CN108735607A - Manufacturing method of groove MOSFET device based on microwave plasma oxidation - Google Patents
Manufacturing method of groove MOSFET device based on microwave plasma oxidation Download PDFInfo
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- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 54
- 230000003647 oxidation Effects 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000001301 oxygen Substances 0.000 claims abstract description 54
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 54
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- 239000008246 gaseous mixture Substances 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- -1 oxygen radical Chemical class 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 235000017899 Spathodea campanulata Nutrition 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000006897 homolysis reaction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
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Abstract
A method for manufacturing a groove MOSFET device based on microwave plasma oxidation comprises the following steps: after the groove gate is etched, oxidizing silicon carbide on the surface of the groove gate into silicon dioxide by using microwave plasma to form a groove gate oxide layer, wherein the step of forming the groove gate oxide layer comprises the following steps: placing the silicon carbide substrate subjected to groove gate etching in a microwave plasma generating device; introducing oxygen-containing gas to generate oxygen plasma; the oxygen plasma reacts with the silicon carbide to generate silicon dioxide with a preset thickness; stopping introducing the oxygen-containing gas, and finishing the reaction; wherein the reaction temperature of the oxygen plasma and the silicon carbide is 500-900 ℃, and the reaction pressure is 400-1000 mTorr. The invention can obviously improve the oxidation efficiency of the silicon carbide, improve the interface quality and form a uniform gate dielectric layer.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of groove MOSFET based on microwave plasma oxidation
The manufacturing method of device.
Background technology
Silicon carbide (SiC) is third generation semiconductor-semiconductor material with wide forbidden band, big, the critical breakdown field with energy gap
The advantages that Qiang Gao, high thermal conductivity, be make high pressure, large power semiconductor device ideal material, under SiC power electronic devices is
The core of generation efficient electrical power electronics technologies.SiC MOSFETs are compared to Si MOSFETs conducting resistances smaller, switch electricity
Press higher, applying frequency higher, temperature performance more preferable, especially suitable for power switch application.SiC MOSFET elements integrate
Manufacturing process, especially gate medium technique are the hot spots of current research.
SiC is uniquely being capable of thermally grown SiO2Compound semiconductor, this allows for SiC and may be implemented all Si MOS's
Device architecture.The thermal oxide of SiC needs oxidizing temperature more higher than Si, oxidizing temperature to be up to 1300 DEG C.The SiC oxygen of mainstream at present
Chemical industry skill is mainly the oxidation furnace using resistance heating manner, and cardinal principle is reacting based on silicon carbide and oxygen molecule, but
It is this method with oxygen molecule oxidation, be easy to cause the dangling bonds and Lacking oxygen of interface residual carbon cluster, Si-O-C keys, C
The defects of, interface quality is degenerated, and causes mobility to reduce, as shown in Figure 1.Especially at such high temperatures, interface is removed
Oxidation is outer, can also cause interface damage, reduces oxidation efficiency.
In recent years, researcher proposed a kind of method utilizing plasma oxidation SiC at low temperature, to a certain extent
Improve interface quality.However the oxidation efficiency of this method is relatively low, especially is needing to obtain thicker SiO2In the case of layer,
Oxidization time is longer, SiC and SiO2Interface, SiC and SiO2It can be still in a kind of thermodynamic equilibrium state, lead to interface quality
It is unsatisfactory.
In addition, experiment shows that oxidation rate difference of the silicon carbide on different crystal orientations is very big, it is vertical with a axis in the faces Si
3-5 times of the oxidation rate of plane plane even vertical with c-axis.If forming the grid of UMOS structures using thermal oxidation technology
The oxidated layer thickness obtained on side wall is 3-5 times of bottom by oxygen, as shown in Fig. 2, this allows for device under forward bias not
It can be normally-open.
