CN108598632A - A kind of SIW-CPW ultra-wide band filters with double zero Wide stop bands - Google Patents
A kind of SIW-CPW ultra-wide band filters with double zero Wide stop bands Download PDFInfo
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- CN108598632A CN108598632A CN201810313733.9A CN201810313733A CN108598632A CN 108598632 A CN108598632 A CN 108598632A CN 201810313733 A CN201810313733 A CN 201810313733A CN 108598632 A CN108598632 A CN 108598632A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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- H01P1/20—Frequency-selective devices, e.g. filters
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Abstract
The invention discloses a kind of SIW CPW ultra-wide band filters with double zero Wide stop bands, including at least two resonant elements；Resonant element includes SIW structures and CPW structures；The SIW structures include top-level metallic plate, bottom metal and the middle dielectric layer between the top-level metallic plate and the bottom metal；Metal throuth hole is also embedded in middle dielectric layer；The upper and lower ends of metal throuth hole are connected with top-level metallic plate, bottom metal respectively；The CPW structure settings are on the top-level metallic plate.Passband zero is adjusted with independence and flexibility the present invention up and down, realizes the transmission zero of low passband internal loss and high steepness, lower energy loss is realized while ensureing broadband performance.
Description
Technical field
The present invention relates to filters, and in particular to a kind of SIW-CPW ultra-wide band filters with double zero Wide stop bands.
Background technology
Since 2002 Federal Communications Commission (FCC) have approved the business of ultrabroad-band spectrum (3.1-10.6GHz)
Since changing use, the super-broadband tech that can be applied to high rate communication and high-accuracy position system receives academia and industry system
Make the extensive concern in field.As the important component in the systems such as modern ultrahigh speed wireless communication and radar, low-loss, width are had both
The ultra-wide band filter of the performances such as stopband and precipitous cut-off region has become the hot spot of super-broadband tech research.So far there are many
High performance ultra-wide band filter structure is suggested with design method.
The design method coupled using multi-resonant chamber (MMR) has been demonstrated achievable broad passband characteristic, and just due to it
Victory and high efficiency, this method become most common ultra-wide band filter design method.However, multi-resonant cavity filter usually has
There is relatively narrow bandwidth of rejection, the stopband of two delivered at present multi-resonant cavity filter is respectively 8.4-11.7GHz and 11.5-
15.0GHz or so.In order to further expand the bandwidth of rejection of MMR filters, generally use minor matters support structures, the parallel coupling of micro-strip
The structures such as zygonema and broadside coupled microstrip line/co-planar waveguide (BCMC), but the increasing of increase or the loss of size is also resulted in simultaneously
Add.Such as：The bandwidth of rejection of 25GHz or more is realized using the multi-resonant cavity filter of minor matters support structures, but it encapsulates ruler
It is very little to have reached 20mm × 70mm or so.A kind of multi-resonant cavity filter using micro-strip parallel coupled line structure realizes width simultaneously
Stopband and preferable passband steepness, but the increase of insertion loss is also resulted in simultaneously, the insertion damage at center operating frequency
Consumption has reached 3.7dB.
In addition to multi-resonant cavity filter, many other methods is also used for the design of ultra-wide band filter.Utilize low temperature
Common burning porcelain (LTCC) technology, it has therefore proved that ultra wide band characteristic can be realized using quarter-wavelength stub resonator, and led to
Precipitous pass-band performance can be realized by crossing cross coupling structure.But this design method is limited to the development of LTCC technology at present
And structure design is more complicated, it is difficult to universal.Parallel coupling step electric impedance resonator (SIR) is also used for ultra-wide band filter and sets
Meter, it is respectively 6.4 × 72.8 × 0.5mm to have been achieved with size3With 14.3 × 41.9 × 0.5mm3Filter.In addition, compound
The structures such as left/right hand structure and terminal cross-like resonator are also applied among the design of ultra-wide band filter recently.
Invention content
In order to be improved to the prior art, the present invention proposes a kind of SIW-CPW ultra-wide with double zero Wide stop bands
Band filter.The invention belongs to handle the ultra wide band resonator/filter of electromagnetic signal (being typically radiofrequency signal), more particularly to
One kind being based on substrate integration wave-guide-co-planar waveguide (SIW-CPW) structure, has the resonator/filter of double zero ultra wide bands, packet
Include a series of external control unit outside being made of resonator/filter working frequency control elements.
