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CN108507678A - 一种等离激元多谐振机制增强的可调超光谱探测芯片 - Google Patents

一种等离激元多谐振机制增强的可调超光谱探测芯片 Download PDF

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CN108507678A
CN108507678A CN201810171259.0A CN201810171259A CN108507678A CN 108507678 A CN108507678 A CN 108507678A CN 201810171259 A CN201810171259 A CN 201810171259A CN 108507678 A CN108507678 A CN 108507678A
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张彤
苏丹
熊梦
单锋
张晓阳
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Southeast University
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Abstract

本发明公开了一种等离激元多谐振机制增强的可调超光谱探测芯片，该探测芯片由阵列化的金属纳米钉谐振腔探测单元所组成，每个探测单元(1)包括：底电极(2)、半导体材料层(3)、间隔层(4)、纳米钉阵列(5)、调控材料层(6)、顶电极(7)、外围调控信号(8)及驱动电路(9)；其位置关系由上至下依次为顶电极(7)、调控材料层(6)、纳米钉阵列(5)、间隔层(4)、半导体材料层(3)、底电极(2)，其中，纳米钉阵列(5)填充于调控材料层(6)内部，外围调控信号(8)及驱动电路(9)与调控材料层(6)两侧连接。实现探测器材料的量子效率显著提升，光谱分辨率优于1纳米，实现突破半导体截止波长的光探测。

Description

一种等离激元多谐振机制增强的可调超光谱探测芯片
技术领域
本发明属于红外探测器技术、金属纳米材料等领域，具体是一种等离激元多谐振机制增强的可调超光谱探测芯片。
背景技术
超光谱成像探测技术利用具有一定光谱分辨率的超光谱图像进行目标探测，相比传统的单一宽波段光电探测技术，它要求结合成像技术和光谱测量技术获取二维空间信息和随波长分布的光谱辐射信息。只有对目标光谱信息和目标空间影像实现高精度的分辨，才能够提高目标探测的准确性，扩展传统探测技术的功能，在目标材质识别、异常目标检测、伪装目标辨识和复杂背景抑制等目标探测技术领域满足应用需求。然而，现有的传统红外光电探测器的探测波长受半导体材料带隙的限制，无法探测到更长的波段，而且光电探测器通常采用棱镜、光栅或分布式布拉格反射镜等分立器件对红外辐射进行分光，以实现红外多光谱成像，但难以实现芯片化与集成化；另外现有的多光谱探测技术采用的工作波段较少，一般为10个至20个，光谱分辨率Δλ/λ为0.1左右，即光谱分辨率低。
本发明利用等离激元纳米颗粒的局域表面等离激元效应，针对现有红外光电探测器量子效率低、光谱分辨率低、采用分立器件分光无法实现集成化与芯片化等瓶颈问题，并结合新机理、新技术提出了一种等离激元多谐振机制增强的可调超光谱探测芯片，同时利用表面等离激元光致热载流子可以打破传统半导体探测器的探测波长受其带隙限制的瓶颈，拓展其探测波长范围；探测芯片具有探测波段可拓展、量子效率高、光谱分辨率高、芯片化、集成化及低成本等优点，可广泛应用于军事侦察、目标/背景探测、地雷探测等领域。
发明内容
