CN108628038B - Light emitting transistor, light emitting method thereof, array substrate and display device - Google Patents
Light emitting transistor, light emitting method thereof, array substrate and display device Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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Abstract
A light emitting transistor, a light emitting method thereof, an array substrate and a display device are provided. The light emitting transistor includes: a light emitting layer; a gate electrode disposed at one side of the light emitting layer; and the source electrode and the drain electrode are arranged on one side of the light-emitting layer far away from the grid electrode, the source electrode and the drain electrode respectively comprise first graphene oxide, the light-emitting layer comprises second graphene oxide, and the oxygen-carbon atomic ratio of the second graphene oxide is greater than that of the first graphene oxide. The light emitting transistor provides a novel light emitting element, and has the characteristics of high light emitting color purity, simple structure, low power consumption, light weight, thinness, flexible display and the like.
Description
Technical Field
Embodiments of the present disclosure relate to a light emitting transistor, a light emitting method thereof, an array substrate, and a display device.
Background
Graphene has been gradually applied to various fields in recent years due to its excellent characteristics of hard texture, high transparency, high thermal conductivity, high electron mobility, and the like. Graphene oxide (graphene oxide) is an oxide of graphene. The graphene oxide still keeps the layered structure of graphene, and has a high specific surface area and rich surface functional groups.
Disclosure of Invention
The embodiment of the disclosure provides a light emitting transistor, a light emitting method thereof, an array substrate and a display device. In the light emitting transistor, under the action of different direct current electric fields on the gate, different discrete energy levels (corresponding to light with different energies, namely light with different colors) can be formed in the light emitting layer made of the graphene oxide material, and under the action of the Poole-Frenkel effect, a large amount of positive charges (holes) are accumulated near the drain due to the movement of oxygen vacancy, and a large amount of negative charges (electrons) appear on the side, close to the source, of the light emitting layer due to the movement of electrons towards the source, so that a large electric field intensity is generated. When electrons and holes are recombined, light emission can be realized. The light emitting transistor provides a novel light emitting element, and has the characteristics of high light emitting color purity, simple structure, low power consumption, light weight, thinness, flexible display and the like.
At least one embodiment of the present disclosure provides a light emitting transistor including: a light emitting layer; a gate electrode disposed at one side of the light emitting layer; and the source electrode and the drain electrode are arranged on one side of the light-emitting layer far away from the grid electrode, the source electrode and the drain electrode respectively comprise first graphene oxide, the light-emitting layer comprises second graphene oxide, and the oxygen-carbon atomic ratio of the second graphene oxide is greater than that of the first graphene oxide.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, an atomic ratio of oxygen to carbon of the first graphene oxide is 0.3 to 0.4; the oxygen-carbon atomic ratio of the second graphene oxide is 0.51-0.60.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, the gate includes a third graphene oxide, and an atomic ratio of oxygen to carbon of the third graphene oxide is greater than an atomic ratio of oxygen to carbon of the second graphene oxide.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, an atomic ratio of oxygen to carbon of the third graphene oxide is 0.61 to 0.7.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, an orthogonal projection of the source and the drain on the light emitting layer falls within an orthogonal projection of the gate on the light emitting layer.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, the source electrode includes a plurality of first striped sub-electrodes, the drain electrode includes a plurality of second striped sub-electrodes, and the plurality of first striped sub-electrodes and the plurality of second striped sub-electrodes are alternately disposed at intervals.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, a width of each of the first stripe sub-electrodes ranges from 5 μm to 10 μm, and a width of each of the second stripe sub-electrodes ranges from 5 μm to 10 μm.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, a distance between the first and second stripe sub-electrodes adjacent to each other ranges from 10 μm to 200 μm.
For example, in a light emitting transistor provided in an embodiment of the present disclosure, the source electrode includes a first linear portion arranged in a spiral shape, and the drain electrode includes a second linear portion arranged in a spiral shape, and the first linear portion and the second linear portion are concentrically and alternately arranged at equal intervals.
At least one embodiment of the present disclosure provides an array substrate, including: the light-emitting diode comprises a substrate base plate and a light-emitting transistor arranged on the substrate base plate, wherein the light-emitting transistor is the light-emitting transistor.
For example, in an array substrate provided in an embodiment of the present disclosure, the array substrate further includes: the grid line is electrically connected with the grid; the common electrode wire is electrically connected with the drain electrode; and the data line is electrically connected with the source electrode.