Technical scheme is as follows：
A kind of SIW-CPW ultra-wide band filters with double zero Wide stop bands, including at least two can independently carry out zero
The resonant element of control；Resonant element includes SIW structures and CPW structures；The SIW structures include top-level metallic plate, bottom gold
Belong to plate and the middle dielectric layer between the top-level metallic plate and the bottom metal；It is also embedded in middle dielectric layer
There is metal throuth hole；The upper and lower ends of metal throuth hole are connected with top-level metallic plate, bottom metal respectively；The CPW structures are set
It sets on the top-level metallic plate.
Its further technical solution is：Intermediate metal film is also embedded in the middle dielectric layer.
Its further technical solution is：Middle dielectric layer includes that top dielectric layer, underlying dielectric layers are situated between with upper layer is bonded
Bonding sheet between matter layer and underlying dielectric layers；Intermediate metal film is embedded among bonding sheet；Intermediate metal film in bonding sheet and
Between top dielectric layer.
Its further technical solution is：First resonant element is three layers of resonant element；Second resonant element is humorous two layers
Shake unit；Intermediate metal film is embedded in the middle dielectric layer of first resonant element.
Its further technical solution is：The CPW structures are periodic.
Its further technical solution is：The top-level metallic plate includes input port and output port, input port with
Output port is symmetrical.
Its further technical solution is：Further include the capacitive line of rabbet joint on the top-level metallic plate；Two resonant elements
The capacitive line of rabbet joint it is of different size.
Its further technical solution is that N number of filter is coupled as N rank filters；The input terminal of first filter
Input port of the mouth as multi-stage filter；The output port of (n-1)th filter is connect with the input port of the n-th filter, 2≤
N≤N, the output port of the output port of N filter as N rank filters.
The method have the benefit that：
The filter of the present invention have the advantages that it is numerous, one of advantage be the independence that upper and lower passband zero is adjusted and
Flexibility.The zero of upper and lower passband is generated by two completely self-contained resonant elements, therefore can be to the position of two zeros
It sets and is individually adjusted；The position of zero is influenced by several parameters, can be by adjusting the value of parameters neatly
Adjust the position of two zeros.
Present invention combination SIW structures high q-factor, low-loss characteristic realize low passband internal loss and high steepness
Transmission zero.
Traditional periodic defect ground structure (DGS, Defected ground structure) have been demonstrated have compared with
Good band-stop response, but since the structure is typically designed on earth plate, the increase for often causing energy to radiate, and not
It is applicable to the high-frequency circuit equipment of relatively large grounded plate.In order to solve this problem, the present invention is by periodic CPW structure designs
On top-level metallic plate, lower energy loss is realized while ensureing broadband performance, and increases filter ground connection
The area of plate.
Description of the drawings
Fig. 1 is the threedimensional model schematic diagram of the ultra-wide band filter based on SIW-CPW structures.
Fig. 2 is the top view of filter shown in Fig. 1.
Fig. 3 is filter shown in Fig. 1 along the sectional view in the directions A-A '.
Fig. 4 is the schematic three dimensional views and its equivalent-circuit model of three layers of resonant element of filter shown in Fig. 1.
Fig. 5 is the position of lower pass band transfer zero with the S21 parameter curves of intermediate metal film change width.
Fig. 6 is the position of lower pass band transfer zero with the S21 parameter curves of intermediate metal film height change.
Fig. 7 is the position of lower pass band transfer zero with the line chart of intermediate metal film width and height change rule.
Fig. 8 is the schematic three dimensional views and its equivalent-circuit model of two layers of resonant element of filter shown in Fig. 1.
Fig. 9 is the position of upper pass band transfer zero with the S21 parameter curves of capacitive line of rabbet joint change width.
Figure 10 is the schematic three dimensional views for another second order ultra-wide band filter that present invention design is realized.
Figure 11 is emulation and the test S parameter comparison diagram of filter shown in Figure 10.
Specific implementation mode
The present invention is to provide one kind being based on SIW-CPW (Substrate Integrated Waveguide-Coplanar
Waveguide, substrate integration wave-guide-co-planar waveguide) structure ultra-wide band filter.Filtering as described below in the present invention
Device can also be referred to as resonator.