Because raceway groove is the longitudinal channel formed from side wall, in order to keep device normally-open, it is desirable to provide higher grid
Press VG.But due to the SiO of thermal oxide growth on side wall2Rate is the several times of bottom oxide rate, this makes device in grid voltage
When reaching the maximum value of grid oxygen safe operating voltage, channel region is not up to threshold voltage due to grid voltage on side wall, and device cannot be opened
It opens, forward characteristic cannot be obtained, continue growing grid voltage, bottom gate oxidative stability can degenerate so that bottom oxidization layer occurs in advance
Breakdown, device cisco unity malfunction.Therefore interface state is formed, uniform grid oxide layer is the key that make groove MOSFET element.
Invention content
In order to solve the problems in the existing technology, the present invention proposes a kind of groove based on microwave plasma oxidation
The manufacturing method of MOSFET element can form interface state, uniform grid oxide layer.
In order to achieve the above object, the present invention uses following technical scheme：
A kind of manufacturing method of the groove MOSFET element based on microwave plasma oxidation, including：
Notched gates etching after, using microwave plasma by the Oxidation of SiC on notched gates surface be silica, shape
At groove gate oxide,
Wherein the step of formation groove gate oxide, includes：
Silicon carbide substrates after progress notched gates etching are placed in microwave plasma generation device；
It is passed through oxygen-containing gas, generates oxygen plasma；
Oxygen plasma generates the silica of predetermined thickness with silicon carbide reactor；
Stopping is passed through oxygen-containing gas, and reaction terminates；
Wherein, the reaction temperature of oxygen plasma and silicon carbide is 500-900 DEG C, reaction pressure 400-1000mTorr.
Preferably, oxygen plasma is warming up to the reaction temperature with the speed of 0.5-2 DEG C/s.
Preferably, the input power of the microwave plasma generation device is 800-2000W, microwave frequency 2.4-
2.5GHz。
Preferably, the plasma discharge time is 400-1000s.
Preferably, the oxygen-containing gas be pure oxygen or be oxygen and inert gas gaseous mixture, oxygen in the gaseous mixture
Gas content is preferably 30-99vol.%.
Preferably, the thickness of the silica of generation is 1-60nm.
Preferably, the method further includes the steps that the carbon monoxide that discharge generates.
Preferably, it is passed through nitrogen after reaction, cools under nitrogen atmosphere.
Compared with prior art, the invention has the advantages that：
The present invention can significantly improve the oxidation efficiency of silicon carbide, form the surface of low damage, improve surface roughness, and
The charcoal residual for reducing interface, reduces the dangling bonds of interface, the electronic defects in silica is reduced, to improve effective mobility
Rate, the especially effective mobility under high electric field.
The present invention can form uniform gate dielectric layer, keep the oxidated layer thickness on side wall suitable with bottom oxide layer thickness,
Under certain grid voltage, device can be made normally-open, obtain normal forward characteristic, prevent bottom gate oxide from puncturing in advance, played recessed
The advantage of Grooved-gate MOSFET's device.
Description of the drawings
Fig. 1 is SiC/SiO2Boundary defect schematic diagram；
Fig. 2 is the groove MOSFET element that conventional thermal oxidation technique is formed；
Fig. 3 A are the interface of ideally thermodynamics non-equilibrium；
Fig. 3 B are the interface of thermodynamic equilibrium state under the conditions of regular oxidation；
Fig. 4 is kinetics potential barriers of the SiC under different oxidizing conditions；
Fig. 5 is the preparation flow figure of concave groove MOSFET device of the embodiment of the present invention；
Fig. 6 is the SiC/SiO in the embodiment of the present invention2Interface；
Fig. 7 is the groove gate oxide in the embodiment of the present invention；
Fig. 8 is the interface state density comparison diagram in the embodiment of the present invention and comparative example.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
Oxidation technology is carried out on SiC forms SiO2When, it is also desirable to the nonequilibrium interface of thermodynamics is obtained, is such as schemed
Shown in 3A.However under the conditions of actual regular oxidation, the interface of thermodynamical equilibrium can only be obtained, as shown in Figure 3B, this feelings
Under condition, carbon residual is easy tod produce, on the one hand gate medium is caused to leak electricity, still further aspect forms the scattering center at interface, to shadow
The mobility of silicon carbide is rung, and then the output current of device is caused to reduce, and induces integrity problem.Although low temperature plasma
Oxidation technology can improve interface quality to a certain extent, but since oxidization time is longer, actually in SiC and SiO2Boundary
Face is still in a kind of thermodynamic equilibrium state.
