CN108724026B - A kind of resin wheel, preparation method and application for cadmium zinc telluride crystal wafer grinding - Google Patents
A kind of resin wheel, preparation method and application for cadmium zinc telluride crystal wafer grinding Download PDFInfo
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- CN108724026B CN108724026B CN201810441686.6A CN201810441686A CN108724026B CN 108724026 B CN108724026 B CN 108724026B CN 201810441686 A CN201810441686 A CN 201810441686A CN 108724026 B CN108724026 B CN 108724026B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
- B24D3/344—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent the bonding agent being organic
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention belongs to resin wheel technical fields, and in particular to a kind of resin wheel, preparation method and application for cadmium zinc telluride crystal wafer grinding.Processed diamond is mixed with coupling agent according to formula rate, after ultrasonic treatment successively with phenolic resin, the mixture of pore creating material and silicon carbide and hollow ball shape silica carries out mixing and ball milling and molding mass is made, finished product grinding wheel is made in hot repressing demoulding, prepared resin wheel can be used for the thinned grinding of cadmium zinc telluride crystal wafer, the porosity of grinding wheel is 40-70%, even air hole distribution and pore size are 70-200 μm, chip chipping be can control in cadmium zinc telluride crystal wafer reduction process in 35 μm, surface pattern consistency is good simultaneously, avoid inlaying for surface particles, wafer surface lines uniformity after being ground is thinned, no deep scratch ensure that the yields of cadmium zinc telluride crystal wafer, improve processing efficiency, show preferably application value.
Description
Technical field
The invention belongs to resin wheel technical fields, and in particular to it is a kind of for cadmium zinc telluride crystal wafer grinding resin wheel,
Preparation method and application.
Background technique
Cadmium zinc telluride crystal wafer (CdZnTe, CZT) crystal is broad stopband II-VI group compound semiconductor, and monocrystal is in room temperature
Under the conditions of have high resolution ratio, be widely used as the epitaxial substrate and indoor temperature nucleus radiation detector of infrared detector HgCdTe
Deng, it have excellent photoelectric properties, X-ray and gamma-rays photon directly can be changed into electronics under room temperature state, be
The ideal semiconductor material of manufacture room temperature X-ray and gamma ray detector so far.Compared with silicon and germanium detector,
CdZnTe crystal is that 2,000,000 photons/(smm) semiconductor can be uniquely worked and can handled under room temperature state.In addition,
CdZnTe crystal light splitting rate surpasses all spectroscopes that can be bought.The plurality of advantages of CdZnTe detector, so that it is got over
It is more widely applied, there is application in the fields such as nuclear safety, environmental monitoring, astrophysics.
Zhang Zhenyu of Dalian University of Technology etc. uses 2-5 μm of diameter of Al2O3CZT chip is polished directly and is polished
Liquid polishing experiment (soft crisp functional crystal cadmium-zinc-teiluride chemically-mechanicapolish polish mechanical engineering journal, 2008,44 (12): 215-220,
The preparation of novel environment friendly polishing fluid and its to the chemically mechanical polishing China Mechanical Engineering of soft crisp cadmium zinc telluride crystal wafer, 2014,25
(22): 3008-3011) prove that CZT crystal is a kind of soft and fragile crystal, except hard with common hard brittle material (such as monocrystalline silicon)
Outside crisp fracture characteristics, the insertion of hard particles is often had in crystal.The processing method of CZT crystal is mostly used greatly at present and is ground
Grinding process, the workpiece surface layer defects that this method processes are obvious, chipping is more, and there are pit, micro-crack in surface, and is easy
Have particle studded in plane of crystal, these defects will affect the performance and its quality of detector, therefore the processing of CZT just has centainly
Difficulty.The CZT crystal pro cessing technology of traditional handicraft is first to cut chip with inner circle cutting machine, then uses 1-2 μm of white fused alumina
Grinding, then mechanically polished with the particle of Nano grade, finally erosion removal surface is carried out with the Br-MeOH solution of 2-5%
Mechanical damage layer.But in general, the research report of the existing reduction process for CZT chip is less, and existing processing side
The major drawbacks of method are: efficiency is slow and is easy to inlay particulate matter and can not be removed by polishing on surface, therefore it is necessary to right for pole
Related processing equipment is further improved in existing processing technology and process.