技术问题：本发明的目的是解决已有红外光电探测器的探测波长受半导体带隙限制，探测范围有限、量子效率低、光谱分辨率低、采用分立器件分光难以集成化和大规模芯片化等技术问题，提出一种等离激元多谐振机制增强的可调超光谱探测芯片，利用金属纳米钉与半导体构成的异质结，基于等离激元谐振增强的热载流子效应实现突破半导体截止波长的光探测；利用金属纳米钉横向与纵向两种谐振模式竞争导致的光吸收谱线的窄化，当金属纳米钉加入到红外光电探测器中后，可提高入射到探测材料局部的光强密度，实现探测器材料的量子效率显著增加；利用等离激元纳米颗粒的表面等离激元共振与周围的介质折射率相关，在调控材料层内部填充纳米钉，通过外围调控信号改变调控材料层的分布状态，改变纳米钉周围介质的折射率，实现探测器响应波段谱峰的实时调控，光谱分辨率优于1纳米。该探测芯片具有探测波长可拓宽、量子效率高、光谱分辨率高、可集成化、成本低、制备工艺简单等优点，并能制备成阵列化的超光谱探测器。
技术方案：为解决上述技术问题，本发明提出一种等离激元多谐振机制增强的可调超光谱探测芯片，该探测芯片由阵列化的金属纳米钉谐振腔探测单元所组成，每个探测单元包括：底电极、半导体材料层、间隔层、纳米钉阵列、调控材料层、顶电极、外围调控信号及驱动电路；其位置关系由上至下依次为顶电极、调控材料层、纳米钉阵列、间隔层、半导体材料层、底电极，其中，纳米钉阵列填充于调控材料层内部，外围调控信号及驱动电路与调控材料层两侧连接。
其中，
所述探测单元的尺寸大小为200纳米至4微米，相邻探测单元之间的距离为500纳米至2微米,所述探测单元阵列为k×t二维面阵，其中k和t取值为2到10000，构成的探测芯片尺寸大小在100微米至5000微米之间。
所述底电极为多层电极，每层电极之间相互绝缘，每层电极可配合顶电极独立读出电信号。
所述底电极与顶电极为透明材料，厚度为50纳米到300纳米；底电极与顶电极供选材料包括金、银、铜、铝、钛、镍金属电极材料或氧化铟锡ITO、掺铝氧化锌AZO、掺氟氧化锡FTO、石墨烯半导体透明导电材料。所述底电极的层数为m+n,其中m取值为探测单元中纳米钉的排布方向取向数，n取值为同一探测单元中纳米钉的尺寸大小种类数。
所述半导体材料层的供选材料包括n型硅、n型砷化镓、磷化铟InP、锑化镓GaSb或碲锌镉CdZnTe，厚度为1微米至500微米。
所述间隔层的材料包括二氧化硅或氧化铝。
所述纳米钉阵列由具有多谐振增强效应的表面等离激元纳米钉结构按周期排布构成，具有多谐振增强效应的表面等离激元纳米钉包括两个部分：纳米三角板和纳米棒,所述具有多谐振增强效应的表面等离激元纳米钉同时具有红外超窄带吸收、强近程介电敏感性和强偏振选择性特点。
所述纳米钉阵列包含2到10个多谐振增强效应的表面等离激元纳米钉，纳米钉的尺寸在20纳米到1000纳米之间，纳米钉间距为10纳米到1000纳米之间。
所述多谐振增强效应的表面等离激元纳米钉的供选材料包括金、银、铜、钯、铑或半导体合金表面等离激元材料；纳米钉结构在同一波长分别对应由纳米三角板形成的表面等离激元共振峰和纳米棒形成的等离激元法布里-珀罗谐振峰，即存在表面等离激元多谐振增强效应。
所述调控材料层可为电光材料、声光材料或压光材料或折射率可调控的材料。
所述探测芯片可实现超光谱探测、偏振探测、突破衍射极限探测多功能的单片集成，器件的驱动方法如下：当光照射在探测单元上时，利用半导体材料层和纳米钉阵列之间形成的异质结，基于表面等离激元光致热载流子效应，载流子越过肖特基势垒，形成光电流。通过驱动电路在调控材料层两侧施加时间周期为5毫秒-60秒的外围调控信号，改变调控材料层的分布状态，进而改变纳米钉阵列周围的介质折射率，实现纳米钉对光的超窄带吸收的中心波长扫描，在同一周期内每隔0.01毫秒-5毫秒采集探测器阵列的顶电极与底电极输出信号进行成像，实现超光谱成像的功能；利用具有多谐振增强效应的表面等离激元纳米钉对入射光方向的偏振选择性，每个探测单元中有2至8种不同排布方向、2至4种不同尺寸大小的纳米钉结构，顶电极与排布方向相同的纳米钉结构对应的底电极相连，实现不同偏振光响应电流的独立读出；顶电极与尺寸大小相同的纳米钉结构对应的底电极相连，实现不同响应波段的拓宽；另外，所述多谐振增强效应的表面等离激元纳米钉的尺寸均小于探测波长，可实现突破衍射极限的探测功能。
