CN108573990A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing method Download PDFInfo
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- CN108573990A CN108573990A CN201810458666.XA CN201810458666A CN108573990A CN 108573990 A CN108573990 A CN 108573990A CN 201810458666 A CN201810458666 A CN 201810458666A CN 108573990 A CN108573990 A CN 108573990A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This disclosure relates to a kind of semiconductor device and its application method and manufacturing method.The semiconductor device includes：Substrate；At least one photoelectric conversion unit is formed in the substrate, which can absorb visible light to generate electronics and can keep electronics；Infrared sensing layer, is formed in substrate, which is located at least one photoelectric conversion unit, and can absorb infra-red radiation to generate electronics；And electrode, the electrode are formed on infrared sensing layer.
Description
Technical field
This disclosure relates to semiconductor applications, it particularly relates to semiconductor device and its application method and manufacturing method.
Background technology
Imaging sensor can be used for sensing radiation, to generate corresponding electric signal (imaging).It wherein, can be by
The radiation of sensing includes but not limited to visible light, infra-red radiation, ultraviolet radioactive etc..Particularly, the sensing of infra-red radiation is being pacified
It protects, be with a wide range of applications in medicine, automobile or other imaging fields.
Currently, the sensing of infra-red radiation and visible light is carried out respectively in different types of imaging sensor,
It is realized in identical image sensor challenging to the sensing of infra-red radiation and visible light.
Invention content
One purpose of the disclosure is to provide a kind of novel semiconductor device and its application method and manufacturing method, especially
Ground is related to compatibly sensing infra-red radiation and visible light in the image sensor.
According to the disclosure in a first aspect, providing a kind of semiconductor device, which includes：Substrate；At least
One photoelectric conversion unit is formed in the substrate, which can absorb visible light to generate electronics and energy
Enough keep electronics；Infrared sensing layer, is formed in substrate, the infrared sensing layer be located at least one photoelectric conversion unit it
On, and infra-red radiation can be absorbed to generate electronics；And electrode, the electrode are formed on infrared sensing layer.
According to the second aspect of the disclosure, a kind of use is provided according to the semiconductor device of the first aspect of the disclosure
Method, this method include：The stage is read first, reads the electronics generated in photoelectric conversion unit；The stage is read second,
By applying bias voltage to electrode, the electronics generated in infrared sensing layer is read.
According to the third aspect of the disclosure, a kind of method of manufacture semiconductor device is provided, this method includes：Lining is provided
Bottom；At least one photoelectric conversion unit is formed in the substrate, which can absorb visible light to generate electronics
And electronics can be kept；Infrared sensing layer is formed in substrate, which is located at least one opto-electronic conversion list
On member, and infra-red radiation can be absorbed to generate electronics；And form electrode on infrared sensing layer.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description with reference to attached drawing, wherein：
Fig. 1 is the schematic sectional view according to the semiconductor device of an embodiment of the present disclosure.
Fig. 2A and Fig. 2 B be illustrate respectively according to the semiconductor device of an embodiment of the present disclosure electrode wherein not by
Schematic energy band diagram in the case of applying bias voltage and being applied in bias voltage.
Fig. 3 A- Fig. 3 C are the schematic cross-sectionals for the operation principle for showing the semiconductor device according to an embodiment of the present disclosure
Figure.
Fig. 4 is the flow chart for the manufacturing method for showing the semiconductor device according to an embodiment of the present disclosure.
Fig. 5 A to Fig. 5 I are the schematic cross-sectionals for showing the corresponding semiconductor device of the part steps of method as shown in fig. 4
Figure.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, the position of each structure, size and range etc. shown in attached drawing etc. do not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific implementation mode
Present inventors appreciate that traditional imaging sensor can not take into account the sense to infra-red radiation and visible light
It surveys, function is relatively single, using being limited to.For example, being expected that by infra-red radiation and visible light combination/mutual cooperation
In the case of completing sensing, it is necessary to while two distinct types of imaging sensor is applied, this undoubtedly increases answering for system
Miscellaneous degree and unstability.
Therefore, compatibly realize the sensing to infra-red radiation and visible light for carrying in identical imaging sensor
The practicability and application prospect important in inhibiting of hi-vision sensor.
