CN108566085A - A kind of negative electricity source generating circuit of novel high-pressure device control circuit - Google Patents
A kind of negative electricity source generating circuit of novel high-pressure device control circuit Download PDFInfo
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- CN108566085A CN108566085A CN201810121400.6A CN201810121400A CN108566085A CN 108566085 A CN108566085 A CN 108566085A CN 201810121400 A CN201810121400 A CN 201810121400A CN 108566085 A CN108566085 A CN 108566085A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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Abstract
The invention discloses a kind of negative electricity source generating circuits of novel high-pressure device control circuit, are related to the negative supply circuit field of high tension apparatus control circuit；A kind of negative electricity source generating circuit of novel high-pressure device control circuit, including high voltage control unit, input voltage VIN and GND, the high voltage control unit includes dual pressure control switch MP5, further includes the low-voltage control switch MN4 being connect with dual pressure control switch MP5 and connect the voltage detecting circuit for detecting input voltage VIN with low-voltage control switch MN4；The present invention solves existing thin grid oxygen high tension apparatus control circuit can only high-pressure work, low pressure input condition has achieved the effect that thin grid oxygen high tension apparatus control circuit generates floating ground guarantee of power low pressure normal work because of the problem of influence of dual pressure control switch gate source voltage causes the voltage of control circuit to cause control circuit can not work normally with the voltage difference reduction on ground.
Description
Technical field
The present invention relates to the negative electricity source circuit of high tension apparatus control circuit, especially a kind of novel high-pressure device control circuit
Negative electricity source generating circuit.
Background technology
In high tension apparatus circuit design, increasingly require circuit that can be worked normally when inputting high-low voltage.In height
In volt circuit, the grid voltage of thin grid oxygen high tension apparatus can not be high pressure resistant, therefore in order to prevent under high-pressure situations to thin grid oxygen high pressure
The breakdown of PMOS tube grid, it is necessary to which its grid voltage is controlled between (VDDH-VDD)~VDDH.It usually requires to thin grid oxygen
HVPMOS tube grids carry out clamping voltage-controlled system.Conventional control circuit can be worked normally in high input voltage, VHGND=VBIAS+
| VGS, MP1 |, VGS is gate source voltage, and VBIAS is bias voltage；After input voltage is lower, VHGND=VBIAS+ | VGS,
MP1 |, cause the difference of VIN and VHGND to become smaller (i.e. the power supply of grid control circuit and floating ground gap is too small) so that grid
Pole control circuit can not work normally, (such as VIN=2.5V, | VGS1 |=1V, then VIN-VHGND<=1.5V (relatively low electricity
Pressure), when VIN is as low as 2.5, power supply and the voltage difference of control circuit can be even lower as low as 1.5V, so as to cause control circuit
It may can not work normally, and then cause device (HVPMOS) possibly can not normally (threshold voltage of HVPMOS is at least by driving
For 1V)), and then influence the function of entire circuit at low voltage.Therefore, it is necessary to a floating ground voltages as thin grid oxygen high pressure
The negative supply of device control circuit makes control circuit that can also work normally under low pressure.
Invention content
It is an object of the invention to：The present invention provides a kind of negative supplies of novel high-pressure device control circuit to generate electricity
Road, solve existing thin grid oxygen high tension apparatus control circuit can only high-pressure work, low voltage situations because by VBIAS voltages and
The problem of influence of MP1 pipe gate source voltages, input voltage causes control circuit can not work normally with the reduction of output voltage difference.
The technical solution adopted by the present invention is as follows：
A kind of negative electricity source generating circuit of novel high-pressure device control circuit, including high voltage control unit, input voltage VIN
And GND, the high voltage control unit includes dual pressure control switch MP5, further includes the low pressure control being connect with dual pressure control switch MP5
It makes switch MN4 and connect the voltage detecting circuit for detecting input voltage VIN with low-voltage control switch MN4.
Preferably, the voltage detecting circuit includes electric current comparing unit and the current mirror that is connect with electric current comparing unit
Unit.