有益效果：本发明与现有的技术相比具有以下的优点：
1、提出一种等离激元多谐振机制增强的可调超光谱探测芯片，利用具有多谐振增强效应的表面等离激元纳米钉结构的超窄带红外光吸收、偏振选择、亚波长光调控特性，同时实现了超光谱探测、偏振探测、突破衍射极限探测多功能的单片集成，颠覆了传统红外光电探测器采用分立器件进行分光、偏振选择，无法实现高性能探测系统集成化的问题。
2、提出一种等离激元多谐振机制增强的可调超光谱探测芯片，利用具有多谐振增强效应的表面等离激元纳米钉结构的超窄带强吸收及其谐振峰对近程介电环境的超强敏感性，实现红外波段光致热载流子机制的超光谱探测，可突破现有的红外光电探测芯片光谱分辨率低的问题，光谱分辨率优于1纳米。
3、提出一种等离激元多谐振机制增强的可调超光谱探测芯片，利用纳米钉横向和纵向两种谐振模式的竞争机制，实现红外探测芯片光吸收谱线大幅窄化，当红外光电探测器中加入金属纳米钉等离激元多谐振结构后，入射到探测材料的局部光强密度可提升2-4个数量级，显著提高探测器的量子效率。
附图说明
图1是一种等离激元多谐振机制增强的可调超光谱探测芯片的结构示意图；
图2是一种等离激元多谐振机制增强的可调超光谱探测芯片的探测单元1结构示意图，其中，图中有：底电极2、半导体材料层3、间隔层4、纳米钉阵列5、调控材料层6、顶电极7、外围调控信号8及驱动电路9。
图3是一种等离激元多谐振机制增强的可调超光谱探测芯片的探测单元1俯视示意图，探测单元1内的纳米钉阵列5中有2种排布方向、2种尺寸大小的具有多谐振增强效应的表面等离激元纳米钉结构51。图中有：调控材料层6、纳米钉阵列5、具有多谐振增强效应的表面等离激元纳米钉结构51。
图4是纳米钉51结构示意图，图中具有多谐振增强效应的表面等离激元纳米钉结构51包括两个部分：纳米三角板52和纳米棒53。纳米三角板52和纳米棒53可以是同种金属纳米材料，也可为两种不同的金属纳米材料。
图5是具有多谐振增强效应的表面等离激元纳米钉51结构的偏振选择性示意图。
图6是具有多谐振增强效应的表面等离激元纳米钉51结构的归一化电场强度与入射波长之间的关系示意图。
具体实施方式
本发明的一种等离激元多谐振机制增强的可调超光谱探测芯片由阵列化的金属纳米钉谐振腔探测单元所组成，每个探测单元1包括：底电极2、半导体材料层3、间隔层4、纳米钉阵列5、调控材料层6、顶电极7、外围调控信号8及驱动电路9。其位置关系由上至下依次为顶电极7、调控材料层6、纳米钉阵列5、间隔层4、半导体材料层3、底电极2、外围调控信号8及驱动电路9。其中，纳米钉阵列5填充于调控材料层6内部。
所述纳米钉阵列5由多谐振增强效应的表面等离激元纳米钉51按周期排布构成，多谐振增强效应的表面等离激元纳米钉51包括两个部分：纳米三角板52和纳米棒53,所述多谐振增强效应的表面等离激元纳米钉51同时具有红外超窄带吸收、强近程介电敏感性和强偏振选择性等特点，所述驱动电路9与调控材料层6的两侧相连，所述底电极2为多层电极，每层电极之间相互绝缘，每层电极可配合顶电极7独立读出电信号。
