CN108493118B - Lead frame process method with side tin-climbing pin - Google Patents
Lead frame process method with side tin-climbing pin Download PDFInfo
- Publication number
- CN108493118B CN108493118B CN201810450061.6A CN201810450061A CN108493118B CN 108493118 B CN108493118 B CN 108493118B CN 201810450061 A CN201810450061 A CN 201810450061A CN 108493118 B CN108493118 B CN 108493118B
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- Prior art keywords
- photosensitive
- film
- cold
- rolled steel
- lead frame
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000010960 cold rolled steel Substances 0.000 claims abstract description 18
- 238000009713 electroplating Methods 0.000 claims abstract description 16
- 238000007747 plating Methods 0.000 claims abstract description 12
- 239000007787 solid Substances 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 6
- 239000003755 preservative agent Substances 0.000 claims description 6
- 230000002335 preservative effect Effects 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 230000009194 climbing Effects 0.000 description 8
- 239000005022 packaging material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002493 climbing effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to a lead frame process method with a side tin-climbing pin, which comprises the following steps: firstly, pre-plating copper on the surface of a cold-rolled steel plate; step two, covering a photosensitive film; exposing and developing to expose the area to be electroplated; electroplating a first metal circuit pattern; step five, covering a photosensitive film; exposing and developing to expose the area to be electroplated; step seven, electroplating a second metal circuit pattern; step eight, removing the photosensitive film; step nine, printing a wet film on the surface of the cold-rolled steel plate, and baking the wet film; step ten, exposure and development are carried out, and the wet film of the area which does not need to be protected is removed; step eleven, encapsulating and curing; step twelve, thinning the thickness of the frame; step thirteen, covering a photosensitive film; fourteen, exposing and developing to expose the area to be etched; fifteen, etching a window by using a cold-rolled steel plate; sixthly, removing the photosensitive film and the solid wet film, and plating the OSP. The invention only controls the tolerance of the development of the photosensitive wet film, and the pin welding capability is strong.
Description
Technical Field
The invention relates to a lead frame process method with a side tin-climbing pin, and belongs to the technical field of semiconductor packaging.
Background
The process method of the traditional lead frame for tin climbing on the side surface of the pin comprises the following steps: electroplating a first metal layer on the front surface of the metal substrate, electroplating a base island and a pin on the surface of the first metal layer, encapsulating the front surface of the metal substrate, grinding to expose the base island and the pin, performing half-etching on the front surface of the pin to form a groove, and finally performing full-etching on the back surface of the metal substrate.
The lead frame (as shown in fig. 1) formed by etching and having tin-plated side surfaces of the leads has the following disadvantages:
1) the etching tolerance is relatively large, the etching tolerance is about +/-50um, so that the precision of forming the grooves is poor, the etching depth of each groove is inconsistent with the etching width, the pattern is irregular (as shown in figure 2), and the tin climbing capacity of each pin is different. If the etching width is too large, the pin size is too small to reach the standard; if the width etching is too small, the tin climbing space is insufficient, tin climbing can not be smoothly performed, and the welding performance of the pin is further influenced; if the etching depth is too deep, other circuits are etched to cause open circuit; if the etching depth is too small, the tin climbing height is insufficient, the tin climbing height required by a customer cannot be reached, and the welding performance of the pin is affected;
2) and the etching tolerance is too large, so that the tin climbing on the side surface of the pin cannot be manufactured on an ultrathin frame product by using an etching process.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a lead frame process method with a side tin-climbing pin aiming at the prior art, only the developing tolerance of a photosensitive film is controlled, the graph is easy and regular to control, the graph precision is higher, the tin-climbing capability of each pin is favorably controlled, and the welding performance of the pin is improved.
The technical scheme adopted by the invention for solving the problems is as follows: a lead frame process method with a side tin-climbing pin comprises the following steps:
firstly, pre-plating copper on the surface of a cold-rolled steel plate;
covering a photosensitive film, wherein the photosensitive film can be a photosensitive dry film or a photosensitive wet film;
exposing and developing to expose the area needing electroplating;
step four, forming a first metal circuit pattern by one-time electroplating;
covering a photosensitive film, wherein the photosensitive dry film can be a photosensitive wet film;
exposing and developing to expose the area needing electroplating;
step seven, forming a second metal circuit pattern by secondary electroplating, wherein the second metal circuit layer comprises a pin and a base island;
step eight, removing the photosensitive film;
ninth, printing a photosensitive wet film on the surface and the patterned surface of the cold-rolled steel plate, and baking to convert the photosensitive wet film into a solid state;
step ten, exposure and development are carried out, and the solid photosensitive wet film of the area which does not need to be protected is removed;
step eleven, encapsulating by using a plastic packaging material, and curing;
step twelve, thinning;
step thirteen, covering a photosensitive film, wherein the photosensitive dry film can be a photosensitive wet film;
fourteen, exposing and developing to expose the area to be etched;
fifteen, etching a window by using a cold-rolled steel plate to expose the first metal circuit pattern;
sixthly, removing the photosensitive dry film and the solid photosensitive wet film, and plating the OSP.
