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CN108701677B - 基于多层式电路板的功率模块 - Google Patents

基于多层式电路板的功率模块 Download PDF

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Publication number
CN108701677B
CN108701677B CN201780013516.1A CN201780013516A CN108701677B CN 108701677 B CN108701677 B CN 108701677B CN 201780013516 A CN201780013516 A CN 201780013516A CN 108701677 B CN108701677 B CN 108701677B
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Prior art keywords
layer
circuit board
power module
power semiconductor
conductive
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CN201780013516.1A
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CN108701677A (zh
Inventor
F.莫汉
J.舒德勒
F.塔拉布
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ABB Grid Switzerland AG
Audi AG
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Hitachi Energy Switzerland AG
Audi AG
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract

功率模块（10）包含：至少一个功率半导体器件（15a、15b），带有在顶侧上的顶部电接触区（28b）；以及多层式电路板（12），带有多个导电层（16a、16b、18），这些导电层（16a、16b、18）通过多个电隔离层（20）而分隔，电隔离层（20）与导电层（16a、16b、18）层压在一起；其中，多层式电路板（12）具有至少一个腔（14），该腔（14）向多层式电路板（12）的顶侧开放，该腔（14）穿通至少两个导电层（16a、16b、18）；其中，功率半导体器件（15a、15b）以底侧附接到腔（14）的底部；且其中，功率半导体器件（15a、15b）通过传导部件（26a、26b）来电连接到多层式电路板（12）的顶侧，该传导部件（26a、26b）接合到顶部接触区（28b），并且，接合到多层式电路板（12）的顶侧。

Description

基于多层式电路板的功率模块
技术领域
本发明涉及功率半导体器件的装配的领域。尤其，本发明涉及基于多层式电路板的功率模块。
背景技术
在各种功率电子设备应用中，使用功率半导体器件（诸如，IGBT或功率MOSFET），以对电流进行切换或整流。重要且快速发展的应用是用于电动或混合电动汽车的转换器系统。在此应用中，由于可利用的安装体积有限，因而功率密度是对于功率电子设备转换器系统的重要要求。备选的宽带隙半导体器件（诸如，碳化硅（SiC）器件）的使用允诺在这方面的进一步的改进。
减少功率模块中的功率和信号电路的自感和互感的途径可以是，在多个竖直地堆叠的层中，导引电流。
例如，额外的载流层可以放置于衬底的顶部上。US 8 829 692 B2示出，这样的层形成于直接接合的铜衬底上。
如在DE 10 2013 015 956 A1中提出的，功率半导体器件可以完全地嵌入到印刷电路板结构中，并且可以通过铜通孔直接地接触。
这两种途径都可以具有关于其可制造性的缺点：将多个层相继地层叠通常要求额外的接合过程，并且，多个层之间的额外的交界面可能对功率模块的可靠性构成风险。
