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CN108665930A - A kind of nand flash memory chip - Google Patents

A kind of nand flash memory chip Download PDF

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Publication number
CN108665930A
CN108665930A CN201710212610.1A CN201710212610A CN108665930A CN 108665930 A CN108665930 A CN 108665930A CN 201710212610 A CN201710212610 A CN 201710212610A CN 108665930 A CN108665930 A CN 108665930A
Authority
CN
China
Prior art keywords
module
signal
register
shift register
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710212610.1A
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Chinese (zh)
Inventor
苏志强
程莹
张现聚
李建新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GigaDevice Semiconductor Beijing Inc
Original Assignee
GigaDevice Semiconductor Beijing Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GigaDevice Semiconductor Beijing Inc filed Critical GigaDevice Semiconductor Beijing Inc
Priority to CN201710212610.1A priority Critical patent/CN108665930A/en
Publication of CN108665930A publication Critical patent/CN108665930A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/24Bit-line control circuits

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  • Read Only Memory (AREA)

Abstract

The embodiment of the invention discloses a kind of nand flash memory chips, the chip includes the first module and multiple second modules, first module is to each multiple signals of second module transfer, it include register in each second module, multiple second mould registers in the block connect into shift register, first module is connected to the input terminal of the shift register, for passing through the shift register, and under clock control, successively to the signal needed for each second module transfer, wherein, the number for completing the clock cycle needed for whole signal transmissions is identical as the number of the second module.Nand flash memory chip provided in an embodiment of the present invention can solve in the prior art, and because the connecting line quantity of intermodule is more, the problem of influencing chip area utilization rate has achieved the effect that improve chip area utilization rate.

