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CN108461541A - Igbt的终端结构、igbt器件及其制造方法 - Google Patents

Igbt的终端结构、igbt器件及其制造方法 Download PDF

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Publication number
CN108461541A
CN108461541A CN201710094873.7A CN201710094873A CN108461541A CN 108461541 A CN108461541 A CN 108461541A CN 201710094873 A CN201710094873 A CN 201710094873A CN 108461541 A CN108461541 A CN 108461541A
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China
Prior art keywords
ring
igbt
cut
terminal structure
resistor
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CN201710094873.7A
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刘剑
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN201710094873.7A priority Critical patent/CN108461541A/zh
Priority to US15/892,249 priority patent/US10741651B2/en
Publication of CN108461541A publication Critical patent/CN108461541A/zh
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Abstract

本发明涉及IGBT的终端结构、IGBT器件及其制造方法。IGBT的终端结构依次包括：主结、一个或多个终端环、以及截止环，所述终端结构还包括电阻性元件，所述电阻性元件电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间。采用本发明所述的终端结构，可以设置终端结构中的各个终端环之间的电势差，使得主结和截止环之间的横向电压均匀等分到各个终端环上，从而保证整个终端结构的电场峰值均匀分布，有效地缩小IGBT终端结构区域的面积，降低IGBT封装的成本同时大幅提高器件的可靠性要求。

Description

IGBT的终端结构、IGBT器件及其制造方法
技术领域
本申请涉及半导体器件及其制造方法，具体地涉及绝缘栅双极型晶体管(IGBT)器件，更具体地涉及IGBT的终端结构以及其制造方法。
背景技术
绝缘栅双极型晶体管(IGBT)是由双极型三极管(BJT)和绝缘栅型场效应管(MOS)组成的复合全控型电压驱动式功率半导体器件,其开关速度与BJT相比较高，而且是电压控制器件，稳定性好，兼有MOSFET的高输入阻抗和BJT的低导通压降两方面的优点。由于IGBT低开关损耗、简单的门极控制、优良的开关可控性等优点，现已成为电力电子领域的新一代主流产品，在家电变频控制、工业控制、机车传动、电力电子装置以及新能源电网接入中得到广泛应用。
常规的IGBT包括元胞区和终端结构，其中IGBT的元胞区是功能区，而IGBT的终端结构的作用是提供器件的横向耐压能力。
IGBT的终端结构一般包括主结、终端环和截止环，其中：主结与元胞区相邻；截止环位于最外侧作为终止端；终端环位于主结和截止环之间，通常为多个，每个终端环由场限环和多级场板构成。
目前主流的终端环设计是：终端环为浮空，浮空的场限环和场板用于降低主结的电场峰值，起到防止元胞区和主结发生雪崩击穿的作用。
图1是常规的IGBT结构示意图，主结与IGBT的发射极等电位；截止环与IGBT的集电极等电位。当电压施加在IGBT的电极(即，发射极和集电极)之间时，电压主要由结深和结宽度都相对较大的主结承担。随着所施加的电压逐渐增大，主结的耗尽层沿着主结向终端环的方向向外延伸。主结和第一终端环(即，图1中的环1)距离选取为使得在主结雪崩击穿之前主结的耗尽层穿通第一终端环，此时主结附近的电场峰值由主结和第一终端环共同承担，减小了主结附近的电场峰值。而继续增加的电压由第一终端环向第二终端环(即，图1中的环2)传递，直到第一终端环的耗尽层穿通第二终端环，以此类推。这样，由于在IGBT的电极上施加的电压不断增大所导致的增强的电场通过主结和多个终端环被逐级地降低，防止了过高的电场强度使元胞区和主结发生雪崩击穿。
然而，浮空设计的终端环存在天生的设计缺陷，即电场峰值不能均匀分布在各个终端环之间，最大电场峰值聚集在主结和截止环两个位置。
图2示意性地示出了图1的IGBT在正常工作时终端结构的AA位置切线的电场分布。由于各个终端环是浮空的，其电位完全受上一级终端环或主结传递的电场强度影响，因而不能最高效地发挥终端环分担电场强度的能力。因此，分担电场强度所实际需要的终端环的数量可能超过预期，从而导致IGBT封装的整体面积不能有效缩小，同时可靠性不能进一步改善。
纵使现有技术提出诸多针对场限环的开孔尺寸和间距进行调整以及优化多层场板的结构设计的设计方案，仍不能从根本上解决该问题。
发明内容
IGBT终端结构的作用是提供器件横向耐压能力。评价IGBT终端结构设计好坏的标准是：
1)从成本角度出发：好的终端结构设计，可以在尽量小的封装尺寸内，满足器件的横向耐压需求；
2)从可靠性角度出发：好的终端结构设计，整个终端结构的电场峰值均匀分布，不会聚集在一个位置，从而引起电荷的再分布，导致器件耐压特性劣化并容易发生电压击穿。
本发明提供了一种优化的IGBT的终端结构以及其制造方法，其通过采用固定电位的终端环设计代替浮空电位的终端环设计，解决了上文所述的终端环之间电场分布不均匀的问题，同时有效缩小了IGBT封装的整体面积，并且进一步改善了器件的可靠性，从而弥补上述浮空的终端环结构的负面设计缺陷。
根据本发明的第一方面，提供了一种IGBT的终端结构，依次包括：主结、一个或多个终端环、以及截止环，所述终端结构还包括电阻性元件，所述电阻性元件电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间。
所述IGBT的终端结构的实施方式可包括以下各项中的一项或多项：
根据本发明的一个实施例，所述电阻性元件具有一定的电阻值分布，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
根据本发明的一个实施例，所述电阻性元件包括单个电阻器，通过调整所述一个或多个终端环连接到所述电阻器上的位置，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
根据本发明的一个实施例，所述电阻性元件包括分别电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间的多个电阻器，通过调整所述多个电阻器的电阻值，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
根据本发明的一个实施例，所述电阻器是具有均匀结构的电阻器以使得：在所述IGBT正常工作时，所述主结和所述截止环之间的电压均匀分布在所述电阻器上。
根据本发明的一个实施例，所述多个终端环具有相同的结构且相邻的两个终端环之间的间距相等。
根据本发明的一个实施例，所述电阻性元件包括高阻值电阻器，所述高阻值电阻器具有足够高的电阻值以使得：在所述IGBT正常工作时，流过所述高阻值电阻器的电流小于所述IGBT的静态漏电电流。
根据本发明的一个实施例，所述电阻性元件设置在所述IGBT的封装外部。
根据本发明的一个实施例，所述电阻性元件设置在所述IGBT的封装内部。
根据本发明的一个实施例，所述电连接是通过金属连线或者通过键合的方式进行的。
根据本发明的第二方面，提供了一种IGBT器件，包括元胞区和前述实施例中一项或多项所述的终端结构。
根据本发明的第三方面，提供了一种用于制造IGBT的终端结构的方法，包括：制作主结、一个或多个终端环、以及截止环；将电阻性元件电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间。
所述IGBT的终端结构的制造方法的实施方式可包括以下各项中的一项或多项：
根据本发明的一个实施例，所述制造方法还包括选择具有一定的电阻值分布的所述电阻性元件，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
根据本发明的一个实施例，所述电阻性元件包括一个电阻器，所述制造方法还包括：调整所述一个或多个终端环连接到所述电阻器上的位置，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
根据本发明的一个实施例，所述电阻性元件包括分别电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间的多个电阻器，所述制造方法还包括：调整所述多个电阻器的电阻值，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
根据本发明的一个实施例，所述制造方法还包括：选择具有均匀结构的电阻器以使得在所述IGBT正常工作时，所述主结和所述截止环之间的电压均匀分布在所述电阻器上。
根据本发明的一个实施例，制作所述多个终端环包括：制作结构相同且相邻的两个终端环之间的间距相等的所述多个终端环。
根据本发明的一个实施例，所述制造方法还包括:选择具有足够高的电阻值的高阻值电阻器作为所述电阻性元件，以使得在所述IGBT正常工作时，流过所述高阻值电阻器的电流小于所述IGBT的静态漏电电流。
根据本发明的一个实施例，将所述电阻性元件设置在所述IGBT的封装外部。
根据本发明的一个实施例，将所述电阻性元件设置在所述IGBT的封装内部。
根据本发明的一个实施例，通过正面金属连线或者通过键合的方式进行所述电连接。
根据本发明的第四方面，提供了一种制造IGBT器件的方法，包括制作元胞区的步骤和前述实施例中一项或多项所述的制造IGBT的终端结构的方法。
采用本发明所述的包含固定电位的终端环设计的IGBT终端结构，可以设置IGBT终端结构中的各个终端环之间的电势差，使IGBT终端结构的主结和截止环之间的横向电压均匀等分到各个终端环上，从而保证整个终端结构的电场峰值均匀分布，而不是集中在主结和截止环这两个位置。电场峰值的均匀分布可以有效缩小终端结构区域面积，降低IGBT封装的成本的同时大幅提高器件的可靠性要求。
对于本领域技术人员而言，通过以下参照附图对本公开的示例性实施例的详细描述，本公开的其它特征、方面及其优点将会变得清楚。
附图说明
附图构成本说明书的一部分，其描述了本公开的示例性实施例，并且连同说明书一起用于解释本发明的原理，在附图中：
图1是常规的IGBT器件的结构示意图。
图2是示出了常规IGBT器件在正常工作时终端结构的电场分布的曲线图。
图3是根据本发明的一个实施例的IGBT器件的结构示意图。
图4是根据本发明的另一个实施例的IGBT器件的结构示意图。
图5是根据本发明的又一个实施例的制造IGBT器件的方法的流程图。
图6是示出了根据本发明的IGBT器件在正常工作时终端结构的电场分布示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
同时，应当明白，为了便于描述，附图中所示出的各个部分的尺寸并不是按照实际的比例关系绘制的。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它示例可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
图3是根据本发明的一个实施例的IGBT器件1的结构示意图，其中包括左侧的元胞区10和右侧的终端结构20。终端结构20依次包括主结21、多个终端环22(即，环1、环2……环n)以及截止环23。当然，终端环也可以只有一个。
如图3所示，终端结构20还包括电连接在主结21、多个终端环22和截止环23中相邻的二者之间的电阻性元件24。该电阻性元件可以具有一定的电阻值分布，以使得主结和截止环之间的电压均匀分布到多个终端环上。
电阻性元件24可以是单个电阻器，如图3所示，电阻器通过金属连线分别与终端结构中的各个部分进行电连接。具体而言，电阻器的两端分别连接到主结和截止环，各个终端环连接到电阻器上的不同位置。
在IGBT正常工作时，电阻器两端的电压为IGBT的发射极端的电位(即，主结的电位)与集电极端的电位(即，截止环的电位)之差，而各个终端环的电位由连接到电阻器上的相应位置处的电位确定，即，图3中的各个终端环是固定电位的。
电阻器起到类似分压器的作用，即通过调整各个终端环连接到电阻器上的位置，可以使得主结和截止环之间的电压均匀分布到各个终端环上。
为了使得连接的位置更容易调整，优选地，电阻器具有均匀结构以使得在IGBT正常工作时，主结和截止环之间的电压均匀分布在电阻器上。例如，可以选择条形电阻器，其中电阻器上各个位置处的电位仅与该位置距电阻器两端的距离有关。这样，各个终端环的电位可以仅根据其连接在电阻器上的位置而容易地调整。
本发明这样的终端保护结构的实现方式在工艺上十分简单，例如，各个终端环可以具有相同的结构且相邻的两个终端环之间的间距相等。这避免了现有技术中终端保护结构的非常复杂的工艺设计：调整场限环的开孔尺寸、结深、宽度和场限环之间的间距；以及改变多层场板的结构设计等等。
采用结构相同且间距相等的终端环使得调整各个终端环的电位更加简单。例如，假设主结与截止环之间的电势差为U，采用n-1个结构相同且间距相等的终端环，则通过使各个终端环分别连接到条形电阻器的n等分处，可使得环1与主结、相邻环之间、环n与截止环之间的电势差均为U/(n+1)。因此，可以仅考虑环的个数来调整终端环连接在电阻器上的位置，从而在IGBT正常工作时容易地实现终端结构区域均匀的电场分布。这使得本发明的终端保护结构的实现与现有技术相比非常简单易行。
在选择电阻器时需要考虑的是在IGBT结构中引入额外的电阻是否会导致器件功耗的显著增加。这可以通过选择高阻值电阻器来避免，选择电阻值足够高的电阻器，以使得在IGBT正常工作时，流过该电阻器的电流小于IGBT的静态漏电电流。
图4是根据本发明的另一个实施例的IGBT器件1'的示意图。除了图3中的单个电阻器24由图4中的多个电阻器24'替代以外，图4中的结构与图3中的结构相似。
在图4中，电阻器1、2、……n+1通过金属连线分别连接在主结与环1之间、环1与环2之间、……、环n-1与环n之间、环n与截止环之间。在IGBT正常工作时，主结和截止环之间的电压由n+1个电阻器分担，而各个终端环的电位根据连接的相应电阻器的电阻值确定，即图4中的各个终端环也是固定电位的。
通过调整连接的相应的电阻器的电阻值可以使得主结和截止环之间的电压均匀分布到多个终端环上。
在选择电阻器时同样可以选择电阻值足够高的电阻器，以使得在IGBT正常工作时，流过该电阻器的电流小于IGBT的静态漏电电流，从而避免由于在IGBT结构中引入额外的电阻而导致的器件功耗的显著增加。
与图3的结构类似，图4中的各个终端环可以采用简单的结构设计。例如，各个终端环可以具有相同的结构且相邻的两个终端环之间的间距相等，使得调整各个终端环的电位更加简单易行。
例如，假设主结与截止环之间的电势差为U，采用n-1个结构相同且间距相等的终端环，则选择n+1个电阻值相同的电阻器，即可使得环1与主结、相邻环之间、环n与截止环之间的电势差均为U/(n+1)，从而在IGBT正常工作时容易地实现终端结构区域均匀的电场分布。
图5是根据本发明的又一个实施例的制造IGBT器件方法的流程图。
制造IGBT器件的方法包括制作元胞区102和制作终端结构。
制造本发明的IGBT的终端结构的方法，包括：制作主结、一个或多个终端环、以及截止环104；以及将电阻性元件电连接在主结、一个或多个终端环和截止环中相邻的二者之间106。
电阻性元件可以是单个电阻器。调整一个或多个终端环连接到电阻器上的位置，可以使得主结和截止环之间的电压均匀分布到一个或多个终端环上。优选地，选择具有均匀结构的电阻器以使得在IGBT正常工作时，主结和截止环之间的电压均匀分布在电阻器上。
电阻性元件也可以是分别电连接在主结、一个或多个终端环和截止环中相邻的二者之间的多个电阻器。调整多个电阻器的电阻值，可以使得主结和截止环之间的电压均匀分布到一个或多个终端环上。
优选地，选择具有足够高的电阻值的高阻值电阻器作为电阻性元件，以使得在IGBT正常工作时流过电阻性元件的电流小于IGBT的静态漏电电流，从而避免由于在IGBT结构中引入额外的电阻而导致的器件功耗的显著增加。
为了使得调整各个终端环的电位更加简单易行，可以制作结构相同且相邻的两个终端环之间的间距相等的多个终端环。
本发明中的电阻性元件的实现方式是多样化的，既可以是设置在IGBT的封装外部的市场上可购买到的普通电阻器，也可以是形成在IGBT的封装内部(例如，通过印刷蚀刻等工艺)的埋电阻，既可以通过金属连线又可以通过键合的方式电连接在IGBT终端结构的相应位置。
图6是示出了图3或图4的IGBT器件在正常工作时终端结构的BB位置切线的电场分布示意图。可以容易地看出，与图2相比，图6中所示的IGBT的终端结构的各个部分(主结、终端环以及截止环)处的电场强度是均匀分布的。
与现有技术中的浮空设计的终端环相比，本发明中IGBT终端结构中的各个终端环的电位并不依赖于电场传递，而是通过固定电位的设计，使得平均每个终端环所能够承担的电场强度更高，高效地发挥了终端环分担电场强度的能力。由于IGBT终端结构能够承受的最大横向耐压等于分布在终端结构的电场强度与终端结构的横向长度的积分，因此，在IGBT器件所需要承担的最大横向耐压固定的情况下，本发明中的IGBT终端结构所需要的终端环的数量与现有技术相比更少，从而有效缩小了IGBT封装的整体面积，同时进一步改善了器件的可靠性。
至此，已经详细描述了根据本公开实施例的IGBT的终端结构及其制造方法。为了避免遮蔽本公开的构思，没有描述本领域所公知的一些细节，本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。
虽然已经通过示例对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (22)

1.一种绝缘栅双极型晶体管(IGBT)的终端结构，依次包括：主结、一个或多个终端环、以及截止环，
所述终端结构还包括电阻性元件，所述电阻性元件电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间。
2.根据权利要求1所述的终端结构，其中所述电阻性元件具有一定的电阻值分布，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
3.根据权利要求2所述的终端结构，其中所述电阻性元件包括单个电阻器，通过调整所述一个或多个终端环连接到所述电阻器上的位置，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
4.根据权利要求2所述的终端结构，其中所述电阻性元件包括分别电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间的多个电阻器，通过调整所述多个电阻器的电阻值，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
5.根据权利要求3或4所述的终端结构，其中所述电阻器是具有均匀结构的电阻器以使得：在IGBT正常工作时，所述主结和所述截止环之间的电压均匀分布在所述电阻器上。
6.根据权利要求1所述的终端结构，其中所述多个终端环具有相同的结构且相邻的两个终端环之间的间距相等。
7.根据权利要求1所述的终端结构，其中所述电阻性元件包括高阻值电阻器，所述高阻值电阻器具有足够高的电阻值以使得：在IGBT正常工作时，流过所述高阻值电阻器的电流小于IGBT的静态漏电电流。
8.根据权利要求1所述的终端结构，其中所述电阻性元件设置在IGBT的封装外部。
9.根据权利要求1所述的终端结构，其中所述电阻性元件设置在IGBT的封装内部。
10.根据权利要求1所述的终端结构，其中所述电连接是通过金属连线或者通过键合的方式进行的。
11.一种绝缘栅双极型晶体管(IGBT)器件，包括元胞区和权利要求1-10中任一项所述的终端结构。
12.一种制造绝缘栅双极型晶体管(IGBT)的终端结构的方法，包括：
制作主结、一个或多个终端环、以及截止环；以及
将电阻性元件电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间。
13.根据权利要求12所述的方法，还包括：选择具有一定的电阻值分布的所述电阻性元件，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
14.根据权利要求13所述的方法，其中所述电阻性元件包括一个电阻器，
所述方法还包括：调整所述一个或多个终端环连接到所述电阻器上的位置，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
15.根据权利要求13所述的方法，其中所述电阻性元件包括分别电连接在所述主结、所述一个或多个终端环和所述截止环中相邻的二者之间的多个电阻器，
所述方法还包括：调整所述多个电阻器的电阻值，以使得所述主结和所述截止环之间的电压均匀分布到所述一个或多个终端环上。
16.根据权利要求14或15所述的方法，还包括：选择具有均匀结构的电阻器以使得在IGBT正常工作时，所述主结和所述截止环之间的电压均匀分布在所述电阻器上。
17.根据权利要求12所述的方法，其中制作所述多个终端环包括：制作结构相同且相邻的两个终端环之间的间距相等的所述多个终端环。
18.根据权利要求12所述的方法，还包括:选择具有足够高的电阻值的高阻值电阻器作为所述电阻性元件，以使得在IGBT正常工作时，流过所述高阻值电阻器的电流小于IGBT的静态漏电电流。
19.根据权利要求12所述的方法，其中将所述电阻性元件设置在IGBT的封装外部。
20.根据权利要求12所述的方法，其中将所述电阻性元件设置在IGBT的封装内部。
21.根据权利要求12所述的方法，其中通过正面金属连线或者通过键合的方式进行所述电连接。
22.一种制造IGBT器件的方法，包括制作元胞区的步骤和权利要求12-21中任一项所述的制造IGBT的终端结构的方法。
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