For example, in the array substrate provided in an embodiment of the present disclosure, the substrate is a flexible substrate.
For example, in an array substrate provided in an embodiment of the present disclosure, the array substrate further includes: and the protective layer is arranged on one side of the light-emitting transistor, which is far away from the substrate base plate.
For example, in an array substrate provided in an embodiment of the present disclosure, the array substrate further includes: and the reflecting layer is arranged on one side of the substrate base plate, which is far away from the light-emitting transistor, or one side of the protective layer, which is far away from the light-emitting transistor.
At least one embodiment of the present disclosure further provides a display device including the array substrate of any one of the above.
At least one embodiment of the present disclosure also provides a light emitting method of a light emitting transistor, wherein the light emitting transistor includes the light emitting transistor described in any one of the above, the light emitting method including: applying a gate voltage to the gate; applying a pixel voltage to the source; applying a common voltage to the drain; and adjusting the magnitude of the gate voltage to control the color of light emitted by the light emitting transistor.
For example, in a light emitting method of a light emitting transistor provided in an embodiment of the present disclosure, the method further includes: and controlling the magnitude of the pixel voltage to control the brightness of the light emitted by the light emitting transistor.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description relate only to some embodiments of the present disclosure and are not limiting to the present disclosure.
Fig. 1 is a schematic plan view of a light emitting transistor according to an embodiment of the present disclosure;
fig. 2A is a schematic view of an emission spectrum of a light emitting transistor according to an embodiment of the present disclosure;
fig. 2B is a schematic diagram illustrating the light emitting intensity of a light emitting transistor according to an embodiment of the present disclosure;
fig. 3 is a schematic plan view of another light emitting transistor provided according to an embodiment of the present disclosure;
fig. 4 is a schematic plan view illustrating an array substrate according to an embodiment of the present disclosure;
fig. 5 is a schematic side view of an array substrate according to an embodiment of the present disclosure;
fig. 6A is a schematic diagram of a display device according to an embodiment of the disclosure;
fig. 6B is a schematic diagram of another display device provided in accordance with an embodiment of the present disclosure; and
fig. 7 is a flowchart of a light emitting method of a light emitting transistor according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
In a general liquid crystal display structure, since liquid crystal itself does not emit light, it is necessary to provide components such as a backlight, a polarizer, and a color filter to realize light emission and color display. Therefore, a general liquid crystal display has a complicated structure and a large volume. On the other hand, since light emitted from the backlight source is emitted through a plurality of film layers, liquid crystals, polarizers, and other components, the energy loss of a general liquid crystal display structure is large, and the final light emitting efficiency is low. In addition, the backlight source generally adopts a blue light emitting LED chip to cooperate with red and green phosphors to achieve white light emission, and the phosphor has a wide light emission spectrum, so that the color gamut of a general liquid crystal display structure is low.
In the research, the inventors of the present application found that in a light emitting transistor device made of a graphene oxide material with a certain degree of oxidation, a light emitting layer can emit light of different wavelengths (450-.
Accordingly, the embodiment of the present disclosure provides a light emitting transistor, a light emitting method thereof, an array substrate and a display device. The light emitting transistor includes: a light emitting layer; a gate electrode disposed at one side of the light emitting layer; and the source electrode and the drain electrode are arranged on one side of the light-emitting layer far away from the grid electrode, the source electrode and the drain electrode respectively comprise first graphene oxide, the light-emitting layer comprises second graphene oxide, and the oxygen-carbon atomic ratio of the second graphene oxide is greater than that of the first graphene oxide. In the light emitting transistor, under the action of different direct current electric fields on the gate, different discrete energy levels (corresponding to light with different energies, namely light with different colors) can be formed in the light emitting layer made of the graphene oxide material, and under the action of the Poole-Frenkel effect, a large amount of positive charges (holes) are accumulated near the drain due to the movement of oxygen vacancy, and a large amount of negative charges (electrons) appear on the side, close to the source, of the light emitting layer due to the movement of electrons towards the source, so that a large electric field intensity is generated. When electrons and holes are recombined, light emission can be realized. The light emitting transistor provides a novel light emitting element, and has the characteristics of high light emitting color purity, simple structure, low power consumption, light weight, thinness, flexible display and the like.
