CN108950511A - The measuring device and film-forming apparatus of film forming thickness - Google Patents
The measuring device and film-forming apparatus of film forming thickness Download PDFInfo
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- CN108950511A CN108950511A CN201810786259.1A CN201810786259A CN108950511A CN 108950511 A CN108950511 A CN 108950511A CN 201810786259 A CN201810786259 A CN 201810786259A CN 108950511 A CN108950511 A CN 108950511A
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- film forming
- vibration
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- chip
- pedestal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
The invention discloses the measuring device of film forming thickness and film-forming apparatus, the measuring device of the film forming thickness includes pedestal, protection cap and heat source, and the crystal-vibration-chip for measuring film forming thickness is provided on the pedestal；The protection cap covers on the pedestal, and the opening for passing through and depositing on the crystal-vibration-chip film forming for filmogen is provided in the protection cap；The heat source makes it be evaporated removal for heating the film deposited on the crystal-vibration-chip.The measuring device of the film forming thickness heats the crystal-vibration-chip after film forming by setting heat source inside, it is evaporated the film on crystal-vibration-chip, the cumbersome maintenance procedures such as the film on crystal-vibration-chip are removed again without disassembly crystal-vibration-chip, maintenance cost has been saved, and has effectively improved film forming efficiency.
Description
Technical field
The present invention relates to the measuring device of the technical field of film-forming process, especially film forming thickness and film-forming apparatus.
Background technique
In current film-forming process, film forming thickness is measured often through crystal-vibration-chip, is realized to film forming thickness and rate of film build
It is monitored in real time, filmogen forms a film on crystal-vibration-chip and substrate to be filmed simultaneously, is sending out according to crystal-vibration-chip is measured
Vibration frequency when raw piezoelectric effect obtains the thickness currently to form a film, and can calculate rate of film build, and then realizes and controllably exist
The film of specified thickness is made on substrate.But due to crystal-vibration-chip piezoelectric effect inherently and the line of vibration frequency decaying
Property validity, with the increase of the thickness of film on the crystal-vibration-chip, the film forming thickness that is measured by the vibration frequency of crystal-vibration-chip
Accuracy will decline, and therefore, crystal-vibration-chip must carry out the film on replacement or crystal-vibration-chip to be removed in use for some time
It comes into operation again afterwards, which results in the reduction of production efficiency and increases maintenance cost.
Summary of the invention
In view of this, the purpose of the present invention is to provide the measuring device of film forming thickness and film-forming apparatus, on solving
State problem.
In order to achieve the above purpose, present invention employs the following technical solutions:
The present invention provides a kind of measuring device of film forming thickness, including pedestal, protection cap and heat source, set on the pedestal
It is equipped with the crystal-vibration-chip for measuring film forming thickness；The protection cap covers on the pedestal, is provided with confession in the protection cap
Filmogen passes through and deposits the opening of film forming on the crystal-vibration-chip；The heat source is used to heat to deposit on the crystal-vibration-chip
Film makes it be evaporated removal.
Preferably, it is provided with multiple crystal-vibration-chips on the pedestal, the region limit of the opening is corresponded on the pedestal
It is set to film forming area, the pedestal can relatively move with the protection cap, different crystal-vibration-chips is switched in the film forming area.
Preferably, multiple crystal-vibration-chips are arranged on the pedestal in circular ring shape, and the pedestal and the protection cap can
Relative rotation switches to different crystal-vibration-chips in the film forming area.
Preferably, the pedestal defines heat affected zone, and the heat source is fixed on the protection cap towards the one of the pedestal
On face and when being oriented heating, the pedestal and the protection cap relative rotation to the heat affected zone, film will be deposited with
Crystal-vibration-chip is moved in the heat affected zone.
Preferably, multiple crystal-vibration-chips are in rotational symmetry, the position restriction in the film forming area and the heat affected zone are as follows: when
When one crystal-vibration-chip is moved in the heat affected zone, there are another crystal-vibration-chips to switch in the film forming area.
Preferably, the film forming area and the heat affected zone are located at the multiple crystal-vibration-chip and arrange the same of the circular ring shape to be formed
Diametrically, and the film forming area and the heat affected zone are located at the both ends of the diameter.
Preferably, multiple crystal-vibration-chips are arranged side by side on the pedestal, along the orientation of the multiple crystal-vibration-chip
On, the pedestal can be moved back and forth with the protection cap, and different crystal-vibration-chips is switched in the film forming area.