Compared with the prior art, the invention has the advantages that:
1. according to the process, only the tolerance of developing the photosensitive wet film is controlled, and compared with an etching groove process, the process pattern precision is higher; the etching tolerance is about +/-50um, while the wet film developing tolerance of the invention can reach about +/-5um, which is beneficial to controlling the graph and tin-climbing capability of each pin and avoiding the problems of poor welding and the like.
2. The method has the advantages of high process precision and strong process applicability, and the ultrathin frame can be used for manufacturing the tin climbing on the side surface of the pin.
Drawings
Fig. 1 is a schematic diagram of a conventional lead frame structure with a lead side for tin-climbing.
Fig. 2 is a schematic diagram of an irregular etching pattern of a conventional lead frame with a lead side having a tin-plated pattern.
Fig. 3 to 18 are schematic flow charts of a lead frame process method with a side tin-climbing pin according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
In this embodiment, a process method for a lead frame with a side tin-climbing pin includes the following steps:
1. SPCC (cold rolled steel sheet) (No. 1) surface pre-plated with copper (No. 2), as shown in fig. 3;
2. the surface of the cold-rolled steel plate is covered with a photosensitive film (serial number 3), and the photosensitive film can be a photosensitive dry film or a photosensitive wet film, as shown in figure 4;
3. exposing and developing the photosensitive film, and windowing (serial number 4) to expose the area to be electroplated, as shown in fig. 5;
4. performing primary electroplating on the windowing region formed in the previous step to form a first metal circuit pattern (serial number 5), as shown in fig. 6;
5. covering a photosensitive film (number 6), wherein the photosensitive film can be a photosensitive dry film or a photosensitive wet film, as shown in FIG. 7;
6. exposing and developing the photosensitive film, and windowing (serial number 7) to expose the area to be electroplated, as shown in fig. 8;
7. performing secondary electroplating on the windowing region formed in the previous step to form a second metal circuit pattern, wherein the second metal circuit layer comprises a pin (serial number 8) and a base island (serial number 9), as shown in fig. 9;
8. removing all the photosensitive film, as shown in fig. 10;
9. a photosensitive wet film (serial number 10) is printed on the surface of the SPCC (cold-rolled steel plate), and the wet film is baked to be converted into a solid state (the photosensitive dry film is not used, the bonding degree of the photosensitive dry film is poor, and air exists between the film and the surface of the cold-rolled steel plate to influence subsequent manufacturing), as shown in FIG. 11;
10. exposing and developing the photosensitive wet film, windowing, and removing the solid photosensitive wet film in the area which does not need to be protected, as shown in figure 12;
11. encapsulating, namely encapsulating the circuit layer by filling a plastic packaging material (serial number 11), and curing the plastic packaging material, as shown in fig. 13;
12. thinning, using a thinning machine to polish the encapsulated area until the encapsulated area is polished to the required thickness, as shown in fig. 14;
13. covering a photosensitive film (number 12), which may be a photosensitive dry film or a photosensitive wet film, as shown in fig. 15;
14. the photosensitive film is exposed, developed, and windowed (number 13) to expose the areas to be etched, as shown in fig. 16;
15. a cold-rolled steel plate etching window (No. 14) exposing the first metal wiring pattern, as shown in fig. 17;
16. removing the photosensitive dry film and the solid photosensitive wet film, plating an Organic Solderability Preservative (OSP) film (serial number 15), soaking the lead frame in an OSP solution, plating an OSP material on the copper surface to prevent oxidation, and performing other surface treatments, such as nickel-gold electroplating and nickel-palladium-gold electroplating, as shown in FIG. 18.
In order to facilitate the tin climbing effect of the pin when the PCB is subsequently mounted, a layer of tin can be plated on the pin.
The lead frame with the side tin-climbing pin formed by the process method can be suitable for products in different forms such as single chips, multiple chips, normal chips, flip chips and the like.
In addition to the above embodiments, the present invention also includes other embodiments, and any technical solutions formed by equivalent transformation or equivalent replacement should fall within the scope of the claims of the present invention.
