CN108694364A - A kind of fingerprint acquisition device and preparation method thereof - Google Patents
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Abstract
本发明实施例提供了指纹采集装置及其制备方法,该装置包括:由下至上依次连接的基底、二维材料阵列层及柔性保护层;基底包括衬底层、底电极层和绝缘阵列层;二维材料阵列层成型在绝缘阵列层上表面,通过绝缘阵列层上的通孔与底电极层连接,底电极层和二维材料阵列层分别和基板电连接,构成多个检测回路。该方法包括:在衬底层上形成底电极层,底电极层上形成带有多个通孔的绝缘阵列层,通孔的一侧形成连接电极层,连接电极层和绝缘阵列层上形成多个二维材料单元,二维材料单元两端分别与连接电极层和顶电极层连接,底电极层和顶电极层分别与预设的基板电连接;在该装置的表面覆盖柔性保护层。本发明实施例提高了指纹识别的准确性和效率。
Embodiments of the present invention provide a fingerprint collection device and a preparation method thereof, the device comprising: a base, a two-dimensional material array layer and a flexible protective layer connected sequentially from bottom to top; the base includes a substrate layer, a bottom electrode layer and an insulating array layer; two The three-dimensional material array layer is formed on the upper surface of the insulating array layer, and is connected to the bottom electrode layer through the through holes on the insulating array layer, and the bottom electrode layer and the two-dimensional material array layer are respectively electrically connected to the substrate to form multiple detection circuits. The method includes: forming a bottom electrode layer on the substrate layer, forming an insulating array layer with a plurality of through holes on the bottom electrode layer, forming a connecting electrode layer on one side of the through holes, forming a plurality of connecting electrode layers and the insulating array layer A two-dimensional material unit, two ends of the two-dimensional material unit are respectively connected to the connection electrode layer and the top electrode layer, and the bottom electrode layer and the top electrode layer are respectively electrically connected to the preset substrate; the surface of the device is covered with a flexible protective layer. The embodiments of the present invention improve the accuracy and efficiency of fingerprint identification.
Description
技术领域technical field
本发明实施例涉及图像采集技术领域,具体涉及一种指纹采集装置及其制备方法。Embodiments of the present invention relate to the technical field of image acquisition, and in particular to a fingerprint acquisition device and a preparation method thereof.
背景技术Background technique
随着电子信息技术的发展,电子产品的普及,一些电子产品(尤其是手机和电脑)中的个人资料以及信息的安全性越来越受到关注。目前常见的验证手段包括密码验证,图形验证等,即输入特定的字符串组合,或者输入特定的图形到这些电子产品中,若输入值与预定值相同,则达到了验证用户身份的目的。With the development of electronic information technology and the popularization of electronic products, the security of personal data and information in some electronic products (especially mobile phones and computers) has attracted more and more attention. Currently common verification methods include password verification, graphic verification, etc., that is, input a specific character string combination, or input a specific graphic into these electronic products. If the input value is the same as the predetermined value, the purpose of verifying the user's identity has been achieved.
最近几年逐渐出现了生物识别等身份认证手段,即通过检测人身上的特定生物特征,例如指纹、声纹、虹膜等,来鉴定用户身份的合法性。现行的指纹识别技术主要分为三种,光学检测、电容检测和超声波检测。光学检测通过照射光在手指表面获取表面纹路的灰度图像,这一技术虽然比较成熟、廉价,但是其设备体积大,对手的洁净程度有较高要求;电容检测通过手指纹路与硅传感器之间的不同的电容差获得了纹路的灰度图像,这一技术克服了光学检测设备体积大的缺陷,实现了集成于智能手机中的目标,但是依然对手指的洁净程度有较高要求,检测的可靠性依然不高;超声波检测利用超声波在不同物质界面产生不同大小的回波来检测指纹脊和谷的位置,这一技术同样具有较小的体积,在一定程度上降低了对手指洁净程度的要求,但是其采集时间相对较长,降低了指纹识别的效率。In recent years, identity authentication methods such as biometrics have gradually emerged, that is, by detecting specific biological characteristics on a person, such as fingerprints, voiceprints, and irises, to identify the legitimacy of a user's identity. The current fingerprint identification technology is mainly divided into three types, optical detection, capacitance detection and ultrasonic detection. Optical detection obtains the grayscale image of the surface texture by irradiating light on the surface of the finger. Although this technology is relatively mature and cheap, the equipment is large in size and has high requirements for the cleanliness of the opponent; The grayscale image of the texture is obtained by different capacitance differences. This technology overcomes the defect of large volume of optical detection equipment and realizes the goal of integrating in smart phones. However, it still has high requirements for the cleanliness of fingers. Reliability is still not high; ultrasonic detection uses ultrasonic waves to generate different sizes of echoes at different material interfaces to detect the position of fingerprint ridges and valleys. This technology also has a small size, which reduces the impact on finger cleanliness to a certain extent. Requirements, but its acquisition time is relatively long, which reduces the efficiency of fingerprint identification.
因此,如何提出一种方案,能够指纹识别的准确性和效率,成为亟待解决的问题。Therefore, how to propose a solution that can achieve the accuracy and efficiency of fingerprint identification has become an urgent problem to be solved.
发明内容Contents of the invention
针对现有技术中的缺陷,本发明实施例提供了一种指纹采集装置及其制备方法。Aiming at the defects in the prior art, the embodiment of the present invention provides a fingerprint collection device and a preparation method thereof.
一方面,本发明实施例提供一种指纹采集装置,包括:On the one hand, an embodiment of the present invention provides a fingerprint collection device, including:
所述装置包括:由下至上依次设置的基底、二维材料阵列层及柔性保护层;The device includes: a substrate, a two-dimensional material array layer and a flexible protective layer arranged sequentially from bottom to top;
所述基底包括由下至上依次设置的衬底层、底电极层和绝缘阵列层,所述绝缘阵列层上设置有多个通孔;The base includes a substrate layer, a bottom electrode layer and an insulating array layer arranged sequentially from bottom to top, and a plurality of through holes are arranged on the insulating array layer;
所述二维材料阵列层成型在所述绝缘阵列层远离所述底电极层的一面,并通过所述通孔与所述底电极层连接,所述底电极层以及所述二维材料阵列层分别和所述装置外部的基板电连接,构成多个检测回路;The two-dimensional material array layer is formed on the side of the insulating array layer away from the bottom electrode layer, and connected to the bottom electrode layer through the through hole, the bottom electrode layer and the two-dimensional material array layer are respectively electrically connected to the substrates outside the device to form a plurality of detection circuits;
所述检测回路用于采集所述二维材料阵列层因受到压力产生不同形变对应的电阻变化,以获取指纹纹路的灰度图像。The detection circuit is used to collect resistance changes corresponding to different deformations of the two-dimensional material array layer due to pressure, so as to obtain grayscale images of fingerprint lines.
进一步地,所述二维材料阵列层包括连接电极层、顶电极层和二维材料层,所述连接电极层通过所述通孔与所述底电极层连接,且所述连接电极层与所述通孔的侧壁之间留有间隙;Further, the two-dimensional material array layer includes a connection electrode layer, a top electrode layer and a two-dimensional material layer, the connection electrode layer is connected to the bottom electrode layer through the through hole, and the connection electrode layer is connected to the bottom electrode layer. A gap is left between the side walls of the through holes;
所述二维材料层包括多个二维材料单元,多个所述二维材料单元成型在所述连接电极层和所述绝缘阵列层远离所述底电极层的一面,且所述二维材料单元一端连接所述连接电极层,另一端连接所述顶电极层,所述顶电极层与所述装置外部的基板电连接,所述顶电极层与所述底电极层构成多个所述检测回路。The two-dimensional material layer includes a plurality of two-dimensional material units, and the plurality of two-dimensional material units are formed on the side of the connecting electrode layer and the insulating array layer away from the bottom electrode layer, and the two-dimensional material One end of the unit is connected to the connection electrode layer, the other end is connected to the top electrode layer, the top electrode layer is electrically connected to the substrate outside the device, and the top electrode layer and the bottom electrode layer constitute a plurality of the detection circuit.