Preferably, the pedestal defines heat affected zone, and the heat source is fixed on the protection cap towards the one of the pedestal
Film will be deposited with by face and being oriented heating when the pedestal and the protection cap move back and forth to the heat affected zone
Crystal-vibration-chip is moved in the heat affected zone, wherein along the moving direction of the relatively described protection cap of the pedestal, the heat affected zone
Positioned at the rear in the film forming area.
Preferably, the distance between two neighboring described crystal-vibration-chip is equal, it is described film forming area and the heat affected zone) position
It limits are as follows: when a crystal-vibration-chip is moved in the heat affected zone, there are another crystal-vibration-chips to switch in the film forming area.
The present invention provides a kind of film-forming apparatus, including film forming chamber, it is respectively arranged at the indoor film forming of the film forming chamber
The measuring device of the measuring device of material source and film forming thickness as described above, the film forming thickness is same from the filmogen source
Step obtains filmogen.
The measuring device and film-forming apparatus of film forming thickness provided by the invention, by the way that heat source pair is arranged in measuring device
Crystal-vibration-chip after film forming is heated, and the film on crystal-vibration-chip is removed, so that the crystal-vibration-chip can be reused for accurately forming a film
Thickness measure.The measuring device and film-forming apparatus remove the maintenance workers such as the film on crystal-vibration-chip without disassembly crystal-vibration-chip again
Sequence has saved maintenance cost, and has effectively improved film forming efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the measuring device for the film forming thickness that the embodiment of the present invention 1 provides；
Fig. 2 is the structural schematic diagram of the measuring device for the film forming thickness that the embodiment of the present invention 2 provides；
Fig. 3 is the structural schematic diagram for the film-forming apparatus that the embodiment of the present invention 3 provides.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, with reference to the accompanying drawing to specific reality of the invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show with closely related structure and/or processing step according to the solution of the present invention, and be omitted relationship it is little other are thin
Section.
Embodiment 1
(in Fig. 1, arrow A represents following filmogens, the heat that the following heat sources 3 of represented by arrow B issue shown in refering to fig. 1
Can), present embodiments provide a kind of measuring device 100 of film forming thickness, including pedestal 1, protection cap 2 and heat source 3.
Wherein, the crystal-vibration-chip 11 for measuring film forming thickness is provided on the pedestal 1；The protection cap 2 covers at institute
It states on pedestal 1, the opening for passing through and depositing on the crystal-vibration-chip 11 film forming for filmogen is provided in the protection cap 2
21；The heat source 3 makes it be evaporated removal for heating the film deposited on the crystal-vibration-chip 11.
Specifically, in the present embodiment, the heat source 3 is laser source, and the laser source is fixed on 2 direction of protection cap
In the one side of the pedestal 1.During the work time, filmogen is by the protection cap 2 for the measuring device of the film forming thickness
Opening 21 be passed through, on pedestal 1 described in face opening 21 crystal-vibration-chip 11 on form a film, occurred by measuring the crystal-vibration-chip 11
Vibration frequency under piezoelectric effect obtains this film forming thickness；As membrane formation times increase, the thickness of the film on crystal-vibration-chip 11
Increasing, the vibration frequency of the crystal-vibration-chip 11 decays, when the vibration frequency of the crystal-vibration-chip 11 is lower than preset threshold value,
The laser source irradiates the film deposited on the crystal-vibration-chip 11 by transmitting laser, realizes to depositing on the crystal-vibration-chip 11
Film heated, be evaporated the film on the crystal-vibration-chip 11, so that the crystal-vibration-chip 11 can be thrown again
Enter to use.The measuring device 100 of above-mentioned film forming thickness directly removes the film on crystal-vibration-chip 11 by its internal heat source 3, exempts from
It goes to carry out demolition and maintenance to crystal-vibration-chip 11, improves production efficiency and saved maintenance cost.
Wherein, the launch wavelength of the laser source is adjustable, and the energy needed for being evaporated according to different filmogens carries out
Adjustment.As other embodiments, the heat source 3 can be other radiant heating devices such as infrared lamp, can equally pass through irradiation
The film deposited on the crystal-vibration-chip 11 realizes that orientation heats the film deposited on the crystal-vibration-chip 11.The heat source 3
The pedestal 1 can also be independently disposed to for the resistance type heaters parts such as heating wire, the heating wire backwards to the crystal-vibration-chip 11
Side, heat the region that there is the crystal-vibration-chip 11 of film where go the pedestal 1, pass sequentially through the pedestal 1 and described
Crystal-vibration-chip 11 transfers thermal energy to the film.
