CN108550625A - A kind of thin film transistor and its manufacturing method - Google Patents
A kind of thin film transistor and its manufacturing method Download PDFInfo
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- CN108550625A CN108550625A CN201810350248.9A CN201810350248A CN108550625A CN 108550625 A CN108550625 A CN 108550625A CN 201810350248 A CN201810350248 A CN 201810350248A CN 108550625 A CN108550625 A CN 108550625A
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- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 255
- 229910052751 metal Inorganic materials 0.000 claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 51
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000011241 protective layer Substances 0.000 claims abstract description 20
- 239000004411 aluminium Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 239000010955 niobium Substances 0.000 claims abstract description 10
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 22
- 238000009413 insulation Methods 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000000463 material Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910000809 Alumel Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 silicon nitride compound Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- HTCXJNNIWILFQQ-UHFFFAOYSA-M emmi Chemical compound ClC1=C(Cl)C2(Cl)C3C(=O)N([Hg]CC)C(=O)C3C1(Cl)C2(Cl)Cl HTCXJNNIWILFQQ-UHFFFAOYSA-M 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention proposes a kind of thin film transistor and its manufacturing method; the thin film transistor (TFT) includes ohm layer; the ohm layer includes first part, second part and Part III; the second part is between the first part and the Part III; the second part of the ohm layer is corresponding with the bimetallic groove; and the second part of the ohm layer is made to be oxidized to an ohm protective layer by annealing process; first part and the Part III for having completely cut off the ohm layer, increase the stability of thin film transistor (TFT)；In addition, ohm layer is made by using the titanium dioxide doped with metal niobium, aluminium or the two mixture, so that the back of the body raceway groove not subject to damage of thin film transistor (TFT), simultaneously, metal concentration is adjustable in ohm layer, it ensure that the good electric conductivity of thin film transistor (TFT), increase the electrical stability of thin film transistor (TFT).
Description
Technical field
The present invention relates to display panel manufacturing field more particularly to a kind of thin film transistor and its manufacturing methods.
Background technology
LCD (Liquid crystal displays, liquid crystal display) is a kind of flat-panel monitor being widely used,
Backlight distribution of light intensity is mainly modulated by liquid crystal shutter to realize that picture is shown.LCD display device includes TFT (Thin
Film Transistor, thin film transistor (TFT)) device, and TFT-LCD, that is, thin film field effect transistor liquid crystal display, it is such aobvious
Show each liquid crystal pixel on device be all driven by thin film transistor (TFT) integrated behind, thus with high reaction speed,
The features such as high brightness, high contrast, small size, low power consumption, no radiation, occupies leading position in current monitor market.
Wherein, common TFT drivings classification mainly have a-Si TFT (non-crystalline silicon), LTPS TFT (low temperature polycrystalline silicon) and
IGZO TFT (indium gallium zinc oxide, indium gallium zinc).In simple terms, IGZO is a kind of novel semi-conductor
Material has electron mobility more higher than non-crystalline silicon (a-Si) and ON state current, is widely applied to display industry TFT devices
In.IGZO is used as channel material in high performance thin film transistor (TFT) of new generation, to improve display panel resolution ratio,
And make it possible large screen OLED (Organic Light Emitting Diode) TV.
However, currently used BCE (Back Channel Etching, the etching of back of the body raceway groove) bottom-gate IGZO TFT structures
It is relatively simple, but it carries on the back the more difficult making of technique of raceway groove, and conventional method is：(1) dry etching, the method can reduce the electricity of TFT
Learn stability；(2) wet etching, for example, by using hydrogen peroxide, the method is not suitable for large-scale production；(3) increase ESL (etching
Stop layer, etching blocking) protective layer, although structure is complicated, such method is optimal selection in actual production.
Therefore, the third method of Main Basiss of the present invention proposes a kind of Curve guide impeller to the prior art.
Invention content
The present invention provides a kind of thin film transistor and its manufacturing methods, to improve existing thin film transistor (TFT) electrical stability
The disadvantage of difference.
In order to achieve the above objectives, technical solution provided by the invention is as follows：
The present invention proposes a kind of production method of thin film transistor (TFT), wherein the production method packet of the thin film transistor (TFT)
Include step：
S10, a underlay substrate is provided, the first metal layer is formed on the underlay substrate, using the first light shield, to described
The first metal layer graphical treatment, to form the grid of the thin film transistor (TFT)；
S20, gate insulation layer, active layer and ohm layer are sequentially formed on the grid,
Wherein, the ohm layer includes first part, second part and Part III, and the second part is the Europe
Nurse protective layer, the second part is between the first part and the Part III；
S30, second metal layer is formed on the ohm layer, it is graphical to the second metal layer using the second light shield
Processing, to form the source-drain electrode of the thin film transistor (TFT)；
S40, the part ohm layer is made to form ohm protective layer using predetermined technique；
S50, passivation layer is formed on the source-drain electrode, using third light shield, forms passivation layer mistake on the passivation layer
Hole, and form pixel electrode pattern.