The following describes a light emitting transistor, a light emitting method thereof, an array substrate, and a display device provided in an embodiment of the present disclosure in detail with reference to the accompanying drawings.
Fig. 1 is a schematic plan view of a light emitting transistor according to an embodiment of the present disclosure. As shown in fig. 1, the light emitting transistor includes a light emitting layer 110, a gate electrode 120, a source electrode 130, and a drain electrode 140. The gate electrode 120 is disposed at one side of the light emitting layer 110; the source 130 and the drain 140 are disposed on a side of the light emitting layer 110 away from the gate 120. The source electrode 130 and the drain electrode 140 respectively include first graphene oxide, and the light emitting layer 110 includes second graphene oxide having an atomic ratio of oxygen to carbon greater than that of the first graphene oxide.
In the light emitting transistor provided in this embodiment, under the action of different dc electric fields on the gate electrode 120, different discrete energy levels (corresponding to light with different energies, that is, light with different colors) can be formed in the light emitting layer 110 made of the graphene oxide material, and under the action of the Poole-frenkeffect, a large amount of positive charges (holes) are accumulated near the drain electrode 140 due to the movement of oxygen vacancy, and a large amount of negative charges (electrons) appear on the side of the light emitting layer 110 close to the source electrode 130 due to the movement of electrons toward the source electrode 130, thereby generating a large electric field intensity. When electrons and holes are recombined, light emission can be realized. The light emitting transistor provides a novel light emitting element. The light emitting transistor is an active light emitting display structure and can emit different colors of light under the action of different direct current electric fields on the grid, so that the light emitting transistor does not need to be provided with components such as a backlight source, a color filter, a polaroid and the like, and has the advantages of simple structure, thinness, light weight, flexible display and the like. In addition, the light emitted by the light-emitting transistor can be displayed without components such as a color filter, a polarizer and the like, so that the light-emitting transistor also has the advantages of high light-emitting efficiency, low power consumption and the like. On the other hand, since the color of light emitted from the light-emitting layer can be controlled by controlling the magnitude of the voltage on the gate electrode, the light-emitting transistor also has advantages such as high color purity.
Fig. 2A is a schematic view of an emission spectrum of a light emitting transistor according to an embodiment of the present disclosure. As shown in fig. 2A, applying different gate voltages to the gates may cause the emission spectra of the light emitting transistors to be different; when the gate voltage is about 55V, the light-emitting transistor emits blue light (with the wavelength of 400-. Note that, in order to clearly express the change in the emission spectrum of the light-emitting transistor, the emission intensity in fig. 2A is subjected to normalization processing.
Fig. 2B is a schematic diagram of the light emitting intensity of a light emitting transistor according to an embodiment of the disclosure. As shown in fig. 2B, different bias voltages applied to the source and the drain can make the light emitting transistors emit different intensities of light; as shown, when the source-drain bias voltage is increased, the light emission intensity of the light emitting transistor is also increased. Note that, in order to clearly express the change in the emission spectrum of the light-emitting transistor, the emission intensity in fig. 2B is subjected to normalization processing.
For example, in some examples, the first graphene oxide has an atomic ratio of oxygen to carbon of 0.3-0.4; the oxygen-carbon atomic ratio of the second graphene oxide is 0.51-0.60. Thereby improving the light emitting efficiency of the light emitting transistor.
For example, in some examples, gate 120 includes a third graphene oxide having an atomic ratio of oxygen to carbon that is greater than an atomic ratio of oxygen to carbon of the second graphene oxide. Thereby improving the light emitting efficiency of the light emitting transistor. When the oxidation degree (e.g., oxygen-to-carbon atomic ratio) of the graphene oxide is low, that is, the oxidation degree of the first graphene oxide of the source electrode 130 and the drain electrode 140 is low, the band gap is narrow and close to 0; when the oxidation degree (e.g., atomic ratio of oxygen to carbon) of the graphene oxide is high, that is, when the oxidation degree of the third graphene oxide of the gate electrode 120 is high, the band gap is large, and it is difficult to directly emit light under the conventional electric or photo-induced action, while the light emitting layer of the graphene oxide having an intermediate oxygen degree (e.g., atomic ratio of oxygen to carbon) has a special dispersion level, and radiation transition can occur under the electric or photo-induced action. In addition, when the grid voltage is changed, the Fermi level of the grid voltage is correspondingly changed, so that the band gap of the transition layer is changed, and the light-emitting color is changed.