进一步地,所述二维材料单元覆盖在所述通孔上方或所述连接电极层和所述绝缘阵列层的上表面。Further, the two-dimensional material unit covers above the through hole or the upper surface of the connecting electrode layer and the insulating array layer.
进一步地,所述底电极层条状成型在所述衬底层的上表面,相应的,所述绝缘阵列层上所述通孔设置在与所述底电极层对应的位置处。Further, the bottom electrode layer is strip-shaped formed on the upper surface of the substrate layer, and correspondingly, the through holes on the insulating array layer are arranged at positions corresponding to the bottom electrode layer.
进一步地,所述顶电极层条状成型所述绝缘阵列层的上表面,所述顶电极层与所述底电极层交叉布置;每一条状底电极和每一条状顶电极均与外部基板电连接,所述基板包括控制电路,所述控制电路用于对每一个条状底电极和条状顶电极进行扫描,构成多个所述检测回路。Further, the upper surface of the insulating array layer is shaped into strips of the top electrode layer, and the top electrode layer is arranged to cross the bottom electrode layer; each strip-shaped bottom electrode and each strip-shaped top electrode are electrically connected to the external substrate connected, the substrate includes a control circuit, and the control circuit is used to scan each strip-shaped bottom electrode and strip-shaped top electrode to form a plurality of detection circuits.
另一方面,本发明实施例提供一种指纹采集装置的制备方法,包括:On the other hand, an embodiment of the present invention provides a method for manufacturing a fingerprint collection device, including:
在选取的衬底层的上表面形成底电极层;forming a bottom electrode layer on the upper surface of the selected substrate layer;
在所述底电极层的上表面形成绝缘阵列层,并在所述绝缘阵列层的上表面设置多个通孔;forming an insulating array layer on the upper surface of the bottom electrode layer, and setting a plurality of through holes on the upper surface of the insulating array layer;
在所述通孔的一侧形成连接电极层,以使所述连接电极层与所述底电极层连接;forming a connection electrode layer on one side of the through hole, so that the connection electrode layer is connected to the bottom electrode layer;
在所述连接电极层和所述绝缘阵列层的上表面形成多个二维材料单元,所述二维材料单元一端连接所述连接电极层,另一端连接顶电极层,将所述顶电极层和所述底电极层与预设的基板电连接,构成多个检测回路;A plurality of two-dimensional material units are formed on the upper surface of the connecting electrode layer and the insulating array layer, one end of the two-dimensional material unit is connected to the connecting electrode layer, and the other end is connected to the top electrode layer, and the top electrode layer is and the bottom electrode layer are electrically connected to a preset substrate to form a plurality of detection circuits;
在所述二维材料材料单元、所述顶电极层以及所述绝缘阵列层的上表面覆盖一层柔性保护层。A flexible protective layer is covered on the upper surfaces of the two-dimensional material unit, the top electrode layer and the insulating array layer.
进一步地,所述在选取的衬底层表面形成底电极层包括:Further, the formation of the bottom electrode layer on the surface of the selected substrate layer includes:
在所述衬底层上以硬掩膜为模板或利用光刻技术进行图形化后,溅射一系列长条状电极作为所述底电极层。A series of strip-shaped electrodes are sputtered on the substrate layer as the bottom electrode layer after patterning with a hard mask as a template or by photolithography.
进一步地,所述在所述绝缘阵列层表面设置通孔,包括:Further, the setting of through holes on the surface of the insulating array layer includes:
通过光刻进行图形化或者以硬掩膜为模板,利用干法刻蚀或湿法刻蚀,在所述绝缘阵列层表面刻蚀出成阵列的微米级所述通孔,所述通孔的位置位于条状底电极层上。Patterning by photolithography or using a hard mask as a template, using dry etching or wet etching, etches an array of micron-scale through holes on the surface of the insulating array layer, the through holes The location is on the strip-shaped bottom electrode layer.
进一步地,所述在所述通孔的一侧形成连接电极层,以使所述连接电极层与所述底电极层连接,包括:Further, forming the connection electrode layer on one side of the through hole so as to connect the connection electrode layer to the bottom electrode layer includes:
通过光刻进行图形化,将所述通孔的一侧露出,通过溅射、沉积或蒸发,再将光刻胶剥离,在所述通孔的一侧形成所述连接电极层。Patterning is performed by photolithography to expose one side of the through hole, and the photoresist is stripped off by sputtering, deposition or evaporation to form the connecting electrode layer on one side of the through hole.
进一步地,所述在所述连接电极层和所述绝缘阵列层表面形成多个二维材料单元,包括:Further, forming a plurality of two-dimensional material units on the surface of the connecting electrode layer and the insulating array layer includes:
干法或者湿法转移大片二维材料到所述连接电极层和所述绝缘阵列层的上表面;transferring a large sheet of two-dimensional material to the upper surface of the connecting electrode layer and the insulating array layer by dry method or wet method;
通过光刻进行图形化,保护在所述通孔上或在所述通孔一侧与所述连接电极层相连的所述二维材料,再进行刻蚀,去掉未被保护的二维材料,形成二维材料层。patterning by photolithography, protecting the two-dimensional material connected to the connection electrode layer on the through hole or on the side of the through hole, and then etching to remove the unprotected two-dimensional material, A two-dimensional material layer is formed.
本发明实施例提供的指纹采集装置及其制备方法,可以实现指纹图像的快速采集,并且减少了皮肤上附着的水分、油脂等污染物对指纹图像采集以及指纹识别准确性的影响,提高了指纹识别的准确性和效率。The fingerprint collection device and its preparation method provided by the embodiments of the present invention can realize fast collection of fingerprint images, and reduce the influence of water, oil and other pollutants attached to the skin on fingerprint image collection and fingerprint recognition accuracy, and improve fingerprint recognition accuracy. recognition accuracy and efficiency.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明实施例中指纹采集装置的结构示意图;FIG. 1 is a schematic structural view of a fingerprint collection device in an embodiment of the present invention;
图2为本发明实施例中又一指纹采集装置的结构示意图;2 is a schematic structural diagram of another fingerprint collection device in an embodiment of the present invention;
图3为本发明实施例中孔洞式指纹采集装置的平面结构示意图;FIG. 3 is a schematic plan view of a hole-type fingerprint collection device in an embodiment of the present invention;
图4为本发明实施例中平面式指纹采集装置的平面结构示意图;FIG. 4 is a schematic diagram of the planar structure of a planar fingerprint collection device in an embodiment of the present invention;
图5为本发明实施例中一种指纹采集装置的制备方法流程示意图;Fig. 5 is a schematic flow chart of a manufacturing method of a fingerprint collection device in an embodiment of the present invention;
图6为本发明实施例中孔洞式指纹采集装置的制备方法流程示意图;6 is a schematic flow chart of a method for preparing a hole-type fingerprint collection device in an embodiment of the present invention;
图7为本发明实施例中平面式指纹采集装置的制备方法流程示意图。Fig. 7 is a schematic flowchart of a method for preparing a planar fingerprint collection device in an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
图1为本发明实施例中指纹采集装置的结构示意图,如图1所示,本发明实施例提供的指纹采集装置包括:Fig. 1 is a schematic structural diagram of a fingerprint collection device in an embodiment of the present invention. As shown in Fig. 1, the fingerprint collection device provided by the embodiment of the present invention includes:
由下至上依次连接的基底10、二维材料阵列层20及柔性保护层30;The substrate 10, the two-dimensional material array layer 20 and the flexible protective layer 30 are sequentially connected from bottom to top;
所述基底10包括由下至上依次连接的衬底层11、底电极层12和绝缘阵列层13,所述绝缘阵列层13上设置有多个通孔14;The substrate 10 includes a substrate layer 11, a bottom electrode layer 12, and an insulating array layer 13 sequentially connected from bottom to top, and the insulating array layer 13 is provided with a plurality of through holes 14;
所述二维材料阵列层20成型在所述绝缘阵列层13远离所述底电极层的一面,并通过所述通孔14与所述底电极层12连接,所述底电极层12以及所述二维材料阵列层20分别和所述装置外部的基板电连接,构成多个检测回路;The two-dimensional material array layer 20 is formed on the side of the insulating array layer 13 away from the bottom electrode layer, and connected to the bottom electrode layer 12 through the through hole 14, the bottom electrode layer 12 and the bottom electrode layer The two-dimensional material array layer 20 is respectively electrically connected to the substrate outside the device to form a plurality of detection circuits;
所述检测回路用于采集所述二维材料阵列层20因受到压力产生不同形变对应的电阻变化,以获取指纹纹路的灰度图像。The detection circuit is used to collect resistance changes corresponding to different deformations of the two-dimensional material array layer 20 due to pressure, so as to obtain grayscale images of fingerprint lines.
