CN108821264B - Nano-scale sound wave generator - Google Patents
Nano-scale sound wave generator Download PDFInfo
- Publication number
- CN108821264B CN108821264B CN201810753802.8A CN201810753802A CN108821264B CN 108821264 B CN108821264 B CN 108821264B CN 201810753802 A CN201810753802 A CN 201810753802A CN 108821264 B CN108821264 B CN 108821264B
- Authority
- CN
- China
- Prior art keywords
- film
- graphene
- graphene film
- sound wave
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 216
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 203
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000004132 cross linking Methods 0.000 claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000084 colloidal system Substances 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 239000007787 solid Substances 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000002082 metal nanoparticle Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 238000000967 suction filtration Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 claims description 3
- 241000723346 Cinnamomum camphora Species 0.000 claims description 3
- 229960000846 camphor Drugs 0.000 claims description 3
- 229930008380 camphor Natural products 0.000 claims description 3
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005660 chlorination reaction Methods 0.000 claims description 2
- 229920000307 polymer substrate Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005485 electric heating Methods 0.000 abstract description 2
- 230000035939 shock Effects 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- -1 meanwhile Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 150000001805 chlorine compounds Chemical class 0.000 description 5
- 238000002003 electron diffraction Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 description 1
- LUTSRLYCMSCGCS-BWOMAWGNSA-N [(3s,8r,9s,10r,13s)-10,13-dimethyl-17-oxo-1,2,3,4,7,8,9,11,12,16-decahydrocyclopenta[a]phenanthren-3-yl] acetate Chemical compound C([C@@H]12)C[C@]3(C)C(=O)CC=C3[C@@H]1CC=C1[C@]2(C)CC[C@H](OC(=O)C)C1 LUTSRLYCMSCGCS-BWOMAWGNSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a nanoscale sound wave generator which comprises a substrate with the thermal conductivity lower than 200W/mK, a sound wave generating film paved on the substrate, two silver colloid electrodes for audio current input and an electric signal input unit, wherein the two silver colloid electrodes are respectively arranged at two ends of the sound wave generating film; the sound wave generating film is a graphene film, the thickness of the sound wave generating film is not more than 60nm, and the density of the sound wave generating film is 2.0-2.2 g/cm3The graphene layers are crosslinked, the degree of crosslinking is 1-5%, and the graphene film has excellent electric heating performance and thermal conductivity and can effectively cause thermal shock of air at the position of the film. The sound production device has good sound quality and high sound definition.
Description
Technical Field
The invention relates to a high-performance nano material and a preparation method thereof, in particular to a nano sound wave generator.
Background
In 2010, Andre GeiM and Konstantin Novoselov, two professors of Manchester university in England, raised the worldwide hot trend of graphene research because of the first successful separation of stable graphene to obtain the Nobel prize of physics. Graphene has excellent electrical properties (the electron mobility can reach 2 multiplied by 105cM2/Vs at room temperature), outstanding properties (5000W/(MK), extraordinary specific surface area (2630M2/g), Young modulus (1100GPa) and breaking strength (125GPa), excellent electric conduction and heat conduction properties of graphene completely exceed metal, meanwhile, graphene has the advantages of high temperature resistance and corrosion resistance, and good mechanical properties and lower density of graphene enable the graphene to have the potential of replacing metal in the field of electric heating materials. The portable electronic device can be widely applied to portable electronic devices such as sound production, sound wave detection, smart phones, intelligent portable hardware, tablet computers and notebook computers.
However, due to the existence of edge defects and the weak interaction force between graphene layers, the strength of the graphene film sintered at high temperature is generally not too high, less than 100MPa, which is not favorable for practical application. In addition, the cross-linked structure between graphene layers is similar to that of a diamond structure, so that heat conduction is not damaged, and the heat conduction performance of the graphene film is not seriously influenced.