另一方面，将功率半导体器件完全嵌入在印刷电路板上要求特别的顶侧金属化，并且，考虑到最大可实现的通孔深度（且因此，绝缘厚度），用于针对顶侧接触件而钻孔通孔的过程可能受限制。
US 2014/070394 A1示出带有腔的多层式电路板，其中，半导体元件布置于该腔中。然而，在US 2014/070394 A1中，散热衬底与带有另外散热衬底的多层式电路板间隔开。
WO 98/44557 A1示出带有腔的多层式电路板，其中，半导体元件布置于该腔中。在该腔的底部处，半导体元件附接到冷却主体，该冷却主体附接到多层式电路板。
另外，从WO 2005/024946 A1、EP 0 597 144 A1、US 2003/076659 A1、US 2014/246681 A1、US 2009/039498 A1以及US 2011/127675 A1中已知功率模块。
发明内容
本发明的目标是，提供制造功率模块的容易方法，该功率模块可以具有低杂散阻抗。
通过独立权利要求的主题而达到该目标。另外的示范性实施例根据从属权利要求和下文的描述而变得明显。
本发明涉及一种功率模块。功率模块可以视为如下的器件：其包含一个或多个功率半导体器件（诸如，二极管、晶体管、晶闸管），连同另外的部件，该部件机械地支撑这些器件，且使这些器件电互连。功率半导体模块以及功率半导体器件可以适应于对超过10 A和/或超过100 V的电流进行处理。
根据本发明的实施例，功率模块包含至少一个功率半导体器件，该功率半导体器件带有在顶侧上的顶部电接触区和任选地在底侧上的底部电接触区。功率半导体器件可以是半导体芯片，或可以包含半导体芯片，且/或可以包含晶体管、二极管、晶闸管等。尤其，功率半导体器件可以是SiC器件（例如，处于高达1.2 kV的功率范围内），其可以特别适合于汽车的应用。
功率半导体器件可以包含扁平主体，该扁平主体提供在顶侧上或在对立的顶侧和底侧上的电接触区（诸如，漏极和/或源极区）。必须注意到的是，术语“底侧”和“顶侧”并非指定相对于地表的方向，而只不过描述对立的两侧。
功率模块还包含多层式电路板，该多层式电路板带有多个导电层，这些导电层通过多个电隔离层而分隔。电隔离层可以基于与导电层一起层压的塑料材料（诸如，预浸材料）。多层式电路板（其可以视为印刷电路板）可以由多个导电层和电隔离层组装，其中，已在一个步骤中，将导电层和电隔离层联结在一起。例如，提供传导路径的导电结构化层可以与预浸材料（诸如，以环氧树脂浸渍的纤维垫（fibre mat））交错，且然后，在加热时按压在一起，以形成多层式电路板。
多层式电路板具有至少一个腔，该腔向多层式电路板的顶侧开放，该腔穿通至少两个导电层。例如，通过在多层式电路板的特定的层中，提供对应的开口，且/或通过从已经形成的多层式电路板中切割腔，从而可以生成腔。腔可以具有壁部，该壁部针对于多层式电路板的延伸部而大体上正交地延伸，且/或腔可以具有底部，该底部大体上平行于多层式电路板的延伸部而延伸。
此外，功率半导体器件附接到腔的底部。例如，功率半导体器件可以接合到腔的底部。术语“接合”可以指适应于将器件或金属化部件与金属化层机械地连接且电连接的任何过程。关于这样的过程的示例为焊接或烧结。
功率半导体器件在其另一侧，与额外的传导部件（诸如，接合引线（wirebond）和/或金属条带）电连接。尤其，功率半导体器件电连接到多层式电路板的顶侧，其中，传导部件以第一端接合（诸如，焊接、烧结和/或焊缝）到顶部接触区，且以第二端接合（诸如，焊接、烧结和/或焊缝）到多层式电路板的顶侧。多层式电路的顶侧可以提供金属层，然后，该金属层使功率半导体器件与功率模块的端子互连。
由于针对多个导电层的复杂的层叠过程并非必要，因而功率模块可以容易制造。可以由多层式电路板提供复杂的电流导引，该多层式电路板可以更容易地制造。在多层式电路板中，仅必须将功率半导体器件接合，随后，可以经由另外传导部件而将功率半导体器件容易地连接到电路板的顶侧。仅少数量的制造步骤可以是必要的步骤，其可以在很大程度上自动化（拾取和放置、引线接合等）。
另外，功率模块可以具有有益的电性质。由于可以通过在多层式电路板中的多个层中导引电流而节省衬底区，因而功率模块可以具有高功率密度。此外，由于将导电路径布置于多层式电路板的多个导电层中的高自由度，因而功率模块可以具有低的杂散阻抗和耦合性。