Preferably, the electric current comparing unit includes current source U2, current mirror unit include metal-oxide-semiconductor MP1, MP2, MP3,
MP4, MN2, MN3 and MN1, physical circuit connection are as follows：The source electrode of metal-oxide-semiconductor MP1 and MP4 are all connected with input voltage VIN, metal-oxide-semiconductor
MP1 grids connect metal-oxide-semiconductor MP2 source electrodes after connecting its drain electrode, and metal-oxide-semiconductor MP2 grids connect metal-oxide-semiconductor MP3 source electrodes after connecting its drain electrode,
Metal-oxide-semiconductor MP3 grids connect connection metal-oxide-semiconductor MN1 drain electrodes after its drain electrode, and metal-oxide-semiconductor MN1 grids connect current source VBN1, metal-oxide-semiconductor MN1
Source electrode connects GND, and the grid of metal-oxide-semiconductor MP4 connects metal-oxide-semiconductor MP1 grids, the drain electrode connection metal-oxide-semiconductor MN2 drain electrodes of metal-oxide-semiconductor MP4, MOS
Pipe MN2 drain electrodes are connect with its grid, and metal-oxide-semiconductor MN2 source electrodes connect GND, and metal-oxide-semiconductor MN2 grids are connect with metal-oxide-semiconductor MN3 grids, MOS
Pipe MN3 source electrodes connect GND, the one end metal-oxide-semiconductor MN3 drain electrode connection current source U2, and the current source U2 other ends connect input voltage VIN,
Metal-oxide-semiconductor MN3 drain electrodes are also connected with low-voltage control switch MN4 grids.
Preferably, the connection of the low-voltage control switch MN4 and voltage detecting circuit and high voltage control unit are as follows：Low pressure
The source electrode for controlling switch MN4 connects GND, drain electrode connection dual pressure control switch MP5 source electrodes, and dual pressure control switch MP5 drain electrodes connect
GND is met, dual pressure control switch MP5 grids are High voltage output VBIAS, and low-voltage control switch MN4 grids are that low pressure exports VY.
Preferably, the high voltage control unit further include PMOS control circuits, NMOS control circuit resistance R1, PMOS tube and
NMOS tube.
Preferably, the circuit connection of the high voltage control unit is as follows：High pressure is connected after input voltage VIN connection resistance R1
Switch MP5 source electrodes are controlled, input voltage VIN is also connected with the ends Vin of PMOS control circuits, and the connection of the ends PMOS control circuit GND is high
Voltage-controlled system switch MP5 source electrodes, PMOS tube source electrode connect input voltage VIN, and grid connects PMOS control circuit control terminals, leakage
Pole connects NMOS tube drain electrode, and NMOS tube grid connects NMOS control circuit control terminals, and NMOS tube source electrode connects GND, NMOS controls
Circuit vdd terminal connects VDD, and the ends GND connect GND.
In conclusion by adopting the above-described technical solution, the beneficial effects of the invention are as follows：
1. it is defeated to control dual pressure control switch by adding low-voltage control switch and voltage detecting circuit if high pressure by the present invention
Go out high pressure and ensure normal circuit work, low-voltage control switch output is controlled if low pressure and is meeting the low pressure guarantee circuit of condition just
Often work, solve existing high tension apparatus control circuit can only high-pressure work, low voltage situations because dual pressure control switch grid
The problem of source voltage influence causes input voltage to cause control circuit can not work normally with the reduction of output voltage difference, reach
High tension apparatus control circuit generates the effect that negative supply ensures low pressure normal work；
2. voltage detecting circuit of the present invention is by mirror image unit and comparing unit, simple in structure, power consumption is small, realizes efficiently inspection
It surveys, the practicability of voltage detecting circuit is provided.
Description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the circuit diagram of the present invention；
Fig. 2 is the existing high-voltage control circuit figure of the present invention；
Fig. 3 is the design sketch of the present invention.
Specific implementation mode
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
It elaborates with reference to Fig. 1-3 couples of present invention.
Embodiment 1
A kind of negative electricity source generating circuit of novel high-pressure device control circuit, including high voltage control unit, input voltage VIN
And GND, the high voltage control unit includes dual pressure control switch MP5, further includes the low pressure control being connect with dual pressure control switch MP5
It makes switch MN4 and connect the voltage detecting circuit for detecting input voltage VIN with low-voltage control switch MN4.It is controlled if high pressure
Dual pressure control switch output high pressure processed ensures normal circuit work, and low-voltage control switch output is controlled if low pressure and meets condition
Low pressure ensures the normal work of circuit.
