CN108956710B - Preparation method of latticed ZnO spiral type porous hollow nanowire sensor - Google Patents
Preparation method of latticed ZnO spiral type porous hollow nanowire sensor Download PDFInfo
- Publication number
- CN108956710B CN108956710B CN201810558838.0A CN201810558838A CN108956710B CN 108956710 B CN108956710 B CN 108956710B CN 201810558838 A CN201810558838 A CN 201810558838A CN 108956710 B CN108956710 B CN 108956710B
- Authority
- CN
- China
- Prior art keywords
- pvp
- latticed
- zno
- porous hollow
- spiral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 23
- 238000009987 spinning Methods 0.000 claims abstract description 22
- 238000010041 electrostatic spinning Methods 0.000 claims abstract description 10
- 239000000835 fiber Substances 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000001354 calcination Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 5
- 239000011707 mineral Substances 0.000 claims description 5
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical compound [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Inorganic materials [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 38
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 38
- 229910017053 inorganic salt Inorganic materials 0.000 description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a preparation method of a latticed ZnO spiral type porous hollow nanowire sensor, which takes spinning solution as a raw material, firstly uses electrostatic spinning on ITO conductive glass to prepare a precursor, then transfers the precursor to a resistance furnace to be calcined to obtain the latticed ZnO spiral type porous hollow nanowire, then coats Ag or Au electrodes or conductive adhesive on the periphery of the latticed ZnO spiral type porous hollow nanowire, and leads out wires, thus obtaining the gas-sensitive sensor with a finished structure.
Description
Technical Field
The invention belongs to the technical field of sensor preparation, and mainly relates to a preparation method of a latticed ZnO spiral type porous hollow nanowire sensor.
Background
The sensor is a very important field in the current scientific development, and can play a positive role in the fields of intelligent home, safe production, environmental protection, national defense and the like. Therefore, high performance sensors have been the subject of efforts by researchers. Si has the advantages of mature preparation process, low cost, large size and the like, so that the Si-based sensor is widely concerned by people. In order to realize Si-based sensors, people generally etch a high-quality Si substrate to obtain a Si nano-array on the Si substrate, and then add an Au electrode and lead out an Au wire to form a complete sensor structure.
However, the minimum detection limit of Si nanoarray sensors is typically 100ppm, far inferior to other semiconductor sensors (5-10 ppm). In addition, its response time is generally 30-50s, i.e., its sensitivity needs to be further improved. In addition to Si-based sensors, ZnO-based sensors have also received attention. ZnO has the advantages of excellent electrical and optical properties, no toxicity, rich raw materials, relatively simple preparation process and the like, thereby being widely applied in the field of semiconductor devices.
At present, the minimum detection limit of the Au/ZnO nano-column array sensor is generally 10ppm, which is superior to that of a Si nano-array sensor. However, the disadvantages of the prior art are:
the preparation process of the ZnO nano-column/nano-wire is complex and has high cost;
2. the electric signal transmission path of the vertically distributed ZnO nano column/nano wire is longer, and the response time of the sensor is longer.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a preparation method of a latticed ZnO spiral type porous hollow nanowire sensor.
The technical scheme adopted by the invention is as follows: a preparation method of a latticed ZnO spiral type porous hollow nanowire sensor comprises the following steps:
A. preparing precursor fiber:
preparing an inorganic substance/PVP spinning solution, and carrying out electrostatic spinning to prepare a latticed spiral inorganic substance/PVP precursor fiber; the mineral/PVP spinning solution is Zn (NO)3)2·4H2O、Zn(CH2COO)2·4H2O、Al(NO3)3·6H2A mixed solution of O and PVP;
B. preparing the nano wire:
calcining the latticed spiral inorganic matter/PVP precursor fiber to obtain latticed Al-doped ZnO spiral porous hollow nanowires;
C. preparing a sensor:
and coating a conductive electrode on the periphery of the latticed Al-doped ZnO spiral porous hollow nanowire, and leading out a lead to obtain the latticed ZnO spiral porous hollow nanowire sensor.
Preferably, the preparation method of the inorganic substance/PVP spinning solution comprises the following steps: adding Zn (NO)3)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2Mixing O to obtain an inorganic substance; dissolving inorganic matter in deionized water, adding polyethylene PVP, stirring for 30-90min, and standing to obtain inorganic matter/PVP spinning solution.
Preferably, Zn (NO)3)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2The mass ratio of O is 1:0.5-3: 0.01-0.05.