所述探测芯片可实现超光谱探测、偏振探测、突破衍射极限探测多功能的单片集成，器件的驱动方法如下：当光照射在探测单元1上时，利用半导体材料层3和纳米钉阵列5之间形成的异质结，基于表面等离激元光致热载流子效应，载流子越过肖特基势垒，形成了光电流。通过驱动电路9在调控材料层6两侧施加时间周期为5毫秒至60秒的外围调控信号8，改变调控材料层6的分布状态，进而改变纳米钉阵列5周围的介质折射率，实现纳米钉对光的超窄带吸收的中心波长扫描，在同一周期内每隔0.01毫秒至5毫秒采集探测器阵列的顶电极7与底电极2输出信号进行成像，实现超光谱成像的功能；利用纳米钉51对入射光方向的偏振选择性，每个探测单元中有2至8种不同排布方向、2至4种不同尺寸大小的纳米钉结构，顶电极7与排布方向相同的纳米钉结构对应的底电极相连，实现不同偏振光响应电流的独立读出；顶电极7与尺寸大小相同的纳米钉结构对应的底电极2相连，实现不同响应波段的拓宽；另外，所述纳米钉51的尺寸均小于探测波长，可实现突破衍射极限的探测功能。
本发明的一种等离激元多谐振机制增强的可调超光谱探测芯片，
第一、利用同时具有横向与纵向两种等离激元谐振竞争效应的表面等离激元纳米钉结构的红外超窄带吸收，将入射到探测材料局部的光强密度提高2至4个数量级，进而利用珀赛尔效应(探测材料量子效率增强的幅度与局部光强密度的平方成正比)显著增加探测器材料的量子效率；考虑到非线性效应，当光强密度较大时，吸收系数可能随着光强的增加而减小，出现光吸收的饱和现象。此时，具有高Q值(Q值反映的是谐振腔内部存储能量的能力。)的表面等离激元纳米钉使入射光更多地局域在纳米颗粒附近，当其靠近探测器吸收层时，有效增强探测器材料的量子效率；
第二、金属纳米颗粒的局域表面等离激元共振的吸收峰对其周围介质折射率的变化非常敏感，且纳米颗粒的形貌越长、棱角越尖，对介质折射率变化的响应灵敏度越大。当红外光电探测器中加入金属纳米材料后，由于金属纳米材料的光致发光增强效应与其对折射率变化的高灵敏度响应，将更容易通过发光光谱和颜色的变化反映出折射率的变化；
第三、利用由金属构成的纳米钉与半导体构成的异质结所特有的表面等离激元光致热载流子效应，可以突破传统半导体探测器光子能量探测极限，拓展传统半导体探测器的探测波长范围；
第四、利用纳米钉对入射光方向具有偏振选择性，每个探测单元中有2至8种不同排布方向、2至4种尺寸大小不同的纳米钉结构，排布方向相同的纳米钉结构对应的顶电极、底电极相连，实现不同偏振光响应电流的独立读出；尺寸大小一样的纳米钉结构对应的顶电极、底电极相连，实现不同响应波段的拓宽。
下面通过具体实施例和对比例进一步说明本发明：
实施例：
等离激元多谐振机制增强的可调超光谱探测芯片的探测单元结构如图1所示，其中，铝电极2、n型硅3、二氧化硅层4、银纳米钉阵列5、电光调控材料层6、氧化铟锡电极7、周期性电压调控信号8、驱动电路9。其中，银纳米钉阵列5填充于电光调控材料层6内部。银纳米钉阵列5由银纳米钉51的周期性排布构成，银纳米钉51包括两个部分：银纳米三角板52和银纳米棒53,驱动电路9与电光调控材料层6的两侧相连。
当光照射在探测芯片上时，利用n型硅3和银纳米钉阵列5之间形成的异质结，基于表面等离激元光致热载流子效应，载流子越过肖特基势垒，形成光电流。通过驱动电路9在电光调控材料层6两侧施加时间周期为50毫秒的电压调控信号8，改变电光调控材料层6的分布状态，进而改变银纳米钉阵列5周围的介质折射率，实现银纳米钉对光的超窄带吸收的中心波长扫描，在同一周期内每隔0.5毫秒采集探测器阵列的氧化铟锡电极7与铝电极2输出信号进行成像，实现超光谱成像的功能；利用银纳米钉51对入射光方向的偏振选择性，每个探测单元中有2种不同排布方向、2种尺寸大小不一的纳米钉结构，氧化铟锡电极7与排布方向相同的纳米钉结构对应的铝电极2相连，实现不同偏振光响应电流的独立读出，氧化铟锡电极7与尺寸大小相同的纳米钉结构对应的铝电极2相连，实现不同响应波段的拓宽；另外，银纳米钉51的尺寸均小于探测波长，可实现突破衍射极限的探测功能。
以上所述仅为本发明的较佳实施方式，本发明的保护范围并不以上述实施方式为限，但凡本领域普通技术人员根据本发明所揭示内容所作的等效修饰或变化，皆应纳入权利要求书中记载的保护范围内。

Claims (10)

