CN108345340B - Programmable high-precision low-noise OLED screen power supply generating device - Google Patents
Programmable high-precision low-noise OLED screen power supply generating device Download PDFInfo
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- CN108345340B CN108345340B CN201810258745.6A CN201810258745A CN108345340B CN 108345340 B CN108345340 B CN 108345340B CN 201810258745 A CN201810258745 A CN 201810258745A CN 108345340 B CN108345340 B CN 108345340B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 230000005669 field effect Effects 0.000 claims abstract description 35
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 238000004891 communication Methods 0.000 claims description 13
- 230000002457 bidirectional effect Effects 0.000 claims description 2
- 101100115778 Caenorhabditis elegans dac-1 gene Proteins 0.000 claims 2
- 208000033707 Early-onset X-linked optic atrophy Diseases 0.000 description 4
- 208000025019 optic atrophy 2 Diseases 0.000 description 4
- 101100067427 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FUS3 gene Proteins 0.000 description 3
- 101100015484 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GPA1 gene Proteins 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A programmable high-precision low-noise OLED screen power supply generating device comprises a singlechip, wherein the singlechip is connected with a first connector; the single chip microcomputer is connected with the first analog-to-digital conversion module, the first analog-to-digital conversion module is connected with the direct current-to-direct current module, the direct current-to-direct current module is connected with the first metal oxide semiconductor field effect transistor, and the first metal oxide semiconductor field effect transistor is connected with the second metal oxide semiconductor field effect transistor; the first output end of the second metal oxide semiconductor field effect transistor is connected with a second connector, the second output end of the second metal oxide semiconductor field effect transistor is connected with the analog-to-digital conversion module, the third output end of the second metal oxide semiconductor field effect transistor is connected with a second operational amplifier, and the second connector is connected with the second operational amplifier; the single chip microcomputer is connected with the second analog-digital conversion module, the output of the second analog-digital conversion module is divided into two paths, one path is connected with the first operational amplifier, the other path is connected with the third metal oxide semiconductor field effect transistor, the first operational amplifier is connected with the first metal oxide semiconductor field effect transistor, and the second operational amplifier is connected with the first operational amplifier; the singlechip is connected with a direct current-direct current module, and the direct current-direct current module is connected with a power input.
Description
Technical Field
The application belongs to the field of photoelectricity, and particularly relates to an OLED screen power supply generating device, in particular to a programmable high-precision low-noise OLED screen power supply generating device with strong universality.
Background
An Organic Light-Emitting Diode (OLED) is also called an Organic laser display, an Organic Light-Emitting semiconductor. Is found in the laboratory in 1979 by professor of american chinese Deng Qingyun (child w.tang). The OLED display technology has the advantages of self-luminescence, wide viewing angle, almost infinite contrast, low power consumption, extremely high reaction speed and the like, and is widely applied to the field of display screens.
The existing OLED screen driving power supply generating device is basically based on an integrated power supply IC, higher output precision, output current and lower output noise are difficult to achieve on the output index, output voltage adjustment is difficult to achieve, the device is difficult to adapt to OLED screens of different types, and the device for generating the high-precision low-noise power supply capable of adjusting voltage in a large range is needed in OLED screen detection equipment.
In view of this, in order to solve this problem, it is an object of the present application to provide a programmable high-precision low-noise OLED screen power generation device.
Disclosure of Invention
The application provides a programmable high-precision low-noise OLED screen power supply generating device, which aims to solve the problems that in the prior art, higher output precision, output current and lower output noise are difficult to achieve on output indexes, and the adjustment of output voltage is difficult to achieve and the universality is poor.