For example, in some examples, the third graphene oxide has an atomic ratio of oxygen to carbon of 0.61-0.7. Thereby improving the light emitting efficiency of the light emitting transistor. It should be noted that the gate electrode 120 may also be made of other conductive materials, and the embodiments of the present disclosure are not limited herein.
For example, in some examples, the gate electrode may include a reflective metallic material, such that the gate electrode may also act as a reflective layer to reflect light emitted by the light-emitting layer toward the gate electrode while the dc electric field is applied.
For example, in some examples, as shown in fig. 1, the orthographic projection of the source 130 and the drain 140 on the light emitting layer 110 falls within the orthographic projection of the gate 120 on the light emitting layer 110, so that the light emitting layer 110 where the source 130 and the drain 140 are located is ensured to be under the action of the direct current electric field on the gate 120.
For example, in some examples, as shown in fig. 1, the source electrode 130 includes a plurality of first striped sub-electrodes 131, the drain electrode 140 includes a plurality of second striped sub-electrodes 141, and the plurality of first striped sub-electrodes 131 and the plurality of second striped sub-electrodes 141 are alternately disposed at intervals. When the plurality of first and second striped sub-electrodes 131 and 141 are alternately disposed at intervals, on one hand, the adjacent first and second striped sub-electrodes 131 and 141 are closer to each other, so that the excited electrons and holes are more easily combined and emit light, and on the other hand, the plurality of first and second striped sub-electrodes 131 and 141 are alternately disposed at intervals, so that the light emitting area of the light emitting transistor can be increased.
For example, in some examples, the width of each first stripe sub-electrode ranges from 5 μm to 10 μm, and the width of each second stripe sub-electrode ranges from 5 μm to 10 μm. Because the light-emitting layer covered by the first strip-shaped electrode or the second strip-shaped electrode has relatively poor light-emitting effect, the light-emitting area of the light-emitting layer can be increased by setting the width of the first strip-shaped sub-electrode or the second strip-shaped sub-electrode to be 5-10 μm in consideration of process conditions, and the manufacturing cost is low.
For example, in some examples, the distance between adjacent first and second striped sub-electrodes ranges from 10 μm to 200 μm. Since the difficulty of recombination of holes and electrons increases when the distance between the first and second striped sub-electrodes is large, setting the distance between the adjacent first and second striped sub-electrodes to be in the range of 10 μm to 200 μm makes the light emitting transistor high in light emitting efficiency and relatively large in light emitting area of the light emitting layer.
For example, in some examples, as shown in fig. 1, the light emitting transistor further includes: a gate line 150, a common electrode line 160, and a data line 170. The gate line 150 is electrically connected to the gate electrode 120, the common electrode line 160 is electrically connected to the drain electrode 140, and the data line 170 is electrically connected to the source electrode 130. The gate line 150 may apply a control voltage to the gate electrode 120 to control the color of light emitted from the light emitting diode; the common electrode line 160 and the data line 170 apply voltages to the drain electrode 140 and the source electrode 130, respectively, such that the movement of oxygen vacancies will accumulate a large amount of positive charges (holes) near the drain electrode 140, and the movement of electrons toward the source electrode 130 will appear a large amount of negative charges (electrons) at the side of the light emitting layer 110 adjacent to the source electrode 130. The light emitting intensity of the light emitting transistor can be adjusted by changing the voltage difference between the drain electrode 140 and the source electrode 130.
Fig. 3 is a schematic plan view of another light emitting transistor provided according to an embodiment of the present disclosure. As shown in fig. 3, in the light emitting transistor, the source electrode 130 includes a first linear portion 132 arranged spirally, the drain electrode 140 includes a second linear portion 142 arranged spirally, and the first linear portion 132 and the second linear portion 142 are concentrically and alternately arranged at equal intervals. When the first linear portions 132 and the second linear portions 142 are concentrically and alternately arranged at equal intervals, on one hand, the adjacent first linear portions 132 and the second linear portions 142 are closer to each other, so that excited electrons and holes are more easily combined and emit light, and on the other hand, the first linear portions 132 and the second linear portions 142 arranged in a spiral shape can fill a larger area of the light emitting layer 110, so that the light emitting area of the light emitting transistor can be increased.