1.一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于该探测芯片由阵列化的金属纳米钉谐振腔探测单元所组成，每个探测单元(1)包括：底电极(2)、半导体材料层(3)、间隔层(4)、纳米钉阵列(5)、调控材料层(6)、顶电极(7)、外围调控信号(8)及驱动电路(9)；其位置关系由上至下依次为顶电极(7)、调控材料层(6)、纳米钉阵列(5)、间隔层(4)、半导体材料层(3)、底电极(2)，其中，纳米钉阵列(5)填充于调控材料层(6)内部，外围调控信号(8)及驱动电路(9)与调控材料层(6)两侧连接。
2.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述探测单元(1)的尺寸大小为200纳米至4微米，相邻探测单元之间的距离为500纳米至2微米,所述探测单元(1)阵列为k×t二维面阵，其中k和t取值为2到10000，构成的探测芯片尺寸大小在100微米至5000微米之间。
3.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述底电极(2)为多层电极，每层电极之间相互绝缘，每层电极可配合顶电极(7)独立读出电信号。
4.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述底电极(2)与顶电极(7)为透明材料，厚度为50纳米到300纳米；底电极(2)与顶电极(7)供选材料包括金、银、铜、铝、钛、镍金属电极材料或氧化铟锡ITO、掺铝氧化锌AZO、掺氟氧化锡FTO、石墨烯半导体透明导电材料；所述底电极(2)的层数为m+n,其中m取值为探测单元(1)中纳米钉的排布方向取向数，n取值为同一探测单元(1)中纳米钉的尺寸大小种类数。
5.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述半导体材料层(3)的供选材料包括n型硅、n型砷化镓、磷化铟InP、锑化镓GaSb或碲锌镉CdZnTe，厚度为1微米至500微米。
6.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述间隔层(4)的材料包括二氧化硅或氧化铝。
7.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述纳米钉阵列(5)由具有多谐振增强效应的表面等离激元纳米钉(51)结构按周期排布构成，具有多谐振增强效应的表面等离激元纳米钉(51)包括两个部分：纳米三角板(52)和纳米棒(53),所述具有多谐振增强效应的表面等离激元纳米钉(51)同时具有红外超窄带吸收、强近程介电敏感性和强偏振选择性特点。
8.根据权利要求7所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述纳米钉阵列(5)包含2到10个多谐振增强效应的表面等离激元纳米钉(51)，纳米钉的尺寸在20纳米到1000纳米之间，纳米钉间距为10纳米到1000纳米之间。
9.根据权利要求7或8所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述多谐振增强效应的表面等离激元纳米钉(51)的供选材料包括金、银、铜、钯、铑或半导体合金表面等离激元材料；纳米钉结构在同一波长分别对应由纳米三角板(52)形成的表面等离激元共振峰和纳米棒(53)形成的等离激元法布里-珀罗谐振峰，即存在表面等离激元多谐振增强效应。
10.根据权利要求1所述的一种等离激元多谐振机制增强的可调超光谱探测芯片，其特征在于，所述调控材料层(6)为电光材料、声光材料或压光材料或折射率可调控的材料。
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