Present inventor proposes a kind of semiconductor device and its application method and manufacturing method.The semiconductor device
(for example, imaging sensor) include not only for absorbing visible light and converting thereof into the photoelectric conversion unit of electronics, herein in connection with
For absorbing infra-red radiation and converting thereof into the infrared sensing layer of electronics.Wherein, which is formed at least
On one photoelectric conversion unit, and transparent electrode is set on the infrared sensing layer.It, can using the above arrangement
By applying bias voltage to the electrode to generate electrostatic potential in infrared sensing layer.Under the action of electrostatic potential, infrared sense
Surveying in layer the electronics that generates can be in tunnel to photoelectric conversion unit, to the quilt as the electronics generated in photoelectric conversion unit
It reads.
Hence it is advantageous to by controlling bias voltage, identical signal can be utilized in the gap for reading visible light signal
Reading circuit realizes the reading to infrared radiation signal.That is, the application can take into account to the sensing of visible light and to infrared spoke
The sensing penetrated.The application limitation of semiconductor device can be improved under the premise of simplifying structure using the technology of the disclosure.
In addition, those skilled in the art can understand, although example described herein is at imaging sensor
Reason, but the present invention is readily applicable to other semiconductor devices sensed to radiation.
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition having
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Fig. 1 schematically illustrates the schematic sectional view of the semiconductor device 100 according to an embodiment of the present disclosure.
As shown in Figure 1, semiconductor device 100 includes substrate 102.
Semiconductor device 100 further includes being formed at least one of substrate 102 photoelectric conversion unit 104.Wherein, photoelectricity
Converting unit 104 can absorb visible light to generate electronics and can keep electronics.
As shown in Figure 1, semiconductor device 100 further includes the infrared sensing layer 108 being formed on substrate 102.Infrared sense
It surveys layer 108 to be located at least one photoelectric conversion unit 104, and infra-red radiation can be absorbed to generate electronics.
In addition, as shown in Figure 1, semiconductor device 100 further includes electrode 110, electrode 110 is formed in infrared sensing layer 108
On.
In some embodiments, it is (all to can include but is not limited to unitary semi-conducting material for the example of the material of substrate 102
Such as, silicon or germanium etc.), compound semiconductor materials (such as silicon carbide, SiGe, GaAs, gallium phosphide, indium phosphide, indium arsenide and/
Or indium antimonide) or combinations thereof.In other embodiments, substrate may be silicon-on-insulator (SOI), silicon germanium on insulator
Etc. various compound substrates.It will be understood by those of skill in the art that substrate 102 is not particularly limited, but can root
It is selected according to practical application.
In embodiments herein, as shown in Figure 1, at least one photoelectric conversion unit 104 is formed in substrate 102.
On the one hand, in some embodiments, photoelectric conversion unit 104 may include being served as a contrast by N-shaped and/or p-type dopant
The doped region formed in bottom 102.For example, photoelectric conversion unit 104 includes N-shaped doped region.Utilize the doped region, photoelectricity
Converting unit 104 can carry out opto-electronic conversion and generate charge (particularly, electronics).
On the other hand, in some embodiments, photoelectric conversion unit 104 can keep electronics.Wherein, photoelectric conversion unit
The electronics kept in 104 can be read.
In some embodiments of the present application, semiconductor device 100 may include signal read circuits (not shown).Signal
Reading circuit can be used to read the electronics kept in photoelectric conversion unit 104.Knowledge about signal read circuits is this
The prior art in field, is not detailed herein.
In some embodiments, signal read circuits are formed near the photoelectric conversion unit 104 in substrate 102, with
It is convenient for read operation.
In some embodiments, each photoelectric conversion unit 104 is configured to have individual signal read circuits.That is,
Photoelectric conversion unit 104 is corresponded with signal read circuits.Under this arrangement, each signal read circuits are only read
The electronics kept in single photoelectric conversion unit 104.It will be appreciated, however, by one skilled in the art that signal read circuits
Arrangement be not limited to above example.For example, in some embodiments, each signal read circuits can turn with multiple photoelectricity
Change the correspondence of unit 104.Under this arrangement, each signal read circuits are read in multiple photoelectricity in which can be time-multiplexed
The electronics kept in converting unit 104.
Although not illustrating, on substrate 102/in can also be already formed with other components or layer, for example, contact hole, under
Other components and/or interlevel dielectric layer that layer metal connecting line and through-hole etc. are formed in earlier processing step etc..
For example, in some embodiments, photosensitive isolation structure can also be arranged between adjacent photoelectric conversion unit 104
(not illustrating).
When semiconductor device 100 is back side illumination image sensor, photoelectric conversion unit 104 can be formed to close on lining
The back side at bottom 102.Correspondingly, infrared sensing layer 108 is located on the back side of substrate 102.
