CN108512027B - Annular cavity amplifying device for picosecond seed laser pulse - Google Patents
Annular cavity amplifying device for picosecond seed laser pulse Download PDFInfo
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- CN108512027B CN108512027B CN201810528271.2A CN201810528271A CN108512027B CN 108512027 B CN108512027 B CN 108512027B CN 201810528271 A CN201810528271 A CN 201810528271A CN 108512027 B CN108512027 B CN 108512027B
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- 239000013078 crystal Substances 0.000 claims abstract description 64
- 230000010287 polarization Effects 0.000 claims abstract description 64
- 238000005086 pumping Methods 0.000 claims abstract description 25
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 15
- 230000003321 amplification Effects 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 5
- 239000000498 cooling water Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
- H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The annular cavity amplifying device for picosecond seed laser pulse comprises a picosecond seed source, a polarization beam splitter and first to third plane mirrors, wherein the polarization beam splitter and the first to third plane mirrors are sequentially arranged at four corners of an annular light path respectively; a first laser crystal is arranged in a light path between the first plane mirror and the second plane mirror, and a second laser crystal is arranged in a light path between the second plane mirror and the third plane mirror; the outer sides of the first plane mirror and the second plane mirror are symmetrically provided with a first pumping source and a second pumping source respectively along the straight line where the light beam between the first plane mirror and the second plane mirror is positioned, and focal spots of the first pumping source and the second pumping source are overlapped in the first laser crystal; and third and fourth pump sources are symmetrically arranged on the outer sides of the second and third plane mirrors along the straight line where the light beams between the second and third plane mirrors are positioned respectively, and focal spots of the third and fourth pump sources are overlapped in the second laser crystal. The device has the advantages of high amplification gain, good output power stability and high output light spot quality.
Description
Technical Field
The invention relates to the technical field of picosecond laser amplification, in particular to an annular cavity amplification device for picosecond seed laser pulses.
Background
The solid laser has the advantages of high brightness, high efficiency, compact structure, stable performance, long service life, full solidification and the like, and has important application in the fields of material processing, medical treatment, scientific research, military and the like.
The picosecond laser has the advantage of cold processing in the aspect of material processing due to narrow pulse width, and the full-solid picosecond laser with a single structure, compact appearance, low cost, high power and high brightness is one of research hot spots in the field of solid lasers. However, the output power of the SESAM semiconductor saturated absorber is limited to the magnitude of 10mW due to the damage caused by the thermal effect, so that the SESAM semiconductor saturated absorber cannot meet the high-requirement use requirement.
Disclosure of Invention
The invention provides a ring cavity amplifying device for picosecond seed laser pulse to solve the problem that the conventional picosecond laser is limited to damage to a SESAM semiconductor saturated absorption mirror due to thermal effect, and the output power of the device is limited to the order of 10 mW.
In order to achieve the above object, the present invention provides an annular cavity amplifying device for picosecond seed laser pulses, comprising a picosecond seed source, a polarization beam splitter, a first plane mirror, a second plane mirror and a third plane mirror, wherein:
the first plane mirror, the second plane mirror and the third plane mirror are sequentially and respectively arranged at four corners of the four-sided annular light path, and the picosecond seed source is positioned at the light beam injection end of the polarization beam splitter and used for injecting seed light into the polarization beam splitter;
a first laser crystal is arranged in a light path between the first plane mirror and the second plane mirror, and a second laser crystal is arranged in a light path between the second plane mirror and the third plane mirror;
the outer side of the first plane mirror and the outer side of the second plane mirror are symmetrically provided with a first pumping source and a second pumping source respectively along the straight line where the light beam between the first plane mirror and the second plane mirror is located, and focal spots of the first pumping source and the second pumping source are overlapped in the first laser crystal;
the outer side of the second plane mirror and the outer side of the third plane mirror are symmetrically provided with a third pump source and a fourth pump source respectively along a straight line where a light beam is positioned between the second plane mirror and the third plane mirror, and focal spots of the third pump source and the fourth pump source are overlapped in the second laser crystal;
the light path between the picosecond seed source and the polarization beam splitter is provided with a first half-wave plate, the light path between the polarization beam splitter and the first plane mirror is sequentially provided with a second half-wave plate and a first focusing lens along the light beam transmission direction, and the light path between the third plane mirror and the polarization beam splitter is sequentially provided with a second focusing lens and a third half-wave plate along the light beam transmission direction.