Summary of the invention
Object of the present invention is to design a kind of resin wheel for cadmium zinc telluride crystal wafer grinding, and it is applied to cadmium-zinc-teiluride crystalline substance
Working efficiency reduction can be improved during thinned cadmium-zinc-teiluride (CZT) chip and collapse for the reduction process of piece, this thinned grinding wheel
Mouth rate, can be embedded in surface to avoid particulate matter, can substitute traditional cadmium zinc telluride crystal wafer and processing technology is thinned.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of resin wheel for cadmium zinc telluride crystal wafer grinding, is prepared: diamond by the raw material of following volume parts
10-20 parts, 2-5 parts of silicon carbide, 5-10 parts of coupling agent, 0.5-2 parts of pore creating material, 8-15 parts of preparing spherical SiO 2, phenolic resin 12-
18 parts.
The resin wheel for cadmium zinc telluride crystal wafer grinding, the volume parts of specific formula are for example are as follows: and 12 parts of diamond,
3 parts of silicon carbide, 8 parts of coupling agent, 1 part of pore creating material, 15 parts of preparing spherical SiO 2,15 parts of phenolic resin.
Specifically, diamond grit is 4-6 μm；Carborundum granularity is 0.5 μm -2 μm；Preparing spherical SiO 2 is hollow knot
Structure, intermediate value are 0.9 μm.
Preferably, coupling agent is gamma-aminopropyl-triethoxy-silane.
The preparation method of the above-mentioned resin wheel for cadmium zinc telluride crystal wafer grinding, comprising the following steps:
(1) it is mixed after crossing silicon carbide, hollow ball shape silica 280 mesh screen 3 times respectively, obtains mixed powder I；Pore-creating
Agent is spare after crossing 350 mesh 1-3 times；Phenolic resin is spare with crossing 350 mesh screen 1 time after cryomilling machine ball milling 72-120h；
(2) to diamond surface, with 80-90 DEG C of lye, (NaOH or mass fraction that mass fraction is 10-50% are 10-
50% KOH solution) processing 60-120min, it is mixed after processing with coupling agent 550, and 300-400mL acetone ultrasonic disperse is added
15-25min is transferred in heating wire baking oven after ultrasonic treatment and dries at a temperature of 120 DEG C, after drying first and after sieving in step (1)
Phenolic resin mixed 280 mesh 3 times, then mixed 200 mesh 3 times with the pore creating material in step (1), and obtained mixed powder
II；
(3) it crosses 200 mesh 2 times, obtains mixed after mixing the mixed powder II in step (2) with mixed powder I in step (1)
Close powder III；By mixed powder III and corundum ceramic ball in oval ladle mixing, the mixing on three-dimensional planetary ball mill
Ball milling 1-3h is crossed 200 mesh 1 time, is carried out pellet separation, is obtained molding mass, and examine the uniformity of mixing；
(4) molding mass in step (3) is subjected to mold assembling according to forming requirements, fed intake, and hot pressing circularizes, and is dipped in
It is cooling in cold water, grinding wheel ring is demoulded to obtain, finished product grinding wheel is made according to drawing in grinding wheel ring.
Specifically, the weight ratio of corundum ceramic ball and mixed powder III are 1:2 or 1:3 in step (3).
Specifically, hot pressing described in step (4) are as follows: rise the molding mass after assembling, feeding intake in preheated hot press
Temperature is to 180-200 DEG C, then heat-insulation pressure keeping 1-3min under conditions of initial pressure 1.8-2.2Mpa, then instantaneously boosts to 5.8-
6.2Mpa deflates 3 times or 4 times in 2min and (in order to guarantee molding effect, while mold being avoided to burst apart danger, in pressing process
Bleed air operation is carried out, so that the exhaust gas in mold is discharged), it 30 seconds every time, is then circularized after heat-insulation pressure keeping 60-80min.