To date, graphene films have begun to be applied to sound-producing devices, such as laser-produced PI-based graphene films, chemically reduced graphene films. However, the films of the two have inevitable defects, namely large structural defects and low heating speed; secondly, the thickness is very high, the cooling speed is slow, and therefore the sound production definition is poor; thirdly, the film has poor temperature resistance and poor sound adjustment. To address the above issues, this patent designed a nano-thick crosslinked graphene membrane. The film is applied to sound wave detection and has the following advantages: firstly, the film structure is perfect, the structure and stacking defects are few, the conductivity is high, and the temperature rise speed is high; secondly, the thickness of the film is below 60nm, the heat conductivity is high, and the heat dissipation is fast; the graphene film has high temperature rise and fall rate, so that the graphene film has excellent tone quality and high sound definition. Thirdly, the graphene film has few defects, internal crosslinking, good thermal stability, high temperature resistance of 520 ℃ in the air and good sound volume adjustability; and fourthly, the graphene film has high thermal conductivity and lower sound production voltage.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a nano-scale sound wave generator.
The purpose of the invention is realized by the following technical scheme: a nanometer-scale sound wave generator is characterized by comprising a substrate with the thermal conductivity lower than 200W/mK, a sound wave generating film paved on the substrate, an electric signal input unit and two silver colloid electrodes for audio current input, wherein the two silver colloid electrodes are respectively arranged at two ends of the sound wave generating film; the sound wave generation film is a graphene film, the thickness of the sound wave generation film is not more than 60nm, the density of the sound wave generation film is 2.0-2.2 g/cm3, the graphene layers are crosslinked, the degree of crosslinking is 1-5%, and the graphene film is prepared by the following method:
(1) preparing graphene oxide into a graphene oxide aqueous solution with the concentration of 0.5-10ug/mL, and performing suction filtration to form a film;
(2) putting the graphene oxide film attached to the suction filtration substrate into a closed container, and fumigating at the high temperature of 80-100 ℃ from the bottom to the top for 0.1-1 h;
(3) uniformly coating the melted solid transfer agent on the surface of the reduced graphene oxide film, and slowly cooling at room temperature until the film is separated from the substrate;
(4) heating the reduced graphene oxide film treated in the step 3 to sublimate or volatilize the solid transfer agent;
(5) spraying a layer of metal such as titanium, molybdenum or cobalt on the surface of the chemically reduced graphene film in a magnetron sputtering mode, wherein the molar weight of sputtered metal nanoparticles is not more than 30% of the molar weight of carbon atoms in the graphene film;
(6) chloridizing the graphene film sputtered with the metal at 800-1200 ℃, and dissipating the metal nanoparticles in the form of chloride;
(7) and (3) placing the chlorinated graphene film in a high-temperature furnace, heating to 1500 ℃ at 5-20 ℃ per minute, and then heating to 2000 ℃ at 2-5 ℃ per minute to obtain the interlayer crosslinked graphene film.
Further, the substrate with the thermal conductivity lower than 200W/mK is selected from a polymer substrate and a silicon substrate.
Further, the solid transfer agent is selected from the group consisting of paraffin, naphthalene, arsenic trioxide, camphor, sulfur, norbornene, rosin, and other small molecule solid substances insoluble in water that can sublime or volatilize under certain conditions.
Further, the sublimation temperature of the solid transfer agent is controlled below 320 ℃.
Further, the chlorination treatment means: and (3) placing the graphene film sputtered with the metal nano particles in an environment with the chlorine content of 0.5-10% for heating treatment for 0.1-4 h.