For example, in some examples, as shown in fig. 3, the first linear portions 132 are arranged in a rectangular spiral, and the second linear portions 142 are also arranged in a rectangular spiral. Of course, the embodiments of the present disclosure include, but are not limited to, the first linear portion 132 and the second linear portion 142 may also be arranged in a circular spiral shape, and a specific spiral arrangement manner may be designed according to a shape of a light emitting layer of the light emitting transistor.
For example, in some examples, the width of each first linear portion ranges from 5 μm to 10 μm, and the width of each second linear portion ranges from 5 μm to 10 μm. Since the light emitting layer covered by the first linear portion or the second linear portion has a relatively poor light emitting effect, setting the width of the first linear portion or the second linear portion to be 5 μm to 10 μm can increase the light emitting area of the light emitting layer in consideration of process conditions, and has a low manufacturing cost.
For example, in some examples, the distance between adjacent first and second linear portions ranges from 10 μm to 200 μm. Since the difficulty of recombination of holes and electrons increases when the distance between the first linear portion and the second linear portion is large, setting the distance between the adjacent first linear portion and second linear portion to be in the range of 10 μm to 200 μm makes it possible to make the light emitting transistor high in light emission efficiency and also relatively large in light emission area of the light emitting layer.
Fig. 4 is a schematic plan view of an array substrate according to an embodiment of the present disclosure. As shown in fig. 4, the array substrate includes a substrate 210 and a light emitting transistor 100 disposed on the substrate 210. The light emitting transistor 100 is the light emitting transistor described in any of the above embodiments. In the light emitting transistor, under the action of different direct current electric fields on the gate, different discrete energy levels (corresponding to light with different energies, that is, light with different colors) can be formed in the light emitting layer made of the graphene oxide material, and under the action of the Poole-Frenkel effect, a large amount of positive charges (holes) are accumulated near the drain by the movement of oxygen vacancy, and a large amount of negative charges (electrons) appear on the side of the light emitting layer close to the source by the movement of electrons towards the source 130, so that a large electric field intensity is generated. When electrons and holes are recombined, light emission can be realized. The light emitting transistor is an active light emitting display structure and can emit light of different colors under the action of different direct current electric fields on the grid electrode. Therefore, the array substrate can provide an active light-emitting array substrate, and components such as a backlight source, a color filter, a polarizer and the like are not required to be arranged, so that the array substrate has the advantages of simple structure, light weight, thinness, capability of being used for flexible display and the like. In addition, because the light emitted by the light emitting transistor can be displayed without components such as a color filter, a polarizer and the like, the array substrate also has the advantages of higher luminous efficiency, lower power consumption and the like. On the other hand, the array substrate has the advantages of high color purity and the like because the color of light emitted by the light-emitting layer can be controlled by controlling the voltage on the grid electrode.
For example, in some examples, the substrate may employ a glass substrate, a plastic substrate, a quartz substrate, or the like.
For example, in some examples, the substrate base may be a flexible substrate base to enable a flexible display. For example, the substrate may be made of a flexible material such as polyimide.
For example, in some examples, as shown in fig. 4, a plurality of light emitting transistors 100 are arrayed on a substrate base 210. Therefore, the driving can be carried out in a row-by-row or column-by-column mode, and finally, the picture display is realized in a time sequence synthesis mode.
Fig. 5 is a schematic side view of an array substrate according to an embodiment of the present disclosure. As shown in fig. 5, the array substrate further includes a protection layer 220 disposed on a side of the light emitting transistor 100 away from the substrate 210. The protection layer 220 can prevent external water and oxygen from corroding the light emitting transistor 100, thereby protecting the light emitting transistor 100 and prolonging the service life of the array substrate.
In the array substrate provided in this embodiment, since the light emitting layer 110, the gate 120, the source 130, and the drain 140 in the light emitting transistor 100 can be made of graphene oxide, the light emitting transistor 100 is transparent, and can achieve double-sided light emission, that is, both the side of the light emitting layer close to the gate and the side of the light emitting layer far from the gate can emit light.
For example, in some examples, as shown in fig. 6A, the array substrate further includes a reflective layer 230 disposed on one side of the substrate 210 away from the light emitting transistor 100 or one side of the protective layer 230 away from the light emitting transistor 100, so that in the case that the light emitting transistor 100 is double-sided light emitting, single-sided light emitting of the array substrate is achieved, thereby facilitating application in a general display device. On the other hand, the reflective layer 230 may reflect light emitted toward the reflective layer 230, so that the brightness of the light emitting side of the array substrate may be improved.
