 can be using materials systems such as glass, plastics, polymer and polysilicons
At.The thickness of the auxiliary support plate 70 is preferably 250 microns.
S3: the semiconductor substrate 10 is thinned to a preset thickness since 12 side of lower surface, and is being subtracted
One reflecting layer 50 is set on the lower surface 12 after thin.The reflecting layer 50 will be not translated to electric signal around photodiode 20
Imaging ray reflected light electric diode 20 improve to increase light path of the imaging ray in the semiconductor substrate 10
Imaging ray is converted into the probability of electric signal by the photodiode 20.
The reflecting layer 50 light reflectivity with higher.In the present embodiment, the material in the reflecting layer 50 is preferred
For with the material compared with high IR or near infrared light reflectivity.The reflecting layer 50 can be formed in described by the way of plating
Lower surface 12.
In the present embodiment, the predetermined thickness is preferably 20 microns.The lower surface 12 is using chemically mechanical polishing
Processing procedure (Chemical Mechanical Polishing, CMP) or the mode of chemical etching carry out the semiconductor substrate 10
It is thinned.
It is understood that half after can also being first thinned before the reflecting layer 50 is arranged on the lower surface 12
The lower surface 12 of conductor substrate 10 polishes smooth, to improve the conjugation in the reflecting layer 50 and lower surface 12.
S4: it is arranged one on the surface of the semiconductor substrate 10 on the reflecting layer 50 for improving the figure
As the support construction 60 of 100 mechanical strength of sensor, the auxiliary support plate 70 is finally removed, to obtain described image sensing
Device 100.The support construction 60 can be formed directly in the semiconductor substrate 10, can also be fixed on institute by modes such as bondings
It states in semiconductor substrate 10.The support construction 60 can be used the materials such as glass, plastics, polymer and polysilicon and be made.It is described
Support construction 60 with a thickness of 250 microns.
It is understood that in other embodiments, if the thickness of the semiconductor substrate 10 itself has met the requirements,
Then the reflecting layer 50 and support construction 60 can be arranged directly on the lower surface 12 of semiconductor substrate 10, and auxiliary branch is arranged
The step of fagging 70 and thinned semiconductor substrate 10, which can correspond to, saves.
As shown in figure 3, a kind of imaging sensor 100a and first implementation provided by the application second embodiment
The main distinction of mode is that the isolation structure 40a is inverted trapezoidal along the cross section of its own extending direction.
As shown in figure 4, a kind of imaging sensor 200 and first embodiment party provided by the application third embodiment
The main distinction of formula is that the inner surface of the groove of the isolation structure 240 is arranged in the reflecting layer 250, so that injecting institute
It has bypassed the photodiode 220 after stating semiconductor substrate 210 and electric signal is not converted by the photodiode 220
Imaging ray can constantly be reflected between multiple reflecting layer 250.
The depth of the isolation structure 240 can be done as needed enough to depth, can be increased imaging ray and partly be led described
Order of reflection in body substrate 210, so that most imaging ray can be converted into electric signal by photodiode 220, from
And photodiode is effectively improved for the quantum effect of near infrared light.
In the present embodiment, the isolation structure 240 is rectangular grooves along the cross section of its own extending direction, and
The aspect ratio of the rectangular grooves is more than or equal to 10 to 1, and is less than or equal to 100 to 1.Such as the aspect ratio when rectangular grooves
When being 50 to 1, width W1 is 0.5 micron, and depth D1 is 25 microns.
In the present embodiment, it is provided with a support construction 260 on the lower surface 212 of the semiconductor substrate 210, uses
In the mechanical strength for improving described image sensor 200.
As shown in figure 5, a kind of imaging sensor 300 and the third embodiment party provided by the 4th embodiment of the application
The main distinction of formula is, is all provided on the lower surface 312 of the semiconductor substrate 310 and the inner surface of the isolation structure 340
It is equipped with the reflecting layer 350, so that having bypassed the photodiode 320 after injecting the semiconductor substrate 310 and not by institute
State photodiode 320 be converted into electric signal imaging ray can by the lower surface 312 reflecting layer 350 and it is described every
350 reflected light electric diode 320 of multiple reflecting layer on inner surface from structure 340 increases imaging ray and partly leads described
Light path in body substrate 310, so that most imaging ray can be converted into electric signal by photodiode 320, to have
Effect improves photodiode 320 for the quantum effect of near infrared light.