具体地,如图1所示,由下至上依次连接的衬底层11、底电极层12和绝缘阵列层13形成基底,在绝缘阵列层13的上设置有多个通孔14,其中通孔14的形状可以是圆柱形、方形或其他形状,本发明实施例不作具体限定。二维材料阵列层20设置在绝缘阵列层13的上表面,并通过通孔14与底电极层12连接。底电极层12和二维材料阵列层20用引线分别与位于指纹采集装置外部的基板电连接,构成检测回路,其中底电极层12和二维材料阵列层20可以形成多个检测回路,获取多个检测回路中二维材料阵列层20因受到不同压力产生不同形变对应的电阻变化,进一步获取到指纹纹路的灰度图像。在二维材料阵列层20以及基底10的顶面即指纹采集装置的上表面设置有很薄的柔性保护层30。其中:衬底层11的材料可以选用Si、Si/SiO2、Si/HfO2、Si/Al2O3、Si/MgO、Si/TiO2、Si/SiNx等硅基衬底,Mica(云母矿石),金刚石,SiC(金刚砂),蓝宝石,石英,玻璃等也可以作为衬底,也可以是柔性衬底PI(塑胶原料,中文俗称聚酰亚胺)、PET(涤纶树脂)、PDMS(聚二甲基硅氧烷)、橡胶等。底电极层12可以选用Au,绝缘阵列层13可以选用SiO2、HfO2、TiO2、Al2O3、MgO,这些以绝缘阵列层的特征是薄且不易形变;绝缘阵列层13还可以选用派瑞林、PDMS等有机绝缘层,这一绝缘阵列层的特征是薄且柔软,可以在二维材料形变时跟随发生同样的形变。二维材料阵列层20可以选用石墨烯或其他具有较好的压阻特性的二维材料如硫化钨,黑磷等,二维材料是指电子仅可在两个维度的非纳米尺度(1-100nm)上自由运动(平面运动)的材料,如纳米薄膜、超晶格、量子阱。柔性保护层30可以选用PDMS、PVA(聚乙烯醇)、PMMA(聚甲基丙烯酸甲酯)、光刻胶、派瑞林等。Specifically, as shown in FIG. 1, the substrate layer 11, the bottom electrode layer 12, and the insulating array layer 13 connected sequentially from bottom to top form a base, and a plurality of through holes 14 are arranged on the insulating array layer 13, wherein the through holes 14 The shape can be cylindrical, square or other shapes, which are not specifically limited in this embodiment of the present invention. The two-dimensional material array layer 20 is disposed on the upper surface of the insulating array layer 13 and connected to the bottom electrode layer 12 through the through hole 14 . The bottom electrode layer 12 and the two-dimensional material array layer 20 are respectively electrically connected to the substrate located outside the fingerprint collection device with lead wires to form a detection circuit, wherein the bottom electrode layer 12 and the two-dimensional material array layer 20 can form multiple detection circuits to obtain multiple detection circuits. In each detection circuit, the two-dimensional material array layer 20 undergoes different pressures to produce resistance changes corresponding to different deformations, and a grayscale image of the fingerprint pattern is further obtained. A very thin flexible protective layer 30 is provided on the top surface of the two-dimensional material array layer 20 and the substrate 10 , that is, the upper surface of the fingerprint collection device. Among them: the material of the substrate layer 11 can be selected from Si, Si/SiO 2 , Si/HfO 2 , Si/Al 2 O 3 , Si/MgO, Si/TiO 2 , Si/SiN x and other silicon-based substrates, Mica (mica Ore), diamond, SiC (corundum), sapphire, quartz, glass, etc. can also be used as substrates, or flexible substrates PI (plastic material, commonly known as polyimide in Chinese), PET (polyester resin), PDMS (polyester resin) Dimethicone), rubber, etc. The bottom electrode layer 12 can be made of Au, and the insulating array layer 13 can be made of SiO 2 , HfO 2 , TiO 2 , Al 2 O 3 , MgO. These insulating array layers are characterized by being thin and difficult to deform; the insulating array layer 13 can also be Organic insulating layers such as parylene and PDMS, this insulating array layer is characterized by thinness and softness, and can follow the same deformation when the two-dimensional material is deformed. The two-dimensional material array layer 20 can be selected from graphene or other two-dimensional materials with good piezoresistive properties such as tungsten sulfide, black phosphorus, etc. The two-dimensional material refers to the non-nanoscale (1- 100nm) materials that move freely (planar motion), such as nanofilms, superlattices, and quantum wells. The flexible protective layer 30 can be selected from PDMS, PVA (polyvinyl alcohol), PMMA (polymethyl methacrylate), photoresist, parylene and the like.
指纹纹路分为脊与谷,当手指按压柔性保护层30时,脊与谷对应位置的柔性保护层30下方的二维材料阵列层20受到的压力不同,产生的形变量也不同,即会产生不同的电阻变化。甚至有可能脊对应位置的二维材料阵列层20有电阻变化,而谷对应位置的二维材料阵列层20没有电阻变化。由此可以通过一个大阵列的二维材料压阻器件,将上述指纹采集装置与相应的基板电连接,通过检测电路即可检测得到指纹纹路的灰度图像,以进行之后的特征对比,实现指纹识别的目的。另外,压力传感可以减少皮肤上附着的水分、油脂等污染物对指纹识别准确性造成的影响。因为在手指按上去时,这些污染物会被挤到指纹的谷中,并且由于其流动性,不会在谷的位置对二维材料压力传感器造成大小接近指纹脊的压力的力,也就减少了污染物所在位置被检测成为脊的可能性。同时,由于压阻效应是瞬态效应,故在响应速度上也有可能超过超声波检测手段。The fingerprint pattern is divided into ridges and valleys. When the finger presses the flexible protective layer 30, the pressure on the two-dimensional material array layer 20 under the flexible protective layer 30 corresponding to the ridges and valleys is different, and the deformation is also different. different resistance changes. It is even possible that the resistance of the two-dimensional material array layer 20 corresponding to the ridges changes, but the resistance of the two-dimensional material array layer 20 corresponding to the valleys does not change. Therefore, a large array of two-dimensional material piezoresistive devices can be used to electrically connect the above-mentioned fingerprint collection device to the corresponding substrate, and the grayscale image of the fingerprint pattern can be detected through the detection circuit for subsequent feature comparison to realize fingerprint recognition. purpose of identification. In addition, pressure sensing can reduce the impact of moisture, oil and other pollutants attached to the skin on the accuracy of fingerprint recognition. Because when the finger is pressed, these pollutants will be squeezed into the valley of the fingerprint, and due to its fluidity, it will not cause a force close to the pressure of the fingerprint ridge on the two-dimensional material pressure sensor at the position of the valley, which also reduces The probability that the location of the contaminant is detected as a ridge. At the same time, since the piezoresistive effect is a transient effect, it may also exceed the ultrasonic detection method in terms of response speed.