根据本发明的实施例，至少一个功率半导体器件包含在底侧上的底部电接触区，其中，功率半导体器件以底部接触区接合到腔的底部。以这样的方式，功率半导体器件的不同侧上的电接触区可以与多层式电路板电连接。在顶侧上利用接合引线或其它传导部件来实现电连接，在底侧上通过接合过程而实现电连接。
根据本发明的实施例，功率模块还包含在多层式电路板的底侧处提供的导电底层，其中，腔穿通多层式电路板而到达底层。底层还可以提供腔的底部，即，腔可以不完全地穿通多层式电路板。在这种情况下，可以将功率半导体器件以底部接触区接合到底层。
根据本发明的实施例，底层是多层式电路板的一部分。多层式电路板的最外面的底层可以是金属层，即，底层可以是多层式电路板的组成整体的部分。底层可以用于将多层式电路板接合到另外金属衬底，该金属衬底例如可以用作冷却器。
金属衬底可以是直接接合的铜衬底、绝缘金属衬底或陶瓷衬底。
也许还有可能是，由金属衬底提供底层，该底层形成多层式电路板的组成整体的一部分。在多层式电路板的形成过程的期间，可以已将金属衬底包括到多层式电路板中。
根据本发明的实施例，底层接合到多层式电路板，其中，底层提供腔的底部，并且，半导体器件接合到底层。也可能是，在多层式电路板的形成过程之后，底层附接到多层式电路板。例如，底层可以接合到由多层式电路板提供的金属化层（在多层式电路板的形成过程之后）。在这种情况下，腔可以完全地穿通多层式电路板，即，腔可以是相对于多层式电路板的穿孔。
根据本发明的实施例，底层是绝缘金属衬底的一部分，该绝缘金属衬底包含底层和另外金属层，该另外金属层通过绝缘层而与底层隔离，或者底层是陶瓷衬底的一部分，该陶瓷衬底包含底层，该底层附接到陶瓷层。如已经提及的，该另外金属衬底可以集成到多层式电路板中，或可以接合到多层式电路板。
根据本发明的实施例，至少两个带有腔的多层式电路板附接到共同的（金属）衬底，其中，功率半导体器件接合于该腔中。至少两个多层式电路板中的各个可以如上文和下文中所描述那样设计。同样地，至少两个多层式电路板可以同样地设计，并且，可以在一个功率模块中的一个衬底上，提供两个、三个或更多个同样设计的电路（诸如，半桥）。
可以通过接合引线使至少两个多层式电路板的顶侧电互连，例如，以便使在不同的多层式电路板中提供的栅极层互连。以这样的方式，可以由功率模块提供仅一个栅极端子（即使两个或更多个电路并联连接）。
根据本发明的实施例，底层或附接到底层的金属层具有用于冷却的结构化底面。底层可以是集成到多层式电路板中或接合到多层式电路板的金属层。金属层可以是由带有两个隔离的金属层的金属衬底提供的金属层，其中，两个隔离的金属层集成到多层式电路板中，或接合到多层式电路板。结构化底面可以包含鳍部和/或柱部，其扩大功率模块的有效冷却表面。也许还有可能的是，在结构化底面中，提供（液体）冷却通道。
一般而言，功率模块可以包含多层式电路板，其带有集成或接合的金属衬底。功率模块可以易于以低成本制造。例如，当在多层式电路板的制造方面已经将金属衬底集成时，在模块制造方面的组装过程可以基本上仅包含模具附接、引线接合、功率和辅助端子附接（仅在端子未集成到多层式电路板（以及可选地，模具封装）中的情况下）。可以在大面板制造过程中，执行该制造，其中，该过程可以很好地适合于针对成本敏感的汽车市场的大量生产。
当多层式电路板的隔离层（诸如，基于预浸的层）、金属衬底以及可选的电隔离模具封装（诸如，环氧树脂）与铜进行CTE（热膨胀系数）匹配时，功率模块可以达到高可靠性。然后，仅一个或多个功率半导体器件可以具有显著地不同的热膨胀系数，但这对于SiC半导体器件，可能是不那么关键的，SiC半导体器件通常具有比Si半导体器件更小的芯片面积。同样地，与其它类型的功率模块相比，可以减少接合的接触区的数量，这还可以改进可靠性。例如，当直接地使底层冷却时，对于每个半导体器件，在半导体器件与底层之间，可以仅存在一个烧结的接触区。
根据本发明的实施例，功率半导体器件完全地接纳于腔中，即，功率半导体器件的顶侧未从腔突出。因而，功率半导体器件上方的空间可以用于布线，而无需进一步增加功率模块的高度。
根据本发明的实施例，至少一个功率半导体器件具有在顶侧上的栅极接触区，该栅极接触区电连接到多层式电路板的顶侧。可能的是，一个功率半导体器件是功率半导体开关，其栅极经由多层式电路板中的金属层而与功率模块的栅极端子互连。