In embodiments herein, infrared sensing layer 108 can be used in feeling the intensity of incident infra-red radiation
It surveys.
For example, in some embodiments, in 108 pairs of infrared wavelength range of infrared sensing layer (for example, 760nm to 1mm)
It is radiosensitive.Therefore, when by the wavelength with infrared band radiation exposure when, infrared sensing layer 108 can absorb the radiation
And generate charge (particularly, electronics).
In some embodiments, infrared sensing layer 108 mainly absorbs the radiation of infrared band.That is, 108 pairs of infrared sensing layer
It is transparent for 104 visible light to be detected of photoelectric conversion unit.Therefore, the visible light to be sensed is transmissive to lead to
Cross infrared sensing layer 108.Here, " be transmissive to " refer to transmission loss it is smaller even without loss.
In some embodiments, infrared sensing layer 108 can be formed by the organic film that can absorb infra-red radiation.
In some embodiments, the infrared sensing layer 108 on substrate 102 is formed in be arranged in a top view at least
It is partly Chong Die at least one photoelectric conversion unit 104.For example, as shown in Figure 1, infrared sensing layer 108 is more with illustrated by
A photoelectric conversion unit 104 is overlapped.It will be appreciated, however, by one skilled in the art that infrared sensing layer 108 turns relative to photoelectricity
The arrangement for changing unit 104 is not limited to above example.
As shown in Figure 1, electrode 110 is formed on infrared sensing layer 108.
In some embodiments, the electrode 110 being formed on photoelectric conversion unit 104 and infrared sensing layer 108 is right
It is transparent for the visible light and infra-red radiation to be sensed.That is, the visible light and infra-red radiation to be sensed can
It is transmitted through electrode 110.According to the above arrangement, the visible light and infra-red radiation being irradiated on electrode 110 can respectively by positioned at
110 infrared sensing layer 108 below of electrode and photoelectric conversion unit 104 absorb.
For example, in some embodiments, electrode 110 is for infra-red radiation and all visible lights (entire visible light frequency band)
For be transparent.
Alternatively, in some embodiments, being formed on some photoelectric conversion unit 104 and infrared sensing layer 108
Electrode 110 is transparent for infra-red radiation and the visible light to be sensed of photoelectric conversion unit 104.
It will be appreciated, however, by one skilled in the art that the selection of the transmissison characteristic of electrode 110 is not limited to above example.
As shown in Figure 1, in some embodiments of the present application, semiconductor device 100 can also include barrier layer 112.Its
In, barrier layer 112 can be formed between substrate 102 and infrared sensing layer 108.
In some embodiments, barrier layer 112 can be made of insulating materials.For example, in some embodiments, working as substrate
102 by silicon materials when being formed, and barrier layer 112 can be the thin layer of silica.Barrier layer 112 can be used as from infrared sensing layer
108 arrive the potential barrier of substrate 102.
In addition, in some embodiments, semiconductor device 100 can also include by electrode 110 be clipped in the middle first absolutely
Edge layer 114 and second insulating layer 116.Specifically, the first insulating layer 114 is formed between infrared sensing layer 108 and electrode 110,
And second insulating layer 116 is formed on electrode 110.In embodiments herein, the first insulating layer 114 and second insulating layer
116 can be used for electrode 110 and surrounding being electrically isolated.
According to arrangement above, when by applying bias voltage to electrode 110 to generate electrostatic in infrared sensing layer 108
When gesture, the electronics generated in infrared sensing layer 108 can be tunneling to photoelectric conversion unit 104.
Therefore, semiconductor device 100 according to an embodiment of the present disclosure can be realized by applying bias voltage to red
The reading of electronics is generated in external sensed layer 108.The process is described in detail below with reference to Fig. 2A-Fig. 2 B and Fig. 3 A- Fig. 3 C.
Fig. 2A and Fig. 2 B are to illustrate to be not applied to biasing according to the electrode of the semiconductor device of an embodiment of the present disclosure wherein respectively
Voltage and it is applied in the schematic energy band diagram in the case of bias voltage.
Fig. 2A instantiate in the case where not applying bias voltage to electrode according to the half of an embodiment of the present disclosure
The schematic energy band diagram of conductor device.That is, Fig. 2A shows the energy band diagram applied to electrode 110 before bias voltage.Wherein, it partly leads
The structure of body device is simplified expression.As shown in Figure 2 A, in the case of no bias voltage, the energy band diagram of semiconductor device is main
It is related to the dielectric properties of constituent material.For example, in some embodiments, barrier layer (includes but not limited to two by insulating materials
Silica) it is formed, then potential barrier is formed between infrared sensing layer and substrate.Therefore, as shown in Figure 2 A, in infrared sensing layer
The electronics of generation will not be to substrate transfer.