本发明实施例提供的指纹采集装置,可以实现指纹图像的快速采集,并且减少了皮肤上附着的水分、油脂等污染物对指纹图像采集以及指纹识别准确性的影响,提高了指纹识别的准确性和效率。The fingerprint collection device provided by the embodiment of the present invention can realize the rapid collection of fingerprint images, and reduces the influence of pollutants such as moisture and oil attached to the skin on the collection of fingerprint images and the accuracy of fingerprint recognition, and improves the accuracy of fingerprint recognition and efficiency.
在上述实施例的基础上,所述二维材料阵列层包括连接电极层、顶电极层和二维材料层,所述连接电极层通过所述通孔与所述底电极层连接,且所述连接电极层与所述通孔的侧壁之间留有间隙;On the basis of the above embodiments, the two-dimensional material array layer includes a connection electrode layer, a top electrode layer and a two-dimensional material layer, the connection electrode layer is connected to the bottom electrode layer through the through hole, and the There is a gap between the connecting electrode layer and the sidewall of the through hole;
所述二维材料层包括多个二维材料单元,多个所述二维材料单元成型在所述连接电极层和所述绝缘阵列层远离所述底电极层的一面,且所述二维材料单元一端连接所述连接电极层,另一端连接所述顶电极层,所述顶电极层与所述装置外部的基板电连接,所述顶电极层与所述底电极层构成多个所述检测回路。The two-dimensional material layer includes a plurality of two-dimensional material units, and the plurality of two-dimensional material units are formed on the side of the connecting electrode layer and the insulating array layer away from the bottom electrode layer, and the two-dimensional material One end of the unit is connected to the connection electrode layer, the other end is connected to the top electrode layer, the top electrode layer is electrically connected to the substrate outside the device, and the top electrode layer and the bottom electrode layer constitute a plurality of the detection circuit.
具体地,如图1所示,二维材料阵列层20包括连接电极层21、顶电极层22和二维材料层23,其中,连接电极层21通过通孔14与底电极层12连接,并且如图1所示,在连接电极层21和通孔14的一个侧壁之间留有一定的间隙,即通孔14不被连接电极层填满,二维材料层和底电极层之间有空隙,即通孔14所在位置,可以为二维材料层23的形变提供空间。二维材料层23包括多个二维材料单元231,如图1所示,二维材料单元231成型在连接电极层21和绝缘阵列层13的顶面,即将多个二维材料单元231阵列布置在连接电极层21和绝缘阵列层13的上表面。并且二维材料单元231一端与连接电极层21连接,另一端与顶电极层22连接,顶电极层22和底电极层12分别与装置外部的基板电连接,构成多个检测回路,以实现当二维材料因压力发生形变时,检测其电阻值的变化,采集到指纹的灰度图像。Specifically, as shown in FIG. 1, the two-dimensional material array layer 20 includes a connection electrode layer 21, a top electrode layer 22 and a two-dimensional material layer 23, wherein the connection electrode layer 21 is connected to the bottom electrode layer 12 through a through hole 14, and As shown in Figure 1, there is a certain gap between the connection electrode layer 21 and a side wall of the through hole 14, that is, the through hole 14 is not filled by the connection electrode layer, and there is a gap between the two-dimensional material layer and the bottom electrode layer. The void, that is, where the through hole 14 is located, can provide a space for the deformation of the two-dimensional material layer 23 . The two-dimensional material layer 23 includes a plurality of two-dimensional material units 231. As shown in FIG. On the upper surface of the connection electrode layer 21 and the insulating array layer 13 . In addition, one end of the two-dimensional material unit 231 is connected to the connection electrode layer 21, and the other end is connected to the top electrode layer 22. The top electrode layer 22 and the bottom electrode layer 12 are respectively electrically connected to the substrate outside the device to form a plurality of detection circuits, so as to realize the present When the two-dimensional material is deformed due to pressure, the change of its resistance value is detected, and the grayscale image of the fingerprint is collected.
在上述实施例的基础上,所述二维材料单元覆盖在所述通孔上方或所述连接电极层和所述绝缘阵列层的上表面。Based on the above embodiments, the two-dimensional material unit covers the through hole or the upper surface of the connecting electrode layer and the insulating array layer.
具体地,如图1所示,将二维材料单元231完全覆盖在通孔14的上方,当然根据需要,二维材料单元231也可以覆盖在除通孔14之外的绝缘阵列层13和连接电极层21的上表面。图2为本发明实施例中又一指纹指纹采集装置的结构示意图,如图2所示,图2与图1中指纹采集装置的结构区别在于二维材料单元231覆盖的位置不同,图1中二维材料单元231将通孔14完全覆盖,图2中二维材料单元231覆盖了通孔14之外的绝缘阵列层13和连接电极层21的上表面。需要说明的是,图1中绝缘阵列层13采用的材质是硬性材质不易变形,如SiO2、HfO2、TiO2、Al2O3或MgO,因此,通过将二维材料单元231覆盖在通孔14上,利用通孔14为二维材料提供形变所需的空间。图2中的绝缘阵列层13采用的材质是柔性易变形的材质,如派瑞林、PDMS等,将二维材料单元231覆盖在通孔14之外的绝缘阵列层13和连接电极层21的上表面,利用绝缘阵列层13使用的柔性材料为二维材料提供形变所需的空间。Specifically, as shown in FIG. 1 , the two-dimensional material unit 231 is completely covered above the through hole 14. Of course, the two-dimensional material unit 231 can also cover the insulating array layer 13 and the connection other than the through hole 14 as required. The upper surface of the electrode layer 21. Figure 2 is a schematic structural view of another fingerprint collection device in an embodiment of the present invention, as shown in Figure 2, the structural difference between Figure 2 and the fingerprint collection device in Figure 1 is that the positions covered by the two-dimensional material unit 231 are different, as shown in Figure 1 The two-dimensional material unit 231 completely covers the through hole 14 . In FIG. 2 , the two-dimensional material unit 231 covers the upper surface of the insulating array layer 13 and the connection electrode layer 21 outside the through hole 14 . It should be noted that the material used for the insulating array layer 13 in FIG. On the hole 14, the through hole 14 is used to provide the space required for the deformation of the two-dimensional material. The material used in the insulating array layer 13 in FIG. 2 is a flexible and easily deformable material, such as parylene, PDMS, etc., and the two-dimensional material unit 231 is covered on the insulating array layer 13 outside the through hole 14 and the connecting electrode layer 21. On the upper surface, the flexible material used in the insulating array layer 13 provides space for the two-dimensional material to deform.
在上述实施例的基础上,所述底电极层条状成型在所述衬底层上表面表面,相应的,所述绝缘阵列层上所述通孔设置在与所述底电极层对应的位置处。On the basis of the above embodiments, the bottom electrode layer is strip-shaped formed on the upper surface of the substrate layer, and correspondingly, the through holes on the insulating array layer are arranged at positions corresponding to the bottom electrode layer .