Preferably, the inorganic/PVP spinning solution has a PVP concentration of 40-50 wt% and an inorganic concentration of 8-15 wt%. More preferably, the PVP concentration is 46 wt% and the mineral concentration is 10 wt%.
Preferably, the molecular weight of PVP is 2000-50000.
Preferably, the grid of the grid-shaped spiral inorganic substance/PVP precursor fiber is square, and the side length of the grid-shaped spiral inorganic substance/PVP precursor fiber is 400-2500 nm.
Preferably, in step B, the calcination process is controlled under the following conditions: the heating rate is 1-5 ℃/min, the temperature is increased to 600-900 ℃, and the calcination is carried out for 8-16 hours.
Preferably, the electrode is an Ag electrode, an Au electrode, or a conductive paste.
Preferably, the sensor is a gas sensor.
More specifically, the preparation method of the latticed ZnO spiral type porous hollow nanowire sensor comprises the following specific steps:
(1) zn (NO) with the mass ratio of 1:0.5-3:0.0153)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2O, uniformly mixing, dissolving in deionized water, weighing a certain amount of polyvinyl pyrrolidone (PVP (K40)), stirring at room temperature for 30-120min, and standing to obtain a spinning solution, wherein the PVP content in the spinning solution is 46 wt%, and the inorganic salt content is 10 wt%;
(2) preparing a latticed spiral inorganic substance/PVP precursor fiber on ITO conductive glass by adopting electrostatic spinning, wherein the grid is square, and the side length is 400-2500 nm;
(3) transferring the precursor fiber to a box-type resistance furnace, then heating to 900 ℃ at the heating rate of 1-5 ℃/min, and calcining for 8-16 hours to obtain the latticed ZnO spiral porous hollow nanowire;
(4) and coating Ag or Au electrodes or conductive adhesive on the periphery of the latticed ZnO spiral porous hollow nanowires, and leading out a lead to obtain the gas sensor with the finished structure.
The invention has the following beneficial effects: (1) the ZnO nanowire is prepared by electrostatic spinning, so that the controllability is good, and the process complexity and the production cost are favorably reduced; (2) the ZnO nanowires are changed into planar distribution, so that the propagation path of signals is shortened, and the sensitivity of device response is improved.
Drawings
Fig. 1 is a schematic diagram of a latticed Al-doped ZnO porous spiral nanowire gas sensor, wherein 11 is an ITO substrate, 12 is a latticed Al-doped ZnO porous spiral nanowire, and 13 is an electrode.
Detailed Description
For better explanation of the present invention, the following specific examples are further illustrated, but the present invention is not limited to the specific examples.
Example 1
Zn (NO) with the mass ratio of 1:0.5:0.013)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2O, uniformly mixing, dissolving in deionized water, weighing a certain amount of polyvinylpyrrolidone (PVP (K40)) with the molecular weight of 2000, stirring for 30min at room temperature, and standing to obtain a spinning solution, wherein the concentration of PVP in the spinning solution is 40 wt%, and the concentration of inorganic salt is 10 wt%;
preparing a latticed spiral inorganic substance/PVP precursor fiber on ITO conductive glass by using electrostatic spinning, wherein a grid is square and the side length is 1000 nm;
transferring the precursor fiber to a box-type resistance furnace, then heating to 600 ℃ at the heating rate of 1 ℃/min, and calcining for 8 hours to obtain the latticed ZnO spiral porous hollow nanowire;
and coating an Au conducting electrode on the periphery of the latticed ZnO spiral porous hollow nanowire, and leading out a conducting wire to obtain the gas sensor.
The structure of the resulting gas sensor is shown in FIG. 1.
Example 2
Zn (NO) with the mass ratio of 1:1:0.0153)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2O, uniformly mixing, dissolving in deionized water, weighing a certain amount of polyvinylpyrrolidone (PVP (K40)) with the molecular weight of 30000, stirring at room temperature for 60min, and standing to obtain a spinning solution, wherein the concentration of PVP in the spinning solution is 45 wt%, and the concentration of inorganic salt is 10 wt%;
preparing a latticed spiral inorganic substance/PVP precursor fiber on ITO conductive glass by using electrostatic spinning, wherein a grid is square and the side length is 1000 nm;
transferring the precursor fiber to a box-type resistance furnace, then heating to 600 ℃ at the heating rate of 1 ℃/min, and calcining for 8 hours to obtain the latticed ZnO spiral porous hollow nanowire;
and coating an Au conducting electrode on the periphery of the latticed ZnO spiral porous hollow nanowire, and leading out a conducting wire to obtain the gas sensor.