Fig. 2 B instantiate the semiconductor according to an embodiment of the present disclosure in the case where applying bias voltage to electrode
The energy band diagram of device.Wherein, the structure of semiconductor device is simplified expression.As shown in Figure 2 B, apply the enabled band hair of bias voltage
Raw bending.Specifically, it when applying the bias voltage relative to substrate to electrode, generates between electrode and substrate and substantially hangs down
Straight electric field so that electrostatic potential wherein everywhere is different, and correspondingly, electron energy everywhere is different, i.e., energy band bends.Cause
This, as shown in Figure 2 B, the electronics generated in infrared sensing layer can be tunneling in photoelectric conversion unit, and then by signal-obtaining electricity
It reads on road.
Advantageously, according to above-mentioned mechanism, embodiments herein can be realized by applying bias voltage to infrared sense
It surveys in layer 108 and generates the reading of electronics.Particularly advantageously, the reading of the electronics to being generated in infrared sensing layer 108 is controllable.
Therefore, embodiments herein can by the reading of electronics that is generated in infrared sensing layer 108 with to photoelectric conversion unit 104
The reading of the electronics of middle generation distinguishes in time.Furthermore it is noted that the electricity generated in infrared sensing layer 108
The reading and the reading of the electronics to being generated in photoelectric conversion unit 104 of son can be carried out by identical signal read circuits,
Thereby simplify reading device.
Fig. 3 A- Fig. 3 C are the schematic cross-sectionals for the operation principle for showing the semiconductor device according to an embodiment of the present disclosure
Figure.
In conjunction in Fig. 1 to the description of the schematic sectional view of semiconductor device 100 it is found that according to an embodiment of the present application
Semiconductor device 100 is simultaneously including both photoelectric conversion unit 104 and infrared sensing layer 108.Wherein, photoelectric conversion unit
104 and infrared sensing layer 108 can electronics be generated according to incident visible light and infra-red radiation respectively.In addition, combining figure
To the description of energy band it is found that photoelectric conversion unit can not only be read using according to the semiconductor device of the application in 2A- Fig. 2 B
The electronics of middle generation can also realize the independent reading of the electronics to being generated in infrared sensing layer.
Therefore, in embodiments herein, using semiconductor device 100 come execute sensing may include two reading ranks
Section.Wherein, the stage is read first, reads the electronics generated in photoelectric conversion unit 104, and the stage is read second, led to
It crosses and the electronics that bias voltage reading generates in infrared sensing layer 108 is applied to electrode 110.
Preferably, before starting any reading stage, it would be held in the electronics emptying in photoelectric conversion unit 104.
Fig. 3 A schematically illustrate the charge in the first reading stage according to the semiconductor device 100 of an embodiment of the present disclosure
(particularly, electronics) distribution situation.The stage is read first, bias voltage will not be applied to electrode 110, as a result, infrared sensing
The electronics generated in layer 108 can not cross over barrier layer 112.As shown in fig. 3, in the first reading stage, only opto-electronic conversion
The electronics generated in unit 104 can be held therein.Therefore, the stage is read first, according to an embodiment of the present disclosure
Semiconductor device 100 read be the electronics generated in photoelectric conversion unit 104.
Fig. 3 B schematically illustrate the semiconductor device 100 according to an embodiment of the present disclosure after terminating the first stage
And start the distribution of charges situation before the second reading stage.As shown in Figure 3B, before the second reading stage started, opto-electronic conversion
The electronics kept in unit 104 is discharged by all electric discharges.
Fig. 3 C schematically illustrate the semiconductor device 100 according to an embodiment of the present disclosure in the second reading stage
Distribution of charges situation.The stage is read second, bias voltage is applied to be generated in infrared sensing layer 108 to electrode 110
Electrostatic potential, the electronics tunnel thus generated in infrared sensing layer 108 reach photoelectric conversion unit 104 by barrier layer 112
In.Significantly, since having completed electric discharge (as shown in Figure 3B), only infrared sensing before starting for the second reading stage
The electronics generated in layer 108 can be maintained in photoelectric conversion unit 104, as shown in FIG. 3 C.Therefore, rank is read second
Section, what is only read according to the semiconductor device 100 of an embodiment of the present disclosure is the electronics generated in infrared sensing layer 108.