As a further preferable technical scheme of the invention, a first lens group is further arranged on a light path between the first pumping source and the first plane mirror, a second lens group is further arranged on a light path between the second pumping source and the second plane mirror, a third lens group is further arranged on a light path between the third pumping source and the second plane mirror, and a fourth lens group is further arranged on a light path between the fourth pumping source and the third plane mirror.
As a further preferable technical scheme of the invention, the first pump source, the second pump source, the third pump source and the fourth pump source are all semiconductor diode pump sources, the wavelength of each semiconductor diode pump source is 808nm or 88Xnm, and the fiber cores of the output fibers for outputting the first pump source, the second pump source, the third pump source and the fourth pump source are 200-400 um.
As a further preferable technical scheme of the present invention, the first laser crystal and the second laser crystal are both laser crystals with linear polarization radiation property, and the model number is Nd: YVO4 or Nd: GV04.
As a further preferable technical scheme of the invention, the first laser crystal and the second laser crystal are placed at 45 degrees.
As a further preferable technical scheme of the invention, the first laser crystal and the second laser crystal are plated with a pumping light antireflection film and a seed light antireflection film.
As a further preferable technical scheme of the invention, the first laser crystal and the second laser crystal are also connected with circulating cooling water.
As a further preferable technical scheme of the invention, the first plane mirror and the seed light incident beam and the seed light reflected beam in the corresponding light path are respectively at 45 degrees, the second plane mirror and the seed light incident beam and the seed light reflected beam in the corresponding light path are respectively at 45 degrees, and the third plane mirror and the seed light incident beam and the seed light reflected beam in the corresponding light path are respectively at 45 degrees.
As a further preferable technical scheme of the invention, the first plane mirror, the second plane mirror and the third plane mirror are plated with a pumping light antireflection film and a seed light high reflection film.
As a further preferable technical scheme of the invention, the first half-wave plate, the second half-wave plate, the third half-wave plate, the first focusing lens and the second focusing lens are all plated with seed light antireflection films.
The annular cavity amplifying device for picosecond seed laser pulse can achieve the following beneficial effects:
1) The invention is a modularized picosecond seed light amplifying structure, which is applicable to picosecond seed sources with different output powers, polarization states and pulse widths;
2) The invention utilizes the double-end pumping structure and the annular cavity amplifying structure of the laser crystal, thereby greatly improving the conversion efficiency of the pumping light and the amplifying gain of the seed light;
3) In the device, the mode matching of the seed light spots and the pump light spots can be optimized by adjusting the first focusing lens and the first to fourth lens groups, so that the operability is good;
4) In the device, the consistency of the polarization direction of the seed light and the radiation light of the first laser crystal can be matched by adjusting the second half wave plate;
5) In the device, the power of the amplified seed light transmitted by the polarization beam splitter can be adjusted by adjusting the third half wave plate;
6) In the device, the optimal amplifying effect of the seed light can be realized by optimizing the pumping power of the first to fourth pipe pumping sources.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic diagram of an example of the configuration provided by the ring cavity amplification device for picosecond seed laser pulses of the present invention;
FIG. 2 is a schematic diagram of the optical path of the ring cavity amplification device for picosecond seed laser pulses shown in FIG. 1;
fig. 3 is a polarization schematic diagram of seed light.