Fig. 1 is the threedimensional model schematic diagram of the ultra-wide band filter based on SIW-CPW structures.As shown in Figure 1, packet of the present invention
Include at least two independent Zero magnitude control resonant elements.In the present embodiment, including two independent Zero magnitude control resonant elements：
First resonant element 600 and the second resonant element 700, two transmission zero are respectively that lower pass band transfer zero and upper passband pass
Defeated zero.
Resonant element includes SIW structures and CPW structures.
Top-level metallic plate 100, middle dielectric layer 200, bottom metal 300 and metal throuth hole 400 are collectively formed with high Q
Value, the SIW structures of low loss characteristic can reduce the passband internal loss of filter and improve the steepness of two transmission zeros.Tool
Body, middle dielectric layer 200 is between top-level metallic plate 100 and bottom metal 300.It is also embedded in middle dielectric layer 200
There is metal throuth hole 400.Metal throuth hole 400 is mutually perpendicular to top-level metallic plate 100, bottom metal 300, on metal throuth hole 400
Lower both ends are connected with top-level metallic plate 100, bottom metal 300 respectively.
Further, as shown in Figure 1, intermediate metal film 500 can be embedded in the middle dielectric layer 200 of SIW structures.
In the present embodiment, the embedded intermediate metal film 500 in the first resonant element 600, and the second resonant element 700 is without embedded intermediate
Sheet metal.
Fig. 2 is the top view of filter shown in Fig. 1.As shown in Figure 1, top-level metallic plate 100 includes 101 He of input port
Output port 102.It is connected with CPW structures 103 at input port 101, CPW structures 103 are connected at output port 102.
CPW structures 103 be specifically design it is on top-level metallic plate, be connected to input port side or output port side
Slot.Midline between input port 101 and output port 102 is provided with the capacitive line of rabbet joint 104a, 104b.
Further, CPW structures 103 are that have periodically.
Further, on the basis of the center line between input port 101 and output port 102, the capacitive line of rabbet joint 104a, 104b
Figure be symmetrical；The figure of input port 101 and output port 102 is symmetrical；CPW structures at input port 101
103 and output port 102 at the figures of CPW structures 103 be symmetrical.With between input port 101 and output port 102
On the basis of center line, the arrangement position of metal throuth hole 400, quantity are also symmetrical.
Further, on the basis of the center line between the first resonant element and the second resonant element, capacitive line of rabbet joint 104a,
The figure of 104b is symmetrical, and still, the width of capacitive line of rabbet joint 104a and capacitive line of rabbet joint 104b can be different；Input port 101
Figure with output port 102 is symmetrical；The CPW structures at CPW structures 103 and output port 102 at input port 101
103 figure is symmetrical.On the basis of center line between the first resonant element and the second resonant element, metal throuth hole 400
Arrangement position, quantity are also symmetrical.
The periodic CPW structures 103 designed on top-level metallic plate 100 have broad stop-band, can be in filter
With one wider stopband of outer introducing, the high-frequency noise rejection ability of filter is improved；And the energy spoke of filter can be reduced
It penetrates, while making filter that there is larger earth plate, be applied in high-frequency circuit system convenient for filter.
Fig. 3 is filter shown in Fig. 1 along the sectional view in the directions A-A '.As shown in figure 3, the middle dielectric layer of the filter
200 specifically include top dielectric layer 201, underlying dielectric layers 203 and bond between top dielectric layer 201 and underlying dielectric layers 203
Bonding sheet 202.Top dielectric layer 201 and underlying dielectric layers 203 are the RO4350 planks of standard, and bonding sheet 202 is
The special bonding sheet of RO4350 planks has property similar with RO4350 planks.
When resonant element includes intermediate metal film 500, intermediate metal film 500 is embedded in bonding sheet 202 and is situated between with upper layer
Among matter layer 201.In the present embodiment, in the middle of bonding sheet 202, there are one width is equal with 500 width of intermediate metal film
Groove, intermediate metal film 500 is embedded in bonding sheet 202, and on the thickness of intermediate metal film 500 and bonding sheet 202
The thickness of groove is identical.Top dielectric layer 201 is covered on intermediate metal film 500 and bonding sheet 202 again.