Wherein, in some embodiments, photoelectric conversion unit 104 is deactivated in the second reading stage, to avoid second
The reading stage continues to generate electronics and be interfered to reading the electronics generated in infrared sensing layer 108.Alternatively, in some implementations
In example, the electronics generated in photoelectric conversion unit 104 needs to be sent to specific region to be kept, and reads the stage second
Stop the transmission.Alternatively, in some embodiments, deactivating photoelectric conversion unit 104 in the second reading stage and stopping above-mentioned biography
It send.
Advantageously, embodiments herein can carry out in the first reading stage and the second reading stage to photoelectricity respectively
The electronics generated in converting unit 104 and the reading to the electronics generated in infrared sensing layer 108.That is, two kinds of signals will not be sent out
Raw aliasing.
In addition, sharing signal read circuits in the first reading stage and the second reading stage.That is, to photoelectric conversion unit
The reading of the electronics that is generated in 104 and the electronics generated in infrared sensing layer 108 can by identical signal read circuits into
Row, thereby simplifies reading device.
It is worth noting that, what the above-mentioned definition about the first reading stage and the second reading stage was merely an illustrative,
It is not offered as any rank or sequence.In practical operation, the two signal-obtaining ranks can be repeated in any order
The signal-obtaining of section.For example, in some embodiments, the second reading rank is entered after completing the reading that first reads the stage
Section then enters first after completing the reading that second reads the stage and reads the stage, then constantly alternately goes down.
Optionally, in some embodiments, semiconductor device 100 further includes being located at substrate 102 and infrared sensing layer 108
Between fixed charge layer 106.Particularly, in the embodiment shown in fig. 1, fixed charge layer 106 is formed in barrier layer 112
On.In various embodiments, fixed charge layer 106 can be used for accumulated charge.The charge accumulated is typically negative electrical charge, but
Can also be positive charge in some cases.When fixed charge layer 106 has negative (just) charge of accumulation, these charges are by substrate
Positive (negative) charge attraction in 102 back sides is formed about electric dipole to interface, so as to improve dark current.
For example, in some embodiments, fixed charge layer 106 can be by one kind in hafnium oxide, aluminium oxide or tantalum oxide
Or a variety of formation.
Optionally, in some embodiments, semiconductor device 100 further includes shape corresponding with each photoelectric conversion unit 104
At color-filter element 124.As shown in Figure 1, color-filter element 124 is formed on substrate 102 (particularly, second insulating layer 116).
In some embodiments, color-filter element 124 is corresponding with photoelectric conversion unit 104.Here, " correspondence " refers to color-filter element 124 and light
Electric converting unit 104 is arranged to be overlapped at least partly in a top view.For example, as shown in Figure 1, color-filter element 124 and light
Electric converting unit 104 is aligned.It will be appreciated, however, by one skilled in the art that color-filter element 124 is relative to photoelectric conversion unit
104 arrangement is not limited to above example.
Usually, color-filter element 124 only allows the light of specific wavelength to pass through.In conjunction with described above, electrode 110 is in each filter
Part in 124 vertical direction of color component infra-red radiation and the color-filter element can be allowed by color (for example, green
Color, red or blue) for be transparent.
Optionally, as shown in Figure 1, semiconductor device 100 further include between being formed in two neighboring color-filter element 124 every
From structure 122, for preventing light radiation crosstalk between color-filter element 124.
Optionally, in some embodiments, semiconductor device 100 can also include lenticule 126.
In some embodiments, as shown in Figure 1, lenticule 126 can be correspondingly formed on color-filter element 124.It is micro-
Mirror 126 can be used for incident light radiation being gathered in each photoelectric conversion unit 104.
Fig. 4 is the flow chart for the manufacturing method for showing the semiconductor device according to an embodiment of the present disclosure.
As shown in figure 4, being mainly included the following steps that according to the manufacturing method of the semiconductor device of an embodiment of the present disclosure：
In step 402, substrate is provided；
In step 404, at least one photoelectric conversion unit is formed in the substrate, and photoelectric conversion unit can absorb visible light
To generate electronics and electronics can be kept；
In step 406, infrared sensing layer is formed in substrate, which is located at least one opto-electronic conversion list
On member, and infra-red radiation can be absorbed to generate electronics；And
In step 408, electrode is formed on infrared sensing layer.
In addition, Fig. 5 A to 5I are show the corresponding semiconductor device of the part steps of method as shown in fig. 4 schematic
Sectional view.It is illustrated below in conjunction with Fig. 4, Fig. 5 A to 5I.It is retouched above in conjunction with Fig. 1, Fig. 2A-Fig. 2 B and Fig. 3 A- Fig. 3 C
The content stated is readily applicable to corresponding feature.