Application of the above-mentioned resin wheel for cadmium zinc telluride crystal wafer grinding in cadmium zinc telluride crystal wafer grinding.
Grinding wheel formula composition in, diamond is abrasive material, primarily serve removal workpiece surplus effect, can be applicable in monocrystalline,
Polycrystalline and from sharp one or two kinds of above type；Silicon carbide primarily serves the effect of auxiliary abrasive, while can be with Buddha's warrior attendant
Stone carries out grain composition；Coupling agent is both sexes, has inorganic and organic response characteristic, can be with organic polymer and inorganic
The reaction of object surface, plays function served as bridge；Pore creating material primarily serves the effect for holding bits, while can merge with resinoid bond one
It rises, the intensity of reinforced resin bonding agent itself；Preparing spherical SiO 2 be it is micron-sized, primarily serve it is soft throwing and appearance bits effect,
Simultaneously because it can be attached to wheel face, so can play the role of increasing grinding wheel frame strength；Phenolic resin primarily serves
Hold the effect of mill auxiliary material.
The beneficial effects of the present invention are:
The present invention prepares a kind of grinding wheel for cadmium zinc telluride crystal wafer (CZT) grinding, and the porosity of grinding wheel is 40-70%, stomata
It is evenly distributed and pore size is 70-200 μm, can control chip chipping in cadmium zinc telluride crystal wafer reduction process in 35 μm,
Surface pattern consistency is good simultaneously, avoids inlaying for surface particles, under conditions of cadmium zinc telluride crystal wafer has soft crisp characteristic, to it
The yields for be thinned wafer surface lines uniformity after grinding, ensure that without deep scratch cadmium zinc telluride crystal wafer, improves processing
Efficiency.
Detailed description of the invention
Fig. 1 show the low range SEM figure of the resin wheel for cadmium zinc telluride crystal wafer grinding of the preparation of embodiment 1；
Fig. 2 show the high magnification SEM figure of the resin wheel for cadmium zinc telluride crystal wafer grinding of the preparation of embodiment 1；
Fig. 3 show cadmium zinc telluride crystal wafer bonding die schematic diagram；
Fig. 4, which is shown, subtracts cadmium zinc telluride crystal wafer with the resin wheel for cadmium zinc telluride crystal wafer grinding prepared in embodiment 1
The SEM figure of chipping situation after thin；
Fig. 5, which is shown, subtracts cadmium zinc telluride crystal wafer with the resin wheel for cadmium zinc telluride crystal wafer grinding prepared in embodiment 1
Cadmium zinc telluride crystal wafer surface quality figure after thin；
Fig. 6, which is shown, subtracts cadmium zinc telluride crystal wafer with the resin wheel for cadmium zinc telluride crystal wafer grinding prepared in embodiment 1
Cadmium zinc telluride crystal wafer three-dimensional surface shape figure after thin.
Specific embodiment
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
The specification of material therefor in specific embodiment are as follows: diamond is purchased from Henan Hui Feng diamond Co., Ltd, granularity
It is 4-6 μm, monocrystalline；Silicon carbide is purchased from pigeon group Co., Ltd, and granularity is 0.5 μm -2 μm；Preparing spherical SiO 2 is (purchased from muddy
Source county Fu Hong mineral article Co., Ltd) it is hollow structure, model is d01, and intermediate value is 0.9 μm；Pore creating material (is purchased from western energy
Chemical science and technology (Shanghai) Co., Ltd.) it is expended microsphere, model is DU152；Coupling agent is gamma-aminopropyl-triethoxy silicon
Alkane, model are 550；Phenolic resin model is PR-55730, and cadmium zinc telluride crystal wafer is mentioned by Beijing turbo Wan De Science and Technology Ltd.