具体地,底电极层12条状布置在衬底层11的上表面,即衬底层11的上表面上并非完全覆盖有底电极层12,多个条状底电极布置在衬底层11的上表面形成底电极层。此时,绝缘阵列层13上的通孔14设置在与条状底电极层12对应的位置处,以使得每个条状底电极上都对应有若干个通孔,方便底电极层12与二维材料阵列层20连接。Specifically, the bottom electrode layer 12 is arranged in stripes on the upper surface of the substrate layer 11, that is, the upper surface of the substrate layer 11 is not completely covered with the bottom electrode layer 12, and a plurality of strip-shaped bottom electrodes are arranged on the upper surface of the substrate layer 11 to form bottom electrode layer. At this time, the through holes 14 on the insulating array layer 13 are arranged at positions corresponding to the strip-shaped bottom electrode layer 12, so that each strip-shaped bottom electrode has a plurality of through holes corresponding to each other, so that the bottom electrode layer 12 and the two The dimensional material array layer 20 is connected.
在上述实施例的基础上,所述顶电极层条状成型所述绝缘阵列层的上表面,所述顶电极层与所述底电极层交叉布置;On the basis of the above embodiment, the top electrode layer is strip-shaped on the upper surface of the insulating array layer, and the top electrode layer and the bottom electrode layer are arranged to cross;
每一条状底电极和每一条状顶电极均与外部基板电连接,所述基板包括控制电路,所述控制电路用于对每一个条状底电极和条状顶电极进行扫描,构成多个所述检测回路。Each strip-shaped bottom electrode and each strip-shaped top electrode are electrically connected to an external substrate, and the substrate includes a control circuit for scanning each strip-shaped bottom electrode and strip-shaped top electrode to form a plurality of strip-shaped bottom electrodes and strip-shaped top electrodes. The detection circuit described above.
具体地,顶电极层22条状设置绝缘阵列层13的上表面,多个条状顶电极布置在绝缘阵列层13的上表面形成顶电极层22,并且顶电极层22与底电极层12交叉设置,即顶电极层22与底电极层12的布置方向不同,以形成电极扫描阵列。在实际应用时,每一个条状底电极和条状顶电极都和外部基板连接,且外部基板中带有控制电路,可以实现对每一个条状底电极和条状顶电极进行扫描,构成多个检测回路,获取每个检测回路中的电阻变化,以获取指纹的灰度图像。Specifically, the top electrode layer 22 is strip-shaped on the upper surface of the insulating array layer 13, and a plurality of strip-shaped top electrodes are arranged on the upper surface of the insulating array layer 13 to form the top electrode layer 22, and the top electrode layer 22 crosses the bottom electrode layer 12. Setting, that is, the arrangement directions of the top electrode layer 22 and the bottom electrode layer 12 are different, so as to form an electrode scanning array. In actual application, each strip-shaped bottom electrode and strip-shaped top electrode are connected to the external substrate, and the external substrate has a control circuit, which can realize scanning of each strip-shaped bottom electrode and strip-shaped top electrode, forming a multi- Each detection loop is used to obtain the resistance change in each detection loop to obtain the grayscale image of the fingerprint.
图3为本发明实施例中孔洞式指纹采集装置的平面结构示意图,图4为本发明实施例中平面式指纹采集装置的平面结构示意图,图3对应的是图1的平面示意图,图4对应的是图2的平面示意图,本发明实施例区分孔洞式和平面式指纹采集装置主要通过通孔是否全部被二维材料层覆盖,若是,则为孔洞式指纹采集装置,否则为平面式指纹采集装置。如图3所示,在衬底层11的上表面设置有条状分布的底电极层12,底电极层12的上表面设置有绝缘阵列层13,绝缘阵列层13上表面设置有二维材料层23和条状布置的顶电极层22,图3中通孔14处被二维材料层23全部覆盖。如图4所示,图4与图3的区别在于,图4中的通孔14处没有被二维材料层23全部覆盖。如图3和图4可以看出,本发明实施例中的底电极层12和顶电极层22是垂直布置,即交叉布置的一种,实际应用时,可以根据需要设置交叉的角度,本发明实施例不作具体限定。Fig. 3 is a schematic plan view of a hole-type fingerprint collection device in an embodiment of the present invention, and Fig. 4 is a plan view of a planar fingerprint collection device in an embodiment of the present invention. Fig. 3 corresponds to a plan view of Fig. 1, and Fig. 4 corresponds to 2 is a schematic plan view. The embodiment of the present invention distinguishes hole-type and planar-type fingerprint collection devices mainly by whether the through holes are all covered by a two-dimensional material layer. If so, it is a hole-type fingerprint collection device, otherwise it is a planar fingerprint collection device. device. As shown in Figure 3, a bottom electrode layer 12 distributed in strips is arranged on the upper surface of the substrate layer 11, an insulating array layer 13 is arranged on the upper surface of the bottom electrode layer 12, and a two-dimensional material layer is arranged on the upper surface of the insulating array layer 13. 23 and the top electrode layer 22 arranged in strips, the through hole 14 in FIG. 3 is completely covered by the two-dimensional material layer 23 . As shown in FIG. 4 , the difference between FIG. 4 and FIG. 3 is that the through hole 14 in FIG. 4 is not completely covered by the two-dimensional material layer 23 . It can be seen from Fig. 3 and Fig. 4 that the bottom electrode layer 12 and the top electrode layer 22 in the embodiment of the present invention are vertically arranged, that is, a kind of intersecting arrangement. In practical application, the intersecting angle can be set as required. Examples are not specifically limited.
本发明实施例提供的指纹采集装置,将二维半导体材料的压阻特性运用于指纹识别技术,合理设置压阻传感器指纹采集装置的结构,将压阻传感器作为指纹识别的基本单元,用于采集指纹的灰度图像,再进行后续的特征比对,实现具有较高准确度,较快速度的新型指纹识别,提高了指纹识别的准确性和效率。The fingerprint acquisition device provided by the embodiment of the present invention uses the piezoresistive characteristics of two-dimensional semiconductor materials in fingerprint identification technology, reasonably sets the structure of the piezoresistive sensor fingerprint acquisition device, and uses the piezoresistive sensor as the basic unit of fingerprint identification for fingerprint identification. The grayscale image of the fingerprint is then compared with the subsequent features to realize a new type of fingerprint identification with higher accuracy and faster speed, which improves the accuracy and efficiency of fingerprint identification.
图5为本发明实施例中一种指纹采集装置的制备方法流程示意图,如图5所示,本发明实施例提供的指纹采集装置的制备流程包括:Fig. 5 is a schematic flow chart of a preparation method of a fingerprint collection device in an embodiment of the present invention. As shown in Fig. 5, the preparation process of the fingerprint collection device provided by the embodiment of the present invention includes:
S1、在选取的衬底层的上表面形成底电极层;S1, forming a bottom electrode layer on the upper surface of the selected substrate layer;
S2、在所述底电极层的上表面形成绝缘阵列层,并在所述绝缘阵列层的上表面设置多个通孔;S2, forming an insulating array layer on the upper surface of the bottom electrode layer, and setting a plurality of through holes on the upper surface of the insulating array layer;
S3、在所述通孔的一侧形成连接电极层,以使所述连接电极层与所述底电极层连接;S3. Form a connection electrode layer on one side of the through hole, so that the connection electrode layer is connected to the bottom electrode layer;
S4、在所述连接电极层和所述绝缘阵列层的上表面形成多个二维材料单元,所述二维材料单元一端连接所述连接电极层,另一端连接顶电极层,将所述顶电极层和所述底电极层与预设的基板电连接,构成多个检测回路;S4. Form a plurality of two-dimensional material units on the upper surface of the connecting electrode layer and the insulating array layer, one end of the two-dimensional material unit is connected to the connecting electrode layer, and the other end is connected to the top electrode layer, and the top The electrode layer and the bottom electrode layer are electrically connected to a preset substrate to form multiple detection circuits;
S5、在所述二维材料材料单元、所述顶电极层以及所述绝缘阵列层的上表面覆盖一层柔性保护层。S5. Covering a flexible protective layer on the upper surfaces of the two-dimensional material unit, the top electrode layer and the insulating array layer.