Fig. 4 is the schematic three dimensional views and its equivalent-circuit model of three layers of resonant element of filter shown in Fig. 1.Fig. 5 is Fig. 1
The schematic three dimensional views and its equivalent-circuit model of two layers of resonant element of shown filter.As shown in Figure 4, Figure 5, in the present embodiment
In, filter can provide two resonant elements of two precipitous transmission zeros, and the first resonant element 600 is three layers of resonant element,
Second resonant element 700 is two layers of resonant element.
As shown in figure 4, the first resonant element 600 of the filter includes top-level metallic plate 601,603 and of underlying metal plate
Middle dielectric layer 602 between top-level metallic plate 601, underlying metal plate 603.Metal is embedded in middle dielectric layer 602
Through-hole 604.Intermediate metal film 605 is also embedded in middle dielectric layer 602.The wherein structure of the capacitive line of rabbet joint 606 is in top-level metallic plate
On 601.
It is equivalent to capacity plate antenna between top-level metallic plate 601 and intermediate metal film 605.Intermediate metal film 605 and bottom gold
It is equivalent to capacity plate antenna between category plate 603.Metal throuth hole 604 is equivalent to inductance.The capacitive line of rabbet joint 602 is equivalent to capacitance.It is above-mentioned etc.
It imitates electronic device and constitutes LC resonance network, a tunable transmission zero is provided in the lower passband of filter.
For the ease of analysis, metallic plate and metal throuth hole are assumed to perfact conductor by us, ignore its parasitic inductance and electricity
The influence of resistance, this makes it possible to obtain the equivalent-circuit models 607 of the resonant network.Wherein, top-level metallic plate 601 and intermediate metal film
Capacity plate antenna C is equivalent between 605ft, capacity plate antenna C is equivalent between intermediate metal film 605 and underlying metal plate 603fb, top
The capacitive line of rabbet joint 606 on layer metallic plate 601 is equivalent to capacitance Cs, metal throuth hole 604 is equivalent to inductance Lpost.The resonant network
Total equivalent capacity CeffIt can be indicated by following formula：
From the above equation, we can see that the introducing of intermediate metal film 605 increases total equivalent capacity Ceff, the first resonance list can be reduced
The frequency for the zero that member 600 introduces, therefore can realize the introducing and tuning of passband zero under filter.Total equivalent capacity Ceff's
Capacitance is with equivalent capacity CsWith equivalent capacity CftIncrease and increase, with equivalent capacity CfbIncrease and reduce.By Fig. 3, Fig. 4
It is shown, equivalent capacity CsValue and the capacitive line of rabbet joint 606 width ws1It is related, equivalent capacity CftWith equivalent capacity CfbValue difference
With the width w of intermediate metal film 605p, top dielectric layer 201 thickness hc, underlying dielectric layers 203 and bonding sheet 202 thickness it
And hpIt is related.
Position to lower pass band transfer zero and ws、wpWith hpRelationship carry out simulation analysis, simulation result such as Fig. 5, Fig. 6
Shown in Fig. 7.Wherein, Fig. 5 shows the width w of the different capacitive line of rabbet joint 606sWhen S21Simulation parameter curve.When line of rabbet joint width
wsIncrease to 0.8mm, corresponding equivalent capacity C from 0.2mmsReduce, causes total capacitance CeffReduce therewith, passband zero under filter
The frequency of point is reduced to 4.6GHz from 5.5GHz accordingly.Similarly, as shown in Figures 6 and 7, the frequency of zero is with intermediate gold
Belong to the width w of piece 605pIncrease and reduce, with the sum of the thickness of underlying dielectric layers 203 and bonding sheet 202 hpIncrease and subtract
Small, the thickness h of middle dielectric layer is constant.It is worth noting that, as seen from the figure, the position of passband zero is not by filter
The parameter of one resonant element 600 influences, therefore can individually be adjusted to the position of lower passband zero.
Fig. 8 is the schematic three dimensional views and its equivalent-circuit model of two layers of resonant element of filter shown in Fig. 1.As schemed
Show, the second resonant element 700 is including top-level metallic plate 701, underlying metal plate 703 and positioned at top-level metallic plate 701, underlying metal
Middle dielectric layer 702 between plate 703.Metal throuth hole 704 is embedded in middle dielectric layer 702.Wherein the capacitive line of rabbet joint 706 is built
On top-level metallic plate 701.