According to one preferred embodiment of the present invention, the ohm layer is made of the oxidation film of doping metals.
According to one preferred embodiment of the present invention, the ohm layer by doping niobium, aluminium or the two mixture titanium dioxide
Oxidation film is made.
According to one preferred embodiment of the present invention, the active layer and the ohm layer are by the optical cover process technique system with along with
At.
According to one preferred embodiment of the present invention, the step S30 includes：
Step S301, the second metal layer is deposited on the underlay substrate surface；
Step S302 is coated with photoresist layer in the second metal layer；
Step S303, the photoresist layer through exposure and development after, technique is etched to the second metal layer, forms institute
The source electrode and drain electrode of thin film transistor (TFT) is stated,
Wherein, the second metal layer on the second part of the ohm layer is removed；
Step S304, the photoresist layer is removed.
The invention also provides a kind of thin film transistor (TFT)s, wherein the thin film transistor (TFT) includes：
Underlay substrate；
The first metal layer is formed on the underlay substrate；
Gate insulation layer is formed on the underlay substrate, covers the first metal layer；
Active layer is formed on the gate insulation layer；
Ohm layer is formed on the active layer, and the ohm layer includes first part, second part and third portion
Point, the second part is ohm protective layer, the second part be located at the first part and the Part III it
Between；
Second metal layer is formed on the underlay substrate, covers described the of the gate insulation layer and the ohm layer
A part of and described Part III；
Passivation layer is formed on the underlay substrate, covers the second part of the second metal layer and the ohm layer,
The passivation layer includes passivation layer via hole；
Pixel electrode layer is formed on the passivation layer, electrical by the passivation layer via hole and the second metal layer
Connection.
According to one preferred embodiment of the present invention, the ohm layer is made of the oxidation film of doping metals.
According to one preferred embodiment of the present invention, the ohm layer by doping niobium, aluminium or the two mixture titanium dioxide
Oxidation film is made.
According to one preferred embodiment of the present invention, the active layer and the ohm layer are by the optical cover process technique system with along with
At.
According to one preferred embodiment of the present invention, the second part of the ohm layer forms the Europe by annealing process processing
Nurse protective layer.
Beneficial effects of the present invention are：The present invention is by using the titanium dioxide doped with metal niobium, aluminium or the two mixture
Titanium makes ohm layer so that the back of the body raceway groove of thin film transistor (TFT) not subject to damage；In addition, in ohm layer metal concentration it is adjustable, protect
The good electric conductivity of thin film transistor (TFT) has been demonstrate,proved, the electrical stability of thin film transistor (TFT) is increased.
Description of the drawings
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some invented
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of thin-film transistor array base-plate production method flow chart of the present invention；
Fig. 2A~2J is a kind of thin-film transistor array base-plate production method process flow chart of the present invention；
Fig. 3 is a kind of film layer structure figure of thin film transistor (TFT) of the present invention.
Specific implementation mode
The explanation of following embodiment is referred to the additional illustration, to illustrate the present invention can be used to implement particular implementation
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
Fig. 1 show a kind of step flow chart of thin film transistor (TFT) production method of the preferred embodiment of the present invention, wherein described
Production method includes step：
S10, a underlay substrate is provided, the first metal layer is formed on the underlay substrate, using the first light shield, to described
The first metal layer graphical treatment, to form the grid of the thin film transistor (TFT)；
As shown in Figure 2 A, a underlay substrate 101 is provided first, and the raw material of the underlay substrate 101 can be glass base
One kind in plate, quartz base plate, resin substrate etc.；
As shown in Figure 2 B, the first metal layer 102, the thickness of the first metal layer 102 are deposited on the underlay substrate 101
Degree is generally selected in 400~1500 Ethylmercurichlorendimides, and depositional mode can select physical vapour deposition (PVD)；In addition, metal material can usually be adopted
With metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper, the composite structure of above-mentioned different materials film can also be used；
As shown in Figure 2 C, the first optical cover process technique is used to the first metal layer 102, in the first metal layer
It is coated with the first photoresist layer on 102, is handled by the patterning processes of exposure, development and the first etching using mask plate, the institute made
It states the first metal layer 102 and forms the grid of the thin film transistor (TFT), and remove first photoresist layer.