In the present embodiment, the reflecting layer 350 is provided with a branch on the surface of the semiconductor substrate 310
Support structure 360, for improving the mechanical strength of described image sensor 300.
It is understood that in other embodiments, which may also be arranged in the semiconductor substrate 10 and removes
Other positions except first and third, four embodiments, the reflecting layer 50 can also tilt relative to the photodiode 20 and set
It sets, as long as the imaging ray can reach the reflecting layer 50 and be reflected back the photodiode 20 by the reflecting layer 50.
As shown in fig. 6, the 5th embodiment of the application also provides a kind of identity recognition device 400 comprising light source module group
410, lens assembly 420, above-mentioned imaging sensor 100 (200,300) and identification mould group 430.The light source module group 410 is used for
Emit imaging ray.Described image sensor 100 (200,300), which is used to receive by the lens assembly 420, comes from the mesh
The imaging ray of object reflection is marked, to obtain the image of the object.The identification mould group 430 according to described image for sensing
Image acquired in device 100 (200,300) carries out identification.
The identity recognition device 400 is, for example, face authentification device.So, the identity recognition device 400 can also be used for
Identify other proper sites of human body, or even other organisms or inorganic matter for identification.
Further, as shown in fig. 7, the 5th embodiment of the application provides a kind of equipment 500, it can be but do not limit to
In the equipment of the executable specific function such as electronic product, production equipment, the vehicles.Wherein, electronic product can be but not office
It is limited to mobile phone, tablet computer, laptop, tabletop display, computer all-in-one machine, intelligent door lock, TV, refrigerator, intelligence to wear
Wear formula equipment, automatic navigator, vehicle-carrying DVD, ATM machine, self-service transacting business etc..The production equipment can be, but not limited to,
Lathe, molding machine, auxiliary robot, carrying implement etc..The vehicles can be, but not limited to, bicycle, motor vehicle, fly
Machine, unmanned plane, ship, speedboat, scooter etc..The equipment 500 includes above-mentioned identity recognition device 400.500 basis of equipment
Whether the identification result of the identity recognition device 400 executes corresponding function to correspond to.Corresponding function includes
But it is not limited to unlock, payment, any one or a few in the application program that prestores of starting.
In the present embodiment, it is illustrated so that equipment 500 is mobile phone as an example.The mobile phone, for example, it may be screen comprehensively
Mobile phone, the identity recognition device 400, for example, can be set on the positive top of mobile phone.Certainly, the mobile phone is also and unlimited
It is formed on comprehensive screen mobile phone.
For example, the screen for lifting mobile phone or touch mobile phone can act as wake-up when user needs to boot up unlock
The effect of the identity recognition device 400.After the identity recognition device 400 is waken up, identify in front of the mobile phone
User when being legal user, then solve lock screen.
Compared with prior art, imaging sensor and its manufacturing method, the identity recognition device and equipment of the application leads to
The inner surface setting reflecting layer of the lower surface and/or the isolation structure in the semiconductor substrate is crossed, will inject into described half
The photodiode has been bypassed after conductor substrate and has not been reflected by the imaging ray that the photodiode is converted into electric signal
The photodiode is returned, therefore imaging sensor can be effectively improved to the quantum effect of near infrared light.Simultaneously as it is described every
It is arranged from structure around each photodiode, therefore optical crosstalk and electrical crosstalk between adjacent pixel can also be reduced.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the application.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
The foregoing is merely the better embodiments of the application, all the application's not to limit the application
Made any modifications, equivalent replacements, and improvements etc., should be included within the scope of protection of this application within spirit and principle.
Claims (20)
1. a kind of imaging sensor comprising semiconductor substrate, photodiode and reflecting layer, the semiconductor substrate include phase
The upper surface and the lower surface of setting is carried on the back, the photodiode is formed in the semiconductor substrate and is internally located at the upper surface
Side, the photodiode, which receives, to be reflected into the imaging ray come and be converted into the received imaging ray of institute by an object
Electric signal, imaging ray is arranged on the propagation path after the photodiode in the reflecting layer, for passing through
The imaging ray stated photodiode and be not translated to electric signal is reflected back the photodiode.
2. imaging sensor as described in claim 1, which is characterized in that described image sensor further includes adjacent for being isolated
The isolation structure of photodiode, the isolation structure include being formed in inside the semiconductor substrate and around each photoelectricity two
The groove of pole pipe setting.