The capacitive line of rabbet joint 706 is equivalent to capacitance.Top-level metallic plate 701 is equivalent to capacity plate antenna with underlying metal plate 703.Metal
Through-hole 704 is equivalent to inductance.Above-mentioned equivalent electrons device constitutes LC resonance network.
See the equivalent-circuit model 707 of second resonant network 700.Wherein, the capacitive line of rabbet joint 706 constitutes equivalent capacity Cs。
Equivalent capacity C is constituted between top-level metallic plate 701 and underlying metal plate 703bt, the composition equivalent inductance of metal throuth hole 704 Lpost。
Parameter by adjusting resonant element 700 can introduce an additional zero in the upper passband of filter.Equivalent electricity
Hold CsValue by the capacitive line of rabbet joint 706 width ws2It determines, equivalent capacity CbtValue determined by the thickness h of dielectric layer 702.Work as centre
When 702 thickness h of dielectric layer is constant, equivalent capacity CsValue with the capacitive line of rabbet joint 706 width wsIncrease and reduce, cause total
Equivalent capacity reduce, the frequency of upper passband zero increases therewith.
Fig. 9 show when the thickness h of middle dielectric layer 702 be constant when, the width w of the different capacitive line of rabbet joint 706sWhen S21
Simulation parameter curve.As the width w of the capacitive line of rabbet joint 706sIncrease to 0.8mm from 0.2mm, the frequency of upper passband zero from
10.9GHz increasing to 12.2GHz.It is worth noting that, the position of lower passband zero is still barely affected, therefore also can be right
The dead-center position of upper passband is individually adjusted.
Multiple filter couplings of the present invention, can form multi-stage filter.
Figure 10 is the schematic three dimensional views for another second order ultra-wide band filter that present invention design is realized.It is shown in Figure 10
It is a threedimensional model schematic diagram with double zeros, the second order SIW-CPW ultra-wide band filters of Wide stop bands, by two Fig. 1 institutes
The resonator shown is coupled to form, and primary structure includes top-level metallic plate 1001, middle dielectric layer 1002, underlying metal plate 1003,
Metal throuth hole 1004 and two intermediate metal films 1005.
As shown in Figure 10, specifically, metal throuth hole 1004 is arranged in the middle dielectric layer 1002 weeks of entire second order filter
It encloses.The position of the other structures such as intermediate metal film 1005 is similar with single filter structure.The input port of one filter
As the input port of second order filter, the output port of a filter is connect with the input port of another filter, separately
Output port of the output port of one filter as second order filter.
Similarly, multi-stage filter can also be coupled as.
For Figure 10 after actual processing, the actual size of filter is 12.00 × 17.00 × 0.52mm3, design in Rogers
On RO4350 substrates, the dielectric constant of RO4350 substrates is 3.66, and the thickness of loss tangent 0.04, top dielectric layer is
The thickness of 0.10mm, underlying dielectric layers are 0.42mm.Using the special bonding sheet RO4450F of ROGERS CORPORATION by top dielectric layer and
Underlying dielectric layers are bonded together, which is 0.09mm.
Figure 11 show emulation and test S parameter compares figure according to the filter of Figure 10 actual fabrications.Void in Figure 11
Line is the simulation result of the filter, which is 6.4GHz to 11.2GHz, and the insertion loss in passband is less than
0.7dB, return loss is more than 14dB, and the noise suppressed in the frequency range of 12.5-19.5GHz reaches 20dB.However,
As shown in the bold portion in Figure 11, test has small frequency displacement than simulation result, and return loss is distinguished with insertion loss
10dB and 1.5dB are reached.The shadow of the error and high-frequency noise of mainly three layers PCB manufacturing process of the reason of causing the above error
It rings.Inhibit with preferable out-of-band noise nevertheless, the design still embodies preferable passband steepness.
What has been described above is only a preferred embodiment of the present invention, and present invention is not limited to the above embodiments.It is appreciated that this
The other improvements and change that field technology personnel directly export or associate without departing from the spirit and concept in the present invention
Change, is considered as being included within protection scope of the present invention.
Claims (8)
1. a kind of SIW-CPW ultra-wide band filters with double zero Wide stop bands, it is characterised in that：Including at least two resonance lists
Member；Resonant element includes SIW structures and CPW structures；The SIW structures include top-level metallic plate, bottom metal and are located at
Middle dielectric layer between the top-level metallic plate and the bottom metal；Metal throuth hole is also embedded in middle dielectric layer；
The upper and lower ends of metal throuth hole are connected with top-level metallic plate, bottom metal respectively；The CPW structure settings are in the top layer
On metallic plate.