Example 3
Zn (NO) with the mass ratio of 1:2:0.023)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2O, uniformly mixing, dissolving in deionized water, weighing a certain amount of polyvinylpyrrolidone (PVP (K40)) with the molecular weight of 50000, stirring for 90min at room temperature, and standing to obtain a spinning solution, wherein the concentration of PVP in the spinning solution is 50 wt%, and the concentration of inorganic salt is 10 wt%;
preparing a latticed spiral inorganic substance/PVP precursor fiber on ITO conductive glass by using electrostatic spinning, wherein a grid is square and the side length is 1000 nm;
transferring the precursor fiber to a box-type resistance furnace, then heating to 600 ℃ at the heating rate of 1 ℃/min, and calcining for 8 hours to obtain the latticed ZnO spiral porous hollow nanowire;
and coating an Au conducting electrode on the periphery of the latticed ZnO spiral porous hollow nanowire, and leading out a conducting wire to obtain the gas sensor.
Example 4
Zn (NO) with the mass ratio of 1:2.5:0.033)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2O, uniformly mixing, dissolving in deionized water, weighing a certain amount of polyvinylpyrrolidone (PVP (K40)) with the molecular weight of 30000, stirring at room temperature for 60min, and standing to obtain a spinning solution, wherein the concentration of PVP in the spinning solution is 45 wt%, and the concentration of inorganic salt is 10 wt%;
preparing a latticed spiral inorganic substance/PVP precursor fiber on ITO conductive glass by using electrostatic spinning, wherein a grid is square and the side length is 1000 nm;
transferring the precursor fiber to a box-type resistance furnace, then heating to 750 ℃ at a heating rate of 3 ℃/min, and calcining for 12 hours to obtain the latticed ZnO spiral porous hollow nanowire;
and coating an Au conducting electrode on the periphery of the latticed ZnO spiral porous hollow nanowire, and leading out a conducting wire to obtain the gas sensor.
Example 5
Zn (NO) with the mass ratio of 1:3:0.053)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2O, uniformly mixing, dissolving in deionized water, weighing a certain amount of polyvinylpyrrolidone (PVP (K40)) with the molecular weight of 3, stirring at room temperature for 60min, and standing to obtain a spinning solution, wherein the concentration of PVP in the spinning solution is 45 wt%, and the concentration of inorganic salt is 10 wt%;
preparing a latticed spiral inorganic substance/PVP precursor fiber on ITO conductive glass by using electrostatic spinning, wherein a grid is square and the side length is 1000 nm;
transferring the precursor fiber to a box-type resistance furnace, then heating to 900 ℃ at the heating rate of 5 ℃/min, and calcining for 16 hours to obtain the latticed ZnO spiral porous hollow nanowire;
and coating an Au conducting electrode on the periphery of the latticed ZnO spiral porous hollow nanowire, and leading out a conducting wire to obtain the gas sensor.
Claims (8)
1. A preparation method of a latticed ZnO spiral type porous hollow nanowire sensor is characterized by comprising the following steps:
A. preparing precursor fiber:
preparing an inorganic substance/PVP spinning solution, and carrying out electrostatic spinning to prepare a latticed spiral inorganic substance/PVP precursor fiber; the mineral/PVP spinning solution is Zn (NO)3)2·4H2O、Zn(CH2COO)2·4H2O、Al(NO3)3·6H2A mixed solution of O and PVP;
B. preparing the nano wire:
calcining the latticed spiral inorganic matter/PVP precursor fiber to obtain latticed Al-doped ZnO spiral porous hollow nanowires;
C. preparing a sensor:
coating a conductive electrode on the periphery of the latticed Al-doped ZnO spiral type porous hollow nanowire, and leading out a lead to obtain a latticed ZnO spiral type porous hollow nanowire sensor;
Zn(NO3)2·4H2O、Zn(CH2COO)2·4H2o and Al (NO)3)3·6H2The mass ratio of O is 1:0.5-3: 0.01-0.05.
2. The method of claim 1, wherein the mineral/PVP dope is prepared by: adding Zn (NO)3)2·4H2O、Zn(CH2COO)2·4H2O and Al (NO)3)3·6H2Mixing O to obtain an inorganic substance; dissolving inorganic matter in deionized water, adding PVP, stirring for 30-90min, and standing to obtain inorganic matter/PVP spinning solution.