Further, it is provided with multiple crystal-vibration-chips 11 on the pedestal 1, the opening 21 is corresponded on the pedestal 1
Region be limited to film forming area 10a, the pedestal 1 can relatively move with the protection cap 2, different crystal-vibration-chips 11 is switched
In the extremely film forming area 10a, make to deposit on the crystal-vibration-chip 11 being moved in film forming area 10a from the filmogen that opening 21 is passed through
Film forming.
In the present embodiment, multiple crystal-vibration-chips 11 are arranged on the pedestal 1 in circular ring shape, the pedestal 1 and institute
State protection cap 2 can relative rotation, different crystal-vibration-chips 11 is switched in the film forming area 10a.Pass through the pedestal 1 and institute
The mode for stating 2 relative rotation of protection cap switches crystal-vibration-chip 11, and shift motion is smaller, is advantageously implemented quickly cutting for crystal-vibration-chip 11
It changes.Illustratively, the protection cap 2 is kept fixed, and rotary shaft R, the rotary shaft of the pedestal 1 R are connected on the pedestal 1
In on the straight line at the center at the center and the protection cap 2 for connecting the pedestal 1, the rotary shaft R is configured to line shaft, described
Pedestal 1 carries out the rotation relative to the protection cap 2 under the drive of the rotary shaft R, around the rotary shaft R.With the seat
Rotation of the body 1 relative to the protection cap 2, the crystal-vibration-chip 11 positioned at film forming area 10a are successively switched.When next crystal-vibration-chip 11
Into the film forming area 10a, when carrying out the measurement of film forming thickness next time, previous crystal-vibration-chip 11 leaves the film forming area
10a, the heat source 3 heat the crystal-vibration-chip 11, evaporate film disposed thereon, restore the vibration frequency of the crystal-vibration-chip 11 just
Often, the rotation with the pedestal 1 relative to the protection cap 2, the crystal-vibration-chip 11 can be switched to film forming area 10a again again
To carry out the measurement of film forming thickness.
Generally, after one-pass film-forming, the vibration frequency of the crystal-vibration-chip 11 should be still higher than preset threshold value, measurement
Sensitivity is still in higher level, but particularly, if during one-pass film-forming, the vibration frequency of the crystal-vibration-chip 11 is just lower than
Preset threshold value can be switched rapidly using above-mentioned set-up mode by the relative rotation of the pedestal 1 and the protection cap 2
Positioned at the crystal-vibration-chip 11 of the film forming area 10a, with the thickness of two 11 conjunction measuring of crystal-vibration-chip secondary film forming.
In the measuring device 100 of above-mentioned film forming thickness, film forming thickness measurement is carried out in the crystal-vibration-chip 11 for being located at film forming area 10a
When, the heat source 3 removal is located at the film on the crystal-vibration-chip 11 other than film forming area 10a, allow crystal-vibration-chip 11 it is described at
Realize recycling automatically or semi-automatically in the measuring device 100 of film thickness, without it is additional increase replacement crystal-vibration-chip 11 or
With the maintenance procedures of the film on external means removal crystal-vibration-chip 11, maintenance cost and time are further saved, is effectively improved
The efficiency of measurement film forming thickness, to improve the mobility of the film-forming apparatus using the measuring device.The mobility
Specific gravity shared by the time for equipment being defined as within the time that can be provided and being occupied to create value, equipment mobility=
(duration of load application-downtime)/duration of load application × 100%.Since the film-forming apparatus comprising the above measuring device can reduce or remit maintenance
And the downtime consumed, therefore the mobility of film-forming apparatus can be improved.
Further, the pedestal 1 defines heat affected zone 10b, and the heat source 3 is fixed on the protection cap 2 towards described
It is oriented heating in the one side of pedestal 1 and to the heat affected zone 10b, when the pedestal 1 is with 2 relative rotation of protection cap,
The crystal-vibration-chip 11 for being deposited with film is moved in the heat affected zone 10b.The heat source 3 need to can only be continued towards described heated
Area 10b is oriented heating, as the pedestal 1 carries out relative rotation with the protection cap 2, into the heat affected zone 10b's
Film on crystal-vibration-chip 11 is heated automatically and removes, and realizes that the efficient circulation of crystal-vibration-chip 11 uses.Certainly, control can also be passed through
The heat source 3 is kept away so that the crystal-vibration-chip 11 that only there is film just heats the crystal-vibration-chip 11 when entering heat affected zone 10b
Exempt to waste thermal energy.Wherein, the shape of the heat affected zone 10b can be limited to, i.e., described heat identical as the shape of the crystal-vibration-chip 11
The region that source 3 is heated covers the crystal-vibration-chip 11 just, can reduce the waste of thermal energy.