根据本发明的实施例，多层式电路板包含至少两个腔，其中，至少两个功率半导体器件以其底侧附接（例如，接合）到腔的底部。因而，多层式电路板可以针对不止一个功率半导体器件，提供与功率模块的端子的电连接。可能的是，每个功率半导体器件定位于单独的腔中，或两个或更多个功率半导体器件（诸如，开关和反并联续流二极管）定位于一个腔中。
根据本发明的实施例，功率半导体器件经由作为传导部件的接合引线而电连接到多层式电路板的顶侧。例如，接合引线可以接合到功率半导体器件的顶部接触区，且接合到由多层式电路板的顶侧提供的金属层。也可能的是，功率半导体器件经由作为传导部件的金属条带而电连接到多层式电路板的顶侧。金属条带可以是折叠式部件，其可以比接合引线的引线更刚硬。
根据本发明的实施例，金属缓冲层接合到功率半导体器件的顶部接触区，并且，传导部件接合到金属缓冲层，其中，该传导部件使顶部接触区与多层式电路板的顶侧互连。金属缓冲层可以是金属块，其可以比其所接合到的功率半导体器件的电接触区要更厚得多（诸如，10倍更厚）。这样的金属缓冲层可以改进接合引线互连，且/或可以使热更均匀地分布于功率半导体器件中。
根据本发明的实施例，多层式电路板包含第一导电层和第二导电层，第一导电层和第二导电层电连接到功率半导体器件的顶部接触区和底部接触区。第一层和第二层可以提供第一端子与功率半导体器件之间以及第二端子与功率半导体器件之间的电流路径。必须注意到，第一和第二层可以分成多部分，在相应的层中，这些部分彼此电隔离。可以通过通孔来使这些部分与其它层的其它部分互连。此外，当功率模块运作时，一个层的多部分可以电连接到不同的端子，即，可以具有不同的电势。
此外，在功率半导体开关的情况下，一个或多个栅极层可以由多层式电路板提供。
当第一层、第二层和/或栅极层的导电部分彼此大体上重叠，且/或延伸遍布多层式电路板的基极区的大部分时，这可以通过在多个层中导引电流，从而通过节省功率模块的占据面积，导致低电感的电流路径、大大地降低的栅极电感和栅极/功率电路耦合性以及提高的功率密度。
根据本发明的实施例，第一导电层和第二导电层（的导电部分）在至少超过10%的多层式电路板的顶侧或底侧的面积中彼此重叠。多层式电路板的顶侧或底侧的面积（通常相等）可被视为多层式电路板的基极区。大体上重叠可以意味着，当从与多层式电路板的顶侧和/或底侧的延伸部正交的方向观察时，超过10%的传导层的面积重叠。
在多个重叠层中导引的电流可以允许降低模块内部寄生电感。例如，当引导DC-端子之间的电流并行通过近距离的第一和第二传导层时，可以显著地降低换向环路(commutation loop)杂散电感。
根据本发明的实施例，第一导电层和/或第二导电层（的导电部分）延伸遍布超过50%的多层式电路板的顶侧或底侧的面积。当第一和/或第二导电层横向地延伸遍布多层式电路板的基极区的相当大的部分时，这还可能导致低电感互连。
同样地，一个或多个栅极层（的导电部分）可以延伸遍布超过50%的多层式电路板的顶侧或底侧的面积。
根据本发明的实施例，第一导电层和/或第二导电层比第三导电栅极层更厚，该第三导电栅极层与功率半导体器件的栅极接触区电互连。也许有可能是，一个或多个栅极层比电流传导层更薄，因而降低多层式电路板的高度。
此外，一个或多个栅极层可以重叠达到超过10%的第一和/或第二传导层的面积。与常规的功率模块相比，用于导引栅极信号的大面积栅极层还可以降低栅极与功率电路之间的栅极电感和耦合电感。
根据本发明的实施例，多层式电路板的导电层（诸如，第一层、第二层和/或栅极层）通过传导通孔而互连，该传导通孔延伸穿过与导电层正交的多层式电路板。例如，可以竖直地延伸的这些通孔可以是延伸穿过传导层之间的隔离层的柱部或其它结构。也许有可能的是，通孔使相邻的导电层互连和/或使以不止一个导电层间隔开的导电层互连。也许还有可能的是，通孔从顶侧到底侧穿通或仅部分地穿通多层式电路板。
根据本发明的实施例，功率模块包含至少两个功率半导体开关，这些功率半导体开关通过多层式电路板的导电层、底层（其可以是多层式电路板的一部分）以及传导部件而电互连，以形成半桥。此外，功率模块可以包含续流二极管，该续流二极管反并联地连接到一个或多个功率半导体开关。（一个或多个）功率半导体开关和续流二极管可以定位于多层式电路板的腔中（如上文和下文中所描述）。