3. The method according to claim 2, wherein the inorganic/PVP spinning solution contains PVP in a concentration of 40-50 wt% and inorganic in a concentration of 8-15 wt%.
4. The method according to claim 2, wherein the molecular weight of PVP is 2000-50000.
5. The method as claimed in claim 1, wherein the lattice of the lattice-like helical mineral/PVP precursor fiber is square with side length of 400-2500 nm.
6. The preparation method according to claim 1, wherein in the step B, the calcination process is controlled under the following conditions: the heating rate is 1-5 ℃/min, the temperature is increased to 600-900 ℃, and the calcination is carried out for 8-16 hours.
7. The method according to claim 1, wherein the electrode is an Ag electrode, an Au electrode, or a conductive paste.
8. The method of claim 1, wherein the sensor is a gas sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810558838.0A CN108956710B (en) | 2018-06-01 | 2018-06-01 | Preparation method of latticed ZnO spiral type porous hollow nanowire sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810558838.0A CN108956710B (en) | 2018-06-01 | 2018-06-01 | Preparation method of latticed ZnO spiral type porous hollow nanowire sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108956710A CN108956710A (en) | 2018-12-07 |
| CN108956710B true CN108956710B (en) | 2020-12-01 |
Family
ID=64492923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810558838.0A Active CN108956710B (en) | 2018-06-01 | 2018-06-01 | Preparation method of latticed ZnO spiral type porous hollow nanowire sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108956710B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101091111A (en) * | 2005-12-23 | 2007-12-19 | 韩国科学技术研究院 | Ultra-sensitive metal oxide gas sensor and fabrication method thereof |
| CN102279210A (en) * | 2011-07-29 | 2011-12-14 | 吉林大学 | Double-sensitive-layer gas sensor based on nano fiber and particle adhesion layer and preparation method of double-sensitive-layer gas sensor |
| CN102353324A (en) * | 2011-07-26 | 2012-02-15 | 华中科技大学 | Flexible semi-clarity strain sensor and preparation method thereof |
| CN102507664A (en) * | 2011-11-08 | 2012-06-20 | 浙江大学 | Conductive polymer composite nanofiber resistive-type humidity sensor and preparation method thereof |
| CN102645454A (en) * | 2012-03-30 | 2012-08-22 | 长春理工大学 | Planar-type acetylene gas sensor with nanofiber sensitive layer |
| US9053938B1 (en) * | 2009-10-08 | 2015-06-09 | Aeris Capital Sustainable Ip Ltd. | High light transmission, low sheet resistance layer for photovoltaic devices |
| CN106404847A (en) * | 2016-11-10 | 2017-02-15 | 合肥铭志环境技术有限责任公司 | Silicate mineral fiber/polypyrrole composite gas-sensitive material and preparation method thereof |
| CN106908486A (en) * | 2017-02-23 | 2017-06-30 | 中国石油大学(北京) | A kind of hygrosensor and preparation method thereof |
-
2018
- 2018-06-01 CN CN201810558838.0A patent/CN108956710B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101091111A (en) * | 2005-12-23 | 2007-12-19 | 韩国科学技术研究院 | Ultra-sensitive metal oxide gas sensor and fabrication method thereof |
| US9053938B1 (en) * | 2009-10-08 | 2015-06-09 | Aeris Capital Sustainable Ip Ltd. | High light transmission, low sheet resistance layer for photovoltaic devices |
| CN102353324A (en) * | 2011-07-26 | 2012-02-15 | 华中科技大学 | Flexible semi-clarity strain sensor and preparation method thereof |
| CN102279210A (en) * | 2011-07-29 | 2011-12-14 | 吉林大学 | Double-sensitive-layer gas sensor based on nano fiber and particle adhesion layer and preparation method of double-sensitive-layer gas sensor |
| CN102507664A (en) * | 2011-11-08 | 2012-06-20 | 浙江大学 | Conductive polymer composite nanofiber resistive-type humidity sensor and preparation method thereof |
| CN102645454A (en) * | 2012-03-30 | 2012-08-22 | 长春理工大学 | Planar-type acetylene gas sensor with nanofiber sensitive layer |
| CN106404847A (en) * | 2016-11-10 | 2017-02-15 | 合肥铭志环境技术有限责任公司 | Silicate mineral fiber/polypyrrole composite gas-sensitive material and preparation method thereof |
| CN106908486A (en) * | 2017-02-23 | 2017-06-30 | 中国石油大学(北京) | A kind of hygrosensor and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| AZO纳米纤维的电纺丝法制备工艺研究;常溪;《中国优秀硕士学位论文全文数据库 工程科技I辑》;20141215(第12期);第1-53页 * |