In step 402, substrate 102 is provided.
In step 404, as shown in Figure 5A, at least one photoelectric conversion unit 104 is formed in substrate 102.Wherein, light
Electric converting unit 104 can absorb visible light to generate electronics and can keep electronics.
In some embodiments, the doped region that photoelectric conversion unit 104 includes can by such as spread and/or from
The mode of son injection dopant is formed.However, it should be readily apparent to one skilled in the art that the invention is not limited thereto.
In some embodiments, photoelectric conversion unit 104 is formed as closing on the back side of substrate 102.That is, the semiconductor fills
It is back side illumination image sensor to set 100.Correspondingly, infrared sensing layer is located on the back side of substrate 102.
The method further includes forming signal read circuits (not shown), and photoelectric conversion unit is maintained at for reading
Electronics in 104.
Optionally, in some embodiments, can photosensitive isolation structure be set between adjacent photoelectric conversion unit 104
(not illustrating).
In some embodiments, as shown in Figure 5 B, barrier layer 112 is formed on substrate 102.
In some embodiments, barrier layer 112 can be formed by thin insulating materials.Typically, in some embodiments,
The example of barrier layer 112 can include but is not limited to the thin layer of the silica of several nanometer thickness.
In some embodiments, barrier layer 112 can be formed by deposition processes.For example, can be by using gas ions
Enhance atomic layer deposition or any other suitable processing to form barrier layer 112.
It will be appreciated by those skilled in the art that barrier layer 112 can also by any other suitable material by it is any its
He forms suitable mode.
As shown in Figure 5 C, optionally, in some embodiments, fixed charge layer 106 is formed on substrate 102.Especially
Ground, in some embodiments, fixed charge layer 106 are formed on barrier layer 112.
As described above, fixed charge layer 106 can be used for accumulated charge, so as to improve dark current.
In some embodiments, fixed charge layer 106 can be formed by technique for atomic layer deposition.
In general, the example of the material of fixed charge layer 106 can include but is not limited to：Hafnium oxide, aluminium oxide or oxygen
Change tantalum.
As shown in Figure 5 D, in a step 406, infrared sensing layer 108 is formed on substrate 102.Particularly, in some realities
It applies in example, infrared sensing layer 108 is formed on fixed charge layer 106.
In some embodiments, infrared sensing layer 108 is formed by be located at least one photoelectric conversion unit 104.
That is, infrared sensing layer 108 be arranged to it is Chong Die at least one photoelectric conversion unit 104 at least partly in a top view.
In some embodiments, infrared sensing layer 108 is formed by organic film.
Typically, in some embodiments, the example of the material of infrared sensing layer 108 can include but is not limited to it is following in
It is one or more：Material containing naphthalene Tin Phthalocyanine, the material containing TiOPc (TiOPc), containing PbSe, PbS and/or
The material of InAs quantum dots.
As shown in fig. 5e, in some embodiments, the first insulating layer 114 is formed on infrared sensing layer 108.
In some embodiments, the first insulating layer 114 can be insulating material film.Typically, in some embodiments,
The example of first insulating layer 114 can include but is not limited to the silica membrane of several nanometer thickness.
In some embodiments, the first insulating layer 114 can be formed by deposition processes.
It will be appreciated by those skilled in the art that the first insulating layer 114 can also be by any other suitable material by appointing
What his suitable mode is formed.
As illustrated in figure 5f, in a step 408, electrode 110 is formed on infrared sensing layer 108.Particularly, in some realities
It applies in example, electrode 110 is formed on the first insulating layer 114.
In embodiments herein, electrode 110 is transparent for visible light to be detected and infra-red radiation
's.
For example, in some embodiments, electrode 110 is for infra-red radiation and all visible lights (entire visible light frequency band)
For be transparent.
Alternatively, in some embodiments, being formed on some photoelectric conversion unit 104 and infrared sensing layer 108
Electrode 110 is transparent for infra-red radiation and the visible light to be sensed of photoelectric conversion unit 104.Typically,
In some embodiments, the example of the material of transparent electrode 110 can include but is not limited to one of the following or a variety of：It mixes
The zinc oxide (AZO) or graphene that tin indium oxide (ITO), aluminium adulterate.
In some embodiments, the method example for preparing electrode 110 can include but is not limited to one of the following or more
Kind：Evaporation, sputtering (reactive magnetron sputtering method), reactive ion plating, chemical vapor deposition or spray pyrolysis etc..