Embodiment 2
Voltage detecting circuit includes electric current comparing unit and the current mirror unit being connect with electric current comparing unit, electric current ratio
Include current source U2 compared with unit, current mirror unit includes metal-oxide-semiconductor MP1, MP2, MP3, MP4, MN2, MN3 and MN1, physical circuit
Connection is as follows：The source electrode of metal-oxide-semiconductor MP1 and MP4 are all connected with input voltage VIN, and metal-oxide-semiconductor MP1 grids connect MOS after connecting its drain electrode
Pipe MP2 source electrodes, metal-oxide-semiconductor MP2 grids connect metal-oxide-semiconductor MP3 source electrodes after connecting its drain electrode, and metal-oxide-semiconductor MP3 grids connect after connecting its drain electrode
Metal-oxide-semiconductor MN1 drain electrodes are connect, metal-oxide-semiconductor MN1 grids connect current source VBN1, and metal-oxide-semiconductor MN1 source electrodes connect GND, the grid of metal-oxide-semiconductor MP4
Metal-oxide-semiconductor MP1 grids, the drain electrode connection metal-oxide-semiconductor MN2 drain electrodes of metal-oxide-semiconductor MP4 are connected, metal-oxide-semiconductor MN2 drain electrodes are connect with its grid, MOS
Pipe MN2 source electrodes connect GND, and metal-oxide-semiconductor MN2 grids are connect with metal-oxide-semiconductor MN3 grids, and metal-oxide-semiconductor MN3 source electrodes connect GND, metal-oxide-semiconductor MN3
The one end drain electrode connection current source U2, the current source U2 other ends connect input voltage VIN, and metal-oxide-semiconductor MN3 drain electrodes are also connected with low voltage control
Switch MN4 grids.
Low-voltage control switch MN4 and the connection of voltage detecting circuit and high voltage control unit are as follows：Low-voltage control switch MN4
Source electrode connect GND, drain electrode connection dual pressure control switch MP5 source electrodes, dual pressure control switch MP5 drain electrode connection GND is high voltage-controlled
System switch MP5 grids are High voltage output VBIAS, and low-voltage control switch MN4 grids are that low pressure exports VY.
High voltage control unit further includes PMOS control circuits, NMOS control circuit resistance R1, PMOS tube and NMOS tube, high pressure
The circuit connection of control unit is as follows：Input voltage VIN connects dual pressure control switch MP5 source electrodes, input electricity after connecting resistance R1
Pressure VIN is also connected with the ends Vin of PMOS control circuits, and the ends PMOS control circuit GND connect dual pressure control switch MP5 source electrodes, PMOS
Pipe source electrode connects input voltage VIN, and grid connects PMOS control circuit control terminals, drain electrode connection NMOS tube drain electrode, NMOS
Tube grid connects NMOS control circuit control terminals, and NMOS tube source electrode connects GND, and NMOS control circuit vdd terminals connect VDD, GND
End connection GND.