Inventor has found that the process that Oxidation of SiC forms silica is considered as the anti-of carbon by a large amount of experimental study
Diffusion process is answered, under the conditions of low temperature plasma oxidation, since the reaction process duration is longer, the reaction and diffusion process of carbon
It is suitable with the chemical reaction process of plasma, in this case, in SiC/SiO2Interface can still exist in a certain range
The gradient of carbon is distributed.Although researcher once attempted to carry out the plasma oxidation of silicon carbide at high temperature, due to temperature liter
Gao Hou, plasma oxidation reaction condition are difficult to control, and lead to SiC/SiO2Interface quality does not have clear improvement.
For this purpose, the present invention proposes a kind of new Oxidation of SiC method based on microwave plasma, pass through optimization etc.
The condition of ionic oxide formation obtains better oxidation efficiency, and significantly improves interface quality.One kind proposed by the present invention is based on
The oxidation technology manufacturing method of efficient, the low damage of microwave plasma, be based on microwave plasma mode, make oxygen molecule etc. from
Daughter oxygen radical or oxygen plasma react to substitute oxygen molecule with silicon carbide, make corresponding temperature and table
Face oxygen concentration reduces, and to inhibit the formation of C related defects and surface of SiC etch pit, reduces surface damage, obtains relatively more flat
The surface of smoothization, to improve the carrier mobility under MOSFET element high temperature, High-Field.
The present invention mainly by being ionized to molecular oxygen in specific temperature and pressure limit, make it formed oxygen etc. from
The oxygen radical that daughter or homolysis are formed.Under the oxidizing condition of the present invention, compared with oxygen molecule, oxygen plasma or oxygen are certainly
There is apparent chemism and smaller size by base.When interface oxidation occurs, the same of oxide layer can obtained
When, since it has smaller size, not needed in diffusion process can be at interface with the more interactions of lattice generation
The carbon residual oxidization that place generates reaction, forms volatile carbon monoxide, during the reaction deviates from carbon monoxide.
The atomic heat capacity that free radical or plasma have is utilized simultaneously in the present invention, and the heat that this process generates is not easy
It discharges, can only be fallen by the form loss of radiation during the reaction, so the effective energy loss for having saved reaction, and
In this process, this reaction energy of non-fugacity has all been converted to the supply of chemical bond, to lead to carbon
Residual.
As shown in figure 4, the present invention is passed through gas content by optimizing and revising, reaction chamber air pressure, plasma temp-rising speed
The reaction conditions such as rate change the ratio of elemental oxygen and molecular oxygen, the ratio of elemental oxygen are made to be far longer than the ratio of molecular oxygen, to
The potential barrier of kinetics is adjusted, reaction pressure is adjusted and changes kinetic barrier, changed by changing kinetics potential barrier
Become the micro-structure of interface.Here micro-structure includes the surface bonding situation of atom, the defects of oxide quantity, Yi Jibiao
The roughness in face.The bonding on the surface of oxide will influence Coulomb scattering center, to influence the load of the low field in raceway groove
Transport factor is flowed, and influences the subthreshold swing of MOS field-effect transistors.The change of second kinetic barrier can change boundary
Face translates into point mean allocation of middle atom, and distribution more uniformly will be helpful to reduce the phon scattering in raceway groove, in changing
Mobility under electric field status.
