CN108400207B - A kind of CdS nano-ribbons silicon based hetero-junction light emitting diode and its manufacturing method - Google Patents
A kind of CdS nano-ribbons silicon based hetero-junction light emitting diode and its manufacturing method Download PDFInfo
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- CN108400207B CN108400207B CN201810169404.1A CN201810169404A CN108400207B CN 108400207 B CN108400207 B CN 108400207B CN 201810169404 A CN201810169404 A CN 201810169404A CN 108400207 B CN108400207 B CN 108400207B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000002074 nanoribbon Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract 2
- 239000011521 glass Substances 0.000 claims description 10
- 239000002127 nanobelt Substances 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 238000005411 Van der Waals force Methods 0.000 claims description 3
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- -1 it is cheap Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H01L33/02—
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- H01L33/005—
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- H01L33/22—
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Abstract
The present invention discloses a kind of CdS nano-ribbons silicon based hetero-junction light emitting diode, including p-type silicon substrate, and the surface of p-type silicon substrate has the double wedge structure being spaced apart and anode；It further include cathode and N-shaped CdS nano-ribbons, the both ends of N-shaped CdS nano-ribbons overlap double wedge structure and cathode respectively, are compounded to form p-n heterojunction by p-type silicon substrate and N-shaped CdS nano-ribbons.The invention discloses a kind of preparation methods of CdS nano-ribbons silicon based hetero-junction light emitting diode.The present invention effectively reduces absorption of the substrate to visible light wave range, forms the Fa-Po cavity of stability and high efficiency in CdS nano-ribbons, improve the delivery efficiency of radiant light by etching comb teeth-shaped structure on a silicon substrate.
Description
Technical field
The invention belongs to novel semi-conductor electroluminescent device fields, relate more specifically to a kind of CdS nano-ribbons silicon substrate
The structure and its manufacturing method of heterojunction light-emitting diode and stimulated radiation laser diode.
Background technique
Silicon materials abundant raw material, it is cheap, and silicon substrate processing technology reaches its maturity, so that si-based light-emitting device becomes people
The important topic competitively studied.Due to the indirect bandgap behavior of silicon, causes the realization of efficient silicon substrate light source to exist and greatly choose
War.But there is no the paces for this stagnation being improved to si-based light-emitting device performance, novel silicon base light source knots by research worker
Structure and device are still constantly optimizing and are innovating.
Silicon base luminescence diode is a kind of important channel for realizing si-based light-emitting device, many silicon substrates based on heterojunction structure
Light source is proposed and is realized.But III-V/II-VI semiconductor material is directly grown on a silicon substrate, since lattice is normal
The difference of number, lattice structure and thermal expansion coefficient etc., the problems such as resulting in serious lattice mismatch, internal stress, it is difficult to be formed high
Stable heterogeneous light emitting structure is imitated, and it is then skilful based on one dimension semiconductor nano wire/nanobelt silicon based hetero-junction light emitting diode
Wonderful has evaded the influence of heterojunction structure lattice mismatch bring.
The forbidden bandwidth of silicon is 1.12eV, and the cutoff wavelength for absorbing photon is 1.1 μm, therefore silicon is for 380-760nm's
Visible light wave range, which has, consumingly to be absorbed, and the efficiency of silicon substrate visible light emitting diode is seriously reduced.How silicon substrate is reduced
Absorption to visible light, forms the cavity body structure of stability and high efficiency, improve with improve the efficiency of silicon substrate visible light emitting diode at
For urgent problem to be solved.
Summary of the invention
It is an object of the invention to propose that one kind is novel in visible light wave range to there is the semiconductor of good luminous efficiency to receive
Rice band silicon based hetero-junction light emitting diode and laser diode construct stability and high efficiency by reducing absorption of the silicon substrate to light
Fa-Po cavity improves luminous efficiency.
Semiconductor nano-strip silicon based hetero-junction light emitting diode of the invention and laser diode, pass through p-type silicon substrate and n
Type CdS nano-ribbons (CdS NB) are compounded to form p-n heterojunction.A series of comb teeth-shaped structure is etched on a silicon substrate, is guaranteed
While carrier is efficiently injected into, and absorption of the silicon substrate to light can be reduced, reduce loss, formed in CdS nano-ribbons steady
Fixed efficient Fa-Po cavity.
Specific technical solution of the present invention is as follows:
A kind of CdS nano-ribbons silicon based hetero-junction light emitting diode, including p-type silicon substrate, the surface tool of p-type silicon substrate
There are the double wedge structure being spaced apart and anode；
It further include cathode and N-shaped CdS nano-ribbons, the both ends of N-shaped CdS nano-ribbons overlap double wedge structure and yin respectively
Pole is compounded to form p-n heterojunction by p-type silicon substrate and N-shaped CdS nano-ribbons.
Preferably, the p-type silicon substrate is doped silicon wafer, resistivity is less than or equal to 100 Ω cm.Including but not
It is limited to the p-type silicon substrate of phosphorus doping, the lesser resistivity of silicon substrate is conducive to strengthening electric current injection, improves radiation light output effect
Rate.