In the figure: 1. picosecond seed source 2, first half wave plate 3, polarization beam splitter, 4, second half wave plate 5, first focusing lens 6, first plane mirror 7, first laser crystal 8, second plane mirror 9, second laser crystal 10, third plane mirror 11, second focusing lens 12, third half wave plate 13, first pump source 14, first lens group 15, second pump source 16, second lens group 17, third pump source 18, third lens group 19, fourth pump source 20, fourth lens group.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The invention will be further described with reference to the drawings and detailed description. The terms such as "upper", "lower", "left", "right", "middle" and "a" in the preferred embodiments are merely descriptive, but are not intended to limit the scope of the invention, as the relative relationship changes or modifications may be otherwise deemed to be within the scope of the invention without substantial modification to the technical context.
As shown in fig. 1, the ring cavity amplifying device for picosecond seed laser pulse includes a picosecond seed source 1, a polarization beam splitter 3, a first plane mirror 6, a second plane mirror 8, and a third plane mirror 10, wherein:
the polarization beam splitter 3, the first plane mirror 6, the second plane mirror 8 and the third plane mirror 10 are sequentially and respectively arranged at four corners of the four-sided annular light path, and the picosecond seed source 1 is positioned at the light beam injection end of the polarization beam splitter 3 and used for injecting seed light into the polarization beam splitter 3;
a first laser crystal 7 is arranged in the light path between the first plane mirror 6 and the second plane mirror 8, and a second laser crystal 9 is arranged in the light path between the second plane mirror 8 and the third plane mirror 10;
the outer side of the first plane mirror 6 and the outer side of the second plane mirror 8 are symmetrically provided with a first pump source 13 and a second pump source 15 respectively along a straight line where a light beam is positioned between the first plane mirror 6 and the second plane mirror 8, and focal spots of the first pump source 13 and the second pump source 15 are overlapped in the first laser crystal 7;
the outer side of the second plane mirror 8 and the outer side of the third plane mirror 10 are symmetrically provided with a third pump source 17 and a fourth pump source 19 respectively along a straight line where the light beam between the second plane mirror 8 and the third plane mirror 10 is located, and focal spots of the third pump source 17 and focal spots of the fourth pump source 19 are overlapped in the second laser crystal 9;
the light path between the picosecond seed source 1 and the polarization beam splitter 3 is provided with a first half-wave plate 2, the light path between the polarization beam splitter 3 and the first plane mirror 6 is sequentially provided with a second half-wave plate 4 and a first focusing lens 5 along the light beam transmission direction, and the light path between the third plane mirror 10 and the polarization beam splitter 3 is sequentially provided with a second focusing lens 11 and a third half-wave plate 12 along the light beam transmission direction.
In the device of the present invention, as shown in fig. 2, the picosecond seed light transmission optical path outputted from the picosecond seed source 1 is as follows:
the seed light passes through the first half wave plate 2 to rotate the polarization direction of the seed light to be parallel polarization; the seed light with parallel polarization is injected into the polarization beam splitter 3, and the polarization beam splitter 3 is used for filtering the seed light with vertical polarization by transmitting the seed light with parallel polarization direction; the seed light transmitted through the polarization beam splitter 3 reaches the second half-wave plate 4, which rotates the polarization direction of the seed light by 45 °; the seed light rotating by 45 degrees is focused by the first focusing lens 5 and then enters the first plane mirror 6; the first plane mirror 6 is placed at 45 degrees to the incident light, and is used for reflecting the seed light and transmitting the pump light; the seed light excited and reflected by the first plane mirror 6 passes through a first laser crystal 7 which is placed at 45 degrees and is used for providing gain for the seed light; the second plane mirror 8 receives the seed light from the first laser crystal 7 and is disposed at 45 ° to the incident light for reflecting the seed light and transmitting the pump light; the seed light reflected by the second plane mirror 8 passes through the second laser crystal 9 placed at 45 degrees and is incident on the third plane mirror 10; the third plane mirror 10 is also placed at 45 ° to the incident light, and is used to reflect the seed light and transmit the pump light; the seed light reflected by the third plane mirror 10 passes through the second focusing lens 11 to collimate the seed light; the collimated seed light is then passed through a third half-wave plate 12 to adjust the polarization direction of the seed light; finally, the seed light with the parallel polarization direction emitted by the three half wave plates is transmitted and output by the polarization beam splitter 3, and the seed light with the vertical polarization direction is reflected back to the annular cavity by the polarization beam splitter 3 for re-amplification.