The invention has the beneficial effects that: according to the invention, firstly, an ultrathin graphene film is obtained in a solid transfer mode, so that a foundation is laid for the high resistance of a device; further, the surface wrinkles of the graphene film are increased through slow heating (1 ℃/min), and the area of the graphene film in a unit space is expanded; and then heating at a speed of 10 ℃/min and placing at 2000 ℃ to remove most of atomic defects in the graphene, but not recovering the stacking structure in the graphene. Further sputtering metal particles on the surface of the ultrathin graphene film, and reacting the metal particles with the graphene at high temperature to form metal carbide; then the metal carbide forms metal chloride under the action of chlorine and escapes, meanwhile, the carbon structure is converted to the diamond structure, the strength (reaching 7-20GPa) and the thermal stability of the film are greatly improved, the graphene film structure is recovered to a great extent by high-temperature treatment at 2000 ℃, but the interlayer cross-linking structure is not influenced and an AB accumulation structure is not formed. The invention sacrifices partial electric conduction and heat conduction performance of the graphene film, introduces an interlayer crosslinking structure into the graphene sheet layers, greatly improves the strength of the graphene film, and improves the strength by more than 80 times. The film is applied to sound wave detection and has the following advantages: firstly, the film structure is perfect, the structure and stacking defects are few, the conductivity is high, and the temperature rise speed is high; secondly, the thickness of the film is below 60nm, the heat conductivity is high, and the heat dissipation is fast; the graphene film has high temperature rise and fall rate, so that the graphene film has excellent tone quality and high sound definition. Thirdly, the graphene film has few defects, internal crosslinking, good thermal stability, high temperature resistance of 520 ℃ in the air and good sound volume adjustability; and fourthly, the graphene film has high thermal conductivity and lower sound production voltage.
Drawings
Fig. 1 is a raman spectrum of a non-crosslinked graphene film after treatment at 2000 degrees celsius.
Fig. 2 is a raman spectrum of the cross-linked graphene film after 2000 degrees celsius treatment.
Fig. 3 is a transmission spectrum of a non-crosslinked graphene film at 2000 degrees celsius treatment.
Fig. 4 is a transmission spectrum of a cross-linked graphene film processed at 2000 degrees celsius.
Fig. 5 is a graph of tensile strength testing of a cross-linked graphene film at 2000 degrees celsius treatment.
Fig. 6 is a temperature increase and decrease curve of the graphene film obtained in example 1.
Fig. 7 is a temperature curve of the graphene film along the direction of the straight line where the two electrodes are located at the time T ═ 1 s.
Detailed Description
Example 1:
(1) preparing graphene oxide into a graphene oxide aqueous solution with the concentration of 0.5ug/mL, and performing suction filtration to form a membrane by taking the hydrophilic polytetrafluoroethylene membrane as a substrate.
(2) And (3) putting the graphene oxide membrane attached to the hydrophilic polytetrafluoroethylene membrane in a closed container, and fumigating the graphene oxide membrane from the bottom to the top for 1h at a high temperature of 80 ℃.
(3) And uniformly coating the melted solid transfer agent camphor on the surface of the reduced graphene oxide film by using methods such as evaporation, casting and the like, slowly cooling at room temperature, and separating the film from the substrate.
(4) And slowly volatilizing the solid transfer agent from the obtained graphene film supported by the solid transfer agent at 40 ℃ to obtain the independent self-supported graphene film.
(5) And spraying a layer of metallic titanium on the surface of the chemically reduced graphene film in a magnetron sputtering mode. By controlling the sputtering parameters, the molar weight of the finally sputtered metal nanoparticles is 28.6% of the molar weight of carbon atoms in the graphene film.
(6) The graphene film sputtered with the metal is chlorinated at 1200 degrees celsius, allowing the titanium nanoparticles to escape as chlorides. The method specifically comprises the following steps: and (3) placing the graphene film sputtered with the metal nanoparticles in an environment with the chlorine content of 0.5% for heating treatment for 4 h.
(7) And (3) carrying out 2000-degree high-temperature treatment on the chlorinated graphene film, wherein the temperature rise process in the 2000-degree high-temperature process is as follows: below 1500 ℃ and 20 ℃ per minute; above 1500 ℃, 5 ℃ per minute; graphene films with a thickness of 59nm were obtained.
Comparing FIGS. 1 and 2, the graphene film having a plurality of crosslinked structures has a stronger sp3Carbon bonding Peak (1360 cm)-1) The degree of crosslinking (said degree of crosslinking being sp) as determined by the ID/IG area ratio3Carbon content-mass percentage) was 4.8%; in fig. 3 and 4, the interlayer spacing of the electron diffraction fringes of the graphene film with the crosslinked structure is smaller than that of the normal graphene film. The strength of the prepared graphene film is 7GPa (shown in figure 5), and the thermal stability of the graphene film can be ensured. The density of the graphene film is 2.0g/cm3。
Two electrodes are connected to the left side and the right side of the graphene film, the temperature change of the graphene electrothermal film is measured by using a temperature control sensor, the stable temperature 519 ℃ of the graphene film is achieved only by 0.5 second under the direct current voltage of 10V in the atmospheric environment, and after the graphene film is powered off, the temperature of the graphene film is reduced to be close to the room temperature within 0.5 second due to the excellent thermal conductivity of the graphene film, as shown in figure 6. And (3) acquiring a surface temperature distribution graph of the film by using an infrared detector at the moment T-1 s, wherein the temperature of the graphene film is stable along the direction of the straight line where the two electrodes are located, and the temperature is about 519 ℃.