Description

A kind of nand flash memory chip
Technical field
The present embodiments relate to memory technology more particularly to a kind of nand flash memory chips.
Background technology
Nand flash memory is one kind of Flash memories, belongs to nonvolatile semiconductor memory.
Include multiple and different modules in nand flash memory, and there are more signal transmissions, such as Fig. 1 between different modules It is shown, module 1 to be provided respectively to module a, module b, module c and module d a plurality of signal such as signal a1-an, signal b1-bn, Signal c1-cn and signal d1-dn, wherein module 1 is, for example, the gating circuit of X-direction, and module a-d is, for example, data block a-d, Gating circuit is connect with each data multiple wordline in the block, and required voltage can be provided for wordline by gating circuit.
Multiple signal transmissions between disparate modules are required for being embodied on domain, and enough spaces are needed on domain It realizes.Therefore, chip area utilization rate how is improved, urgent problem to be solved is become.
Invention content
The embodiment of the present invention provides a kind of nand flash memory chip, to improve chip area utilization rate.
In a first aspect, an embodiment of the present invention provides a kind of nand flash memory chip, the chip includes the first module and more A second module, the first module to each multiple signals of second module transfer,
Include register in each second module, multiple second mould registers in the block connect into shift register, the One module is connected to the input terminal of the shift register, for passing through the shift register, and under clock control, successively To the signal needed for each second module transfer, wherein complete the number and second of the clock cycle needed for whole signal transmissions The number of module is identical.
Further, when signal number all same of first module to each second module transfer, each second module In register digit and the signal number all same.
Further, when the first module is differed to the signal number of each second module transfer, each second module In register digit it is identical, and the digit and the signal number phase needed for the largest number of second modules of desired signal Together.
Further, when the first module is differed to the signal number of each second module transfer, according to the second module Required signal number arranges the second module, and each second from the near to the distant from more to few sequence, and with the first module Respectively required signal number is identical for the digit of mould register in the block and each second module.
The embodiment of the present invention is in the block by the second mould by the first module signal multiple to each second module transfer Register constitutes shift register, and under the control of the clock signal of shift register, the multiple signal is transmitted respectively To the multiple second module, the connecting line quantity solved in the prior art because of intermodule is more, influences chip area utilization The problem of rate, has achieved the effect that improve chip area utilization rate.
Description of the drawings
Fig. 1 is the nand flash memory domain schematic diagram of the prior art;
Fig. 2 is the nand flash memory chip domain arrangement schematic diagram that the embodiment of the present invention one provides;
Fig. 3 is nand flash memory chip domain arrangement schematic diagram provided by Embodiment 2 of the present invention;
Fig. 4 is the nand flash memory chip domain arrangement schematic diagram that the embodiment of the present invention three provides.
Specific implementation mode
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 2 is the nand flash memory chip domain arrangement schematic diagram that the embodiment of the present invention one provides, and the present embodiment is applicable to NAND flash memory equipment, the NAND chip include the first module and multiple second modules, and the first module is to each second module transfer Multiple signals.The nand flash memory chip that the embodiment of the present invention one provides specifically includes:
Include register in each second module, multiple second mould registers in the block connect into shift register, the One module is connected to the input terminal of the shift register, for passing through the shift register, and under clock control, successively To the signal needed for each second module transfer, wherein complete the number and second of the clock cycle needed for whole signal transmissions The number of module is identical.
Wherein, there are data transmission relations with each second module for the first module, due to the first module and each second mould Block is all the function module in nand flash memory chip, so transmitting the digit of signal between the first module and each second module is It is thick-and-thin.Every piece is latched for example, the first module is data, the second module is programming drive module, nand flash memory chip work It is fixed from data latch module to the signal programming drive module when making, so, setting is posted the second mould is in the block Storage digit can be by the signal of data transmission determines between the first module in the module routine.
It should be noted that can be identical module between multiple second modules, it can also be different module, and The embodiment of the present invention does not limit the quantity of the second module, gives 4 the second modules for convenience of description, in Fig. 2 as a kind of Example.
When multiple second moulds register in the block constitutes shift register, can under the control of clock control signal, The function of realizing shift register controls the shift register signal transmission that sends out the first module extremely by clock control signal Corresponding second module.Wherein, in conjunction with Fig. 2, the signal that the first module is sent out is preferentially to send out the 4th the second module (right end The second module) signal, followed by the signal of third the second module, followed by the signal of second the second module, most The signal of first the second module afterwards, in this way, shift register can under control of the clock signal will transmission signal according to It is secondary to move to right, to be transmitted to corresponding second module successively.And in signal data transmission process, whole signal transmissions are completed The number of required clock cycle is identical with the second number of modules, and this makes it possible to ensure the first module to each second mould The signal that block is sent out can correctly be transmitted to corresponding second module, the phenomenon that avoiding the occurrence of error of transmission.
Preferably, when signal number all same of first module to each second module transfer, in each second module Register digit and the signal number all same.
As shown in Fig. 2, equally as an example, the digit of signal received by each second module is signal 1- letters Number n is n total, thus a n-bit register can be arranged in each second inside modules.It should be noted that each second Signal 1- signals n between module can be identical signal, can also be different signal, the application does not do any limit It is fixed.
The benefit that register is arranged in each second module is can to believe to each second module transfer to avoid the first module Number when, be required for configuration with transmission signal respective numbers cabling, improve the utilization rate of domain.
The embodiment of the present invention is in the block by the second mould by the first module signal multiple to each second module transfer Register constitutes shift register, and under the control of the clock signal of shift register, the multiple signal is transmitted respectively To the multiple second module, the connecting line quantity solved in the prior art because of intermodule is more, influences chip area utilization The problem of rate, has achieved the effect that improve chip area utilization rate.
Embodiment two
Fig. 3 is nand flash memory chip domain arrangement schematic diagram provided by Embodiment 2 of the present invention, in above-mentioned technical proposal On the basis of, carry out further optimization.
When the first module is differed to the signal number of each second module transfer, each second mould register in the block Digit it is identical, and the digit is identical as the signal number needed for the largest number of second modules of desired signal.
Illustratively, the signal digit that multiple second modules receive the first module can be different, can also be Part is identical.As shown in figure 3, first the second module (the second module of left end) receives the first module in normal work Signal be signal 1- signals a, a total, second receives the first module with a second module of third in normal work Signal is signal 1- signals b, and b total, the 4th the second module (the second module of right end) receives first in normal work The signal of module is signal 1- signals c, c total.
In the present embodiment, if a>b>The register of identical digit can be then arranged in c in each second module, and Shift register is constituted under the control of clock control signal.Wherein, each second mould register digit in the block can be a, It is i.e. identical as the signal number needed for the largest number of second modules of desired signal, to ensure the normal work of shift register Make.
The present embodiment on the basis of the above embodiments, solves multiple second modules being connected with same first module In, respectively receive signal difference in the case of, be each second module configuration register when, only with reference in multiple second modules with First module carries out the most signal of signal transmission digit, and can ensure signal in this way stablizes transmission, and is being every When a second module configuration register, configuration register is carried out to each second module using identical production technology, is realized The production technology for simplifying nand flash memory chip, convenient for the advantageous effect of batch production and configuration.
Embodiment three
Fig. 4 is the nand flash memory chip domain arrangement schematic diagram that the embodiment of the present invention three provides, in above-mentioned technical proposal On the basis of, carry out further optimization.
When the first module is differed to the signal number of each second module transfer, each second mould register in the block Digit it is identical, and the digit is identical as the signal number needed for the largest number of second modules of desired signal.
Illustratively, as shown in figure 4, multiple second modules need the signal number for receiving the first module different, The signal that first the second module receives the first module in normal work is signal 1- signals a, a total, second and the The signal that three the second modules receive the first module in normal work is signal 1- signals b, b total, the 4th the second mould The signal that block receives the first module in normal work is signal 1- signals c, c total.
In the present embodiment, if a>b>C, then can for the second module according to the signal digit of transmission from more to few suitable Sequence is ranked up, and being linked in sequence from the near to the distant with the first module, and the digit of each second mould register in the block with Signal number needed for the second module of place is identical.As shown in figure 4, with the first module it is nearest be desired signal number be a Then second module is the second module that desired signal number is b and desired signal number is c successively, wherein due to required letter Number number is there are two the second modules of b, then the sequence of the two the second modules can be configured as needed, it can't Influence the normal transmission to signal data of shift register.The benefit being arranged in this way is:According to the operation principle of register, The signal of first module transfer is moved to right by a bit registers to b bit registers successively, then is moved to right to b and deposited by b bit registers Device is finally moved to right by b bit registers to c bit registers, thus can be higher than proximal end to avoid because of the register digit of distal end, And lead to the spilling of signal digit, can not normal transmission signal the problem of.Illustratively, as in Fig. 4, first the second module When (the second module of left end) and the signal digit of the first module transfer are 16, then 16 bit registers are configured for it, When second and third the second module (two intermediate the second modules) and the signal digit of the first module transfer are 8, then It is respectively that two the second modules configure eight bit registers for its configuration, the 4th the second module (the second module of right end) and the When the signal digit of one module transfer is 4, then 4 bit registers are configured for it, setting can be according to each second in this way The digit of signal transmission between module and the first module configures the register of corresponding digit for it, has saved the occupancy of register Area, and saved cost.
The present embodiment solves multiple second modules and receives signal different problems on the basis of the various embodiments described above, While improving domain utilization rate, the digit that signal can also be received according to each second module is configured corresponding digit Register, and ensure that the stability of signal transmission according to sorting to it, while having saved cost.
Note that above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that The present invention is not limited to specific embodiments described here, can carry out for a person skilled in the art it is various it is apparent variation, It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out to the present invention by above example It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also May include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.

