CN108439328A - Method for preparing inflatable film of flexible film substrate micro-nano structure - Google Patents
Method for preparing inflatable film of flexible film substrate micro-nano structure Download PDFInfo
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- CN108439328A CN108439328A CN201810199159.9A CN201810199159A CN108439328A CN 108439328 A CN108439328 A CN 108439328A CN 201810199159 A CN201810199159 A CN 201810199159A CN 108439328 A CN108439328 A CN 108439328A
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- film substrate
- flexible film
- nano structure
- photoresist
- micro nano
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- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 28
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 14
- 239000004695 Polyether sulfone Substances 0.000 claims description 9
- 229920006393 polyether sulfone Polymers 0.000 claims description 9
- -1 polydimethylsiloxanes Polymers 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229920000098 polyolefin Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- BAZVSMNPJJMILC-UHFFFAOYSA-N triadimenol Chemical compound C1=NC=NN1C(C(O)C(C)(C)C)OC1=CC=C(Cl)C=C1 BAZVSMNPJJMILC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004425 Makrolon Substances 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0033—Manufacture or treatment of substrate-free structures, i.e. not connected to any support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
The invention discloses a method for preparing an inflatable membrane of a flexible membrane substrate micro-nano structure, which comprises the following steps of clamping a flexible membrane substrate by using an upper clamp and a lower clamp; then fixing the back plate with the air inflation hole below the lower clamp; in the contact exposure process, the flexible film substrate and the photoresist on the surface of the flexible film substrate are tightly attached to the mask plate without gaps by utilizing the introduced gas, so that a high-precision micro-nano structure is obtained. Compared with the existing technology for preparing the flexible film substrate micro-nano structure by direct contact exposure, the method has the advantages of tight fit between the film substrate and the mask, good uniformity of line width and depth of the micro-nano structure, high process repeatability and reliability and the like.
Description
Technical field
The invention belongs to micro-nano processing technique fields, and in particular to a kind of flexible film substrate micro nano structure of preparing
Inflating thin film method.
Background technology
Flexible thin-film material such as polyimides, polyethylene naphthalate, Triafol T, polyvinyl alcohol, polyethers
Sulfone, polyether-ether-ketone, polyamidoimide, modified cyclic polyolefin etc., with light-weight, bent, chemical inertness is high, optical
Can be good, cost is relatively low the advantages that, therefore be widely applied in micro-nano processing technique field as base material.
But during contact exposure, since flexible film substrate is bonded depositing for the problems such as not close with mask
With flexible film substrate micro nano structure prepared by art methods there is very important linewidth error and depth to miss
Difference cannot be satisfied the high-precision requirement to micro-nano device in scientific research, industry etc..Therefore, develop a kind of fexible film base
On bottom the high-precision preparation method of micro nano structure be there is an urgent need to.
Invention content
For problems of the prior art, to prepare flexible film substrate micro-nano the purpose of the present invention is to propose to a kind of
The new method of structure --- inflating thin film method.Flexible film substrate is clamped using upper and lower two fixtures first by the present invention；Then
Backboard with air-filled pore is fixed on to the lower section of lower fixture；It, will be flexible using the gas being passed through during contact exposure
The photoresist on film substrate and its surface is fitted closely with mask gapless, to obtain high-precision micro nano structure.With
Existing direct contact type exposure prepares flexible film substrate micro nano structure technology and compares, and has flexible film substrate and mask
Version fitting is close, micro nano structure line width and depth uniformity are good, process repeatability and high reliability.
The present invention is implemented by the following technical programs：A kind of inflation preparing flexible film substrate micro nano structure is thin
Film method includes the following steps：
Flexible film substrate is clamped using upper and lower two fixtures, is tightened by step (1)；
Step (2) is evenly coated with a layer photoresist in flexible film substrate；
Step (3), the lower section that the backboard with air-filled pore is fixed on to lower fixture；
Step (4) takes one piece of conventional rigid mask, and it is made to detach certain interval placement with photoresist；
Step (5), by air-filled pore to the seal cavity being made of upper fixture, flexible film substrate, lower fixture and backboard
It is inside filled with the gas of certain volume, the photoresist on flexible film substrate and its surface is made to be fitted closely with mask；
Step (6) carries out optical exposure using contact exposure technology under the irradiation of ultraviolet light, and mask graph is passed
It is delivered on photoresist；
Step (7) obtains the micro nano structure on photoresist by developing process；
Photoetching offset plate figure is transmitted in flexible film substrate by step (8) using dry etching technology.