For.
Embodiment 1
A kind of preparation method of the resin wheel for cadmium zinc telluride crystal wafer grinding, the resin wheel is by following volume parts
Raw material composition: 12 parts of diamond, granularity be 4 μm；1 part of pore creating material；3 parts of silicon carbide, granularity is 2 μm；8 parts of coupling agent；It is hollow
15 parts of the preparing spherical SiO 2 of structure, model are d01, and intermediate value is 0.9 μm；15 parts of phenolic resin；Specifically includes the following steps:
(1) spare after pore creating material being crossed 350 mesh 3 times；Phenolic resin 350 meshes excessively after cryomilling machine ball milling 120h
Net 1 time spare；It is mixed after silicon carbide is crossed 280 mesh screen 3 times respectively with hollow ball shape silica, obtains mixed powder I；
(2) NaOH solution (mass fraction 10%) for carrying out 90 DEG C to diamond surface handles 120min, is separated by solid-liquid separation,
Take solid clear water washing, dry, will by alkalilye degreasing, treated that diamond is mixed with coupling agent 550, and 350mL third is added
Ketone ultrasonic disperse 20min is transferred in heating wire baking oven after ultrasonic treatment and dries at a temperature of 120 DEG C, after drying first and in step (1)
Phenolic resin mixed 280 mesh 3 times, then mixed 200 mesh 3 times with the pore creating material in step (1), and obtained mixed powder
II；
(3) it crosses 200 mesh 2 times, obtains mixed after mixing the mixed powder II in step (2) with mixed powder I in step (1)
Close powder III；Mixing weight total amount half is added in mixed powder III and corundum ceramic ball in oval ladle mixing, bucket
Corundum ceramic ball, ceramic bulb diameter 5mm, the mixing ball milling 1h on three-dimensional planetary ball mill, cross 200 mesh 1 time, expected
Ball separation, obtains molding mass, checks the uniformity of mixture under the microscope, takes detected whether bright spot and mixing not at 6 at random
Uniform phenomenon；
(4) molding mass in step (3) is subjected to mold assembling according to forming requirements, fed intake, in preheated hot press
In be warming up to 180 DEG C, then heat-insulation pressure keeping 3min under conditions of initial pressure 2Mpa, then instantaneously boost to 6Mpa, then
It deflates 4 times, each 30s in 2min, is then circularized after heat-insulation pressure keeping 60min, non-mould unloading mold is dipped in cooling in cold water, is taken off
Finished sand torus is made according to drawing in mould.
Embodiment 2
The method of the present embodiment difference from example 1 is that, in grinding wheel formula, 19 parts of diamond, granularity is 6 μ
m；2 parts of pore creating material；2 parts of silicon carbide；5 parts of coupling agent；8 parts of preparing spherical SiO 2；12 parts of phenolic resin；
Preparation method, the KOH solution (mass fraction 40%) that flux-calcined condition is 80 DEG C in step (2), step
(3) mixed powder III and corundum ceramic ball Ball-milling Time are 2h, and the uniformity of test under microscope mixture is used after ball milling, with
Machine, which takes, has detected whether bright spot and mixing non-uniform phenomenon at 8.
Embodiment 3
The method of the present embodiment difference from example 1 is that, in grinding wheel formula, 10 parts of diamond；Pore creating material 0.5
Part；2 parts of silicon carbide；5 parts of coupling agent；8 parts of preparing spherical SiO 2；12 parts of phenolic resin；
Preparation method, phenolic resin Ball-milling Time 72h in step (1), hot alkali treatment time 60min in step (2)；Acetone
Add volume 300mL, sonication treatment time 15min；The weight ratio 3:1 of mixed powder III and corundum ceramic ball in step (3)；
180 DEG C of initial temperature in step (4), initial pressure 1.8Mpa, constant temperature and pressure keep 1min, boost to 5.8Mpa, deflation number 3
It is secondary, heat-insulation pressure keeping time 60min.