Claims (4)

1. a kind of nand flash memory chip, the chip includes the first module and multiple second modules, and the first module is to each second The multiple signals of module transfer, which is characterized in that
Include register in each second module, multiple second mould registers in the block connect into shift register, the first mould Block is connected to the input terminal of the shift register, for passing through the shift register, and under clock control, successively to every Signal needed for a second module transfer, wherein complete the number and the second module of the clock cycle needed for whole signal transmissions Number it is identical.
2. chip according to claim 1, which is characterized in that
When signal number all same of first module to each second module transfer, the position of each second mould register in the block Number and the signal number all same.
3. chip according to claim 1, which is characterized in that
When the first module is differed to the signal number of each second module transfer, the position of each second mould register in the block Number is identical, and the digit is identical as the signal number needed for the largest number of second modules of desired signal.
4. chip according to claim 1, which is characterized in that
When the first module is differed to the signal number of each second module transfer, according to the signal number needed for the second module The second module, and each second mould register in the block are arranged from the near to the distant from more to few sequence, and with the first module Digit and each second module respectively required signal number is identical.
CN201710212610.1A 2017-04-01 2017-04-01 A kind of nand flash memory chip Pending CN108665930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710212610.1A CN108665930A (en) 2017-04-01 2017-04-01 A kind of nand flash memory chip

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Application Number Priority Date Filing Date Title
CN201710212610.1A CN108665930A (en) 2017-04-01 2017-04-01 A kind of nand flash memory chip

Publications (1)

Publication Number Publication Date
CN108665930A true CN108665930A (en) 2018-10-16

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630241A (en) * 1982-12-28 1986-12-16 Tokyo Shibaura Denki Kabushiki Kaisha Method of programming for programmable circuit in redundancy circuit system
US5566323A (en) * 1988-12-20 1996-10-15 Bull Cp8 Data processing system including programming voltage inhibitor for an electrically erasable reprogrammable nonvolatile memory
US6437768B1 (en) * 1997-04-23 2002-08-20 Sharp Kabushiki Kaisha Data signal line driving circuit and image display apparatus
US20010003418A1 (en) * 1999-12-09 2001-06-14 Shin Fujita Electro-optical device, clock signal adjusting method and circuit therefor, producing method therefor, and electronic equipment
CN101165759A (en) * 2001-08-29 2008-04-23 日本电气株式会社 Semiconductor device for driving current load device and current load device equipped with the same
JP2004152482A (en) * 2003-11-20 2004-05-27 Sharp Corp Shift register and image display device
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CN206672642U (en) * 2017-04-01 2017-11-24 北京兆易创新科技股份有限公司 A kind of nand flash memory chip

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