CN108342698A - It is a kind of6The preparation process of LiF target membranes - Google Patents
It is a kind of6The preparation process of LiF target membranes Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000012528 membrane Substances 0.000 title claims abstract 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910002804 graphite Inorganic materials 0.000 claims description 33
- 239000010439 graphite Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 25
- 229910001220 stainless steel Inorganic materials 0.000 claims description 23
- 239000010935 stainless steel Substances 0.000 claims description 23
- 239000012212 insulator Substances 0.000 claims description 11
- 238000007872 degassing Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims 8
- 229910052721 tungsten Inorganic materials 0.000 claims 8
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000011109 contamination Methods 0.000 claims 1
- 238000007723 die pressing method Methods 0.000 claims 1
- 229910052571 earthenware Inorganic materials 0.000 claims 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims 1
- 238000002203 pretreatment Methods 0.000 claims 1
- 230000002000 scavenging effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01D—COMPOUNDS OF ALKALI METALS, i.e. LITHIUM, SODIUM, POTASSIUM, RUBIDIUM, CAESIUM, OR FRANCIUM
- C01D15/00—Lithium compounds
- C01D15/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
Description
技术领域technical field
本发明属于同位素靶材制备技术领域,具体涉及一种6LiF靶膜的制备工艺。The invention belongs to the technical field of isotope target material preparation, and in particular relates to a preparation process of 6 LiF target film.
背景技术Background technique
6Li是原子量最轻的固体同位素,是聚变堆和热核装置的重要材料和燃料,也可以作为中子测量及中子屏蔽材料使用,其中利用该同位素对中子进行测量和监视是以6LiF这一稳定形态进行的,以估算中子场的能量和能谱。 6 Li is the lightest solid isotope in atomic weight. It is an important material and fuel for fusion reactors and thermonuclear devices. It can also be used as neutron measurement and neutron shielding materials. The isotope is used to measure and monitor neutrons . This stable form of LiF was performed to estimate the energy and spectrum of the neutron field.
为了利用6LiF对中子进行测量,需要将其通过一定的工艺将其镀在底衬上,制成6LiF靶膜,该靶膜的厚度通常都在10μm以上。现有的技术是利用热蒸发和普通大电子枪轰击蒸发得到6LiF靶膜,但是该法具有膜与底衬结合力差,膜层容易起皮脱落,蒸发时由于6LiF液滴的飞溅容易造成薄膜表面粗糙并在表面形成大量宏观颗粒。为了得到6LiF膜理论上也可以采用磁控溅射方法,但是由于材料非常昂贵,需要大块的6LiF作为溅射源,因此也不适用。目前急需一种能够合理控制成本、与底衬结合力好、厚度均匀性好的6LiF靶膜的制备技术。In order to use 6 LiF to measure neutrons, it needs to be plated on the substrate through a certain process to make a 6 LiF target film, and the thickness of the target film is usually above 10 μm. The existing technology is to use thermal evaporation and ordinary large electron gun bombardment evaporation to obtain 6 LiF target film, but this method has poor bonding force between the film and the substrate, the film layer is easy to peel off, and it is easy to cause 6 LiF droplet splashing during evaporation. The surface of the film is rough and a large number of macroscopic particles are formed on the surface. In order to obtain 6 LiF film, magnetron sputtering method can also be used in theory, but because the material is very expensive, a large piece of 6 LiF is needed as the sputtering source, so it is not suitable. At present, there is an urgent need for a preparation technology of 6 LiF target film that can reasonably control the cost, have good adhesion to the substrate, and have good thickness uniformity.
发明内容Contents of the invention
(一)发明目的(1) Purpose of the invention
根据现有技术存在的问题,本发明提供了一种与底衬结合力好、厚度均匀、表面光洁度好的6LiF靶膜的制备工艺。According to the problems existing in the prior art, the present invention provides a preparation process of a 6 LiF target film with good bonding force with the substrate, uniform thickness and good surface finish.