2. the SIW-CPW ultra-wide band filters with double zero Wide stop bands as described in claim 1, it is characterised in that：It is described
Intermediate metal film is also embedded in middle dielectric layer.
3. the SIW-CPW ultra-wide band filters with double zero Wide stop bands as claimed in claim 2, it is characterised in that：It is intermediate
Dielectric layer includes top dielectric layer, underlying dielectric layers and bonds the bonding sheet between top dielectric layer and underlying dielectric layers；It is intermediate
Sheet metal is embedded among bonding sheet；Intermediate metal film is between bonding sheet and top dielectric layer.
4. the SIW-CPW ultra-wide band filters with double zero Wide stop bands as claimed in claim 2, it is characterised in that：First
Resonant element is three layers of resonant element；Second resonant element is two layers of resonant element；In the middle dielectric layer of first resonant element
Embedded with intermediate metal film.
5. the SIW-CPW ultra-wide band filters with double zero Wide stop bands as described in claim 1, it is characterised in that：It is described
CPW structures are periodic.
6. the SIW-CPW ultra-wide band filters with double zero Wide stop bands as described in claim 1, it is characterised in that：It is described
Top-level metallic plate includes input port and output port, the pattern symmetrical of input port and output port.
7. the SIW-CPW ultra-wide band filters with double zero Wide stop bands as described in claim 1, it is characterised in that：Institute
State on top-level metallic plate further includes the capacitive line of rabbet joint；The capacitive line of rabbet joint of two resonant elements is of different size.
8. as claim 1~7 any one of them has the SIW-CPW ultra-wide band filters of double zero Wide stop bands, feature
It is：N number of filter is coupled as N rank filters；Input terminal of the input port of first filter as multi-stage filter
Mouthful；The output port of (n-1)th filter is connect with the input port of the n-th filter, 2≤n≤N, the output port of N filter
Output port as N rank filters.
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| CN109524776A (en) * | 2018-10-17 | 2019-03-26 | 天津大学 | A kind of Wideband high-gain on piece substrate integration wave-guide antenna |
| CN109755706A (en) * | 2019-02-28 | 2019-05-14 | 江南大学 | The electromagnetism branch coupling filter of high out-of-side rejection |
| CN110931927A (en) * | 2019-12-30 | 2020-03-27 | 广东大普通信技术有限公司 | Double-stop-band filter and manufacturing method thereof |
| CN111342178A (en) * | 2020-03-17 | 2020-06-26 | 电子科技大学 | Dielectric integrated defected ground structure device, filter and communication system |
| WO2020155670A1 (en) * | 2019-01-30 | 2020-08-06 | 广东大普通信技术有限公司 | Filter and manufacturing method therefor |
| CN111855211A (en) * | 2020-07-31 | 2020-10-30 | 北京航空航天大学 | Optimal demodulation frequency band determination method for fault feature enhancement |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524776A (en) * | 2018-10-17 | 2019-03-26 | 天津大学 | A kind of Wideband high-gain on piece substrate integration wave-guide antenna |
| WO2020155670A1 (en) * | 2019-01-30 | 2020-08-06 | 广东大普通信技术有限公司 | Filter and manufacturing method therefor |
| CN109755706A (en) * | 2019-02-28 | 2019-05-14 | 江南大学 | The electromagnetism branch coupling filter of high out-of-side rejection |
| CN110931927A (en) * | 2019-12-30 | 2020-03-27 | 广东大普通信技术有限公司 | Double-stop-band filter and manufacturing method thereof |
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| CN111342178A (en) * | 2020-03-17 | 2020-06-26 | 电子科技大学 | Dielectric integrated defected ground structure device, filter and communication system |
| CN111342178B (en) * | 2020-03-17 | 2021-11-30 | 电子科技大学 | Dielectric integrated defected ground structure device, filter and communication system |
| CN111855211A (en) * | 2020-07-31 | 2020-10-30 | 北京航空航天大学 | Optimal demodulation frequency band determination method for fault feature enhancement |
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| CN108598632B (en) | 2019-10-25 |
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