2 x 2cm of the graphene film2The nano-scale acoustic wave generator is formed by paving the graphene film on a polyimide substrate (with the thermal conductivity of 0.35W/mK), coating silver colloid electrodes at two ends of the graphene film, and respectively connecting the two silver colloid electrodes with the positive electrode and the negative electrode of an electric signal input unit. Because the film has high electrical conductivity, the film can release heat and raise temperature violently under the condition of external voltage, the external voltage is removed, the heat dissipation speed of the film is extremely high due to good thermal conductivity and thin thickness, and the film can quickly raise and lower the temperature under the combined action, so that the thermal shock of the air at the film is caused, and the film can sound. Therefore, a certain air thermal vibration amplitude, namely pitch, can be obtained by auxiliary loading of a direct current voltage of 10V and additionally inputting a specified audio signal through the electric signal input unit to adjust the overall input voltage and change frequency; the thermal vibration frequency of the air can be adjusted by adjusting the frequency of the input signal, so that the frequency of the sounding is changed to send different sounds.
Example 2:
(1) preparing the graphene oxide into a graphene oxide aqueous solution with the concentration of 10ug/mL, and performing suction filtration to form a film by taking the PC film as a substrate.
(2) And (3) putting the graphene oxide film attached to the PC film into a closed container, and fumigating the graphene oxide film at the high temperature of 100 ℃ from the bottom to the top for 0.1 h.
(3) And uniformly coating the melted solid transfer agent naphthalene on the surface of the reduced graphene oxide film by using methods such as evaporation, casting and the like, and slowly cooling at room temperature.
(4) And slowly volatilizing the graphene film supported by the solid transfer agent at 80 ℃ to obtain the independent self-supporting graphene film.
(5) And spraying a layer of metallic titanium on the surface of the chemically reduced graphene film in a magnetron sputtering mode. By controlling the sputtering parameters, the molar weight of the finally sputtered metal nanoparticles is 18.4% of the molar weight of carbon atoms in the graphene film.
(6) The graphene film sputtered with the metal is chlorinated at 800 degrees celsius, so that the titanium nanoparticles escape as chlorides. The method specifically comprises the following steps: and (3) placing the graphene film sputtered with the metal nanoparticles in an environment with the chlorine content of 10% for heating treatment for 0.1 h.
(7) The chlorinated graphene film is subjected to high-temperature treatment at 2000 ℃, and specifically comprises the following steps: below 1500 ℃, 5 ℃ per minute; above 1500 ℃, 2 ℃ per minute; keeping the temperature at 2000 ℃ for 1 h; obtaining the graphene film with the thickness of 48 nm.
Through Raman test, the graphene film with the graphene mold having a plurality of cross-linked structures has stronger sp3Carbon bonding Peak (1360 cm)-1) The degree of crosslinking (said degree of crosslinking being sp) as determined by the ID/IG area ratio3Carbon content-mass percentage) was 1.1%; the interlayer spacing of the electron diffraction fringes of the graphene film with the crosslinked structure is smaller than that of the normal graphene film. The prepared graphene film has the strength of 7.6GPa and the density of 2.0g/cm3。
The left side and the right side of the graphene film are connected with two electrodes, the temperature change of the graphene electrothermal film is measured by using a temperature control sensor, the stable temperature of the graphene film reaches 514 ℃ in only 0.5 second under the direct current voltage of 10V in the atmospheric environment, and the temperature of the graphene film is reduced to be close to the room temperature in 0.5 second due to the excellent thermal conductivity of the graphene film after power failure. The graphene film is stable in temperature along the linear direction of the two electrodes, and the temperature is about 514 ℃.