For example, the reflectivity of the reflective layer 230 is not less than 80%, so that light directed to the reflective layer 230 can be efficiently utilized.
For example, the reflective layer 230 may be made of BaSO 4. Of course, the embodiments of the present disclosure include, but are not limited to, the reflective layer may also be made of other metal reflective materials, such as silver.
For example, in some examples, as shown in fig. 6B, the array substrate further includes a cover glass 290 disposed on a side of the protection layer 220 away from the light emitting transistors 100, so as to protect the plurality of light emitting transistors 100. Fig. 6B is a schematic diagram of a display device according to an embodiment of the disclosure. As shown in fig. 6B, the display device includes the array substrate 200 described in any of the above embodiments. In the light emitting transistor in the array substrate 200, under the action of different direct current fields on the gate, different discrete energy levels (corresponding to light with different energies, that is, light with different colors) can be formed in the light emitting layer made of the graphene oxide material, and under the action of the Poole-Frenkel effect, a large amount of positive charges (holes) are accumulated near the drain due to the movement of oxygen vacancy, and a large amount of negative charges (electrons) appear on the side of the light emitting layer close to the source due to the movement of electrons towards the source, thereby generating a large electric field intensity. When electrons and holes are recombined, light emission can be realized. Therefore, the display device can also provide an active light-emitting display device, and components such as a backlight source, a color filter, a polarizer and the like are not required to be arranged, so that the display device has the advantages of simple structure, light weight, thinness, applicability to flexible display and the like. In addition, because the light emitted by the light-emitting transistor can be displayed without components such as a color filter, a polarizer and the like, the display device also has the advantages of higher luminous efficiency, lower power consumption and the like. On the other hand, since the color of light emitted from the light-emitting layer can be controlled by controlling the magnitude of the voltage on the gate electrode, the display device also has advantages of high color purity and the like.
For example, in some examples, the display device further includes a gate driving circuit 310 and a source driving circuit 320. For example, the gate driving circuit 310 and the source driving circuit 320 may each employ a Printed Circuit Board (PCB).
For example, in some examples, the display device may be a mobile phone, a computer, a tablet computer, a notebook computer, a navigator, a television, an electronic photo frame, and other electronic devices. Of course, the display device in the embodiments of the present disclosure includes, but is not limited to, any device and component having a display function.
For example, in some examples, the display device is a flexible display device, and thus may be applied in a wearable display device.
An embodiment of the present disclosure also provides a light emitting method of the light emitting transistor. The light emitting transistor may be the light emitting transistor described in any of the above embodiments. Fig. 7 is a flowchart of a light emitting method of a light emitting transistor according to an embodiment of the present disclosure. As shown in fig. 7, the light emitting method of the light emitting transistor includes:
step S101: a gate voltage is applied to the gate.
For example, a gate driving circuit is used to apply a gate voltage to the gate electrode, and the magnitude of the gate voltage can be set according to the specific structure of the light emitting transistor.
Step S102: a pixel voltage is applied to the source.
For example, a source driver circuit is used to apply a pixel voltage to the source electrode, and the magnitude of the pixel voltage can be set according to the specific structure of the light emitting transistor and the desired brightness.
Step S103: a common voltage is applied to the drain.
Step S104: the magnitude of the gate voltage is adjusted to control the color of light emitted by the light emitting transistor.
In the light emitting method of the light emitting transistor provided in this embodiment, a gate voltage applied to the gate may generate a dc electric field, the light emitting layer made of a graphene oxide material may form different discrete energy levels (corresponding to light with different energies, that is, light with different colors) under the action of different dc electric fields on the gate, and under the action of the Poole-Frenkel effect, a large amount of positive charges (holes) may be accumulated near the drain due to the movement of oxygen vacancy, and a large amount of negative charges (electrons) may appear on the side of the light emitting layer close to the source due to the movement of electrons toward the source, thereby generating a large electric field intensity. When electrons and holes are recombined, light emission can be realized. The color of light emitted by the light emitting transistor is controlled by adjusting the magnitude of the gate voltage. The above steps S101 to S104 are not limited to the order of implementation, that is, the light emitting method is not limited to the order of steps S101 to S104, and other orders may be adopted according to actual situations.