S20, gate insulation layer, active layer and ohm layer are sequentially formed on the grid,
Wherein, the ohm layer includes first part, second part and Part III, and the second part is the Europe
Nurse protective layer, the second part is between the first part and the Part III；
As shown in Figure 2 D, one layer of gate insulation layer 103 is formed on the grid 101, the gate insulation layer 103 is by described the
One metal layer 102 and the underlay substrate 101 cover, and in the present embodiment, the material of the gate insulation layer 103 is silicon nitride,
Silica and silicon oxynitride etc. can also be used, it is preferred that the thickness that the gate insulation layer 103 deposits is generally 1500~4000
Ethylmercurichlorendimide；
As shown in Figure 2 E, one layer of active layer 104, ohm layer 105 are coated successively on the gate insulation layer 103, it is described to have
The thickness that active layer 104 deposits is generally less than 500 Ethylmercurichlorendimides, and the thickness that the ohm layer 105 deposits is generally 1~500 nanometer；Its
Secondary, the active layer 104 and the ohm layer 105 use third optical cover process technique simultaneously, are applied on the ohm layer 105
The second photoresist layer of cloth is handled using mask plate by the patterning processes of exposure, development and the second etching, the active layer made
104 and ohm layer 105 be formed simultaneously predetermined pattern, and remove second photoresist layer；
As shown in Figure 2 F, the ohm layer 105 includes first part 106, second part 107 and Part III 108, institute
Second part 107 is stated between the first part 106 and the Part III 108；In a preferred embodiment of the invention, institute
Ohm layer 105 is stated to be made of the titanium dioxide oxidation film of doping metals, the metal adulterated in the ohm layer 105 be niobium, aluminium or
The electric conductivity of the mixture of the two, the ohm layer 105 can be adjusted according to the metal concentration adulterated, also, titanium dioxide
Ohm layer 105 made by titanium oxide film has higher acid resistance, for the technique using wet etching, reduces follow-up erosion
Carving technology corrodes ohm layer 105.
S30, second metal layer is formed on the ohm layer, it is graphical to the second metal layer using the second light shield
Processing, to form the source-drain electrode of the thin film transistor (TFT)；
As shown in Figure 2 G, the second metal layer 109,102 He of the first metal layer are formed on the ohm layer 105
The second metal layer 109 can use the method deposited metal layer of sputtering, in the present embodiment, the second metal layer
109 thickness is generally selected in 400~1500 Ethylmercurichlorendimides；In addition, the material of the second metal layer 109 and the first metal layer
102 material can be identical or different, and molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper etc. usually may be used in metal material
Metal can also use the composite structure of above-mentioned different materials film；
Secondly, the second optical cover process technique is used to the second metal layer 109, is applied in the second metal layer 109
Cloth third photoresist layer is handled using mask plate by the patterning processes that exposure, development and third etch, second gold medal made
Belong to layer 109 and form the source electrode and drain electrode of the thin film transistor (TFT), and removes the third photoresist layer；
Wherein, in third etch process, the second metal layer 109 is formed with a groove 110, and the groove 110 is right
Answer the second part 107 of the ohm layer 105, in the present embodiment, the first part 106 of the ohm layer 105 with it is described thin
Source electrode or drain electrode one in film transistor are electrically connected, Part III 108 and the thin film transistor (TFT) of the ohm layer 105
In source electrode or drain electrode kind another one be electrically connected.
S40, the part ohm layer is made to form ohm protective layer using predetermined technique；
As illustrated in figure 2h, the second metal layer 109 forms a groove 110 through the third etch process, to make
The second part 107 for obtaining the ohm layer 105 exposes；It in the present embodiment, can be with selective annealing technique to ohm layer described in this
105 second part 107 is handled, and main use is aided with oxygen, nitrous oxide or combination object and carries out at annealing
To form ohm protective layer 111, which is aoxidized and resistivity is caused to weaken reason, is become insulator, is made it to play
The effect of etch stopper protective layer.
S50, passivation layer is formed on the source-drain electrode, using third light shield, forms passivation layer mistake on the passivation layer
Hole, and form pixel electrode pattern；
As shown in figure 2i, a passivation layer 112 is formed on the source-drain electrode, the passivation layer 112 is by second metal
Layer 109, ohm protective layer 111 all coverings, it is preferred that 112 material of the passivation layer is usually silicon nitride compound, oxidation silicon
The mixture of compound or the two, the thickness that the passivation layer 112 deposits are generally 1500~4000 Ethylmercurichlorendimides；This step is mainly right
The passivation layer 112 uses the 4th optical cover process technique, passes through the composition work of exposure, development and the 4th etching using mask plate
Skill processing, and passivation layer via hole 113 is formed on the passivation layer 112；
As shown in fig. 2j, it is coated with solution-type transparent metal on the passivation layer 112, the transparent metal is made to pass through passivation layer
Via 113 is connect with the second metal layer 109 of the thin film transistor (TFT), and using in the methods of baking removal transparent metal solution
Solvent, such as make annealing treatment, to the solution-type transparent metal carry out curing process, formed the thin film transistor (TFT) pixel electricity
Pole layer 114.