By adjusting kinetic barrier, more smooth interface is obtained, can be effectively reduced, due to caused by roughness
Rough interface scattering has huge help for improving the electron mobility under high electric field state, will directly influence the output of device
Current characteristics.In addition, can fully reduce the quantity of defect in gate oxide by adjusting kinetic barrier, can be effectively improved can
By property, the flat-band voltage caused by grid voltage, the unstability of threshold voltage are reduced, and long-range coulomb can be effectively reduced and dissipated
It penetrates.
On the basis of the studies above, a kind of Oxidation of SiC method based on microwave plasma proposed by the present invention,
Including：
Silicon carbide substrates are provided；
The silicon carbide substrates are placed in microwave plasma generation device；
It is passed through oxygen-containing gas, generates oxygen plasma；
Oxygen plasma generates the silica of predetermined thickness with silicon carbide reactor；
Stopping is passed through oxygen-containing gas, and reaction terminates.
The microwave plasma oxidation of SiC includes following procedure：Oxygen radical or oxonium ion transporting to oxidation layer surface；
Oxygen radical or oxonium ion are by oxide layer to spreading at reaction interface；Interface, silicon carbide and oxygen radical or oxygen from
The reaction of son；Reaction generates gas (CO) and is spread to outside through oxide layer；Reaction generates gas and is excluded at oxidation layer surface.
In an embodiment of the present invention, the reaction temperature of oxygen plasma and silicon carbide be 500-900 DEG C, plasma with
The speed of 0.5-2 DEG C/s is warming up to reaction temperature, reaction pressure 400-1000mTorr.
In an embodiment of the present invention, the input power of microwave plasma generation device is 800-2000W, microwave frequency
For 2.4-2.5GHz.The plasma discharge time can be 400-1000s.
Under these conditions, diameter, density, duration and the excitation position of plasma fireball can effectively be controlled
Deng to reach ideal oxidizing condition.Inventor is had found by test of many times, under the oxidizing condition of the present invention, plasma
The chemical reaction rate of body is far longer than Carbon diffusion effect, and the isotropic behavior of the silica of generation is excellent, especially exists
When preparing thicker silicon oxide layer, effect is more prominent.
As shown in figure 5, being based on above-mentioned Oxidation of SiC method, the present invention proposes a kind of based on microwave plasma oxidation
Groove MOSFET element manufacturing method, including：
Notched gates etching after, using microwave plasma by the Oxidation of SiC on notched gates surface be silica, shape
At groove gate oxide,
Wherein, the step of formation groove gate oxide includes：
Silicon carbide substrates after progress notched gates etching are placed in microwave plasma generation device；
It is passed through oxygen-containing gas, generates oxygen plasma；
Oxygen plasma generates the silica of predetermined thickness with silicon carbide reactor；
Stopping is passed through oxygen-containing gas, and reaction terminates；
Wherein, the reaction temperature of oxygen plasma and silicon carbide is 500-900 DEG C, reaction pressure 400-1000mTorr.
In an embodiment of the present invention, oxygen-containing gas be pure oxygen or be oxygen and inert gas gaseous mixture, it is described mixed
It is 30-99vol.% to close oxygen content in gas.
Oxidated layer thickness in the present invention can flexible modulation, in some embodiments of the invention, the silica of generation
Thickness be 1-60nm.
In an embodiment of the present invention, this method further includes the steps that the carbon monoxide that discharge generates.
In some embodiments of the invention, it is passed through nitrogen after reaction, cools under nitrogen atmosphere.
Embodiment 1
As shown in fig. 6, the preparation method of groove MOSFET element generally includes following steps：
(1) substrate is cleaned；
(2) P-base injection masks and ion implanting are formed on substrate；
(3) N-plus masks and ion implanting are formed；
(4) P-base and the corresponding mask of removal are formed；
(5) N-plus and the corresponding mask of removal are formed；
(6) P-plus masks and ion implanting are formed；
(7) high temperature activation anneal；
(8) P-plus and the corresponding mask of removal are formed；
(9) notched gates etch mask is formed；
(10) notched gates etch；
(11) groove gate oxide is formed；
(12) polygate electrodes are made；
(13) source electrode is made；
(14) drain electrode is made；
(15) it makes layer and asks medium；
(16) cap rock metal is made.