For example, a first gate voltage is applied to the gate electrode to cause the light emitting transistor to emit light of a first color, such as red light; applying a second gate voltage to the gate electrode to cause the light emitting transistor to emit light of a second color, for example, green light; a third gate voltage is applied to the gate electrode to cause the light emitting transistor to emit a third color light, such as blue light. The first gate voltage, the second gate voltage, and the third gate voltage may be specific values or may be a range of values.
For example, in some examples, the method of emitting light by the light emitting transistor further includes controlling a magnitude of the pixel voltage to control a luminance of light emitted by the light emitting transistor.
The following points need to be explained:
(1) in the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are referred to, and other structures may refer to general designs.
(2) Features of the disclosure in the same embodiment and in different embodiments may be combined with each other without conflict.
The above is only a specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present disclosure, and shall be covered by the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (16)
1. A light emitting transistor comprising:
a light emitting layer;
a gate electrode disposed at one side of the light emitting layer; and
a source electrode and a drain electrode disposed on a side of the light emitting layer away from the gate electrode,
wherein the source electrode and the drain electrode respectively comprise first graphene oxide, the light-emitting layer comprises second graphene oxide, the oxygen-carbon atom number ratio of the second graphene oxide is greater than that of the first graphene oxide,
the source electrode comprises a plurality of first strip-shaped sub-electrodes, the drain electrode comprises a plurality of second strip-shaped sub-electrodes, and the plurality of first strip-shaped sub-electrodes and the plurality of second strip-shaped sub-electrodes are alternately arranged at intervals.
2. The light emitting transistor according to claim 1, wherein the first graphene oxide has an oxygen-to-carbon atom number ratio of 0.3 to 0.4; the second graphene oxide has an oxygen-to-carbon atom number ratio of 0.51 to 0.60.
3. The light emitting transistor of claim 1, wherein the gate electrode comprises a third graphene oxide having a larger oxygen to carbon atomic number ratio than the second graphene oxide.
4. The light-emitting transistor according to claim 3, wherein the third graphene oxide has an oxygen-to-carbon atom number ratio of 0.61 to 0.7.
5. The light emitting transistor according to any one of claims 1 to 4, wherein an orthogonal projection of the source electrode and the drain electrode on the light emitting layer falls within an orthogonal projection of the gate electrode on the light emitting layer.
6. The light emitting transistor of claim 1, wherein each of the first stripe sub-electrodes has a width ranging from 5 μm to 10 μm, and each of the second stripe sub-electrodes has a width ranging from 5 μm to 10 μm.
7. The light emitting transistor according to claim 6, wherein a distance between the adjacent first and second stripe sub-electrodes ranges from 10 μm to 200 μm.
8. The light emitting transistor according to any one of claims 1 to 4, wherein the source electrode includes a first linear portion arranged spirally, and the drain electrode includes a second linear portion arranged spirally, the first linear portion and the second linear portion being concentrically and alternately arranged at equal intervals.
9. An array substrate, comprising: a substrate base plate and a light emitting transistor disposed on the substrate base plate, the light emitting transistor being according to any one of claims 1-8.
10. The array substrate of claim 9, further comprising:
the grid line is electrically connected with the grid;
the common electrode wire is electrically connected with the drain electrode; and
and the data line is electrically connected with the source electrode.
11. The array substrate of claim 9, wherein the substrate is a flexible substrate.
12. The array substrate of claim 9, further comprising: and the protective layer is arranged on one side of the light-emitting transistor, which is far away from the substrate base plate.
13. The array substrate of claim 12, further comprising:
and the reflecting layer is arranged on one side of the substrate base plate, which is far away from the light-emitting transistor, or one side of the protective layer, which is far away from the light-emitting transistor.
14. A display device comprising the array substrate according to any one of claims 9 to 13.
15. A light emitting method of a light emitting transistor, wherein the light emitting transistor comprises the light emitting transistor according to any one of claims 1 to 8, the light emitting method comprising:
applying a gate voltage to the gate;
applying a pixel voltage to the source;
applying a common voltage to the drain;
wherein the color of the light emitted by the light emitting transistor is controlled by adjusting the magnitude of the gate voltage.
16. The light emitting method of the light emitting transistor according to claim 15, further comprising:
and controlling the magnitude of the pixel voltage to control the brightness of the light emitted by the light emitting transistor.
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