2 x 2cm of the graphene film2The nano-scale acoustic wave generator is formed by paving the graphene film on a polyimide substrate (with the thermal conductivity of 0.35W/mK), coating silver colloid electrodes at two ends of the graphene film, and respectively connecting the two silver colloid electrodes with the positive electrode and the negative electrode of an electric signal input unit.
Example 3:
(1) preparing the graphene oxide into a graphene oxide aqueous solution with the concentration of 1ug/mL, and performing suction filtration to form a membrane by taking the hydrophilic polytetrafluoroethylene membrane as a substrate.
(2) And (3) putting the graphene oxide membrane attached to the hydrophilic polytetrafluoroethylene in a closed container, and fumigating at high temperature of 90 ℃ for 0.5h from the bottom to the top.
(3) And uniformly coating the molten solid transfer agent sulfur on the surface of the reduced graphene oxide film by using a method such as evaporation, casting and the like, and slowly cooling at room temperature.
(4) And slowly volatilizing the graphene film supported by the solid transfer agent at 120 ℃ to obtain the independent self-supporting graphene film.
(5) And (2) spraying a layer of metal cobalt on the surface of the chemically reduced graphene film in a magnetron sputtering mode, wherein the molar weight of the finally sputtered metal nanoparticles is 15.9% of the molar weight of carbon atoms in the graphene film by controlling sputtering parameters.
(6) The graphene film sputtered with the metal is chlorinated at 1000 degrees celsius, allowing the cobalt nanoparticles to escape as chlorides. The method specifically comprises the following steps: and (3) placing the graphene film sputtered with the metal nanoparticles in an environment with the chlorine content of 5% for heating treatment for 1 h.
(7) The chlorinated graphene film is subjected to high-temperature treatment at 2000 ℃, and specifically comprises the following steps: below 1500 ℃ and 10 ℃ per minute; above 1500 ℃, 3 ℃ per minute; keeping the temperature at 2000 ℃ for 0.5 h; graphene films with a thickness of 28nm were obtained.
Through Raman test, the graphene film with the graphene mold having a plurality of cross-linked structures has stronger sp3Carbon bonding Peak (1360 cm)-1) The degree of crosslinking (said degree of crosslinking being sp) as determined by the ID/IG area ratio3Carbon content-mass percentage) was 1.9%; the interlayer spacing of the electron diffraction fringes of the graphene film with the crosslinked structure is smaller than that of the normal graphene film. The prepared graphene film has the strength of 11GPa and the density of 2.1g/cm3。
The left side and the right side of the graphene film are connected with two electrodes, the temperature change of the graphene electrothermal film is measured by using a temperature control sensor, the stable temperature of the graphene film can reach 518 ℃ only in 0.5 second under the direct current voltage of 10V in the atmospheric environment, and after the graphene film is powered off, the temperature of the graphene film can be reduced to be close to the room temperature in 0.5 second due to the excellent thermal conductivity of the graphene film. The graphene film is stable in temperature along the linear direction of the two electrodes.
2 x 2cm of the graphene film2The nano-scale acoustic wave generator is formed by paving the graphene film on a polyimide substrate (with the thermal conductivity of 0.35W/mK), coating silver colloid electrodes at two ends of the graphene film, and respectively connecting the two silver colloid electrodes with the positive electrode and the negative electrode of an electric signal input unit.
Example 4:
(1) preparing the graphene oxide into a graphene oxide aqueous solution with the concentration of 3ug/mL, and performing suction filtration to form a film by taking the AAO film as a substrate.
(2) And (3) putting the graphene oxide membrane attached to the AAO membrane into a closed container, and fumigating the graphene oxide membrane at the high temperature of 100 ℃ from the bottom to the top for 0.2 h.
(3) And uniformly coating the melted solid transfer agent paraffin on the surface of the reduced graphene oxide film by using methods such as evaporation, casting and the like, and slowly cooling at room temperature.
(4) And slowly volatilizing the graphene film supported by the solid transfer agent at 200 ℃ to obtain the independent self-supporting graphene film.