具体地,本发明实施例提供的指纹采集装置的制备方法,首先选择合适的衬底层,具体材料的选择同上述实施例一致,此处不再赘述。选择出合适的衬底层后,将衬底层清洗干净,可以根据不同材料的衬底层选择不同的清洗方式,例如,Si/SiO2等硅基衬底可以用食人鱼溶液(浓硫酸:30%过氧化氢=7:3)浸泡后用去离子水冲洗并高纯氮气吹干,PI或者PET等有机柔性衬底则可以用丙酮、甲醇、异丙醇、酒精等有机溶剂依次进行超声清洗后高纯氮气吹干。在清洗干净的衬底层的上表面覆盖金属形成底电极层,在底电极层的上表面设置一层绝缘阵列层,并在绝缘阵列层的表面设置有多个通孔。在绝缘阵列层表面上的通孔的一侧形成连接电极层,以使该连接电极层通过通孔与底电极连接。在连接电极层和绝缘阵列层的上表面形成多个二维材料单元构成二维材料层,其中二维材料单元一端与连接电极层连接,另一端与顶电极层连接。将顶电极层和底电极层与预设的基板电连接,构成多个检测回路,以检测二维材料层的电阻变化,进一步获取指纹纹路的灰度图像。将指纹采集装置的各个结构层设置好后,在指纹采集装置的上表面形成柔性保护层,以保护指纹采集装置。Specifically, in the manufacturing method of the fingerprint collection device provided by the embodiment of the present invention, firstly, an appropriate substrate layer is selected, and the selection of the specific material is consistent with the above-mentioned embodiment, and will not be repeated here. After selecting a suitable substrate layer, clean the substrate layer. Different cleaning methods can be selected according to the substrate layer of different materials. Hydrogen oxide=7:3) rinse with deionized water and blow dry with high-purity nitrogen after soaking, organic flexible substrates such as PI or PET can be ultrasonically cleaned with organic solvents such as acetone, methanol, isopropanol, alcohol, etc. Blow dry with pure nitrogen. The upper surface of the cleaned substrate layer is covered with metal to form a bottom electrode layer, an insulating array layer is arranged on the upper surface of the bottom electrode layer, and a plurality of through holes are arranged on the surface of the insulating array layer. A connection electrode layer is formed on one side of the through hole on the surface of the insulating array layer, so that the connection electrode layer is connected to the bottom electrode through the through hole. A plurality of two-dimensional material units are formed on the upper surface of the connecting electrode layer and the insulating array layer to form a two-dimensional material layer, wherein one end of the two-dimensional material unit is connected to the connecting electrode layer, and the other end is connected to the top electrode layer. The top electrode layer and the bottom electrode layer are electrically connected to the preset substrate to form multiple detection circuits to detect the resistance change of the two-dimensional material layer, and further obtain the grayscale image of the fingerprint pattern. After the various structural layers of the fingerprint collection device are arranged, a flexible protective layer is formed on the upper surface of the fingerprint collection device to protect the fingerprint collection device.
本发明实施例提供的指纹采集装置的制备方法,该方法的实现过程简单且制备得到的指纹采集装置可靠且适用性强,使得经该方法制备得到的指纹采集装置可以实现指纹图像的快速采集,并且减少了皮肤上附着的水分、油脂等污染物对指纹图像采集以及指纹识别准确性的影响,提高了指纹识别的准确性和效率。The preparation method of the fingerprint collection device provided by the embodiment of the present invention has a simple implementation process and the prepared fingerprint collection device is reliable and has strong applicability, so that the fingerprint collection device prepared by the method can realize the rapid collection of fingerprint images, Moreover, the influence of water, oil and other pollutants attached to the skin on the fingerprint image collection and fingerprint identification accuracy is reduced, and the accuracy and efficiency of fingerprint identification are improved.
在上述实施例的基础上,所述在选取的衬底层表面形成底电极层包括:On the basis of the above embodiments, the formation of the bottom electrode layer on the surface of the selected substrate layer includes:
在所述衬底层上以硬掩膜为模板或利用光刻技术进行图形化后,溅射一系列长条状电极作为所述底电极层。A series of strip-shaped electrodes are sputtered on the substrate layer as the bottom electrode layer after patterning with a hard mask as a template or by photolithography.
具体地,即在衬底层的上表面成型出条状的底电极层,具体可以通过以硬掩膜为模板或利用光刻技术进行图形化后,溅射一系列长条状电极作为底电极层。可以根据需要选择模板的形状以及光刻技术的图形化的形状,本发明实施例不作具体限定。Specifically, a strip-shaped bottom electrode layer is formed on the upper surface of the substrate layer. Specifically, a series of strip-shaped electrodes can be sputtered as the bottom electrode layer after patterning with a hard mask as a template or by photolithography. . The shape of the template and the patterned shape of the photolithography technology can be selected according to needs, which are not specifically limited in the embodiment of the present invention.
在上述实施例的基础上,所述在所述绝缘阵列层表面设置通孔,包括:On the basis of the above embodiments, the setting of through holes on the surface of the insulating array layer includes:
通过光刻进行图形化或者以硬掩膜为模板,利用干法刻蚀或湿法刻蚀,在所述绝缘阵列层表面刻蚀出成阵列的微米级所述通孔,所述通孔的位置位于条状底电极层上。Patterning by photolithography or using a hard mask as a template, using dry etching or wet etching, etches an array of micron-scale through holes on the surface of the insulating array layer, the through holes The location is on the strip-shaped bottom electrode layer.
具体地,底电极层形成后,在底电极层上沉积一层绝缘阵列层,绝缘阵列层的材质的选择同上述实施例一致,此处不再赘述。绝缘阵列层形成后,需要在该绝缘阵列层上设置多个通孔,以实现二维材料阵列层与底电极层的连接。其中通孔的设置方法可以是:通过光刻进行图形化或者以硬掩膜为模板,利用干法刻蚀或湿法刻蚀(根据绝缘阵列层的材料选择干法刻蚀或湿法刻蚀),在所述绝缘阵列层表面刻蚀出成阵列的微米级多个通孔,其中多个通孔的位置位于条状底电极层上。可以根据需要选择模板的形状以及光刻技术的图形化的形状,本发明实施例不作具体限定。其中,干法刻蚀的刻蚀剂是等离子体,是利用等离子体和表面薄膜反应,形成挥发性物质,或直接轰击薄膜表面使之被腐蚀的工艺;湿法刻蚀是通过化学刻蚀液和被刻蚀物质之间的化学反应将被刻蚀物质腐蚀下来的刻蚀方法。Specifically, after the bottom electrode layer is formed, an insulating array layer is deposited on the bottom electrode layer, and the selection of the material of the insulating array layer is consistent with the above-mentioned embodiments, and will not be repeated here. After the insulating array layer is formed, a plurality of through holes need to be provided on the insulating array layer to realize the connection between the two-dimensional material array layer and the bottom electrode layer. The setting method of the through holes can be: patterning by photolithography or using a hard mask as a template, using dry etching or wet etching (selecting dry etching or wet etching according to the material of the insulating array layer) ), etching a plurality of micron-scale through holes in an array on the surface of the insulating array layer, wherein the positions of the plurality of through holes are located on the strip-shaped bottom electrode layer. The shape of the template and the patterned shape of the photolithography technology can be selected according to needs, which are not specifically limited in the embodiment of the present invention. Among them, the etchant of dry etching is plasma, which uses plasma to react with the surface film to form volatile substances, or directly bombards the surface of the film to be corroded; wet etching uses chemical etching solution The chemical reaction with the etched substance will corrode the etching method.