The present invention proposes a kind of production method of thin film transistor (TFT), by using mixed doped with metal niobium, aluminium or the two
The titanium dioxide for closing object makes ohm layer so that the back of the body raceway groove of thin film transistor (TFT) not subject to damage；The ohm layer includes first
Partly, second part and Part III, the second part are described between the first part and the Part III
The second part of ohm layer is corresponding with the bimetallic groove, and makes second of the ohm layer by annealing process
Divide and be oxidized to an ohm protective layer, has completely cut off first part and the Part III of the ohm layer, increased thin film transistor (TFT)
Stability；In addition, in ohm layer metal concentration it is adjustable, ensure that the good electric conductivity of thin film transistor (TFT), increase film crystalline substance
The electrical stability of body pipe.
Fig. 3 show a kind of film layer structure figure of thin film transistor (TFT) of the preferred embodiment of the present invention, wherein the film crystal
Pipe includes：
The raw material of underlay substrate 201, the underlay substrate 201 can be glass substrate, quartz base plate, resin substrate etc.
In one kind；
The thickness of the first metal layer 202, the first metal layer 202 is generally selected in 400~1500 Ethylmercurichlorendimides, and depositional mode can
To select physical vapour deposition (PVD)；In addition, molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper etc. usually may be used in metal material
Metal can also use the composite structure of above-mentioned different materials film；The first metal layer 202 is through the first optical cover process work
Skill forms the grid and grid line of the thin film transistor (TFT)；
Gate insulation layer 203, the gate insulation layer 203 cover the first metal layer 202 and the underlay substrate 201,
In the present embodiment, the material of the gate insulation layer 203 is silicon nitride, can also use silica and silicon oxynitride etc., preferably
, the thickness that the gate insulation layer 203 deposits is generally 1500~4000 Ethylmercurichlorendimides；
Active layer 204, the thickness that the active layer 204 deposits are generally less than 500 Ethylmercurichlorendimides, and the active layer 204 is IGZO,
But it is not limited to IGZO, the oxide semiconductor for meeting technique also may be used；
Ohm layer, the thickness of ohm layer deposition are generally 1~500 nanometer, the active layer 204 and described ohm
Layer is made of the same optical cover process technique of use；In addition, the ohm layer includes first part 206, second part (and in figure
Ohm protective layer 211) and Part III 208, the second part be located at the first part 206 and the Part III
Between 208；In a preferred embodiment of the invention, the ohm layer is made of the titanium dioxide oxidation film of doping metals, the Europe
The metal adulterated in nurse layer is the mixture of niobium, aluminium or the two, and the electric conductivity of the ohm layer can be dense according to the metal adulterated
Degree is adjusted, also, the ohm layer made by titanium dioxide oxidation film has higher acid resistance, for using wet etching
Technique, reduce subsequent etching processes to ohm layer corrode.
Second metal layer 209, the first metal layer 202 and the second metal layer 209 can use the side of sputtering
Method deposited metal layer, in the present embodiment, the thickness of the second metal layer 209 are generally selected in 400~1500 Ethylmercurichlorendimides；Described
Two metal layers 209 form the source electrode and drain electrode of the thin film transistor (TFT) through the second optical cover process technique；In addition, in the second light shield
In making technology, the second metal layer 209 is formed with a groove, and the groove corresponds to the second part of the ohm layer,
In the present embodiment, the first part 206 of the ohm layer is electrically connected with the source electrode in the thin film transistor (TFT) or drain electrode one,
The Part III 208 of the ohm layer and the another one of source electrode or drain electrode kind in the thin film transistor (TFT) are electrically connected.
Ohm protective layer 211, i.e., the second part of the described ohm layer can be with selective annealing technique to ohm layer described in this
Second part is handled, and main use is aided with oxygen, nitrous oxide or combination object and is made annealing treatment with formation
Ohm protective layer 211；The ohm layer after oxidation, resistivity weaken and become insulator, make it to play etch stopper guarantor
The effect of sheath.