| Fabrication and characterization of ZnO nanofibers by electrospinning;Jin-Ah Park等;《Current Applied Physics》;20090309(第9期);第S210-S212页 * |
| 电纺氧化锌纳米纤维乙醇、丙酮气敏传感器;郑高峰等;《光学精密工程》;20140630;第22卷(第6期);第1555-1560页第1-4节，附图1-2 * |
| 静电纺丝法制备铝掺杂ZnO纳米纤维的研究;宋朱晓等;《纺织高校基础科学学报》;20100930;第23卷(第3期);第345-347、363页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108956710A (en) | 2018-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101498157B1 (en) | ZnO-SnO2 nanofiber-nanowire stem-branch heterostructure material and preparation method thereof and gas sensor containing the material | |
| CN106896142A (en) | Acetone sensor, the preparation method and applications of the Ce doped In_2O_3 nano sensitive materials based on graded structure | |
| CN104569052B (en) | Method for preparing graphene oxide sensor | |
| CN105136867A (en) | Ethanol sensor based on hollow spherical SnO2/CeO2 heterostructural composite oxide and preparation method thereof | |
| CN103713019B (en) | Nano combined resistance type thin film gas sensor of zinc paste/polypyrrole and preparation method thereof | |
| CN107364897A (en) | A kind of preparation method of ferrous acid zinc nano material | |
| CN108579724B (en) | Bismuth vanadate nanotube crystal array growing on transparent conductive substrate in [010] direction and preparation and application thereof | |
| CN103011798A (en) | High-joule type voltage dependent resistor and production method thereof | |
| CN105486724A (en) | NO2 sensor based on precious metal Ag-supported mesoporous WO3 material and preparation method thereof | |
| CN102539487A (en) | Air-sensitive material compounded by titanium dioxide nanometer lines and stannic oxide nanometer particles and preparation method thereof | |
| CN110082406A (en) | One kind being based on SnO2-Co3O4The dimethylbenzene gas sensor and preparation method thereof of hetero-junctions nanostructure sensitive material | |
| CN105548270B (en) | A kind of toluene gas sensor and preparation method thereof based on α-Fe2O3/SnO2 heterogeneous structural nano linear arrays | |
| CN104258850A (en) | Ag-doped TiO2 nano thin film and composite material containing thin film | |
| CN109119511A (en) | A kind of preparation method of tin oxide-nanometic zinc oxide rod array heterojunction structure ultraviolet light detector | |
| CN108956710B (en) | Preparation method of latticed ZnO spiral type porous hollow nanowire sensor | |
| CN109115839B (en) | In-tube growth doped or filled mesoporous polyaniline gas sensor and preparation method thereof | |
| CN109671846B (en) | Perovskite solar cell with three-dimensional structure graphene as back electrode and preparation thereof | |
| CN108828021A (en) | Based on branching SnO2The alcohol gas sensor and preparation method thereof of/ZnO heterojunction structure sensitive material | |
| CN103570055B (en) | Preparation method of pyramid zinc oxide nanowire array | |
| CN106449984B (en) | A kind of stable large area perovskite solar cell and preparation method thereof | |
| CN107884446B (en) | Ethanol gas sensor based on multi-element metal oxide sensitive material | |
| CN113758562A (en) | Wide spectrum detector based on copper selenide nanotube or copper selenide/bismuth sulfide nanotube composite material and preparation method thereof | |
| CN108956713B (en) | ZnO/carbon nanowire sensitive material with horizontally distributed propagation paths, preparation method thereof and high-sensitivity sensor | |
| CN112707433A (en) | Preparation method of rare earth cerium doped gallium oxide nano material | |
| CN108152337B (en) | LaFeO with high gas-sensitive performance3Ethanol-based gas sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240618 Address after: Room 1011-A214, 10th Floor, Shuangying Building, No. 777 Yulan Avenue, High tech Zone, Hefei City, Anhui Province, China (Anhui) Pilot Free Trade Zone, 230000 Patentee after: Anhui InterContinental Intellectual Property Co.,Ltd. Country or region after: China Address before: No.22, Dongcheng village, Pengjiang district, Jiangmen City, Guangdong Province Patentee before: WUYI University Country or region before: China |
|
| TR01 | Transfer of patent right |