3. imaging sensor as claimed in claim 2, which is characterized in that cross of the isolation structure along its own extending direction
Section is up-side down triangle, and the inner width of the up-side down triangle is gradually decreased from the upper surface to the lower surface.
4. imaging sensor as claimed in claim 2, which is characterized in that cross of the isolation structure along its own extending direction
Section is rectangle.
5. imaging sensor as claimed in claim 4, which is characterized in that the rectangular aspect ratio is more than or equal to 10 to 1,
And it is less than or equal to 100 to 1.
6. imaging sensor as claimed in claim 2, which is characterized in that cross of the isolation structure along its own extending direction
Section is inverted trapezoidal.
7. imaging sensor as claimed in claim 2, which is characterized in that the groove of the isolation structure is from upper surface to following table
Face is extended, and is extended to and following table face contact.
8. imaging sensor as claimed in claim 2, which is characterized in that packing material is provided in the groove, it is described to fill out
Filling material is dielectric material.
9. such as the described in any item imaging sensors of claim 2-8, which is characterized in that set on the inner surface of the isolation structure
It is equipped with reflecting layer.
10. imaging sensor as described in claim 1, which is characterized in that the reflecting layer is arranged on the lower surface simultaneously
Towards the photodiode.
11. imaging sensor as described in claim 1, which is characterized in that described image sensor further includes a support knot
Structure, the side where the lower surface of entire semiconductor substrate is arranged in the support construction, for improving described image sensor
Mechanical strength.
12. imaging sensor as described in claim 1, which is characterized in that the reflector material is with higher infrared
Or the material of near infrared light reflectivity.
13. a kind of manufacturing method of imaging sensor, which comprises the steps of:
Semi-conductive substrate is provided, the semiconductor substrate includes the upper surface and the lower surface being oppositely arranged, in the semiconductor
The side that substrate interior is located at the upper surface forms multiple photodiodes；And
One reflecting layer is set in the lower surface, the imaging of electric signal is not translated to pass through the photodiode
Line reflection returns the photodiode.
14. the manufacturing method of imaging sensor as claimed in claim 13, which is characterized in that inside the semiconductor substrate
Forming multiple photodiodes further includes later following steps: being formed in the semiconductor substrate multiple around each photoelectricity two
For the isolation structure of pole pipe adjacent photodiode to be electrically isolated from one another, the isolation structure includes being formed in described partly to lead
Inside body substrate and around the groove of each photodiode setting.
15. the manufacturing method of imaging sensor as claimed in claim 14, which is characterized in that after forming the isolation structure
Further include following steps: forming reflecting layer on the inner surface of the isolation structure.
16. the manufacturing method of imaging sensor as claimed in claim 13, which is characterized in that further include following steps:
Before the reflecting layer is arranged in the lower surface, one is arranged on the upper surface for be formed with the photodiode
For improving the auxiliary support plate of the mechanical strength of the semiconductor substrate；
The semiconductor substrate is thinned to preset thickness since the lower surface side, and the semiconductor lining after being thinned
The reflecting layer is set on the lower surface at bottom；
After setting reflecting layer, it is arranged one on the surface of the semiconductor substrate on the reflecting layer for improving
The support construction of described image sensor mechanical strength；And
Remove the auxiliary support plate.
17. a kind of identity recognition device comprising in lens assembly, light source module group, identification mould group and the claims 1-12
Described in any item imaging sensors, the light source module group is for emitting imaging ray, and described image sensor is for passing through institute
It states lens assembly and receives the imaging ray reflected by an object, to sense the image of the object, the identification mould group is used
Identification is carried out in the image according to acquired in described image sensor.
18. identity recognition device as claimed in claim 17, which is characterized in that the face of described image sensor acquisition object
Portion's image, the identification mould group are face recognition mould group, and the face recognition mould group is used for according to face image to object
Identity is identified that the identity recognition device is face authentification device.
19. a kind of equipment comprising the described in any item identity recognition devices of the claims 16 or 17, the equipment are used for
Corresponding function is executed according to the recognition result of the identity recognition device.
20. equipment as claimed in claim 19, which is characterized in that corresponding function is prestored including unlock, payment, starting
Application program in any one or a few.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810846913.3A CN108987422A (en) | 2018-07-27 | 2018-07-27 | Imaging sensor and its manufacturing method, identity recognition device and equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810846913.3A CN108987422A (en) | 2018-07-27 | 2018-07-27 | Imaging sensor and its manufacturing method, identity recognition device and equipment |
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Application publication date: 20181211 |