Wherein, when the upper fixture in the step (1) and lower fixture are fixed together using screw, pin or buckle, tool
There is clamping, tighten film.
Wherein, the flexible film substrate material in the step (1) be polyimides, epoxy resin, polyurethanes,
Dimethyl silicone polymer, polyethylene terephthalate, polyethylene naphthalate, Triafol T, polyvinyl alcohol,
Polyether sulfone, polyether-ether-ketone, polyamidoimide, modified cyclic polyolefin, makrolon or polymethyl methacrylate.
Wherein, the backboard in the step (3) can utilize screw, pin or buckle the lower section for being fixed on lower fixture, and
Backboard and upper fixture, flexible film substrate, lower fixture form the only seal cavity there are one air-filled pore together.
Wherein, the air-filled pore in the step (3) can process the bottom or side in backboard.
Wherein, the gap width between the mask and photoresist in the step (4) is within the scope of 1-200um, to ensure
The air between photoresist and mask in flexible film substrate can be squeezed away completely, and ensure what micro-structure was transmitted
Positional precision.
Wherein, the gas of certain volume, the following table in flexible film substrate are filled in the step (5) into seal cavity
Under the action of the draught head of face, photoresist and the mask gapless on flexible film substrate and its surface fit closely, at this time will be close
The gas for sealing inside cavity locks, then gas pressure intensity remains unchanged in the short time, to ensure flexible film substrate in exposure process
It will not deform upon.
Wherein, the dry etching technology in the step (8) includes physical etchings, chemical etching and physical chemistry etching.
The advantage of the invention is that：
(1), the present invention makes flexible film substrate and its surface by changing flexible film substrate upper and lower surface draught head
Photoresist is fitted closely with mask gapless, uses the line width and depth of flexible film substrate micro nano structure prepared by this method
Spend that uniformity is more preferable, consistency higher.
(2), method is simple, process repeatability and reliability are high, it can be achieved that flexible for inflating thin film proposed by the present invention
In film substrate prepared by the high-precision of micro nano structure, mass, promotes its extensive use in scientific research, production.
In conclusion the present invention solve flexible film substrate during contact exposure be bonded with mask it is untight
Problem provides technical support for application of the high-precision film substrate micro nano structure in research and production.
Description of the drawings
Fig. 1 is the first, second embodiment：Inflating thin film method prepares the technique stream of flexible film substrate micro nano structure
Cheng Tu, wherein：1- upper fixtures, 2- flexible film substrates, fixture under 3-, 4- photoresists, 5- carry the backboard of air-filled pore, 6- masks
Version, 7- gases, 8- ultraviolet lights.
Specific implementation mode
Below in conjunction with the accompanying drawings and the present invention is discussed in detail in specific implementation mode, and protection scope of the present invention should be wanted including right
The full content asked.By following embodiment, the full content of the claims in the present invention can be thus achieved in those skilled in the art.
Embodiment one：
As shown in 1-1 in Figure 1, flexible film substrate 2 is fixed using 3 two aluminum fixtures of upper fixture 1 and lower fixture,
In, flexible film substrate 2 is Kapton substrate；
As shown in 1-2 in Figure 1, the AZ1500 photoresists 4 that thickness is 600nm are uniformly coated on Kapton base
The upper surface at bottom, and in being toasted 60 seconds on 100 DEG C of hot plate；
As shown in 1-3 in Figure 1, the aluminum backboard 5 with air-filled pore is fixed on lower fixture 3；
As shown in 1-4 in Figure 1, one piece of conventional rigid mask 6 is taken to be mounted on the mask folder of contact exposure machine, and profit
It is 40um to adjust the gap between mask 6 and photoresist 4 with the jacking system of contact exposure machine；
As shown in 1-5 in Figure 1, the air 7 of certain volume is filled with into seal cavity by air-filled pore, it is thin in polyimides
Under the action of film upper and lower surface draught head, photoresist 4 and 6 gapless of mask on Kapton and its surface are closely pasted
It closes, at this time locks the gas inside seal cavity, then gas pressure intensity remains unchanged in the short time, to ensure to gather in exposure process
Imide membrane substrate will not deform upon；
As shown in 1-6 in Figure 1, optical exposure is carried out under the irradiation of ultraviolet light 8 using contact exposure technology, by mask
Figure in version 6 is transmitted on photoresist 4；
As shown in 1-7 in Figure 1, the substrate after exposure is put into AZ300MIF developer solutions and is developed, obtain required photoetching
Glue pattern dries up substrate surface, post bake 20 minutes in 120 DEG C of baking oven after ultrapure water using nitrogen；
As shown in 1-8 in Figure 1, photoetching agent pattern is transmitted on Kapton using reactive ion etching technology,
Obtaining surface has the Kapton of high-precision micro nano structure.