(二)技术方案(2) Technical solution
为了解决现有技术所存在的问题,本发明提供的技术方案如下:In order to solve the existing problems of the prior art, the technical solutions provided by the invention are as follows:
一种6LiF靶膜的制备工艺,该工艺包括以下步骤:A kind of preparation technology of 6 LiF target film, this technology comprises the following steps:
1)底衬的预处理1) Pretreatment of the substrate
该预处理包括两个步骤:This preprocessing consists of two steps:
(a)先后用酒精、丙酮对底衬进行去油清洗;(a) Use alcohol and acetone to degrease and clean the underlay successively;
(b)将步骤(a)得到的底衬放入真空中进行辉光放电清洗以进一步除去底衬上吸附或沾染的杂质;(b) putting the substrate obtained in step (a) into a vacuum for glow discharge cleaning to further remove impurities adsorbed or contaminated on the substrate;
所述底衬为铝片、不锈钢片或钛片;The substrate is an aluminum sheet, a stainless steel sheet or a titanium sheet;
2)原材料预处理2) Raw material pretreatment
将粉末状的6LiF原材料,制备成团聚状;然后将团聚状的6LiF以电子轰击的方式除气2~4h;Prepare powdery 6 LiF raw materials into agglomerates; then degas the agglomerated 6 LiF by electron bombardment for 2-4 hours;
该电子轰击所用设备主要包括真空室、石墨坩埚、不锈钢屏蔽筒、第一钨丝、第二钨丝及电源,其中石墨坩埚、不锈钢屏蔽筒、第一钨丝、第二钨丝均位于真空室内部;所述第一钨丝盘为圆形,位于石墨坩埚上方,该圆形直径小于不锈钢屏蔽筒的直径且该第一钨丝高度与不锈钢屏蔽筒上端平齐;所述电源为集成电源,包括交流极和高压极,可分别提供交流电和高压直流电,第一钨丝与电源的交流极连接;该电源高压极的电压、电流和功率参数都可以从0开始连续可调;The equipment used for the electron bombardment mainly includes a vacuum chamber, a graphite crucible, a stainless steel shielding cylinder, a first tungsten wire, a second tungsten wire and a power supply, wherein the graphite crucible, the stainless steel shielding cylinder, the first tungsten wire and the second tungsten wire are all located in the vacuum chamber Inside; the first tungsten wire disc is circular, located above the graphite crucible, the circular diameter is smaller than the diameter of the stainless steel shielding cylinder and the height of the first tungsten wire is flush with the upper end of the stainless steel shielding cylinder; the power supply is an integrated power supply, It includes an AC pole and a high voltage pole, which can provide alternating current and high voltage direct current respectively. The first tungsten wire is connected to the AC pole of the power supply; the voltage, current and power parameters of the high voltage pole of the power supply can be continuously adjusted from 0;
所述石墨坩埚从不锈钢屏蔽筒底部伸入至不锈钢屏蔽筒内,该石墨坩埚用于放置6LiF,其下方设置有一个绝缘体,该绝缘体和石墨坩埚之间设有能够提供高压且能调节石墨坩埚高度的第二钨丝,该第二钨丝的直径为0.9~1.2mm,其一端与石墨坩埚的底部连接、另一端穿过绝缘体与电源的高压极连接;The graphite crucible extends into the stainless steel shielding cylinder from the bottom of the stainless steel shielding cylinder. The graphite crucible is used to place 6 LiF, and an insulator is arranged below it. A second tungsten wire with a height of 0.9-1.2mm in diameter, one end of which is connected to the bottom of the graphite crucible, and the other end is connected to the high voltage pole of the power supply through an insulator;
团聚状的6LiF除气操作只需打开电源交流极开关,电流设置为5~8A,时间为2~4h即可使得真空稳定,真空稳定后除气结束;The agglomerated 6 LiF degassing operation only needs to turn on the AC pole switch of the power supply, set the current to 5-8A, and the time is 2-4 hours to make the vacuum stable, and the degassing ends after the vacuum is stable;
3)电子轰击制备6LiF靶膜3) Preparation of 6 LiF target film by electron bombardment
将除气后的6LiF继续在步骤2)所述的电子轰击设备中以电子轰击的方式沉积在底衬上,该步骤中电子轰击的时间取决于所需6LiF靶膜的厚度; 6 LiF after the degassing are continued to be deposited on the substrate by electron bombardment in the electron bombardment equipment described in step 2), and the time of electron bombardment in this step depends on the thickness of required 6 LiF target film;
其中交流极的参数为电压固定为12V,电流为8~10A;高压极的参数为电压从0开始起调,每10min升高25V,根据石墨坩埚尺寸和6LiF的量调节电压至最高值,该最高值以不使得6LiF熔化为液态为限。Among them, the parameters of the AC pole are that the voltage is fixed at 12V, and the current is 8-10A; the parameters of the high-voltage pole are that the voltage starts from 0 and increases by 25V every 10 minutes, and the voltage is adjusted to the highest value according to the size of the graphite crucible and the amount of 6 LiF. The maximum value is limited so that 6 LiF does not melt to a liquid state.