(5) And (2) spraying a layer of metal titanium on the surface of the chemically reduced graphene film in a magnetron sputtering mode, wherein the molar weight of the finally sputtered metal nanoparticles is 25.4% of the molar weight of carbon atoms in the graphene film by controlling sputtering parameters.
(5) The graphene film sputtered with the metal is chlorinated at 1100 degrees celsius, allowing the titanium nanoparticles to escape as chlorides. The method specifically comprises the following steps: and (3) placing the graphene film sputtered with the metal nanoparticles in an environment with the chlorine content of 2% for heating treatment for 2 hours.
(6) The chlorinated graphene film is subjected to high-temperature treatment at 2000 ℃, and specifically comprises the following steps: below 1500 ℃, 12 ℃ per minute; above 1500 ℃, 4 ℃ per minute; and keeping the temperature at 2000 ℃ for 1h to obtain the graphene film with the thickness of 33 nm.
Through Raman test, the graphene film with the graphene mold having a plurality of cross-linked structures has stronger sp3Carbon bonding Peak (1360 cm)-1) The degree of crosslinking (said degree of crosslinking being sp) as determined by the ID/IG area ratio3Carbon content-mass percentage) was 2.2%; the interlayer spacing of the electron diffraction fringes of the graphene film with the crosslinked structure is smaller than that of the normal graphene film. The prepared graphene film has the strength of 9.6GPa and the density of 2.0g/cm3。
The left side and the right side of the graphene film are connected with two electrodes, the temperature change of the graphene electrothermal film is measured by using a temperature control sensor, the stable temperature of the graphene film is 506 ℃ only needing 0.5 second under the direct current voltage of 10V in the atmospheric environment, and after the graphene film is powered off, the temperature of the graphene film is reduced to be close to the room temperature within 0.5 second due to the excellent thermal conductivity of the graphene film. The graphene film is stable in temperature along the linear direction of the two electrodes.
2 x 2cm of the graphene film2The nano-scale acoustic wave generator is formed by paving the graphene film on a polyimide substrate (with the thermal conductivity of 0.35W/mK), coating silver colloid electrodes at two ends of the graphene film, and respectively connecting the two silver colloid electrodes with the positive electrode and the negative electrode of an electric signal input unit.
Example 5:
(1) preparing the graphene oxide into a graphene oxide aqueous solution with the concentration of 10ug/mL, and performing suction filtration to form a membrane by taking the hydrophilic polytetrafluoroethylene membrane as a substrate.
(2) And (3) putting the graphene oxide membrane attached to the hydrophilic polytetrafluoroethylene membrane in a closed container, and fumigating at high temperature of 80 ℃ HI from the bottom to the top for 0.8 h.
(3) And uniformly coating the melted solid transfer agent norbornene on the surface of the reduced graphene oxide film by using methods such as evaporation, tape casting and the like, and slowly cooling at room temperature.
(4) And slowly volatilizing the obtained graphene film supported by the solid transfer agent at 60 ℃ under 2 atmospheric pressures to obtain the independent self-supported graphene film.
(4) And spraying a layer of metal molybdenum on the surface of the chemically reduced graphene film in a magnetron sputtering mode. By controlling the sputtering parameters, the molar weight of the finally sputtered metal nanoparticles is 22.8% of the molar weight of carbon atoms in the graphene film.
(5) The graphene film sputtered with the metal is chlorinated at 800 degrees celsius, so that the molybdenum nanoparticles escape as chlorides. The method specifically comprises the following steps: and (3) placing the graphene film sputtered with the metal nanoparticles in an environment with chlorine content of 6% for heating treatment for 3 h.
(6) The chlorinated graphene film is subjected to high-temperature treatment at 2000 ℃, and specifically comprises the following steps: below 1500 ℃, 7 ℃ per minute; and (3) preserving heat for 1h at the temperature of more than 1500 ℃, 2 ℃ per minute and 2000 ℃, so as to obtain the graphene film with the thickness of 36 nm.