Simultaneously, the first pump source 13 and the second pump source 15 respectively emit pump light relatively, and the focal spots of the first pump source 13 and the second pump source and the focal spot of the seed light transmitted in the annular light path are overlapped in the first laser crystal 7; the third pump source 17 and the fourth pump source 19 respectively emit pump light relatively, and the focal spots of the third pump source 17 and the fourth pump source are overlapped with the focal spot of the seed light transmitted in the annular light path in the second laser crystal 9; under continuous pumping of the first to fourth pump sources 19, the seed light obtains gain from the first laser crystal 7 and the second laser crystal 9, thereby being amplified.
The seed light with parallel polarization is transmitted through the polarization beam splitter 3, passes through the second half-wave plate 4, rotates 45 degrees in polarization direction, sequentially passes through the first laser crystal 9 and the second laser crystal 9 placed at 45 degrees, the polarization direction of the seed light is consistent with the polarization radiation directions of the first laser crystal 9 and the second laser crystal 9, gains are obtained in the first laser crystal 9 and the second laser crystal 9, and finally the components of the amplified seed light in the two directions of parallel polarization and vertical polarization can be adjusted through the third half-wave plate 12, so that the power of the seed light with parallel polarization transmitted by the polarization beam splitter 3 is adjusted. The vertically polarized seed light reflected back to the annular cavity by the polarization beam splitter 3 passes through the second half-wave plate 4, and the polarization direction is rotated by 135 degrees and is exactly consistent with the polarization radiation directions of the first laser crystal 9 and the second laser crystal 9, so that the seed light is amplified again.
In a specific implementation, the optical path between the first pump source 13 and the first plane mirror 6 is further provided with a first lens group 14, the optical path between the second pump source 15 and the second plane mirror 8 is further provided with a second lens group 16, the optical path between the third pump source 17 and the second plane mirror 8 is further provided with a third lens group 18, and the optical path between the fourth pump source 19 and the third plane mirror 10 is further provided with a fourth lens group 20.
In a specific implementation, the first pump source 13, the second pump source 15, the third pump source 17 and the fourth pump source 19 are all semiconductor diode pump sources, the wavelength of each semiconductor diode pump source is 808nm or 88Xnm, and the fiber cores of the output fibers used for outputting the first pump source 13, the second pump source 15, the third pump source 17 and the fourth pump source 19 are 200-400 um. The first laser crystal 7 and the second laser crystal 9 are laser crystals with linear polarization radiation property, and the model number is Nd: YVO4 or Nd: GVO4. The first laser crystal 7 and the second laser crystal 9 are placed at 45 degrees, the first laser crystal 7 and the second laser crystal 9 are plated with a pumping light antireflection film and a seed light antireflection film, and the first laser crystal 7 and the second laser crystal 9 are also connected with circulating cooling water.
In specific implementation, the first plane mirror 6 and the seed light incident beam and the seed light reflected beam in the corresponding light path are respectively at 45 degrees, the second plane mirror 8 and the seed light incident beam and the seed light reflected beam in the corresponding light path are respectively at 45 degrees, the third plane mirror 10 and the seed light incident beam and the seed light reflected beam in the corresponding light path are respectively at 45 degrees, and the first plane mirror 6, the second plane mirror 8 and the third plane mirror 10 are respectively coated with a pumping light antireflection film and a seed light high reflection film.
In a specific implementation, the first half-wave plate 2, the second half-wave plate 4, the third half-wave plate 12, the first focusing lens 5 and the second focusing lens 11 are all plated with seed light antireflection films.