优选地,步骤1)中所述的辉光放电清洗的主要操作参数包括,清洗时间为3~5min,真空度为1~10Pa,电压为400~500V。Preferably, the main operating parameters of the glow discharge cleaning described in step 1) include cleaning time of 3-5 minutes, vacuum degree of 1-10 Pa, and voltage of 400-500V.
优选地,步骤2)中所述绝缘体为圆盘状氮化硼。Preferably, the insulator in step 2) is disc-shaped boron nitride.
优选地,步骤2)中所述真空室的真空度好于10-3Pa。Preferably, the vacuum degree of the vacuum chamber in step 2) is higher than 10 -3 Pa.
优选地,步骤(2)中所述团聚状的6LiF是通过模压法制备的。Preferably, the agglomerated 6 LiF in step (2) is prepared by molding.
优选地,步骤(2)中所述团聚状的6LiF为圆柱体形状且圆柱体尺寸为:直径6~9mm,厚度为5-8mm。Preferably, the agglomerated 6 LiF in step (2) is in the shape of a cylinder with a diameter of 6-9 mm and a thickness of 5-8 mm.
优选地,所述底衬与石英晶体膜厚监测仪连接。Preferably, the substrate is connected to a quartz crystal film thickness monitor.
优选地,所述底衬距离石墨坩埚内6LiF材料上端的距离为10~15cm。Preferably, the distance between the substrate and the upper end of the 6 LiF material in the graphite crucible is 10-15 cm.
(三)有益效果(3) Beneficial effects
利用本发明提供的6LiF靶膜的制备工艺,制备的6LiF靶膜与底衬的结合力好,不易脱落。同时由于6LiF材料不易购买,采用此方法可尽可能的节约原材料,提高材料的利用率。Utilizing the preparation process of the 6 LiF target film provided by the present invention, the prepared 6 LiF target film has good binding force with the substrate and is not easy to fall off. At the same time, since 6 LiF materials are not easy to purchase, this method can save raw materials as much as possible and improve the utilization rate of materials.
附图说明Description of drawings
图1是具体实施方式实验例1提供的电子轰击设备的示意图;其中1是真空室;2是第二钨丝;3是第一钨丝;4是不锈钢屏蔽筒;5是石墨坩埚;6是碳化硼;7是电源。Fig. 1 is the schematic diagram of the electron bombardment equipment that specific embodiment experiment example 1 provides; Wherein 1 is a vacuum chamber; 2 is the second tungsten wire; 3 is the first tungsten wire; 4 is a stainless steel shielding cylinder; Boron carbide; 7 is a power supply.
具体实施方式Detailed ways
下面将结合具体实验例和说明书附图对本发明做进一步阐述。The present invention will be further elaborated below in conjunction with specific experimental examples and accompanying drawings.