It will be appreciated by those skilled in the art that electrode 110 can also pass through any other by any other suitable material
Suitable mode is formed.
As depicted in fig. 5g, in some embodiments, second insulating layer 116 is formed on electrode 110.First insulation as a result,
Layer 114 and second insulating layer 116 by electrode 110 in centre.It will be appreciated by those skilled in the art that second insulating layer 116 can be with
It is formed by any other suitable mode by any other suitable material.
According to arrangement above, when by applying bias voltage to electrode 110 to generate electrostatic in infrared sensing layer 108
When gesture, the electronics generated in infrared sensing layer 108 can be tunneling in photoelectric conversion unit 104.
Optionally, as illustrated in fig. 5h, in some embodiments, formed and each photoelectric conversion unit on substrate 102
104 corresponding color-filter elements 124.Particularly, in some embodiments, color-filter element 124 is formed on second insulating layer 116
On.Here, " correspondence " refer to color-filter element 124 be arranged to photoelectric conversion unit 104 it is be overlapped at least partly in a top view.
Usually, color-filter element 124 only allows the light of specific wavelength to pass through.Therefore, electrode 110 is in each color-filter element
Part in 124 vertical direction can for infra-red radiation and the color-filter element allow by color for be transparent.
The example of the material of color-filter element 124 can include but is not limited to：The polymer of dyestuff base, resin or its with color pigment
His organic host materials.
It will be appreciated by those skilled in the art that color-filter element 124 can be formed by any suitable means.
Optionally, in addition, isolation structure 122 is formed between two neighboring color-filter element 124, for preventing light radiation from existing
Crosstalk between color-filter element 124.
Optionally, as shown in fig. 5i, in some embodiments, optionally, accordingly formed on color-filter element 226 micro-
Mirror 126.It will be understood by those of skill in the art that lenticule 126 can by any suitable material, pass through any suitable work
Skill is formed.In addition, lenticule 228 can determine shapes and sizes according to parameters such as the refractive index of forming material.
It is worth noting that, being merely illustrative making the boundary between each step of semiconductor device above.
In practical operation, in any combination, or even single step can be synthesized between each step.In addition, the execution of each step is suitable
Sequence is not limited by description order, and part steps can be omitted.
According to one aspect of the disclosure, a kind of semiconductor device is provided, which includes：Substrate；At least
One photoelectric conversion unit is formed in the substrate, which can absorb visible light to generate electronics and energy
Enough keep electronics；Infrared sensing layer, is formed in substrate, the infrared sensing layer be located at least one photoelectric conversion unit it
On, and infra-red radiation can be absorbed to generate electronics；And electrode, the electrode are formed on infrared sensing layer.
According to one embodiment, semiconductor device further includes barrier layer, barrier layer be formed in substrate and infrared sensing layer it
Between.
According to one embodiment, semiconductor device further includes the first insulating layer and second insulating layer, wherein the first insulating layer
Electrode is clipped in the middle with second insulating layer.
According to one embodiment, by applying bias voltage to electrode, the electronics generated in infrared sensing layer being capable of tunnel
Through photoelectric conversion unit.
According to one embodiment, semiconductor device further includes signal read circuits, for reading in photoelectric conversion unit
The electronics of holding.
According to one embodiment, semiconductor device further includes fixed charge layer, and fixed charge layer is located at substrate and infrared sense
It surveys between layer.
According to one embodiment, the material for forming fixed charge layer includes one of the following or a variety of：Hafnium oxide, oxidation
Aluminium or tantalum oxide.
According to one embodiment, semiconductor device further includes the color-filter element being correspondingly formed with each photoelectric conversion unit,
Color-filter element is formed in substrate.
According to one embodiment, electrode is transparent for visible light to be detected and infrared light.
According to one embodiment, part of the electrode in each color-filter element vertical direction allows to lead to for the color-filter element
The color and infrared light crossed are transparent.
According to one embodiment, photoelectric conversion unit is formed to close on the back side of substrate, and infrared sensing layer is located at substrate
The back side on.
According to one aspect of the disclosure, a kind of use is provided according to the semiconductor device of the first aspect of the disclosure
Method, this method include：The stage is read first, reads the electronics generated in photoelectric conversion unit；The stage is read second,
By applying bias voltage to electrode, the electronics generated in infrared sensing layer is read.
According to one embodiment, before starting any one reading stage, emptying is maintained in photoelectric conversion unit
Electronics.
According to one embodiment, signal read circuits are shared in the first reading stage and the second reading stage.