The device of the invention can make the polarization direction of seed light consistent with the polarization radiation direction of the first or second laser crystal 9, whether the seed light passes through the first half wave plate 2 after being polarized in parallel or perpendicular, and the principle is as shown in fig. 3:
referring to fig. 3, pi polarization is the radiation polarization direction of the first or second laser crystal 9, P polarization is parallel polarization, and S polarization is perpendicular polarization, so long as 2θ=45°, that is, the first or second laser crystal 9 is placed at 45 °, it can be satisfied that the polarization direction of the seed light after passing through the second half wave plate 4 is always consistent with the polarization radiation direction of the first or second laser crystal 9.
In one embodiment of the present invention, when the seed light power injected from the seed source is 0.1mW and the repetition frequency is 100KHz, the pump power of the four semiconductor diodes is optimized, and the coincidence degree of the seed light spot and the pump light spot in the first and second laser crystals 9 is optimized to match with the light spot mode, the amplified seed light output power is 15.2W, and the amplification gain can reach 10 at most 5 。
And continuously monitoring and recording the amplified laser power for 6 hours, wherein the power fluctuation is less than 3%. The roundness of the amplified output light spot is 0.95.
The device has the advantages of high amplification gain, good output power stability and high output light spot quality, and the amplified picosecond laser pulse can be widely applied to the field of micromachining.
While particular embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that these are merely illustrative, and that many variations or modifications may be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined only by the appended claims.
Claims (10)
1. The utility model provides a ring cavity amplification device for picosecond seed laser pulse which characterized in that includes picosecond seed source, polarization beam splitter, first plane mirror, second plane mirror and third plane mirror, wherein:
the first plane mirror, the second plane mirror and the third plane mirror are sequentially and respectively arranged at four corners of the four-sided annular light path, and the picosecond seed source is positioned at the light beam injection end of the polarization beam splitter and used for injecting seed light into the polarization beam splitter;
a first laser crystal is arranged in a light path between the first plane mirror and the second plane mirror, and a second laser crystal is arranged in a light path between the second plane mirror and the third plane mirror;
the outer side of the first plane mirror and the outer side of the second plane mirror are symmetrically provided with a first pumping source and a second pumping source respectively along the straight line where the light beam between the first plane mirror and the second plane mirror is located, and focal spots of the first pumping source and the second pumping source are overlapped in the first laser crystal;
the outer side of the second plane mirror and the outer side of the third plane mirror are symmetrically provided with a third pump source and a fourth pump source respectively along a straight line where a light beam is positioned between the second plane mirror and the third plane mirror, and focal spots of the third pump source and the fourth pump source are overlapped in the second laser crystal;
the light path between the picosecond seed source and the polarization beam splitter is provided with a first half-wave plate, the light path between the polarization beam splitter and the first plane mirror is sequentially provided with a second half-wave plate and a first focusing lens along the light beam transmission direction, and the light path between the third plane mirror and the polarization beam splitter is sequentially provided with a second focusing lens and a third half-wave plate along the light beam transmission direction.
2. The annular cavity amplifying device for picosecond seed laser pulses according to claim 1, wherein a first lens group is further disposed on an optical path between the first pump source and the first plane mirror, a second lens group is further disposed on an optical path between the second pump source and the second plane mirror, a third lens group is further disposed on an optical path between the third pump source and the second plane mirror, and a fourth lens group is further disposed on an optical path between the fourth pump source and the third plane mirror.
3. The ring cavity amplification apparatus for picosecond seed laser pulse of claim 2, wherein the first pump source, the second pump source, the third pump source, and the fourth pump source are all semiconductor diode pump sources having a wavelength of 808nm or 88Xnm, and cores of output fibers for the first pump source, the second pump source, the third pump source, and the fourth pump source are 200-400 um.
4. The ring cavity amplifying device for picosecond seed laser pulses according to claim 3, wherein said first and second laser crystals are each a laser crystal having linear polarized radiation properties, and are each Nd: YV04 or Nd: GVO4.