Resistance R1 generally uses kilohm grade, the present embodiment to use 5K Ω, is metal-oxide-semiconductor MP5 predetermined currents, and metal-oxide-semiconductor MN1 will
The corresponding electric currents of current source VBN1 are supplied to metal-oxide-semiconductor MP3-MP1, metal-oxide-semiconductor MP1 and metal-oxide-semiconductor MP4 mirror images, metal-oxide-semiconductor MN2 and metal-oxide-semiconductor
MN3 mirror images, current source U2 electric currents relatively judge the height of input voltage VIN compared with metal-oxide-semiconductor MN3 drain currents, to carrying out
High pressure and low voltage control ensure its normal work to provide negative supply in the case of operating on low voltage；
Operation principle：When input voltage VIN is relatively low, the drain voltage VDS of metal-oxide-semiconductor MN1 is very low, MP1, MP2, MP3,
Electric current very little (i.e. I1 very littles) on this branch of MN1, the electric current of metal-oxide-semiconductor MP4 mirror image metal-oxide-semiconductors MP1, I2=K*I1；Therefore metal-oxide-semiconductor
Also very little, metal-oxide-semiconductor MN2 and metal-oxide-semiconductor MN3 play electric current and compare the electric current I2 of MP4, I1 very littles, I2<I3 (ideal currents
Source), VY is got higher, and low-voltage control switch MN4 conductings are opened, floating ground potential VHGND=VDS, close to 0V；Work as input voltage VIN
When higher, bias voltage VBIAS is relatively high, I2>I3 (ideal current source), VY is lower, low-voltage control switch MN4 stoppings,
Dual pressure control switch MP5 conducting normal work, floating ground potential VHGND=VBIAS+VGS, floating ground potential VHGND can be with
Input voltage VIN is increased and is increased.As shown in figure 3, the curve that floating ground potential VHGND changes with input voltage VIN, dotted line generation
It is presented with framework, solid line is the framework of the application, and the pressure difference of the VIN-VHGND of the application is big compared with existing framework, in low voltage situations
Under, VHGND is avoided under existing low voltage situations close to 0 because of pressure difference too small the shortcomings that can not driving high tension apparatus, electricity of the invention
Pressure detection circuit realizes the power range that grid control circuit is expanded in low input, to ensure that control circuit
Normal work.
Claims (6)
1. a kind of negative electricity source generating circuit of novel high-pressure device control circuit, including high voltage control unit, input voltage VIN and
GND, the high voltage control unit include dual pressure control switch MP5, it is characterised in that：Further include connecting with dual pressure control switch MP5
The low-voltage control switch MN4 that connects and it connect the voltage detecting circuit for detecting input voltage VIN with low-voltage control switch MN4.
2. a kind of negative electricity source generating circuit of novel high-pressure device control circuit according to claim 1, it is characterised in that：
The voltage detecting circuit includes electric current comparing unit and the current mirror unit being connect with electric current comparing unit.
3. a kind of negative electricity source generating circuit of novel high-pressure device control circuit according to claim 2, it is characterised in that：
The electric current comparing unit includes current source U2, current mirror unit include metal-oxide-semiconductor MP1, MP2, MP3, MP4, MN2, MN3 and
MN1, physical circuit connection are as follows：The source electrode of metal-oxide-semiconductor MP1 and MP4 are all connected with input voltage VIN, and metal-oxide-semiconductor MP1 grids connect it
Metal-oxide-semiconductor MP2 source electrodes are connected after drain electrode, metal-oxide-semiconductor MP2 grids connect metal-oxide-semiconductor MP3 source electrodes, metal-oxide-semiconductor MP3 grids after connecting its drain electrode
Connection metal-oxide-semiconductor MN1 drains after connecting its drain electrode, and metal-oxide-semiconductor MN1 grids connect current source VBN1, and metal-oxide-semiconductor MN1 source electrodes connect GND,
The grid of metal-oxide-semiconductor MP4 connects metal-oxide-semiconductor MP1 grids, the drain electrode connection metal-oxide-semiconductor MN2 drain electrodes of metal-oxide-semiconductor MP4, metal-oxide-semiconductor MN2 drain electrodes with
Its grid connects, and metal-oxide-semiconductor MN2 source electrodes connect GND, and metal-oxide-semiconductor MN2 grids are connect with metal-oxide-semiconductor MN3 grids, and metal-oxide-semiconductor MN3 source electrodes connect
GND, the one end metal-oxide-semiconductor MN3 drain electrode connection current source U2 are met, the current source U2 other ends connect input voltage VIN, metal-oxide-semiconductor MN3 drain electrodes
It is also connected with low-voltage control switch MN4 grids.
4. a kind of negative electricity source generating circuit of novel high-pressure device control circuit according to claim 3, it is characterised in that：
The connection of the low-voltage control switch MN4 and voltage detecting circuit and high voltage control unit are as follows：The source of low-voltage control switch MN4
Pole connects GND, drain electrode connection dual pressure control switch MP5 source electrodes, and dual pressure control switch MP5 drain electrodes connect GND, and high voltage control is opened
Pass MP5 grids are High voltage output VBIAS, and low-voltage control switch MN4 grids are that low pressure exports VY.