Further, multiple crystal-vibration-chips 11 are described to form a film the area 10a's and heat affected zone 10b in rotational symmetry
Position restriction are as follows: when a crystal-vibration-chip 11 is moved in the heat affected zone 10b, there are another crystal-vibration-chip 11 switch to it is described
In film forming area 10a.The i.e. described heat affected zone 10b should be selected according to the position of the crystal-vibration-chip 11, when there is next crystalline substance
Vibration piece 11 instead of previous crystal-vibration-chip 11 be switched to film forming area 10a formed a film when, there are the entrance of at least one crystal-vibration-chip 11
The heat affected zone 10b is removed while realizing 11 film forming of crystal-vibration-chip for being located at film forming area 10a positioned at heat affected zone 10b's
Film on crystal-vibration-chip 11, to improve measurement efficiency.
To prevent the heat of the sending of heat source 3 from influencing to be located at the film forming on the crystal-vibration-chip of the film forming area 10a, accidentally removing should
Film on crystal-vibration-chip 11, influences the measurement result of film forming thickness, and the heat affected zone 10b should be as far away from the film forming area
10a, in this embodiment, the film forming area 10a and heat affected zone 10b are located at what the arrangement of the multiple crystal-vibration-chip 11 was formed
Circular ring shape it is same diametrically, and the film forming area 10a and heat affected zone 10b is located at the both ends of the diameter.Similarly
Ground, each crystal-vibration-chip 11 can be configured by the edge of the neighbouring pedestal 1, to further increase the heat affected zone
10b is at a distance from the film forming area 10a.
Illustratively, the measuring device 100 of the film forming thickness further includes control unit, and described control unit is for receiving
Whether the film forming thickness that the crystal-vibration-chip 11 obtains, be less than preset threshold according to the film forming thickness measured, control the pedestal 1 with
Whether the protection cap 2 makes a relative move.If the film forming thickness is greater than or equal to preset threshold, described control unit control
The pedestal 1 is relatively moved with the protection cap 2, to switch the crystal-vibration-chip 11 for being located at film forming area 10a, if the film forming thickness is small
It in preset threshold, does not then control, to form a film next time after, repeats the above steps.Described control unit realizes basis
Whether the film thickness that preset threshold judgement is currently located on the crystal-vibration-chip 11 of film forming area 10a is excessive and can not continue on for forming a film
The measurement of thickness is automatically performed the switching of crystal-vibration-chip 11.
Embodiment 2
(in Fig. 2, arrow A represents filmogen, the thermal energy that represented by arrow B heat source 3 issues) as shown in Figure 2, the present embodiment
The measuring device 100 of another film forming thickness is provided, the structure of the measuring device 100 in the present embodiment can refer to embodiment
Content shown in 1, unlike the first embodiment, in the present embodiment, multiple crystal-vibration-chips 11 are arranged side by side in the pedestal
On 1, in the orientation of the multiple crystal-vibration-chip 11, the pedestal 1 can be moved back and forth with the protection cap 2, will be different
Crystal-vibration-chip 11 switch in the film forming area 10a.
Further, the pedestal 1 defines heat affected zone 10b, and the heat source 3 is fixed on the protection cap 2 towards described
It is oriented heating in the one side of pedestal 1 and to the heat affected zone 10b, when the pedestal 1 is moved back and forth with the protection cap 2,
The crystal-vibration-chip 11 for being deposited with film is moved in the heat affected zone 10b, wherein along the relatively described protection cap 2 of the pedestal 1
On moving direction, the heat affected zone 10b is located at the rear of the film forming area 10a.Specifically, when the pedestal 1 is to the guarantor
When protecting cover 2 is moved to the one end in path and is moved backward, can by rotating the modes such as the pedestal 1 or protection cap 2,
Exchange the position of film forming the area 10a and the heat affected zone 10b, it is ensured that after the heat affected zone 10b is located at the film forming area 10a
Side, so that crystal-vibration-chip 11 just enters in the heat affected zone 10b after film forming and when needing to switch.