本发明提供的方法制备6LiF的基本原理是:给第一钨丝通以交流电流,并且通过第二钨丝给坩埚加高压,第一钨丝发热并发射的大量电子在静电场作用下,轰击坩埚上,使之温度上升,坩埚内的6LiF靶材料就蒸发出来沉积在基衬上。The basic principle of preparing 6 LiF by the method provided by the present invention is: pass an alternating current to the first tungsten wire, and apply high voltage to the crucible through the second tungsten wire, the first tungsten wire generates heat and emits a large amount of electrons under the action of an electrostatic field, Bombard the crucible to make the temperature rise, and the 6 LiF target material in the crucible evaporates and deposits on the substrate.
实验例1Experimental example 1
一种6LiF靶膜的制备工艺,该工艺包括以下步骤:A kind of preparation technology of 6 LiF target film, this technology comprises the following steps:
1)底衬的预处理1) Pretreatment of the substrate
该预处理包括两个步骤:This preprocessing consists of two steps:
(a)先后用酒精、丙酮对底衬进行去油清洗,除去底衬上沾污的油脂和脏污;(a) Use alcohol and acetone to degrease and clean the underlay successively to remove the grease and dirt stained on the underlay;
(b)将步骤(a)得到的底衬放入真空中进行辉光放电清洗以进一步除去底衬上吸附或沾染的杂质,本步骤较为重要,通过此步骤可以除去底衬上吸附的肉眼不易发现的杂质,以确保6LiF和底衬较牢靠的结合;辉光放电清洗的操作主要参数为清洗时间为3~5min,真空度为1~10Pa,电压为400~500V。(b) Put the substrate obtained in step (a) into a vacuum for glow discharge cleaning to further remove impurities adsorbed or contaminated on the substrate. Impurities found to ensure a more reliable combination of 6 LiF and the substrate; the main parameters of the glow discharge cleaning operation are cleaning time of 3 to 5 minutes, vacuum of 1 to 10Pa, and voltage of 400 to 500V.
所述底衬为铝片,厚度为100μm。The substrate is an aluminum sheet with a thickness of 100 μm.
2)原材料预处理2) Raw material pretreatment
将粉末状的6LiF原材料,制备成团聚状;然后将团聚状的6LiF在高真空中通过电子轰击的方式除气2~4h;该电子轰击所用设备如图1所示,主要包括真空室1、石墨坩埚5、不锈钢屏蔽筒4、第一钨丝3、第二钨丝2及电源7,其中石墨坩埚5、不锈钢屏蔽筒4、第一钨丝3、第二钨丝2均位于真空室内部;所述电源7为集成电源,包括交流极和高压极,可分别提供交流电和高压直流电,关键在于,其高压极的电压、电流和功率参数都可以从0开始连续可调;设置不锈钢屏蔽筒4的作用是可减少电子损失,尽可能使电子都轰击在石墨坩埚5上,真空室1内的真空度为10-4Pa。所述第一钨丝3盘为圆形,位于石墨坩埚上方,圆形直径略小于不锈钢屏蔽筒的直径且该第一钨丝高度与不锈钢屏蔽筒上端平齐;第一钨丝3与电源7的交流极连接。所述石墨坩埚5从不锈钢屏蔽筒4底部伸入至不锈钢屏蔽筒4内,该石墨坩埚5用于放置6LiF,其下方设置有一个绝缘体,该绝缘体和石墨坩埚之间设有能够提供高压且能调节石墨坩埚高度的第二钨丝,该第二钨丝的直径为0.9~1.2mm,其一端与石墨坩埚的底部连接、另一端穿过绝缘体与电源的高压极连接;The powdery 6 LiF raw material is prepared into agglomerates; then the agglomerated 6 LiF is degassed by electron bombardment in a high vacuum for 2-4 hours; the equipment used for the electron bombardment is shown in Figure 1, mainly including a vacuum chamber 1. Graphite crucible 5, stainless steel shielding cylinder 4, first tungsten wire 3, second tungsten wire 2 and power supply 7, wherein graphite crucible 5, stainless steel shielding cylinder 4, first tungsten wire 3, and second tungsten wire 2 are all located in a vacuum Inside the room; the power supply 7 is an integrated power supply, including an AC pole and a high-voltage pole, which can provide alternating current and high-voltage direct current respectively. The key point is that the voltage, current and power parameters of the high-voltage pole can be continuously adjusted from 0; the stainless steel The function of the shielding cylinder 4 is to reduce the loss of electrons, so that the electrons are bombarded on the graphite crucible 5 as much as possible, and the vacuum degree in the vacuum chamber 1 is 10 −4 Pa. The first tungsten wire 3 disk is circular, located above the graphite crucible, the diameter of the circle is slightly smaller than the diameter of the stainless steel shielding cylinder and the height of the first tungsten wire is flush with the upper end of the stainless steel shielding cylinder; the first tungsten wire 3 and the power supply 7 AC pole connection. The graphite crucible 5 extends into the stainless steel shielding cylinder 4 from the bottom of the stainless steel shielding cylinder 4, the graphite crucible 5 is used to place 6 LiF, an insulator is arranged below it, and a high voltage and A second tungsten wire capable of adjusting the height of the graphite crucible, the diameter of the second tungsten wire is 0.9-1.2mm, one end of which is connected to the bottom of the graphite crucible, and the other end is connected to the high voltage pole of the power supply through an insulator;
团聚状的6LiF除气只需打开电源交流极开关,电流设置为5~8A,时间为2~4h即可使得真空稳定,除气结束;For agglomerated 6 LiF degassing, you only need to turn on the AC pole switch of the power supply, set the current to 5-8A, and the time is 2-4 hours to stabilize the vacuum and complete the degassing;
除气步骤可显著提高靶膜纯度及尽可能地使真空度保持稳定,这主要是由于粉末状材料不可避免地会吸附空气中的水分、空气及其他杂质,因此在电子轰击之前先将其除气,否则会使调节好的真空急剧上升并会给靶膜带来O、H、N等杂质。The degassing step can significantly improve the purity of the target film and keep the vacuum as stable as possible. This is mainly because the powdery material will inevitably absorb moisture, air and other impurities in the air, so it is degassed before electron bombardment. Otherwise, the adjusted vacuum will rise sharply and bring impurities such as O, H, and N to the target film.
3)电子轰击制备6LiF靶膜3) Preparation of 6 LiF target film by electron bombardment
将步骤2)得到的6LiF置入电子轰击设备中以电子轰击的方式沉积在底衬上,该步骤中电子轰击的时间取决于所需6LiF靶膜的厚度;底衬距离6LiF材料上端的距离为10~15cm。Put the 6 LiF that step 2) obtains into the electron bombardment equipment and deposit on the substrate in the mode of electron bombardment, the time of electron bombardment in this step depends on the thickness of required 6 LiF target film; The substrate distance 6 LiF material upper end The distance is 10 ~ 15cm.
制备6LiF靶膜过程中,交流极的参数为电压固定为12V,电流为8~10A,高压极的参数为电压从0开始起调,每10min升高25V,根据石墨坩埚尺寸和6LiF的量调节电压至最高值,该最高值以不使得6LiF熔化为液态为限。During the preparation of the 6 LiF target film, the parameters of the AC electrode are fixed at 12V, the current is 8-10A, and the parameters of the high voltage electrode are adjusted from 0 to 25V every 10min. Adjust the voltage to the highest value that does not make the 6 LiF melt into a liquid state.
6LiF靶膜在不熔化成液态的情况下沉积在底衬上,避免了液态的6LiF导致的大量液滴飞溅,并最终形成粗糙不均匀的靶膜。 The 6 LiF target film is deposited on the substrate without melting into a liquid state, which avoids splashing of a large number of droplets caused by the liquid 6 LiF, and finally forms a rough and uneven target film.