Through Raman test, the graphene film with the graphene mold having a plurality of cross-linked structures has stronger sp3Carbon bonding Peak (1360 cm)-1) The degree of crosslinking (said degree of crosslinking being sp) as determined by the ID/IG area ratio3Carbon content-mass percentage) was 3.7%; the interlayer spacing of the electron diffraction fringes of the graphene film with the crosslinked structure is smaller than that of the normal graphene film. The prepared graphene film has the strength of 9.8GPa and the density of 2.2g/cm3。
The left side and the right side of the graphene film are connected with two electrodes, the temperature change of the graphene electrothermal film is measured by using a temperature control sensor, the stable temperature of the graphene film reaches 503 ℃ in 0.5 second under the direct current voltage of 10V in the atmospheric environment, and the temperature of the graphene film is reduced to be close to the room temperature in 0.5 second due to the excellent thermal conductivity of the graphene film after power failure. The graphene film is stable in temperature along the linear direction of the two electrodes.
2 x 2cm of the graphene film2The nano-scale acoustic wave generator is formed by paving the graphene film on a polyimide substrate (with the thermal conductivity of 0.35W/mK), coating silver colloid electrodes at two ends of the graphene film, and respectively connecting the two silver colloid electrodes with the positive electrode and the negative electrode of an electric signal input unit.
Claims (5)
1. A nanometer-scale sound wave generator is characterized by comprising a substrate with the thermal conductivity lower than 200W/mK, a sound wave generating film paved on the substrate, an electric signal input unit and two silver colloid electrodes for audio current input, wherein the two silver colloid electrodes are respectively arranged at two ends of the sound wave generating film; the sound wave generating film is a graphene film, the thickness of the sound wave generating film is not more than 60nm, and the density of the sound wave generating film is 2.0-2.2 g/cm3The graphene layers are crosslinked, the degree of crosslinking is 1-5%, and the graphene film is prepared by the following method:
(1) preparing graphene oxide into a graphene oxide aqueous solution with the concentration of 0.5-10 mug/mL, and filtering to form a film;
(2) putting the graphene oxide film attached to the suction filtration substrate into a closed container, and fumigating the graphene oxide film from the bottom to the top at the HI high temperature of 80-100 ℃ for 0.1-1 h;
(3) uniformly coating the melted solid transfer agent on the surface of the reduced graphene oxide film, and slowly cooling at room temperature until the film is separated from the substrate;
(4) heating the reduced graphene oxide film treated in the step (3) to sublimate or volatilize the solid transfer agent;
(5) spraying a layer of metal titanium, molybdenum or cobalt on the surface of the chemically reduced graphene film in a magnetron sputtering mode, wherein the molar weight of sputtered metal nanoparticles is not more than 30% of the molar weight of carbon atoms in the graphene film;
(6) chloridizing the graphene film sputtered with the metal at 800-1200 ℃, and dissipating the metal nanoparticles in the form of chloride;
(7) and (3) placing the chlorinated graphene film in a high-temperature furnace, heating to 1500 ℃ at 5-20 ℃ per minute, and then heating to 2000 ℃ at 2-5 ℃ per minute to obtain the interlayer crosslinked graphene film.
2. The nano-scale acoustic wave generator of claim 1, wherein the substrate having a thermal conductivity of less than 200W/mK is selected from a polymer substrate, a silicon substrate.
3. The nano-scale acoustic wave generator of claim 1, wherein the solid transfer agent is selected from the group consisting of paraffin, naphthalene, camphor, norbornene, rosin.
4. The nano-scale acoustic-wave generator of claim 1, wherein the sublimation temperature of the solid transfer agent is controlled to be below 320 ℃.