Specifically, in the present embodiment, the top of the pedestal 1 is provided with the orientation along the multiple crystal-vibration-chip 11
The guide rail extended, the protection cap 2 carry out the round-trip of the relatively described pedestal 1 on the guide rail.Wherein, the seat
Body 1 is kept fixed in the mobile period of the protection cap 2, and the protection cap 2 is first from the first end on the guide rail to second end
It is mobile, until each crystal-vibration-chip 11 is successively by film forming area 10a and heat affected zone 10b, complete the film forming of corresponding number
Thickness measure and heating membrane removal, the protection cap 2 stop movement；Then the pedestal 1 is rotated, and exchanges the film forming area
Behind the position of 10a and the heat affected zone 10b, the pedestal 1 is kept fixed again, and the protection cap 2 is from the on the guide rail
Two ends are mobile to first end, until each crystal-vibration-chip 11 is successively by film forming area 10a and heat affected zone 10b, completion phase
The film forming thickness of number is answered to measure and heat membrane removal, the protection cap 2 stops movement, and the pedestal 1 is rotated again, again
The position for exchanging film forming the area 10a and the heat affected zone 10b, repeats the above process.
In the present embodiment, the distance between two neighboring described crystal-vibration-chip 11 is equal, similarly, the film forming area 10a
With the position restriction of the heat affected zone 10b are as follows: when a crystal-vibration-chip 11 is moved in the heat affected zone 10b, there are another
Crystal-vibration-chip 11 switches in the film forming area 10a.
Embodiment 3
(in Fig. 3, arrow A represents filmogen) as shown in Figure 3, the present invention also provides a kind of film-forming apparatus, including at
Membrane cavity room 200 is respectively arranged at the filmogen source 201 to form a film in chamber 200 and as described in embodiment 1 or embodiment 2
Film forming thickness measuring device 100, the measuring device 100 of the film forming thickness obtains from the filmogen source 201 is synchronous
Filmogen.
The measuring device 100 and film-forming apparatus of above-mentioned film forming thickness provided in this embodiment can be, but not limited to apply
In OLED vacuum film formation technique.
When the film-forming apparatus is applied to OLED vacuum film formation, the substrate 202 for needing plated film is first placed in the film forming chamber
In room 200, heating evaporates filmogen, filmogen is respectively in 202 He of substrate loaded on the filmogen source 201 in crucible
It forms a film on the film forming area 10a of the measuring device 100 of the film forming thickness, is measured by the measuring device 100 of film forming thickness
Film thickness realizes the real time monitoring to film forming thickness and rate of film build on substrate 202, when film forming thickness reaches required thickness
When, stop heating filmogen source, obtains the film forming of specified thickness on a substrate 202.Wherein, the method ginseng of film forming thickness is measured
According to the course of work of the measuring device 100 of above-mentioned film forming thickness, do not repeat herein.
In conclusion the measuring device 100 and film-forming apparatus of film forming thickness provided by the invention, by the film forming
Crystal-vibration-chip 11 in the measuring device 100 of thickness after 3 pairs of heat source film forming of setting heats, and removes the film on crystal-vibration-chip 11,
So that the crystal-vibration-chip 11 can be reused for accurate film forming thickness measurement.The measuring device 100 of the film forming thickness without
Disassembly crystal-vibration-chip 11 removes the maintenance procedures such as the film on crystal-vibration-chip 11 again, has saved maintenance cost, and effectively improve
Film forming efficiency.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of measuring device of film forming thickness characterized by comprising
Pedestal (1) is provided with the crystal-vibration-chip (11) for measuring film forming thickness on the pedestal (1)；
Protection cap (2), the protection cap (2) cover on the pedestal (1), are provided on the protection cap (2) at membrane material
Material deposits the opening (21) of film forming on the crystal-vibration-chip (11)；
Heat source (3), the heat source (3) make it be evaporated removal for heating the film deposited on the crystal-vibration-chip (11).
2. the measuring device of film forming thickness according to claim 1, which is characterized in that be provided on the pedestal (1) more
A crystal-vibration-chip (11), the region that the opening (21) is corresponded on the pedestal (1) are limited to film forming area (10a), the seat
Body (1) can be relatively moved with the protection cap (2), and different crystal-vibration-chips (11) is switched in the film forming area (10a).