5. a kind of negative electricity source generating circuit of novel high-pressure device control circuit according to claim 1, it is characterised in that：
The high voltage control unit further includes PMOS control circuits, NMOS control circuit resistance R1, PMOS tube and NMOS tube.
6. a kind of negative electricity source generating circuit of novel high-pressure device control circuit according to claim 5, it is characterised in that：
The circuit connection of the high voltage control unit is as follows：Input voltage VIN connects the sources connection dual pressure control switch MP5 after resistance R1
Pole, input voltage VIN are also connected with the ends Vin of PMOS control circuits, and the ends PMOS control circuit GND connect dual pressure control switch MP5
Source electrode, PMOS tube source electrode connect input voltage VIN, and grid connects PMOS control circuit control terminals, drain electrode connection NMOS tube
Drain electrode, NMOS tube grid connect NMOS control circuit control terminals, and NMOS tube source electrode connects GND, the connection of NMOS control circuit vdd terminals
The end VDD, GND connects GND.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810121400.6A CN108566085B (en) | 2018-02-07 | 2018-02-07 | Negative power supply generating circuit of high-voltage device control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810121400.6A CN108566085B (en) | 2018-02-07 | 2018-02-07 | Negative power supply generating circuit of high-voltage device control circuit |
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| Publication Number | Publication Date |
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| CN108566085A true CN108566085A (en) | 2018-09-21 |
| CN108566085B CN108566085B (en) | 2020-05-08 |
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| CN201810121400.6A Active CN108566085B (en) | 2018-02-07 | 2018-02-07 | Negative power supply generating circuit of high-voltage device control circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116780920A (en) * | 2023-08-24 | 2023-09-19 | 苏州锴威特半导体股份有限公司 | Negative voltage comparison circuit |
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| CN102931833A (en) * | 2011-08-08 | 2013-02-13 | 上海华虹Nec电子有限公司 | Circuit for converting high voltage into low voltage in analogue circuit |
| JP2017085705A (en) * | 2015-10-23 | 2017-05-18 | 株式会社アイ・ライティング・システム | Drive circuit |
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|---|---|---|---|---|
| CN201629731U (en) * | 2010-04-09 | 2010-11-10 | Bcd半导体制造有限公司 | Bootstrap circuit with reinforced low voltage |
| CN102571067A (en) * | 2010-12-21 | 2012-07-11 | 三美电机株式会社 | Level shift circuit and switching power supply device |
| CN102931833A (en) * | 2011-08-08 | 2013-02-13 | 上海华虹Nec电子有限公司 | Circuit for converting high voltage into low voltage in analogue circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116780920A (en) * | 2023-08-24 | 2023-09-19 | 苏州锴威特半导体股份有限公司 | Negative voltage comparison circuit |
| CN116780920B (en) * | 2023-08-24 | 2023-11-03 | 苏州锴威特半导体股份有限公司 | Negative voltage comparison circuit |
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| Publication number | Publication date |
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| CN108566085B (en) | 2020-05-08 |
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Effective date of registration: 20200604 Address after: 518000 Guangdong Shenzhen Futian District Sha tou street Che Kung Temple TAIR eight road 15 deep 15C05 Patentee after: SHENZHEN INNOVATION LOWPOWER SEMICONDUCTOR Co.,Ltd. Address before: 610041 Chengdu, Sichuan, China (Sichuan) free trade pilot area, Chengdu high tech Zone, 199 Tianfu four Street 2, 6 level 1. Patentee before: CHENGDU KECHENG CHUANGXIN TECHNOLOGY Co.,Ltd. |
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Address after: 518000 15c05, 15th floor, Shenye Tairan building, Tairan 8th Road, chegong temple, Shatou street, Futian District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Weiyuan Semiconductor Co.,Ltd. Address before: 518000 15c05, 15th floor, Shenye Tairan building, Tairan 8th Road, chegong temple, Shatou street, Futian District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN INNOVATION LOWPOWER SEMICONDUCTOR Co.,Ltd. |
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