在上述实施例的基础上,所述在所述通孔的一侧形成连接电极层,以使所述连接电极层与所述底电极层连接,包括:On the basis of the above embodiments, the formation of the connection electrode layer on one side of the through hole so as to connect the connection electrode layer to the bottom electrode layer includes:
通过光刻进行图形化,将所述通孔的一侧露出,通过溅射、沉积或蒸发,再将光刻胶剥离,在所述通孔的一侧形成所述连接电极层。Patterning is performed by photolithography to expose one side of the through hole, and the photoresist is stripped off by sputtering, deposition or evaporation to form the connecting electrode layer on one side of the through hole.
具体地,将绝缘阵列层的通孔设置好后,通过光刻进行图形化,将各个通孔的一侧露出,通过溅射、沉积或蒸发,在通孔的一侧注入金属形成电极,再将光刻胶剥离,在各个通孔的一侧形成连接电极层。即根据需要遮住各个通孔的一部分体积,通过溅射、沉积或蒸发等技术,将通孔露出的一侧形成电极即连接电极层,该连接电极层与底电极层连接。具体露出的通孔的体积可以根据需要进行设置,本发明实施例不作具体限定。或者,也可以先在上述带通孔的绝缘阵列成层上做一层金属作为电极,之后用光刻进行图形化,将需要的部分用光刻胶保护后进行刻蚀,再将光刻胶去掉达到同样的目的。Specifically, after the through holes of the insulating array layer are set, patterning is carried out by photolithography, one side of each through hole is exposed, and metal is injected into one side of the through hole by sputtering, deposition or evaporation to form an electrode, and then The photoresist is peeled off, and a connection electrode layer is formed on one side of each through hole. That is, cover a part of the volume of each through hole as required, and form an electrode on the exposed side of the through hole by sputtering, deposition or evaporation techniques, that is, a connection electrode layer, and the connection electrode layer is connected to the bottom electrode layer. The specific volume of the exposed through hole can be set according to needs, and is not specifically limited in this embodiment of the present invention. Or, it is also possible to make a layer of metal on the insulating array with through holes as an electrode, and then use photolithography to pattern it, and then etch the required parts with photoresist protection, and then photoresist Remove to achieve the same purpose.
在上述实施例的基础上,所述在所述连接电极层和所述绝缘阵列层表面形成多个二维材料单元,包括:On the basis of the above embodiments, the formation of multiple two-dimensional material units on the surface of the connecting electrode layer and the insulating array layer includes:
干法或者湿法转移大片二维材料到所述连接电极层和所述绝缘阵列层的上表面;transferring a large sheet of two-dimensional material to the upper surface of the connecting electrode layer and the insulating array layer by dry method or wet method;
通过光刻进行图形化,保护在所述通孔上或在所述通孔一侧与所述连接电极层相连的所述二维材料,再进行刻蚀,去掉未被保护的二维材料,形成二维材料层。patterning by photolithography, protecting the two-dimensional material connected to the connection electrode layer on the through hole or on the side of the through hole, and then etching to remove the unprotected two-dimensional material, A two-dimensional material layer is formed.
具体地,将衬底层、底电极层、连接电极层和绝缘阵列层设置好后,通过干法或者湿法转移大片二维材料如石墨烯到连接电极层以及绝缘阵列层的上表面。再通过光刻进行图形化,保护在通孔上或在通孔一侧与连接电极层相连的二维材料,再进行刻蚀,去掉未被保护的二维材料,形成二维材料层。即二维材料层覆盖在通孔上或除通孔以外的绝缘阵列层上,如图1所示,保护通孔上方的二维材料,去除其他的二维材料,使得通孔完全被二维材料层覆盖;如图2所示,保护通孔以外的绝缘阵列层上的二维材料,去除通孔上方的二维材料,使得二维材料覆盖在通孔以外的绝缘阵列层上。Specifically, after the substrate layer, the bottom electrode layer, the connecting electrode layer and the insulating array layer are arranged, a large piece of two-dimensional material such as graphene is transferred to the upper surface of the connecting electrode layer and the insulating array layer by dry method or wet method. Then patterning is carried out by photolithography to protect the two-dimensional material connected to the connection electrode layer on the through hole or on the side of the through hole, and then etch to remove the unprotected two-dimensional material to form a two-dimensional material layer. That is, the two-dimensional material layer covers the through hole or the insulating array layer except the through hole, as shown in Figure 1, the two-dimensional material above the through hole is protected, and other two-dimensional materials are removed, so that the through hole is completely covered by two-dimensional Material layer covering; as shown in Figure 2, protect the two-dimensional material on the insulating array layer outside the through hole, remove the two-dimensional material above the through hole, so that the two-dimensional material covers the insulating array layer outside the through hole.
图6为本发明实施例中孔洞式指纹采集装置的制备方法流程示意图,如图6所示,本发明实施例中的指纹采集装置的具体流程如下:Fig. 6 is a schematic flow chart of the preparation method of the hole-type fingerprint collection device in the embodiment of the present invention. As shown in Fig. 6, the specific flow of the fingerprint collection device in the embodiment of the present invention is as follows:
步骤61、选用带有300nm热氧层的Si晶圆,作为衬底层,以硬掩膜为模板,采用磁控溅射沉积厚度为50nmCr/Au作为缓冲层和底电极层,以改善电极与衬底层之间的结合,具体如图6中(1)所示。Step 61. Select a Si wafer with a 300nm thermal oxygen layer as the substrate layer, use a hard mask as a template, and deposit Cr/Au with a thickness of 50nm by magnetron sputtering as a buffer layer and a bottom electrode layer to improve the electrode and substrate layer. The combination between the bottom layers is specifically shown in (1) in FIG. 6 .
步骤62、采用ALD(Atomic layer deposition,原子层沉积)在表面沉积80nmHfO2作为绝缘阵列层,并用CMP(Chemical mechanical polishing/planarization,化学机械研磨)磨平,具体如图6中(2)所示。Step 62, use ALD (Atomic layer deposition, atomic layer deposition) to deposit 80nmHfO 2 on the surface as an insulating array layer, and use CMP (Chemical mechanical polishing/planarization, chemical mechanical polishing) to smooth it, as shown in (2) in Figure 6 .
步骤63、利用光刻和干法刻蚀在绝缘阵列层HfO2上形成10μm*10μm的通孔,具体如图6中(3)所示。Step 63, using photolithography and dry etching to form a 10 μm*10 μm through hole on the insulating array layer HfO 2 , as shown in (3) in FIG. 6 .
步骤64、以硬掩膜为模板,对准通孔的一边,采用磁控溅射沉积50nmAu作为连接底电极层的连接电极层,具体如图6中(4)所示。Step 64, use the hard mask as a template, align one side of the through hole, and deposit 50nm Au as the connecting electrode layer connecting the bottom electrode layer by magnetron sputtering, as shown in (4) in FIG. 6 .
步骤65、湿法转移将大片单层石墨烯转移到硅片上,具体如图6中(5)所示。Step 65, wet transfer transfer large single-layer graphene to the silicon wafer, specifically as shown in (5) in Figure 6 .
步骤66、利用光刻和干法刻蚀在石墨烯上形成15μm*15μm的小片覆盖于通孔之上,形成二维材料层,具体如图6中(6)所示。Step 66, using photolithography and dry etching to form small pieces of 15 μm*15 μm on the graphene to cover the through holes to form a two-dimensional material layer, as shown in (6) in FIG. 6 .