In order to achieve the above purpose, the application adopts the following technical scheme: the programmable high-precision low-noise OLED screen power supply generating device comprises a singlechip, wherein the singlechip is connected with a first connector through a serial port communication end and is used for communicating with an external host;
first I of the singlechip 2 The C communication end is connected with the input end of the first analog-to-digital conversion module, the output end of the first analog-to-digital conversion module is connected with the first input end of the direct current-to-direct current module, the output end of the direct current-to-direct current module is connected with the first input end of the first metal oxide semiconductor field effect transistor, and the output end of the first metal oxide semiconductor field effect transistor is connected with the first input end of the second metal oxide semiconductor field effect transistor; the first output end of the second metal oxide semiconductor field effect transistor is used as a power supply output to be connected with the input end of a second connector, the second output end of the second metal oxide semiconductor field effect transistor is connected with the first input end of a second operational amplifier, and the output end of the second connector is connected with the second input end of the second operational amplifier;
second I of the singlechip 2 The C communication end is connected with the input end of the second analog-to-digital conversion module, the output end of the second analog-to-digital conversion module is divided into two paths, one path is connected with the first input end of a first operational amplifier, the output end of the first operational amplifier is connected with the second input end of the first metal oxide semiconductor field effect transistor, and the output end of the second operational amplifier is connected with the second input end of the first operational amplifier;
the first input and output end of the singlechip is connected with the second input end of the direct current-to-direct current module, and the third input end of the direct current-to-direct current module is connected with the power supply input;
the second input and output end of the singlechip is divided into two paths, the first path is connected with the input end of the third metal oxide semiconductor field effect transistor, and the second path is connected with the second input end of the second metal oxide semiconductor field effect transistor.
The relevant content explanation in the technical scheme is as follows:
1. in the above scheme, the single chip microcomputer is connected with the first connector in a bidirectional manner through a pair of external communication universal asynchronous receiving and transmitting transmitters.
2. In the above scheme, the sources of the second mosfet and the third mosfet are grounded.
3. In the above scheme, the analog-to-digital conversion pin end of the singlechip is connected with the first input end of an analog-to-digital conversion module, and the third output end of the second metal oxide semiconductor field effect transistor is connected with the second input end of the analog-to-digital conversion module.
4. In the above scheme, although the application is a programmable high-precision low-noise OLED screen power supply generating device, the power supply can be generated for an AMOLED screen.
Due to the application of the technical scheme, compared with the prior art, the application has the following advantages:
compared with the prior art, the application has the advantages of high voltage output precision, high resolution, low noise and capability of near-end voltage compensation and far-end voltage compensation.
Drawings
Fig. 1 is a circuit block diagram of an OLED screen power generating device of the present embodiment.
Detailed Description
The application is further described below with reference to the accompanying drawings and examples:
examples: programmable high-precision low-noise OLED screen power supply generating device
Referring to fig. 1, the single-chip microcomputer MUC is connected to a first connector CON1 in two directions through a pair of universal asynchronous receiver transmitter UART for external communication, and is used for communicating with an external host.
First I of the singlechip MUC 2 The C communication end is connected with the input end of a first analog-to-digital conversion module DAC1, the output end of the first analog-to-digital conversion module DAC1 is connected with the first input end of a direct current-to-direct current module DC/DC, the output end of the direct current-to-direct current module DC/DC is connected with the first input end of a first metal oxide semiconductor field effect transistor MOSFET1, and the output end of the first metal oxide semiconductor field effect transistor MOSFET1 is connected with the first input end of a second metal oxide semiconductor field effect transistor MOSFET 2; the first output end of the second MOSFET2 is used as a power output and connected to the input end of a second connector CON2, the second output end is connected to the first input end of a second operational amplifier OPA2, and the output end of the second connector CON2 is connected to the second input end of the second operational amplifier OPA 2.
Second I of the singlechip MUC 2 The C communication end is connected with the input end of the second analog-to-digital conversion module DAC2, the output end of the second analog-to-digital conversion module DAC2 is divided into two paths, one path is connected with the first input end of a first operational amplifier OPA1, the output end of the first operational amplifier OPA1 is connected with the second input end of the first metal oxide semiconductor field effect transistor MOSFET1, and the output end of the second operational amplifier OPA2 is connected with the first input end of the first operational amplifier OPA 1.
Wherein, the first operational amplifier OPA1 plays an amplifying role, and the second operational amplifier OPA2 plays a compensating role.
The first input/output pin of the singlechip MUC is connected with the second input end of the DC-DC module DC/DC, and the third input end of the DC-DC module DC/DC is connected with the POWER input POWER IN.
The second input/output pin of the singlechip MUC is divided into two paths, the first path is connected with the input end of the third metal oxide semiconductor field effect transistor MOSFET3, and the second path is connected with the second input end of the second metal oxide semiconductor field effect transistor MOSFET 2. The sources of the second MOSFET2 and the third MOSFET3 are grounded.
The analog-digital conversion pin end of the singlechip MUC is connected with the first input end of an analog-digital conversion module ADC, and the third output end of the second metal oxide semiconductor field effect transistor MOSFET2 is connected with the second input end of the analog-digital conversion module ADC.
In this embodiment, the MCU opens one UART port to realize external communication, and the host can control the output voltage and power on/off timing sequence of the power supply through this port, and opens 2I 2C ports to configure the output voltage of the DC/DC power supply and the output voltage of the MOSFET1, respectively.
The DAC1 outputs a path of program control voltage for adjusting the output voltage of the DC/DC, the output voltage of the DC/DC is used for supplying power for the MOSFET1, and the design can effectively reduce the power loss on the MOSFET1 to the minimum so as to be used for improving the output power of the power supply.
DAC2 outputs a path of program-controlled voltage to OPA1 for indirectly adjusting the output voltage of MOSFET1, wherein OPA1 realizes the function of a linear power error amplifier, MOSFET1 realizes the function of a linear power adjusting tube, and the linear power output by MOSFET1 is directly output after passing through MOSFET2, wherein MOSFET2 and MOSFET3 are respectively used for realizing the functions of output discharge and switching power.
When the ON/OFF signal output by the MCU is pulled down, the MOSFET2 is turned ON, the MOSFET3 is turned ON, the output voltage of the MOSFET1 is 0V, when the ON/OFF signal is pulled up, the MOSFET2 is turned OFF, the MOSFET3 is turned OFF, the MOSFET1 outputs voltage normally, the OPA2 is used for compensating the near-end output voltage and the far-end output voltage, and the ADC is used for sampling and calibrating the output voltage.
The embodiment is realized by adopting an MCU+DC/DC+DAC+OPA+MOSFET framework on hardware, the MCU realizes external communication, output voltage configuration and power on-off time sequence control, DC/DC realizes first step-down for supplying power to the MOSFET so as to reduce power loss on the MOSFET, DAC realizes output voltage adjustment, OPA+MOSFET realizes power amplification and far-end voltage compensation of an output power supply, a high-precision 16bit DAC is firstly adopted on material selection for adjusting the voltage value of the output power supply with high resolution, a high-precision and extremely-low-temperature floating reference voltage source with + -0.02% and 2 ppm/DEG C is matched for ensuring the output voltage precision, the output voltage precision of + -1 mV can be achieved after calibration, then a precision operational amplifier and a high-power MOSFET are adopted for amplifying the output voltage of the output power supply with set gain and improving the output current, and the function of far-end voltage compensation can be realized.
The beneficial effects of this embodiment are: the output voltage values and the power-on and power-off time sequences of all driving power supplies of the OLED screen can be controlled through one UART port; the output voltage of the DC/DC power supply and the output voltage of the MOSFET are respectively adjusted by adopting a 2-path DAC so as to reduce the power loss on the MOSFET; the OPA following mode is adopted to enable the device to have the capabilities of near-end voltage compensation and far-end voltage compensation, and switching is not needed; the high-precision voltage output of the device is realized by adopting a 16bit DAC and a precision OPA+MOSFET; the 5 ppm/DEG C low temperature drift power supply output of the device is realized by adopting an extremely low temperature drift reference source and a low temperature drift gain resistor; the 16bit ADC is used for collecting output voltage and is used for realizing output voltage calibration so as to improve the voltage output precision of the device; the MOSFET discharging mode is adopted to ensure that the output power supply has no residual charge when the power supply is powered off; the MOSFET switch mode is adopted to control the switch of the output power supply of the device.
The above embodiments are provided to illustrate the technical concept and features of the present application and are intended to enable those skilled in the art to understand the content of the present application and implement the same, and are not intended to limit the scope of the present application. All equivalent changes or modifications made in accordance with the spirit of the present application should be construed to be included in the scope of the present application.
Claims (4)
1. A programmable high-precision low-noise OLED screen power supply generating device is characterized in that: the system comprises a single chip Microcomputer (MUC), wherein the single chip Microcomputer (MUC) is connected with a first connector (CON 1) through a serial port communication end and is used for communicating with an external host;
first I of the single chip Microcomputer (MUC) 2 The C communication end is connected with the input end of a first analog-to-digital conversion module (DAC 1), the output end of the first analog-to-digital conversion module (DAC 1) is connected with the first input end of a direct current-to-direct current module (DC/DC), the output end of the direct current-to-direct current module (DC/DC) is connected with the first input end of a first metal oxide semiconductor field effect transistor (MOSFET 1), and the output end of the first metal oxide semiconductor field effect transistor (MOSFET 1) is connected with the first input end of a second metal oxide semiconductor field effect transistor (MOSFET 2); said firstThe first output end of the two metal oxide semiconductor field effect transistor (MOSFET 2) is used as a power supply output to be connected with the input end of a second connector (CON 2), the second output end of the two metal oxide semiconductor field effect transistor is connected with the first input end of a second operational amplifier (OPA 2), and the output end of the second connector (CON 2) is connected with the second input end of the second operational amplifier (OPA 2);
second I of the single chip Microcomputer (MUC) 2 The communication end C is connected with the input end of a second analog-to-digital conversion module (DAC 2), the output end of the second analog-to-digital conversion module (DAC 2) is divided into two paths, one path is connected with the first input end of a first operational amplifier (OPA 1), the output end of the first operational amplifier (OPA 1) is connected with the second input end of the first metal oxide semiconductor field effect transistor (MOSFET 1), and the output end of the second operational amplifier (OPA 2) is connected with the second input end of the first operational amplifier (OPA 1);
the first input and output end of the singlechip (MUC) is connected with the second input end of the direct current-to-direct current module (DC/DC), and the third input end of the direct current-to-direct current module (DC/DC) is connected with the POWER supply input (POWER IN);
the second input and output end of the singlechip (MUC) is divided into two paths, the first path is connected with the input end of the third metal oxide semiconductor field effect transistor (MOSFET 3), and the second path is connected with the second input end of the second metal oxide semiconductor field effect transistor (MOSFET 2).
2. The programmable high-precision low-noise OLED screen power generating device of claim 1, wherein: the singlechip (MUC) is connected with the first connector (CON 1) in a bidirectional way through a pair of external communication Universal Asynchronous Receiver Transmitter (UART).
3. The programmable high-precision low-noise OLED screen power generating device of claim 1, wherein: the sources of the second metal oxide semiconductor field effect transistor (MOSFET 2) and the third metal oxide semiconductor field effect transistor (MOSFET 3) are grounded.
4. The programmable high-precision low-noise OLED screen power generating device of claim 1, wherein: the analog-to-digital conversion pin end of the singlechip (MUC) is connected with the first input end of an analog-to-digital conversion module (ADC), and the third output end of the second metal oxide semiconductor field effect transistor (MOSFET 2) is connected with the second input end of the analog-to-digital conversion module (ADC).
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949962A (en) * | 2010-05-27 | 2011-01-19 | 东莞市锐源仪器有限公司 | Programmable electronic load |
| CN208188711U (en) * | 2018-03-27 | 2018-12-04 | 苏州佳智彩光电科技有限公司 | A kind of program-controlled high-precision low noise OLED screen power generating devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3838547B2 (en) * | 2001-12-11 | 2006-10-25 | 株式会社ルネサステクノロジ | Power supply device for high frequency power amplifier circuit |
| US7728569B1 (en) * | 2007-04-10 | 2010-06-01 | