CN108494380A - SAW filter materials and preparation method thereof - Google Patents
SAW filter materials and preparation method thereof Download PDFInfo
- Publication number
- CN108494380A CN108494380A CN201810220554.0A CN201810220554A CN108494380A CN 108494380 A CN108494380 A CN 108494380A CN 201810220554 A CN201810220554 A CN 201810220554A CN 108494380 A CN108494380 A CN 108494380A
- Authority
- CN
- China
- Prior art keywords
- film
- silica
- base
- piezoelectric monocrystal
- saw filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 123
- 238000002360 preparation method Methods 0.000 title abstract description 3
- 239000010408 film Substances 0.000 claims abstract description 271
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 125
- 239000010703 silicon Substances 0.000 claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 125
- 239000010409 thin film Substances 0.000 claims abstract description 13
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000206 photolithography Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 10
- 230000000694 effects Effects 0.000 abstract description 10
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 10
- 230000005764 inhibitory process Effects 0.000 abstract description 8
- 230000009471 action Effects 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000002178 crystalline material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000005411 Van der Waals force Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003701 mechanical milling Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of SAW filter materials and preparation method thereof, belong to SAW filter materials field.The SAW filter materials include silicon base, the silica-base film on silicon base and the piezoelectric monocrystal film on silica-base film；Piezoelectric monocrystal film is lithium tantalate piezoelectric monocrystal film or lithium niobate piezoelectric monocrystal thin films；Being made on the bonding face of silica-base film or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base has groove structure array；The bonding face of silica-base film, the bonding face of piezoelectric monocrystal film, silicon base bonding face be burnishing surface；It solves existing multilayer bonding piezoelectric material body wave action surface acoustic wave, leads to the problem of the high-end inhibition difference of SAW filter；Reach the application range for expanding multilayer bonding piezoelectric material, ensures the effect of the performance of SAW filter.
Description
Technical field
The present embodiments relate to SAW filter materials field, more particularly to a kind of SAW filter materials and its making side
Method.
Background technology
Surface acoustic wave is to generate and propagate on piezoelectric substrate materials surface, and amplitude increases with the depth for going deep into substrate material
And the elastic wave of rapid reduction.The basic structure of SAW filter is on the substrate material burnishing surface with piezoelectric property
Two acoustic-electrical transducers are made, operation principle is that electric signal is become acoustical signal by input energy converter, and acoustical signal is passed along plane of crystal
Defeated, the acoustical signal received is become electric signal output by output transducer again.
Lithium niobate and lithium tantalate in piezoelectric material have the larger coefficient of coup, are usually used in making SAW filter,
But the temperature coefficient of lithium niobate and lithium tantalate is sent to so that manufactured SAW filter at different temperatures frequency cheaply compared with
Greatly, the performance of surface acoustic wave and application are affected.Influence caused by order to overcome temperature coefficient, uses temperature in the related technology
The smaller silicon chip of coefficient and the bonding of lithium niobate or lithium tantalate, to inhibit influence of the temperature to lithium niobate or lithium tantalate material.
However, there is boundary in actual use in the multilayer bonding piezoelectric material bonded together to form by silicon chip and surface layer piezoelectric material
The interference of face bulk wave, the high-end inhibition of filter are deteriorated.
Invention content
In order to solve problems in the prior art, an embodiment of the present invention provides a kind of SAW filter materials and its making sides
Method.The technical solution is as follows：
In a first aspect, provide a kind of SAW filter materials, including silicon base, the silica-base film on silicon base, with
And the piezoelectric monocrystal film on silica-base film；
Piezoelectric monocrystal film is lithium tantalate piezoelectric monocrystal film or lithium niobate piezoelectric monocrystal thin films；
Being made on the bonding face of silica-base film or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base has groove knot
Structure array；
The bonding face of silica-base film, the bonding face of piezoelectric monocrystal film, silicon base bonding face be burnishing surface.
Optionally, groove structure array is produced on the bonding face of silica-base film；
Silica-base film making has the one side of groove structure array to be bonded with piezoelectric monocrystal film, and silica-base film is grown in silicon substrate
On bottom.
Optionally, groove structure array is produced on the bonding face of piezoelectric monocrystal film；
Silica-base film has in the making of piezoelectric monocrystal film under the one side of groove structure array.
Optionally, groove structure array is produced on the bonding face of silicon base；
Silica-base film is grown in silicon base and makes the one side for having groove structure array.
Optionally, in groove structure array the bonding face transmission side of fluting direction and the piezoelectric monocrystal film of groove angle
For any angle between 0 ° to 90 °.
Second aspect, provides a kind of production method of SAW filter materials, and this method includes：
Photolithography plate is made, is provided with groove array figure on photolithography plate, groove array figure includes several groove figures；
Clean piezoelectric monocrystal film and silicon base；Piezoelectric monocrystal film is lithium tantalate piezoelectric monocrystal film or lithium niobate piezoelectric
Monocrystal thin films；
Using photolithography plate, groove structure array is made on piezoelectric monocrystal film or silicon base；In piezoelectric monocrystal film or
Silica-base film is grown in silicon base；Or, growing silica-base film on a silicon substrate；Using photolithography plate, ditch is made on silica-base film
Slot structure array；
Bonding generates SAW filter materials；
Wherein, in SAW filter materials, piezoelectric monocrystal film is above silica-base film, and silica-base film is on a silicon substrate
Side.
Optionally, when making groove structure array on a silicon substrate using photolithography plate, in piezoelectric monocrystal film or silicon substrate
Silica-base film is grown on bottom, including：
Making on a silicon substrate has the one side growth silica-base film of groove structure array；
Bonding generates SAW filter materials, including：
Silica-base film is bonded with piezoelectric monocrystal film, generates SAW filter materials；
Wherein, the angle on the bonding face of the fluting direction of groove and piezoelectric monocrystal film transmission side is in groove structure array
Any angle between 0 ° to 90 °.
Optionally, when making groove structure array on piezoelectric monocrystal film using photolithography plate, in piezoelectric monocrystal film
Or silica-base film is grown in silicon base, including：
Silica-base film is grown on a silicon substrate；
Bonding generates SAW filter materials, including：
There is the one side of groove structure array to be bonded with making on piezoelectric monocrystal film silica-base film, generates surface acoustic wave material
Material；
Wherein, the angle on the bonding face of the fluting direction of groove and piezoelectric monocrystal film transmission side is in groove structure array
Any angle between 0 ° to 90 °.
Optionally, when making groove structure array on piezoelectric monocrystal film using photolithography plate, in piezoelectric monocrystal film
Or silica-base film is grown in silicon base, including：
Being made on piezoelectric monocrystal film has the one side growth silica-base film of groove structure array；
Bonding generates SAW filter materials, including：
Silica-base film is bonded with silicon base, generates SAW filter materials；
Wherein, the angle on the bonding face of the fluting direction of groove and piezoelectric monocrystal film transmission side is in groove structure array
Any angle between 0 ° to 90 °.
Optionally, when growing silica-base film on a silicon substrate, bonding generates SAW filter materials, including：
Silica-base film is bonded with piezoelectric monocrystal film, generates SAW filter materials；
Wherein, the angle on the bonding face of the fluting direction of groove and piezoelectric monocrystal film transmission side is in groove structure array
Any angle between 0 ° to 90 °.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By making photolithography plate, photolithography plate deletes the forming array figure being provided with including several groove figures, cleaning pressure
Electric monocrystal thin films and silicon base；Using photolithography plate, in the bonding face of silicon base or the bonding face or silicon base of piezoelectric monocrystal film
Bonding face make groove structure array, bonding generate material sequence be piezoelectric monocrystal film, silica-base film, silicon base sound table
Surface wave material；Using the generation of propagation and interface reflected body wave of the groove structure array effects bulk wave in crystalline material, solve
Existing multilayer is bonded piezoelectric material body wave action surface acoustic wave, leads to the problem of the high-end inhibition difference of SAW filter；It reaches
The application range for expanding multilayer bonding piezoelectric material has been arrived, has ensured the effect of the performance of SAW filter.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is the structural schematic diagram according to a kind of SAW filter materials shown in an exemplary embodiment of the invention；
Fig. 2 is the structural schematic diagram according to a kind of silica-base film shown in an exemplary embodiment of the invention；
Fig. 3 is a kind of structural schematic diagram of SAW filter materials shown according to another exemplary embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of SAW filter materials shown according to another exemplary embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram of piezoelectric monocrystal film shown according to another exemplary embodiment of the present invention；
Fig. 6 is a kind of structural schematic diagram of SAW filter materials shown according to another exemplary embodiment of the present invention；
Fig. 7 is a kind of structural schematic diagram of silicon base shown according to another exemplary embodiment of the present invention；
Fig. 8 is a kind of flow chart of the production method for SAW filter materials that an exemplary embodiment of the invention provides；
Fig. 9 is a kind of flow chart of the production method for SAW filter materials that another exemplary embodiment of the present invention provides；
Figure 10 is a kind of flow chart of the production method for SAW filter materials that another exemplary embodiment of the present invention provides；
Figure 11 is a kind of flow chart of the production method for SAW filter materials that another exemplary embodiment of the present invention provides；
Figure 12 is a kind of flow chart of the production method for SAW filter materials that another exemplary embodiment of the present invention provides.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
An embodiment of the present invention provides a kind of SAW filter materials, the SAW filter materials include silicon base, silica-base film,
Piezoelectric monocrystal film.
Silica-base film is on silicon base.
Optionally, silica-base film passes through CVD (Chemical Vapor Deposition, chemical vapor deposition) or PVD
(Physical Vapor Depositio, physical vapor deposition) technique precipitates on a silicon substrate, or, passing through thermal oxide work
Skill is grown on a silicon substrate.
Optionally, silica-base film is silica or silicon nitride.
Piezoelectric monocrystal film is on silica-base film.Piezoelectric monocrystal film is lithium tantalate piezoelectric monocrystal film or lithium niobate pressure
Electric monocrystal thin films.
The bonding face of piezoelectric monocrystal film is burnishing surface.Optionally, piezoelectric monocrystal film is twin polishing or single-sided polishing.
Wherein, being made on the bonding face of the bonding face or silicon base of the bonding face of silica-base film or piezoelectric monocrystal film has ditch
Slot structure array.
Groove structure array is made of several groove structures.The fluting size and shape of groove are true according to actual needs
It is fixed.The depth of groove is no more than the thickness for the material layer for making groove.
Optionally, each groove structure is identical in groove structure array.
Optionally, the groove in groove structure array is arranged in parallel.
Optionally, the groove in groove structure array is equidistantly arranged in parallel.
Optionally, being made on the bonding face of silica-base film has groove structure array.
Optionally, being made on the bonding face of piezoelectric monocrystal film has groove structure array.
Optionally, being made on the bonding face of silicon base has groove structure array.
The bonding face of silicon base is burnishing surface.Optionally, silicon base is single-sided polishing or twin polishing.
The bonding face of silica-base film is burnishing surface.
Fig. 1 schematically illustrates a kind of structural representation of SAW filter materials shown in an exemplary embodiment of the invention
Figure.
Piezoelectric monocrystal film 11 is bonded on silica-base film 12, and silica-base film 12 is on silicon base 13.
Groove structure array 121 is produced on the bonding face of silica-base film 12, as shown in Figure 2.
The making of silica-base film 12 has the one side of groove structure array 121 to be bonded with piezoelectric monocrystal film 11, silica-base film 12
It is grown on silicon base 13.
The bonding face of silica-base film 12 and piezoelectric monocrystal film 11 is burnishing surface.
Fig. 3, Fig. 4 schematically illustrate a kind of SAW filter materials shown in an exemplary embodiment of the invention respectively
Structural schematic diagram.
Groove structure array 111 is produced on the bonding face of piezoelectric monocrystal film 11, as shown in Figure 5.
As shown in Figure 3, Figure 4, silica-base film 12 has in the making of piezoelectric monocrystal film 11 under the one side of groove structure, silicon substrate
Film 12 is on silicon base 13.
Optionally, piezoelectric monocrystal film 11, which makes, has the one side growth of groove structure array 111 to have silica-base film 12, silicon substrate
Film 12 is bonded with silicon base 13, as shown in Figure 3.Silica-base film 12 and the bonding face of silicon base 13 are burnishing surface.
Optionally, silica-base film 12 is grown on silicon base 13, and the making of piezoelectric monocrystal film 11 has groove structure array
111 one side is bonded with silica-base film 12, as shown in Figure 4.The bonding face of piezoelectric monocrystal film 11 and silica-base film 12 is polishing
Face.
The structure that Fig. 6 schematically illustrates a kind of SAW filter materials shown in another exemplary embodiment of the present invention is shown
It is intended to.
Groove structure array 131 is produced on the bonding face of silicon base 13, as shown in Figure 7.
Silica-base film 12 is grown in the one side that groove structure array 131 is provided in silicon base 13, piezoelectric monocrystal film 11
It is bonded with silica-base film 12.
The bonding face of silica-base film 12 and piezoelectric monocrystal film 11 is burnishing surface.
In the alternative embodiment based on Fig. 1 or Fig. 3 or Fig. 4 or embodiment illustrated in fig. 6, groove in groove structure array
The angle on the bonding face of fluting direction and piezoelectric monocrystal film transmission side is any angle between 0 ° to 90 °.
It should be noted that can be according to the thickness requirements of actual product, the piezoelectric monocrystal film to SAW filter materials
Piezoelectric material layer and/or silicon base carry out attenuated polishing.
In conclusion SAW filter materials provided in an embodiment of the present invention, including silicon base, the silicon substrate on silicon base
Film, the piezoelectric monocrystal film on silica-base film, piezoelectric monocrystal film are monocrystalline lithium tantalate film or lithium niobate piezoelectric list
Being made on brilliant film, the bonding face of silica-base film or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base has groove structure
Array, the bonding of silica-base film, the bonding face of piezoelectric monocrystal film, silicon base bonding face be burnishing surface；Utilize groove knot
The generation of propagation and interface reflected body wave of the structure array effects bulk wave in crystalline material solves existing multilayer bonding piezoelectricity
Material bodies wave action surface acoustic wave leads to the problem of the high-end inhibition difference of SAW filter；Expansion multilayer bonding piezoelectricity is reached
The application range of material ensures the effect of the performance of SAW filter.
The production method that Fig. 8 schematically illustrates a kind of SAW filter materials that an exemplary embodiment of the invention provides
Flow chart, as shown in figure 8, the production method of the SAW filter materials includes：
Step 801, photolithography plate is made, groove array figure is provided on photolithography plate.
Groove array figure includes several groove figures.
According to the shape and size of groove, it is spare to prepare corresponding photolithography plate.
Step 802, piezoelectric monocrystal film and silicon base are cleaned.
Piezoelectric monocrystal film is monocrystalline lithium tantalate film or lithium niobate piezoelectric monocrystal thin films.
Silicon base and piezoelectric monocrystal film are cleaned with acetone, deionized water and ethanol solution respectively in ultra-clean chamber,
And it dries.
Step 803, using photolithography plate, groove structure array is made on piezoelectric monocrystal film or silicon base.
Groove structure array is made on piezoelectric monocrystal film using photolithography plate；Alternatively, on a silicon substrate using photolithography plate
Make groove structure array.
In groove structure array the angle on the bonding face transmission side of the fluting direction of groove and piezoelectric monocrystal film be 0 ° extremely
Any angle between 90 °.
Groove structure array is made of several groove structures.The fluting size and shape of groove are true according to actual needs
It is fixed.The depth of groove is no more than the thickness for the material layer for making groove.Such as：The spacing of groove is 1 to 2000um, the depth of groove
Degree is 0.1um to 20um.
Optionally, each groove structure is identical in groove structure array.
Optionally, the groove in groove structure array is arranged in parallel.
Optionally, the groove in groove structure array is equidistantly arranged in parallel.
Step 804, silica-base film is grown on piezoelectric monocrystal film or silicon base.
Silica-base film is grown on piezoelectric monocrystal film；Alternatively, growing silica-base film on a silicon substrate.
Step 805, bonding generates SAW filter materials.
It is bonded in the SAW filter materials generated, piezoelectric monocrystal film is above silica-base film, and silica-base film is in silicon base
Top.
In conclusion the production method of SAW filter materials provided in an embodiment of the present invention, by making photolithography plate, photoetching
Plate deletes the forming array figure being provided with including several groove figures, cleans piezoelectric monocrystal film and silicon base；Utilize photoetching
Plate makes groove structure array, key in the bonding face of silicon base or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base
Symphysis is at the SAW filter materials that material sequence is piezoelectric monocrystal film, silica-base film, silicon base；Utilize groove structure array shadow
The generation for ringing propagation and interface reflected body wave of the bulk wave in crystalline material solves existing multilayer bonding piezoelectric material bulk wave
Surface acoustic wave is influenced, the problem of the high-end inhibition difference of SAW filter is caused；Reach and has expanded answering for multilayer bonding piezoelectric material
With range, ensure the effect of the performance of SAW filter.
In the alternative embodiment based on Fig. 8 embodiments, step 803, which can be replaced, is embodied as step 8031, and step 804 can
It is replaced and is embodied as step 8041, as shown in Figure 9：
Step 8031, silica-base film is grown on a silicon substrate.
Silicon base is put into film deposition equipment, using physical gas-phase deposition or chemical vapor deposition method,
Deposited on silicon substrates silica-base film.
The silicon base for having deposited silica-base film is put into the vacuum environment that temperature is 200 to 1000 ° and is made annealing treatment,
Annealing time is 2 hours or more, to eliminate the defect and impurity generated in silica-base film deposition process.
Step 8041, groove structure array is made on silica-base film using photolithography plate.
In groove structure array the angle on the bonding face transmission side of the fluting direction of groove and piezoelectric monocrystal film be 0 ° extremely
Any angle between 90 °.
The silicon base that grown silica-base film is taken out, corresponding photoresist and spin coating rotating speed are selected according to groove depth；
The bonding face of silica-base film presses spin coating rotating speed spin coating photoresist；Mask is done using photolithography plate, photoresist is exposed；Using aobvious
Shadow liquid develops, and the photoresist of exposed portion is removed.
Using dry etch process, groove structure battle array is generated on the bonding face of silica-base film for eliminating part photoresist
Row, the groove structure array of generation are corresponding with groove array figure on photolithography plate.
Optionally, dry etch process is physical sputter etch or reactive ion etching；When using physical sputter etch,
It is performed etching with Ar+ ions；When using reactive ion etching, mainly using SF6, CHF3, CF4 and C3F4 gas as process gas
Body performs etching.
It slots alternatively, being corroded using wet processing, such as：Corroded using KOH solution.
After groove structure array completes, using acetone or glue is gone to remove remaining photoresist, then cleaning, drying.
Structure using the SAW filter materials of this kind of production method generation is as shown in Figure 1.In SAW filter materials, pressure
For electric monocrystal thin films above silica-base film, silica-base film is square on a silicon substrate.
In bonding, silica-base film is bonded with piezoelectric monocrystal film, specifically, has groove knot by being made on silica-base film
The one side of structure array is aligned with the bonding face of piezoelectric monocrystal film, the method by heating, pressurizeing, close to each other by bonding face
When the Van der Waals force that generates, make the material layer phase counterdiffusion on bonding face both sides, finally by silica-base film and piezoelectric monocrystal film
Bonding face is closely contacted together, generates SAW filter materials.
Figure 10 schematically illustrates a kind of making for SAW filter materials that another exemplary embodiment of the present invention provides
The flow chart of method, as shown in Figure 10, the production method of the SAW filter materials includes：
Step 1001, photolithography plate is made, groove array figure is provided on photolithography plate.
Groove array figure includes several groove figures.
The step is expounded in step 801, and which is not described herein again.
Step 1002, piezoelectric monocrystal film and silicon base are cleaned.
The step is expounded in step 802, and which is not described herein again.
Step 1003, groove structure array is made on a silicon substrate using photolithography plate.
In groove structure array the angle on the bonding face transmission side of the fluting direction of groove and piezoelectric monocrystal film be 0 ° extremely
Any angle between 90 °.
Silicon base is taken out, corresponding photoresist and spin coating rotating speed are selected according to groove depth；It is pressed in the bonding face of silicon base
Spin coating rotating speed spin coating photoresist；Mask is done using photolithography plate, photoresist is exposed；Using developing liquid developing, by exposure portion
The photoresist removal divided.
Using dry etch process, groove structure battle array is generated on the bonding face of silicon base for eliminating part photoresist
Row, the groove structure array of generation are corresponding with groove array figure on photolithography plate.
Optionally, dry etch process is physical sputter etch or reactive ion etching；When using physical sputter etch,
It is performed etching with Ar+ ions；When using reactive ion etching, mainly using SF6, CHF3, CF4 and C3F4 gas as process gas
Body performs etching.
It slots alternatively, being corroded using wet processing, such as：Corroded using KOH solution.
After groove structure array completes, using acetone or glue is gone to remove remaining photoresist, then cleaning, drying.
Step 1004, making on a silicon substrate has the one side growth silica-base film of groove structure array.
There is the one side of groove structure array to be put into film deposition equipment, on a silicon substrate upward by being made in silicon base
Making has the one side deposition silica-base film of groove structure array, such as silica.
Wherein, physical gas-phase deposition, such as evaporation, sputtering can be used in deposition silica-base film, can also use chemistry
Gas-phase deposition, such as：PECVD (plasma enhanced CVD), LPCVD (low pressure chemical vapor deposition).
The silicon base for having deposited silica-base film is put into the vacuum environment that temperature is 200 to 1000 ° and is made annealing treatment,
Annealing time is 2 hours or more, to eliminate the defect and impurity generated in silica-base film deposition process.
Step 1005, silica-base film is bonded with piezoelectric monocrystal film, generates SAW filter materials.
The bonding face of silica-base film is aligned with the bonding face of piezoelectric monocrystal film, the method by heating, pressurizeing passes through
The Van der Waals force generated when bonding face is close to each other makes the material layer phase counterdiffusion on bonding face both sides, finally by silica-base film and
The bonding face of piezoelectric monocrystal film is closely contacted together, generates SAW filter materials, as shown in Figure 6.
In SAW filter materials, for piezoelectric monocrystal film above silica-base film, silica-base film is square on a silicon substrate.
It should be noted that after SAW filter materials complete, change can also be utilized according to the actual demand of product
Mechanical milling tech is learned, the top surface and/or bottom surface to SAW filter materials carry out attenuated polishing.
In conclusion the production method of SAW filter materials provided in an embodiment of the present invention, by making photolithography plate, photoetching
Plate deletes the forming array figure being provided with including several groove figures, cleans piezoelectric monocrystal film and silicon base；Utilize photoetching
Plate makes groove structure array, key in the bonding face of silicon base or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base
Symphysis is at the SAW filter materials that material sequence is piezoelectric monocrystal film, silica-base film, silicon base；Utilize groove structure array shadow
The generation for ringing propagation and interface reflected body wave of the bulk wave in crystalline material solves existing multilayer bonding piezoelectric material bulk wave
Surface acoustic wave is influenced, the problem of the high-end inhibition difference of SAW filter is caused；Reach and has expanded answering for multilayer bonding piezoelectric material
With range, ensure the effect of the performance of SAW filter.
Figure 11 schematically illustrates a kind of making for SAW filter materials that another exemplary embodiment of the present invention provides
The flow chart of method, as shown in figure 11, the production method of the SAW filter materials includes：
Step 1101, photolithography plate is made, groove array figure is provided on photolithography plate.
Groove array figure includes several groove figures.
The step is expounded in step 801, and which is not described herein again.
Step 1102, piezoelectric monocrystal film and silicon base are cleaned.
The step is expounded in step 802, and which is not described herein again.
Step 1103, groove structure array is made on piezoelectric monocrystal film using photolithography plate.
In groove structure array the angle on the bonding face transmission side of the fluting direction of groove and piezoelectric monocrystal film be 0 ° extremely
Any angle between 90 °.
The step is similar with the realization method of step 1003, and those skilled in the art can not have to pay any creative contribution
Ground obtains making the concrete methods of realizing of groove structure array on piezoelectric monocrystal film.
It, can also be first with proton exchange, then with dense sulphur it should be noted that when using wet processing corrosion fluting
The piezoelectric monocrystal film of the mixed solution of acid and nitric acid corrosion proton exchange part.
Step 1104, silica-base film is grown on a silicon substrate.
The step is expounded in step 8031, and which is not described herein again.
It should be noted that step 1103 and step 1104 may be performed simultaneously, alternatively, step 1104 step 1103 it
Preceding execution.
Step 1105, there is the one side of groove structure array to be bonded with making on piezoelectric monocrystal film silica-base film, generate
SAW filter materials.
There is the one side of groove structure array to be aligned with making on piezoelectric monocrystal film the bonding face of silica-base film, by adding
Heat, the method for pressurization, the Van der Waals force generated when close to each other by bonding face make the material layer on bonding face both sides mutually expand
It dissipates, is finally closely contacted the bonding face of silica-base film and piezoelectric monocrystal film together, generate SAW filter materials, such as scheme
Shown in 3.
In SAW filter materials, for piezoelectric monocrystal film above silica-base film, silica-base film is square on a silicon substrate.
It should be noted that after SAW filter materials complete, change can also be utilized according to the actual demand of product
Mechanical milling tech is learned, the top surface and/or bottom surface to SAW filter materials carry out attenuated polishing.
In conclusion the production method of SAW filter materials provided in an embodiment of the present invention, by making photolithography plate, photoetching
Plate deletes the forming array figure being provided with including several groove figures, cleans piezoelectric monocrystal film and silicon base；Utilize photoetching
Plate makes groove structure array, key in the bonding face of silicon base or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base
Symphysis is at the SAW filter materials that material sequence is piezoelectric monocrystal film, silica-base film, silicon base；Utilize groove structure array shadow
The generation for ringing propagation and interface reflected body wave of the bulk wave in crystalline material solves existing multilayer bonding piezoelectric material bulk wave
Surface acoustic wave is influenced, the problem of the high-end inhibition difference of SAW filter is caused；Reach and has expanded answering for multilayer bonding piezoelectric material
With range, ensure the effect of the performance of SAW filter.
Figure 12 schematically illustrates a kind of making for SAW filter materials that another exemplary embodiment of the present invention provides
The flow chart of method, as shown in figure 12, the production method of the SAW filter materials includes：
Step 1201, photolithography plate is made, groove array figure is provided on photolithography plate.
Groove array figure includes several groove figures.
The step is expounded in step 801, and which is not described herein again.
Step 1202, piezoelectric monocrystal film and silicon base are cleaned.
The step is expounded in step 802, and which is not described herein again.
Step 1203, groove structure array is made on piezoelectric monocrystal film using photolithography plate.
In groove structure array the angle on the bonding face transmission side of the fluting direction of groove and piezoelectric monocrystal film be 0 ° extremely
Any angle between 90 °.
The step is expounded in step 1103, and which is not described herein again.
Step 1204, being made on piezoelectric monocrystal film has the one side growth silica-base film of groove structure array.
There is the one side of groove structure array to be put into film deposition equipment, pressing upward by being made on piezoelectric monocrystal film
Being made on electric monocrystal thin films has the one side deposition silica-base film of groove structure array, such as silica.
Wherein, physical gas-phase deposition, such as evaporation, sputtering can be used in deposition silica-base film, can also use chemistry
Gas-phase deposition, such as：PECVD (plasma enhanced CVD), LPCVD (low pressure chemical vapor deposition).
The silicon piezoelectric monocrystal film for having deposited silica-base film is put into the vacuum environment that temperature is 200 to 1000 ° and is carried out
Annealing, annealing time is 2 hours or more, to eliminate the defect and impurity generated in silica-base film deposition process.
Step 1205, silica-base film is bonded with silicon base, generates SAW filter materials.
The bonding face of silica-base film is aligned with the bonding face of silicon base, the method by heating, pressurizeing passes through bonding face
The Van der Waals force generated when close to each other makes the material layer phase counterdiffusion on bonding face both sides, finally by silica-base film and silicon base
Bonding face be closely contacted together, generate SAW filter materials, as shown in Figure 4.
In SAW filter materials, for piezoelectric monocrystal film above silica-base film, silica-base film is square on a silicon substrate.
It should be noted that after SAW filter materials complete, change can also be utilized according to the actual demand of product
Mechanical milling tech is learned, the top surface and/or bottom surface to SAW filter materials carry out attenuated polishing.
In conclusion the production method of SAW filter materials provided in an embodiment of the present invention, by making photolithography plate, photoetching
Plate deletes the forming array figure being provided with including several groove figures, cleans piezoelectric monocrystal film and silicon base；Utilize photoetching
Plate makes groove structure array, key in the bonding face of silicon base or the bonding face of piezoelectric monocrystal film or the bonding face of silicon base
Symphysis is at the SAW filter materials that material sequence is piezoelectric monocrystal film, silica-base film, silicon base；Utilize groove structure array shadow
The generation for ringing propagation and interface reflected body wave of the bulk wave in crystalline material solves existing multilayer bonding piezoelectric material bulk wave
Surface acoustic wave is influenced, the problem of the high-end inhibition difference of SAW filter is caused；Reach and has expanded answering for multilayer bonding piezoelectric material
With range, ensure the effect of the performance of SAW filter.
It should be noted that：The embodiments of the present invention are for illustration only, can not represent the quality of embodiment.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of SAW filter materials, which is characterized in that silica-base film including silicon base, on the silicon base and
Piezoelectric monocrystal film on the silica-base film；
The piezoelectric monocrystal film is lithium tantalate piezoelectric monocrystal film or lithium niobate piezoelectric monocrystal thin films；
It is made on the bonding face of the bonding face or the silicon base of the bonding face of the silica-base film or the piezoelectric monocrystal film
There is groove structure array；
The bonding face of the silica-base film, the bonding face of the piezoelectric monocrystal film, the silicon base bonding face be polishing
Face.
2. SAW filter materials according to claim 1, which is characterized in that the groove structure array is produced on the silicon
On the bonding face of base film；
The silica-base film making has the one side of the groove structure array to be bonded with the piezoelectric monocrystal film, and the silicon substrate is thin
Film is grown on the silicon base.
3. SAW filter materials according to claim 1, which is characterized in that the groove structure array is produced on the pressure
On the bonding face of electric monocrystal thin films；
The silica-base film has in piezoelectric monocrystal film making under the one side of the groove structure array.
4. SAW filter materials according to claim 1, which is characterized in that the groove structure array is produced on the silicon
On the bonding face of substrate；
The silica-base film is grown in the silicon base and makes the one side for having the groove structure array.
5. SAW filter materials according to claim 1, which is characterized in that the fluting of groove in the groove structure array
The angle on the bonding face of direction and piezoelectric monocrystal film transmission side is any angle between 0 ° to 90 °.
6. a kind of production method of SAW filter materials, which is characterized in that the method includes：
Photolithography plate is made, is provided with groove array figure on the photolithography plate, the groove array figure includes several grooves
Figure；
Clean piezoelectric monocrystal film and silicon base；The piezoelectric monocrystal film is lithium tantalate piezoelectric monocrystal film or lithium niobate piezoelectric
Monocrystal thin films；
Using the photolithography plate, groove structure array is made on the piezoelectric monocrystal film or the silicon base；In the pressure
Silica-base film is grown in electric monocrystal thin films or the silicon base；Or, growing silica-base film in the silicon base；Utilize the light
It is mechanical, groove structure array is made on the silica-base film；
Bonding generates the SAW filter materials；
Wherein, in the SAW filter materials, the piezoelectric monocrystal film is above the silica-base film, the silica-base film
Above the silicon base.
7. according to the method described in claim 6, it is characterized in that, when making institute in the silicon base using the photolithography plate
It is described to grow silica-base film on the piezoelectric monocrystal film or the silicon base when stating groove structure array, including：
Being made in the silicon base has the one side of the groove structure array to grow the silica-base film；
The bonding generates the SAW filter materials, including：
The silica-base film is bonded with the piezoelectric monocrystal film, generates the SAW filter materials；
Wherein, in the groove structure array bonding face transmission side of fluting direction and the piezoelectric monocrystal film of groove folder
Angle is any angle between 0 ° to 90 °.
8. according to the method described in claim 6, it is characterized in that, working as using the photolithography plate on the piezoelectric monocrystal film
It is described to grow silica-base film on the piezoelectric monocrystal film or the silicon base when making the groove structure array, including：
The silica-base film is grown in the silicon base；
The bonding generates the SAW filter materials, including：
There is the one side of the groove structure array to be bonded with making on the piezoelectric monocrystal film silica-base film, generates institute
State SAW filter materials；
Wherein, in the groove structure array bonding face transmission side of fluting direction and the piezoelectric monocrystal film of groove folder
Angle is any angle between 0 ° to 90 °.
9. according to the method described in claim 6, it is characterized in that, working as using the photolithography plate on the piezoelectric monocrystal film
It is described to grow silica-base film on the piezoelectric monocrystal film or the silicon base when making groove structure array, including：
Being made on the piezoelectric monocrystal film has the one side of the groove structure array to grow the silica-base film；
The bonding generates the SAW filter materials, including：
The silica-base film is bonded with the silicon base, generates the SAW filter materials；
Wherein, in the groove structure array bonding face transmission side of fluting direction and the piezoelectric monocrystal film of groove folder
Angle is any angle between 0 ° to 90 °.
10. according to the method described in claim 6, it is characterized in that, when on a silicon substrate grow silica-base film when, the bonding
The SAW filter materials are generated, including：
The silica-base film is bonded with the piezoelectric monocrystal film, generates the SAW filter materials；
Wherein, in the groove structure array bonding face transmission side of fluting direction and the piezoelectric monocrystal film of groove folder
Angle is any angle between 0 ° to 90 °.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810220554.0A CN108494380A (en) | 2018-03-16 | 2018-03-16 | SAW filter materials and preparation method thereof |
| PCT/CN2018/083262 WO2019174097A1 (en) | 2018-03-16 | 2018-04-17 | Surface acoustic wave material and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810220554.0A CN108494380A (en) | 2018-03-16 | 2018-03-16 | SAW filter materials and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108494380A true CN108494380A (en) | 2018-09-04 |
Family
ID=63339579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810220554.0A Pending CN108494380A (en) | 2018-03-16 | 2018-03-16 | SAW filter materials and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108494380A (en) |
| WO (1) | WO2019174097A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850692A (en) * | 2020-07-07 | 2020-10-30 | 中国科学院上海微系统与信息技术研究所 | A kind of lithium niobate self-supporting film and preparation method thereof |
| WO2021139117A1 (en) * | 2020-01-08 | 2021-07-15 | 中芯集成电路（宁波）有限公司 | Composite substrate for manufacturing acoustic wave resonator, surface acoustic wave resonator, and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101971491A (en) * | 2008-01-24 | 2011-02-09 | 株式会社村田制作所 | Method for manufacturing acoustic wave device |
| CN105420674A (en) * | 2015-12-04 | 2016-03-23 | 济南晶正电子科技有限公司 | Single-crystal film bonding body and manufacturing method thereof |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100550618C (en) * | 2004-07-14 | 2009-10-14 | 株式会社村田制作所 | Piezoelectric device and manufacture method |
| CN104868873A (en) * | 2015-05-27 | 2015-08-26 | 上海交通大学 | Multilayer composite structure surface acoustics wave device base |
| CN106154186B (en) * | 2016-06-20 | 2020-01-17 | 瑞声声学科技(常州)有限公司 | Surface acoustic wave magnetic sensor and preparation method thereof |
| CN106979830A (en) * | 2017-04-28 | 2017-07-25 | 徐艺玮 | Chipless RFID temperature threshold sensor, production method and temperature alarming device |
| CN107241077B (en) * | 2017-05-12 | 2020-12-29 | 电子科技大学 | Piezoelectric thin-film bulk acoustic wave resonator and method of making the same |
-
2018
- 2018-03-16 CN CN201810220554.0A patent/CN108494380A/en active Pending
- 2018-04-17 WO PCT/CN2018/083262 patent/WO2019174097A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101971491A (en) * | 2008-01-24 | 2011-02-09 | 株式会社村田制作所 | Method for manufacturing acoustic wave device |
| CN105420674A (en) * | 2015-12-04 | 2016-03-23 | 济南晶正电子科技有限公司 | Single-crystal film bonding body and manufacturing method thereof |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021139117A1 (en) * | 2020-01-08 | 2021-07-15 | 中芯集成电路（宁波）有限公司 | Composite substrate for manufacturing acoustic wave resonator, surface acoustic wave resonator, and manufacturing method |
| US12224730B2 (en) | 2020-01-08 | 2025-02-11 | Ningbo Semiconductor International Corporation | Manufacturing method of a composite substrate of an acoustic wave resonator |
| CN111850692A (en) * | 2020-07-07 | 2020-10-30 | 中国科学院上海微系统与信息技术研究所 | A kind of lithium niobate self-supporting film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019174097A1 (en) | 2019-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6621384B2 (en) | Method for manufacturing composite substrate for surface acoustic wave device | |
| CN101645484B (en) | Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof | |
| TW201803268A (en) | Hybrid structure for surface acoustic wave device | |
| CN105164919A (en) | Composite substrate for elastic wave element and elastic wave element | |
| JP2011071967A (en) | Method for manufacturing composite substrate | |
| KR20160037898A (en) | Composite board and method for making same | |
| JPWO2009093376A1 (en) | Method for manufacturing acoustic wave device | |
| JPWO2013031651A1 (en) | Elastic wave device and manufacturing method thereof | |
| CN113676147A (en) | Composite substrate for surface acoustic wave device and method of manufacturing the same | |
| JP2000201050A (en) | Substrate for surface acoustic wave device and manufacture of the same | |
| CN204408291U (en) | A kind of SAW (Surface Acoustic Wave) device of composite substrate | |
| CN108494380A (en) | SAW filter materials and preparation method thereof | |
| CN111864054B (en) | A Surface Optimization Method for Heterogeneous Integrated Piezoelectric Single Crystal Thin Film Substrates | |
| TWI747050B (en) | Composite substrate, piezoelectric element and method for manufacturing composite substrate | |
| JP5992912B2 (en) | Elastic wave device and manufacturing method thereof | |
| CN111883646B (en) | A kind of preparation method of silicon-based lithium tantalate piezoelectric single crystal thin film substrate | |
| JPH11274883A (en) | Piezoelectric composite substrate and surface acoustic wave device | |
| CN212381185U (en) | An Air-gap Thin Film Bulk Acoustic Resonator Facilitating Integration | |
| CN116865704A (en) | Surface acoustic wave filter structure and preparation method thereof | |
| CN112271249A (en) | Silicon-based/ferroelectric single crystal material low temperature wafer bonding and thin film processing method | |
| CN107385394A (en) | ZnO/AlN/Si multilayer films and preparation method and application | |
| CN110085736A (en) | A kind of manufacturing method and application of thin film single crystal piezoelectric material composite substrate | |
| CN220342293U (en) | Surface acoustic wave filter structure | |
| JP2002290182A (en) | Method for manufacturing substrate for surface acoustic wave device | |
| KR100413345B1 (en) | Method For Manufacturing A Langasite Single Crystal Substrate, A Langasite Single Crystal Substrate, and A Piezoelectric Device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 214124 Jiangsu province Binhu District of Wuxi City Economic Development Zone, Road No. 115 Applicant after: Wuxi Haoda Electronic Co., Ltd Address before: 214124 Jiangsu province Binhu District of Wuxi City Economic Development Zone, Road No. 115 Applicant before: Shoulder Electronics Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180904 |
|
| RJ01 | Rejection of invention patent application after publication |