Preferably, ito glass resistance is less than or equal to 10000 Ω using ito glass as cathode.Ito glass is lesser
Resistance is conducive to strengthening electric current injection, improves radiation light output efficiency.
Preferably, the spacing of the ito glass and p-type silicon substrate is less than 20 μm.The spacing control of two substrates is existed
In reasonable range, transmission loss is advantageously reduced, improves electric current efficiency of transmission.
Preferably, the N-shaped CdS nano-ribbons are the CdS nano-ribbons of In doping.
Preferably, the anode is the Ti/Au alloy electrode sputtered on p-type silicon substrate.
In another technical solution, cathode and anode are arranged on same silicon substrate, the surface side of the p-type silicon substrate
Equipped with double wedge structure, other side applying oxidn insulating layer and ITO conductive film are as cathode.
The present invention also provides the methods for preparing above-mentioned CdS nano-ribbons silicon based hetero-junction light emitting diode, including walk as follows
It is rapid:
1) the p-type silicon substrate double wedge micro-nano structure that etching spaces are distributed on a silicon substrate, and sputter anode electrode；
2) cathode and p-type silicon substrate are operated into the spacing between two substrates of regulation by micro-nano close to placement；
3) it is operated N-shaped CdS nano-ribbons by micro-nano across between double wedge micro-nano structure and cathode, passes through model moral
Magnificent power forms stable contact, and p-type silicon substrate and N-shaped CdS nano-ribbons are compounded to form p-n heterojunction.
The beneficial effects of the present invention are: the invention proposes a kind of novel nanobelt silicon based hetero-junction visible lights to shine
Diode and laser diode structure effectively reduce substrate to visible light wave by etching comb teeth-shaped structure on a silicon substrate
The absorption of section forms the Fa-Po cavity of stability and high efficiency in CdS nano-ribbons, improves the delivery efficiency of radiant light.And this hair
Bright production method is simple, at low cost, is conducive to push to be widely applied.
Detailed description of the invention
Fig. 1 is parallel construction CdS nano-ribbons silicon based hetero-junction light emitting diode construction schematic diagram；
Fig. 2 is single-chip integration vertical structure CdS nano-ribbons silicon based hetero-junction light emitting diode construction schematic diagram；
Fig. 3 is CdS nano-ribbons silicon based hetero-junction light emitting diode VA characteristic curve；
Fig. 4 is the electroluminescent spectrum of CdS nano-ribbons silicon based hetero-junction light emitting diode；
Fig. 5 is optical field distribution situation in silicon substrate and CdS nano-ribbons when not etching double wedge structure；
Fig. 6 is optical field distribution situation in silicon substrate and CdS nano-ribbons when being etched with double wedge structure.
Specific embodiment
Below with reference to embodiment and attached drawing, the present invention will be described in detail, but the present invention is not limited to this.
Based on CdS nano-ribbons silicon based hetero-junction light emitting diode and laser diode, the present invention devises a kind of discrete
Parallel construction and a kind of single chip integrated vertical structure, specific structure is referring to Figures 1 and 2.
Specific device making technics step:
Embodiment 1:
1, the CdS nano-ribbons that In doping is grown by VLS method, the silicon substrate for being coated with golden catalytic film is placed on
885 DEG C, stream of nitrogen gas 90sccm, air pressure be 300mbar high temperature furnace in grow 80min；
2, by photoetching on the silicon wafer of p-type doping, etching a series of width is 3 μm, and depth is that 3 μm of double wedge shape is micro-
Structure；
3, Ti/Au alloy electrode is plated in the one end for the silicon substrate for being carved with micro-structure by way of magnetron sputtering, first sputtered
Then the Ti film of 20nm sputters the Au film of 50nm；
4, ito glass is placed close to silicon substrate, the spacing between two substrates of regulation is operated by micro-nano, control spacing exists
In 20 μ ms；
5, it is operated by micro-nano and CdS nano-ribbons is transferred between two substrates, regulation keeps CdS nano-ribbons just horizontal
Across on the comb structure and ito glass of silicon substrate, by Van der Waals force, nanobelt and two substrate rigid contacts are put down
The discrete CdS nano-ribbons silicon based hetero-junction light emitting diode/laser diode of row.
Embodiment 2:
1, the CdS nano-ribbons that In doping is grown by VLS method, the silicon substrate for being coated with golden catalytic film is placed on
885 DEG C, stream of nitrogen gas 90sccm, air pressure be 300mbar high temperature furnace in grow 80min；
2, in the silica membrane of the grown above silicon 200nm thickness of p-type doping, and the ITO of further growth 170nm thickness
Conductive film；
3, by photoetching, go part ITO and silica to exposing back lining bottom at quarter, and carry out secondary alignment, In
It is 3 μm that a series of width are etched on exposed silicon substrate, the double wedge shape micro-structure that depth is 3 μm；
4, Ti/Au alloy electrode is plated in the one end for the silicon substrate for being carved with micro-structure by way of magnetron sputtering, first sputtered
Then the Ti film of 20nm sputters the Au film of 50nm；
Operated by micro-nano and CdS nano-ribbons be transferred on silicon substrate, regulation make CdS nano-ribbons just across
On the comb structure and ito thin film of silicon substrate, by Van der Waals force, nanobelt and silicon substrate and ito thin film rigid contact are obtained
Obtain monolithic vertical structure CdS nano-ribbons silicon based hetero-junction light emitting diode/laser diode.