根据本发明的实施例，用于连接模块的外部连接件的端子直接地接合到多层式电路板的顶侧，且/或作为多层式电路板的一部分。例如，这些端子（其可以是用于DC-、DC+、AC电流和/或栅极信号的端子）可以由金属条带提供，金属条带接合到由多层式电路板的顶层提供的相应的电接触区。
根据本发明的实施例，腔中的多层式电路板和功率半导体器件封装到塑料材料中。例如，可以使用环氧模具化合物来至少部分地封装功率模块。多层式电路板的顶侧、其两侧以及尤其腔和传导部件可以完全被封装。也许有可能的是，仅端子和/或冷却表面从封装件突出。这样的电隔离且/或机械地稳定化的封装件可以提升接合引线寿命。
本发明的这些方面及其它方面将参考下文中所描述的实施例而被阐明，以及根据这些实施例将变得明显。
附图说明
将参考附图中所图示的示范性的实施例，在下文的文本中更详细地解释本发明的主题。
图1示意性地示出贯穿根据本发明的实施例的功率模块的截面。
图2示意性地示出贯穿根据本发明的另外实施例的功率模块的截面。
图3示意性地示出到根据本发明的另外实施例的功率模块上的顶视图。
图4示出根据本发明的实施例的功率模块的电路图。
图5示意性地示出根据本发明的另外实施例的功率模块的透视图。
在参考符号列表中，以概要的形式列出附图中所使用的参考符号及其含义。原则上，在附图中，为同一零件提供相同参考符号。
具体实施方式
图1示出功率模块10，功率模块10包含多层式电路板12，多层式电路板12包含腔14，在腔14中提供功率半导体器件15a、15b（例如，SiC MOSFET）。
多层式电路板12包含三个厚层16a、16b、16c（大约300 µm 厚）和两个薄层18（比厚层16a、16b、16c更薄，大约75 µm 厚），两个薄层18中的各个位于两个厚层16a、16b、16c之间。厚层16a、16b、16c用于导引电流通过功率模块10。薄层18用于导引栅极信号通过功率模块10。
在层16a、16b、16c、18之间，多层式电路板12包含隔离层20，隔离层20基于预浸材料（诸如，纤维加强环氧树脂）。多层式电路板12的所有的层16a、16b、16c、18、20都已通过在受热的情况下按压而联结/层压在一起，以形成多层式电路板12。导电层16a、16b、16c、18通过通孔22而电互连，通孔22穿通电隔离层20。层16a、16b、16c、18和通孔22可以由Cu制成。
各个腔14可以突出穿过至少两个导电层16a、16b、18和/或至少两个隔离层20。腔14的侧壁可以基本上竖直地（即，与层16a、16b、16c、18、20的延伸部正交地）延伸。腔14的侧壁可以覆盖有来自隔离层20的隔离材料。
顶层16a为DC+端子24a、DC-端子24b、AC端子24c以及一个或多个栅极端子（未示出）提供接触区。这些端子24a、24b、24c可以接合到顶层16a，且/或可以由折叠式金属条带提供。
端子24a、24b、24c（以及栅极端子）（这些端子用作功率模块10的外部功率连接件）可以作为用于螺钉连接件和/或压入销（press-in pin）和/或引线框（lead frame）结构的端子而提供。端子24a、24b、24c（以及栅极端子）可以直接地附接到多层式电路板12，或集成到多层式电路板12中。
功率端子24a、24b、24c可以从如图1中所示出的多层式电路板12竖直地（即，沿与层16a、16b、16c、18、20的延伸部大体上正交的方向）伸出。备选地，功率端子24a、24b、24c可以朝向功率模块10的两侧水平地（即，沿与层16a、16b、16c、18、20的延伸部大体上平行的方向）伸出。可以在功率模块10的一侧上提供DC-端子24b和DC+端子24a，并且，在功率模块10的对立的一侧上提供AC端子24c。在这种情况下，功率模块10可以是扁平的，并且，可以在功率模块10的顶侧上留下足够的空间以便用于栅极驱动电路板的附接。
栅极端子还可以从多层式电路板12（例如，使用销或插槽来连接到栅极驱动电路板）竖直地伸出，或还使用引线框结构来水平地伸出。
功率端子24a、24b、24c和/或栅极端子通过焊接、烧结或焊缝而附接到顶层16a。也许还有可能的是，在多层式电路板12的制造的期间，已经使功率端子24a、24b、24c和/或栅极端子集成。
底层16c提供腔14的底部，例如通过Ag烧结，将功率半导体器件15a、15b以底侧接合到腔14的底部。经由采取接合引线26a的形式的传导部件，将功率半导体器件15a、15b的顶侧电连接到多层式电路板12的顶侧。