Claims (4)
1. A lead frame process method with a side tin-climbing pin is characterized by comprising the following steps:
firstly, pre-plating copper on the surface of a cold-rolled steel plate;
covering the front surface and the back surface of the cold-rolled steel plate with the surface pre-plated with copper with first photosensitive films;
exposing and developing to expose the area needing electroplating;
step four, forming a first metal circuit pattern by one-time electroplating;
covering a second photosensitive film on the surface of the first metal circuit layer;
exposing and developing to expose the area needing electroplating;
step seven, forming a second metal circuit pattern by secondary electroplating, wherein the second metal circuit layer comprises a pin and a base island;
eighthly, removing the first photosensitive film and the second photosensitive film;
printing wet films on the front side and the back side of the cold-rolled steel plate, and baking to enable the wet films to be converted into solid;
step ten, exposing and developing, and removing the solid wet film in the area which does not need to be protected;
step eleven, performing encapsulation and curing operation on the back surface of the cold-rolled steel sheet;
step twelve, thinning the frame thickness of the back of the encapsulated and cured cold-rolled steel sheet;
thirteen, covering a third photosensitive film on the front surface and the back surface of the cold-rolled steel plate;
fourteen, exposing and developing to expose the area to be etched;
fifteen, etching a window by using a cold-rolled steel plate to expose the first metal circuit pattern;
sixthly, removing the photosensitive film and the solid wet film, and then plating an Organic Solderability Preservative (OSP).
2. The process method of the lead frame with the side tin-climbing pin according to claim 1, characterized in that: and the photosensitive film in the second step, the fifth step and the thirteenth step is a photosensitive dry film or a photosensitive wet film.
3. The process method of the lead frame with the side tin-climbing pin according to claim 1, characterized in that: in the sixteenth step, the Organic Solderability Preservative (OSP) is plated by soaking the lead frame in an Organic Solderability Preservative (OSP) solution and plating an Organic Solderability Preservative (OSP) layer on the exposed metal surface of the lead frame.
4. The process method of the lead frame with the side tin-climbing pin according to claim 1, characterized in that: in the sixteenth step, the Organic Solderability Preservative (OSP) plating can be replaced by nickel gold plating or nickel palladium gold plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810450061.6A CN108493118B (en) | 2018-05-11 | 2018-05-11 | Lead frame process method with side tin-climbing pin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810450061.6A CN108493118B (en) | 2018-05-11 | 2018-05-11 | Lead frame process method with side tin-climbing pin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108493118A CN108493118A (en) | 2018-09-04 |
| CN108493118B true CN108493118B (en) | 2020-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810450061.6A Active CN108493118B (en) | 2018-05-11 | 2018-05-11 | Lead frame process method with side tin-climbing pin |
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| Country | Link |
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| CN (1) | CN108493118B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110896064A (en) * | 2019-11-16 | 2020-03-20 | 江苏长电科技股份有限公司 | Semi-etched lead frame structure and manufacturing method thereof |
| CN113643990B (en) * | 2021-06-29 | 2024-01-16 | 华宇华源电子科技（深圳）有限公司 | Board-level packaging method and structure for improving device strength |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08340069A (en) * | 1995-06-13 | 1996-12-24 | Hitachi Cable Ltd | Lead frame and semiconductor device using it |
| US5612514A (en) * | 1993-09-30 | 1997-03-18 | Atmel Corporation | Tab test device for area array interconnected chips |
| CN104009006A (en) * | 2013-02-27 | 2014-08-27 | 矽品精密工业股份有限公司 | Package substrate and method for fabricating the same, and semiconductor package and method for fabricating the same |
| CN105932006A (en) * | 2016-06-23 | 2016-09-07 | 江阴芯智联电子科技有限公司 | Wettable lead frame structure with pre-encapsulated side and manufacturing method of wettable lead frame structure |
| CN206584921U (en) * | 2017-03-06 | 2017-10-24 | 江阴芯智联电子科技有限公司 | The pre-packaged wettable lead frame structure in many sides |
-
2018
- 2018-05-11 CN CN201810450061.6A patent/CN108493118B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612514A (en) * | 1993-09-30 | 1997-03-18 | Atmel Corporation | Tab test device for area array interconnected chips |
| JPH08340069A (en) * | 1995-06-13 | 1996-12-24 | Hitachi Cable Ltd | Lead frame and semiconductor device using it |
| CN104009006A (en) * | 2013-02-27 | 2014-08-27 | 矽品精密工业股份有限公司 | Package substrate and method for fabricating the same, and semiconductor package and method for fabricating the same |
| CN105932006A (en) * | 2016-06-23 | 2016-09-07 | 江阴芯智联电子科技有限公司 | Wettable lead frame structure with pre-encapsulated side and manufacturing method of wettable lead frame structure |
| CN206584921U (en) * | 2017-03-06 | 2017-10-24 | 江阴芯智联电子科技有限公司 | The pre-packaged wettable lead frame structure in many sides |
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| Publication number | Publication date |
|---|---|
| CN108493118A (en) | 2018-09-04 |
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Address after: 214400 No. 78 Changshan Road, Jiangyin High-tech Zone, Jiangyin City, Wuxi City, Jiangsu Province Applicant after: Jiangsu Changjiang Electronics Technology Co., Ltd. Address before: 214400 No. 78 Changshan Road, Chengjiang Town, Jiangyin City, Wuxi City, Jiangsu Province Applicant before: Jiangsu Changjiang Electronics Technology Co., Ltd. |
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