Embodiment 4
The method of the present embodiment difference from example 1 is that, in grinding wheel formula, 20 parts of diamond；Pore creating material 2
Part；5 parts of silicon carbide；10 parts of coupling agent；18 parts of phenolic resin；
Preparation method, 450 DEG C of thermokalite temperature in step (2), hot alkali treatment 120min；Acetone adds volume 400mL, ultrasound
Handle time 25min；Mixed powder III and corundum ceramic ball mixing and ball milling time are 3h in step (3)；It is initial in step (4)
180 DEG C of temperature, initial pressure 2.2Mpa, constant temperature and pressure keeps 3min, boosts to 6.2Mpa, heat-insulation pressure keeping time 80min.
Embodiment 5
The method of the present embodiment difference from example 1 is that, preparation method, phenolic resin ball milling in step (1)
Time 96h；425 DEG C of thermokalite temperature, hot alkali treatment 90min in step (2)；Sonication treatment time 20min；Mixing in step (3)
Powder III and corundum ceramic ball mixing and ball milling time are 2h；190 DEG C of initial temperature, initial pressure 2Mpa, constant temperature in step (4)
Constant pressure keeps 2min, boosts to 6Mpa, heat-insulation pressure keeping time 70min.
Characterization and performance evaluation
Grinding wheel fracture surface sweeping Electronic Speculum micro-structure diagram obtained is as illustrated in fig. 1 and 2 in embodiment 1, and the porosity of grinding wheel is
40-70%, even air hole distribution and pore size are 70-200 μm.
Application test
The resin wheel that method manufactures in embodiment 1 carries out fine grinding thinning back side experiment to cadmium zinc telluride crystal wafer.
Grind test condition:
Grinding machine: Disco DFG840；
Grinding wheel specification: 2000 mesh of ground shaft finish (4-6 μm)；
Finishing wheel size: 209 (grinding wheel outer diameter) × 22.5 (grinding wheel overall thickness) × 158 (grinding wheel aperture) × 3.5
(grinding wheel ring gear is wide) × 5 (grinding wheel tooth height) 2000 mesh；
Grinding sequence: it only refines；
Grinding process parameters:
Speed of grinding wheel spindle: 3000rpm；
Grinding fluid: deionized water；
Removal amount: 50 μm；
Load plate revolving speed: 200/200/200rpm；
No-spark rate of withdraw: 3rev.
Cadmium zinc telluride crystal wafer bonding die schematic diagram is as shown in figure 3, wafer surface quality is as shown in Fig. 4,5 and 6 after grinding.Fig. 4 is
The SEM of cadmium zinc telluride crystal wafer chipping situation after grinding schemes, and the chipping of wafer surface is less than 35 μm, and surface is without particle studded, surface
Quality conformance is good；Fig. 5 and Fig. 6 is the SEM for amplifying 200 times for observing wafer surface lines uniformity and scratch levels, Fig. 5
Figure, as can be seen from Figure 5 be ground after wafer surface lines uniformity, without deep scratch；Shown in Fig. 6, wafer surface wave crest and wave
Paddy beat is smaller and beat is relatively uniform, and the stable sexual deviation of wheel grinding is small, and the grinding performance of this seed type grinding wheel is very suitable to
The back side for chip is ground, and is realized excellent effect, be can get stable use parameter, therefore the preparation side of this kind of resin grinding wheel
Method can be widely applied to the grinding of soft crisp cadmium zinc telluride crystal wafer.
Through detecting, cadmium zinc telluride crystal wafer carries out fine grinding thinning back side experiment, and resin wheel obtained by embodiment 2-5 shows
Out with the comparable reconditioning effect of embodiment 1.It can be seen that resin wheel prepared by the present invention is highly suitable for cadmium zinc telluride crystal wafer
It is thinned, realizes excellent effect, can get stable use parameter.