尤其，各个半导体器件15a、15b的底侧提供底部接触区28a（提供半导体器件15a、15b的源极），底部接触区28a接合到底层16c。各个半导体器件15a、15b的顶侧提供顶部接触区28b（提供半导体器件15a、15b的漏极）和栅极接触区28c。经由多个接合引线26a，顶部接触区28b与由顶层16a提供的对应的接触区电连接。经由一个接合引线26a，栅极接触区28c与由顶层16a提供的对应的接触区电连接。
功率半导体器件15a、15b完全地接纳于其相应的腔14中，即，其顶侧不突出超过多层式电路板12的顶侧。
在图1中，底层16c是多层式电路板12的组成整体的部分。因而，腔14未完全地穿通多层式电路板12。
底层16c可以经由另外隔离层30而附接到基底金属层32，基底金属层32可以用于支撑功率模块10，且/或用于使功率半导体器件15a、15b冷却。
也许有可能的是，在多层式电路板12的制造之后，隔离层30和基底金属层32与多层式电路板12联结。然而，也许还有可能的是，底层16c、隔离层30和基底金属层32由隔离金属衬底34提供，在多层式电路板12的制造的期间，隔离金属衬底34集成到多层式电路板12中，即，与多层式电路板12联结。
也许还有可能的是，使陶瓷衬底集成到多层式电路板12中。
图1还示出多层式电路板12的组装，层30、32以及端子24a、24b、24c可以包覆到塑料材料外壳36中，塑料材料外壳36可以基于环氧模制化合物。外壳36可以仅使基底金属层32暴露以用于冷却和/或使端子/销24a、24b、24c暴露以用于外部连接。环氧模制模块10可以提供良好的机械稳健性以及足够温度能力和抵抗在恶劣条件下进水的保护。
图2示出功率模块10，其中，多层式电路板12仅包含厚层16a、16b、薄层18以及其间的隔离层20。底层16c由隔离金属衬底34提供，在多层式电路板12的制造之后，隔离金属衬底34已接合到多层式电路板12。
图2还示出对于作为传导部件的接合引线26a的备选方案，接合引线26a可以是Al、Cu或Ag接合引线。功率半导体器件15a（以及同样地，15b）的顶侧和顶部电接触区28b可以接合到金属条带26b，在多层式电路板12的顶侧上，金属条带26还接合到由顶层16a提供的对应的接触区。金属条带26b可以是Cu、Al或Ag条带/夹（clip），其焊接或烧结到顶部接触区28b和到由顶层16a提供的对应的接触区。
此外，金属缓冲层38可以接合到顶部接触区28b。传导部件26a、26b可以接合到该金属缓冲层38。金属缓冲层38可以接合到已经在晶圆级别上的对应的功率半导体器件15a、15b。这样的金属缓冲层38可以提高接合引线26a的功率循环能力，并且，可以在功率半导体器件15a、15b的顶侧上提供额外的热质量。
如图2中所示出的，可以使基底金属层32结构化，以便提供功率模块10的冷却表面。功率半导体器件15a、15b可以经由底层16c而与基底金属层32处于良好的热接触。底层16c仅可以通过薄隔离层30而针对于基底金属Cu或Ag 层32绝缘。隔离层30可以基于热预浸，且/或可以具有大约100 um的厚度。绝缘层30的导热性可以是大约10 W/mK，这意味着，在热性能的方面，这样的绝缘金属衬底34甚至可以与陶瓷衬底媲美。
图3从上方示出功率模块10。例如，来自图1的功率模块10可以具有这样的顶侧。图3示出，顶层16a分成若干电断开的部分，这些部分提供用于端子24a、24b、24c的接触区以及用于顶部接触区28b和栅极接触区28c的传导部件26a、26b（接合引线和/或金属条带）。此外，在图3中示出用于栅极端子的接触区40。
同样地，其它层16b、16c、18可以包含这样的断开部分，这些部分通过隔离材料而分隔，该隔离材料基于用于形成多层式电路板的预浸材料。
如图3中所示出的，层16a、16b、16c的导电部分可以延伸遍布多层式电路板12的基极区的大范围，例如，遍布超过基极区的50%。
半导体器件15a、15b可以通过厚层16a、16b、16c而电互连以形成半桥（参见下面图4），其承载为端子24a、24b、24c提供的DC+、AC和DC-电势。为了确保充分的载流能力，层16a、16b、16c可以是厚度为大约300 µm的厚Cu层。为了确保低电感电流路径，载流层24a、24b、24c形成为平面层，其延伸遍布基极区的尽可能大的部分。以这种方式，例如，由层24a、24b、24c提供的DC-部分在与层24a、24b、24c的DC+部分平行（例如，以仅大约1 mm的距离）的大面积中延伸。