步骤67、以硬掩膜为模板,对准二维材料层没有电极的一侧,采用磁控溅射沉积50nm Cr/Au作为缓冲层和顶电极层,具体如图6中(7)所示。Step 67, using the hard mask as a template, align the side of the two-dimensional material layer without electrodes, and deposit 50nm Cr/Au as a buffer layer and top electrode layer by magnetron sputtering, as shown in (7) in Figure 6 .
步骤68、最后用旋涂法甩一层PDMS作为柔性保护层,具体如图6中(8)所示,最终制备完成指纹采集装置。Step 68. Finally, a layer of PDMS is used as a flexible protective layer by spin coating, as shown in (8) in FIG. 6 , and the fingerprint collection device is finally prepared.
图7为本发明实施例中平面式指纹采集装置的制备方法流程示意图,如图7所示,本发明实施例中的指纹采集装置的具体流程如下:Fig. 7 is a schematic flow chart of the preparation method of the planar fingerprint collection device in the embodiment of the present invention. As shown in Fig. 7, the specific flow of the fingerprint collection device in the embodiment of the present invention is as follows:
步骤71、选用带有300nm热氧层的Si晶圆,作为衬底层,以硬掩膜为模板,采用磁控溅射沉积厚度为50nmCr/Au作为缓冲层和底电极层,以改善电极与衬底层之间的结合,具体如图7中(1)所示。Step 71. Select a Si wafer with a 300nm thermal oxygen layer as the substrate layer, use a hard mask as a template, and deposit Cr/Au with a thickness of 50nm by magnetron sputtering as a buffer layer and a bottom electrode layer to improve the electrode and substrate layer. The combination between the bottom layers is specifically shown in (1) in FIG. 7 .
步骤72、采用旋涂法甩一层80nm派瑞林作为绝缘层,并用磨平,具体如图7中(2)所示。Step 72, using a spin-coating method to cast a layer of 80nm parylene as an insulating layer, and smoothing it out, as shown in (2) in FIG. 7 .
步骤73、利用光刻和干法刻蚀在绝缘阵列层HfO2上形成10μm*10μm的通孔,具体如图7中(3)所示。Step 73, using photolithography and dry etching to form a 10 μm*10 μm via hole on the insulating array layer HfO 2 , as shown in (3) in FIG. 7 .
步骤74、以硬掩膜为模板,对准通孔的一边,采用磁控溅射沉积50nmAu作为连接底电极层的连接电极层,具体如图7中(4)所示。Step 74 , use the hard mask as a template, align one side of the through hole, and deposit 50nm Au by magnetron sputtering as the connecting electrode layer connecting the bottom electrode layer, as shown in (4) in FIG. 7 .
步骤75、湿法转移将大片单层石墨烯转移到硅片上,具体如图7中(5)所示。Step 75, wet transfer transfer large single-layer graphene to the silicon wafer, specifically as shown in (5) in Figure 7.
步骤76、利用光刻和干法刻蚀在石墨烯上形成15μm*15μm的小片覆盖于连接电极层与派瑞林绝缘阵列层之上,形成二维材料层,具体如图7中(6)所示。Step 76, using photolithography and dry etching to form a small piece of 15 μm*15 μm on the graphene to cover the connecting electrode layer and the parylene insulating array layer to form a two-dimensional material layer, as shown in (6) in Figure 7 shown.
步骤77、以硬掩膜为模板,对准二维材料层没有电极的一侧,采用磁控溅射沉积50nm Cr/Au作为缓冲层和顶电极层,具体如图7中(7)所示。Step 77, using the hard mask as a template, align the side of the two-dimensional material layer without electrodes, and deposit 50nm Cr/Au as a buffer layer and top electrode layer by magnetron sputtering, as shown in (7) in Figure 7 .
步骤78、最后用旋涂法甩一层PDMS作为柔性保护层,具体如图7中(8)所示。Step 78. Finally, a layer of PDMS is used as a flexible protective layer by spin coating, as shown in (8) in FIG. 7 .
可以看出图6和图7的区别在于绝缘阵列层的材质不同,相应的导致二维材料层的覆盖范围不同。图6中绝缘阵列层采用的材质是硬性材质不易变形,通过将二维材料层覆盖在通孔上,利用通孔为二维材料提供形变所需的空间。图7中绝缘阵列层采用的材质是柔性易变形的材质,二维材料层覆盖在通孔之外的绝缘阵列层和连接电极层的上表面,利用绝缘阵列层使用的柔性材料为二维材料提供形变所需的空间。此外,本发明实施例的电极宽度、厚度,绝缘阵列层的厚度,石墨烯片的边长,均可根据需求设计,以减少指纹采集装置的体积,提高指纹采集装置的性能。It can be seen that the difference between FIG. 6 and FIG. 7 lies in that the material of the insulating array layer is different, which correspondingly results in a different coverage of the two-dimensional material layer. The material used for the insulating array layer in FIG. 6 is a hard material that is not easily deformed. By covering the through hole with a two-dimensional material layer, the through hole is used to provide the space required for deformation of the two-dimensional material. The material used in the insulating array layer in Figure 7 is a flexible and easily deformable material. The two-dimensional material layer covers the upper surface of the insulating array layer and the connecting electrode layer outside the through holes. The flexible material used in the insulating array layer is a two-dimensional material. Provides the space needed for deformation. In addition, the electrode width and thickness, the thickness of the insulating array layer, and the side length of the graphene sheet in the embodiment of the present invention can all be designed according to requirements, so as to reduce the volume of the fingerprint collection device and improve the performance of the fingerprint collection device.
需要说明的是,本发明实施例中的二维材料选用的是石墨烯,因为在压力、拉力等应力作用下,石墨烯具有的电阻率随着应力发生改变的特性。并且,悬空的石墨烯可以在针尖按压下被拉伸,在拉伸量达到大约3%时,就已经有约5%的电阻变化,石墨烯最大能够承受25%左右的平面内的拉伸应力,这样大的应力强度足以产生非常大的电阻变化用于电路检测。当然,根据需要也可以选择其他的二维材料制备指纹采集装置,如硫化钨,黑磷等。It should be noted that graphene is selected as the two-dimensional material in the embodiment of the present invention, because graphene has the characteristic that its resistivity changes with stress under stress such as pressure and tension. Moreover, the suspended graphene can be stretched under the pressure of the needle tip. When the stretching amount reaches about 3%, there is already about 5% resistance change, and the graphene can withstand a maximum in-plane tensile stress of about 25%. , such a large stress intensity is sufficient to generate a very large resistance change for circuit detection. Of course, other two-dimensional materials, such as tungsten sulfide, black phosphorus, etc., can also be selected to prepare the fingerprint collection device as required.
本发明实施例提供的指纹采集装置制备方法,过程简单操作方便,制备出的指纹采集装置,抗干扰性强,采集速度快,体积小,能够快速准确的采集到指纹的灰度图像,进一步提高了指纹识别的准确性和效率。The preparation method of the fingerprint collection device provided by the embodiment of the present invention has simple process and convenient operation. The prepared fingerprint collection device has strong anti-interference, fast collection speed, small size, and can quickly and accurately collect the grayscale image of the fingerprint, further improving the fingerprint collection device. The accuracy and efficiency of fingerprint recognition are improved.
以上所描述的装置实施例仅仅是示意性的,其中所述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物理单元,即可以位于一个地方,或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部模块来实现本实施例方案的目的。本领域普通技术人员在不付出创造性的劳动的情况下,即可以理解并实施。The device embodiments described above are only illustrative, and the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in One place, or it can be distributed to multiple network elements. Part or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. It can be understood and implemented by those skilled in the art without any creative efforts.
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