According to one aspect of the disclosure, a kind of method of manufacture semiconductor device is provided, this method includes：Lining is provided
Bottom；At least one photoelectric conversion unit is formed in the substrate, which can absorb visible light to generate electronics
And electronics can be kept；Infrared sensing layer is formed in substrate, which is located at least one opto-electronic conversion list
On member, and infra-red radiation can be absorbed to generate electronics；And form electrode on infrared sensing layer.
According to one embodiment, method further includes forming barrier layer, barrier layer be formed on substrate and infrared sensing layer it
Between.
According to one embodiment, method further include to form the first insulating layer and second insulating layer, wherein the first insulating layer and
Electrode is clipped in the middle by second insulating layer.
According to one embodiment, bias voltage is applied to infrared sensing layer via electrode, is generated in infrared sensing layer
Electronics can be tunneling to photoelectric conversion unit.
According to one embodiment, method further includes forming signal read circuits, is protected in photoelectric conversion unit for reading
The electronics held.
According to one embodiment, method further includes forming fixed charge layer, and fixed charge layer is formed on substrate and infrared
Between sensed layer.
According to one embodiment, the material for forming fixed charge layer includes one of the following or a variety of：Hafnium oxide, oxidation
Aluminium or tantalum oxide.
According to one embodiment, method further includes forming colour filter member corresponding with each photoelectric conversion unit in substrate
Part.
According to one embodiment, electrode is transparent for visible light to be detected and infrared light.
According to one embodiment, part of the electrode in each color-filter element vertical direction is for infra-red radiation and the filter
Color component allow by color for be transparent.
According to one embodiment, photoelectric conversion unit is formed to close on the back side of substrate, and infrared sensing layer is located at substrate
The back side on.
Word "front", "rear", "top", "bottom" in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other, which is orientated in other different orientations, to be operated.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific implementation mode
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual realization method with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including profit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of semiconductor device, which is characterized in that including：
Substrate；
At least one photoelectric conversion unit, formed in the substrate, the photoelectric conversion unit can absorb visible light to
It generates electronics and electronics can be kept；
Infrared sensing layer is formed in the substrate, and the infrared sensing layer is located at least one photoelectric conversion unit,
And infra-red radiation can be absorbed to generate electronics；And
Electrode, the electrode are formed on the infrared sensing layer.
2. semiconductor device according to claim 1, it is characterised in that：
The semiconductor device further includes barrier layer, and the barrier layer is formed between the substrate and the infrared sensing layer.
3. semiconductor device according to claim 1, it is characterised in that：
The semiconductor device further includes the first insulating layer and second insulating layer, wherein first insulating layer and described second is absolutely
The electrode is clipped in the middle by edge layer.
4. semiconductor device according to claim 2, it is characterised in that：
By applying bias voltage to the electrode, the electronics generated in the infrared sensing layer can be tunneling to the photoelectricity
Converting unit.
5. semiconductor device according to claim 1, it is characterised in that：
The semiconductor device further includes signal read circuits, for reading the electronics kept in the photoelectric conversion unit.
6. semiconductor device according to claim 1, it is characterised in that：
The semiconductor device further includes fixed charge layer, and the fixed charge layer is located at the substrate and the infrared sensing layer
Between.
7. wanting the semiconductor device described in 6 according to right, it is characterised in that：
The material for forming the fixed charge layer includes one of the following or a variety of：Hafnium oxide, aluminium oxide or tantalum oxide.
8. semiconductor device according to claim 1, it is characterised in that：
The semiconductor device further includes the color-filter element being correspondingly formed with each photoelectric conversion unit, and the color-filter element is formed
In the substrate.
9. semiconductor device according to claim 1, it is characterised in that：
The electrode is transparent for visible light to be detected and infrared light.
10. semiconductor device according to claim 8, it is characterised in that：
Part of the electrode in each color-filter element vertical direction for the color-filter element allow by color and red
It is outer just transparent.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227091A (en) * | 2007-03-12 | 2008-09-25 | Fujifilm Corp | Photoelectric converting element and solid-state image pickup device |
| CN103236433A (en) * | 2012-01-06 | 2013-08-07 | 微软公司 | Broadband imager |
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2018
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227091A (en) * | 2007-03-12 | 2008-09-25 | Fujifilm Corp | Photoelectric converting element and solid-state image pickup device |
| CN103236433A (en) * | 2012-01-06 | 2013-08-07 | 微软公司 | Broadband imager |
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Application publication date: 20180925 |