Layer passivation layer 212, the passivation layer 212 all covers the second metal layer 209, ohm protective layer 211, excellent
Choosing, 212 material of the passivation layer is usually the mixture of silicon nitride compound, oxidation silicon compound or the two, the passivation
The thickness of 212 deposition of layer is generally 1500~4000 Ethylmercurichlorendimides, and passivation layer via hole is formed on the passivation layer 212；
Pixel electrode layer 214 is formed on the passivation layer 212, and passes through passivation layer via hole and the thin film transistor (TFT)
Second metal layer 209 be electrically connected, the pixel electrode layer 214 be transparent metal.
The present invention proposes a kind of thin film transistor (TFT), including underlay substrate, the first metal layer, gate insulation layer, active layer, Europe
Nurse layer, second metal layer, ohm protective layer, passivation layer and pixel electrode layer, wherein the ohm layer include first part,
Second part and Part III, the second part is between the first part and the Part III, described ohm
The second part of layer is corresponding with the bimetallic groove, and makes the second part quilt of the ohm layer by annealing process
It is oxidized to an ohm protective layer, has completely cut off first part and the Part III of the ohm layer, has increased the stabilization of thin film transistor (TFT)
Property；In addition, making ohm layer by using the titanium dioxide doped with metal niobium, aluminium or the two mixture so that film crystal
The back of the body raceway groove of pipe not subject to damage, meanwhile, metal concentration is adjustable in ohm layer, ensure that the good conduction of thin film transistor (TFT)
Property, increase the electrical stability of thin film transistor (TFT).
In conclusion although the present invention is disclosed above with preferred embodiment, above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention is subject to the range that claim defines.
Claims (10)
1. a kind of production method of thin film transistor (TFT), which is characterized in that including step：
S10, a underlay substrate is provided, the first metal layer is formed on the underlay substrate, using the first light shield, to described first
Metallic layer graphic processing, to form the grid of the thin film transistor (TFT)；
S20, gate insulation layer, active layer and ohm layer are sequentially formed on the grid,
Wherein, the ohm layer includes first part, second part and Part III, and the second part is protected for described ohm
Sheath, the second part is between the first part and the Part III；
S30, second metal layer is formed on the ohm layer, using the second light shield, to the second metal layer graphical treatment,
To form the source-drain electrode of the thin film transistor (TFT)；
S40, the part ohm layer is made to form ohm protective layer using predetermined technique；
S50, passivation layer is formed on the source-drain electrode, using third light shield, forms passivation layer via hole on the passivation layer, and
Form pixel electrode pattern.
2. manufacturing method according to claim 1, which is characterized in that the ohm layer by doping metals oxidation film system
At.
3. production method according to claim 2, which is characterized in that the ohm layer is by the mixed of doping niobium, aluminium or the two
The titanium dioxide oxidation film for closing object is made.
4. manufacturing method according to claim 1, which is characterized in that the active layer and the ohm layer are by with along with
Optical cover process technique is made.
5. manufacturing method according to claim 1, which is characterized in that the step S30 includes：
Step S301, the second metal layer is deposited on the underlay substrate surface；
Step S302 is coated with photoresist layer in the second metal layer；
Step S303, the photoresist layer through exposure and development after, technique is etched to the second metal layer, is formed described thin
The source electrode and drain electrode of film transistor,
Wherein, the second metal layer on the second part of the ohm layer is removed；
Step S304, the photoresist layer is removed.
6. a kind of thin film transistor (TFT), which is characterized in that including：
Underlay substrate；
The first metal layer is formed on the underlay substrate；
Gate insulation layer is formed on the underlay substrate, covers the first metal layer；
Active layer is formed on the gate insulation layer；
Ohm layer is formed on the active layer, and the ohm layer includes first part, second part and Part III, institute
It is ohm protective layer to state second part, and the second part is between the first part and the Part III；
Second metal layer is formed on the underlay substrate, covers described first of the gate insulation layer and the ohm layer
Divide and the Part III；
Passivation layer is formed on the underlay substrate, covers the second part of the second metal layer and the ohm layer, described
Passivation layer includes passivation layer via hole；
Pixel electrode layer is formed on the passivation layer, is electrically connected by the passivation layer via hole and the second metal layer.
7. thin film transistor (TFT) according to claim 6, which is characterized in that the ohm layer by doping metals oxidation film system
At.
8. thin film transistor (TFT) according to claim 7, which is characterized in that the ohm layer is by doping niobium, aluminium or the two
The titanium dioxide oxidation film of mixture is made.
9. thin film transistor (TFT) according to claim 6, which is characterized in that the active layer and the ohm layer are by same
Road optical cover process technique is made.
10. thin film transistor (TFT) according to claim 6, which is characterized in that the second part of the ohm layer is by annealing
Process forms described.
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