The present embodiment is when forming groove gate oxide, using microwave plasma oxidation method, the specific steps are：
The microwave input power of microwave plasma generation device is set as 1000w, excites the microwave of microwave plasma
Frequency adjustable extent is 2.4-2.5GHz.In the environment of air pressure 800mTorr, pure oxygen, setting sample stage initial temperature is set
It is set to 100 DEG C, plasma is heated up with the speed of 1.5 DEG C/s, until 800 DEG C of the microwave plasma oxidation temperature set, etc.
The ionic discharge time is 800s, carries out plasma oxidation, oxidated layer thickness is about 40nm, and after the completion of oxidation, purity oxygen is changed
For pure nitrogen gas, cool under nitrogen atmosphere.
As seen from Figure 7, plasma oxidation technique using the present invention forms SiC/SiO2Interface than more visible, table
Surface roughness is relatively low, and oxide layer damage is few, and surface is flat, and side wall is consistent with bottom oxide rate, and isotropism is good.
In the comparative example of the present invention, silicon carbide is sunk to the bottom and is placed in high temperature oxidation furnace, carried out at 1200 DEG C conventional high
Temperature oxidation is significantly lower than from figure 8, it is seen that obtaining interface state density using the plasma oxidation technique in the embodiment of the present invention
Conventional high temperature aoxidizes.
Compared with conventional high temperature oxidation or low-temperature plasma method for oxidation, efficiency of the invention can improve
20%-50%, C related defects can reduce by 20% or more, and the formation rate of surface of SiC etch pit can be reduced to 10% or less.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the present invention
Within the scope of.
Claims (8)
1. a kind of manufacturing method of the groove MOSFET element based on microwave plasma oxidation, including：
Notched gates etching after, using microwave plasma by the Oxidation of SiC on notched gates surface be silica, formed it is recessed
Slot gate oxide,
Wherein the step of formation groove gate oxide, includes：
Silicon carbide substrates after progress notched gates etching are placed in microwave plasma generation device；
It is passed through oxygen-containing gas, generates oxygen plasma；
Oxygen plasma generates the silica of predetermined thickness with silicon carbide reactor；
Stopping is passed through oxygen-containing gas, and reaction terminates；
Wherein, the reaction temperature of oxygen plasma and silicon carbide is 500-900 DEG C, reaction pressure 400-1000mTorr.
2. manufacturing method according to claim 1, wherein oxygen plasma is warming up to described with the speed of 0.5-2 DEG C/s
Reaction temperature.
3. manufacturing method according to claim 1, wherein the input power of the microwave plasma generation device is
800-2000W, microwave frequency 2.4-2.5GHz.
4. manufacturing method according to claim 1, wherein the plasma discharge time is 400-1000s.
5. manufacturing method according to claim 1, wherein the oxygen-containing gas is pure oxygen or is oxygen and indifferent gas
The gaseous mixture of body, oxygen content is preferably 30-99vol.% in the gaseous mixture.
6. manufacturing method according to claim 1, wherein the thickness of the silica of generation is 1-60nm.
7. manufacturing method according to claim 1, wherein the method further includes the step for the carbon monoxide that discharge generates
Suddenly.
8. manufacturing method according to claim 1, wherein be passed through nitrogen after reaction, under nitrogen atmosphere cooling drop
Temperature.
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| CN109545687A (en) * | 2018-11-13 | 2019-03-29 | 中国科学院微电子研究所 | Groove MOSFET device manufacturing method based on microwave plasma oxidation under alternating voltage |
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