此外，DC-端子24b可以布置成以条带线的方式接近于DC+端子24a。
这可以确保功率模块10的低换向环路杂散电感。同样地，栅极层18的部分还可以在与层16a、16b、16c平行的大面积中蔓延。该大面积的平面栅极层途径还可以确保低栅极电感，并且，可以降低层16a、16b、16c中的电流与栅极信号之间的耦合性。
应当注意到，可以例如针对额外的信号（诸如，来自电流传感器的信号或芯片上的温度），添加另外的传导层。
图4示出，可以使半导体器件15a、15b（MOSFET）电互连，以形成半桥。同样地，可以使续流二极管42反并联互连到半导体器件15a、15b。这些续流二极管42可以由半导体器件15a、15b的芯片提供，或可以在腔14中提供，其中，腔14以一侧接合到底层16c，并且，经由传导部件26a、26b与多层式电路板12的顶侧电连接。然后，层16a、16b、16c可以提供续流二极管42与半导体器件15a、15b之间的电连接。
图5示出功率模块10，功率模块10包含两个多层式电路板12，这两个多层式电路板12接合到相同陶瓷衬底44，陶瓷衬底44可以包含底层16c、陶瓷层30’以及基底金属层32，基底金属层32可以用于冷却。在图5中，陶瓷衬底44提供两个电隔离的底层16c。
如图5中所示出的，当功率模块10包含由多层式电路板12提供的多个并联半桥时，接合引线26a可以用于将栅极信号从一个多层式电路板12导引至另一个多层式电路板12，并且，每一低侧和高侧可以仅需要一个栅极端子24d。
虽然在附图和前文的描述中，详细地图示且描述了本发明，但这样的图示和描述将被认为是说明性的或示范性的且非限制性的；本发明不限于所公开的实施例。通过研究附图、公开以及所附权利要求，熟知本领域并且实践要求保护的发明的技术人员能够理解且实施对于所公开的实施例的其它变型。在权利要求中，单词“包含”不排除其它元件或步骤，并且，不定冠词“一”或“一个”不排除多个。单个处理器或控制器或其它单元可以实现权利要求中所叙述的若干项的功能。仅仅在互不相同的从属权利要求中叙述某些措施这一事实不指示这些措施的组合不能用于获得优势。权利要求中的任何参考符号都不应当被解释为限制该范围。
参考符号列表
10 功率模块
12 多层式电路板
14 腔
15a 功率半导体器件
15b 功率半导体器件
16a 顶层
16b 中间层
16c 底层
18 栅极层
20 隔离层
22 通孔
24a DC+端子
24b DC-端子
24c AC端子
24d 栅极端子
26a 传导部件（接合引线）
26b 传导部件（金属条带）
28a 底部接触区
28b 顶部接触区
28c 栅极接触区
30 隔离层
32 基底金属层
34 隔离金属衬底
36 外壳
38 金属缓冲层
40 栅极接触区
42 续流二极管
44 陶瓷衬底。

Claims (15)

1.一种功率模块(10)，包含：
至少一个功率半导体器件(15a、15b)，带有在顶侧上的电气顶部接触区(28b)；
多层式电路板(12)，带有多个导电层(16a、16b、18)，所述导电层(16a、16b、18)通过多个电隔离层(20)而分隔，所述电隔离层(20)与所述导电层(16a、16b、18)层压在一起；
其中，所述多层式电路板(12)具有至少一个腔(14)，所述腔(14)向所述多层式电路板(12)的顶侧开放，所述腔(14)穿通至少两个导电层(16a、16b、18)；
导电底层(16c)，所述导电底层(16c)在所述多层式电路板(12)的底侧处提供；其中，所述功率半导体器件(15a、15b)通过传导部件(26a、26b)来电连接到所述多层式电路板(12)的顶侧，所述传导部件(26a、26b)接合到所述电气顶部接触区(28b)，并且接合到所述多层式电路板(12)的所述顶侧；
其中，所述腔(14)穿通所述多层式电路板(12)而到达所述底层(16c)；
其中，所述功率半导体器件(15a、15b)以底部接触区(28a)接合到所述底层(16c)；