Above-described embodiment be embodiment of the present invention for example, embodiments of the present invention not by above-described embodiment
Limitation, it is other any without departing from made changes, modifications, substitutions, combinations, simplifications under spirit of the invention and principle,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (7)
1. it is a kind of for cadmium zinc telluride crystal wafer grinding resin wheel, which is characterized in that the grinding wheel by following volume parts raw material
It is prepared: 10-20 parts of diamond, 2-5 parts of silicon carbide, 5-10 parts of coupling agent, 0.5-2 parts of pore creating material, preparing spherical SiO 2 8-
15 parts, 12-18 parts of phenolic resin；
Diamond grit is 4-6 μm；Carborundum granularity is 0.5 μm -2 μm；Preparing spherical SiO 2 is hollow structure, and intermediate value is
0.9μm；Pore creating material is expended microsphere, and model is DU152；
Coupling agent is gamma-aminopropyl-triethoxy-silane；
Phenolic resin model is PR-55730；
The resin wheel for cadmium zinc telluride crystal wafer grinding, is prepared by following steps:
(1) silicon carbide after sieving is mixed with hollow ball shape silica, obtains mixed powder I；
(2) by after alkali process diamond and coupling agent adding into acetone be ultrasonically treated 15-25min, drying, then with after sieving
Phenolic resin and pore creating material successively mix sieving, obtain mixed powder II；
(3) it is sieved after mixing the mixed powder I in step (1) with mixed powder II in step (2), obtains mixed powder III；It will
Molding mass is made in mixed powder III ball milling 1-3h, sieving；
(4) molding mass in step (3) is subjected to mold assembling, fed intake, and hot pressing circularizes, cooling, finished sand is made in demoulding
Wheel.
2. the resin wheel for cadmium zinc telluride crystal wafer grinding as described in claim 1, which is characterized in that the grinding wheel is by following bodies
The raw material of product number is prepared: 12 parts of diamond, 3 parts of silicon carbide, and 8 parts of coupling agent, 1 part of pore creating material, preparing spherical SiO 2 15
Part, 15 parts of phenolic resin, diamond grit is 4 μm, and carborundum granularity is 2 μm.
3. the resin wheel for cadmium zinc telluride crystal wafer grinding as described in claim 1, which is characterized in that the phenol in step (2)
Ball milling 72-120h before urea formaldehyde is sieved.
4. the resin wheel for cadmium zinc telluride crystal wafer grinding as described in claim 1, which is characterized in that in step (2) at alkali
Reason refers to the KOH processing with NaOH the or 10-50% mass fraction of 10-50% mass fraction under the conditions of 80-90 DEG C.
5. the resin wheel for cadmium zinc telluride crystal wafer grinding as described in claim 1, which is characterized in that corundum in step (3)
Ceramic Balls and the weight ratio of mixed powder III are 1:2 or 1:3.
6. the resin wheel for cadmium zinc telluride crystal wafer grinding as described in claim 1, which is characterized in that described in step (4)
Heat pressing process is that molding mass is warming up to 180-200 DEG C, then heat-insulation pressure keeping 1- under conditions of initial pressure 1.8-2.2Mpa
3min, then 5.8-6.2Mpa is boosted to, then circularized after heat-insulation pressure keeping 60-80min.
7. any the answering in cadmium zinc telluride crystal wafer grinding of the resin wheel for cadmium zinc telluride crystal wafer grinding of claim 1-6
With.
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| CN110405641B (en) * | 2019-07-30 | 2021-03-30 | 郑州磨料磨具磨削研究所有限公司 | Resin grinding wheel for cutting alumina ceramic substrate and preparation method thereof |
| CN111482910B (en) * | 2020-04-20 | 2021-04-02 | 西北民族大学 | Nano silicon carbide product synthesis equipment and process |
| CN113211334A (en) * | 2021-05-25 | 2021-08-06 | 郑州新亚复合超硬材料有限公司 | Self-sharpening resin binder diamond grinding wheel and preparation method thereof |
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| CN108724026A (en) | 2018-11-02 |
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