3. the measuring device of film forming thickness according to claim 2, which is characterized in that multiple crystal-vibration-chips (11) are in circle
Annular arrangement on the pedestal (1), the pedestal (1) and the protection cap (2) can relative rotation, by different crystal-vibration-chips
(11) it switches in the film forming area (10a).
4. the measuring device of film forming thickness according to claim 3, which is characterized in that the pedestal (1) defines heated
Area (10b), the heat source (3) are fixed on the protection cap (2) towards in the one side of the pedestal (1) and to the heat affected zone
When (10b) is oriented heating, the pedestal (1) and the protection cap (2) relative rotation, the crystal-vibration-chip of film will be deposited with
(11) it is moved in the heat affected zone (10b).
5. the measuring device of film forming thickness according to claim 4, which is characterized in that multiple crystal-vibration-chips (11) are in rotation
Turn symmetrical, the position restriction of film forming area (10a) and the heat affected zone (10b) are as follows: when a crystal-vibration-chip (11) is moved to institute
When stating in heat affected zone (10b), there are another crystal-vibration-chips (11) to switch in the film forming area (10a).
6. the measuring device of film forming thickness according to claim 3, which is characterized in that the film forming area (10a) with it is described
Heat affected zone (10b) be located at the circular ring shape that the multiple crystal-vibration-chip (11) arrangement is formed it is same diametrically, and the film forming area
(10a) and the heat affected zone (10b) is located at the both ends of the diameter.
7. the measuring device of film forming thickness according to claim 2, which is characterized in that multiple crystal-vibration-chips (11) are side by side
It is set on the pedestal (1), in the orientation of the multiple crystal-vibration-chip (11), the pedestal (1) and the protection cap
(2) it can move back and forth, different crystal-vibration-chips (11) is switched in the film forming area (10a).
8. the measuring device of film forming thickness according to claim 7, which is characterized in that the pedestal (1) defines heated
Area (10b), the heat source (3) are fixed on the protection cap (2) towards in the one side of the pedestal (1) and to the heat affected zone
(10b), which is oriented heating, will be deposited with the crystal-vibration-chip of film when the pedestal (1) and the protection cap (2) move back and forth
(11) it is moved in the heat affected zone (10b), wherein along the moving direction of the relatively described protection cap (2) of the pedestal (1),
The heat affected zone (10b) is located at the rear of film forming area (10a).
9. the measuring device of film forming thickness according to claim 8, which is characterized in that the two neighboring crystal-vibration-chip (11)
The distance between it is equal, it is described film forming area (10a) and the heat affected zone (10b) position restriction are as follows: when a crystal-vibration-chip (11)
When being moved in the heat affected zone (10b), there are another crystal-vibration-chips (11) to switch in the film forming area (10a).
10. a kind of film-forming apparatus, which is characterized in that including film forming chamber (200), be respectively arranged at the film forming chamber (200)
The measuring device (100) in interior filmogen source (201) and the film forming thickness as described in claim 1-9 is any, the film forming
The measuring device (100) of thickness is from the synchronous acquisition filmogen of the filmogen source (201) and measures film forming thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810786259.1A CN108950511A (en) | 2018-07-17 | 2018-07-17 | The measuring device and film-forming apparatus of film forming thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810786259.1A CN108950511A (en) | 2018-07-17 | 2018-07-17 | The measuring device and film-forming apparatus of film forming thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108950511A true CN108950511A (en) | 2018-12-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109468608A (en) * | 2018-12-25 | 2019-03-15 | 苏州方昇光电股份有限公司 | Linear evaporated device and its vapor deposition source control method |
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| JP2014070969A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Rate sensor, linear source and vapor deposition device |
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| JPS58223009A (en) * | 1982-06-18 | 1983-12-24 | Nippon Soken Inc | Crystal oscillation type film thickness monitor |
| JP2009149919A (en) * | 2007-12-18 | 2009-07-09 | Nippon Seiki Co Ltd | Film thickness monitoring device and vapor deposition apparatus having the same |
| JP2012169168A (en) * | 2011-02-15 | 2012-09-06 | Hitachi High-Technologies Corp | Crystal oscillation-type film thickness monitoring device and evaporation source device and thin film deposition system of el material using the same |
| JP2014070969A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Rate sensor, linear source and vapor deposition device |
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| CN109468608A (en) * | 2018-12-25 | 2019-03-15 | 苏州方昇光电股份有限公司 | Linear evaporated device and its vapor deposition source control method |
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