5. The ring cavity amplification apparatus for picosecond seed laser pulses as recited in any one of claims 1 to 4, wherein said first laser crystal and said second laser crystal are each disposed at 45 °.
6. The annular chamber amplification apparatus for picosecond seed laser pulses as recited in claim 5, wherein the first and second laser crystals are each coated with a pump light anti-reflection film and a seed light anti-reflection film.
7. The annular chamber amplification apparatus for picosecond seed laser pulses as recited in claim 6, wherein the first laser crystal and the second laser crystal are each further connected with circulating cooling water.
8. The ring cavity amplifying device for picosecond seed laser pulses according to claim 7, wherein the first plane mirror is at an angle of 45 ° to the seed light incident beam and the seed light reflected beam in the corresponding optical path, the second plane mirror is at an angle of 45 ° to the seed light incident beam and the seed light reflected beam in the corresponding optical path, and the third plane mirror is at an angle of 45 ° to the seed light incident beam and the seed light reflected beam in the corresponding optical path, respectively.
9. The annular chamber amplification apparatus for picosecond seed laser pulses as recited in claim 8, wherein the first, second and third mirrors are each coated with a pump light antireflection film and a seed light highly reflective film.
10. The annular chamber amplification apparatus for picosecond seed laser pulses as recited in claim 9, wherein the first half-wave plate, the second half-wave plate, the third half-wave plate, the first focusing lens, and the second focusing lens are each coated with a seed light anti-reflection film.
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| CN110611240A (en) * | 2019-09-27 | 2019-12-24 | 中国科学院长春光学精密机械与物理研究所 | Controllable carbon dioxide laser amplification device of journey number |
| CN111884031B (en) * | 2020-07-07 | 2021-06-15 | 深圳市海目星激光智能装备股份有限公司 | Optimization method and optimization system for roundness of laser spot |
| CN118299914A (en) * | 2024-04-16 | 2024-07-05 | 北京云汉星驰激光技术有限公司 | Device and method for expanding ultrafast laser gain bandwidth |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051164A (en) * | 2006-04-06 | 2007-10-10 | 杨爱萍 | Circular chamber regulating Q optical fiber laser regenerating amplifier |
| CN101923265A (en) * | 2010-06-25 | 2010-12-22 | 中国船舶重工集团公司第七一七研究所 | Medium infrared parameter converter |
| CN102244346A (en) * | 2011-06-14 | 2011-11-16 | 华北电力大学（保定） | End-pumped laser utilizing half-wave plates |
| CN208316016U (en) * | 2018-05-25 | 2019-01-01 | 深圳市海目星激光智能装备股份有限公司 | Annular chamber amplifying device for picosecond seed laser pulse |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2429833A (en) * | 2005-09-02 | 2007-03-07 | Laser Quantum Ltd | Laser cavity |
| JP6261471B2 (en) * | 2014-07-31 | 2018-01-17 | 株式会社キーエンス | Laser processing equipment |
-
2018
- 2018-05-25 CN CN201810528271.2A patent/CN108512027B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051164A (en) * | 2006-04-06 | 2007-10-10 | 杨爱萍 | Circular chamber regulating Q optical fiber laser regenerating amplifier |
| CN101923265A (en) * | 2010-06-25 | 2010-12-22 | 中国船舶重工集团公司第七一七研究所 | Medium infrared parameter converter |
| CN102244346A (en) * | 2011-06-14 | 2011-11-16 | 华北电力大学（保定） | End-pumped laser utilizing half-wave plates |
| CN208316016U (en) * | 2018-05-25 | 2019-01-01 | 深圳市海目星激光智能装备股份有限公司 | Annular chamber amplifying device for picosecond seed laser pulse |
Non-Patent Citations (1)
| Title |
|---|
| LD泵浦皮秒激光脉冲再生放大器;李港;常亮;张丙元;陈檬;;红外与激光工程(第S1期);全文 * |
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