本实验例中,在石墨坩埚下面设置一个绝缘体而非导体,是申请人巧妙地利用了电场的原理,其带来的作用非常明显。因为石墨坩埚与高压连接,如果高压下面为导体,那么导体的电位与石墨坩埚相同,第一钨丝发射的电子就会从上而下平行地向高压方向移动,而本实验例中,石墨坩埚下面为绝缘体,电场则以类似锥形的形状聚焦在石墨坩埚上,热量更加集中。同时,第二钨丝的直径较大,可有效地支撑石墨坩埚。In this experimental example, an insulator instead of a conductor is arranged under the graphite crucible, because the applicant cleverly used the principle of the electric field, and the effect it brings is very obvious. Because the graphite crucible is connected to the high voltage, if there is a conductor under the high voltage, then the potential of the conductor is the same as that of the graphite crucible, and the electrons emitted by the first tungsten wire will move from top to bottom in parallel to the high voltage direction. In this experimental example, the graphite crucible Below is the insulator, and the electric field is focused on the graphite crucible in a cone-like shape, and the heat is more concentrated. At the same time, the diameter of the second tungsten wire is relatively large, which can effectively support the graphite crucible.
所述团聚状的6LiF是通过模压法制备的。所述团聚状的6LiF为圆柱体形状且圆柱体尺寸为:直径8mm,厚度为7mm。The agglomerated 6 LiF is prepared by molding. The agglomerated 6 LiF is in the shape of a cylinder with dimensions of 8 mm in diameter and 7 mm in thickness.
所述电子轰击时的参数设置为:高压从0开始起调,每10min升高25V,根据石墨坩埚尺寸和6LiF的量调节电压至最高值,该最高值以不使得6LiF熔化为液态为限,本实验例中,高压为300V。另外,还可通过调节6LiF距离第一钨丝的距离综合实现6LiF的成功制备,避免了6LiF熔化为液态带来的液滴飞溅而带来的靶膜表面粗糙不平。The parameter settings during the electron bombardment are as follows: the high voltage starts from 0, increases by 25V every 10 minutes, and adjusts the voltage to the highest value according to the size of the graphite crucible and the amount of 6 LiF. In this experimental example, the high voltage is 300V. In addition, the successful preparation of 6 LiF can also be achieved comprehensively by adjusting the distance between 6 LiF and the first tungsten wire, which avoids the rough surface of the target film caused by splashing of droplets caused by melting 6 LiF into a liquid state.
实验结果:①在厚度为100μm的Al衬底上制备了直径为Ф50mm、厚度为22μm的6LiF靶膜,该靶膜表面光洁、不脱落,结合力好。Experimental results: ① A 6 LiF target film with a diameter of Ф50 mm and a thickness of 22 μm was prepared on an Al substrate with a thickness of 100 μm. The target film has a smooth surface, does not fall off, and has good adhesion.
②在大气环境下放置6个月,几乎无任何变化,表面不脱落,不松弛,用纱布等擦拭工具擦拭后,靶膜表面无变化;② After being placed in the atmospheric environment for 6 months, there is almost no change, the surface does not fall off or loosen, and after wiping with gauze and other wiping tools, the surface of the target film remains unchanged;
③在5×10-4Pa的真空中对样品进行加热处理,加热温度为300℃,加热保温时间均为6h,结果显示表面几乎无任何变化,表面不脱落,用百万分之一微量天平对热处理前后进行称重,结果显示质量几乎无变化。③Heat the sample in a vacuum of 5×10 -4 Pa, the heating temperature is 300°C, and the heating and holding time is 6h. The results show that there is almost no change on the surface, and the surface does not fall off. Weighing before and after heat treatment showed little change in mass.
实验例2Experimental example 2
与实验例1不同的是,所述底衬与石英晶体膜厚监测仪连接,可以在线监测靶膜厚度;所述底衬为不锈钢片。The difference from Experimental Example 1 is that the substrate is connected to a quartz crystal film thickness monitor, which can monitor the thickness of the target film on-line; the substrate is a stainless steel sheet.
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