As shown in Figure 3 and Figure 4, the electrology characteristic and optical characteristics of device are tested, the CdS nano-ribbons silicon based hetero-junction
Apparent rectification characteristic is shown, electroeradiescence luminescence peak is located approximately at 520nm, is mostly derived from CdS nano-ribbons oneself
Send out radiation recombination.
As shown in Figure 5 and Figure 6, when calculating surface of silicon etching double wedge structure by simulation and do not etch double wedge structure,
Optical field distribution situation is found in silicon substrate and CdS nano-ribbons, the reasonable contact surface for reducing silicon substrate and CdS nano-ribbons
Product can reduce absorption of the silicon substrate to radiant light, reduce loss, so that the radiation more confinements of light field are in CdS nano-ribbons
In, to form more stable efficient Fa-Po cavity.
The foregoing is merely preferable implementation examples of the invention, are not intended to restrict the invention, it is all in spirit of that invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of CdS nano-ribbons silicon based hetero-junction light emitting diode, which is characterized in that includingpType silicon substrate,pType silicon substrate
Surface there is the double wedge structure that is spaced apart and anode；
Further include cathode andnType CdS nano-ribbons,nThe both ends of type CdS nano-ribbons overlap double wedge structure and cathode respectively,
Pass throughpType silicon substrate withnType CdS nano-ribbons are compounded to formp-nHetero-junctions.
2. CdS nano-ribbons silicon based hetero-junction light emitting diode as described in claim 1, which is characterized in that describedpType
Silicon substrate is doped silicon wafer, and resistivity is less than or equal to 100 Ω cm.
3. CdS nano-ribbons silicon based hetero-junction light emitting diode as described in claim 1, which is characterized in that with ito glass
As cathode, ito glass resistance is less than or equal to 10000 Ω.
4. CdS nano-ribbons silicon based hetero-junction light emitting diode as claimed in claim 3, which is characterized in that the ITO glass
Glass withpThe spacing of type silicon substrate is less than 20 μm.
5. CdS nano-ribbons silicon based hetero-junction light emitting diode as described in claim 1, which is characterized in that describednType sulphur
Cadmium nanobelt is the CdS nano-ribbons of In doping.
6. CdS nano-ribbons silicon based hetero-junction light emitting diode as described in claim 1, which is characterized in that the anode
To sputter atpTi/Au alloy electrode on type silicon substrate.
7. CdS nano-ribbons silicon based hetero-junction light emitting diode as described in claim 1, which is characterized in that describedpType silicon
The surface side of substrate is equipped with double wedge structure, and ITO conductive film is plated as cathode in the other side.
8. a kind of preparation method of CdS nano-ribbons silicon based hetero-junction light emitting diode, comprising:
1) InpThe double wedge micro-nano structure that etching spaces are distributed on type silicon substrate, and sputter anode electrode；
2) by cathode withpType silicon substrate close to placement, by micro-nano operate regulation cathode withpThe spacing of type silicon substrate；
3) being operated by micro-nano willnType CdS nano-ribbons pass through Van der Waals force across between double wedge micro-nano structure and cathode
Stable contact is formed,pType silicon substrate withnType CdS nano-ribbons are compounded to formp-nHetero-junctions.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745468A (en) * | 2002-09-30 | 2006-03-08 | 纳米系统公司 | Large-area nanoenabled macroelectronic substrates and uses therefor |
| CN102569516A (en) * | 2012-01-10 | 2012-07-11 | 合肥工业大学 | Method for preparing p-CdS nano wire and p-CdS/n-Si nano p-n node through manganese trioxide (MoO3) surface doping |
| CN104638079A (en) * | 2015-02-02 | 2015-05-20 | 浙江大学 | Ultraviolet LED (light emitting diode) based on one-dimensional micro-nano structure/gallium nitride thin film Schottky junction |
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| US7208094B2 (en) * | 2003-12-17 | 2007-04-24 | Hewlett-Packard Development Company, L.P. | Methods of bridging lateral nanowires and device using same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745468A (en) * | 2002-09-30 | 2006-03-08 | 纳米系统公司 | Large-area nanoenabled macroelectronic substrates and uses therefor |
| CN102569516A (en) * | 2012-01-10 | 2012-07-11 | 合肥工业大学 | Method for preparing p-CdS nano wire and p-CdS/n-Si nano p-n node through manganese trioxide (MoO3) surface doping |
| CN104638079A (en) * | 2015-02-02 | 2015-05-20 | 浙江大学 | Ultraviolet LED (light emitting diode) based on one-dimensional micro-nano structure/gallium nitride thin film Schottky junction |
Non-Patent Citations (1)
| Title |
|---|
| Visible-Light Self-Driven Photodetector with Enhanced Performance Based on CdS /Si Nanowire Heterojunction;Jiang, YR;《ELECTRONIC MATERIALS LETTERS》;20161130;第12卷(第6期);第841-845页 * |
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