Embodiment two：
As shown in 1-1 in Figure 1, flexible film substrate 2 is fixed using 3 two aluminum fixtures of upper fixture 1 and lower fixture,
In, flexible film substrate 2 is Polyethersulfone membranes substrate；
As shown in 1-2 in Figure 1, the AZ3100 photoresists 4 that thickness is 1.2um are uniformly coated on Polyethersulfone membranes substrate
Upper surface, and in being toasted 150 seconds on 100 DEG C of hot plate；
As shown in 1-3 in Figure 1, the aluminum backboard 5 with air-filled pore is fixed on lower fixture 3；
As shown in 1-4 in Figure 1, one piece of conventional rigid mask 6 is taken to be mounted on the mask folder of contact exposure machine, and profit
It is 20um to adjust the gap between mask 6 and photoresist 4 with the jacking system of contact exposure machine；
As shown in 1-5 in Figure 1, the air 7 of certain volume is filled with into seal cavity by air-filled pore, in Polyethersulfone membranes
Under the action of upper and lower surface draught head, photoresist 4 and 6 gapless of mask on Polyethersulfone membranes and its surface fit closely, this
When by inside seal cavity gas lock, then gas pressure intensity remains unchanged in the short time, to ensure polyether sulfone in exposure process
Film will not deform upon；
As shown in 1-6 in Figure 1, optical exposure is carried out under the irradiation of ultraviolet light 8 using contact exposure technology, by mask
Figure in version 6 is transmitted on photoresist 4；
As shown in 1-7 in Figure 1, the substrate after exposure is put into AZ300MIF developer solutions and is developed, obtain required photoetching
Glue pattern 4 dries up substrate surface, post bake 20 minutes in 120 DEG C of baking oven after ultrapure water using nitrogen；
As shown in 1-8 in Figure 1, photoetching agent pattern is transmitted on Polyethersulfone membranes using reactive ion etching technology, is obtained
Obtaining surface has the flexible polyether sulfone film of high-precision micro nano structure.
What the present invention did not elaborated partly belongs to techniques known.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of inflating thin film method preparing flexible film substrate micro nano structure, it is characterised in that：Include the following steps：
Flexible film substrate (2) is clamped using upper fixture (1) and lower fixture (3), is tightened by step (1)；
Step (2) is evenly coated with a layer photoresist (4) in flexible film substrate (2)；
Step (3), the lower section that the backboard (5) with air-filled pore is fixed on to lower fixture (3)；
Step (4) takes one piece of hardmask version (6), and it is made to detach certain interval placement with photoresist (4)；
Step (5), by air-filled pore to being made of upper fixture (1), flexible film substrate (2), lower fixture (3) and backboard (5)
It is filled with the gas (7) of certain volume in seal cavity, makes the photoresist (4) and mask on flexible film substrate (2) and its surface
(6) it fits closely；
Step (6) carries out optical exposure using contact exposure technology under the irradiation of ultraviolet light (8), and mask graph is passed
It is delivered on photoresist (4)；
Step (7) obtains the micro nano structure on photoresist (4) by developing process；
Photoetching offset plate figure is transmitted in flexible film substrate (2) by step (8) using dry etching technology.
2. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
When upper fixture (1) and lower fixture (3) in step (1) are fixed together using screw, pin or buckle, there is clamping, tighten
The effect of film.
3. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Flexible film substrate (2) material in step (1) is polyimides, epoxy resin, polyurethanes, polydimethylsiloxanes
Alkane, polyethylene terephthalate, polyethylene naphthalate, Triafol T, polyvinyl alcohol, polyether sulfone, polyethers
Ether ketone, polyamidoimide, modified cyclic polyolefin, makrolon or polymethyl methacrylate.
4. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Backboard (5) in step (3) can utilize screw, pin or buckle be fixed on the lower sections of lower fixture (3), and backboard (5) and upper
Fixture (1), flexible film substrate (2), lower fixture (3) form the only seal cavity there are one air-filled pore together.
5. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Air-filled pore in step (3) can process the bottom or side in backboard (5).
6. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Gap width between mask (6) in step (4) and photoresist (4) is in 1-200 μ ms, to ensure flexible film substrate
On photoresist and mask between air can be squeezed away completely, and ensure micro-structure transmit positional precision.
7. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
The gas (7) of certain volume is filled in step (5) into seal cavity, in flexible film substrate (2) upper and lower surface draught head
Under effect, photoresist (4) and mask (6) gapless on flexible film substrate (2) and its surface fit closely, at this time will sealing
The gas of inside cavity locks, then gas pressure intensity remains unchanged in the short time, to ensure flexible film substrate in exposure process (2)
It will not deform upon.
8. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Dry etching technology in step (8) includes physical etchings, chemical etching and physical chemistry etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810199159.9A CN108439328A (en) | 2018-03-12 | 2018-03-12 | Method for preparing inflatable film of flexible film substrate micro-nano structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810199159.9A CN108439328A (en) | 2018-03-12 | 2018-03-12 | Method for preparing inflatable film of flexible film substrate micro-nano structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108439328A true CN108439328A (en) | 2018-08-24 |
Family
ID=63194064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810199159.9A Pending CN108439328A (en) | 2018-03-12 | 2018-03-12 | Method for preparing inflatable film of flexible film substrate micro-nano structure |
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| CN (1) | CN108439328A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111169153A (en) * | 2020-03-06 | 2020-05-19 | 鄂尔多斯市源盛光电有限责任公司 | Printing equipment and frame sealing glue printing device |
| CN111473805A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111620296A (en) * | 2020-05-19 | 2020-09-04 | 中国科学院光电技术研究所 | High-flatness fixing method for adding uniform radial pre-tightening force to flexible film |
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|---|---|---|---|---|
| JPS55144230A (en) * | 1979-04-27 | 1980-11-11 | Fujitsu Ltd | Exposure device |
| JP2008041935A (en) * | 2006-08-07 | 2008-02-21 | Canon Inc | Apparatus and method for controlling close contact of near-field exposure mask |
| CN101375209A (en) * | 2005-08-12 | 2009-02-25 | 惠普开发有限公司 | Contact lithography apparatus, system and method |
| US20140224427A1 (en) * | 2013-02-14 | 2014-08-14 | Fujifilm Corporation | Dry etching apparatus and clamp therefor |
| US20140308768A1 (en) * | 2013-04-16 | 2014-10-16 | Samsung Display Co., Ltd. | Laser-induced thermal imaging apparatus, method of laser-induced thermal imaging, and manufacturing method of organic light-emitting display apparatus using the method |
-
2018
- 2018-03-12 CN CN201810199159.9A patent/CN108439328A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55144230A (en) * | 1979-04-27 | 1980-11-11 | Fujitsu Ltd | Exposure device |
| CN101375209A (en) * | 2005-08-12 | 2009-02-25 | 惠普开发有限公司 | Contact lithography apparatus, system and method |
| JP2008041935A (en) * | 2006-08-07 | 2008-02-21 | Canon Inc | Apparatus and method for controlling close contact of near-field exposure mask |
| US20140224427A1 (en) * | 2013-02-14 | 2014-08-14 | Fujifilm Corporation | Dry etching apparatus and clamp therefor |
| US20140308768A1 (en) * | 2013-04-16 | 2014-10-16 | Samsung Display Co., Ltd. | Laser-induced thermal imaging apparatus, method of laser-induced thermal imaging, and manufacturing method of organic light-emitting display apparatus using the method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111169153A (en) * | 2020-03-06 | 2020-05-19 | 鄂尔多斯市源盛光电有限责任公司 | Printing equipment and frame sealing glue printing device |
| CN111473805A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111473805B (en) * | 2020-04-17 | 2021-09-21 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111620296A (en) * | 2020-05-19 | 2020-09-04 | 中国科学院光电技术研究所 | High-flatness fixing method for adding uniform radial pre-tightening force to flexible film |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180824 |