其中，所述底层(16c)是绝缘金属衬底(34)的一部分，所述底层(16c)形成所述多层式电路板(12)的组成整体的部分，所述绝缘金属衬底(34)包含所述底层(16c)和另外金属层(32)，所述另外金属层(32)通过隔离层(30)而与所述底层(16c)隔离。
2.根据权利要求1所述的功率模块(10)，
其中，所述底层(16c)是陶瓷衬底(44)的一部分，所述陶瓷衬底(44)包含所述底层(16c)，所述底层(16c)附接到陶瓷层(30’)。
3.根据前述权利要求中的任一项所述的功率模块(10)，
其中，至少两个带有腔(14)的多层式电路板(12)附接到共同的衬底(44)，其中功率半导体器件(15a、15b)接合于所述腔(14)中。
4.根据权利要求1或2所述的功率模块(10)，
其中，所述底层(16c)或附接到所述底层(16c)的金属层(32)具有用于冷却的结构化底面。
5.根据权利要求1或2所述的功率模块(10)，
其中，所述功率半导体器件(15a、15b)完全地接纳于所述腔(14)中。
6.根据权利要求1或2所述的功率模块(10)，
其中，所述至少一个功率半导体器件(15a、15b)在所述顶侧上具有栅极接触区(28c)，所述栅极接触区(28c)通过传导部件(26a、26b)来电连接到所述多层式电路板(12)的所述顶侧。
7.根据权利要求1或2所述的功率模块(10)，
其中，所述多层式电路板(12)包含至少两个腔(14)，其中，至少两个功率半导体器件(15a、15b)以底侧附接到所述腔(14)的所述底部；以及/或
其中，每个功率半导体器件(15a、15b)定位于单独的(14)腔中。
8.根据权利要求1或2所述的功率模块(10)，
其中，所述功率半导体器件(15a、15b)经由作为传导部件的接合引线(26a)而电连接到所述多层式电路板(12)的所述顶侧；以及/或
其中，所述功率半导体器件(15a、15b)经由作为传导部件的金属条带(26b)而电连接到所述多层式电路板(12)的所述顶侧。
9.根据权利要求1或2所述的功率模块(10)，
其中，金属缓冲层(38)接合到所述功率半导体器件(15a、15b)的所述电气顶部接触区(28b)，并且，使所述电气顶部接触区与所述多层式电路板的所述顶侧互连的所述传导部件(26a、26b)接合到所述金属缓冲层(38)。
10.根据权利要求1或2所述的功率模块(10)，
其中，第一导电层(16a)和第二导电层(16b)电连接到所述电气顶部接触区(28b)，并且，所述功率半导体器件(15a、15b)的所述底部接触区(28a)在至少超过10％的所述多层式电路板(12)的所述顶侧或底侧的面积中彼此重叠；以及/或
其中，所述第一导电层(16a)和/或所述第二导电层(16b)延伸遍布超过50％的所述多层式电路板(12)的所述顶侧或底侧的所述面积。
11.根据权利要求6所述的功率模块(10)，
其中，电连接到所述功率半导体器件(15a、15b)的电气顶部接触区(28b)和/或底部接触区(28a)的第一导电层(16a)和/或第二导电层(16b)比第三导电层(18)要更厚，所述第三导电层(18)与所述功率半导体器件(15a、15b)的栅极接触区(28c)电互连。
12.根据权利要求1或2所述的功率模块(10)，
其中，所述多层式电路板(12)的导电层(16a、16b、18)通过传导通孔(22)而互连，所述传导通孔(22)与所述导电层正交地延伸穿过所述多层式电路板(12)。
13.根据权利要求1或2所述的功率模块(10)，
其中，所述功率模块(10)包含至少两个功率半导体器件(15a、15b)，所述功率半导体器件是功率半导体开关并且通过所述多层式电路板(12)的所述导电层(16a、16b、18)、底层(16c)以及传导部件(26a、26b)而电互连，从而形成半桥。
14.根据权利要求1或2所述的功率模块(10)，
其中，用于连接所述功率模块(10)的外部连接件的端子(24a、24b、24c)直接地接合到所述多层式电路板(12)的所述顶侧，且/或作为所述多层式电路板(12)的一部分。
15.根据权利要求1或2所述的功率模块(10)，
其中，所述多层式电路板(12)和所述腔(14)中的所述功率半导体器件(15a、15b)封装到塑料材料(36)中。
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