5. The nanoscale acoustic-wave generator of claim 1, wherein the chlorination treatment is: and (3) placing the graphene film sputtered with the metal nano particles in an environment with the chlorine content of 0.5-10% for heating treatment for 0.1-4 h.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810753802.8A CN108821264B (en) | 2018-07-10 | 2018-07-10 | Nano-scale sound wave generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810753802.8A CN108821264B (en) | 2018-07-10 | 2018-07-10 | Nano-scale sound wave generator |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108821264A CN108821264A (en) | 2018-11-16 |
CN108821264B true CN108821264B (en) | 2020-02-07 |
Family
ID=64135571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810753802.8A Active CN108821264B (en) | 2018-07-10 | 2018-07-10 | Nano-scale sound wave generator |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108821264B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109451406A (en) * | 2018-12-05 | 2019-03-08 | 浙江大学 | The hanging graphene thermal acoustic device rung with flat and wideband |
CN109928385A (en) * | 2019-03-17 | 2019-06-25 | 杭州高烯科技有限公司 | A kind of preparation method and application of zero defect closs packing graphene submicron film |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214461A (en) * | 2010-04-09 | 2011-10-12 | 赵东方 | Ultrasonic generator and applications thereof in ultrasonic nanometer material preparation system |
JP2013249530A (en) * | 2012-06-04 | 2013-12-12 | National Institute Of Advanced Industrial Science & Technology | Method for producing graphene and graphene |
KR101994428B1 (en) * | 2015-05-22 | 2019-06-28 | 주식회사 엘지화학 | Method of preparing graphene-magnetic particle composite |
CN106248196B (en) * | 2016-08-31 | 2019-10-15 | 哈尔滨工业大学 | A kind of micro- acoustic detection analytical equipment and the array audio signal processing method based on the device |
CN106744920B (en) * | 2017-02-28 | 2019-01-22 | 中国工程物理研究院激光聚变研究中心 | The preparation method of multi-layer graphene self-supporting pipe without clad skeleton |
CN108249424B (en) * | 2018-01-23 | 2020-01-10 | 长兴德烯科技有限公司 | Preparation method of bromine-doped high-conductivity ultrathin graphene film |
-
2018
- 2018-07-10 CN CN201810753802.8A patent/CN108821264B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN108821264A (en) | 2018-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107651673B (en) | Nano-scale thickness independent self-supporting folded graphene film and preparation method thereof | |
WO2020187332A1 (en) | Method for electrocatalytic preparation of defect-free disorderly stacked graphene nanofilms and application | |
CN108892133B (en) | Nanoscale sound wave generating film and nanoscale sound wave generator | |
KR101084975B1 (en) | A method for manufacturing graphene film, graphene film manufuctured by the same, electrode material comprising the same | |
JP5363260B2 (en) | Carbon nanotube composite material and manufacturing method thereof | |
CN108821264B (en) | Nano-scale sound wave generator | |
JP7186464B2 (en) | Free-standing graphene film and method for producing same | |
JP2018524257A (en) | Super flexible high thermal conductive graphene film and method for manufacturing the same | |
CN109911888B (en) | Preparation method and application of defect-free disordered-layer stacked graphene nano-film | |
JP2009143799A (en) | Single crystal graphene sheet and method for producing the same | |
CN107857251A (en) | A kind of nanometer grade thickness independent self-supporting expandable graphite alkene film and preparation method thereof | |
JP2011168449A (en) | Method for manufacturing graphene film | |
CN109107557B (en) | Photocatalytic graphene/silicon composite membrane and preparation method and application thereof | |
Ishikawa et al. | Electrophoretic deposition of high quality transparent conductive graphene films on insulating glass substrates | |
CN108862246B (en) | Tone adjustable nano-scale sound wave generator | |
Abdeltwab et al. | Structural, mechanical and electrical properties of sputter-coated copper thin films on polyethylene terephthalate | |
Ma et al. | Temperature dependence of negative permittivity behavior in graphene/alumina ceramic metacomposites | |
CN108955860B (en) | High-strength graphene film-based acoustic detector | |
CN104828808B (en) | A kind of preparation method of graphene film | |
WO2022048263A1 (en) | Ws2 nanosheet modified tin nanotube array composite material and preparation method therefor | |
CN108821263B (en) | High-strength graphene film and preparation method thereof | |
CN108840322B (en) | Foaming carbon film and preparation method thereof | |
CN108917914B (en) | Conductive polymer/graphene film composite film and application thereof in low-frequency acoustic detector | |
CN108871547B (en) | Graphene film-based low-frequency acoustic detector | |
CN108966376B (en) | Collapsible electric heat membrane device based on graphite alkene |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |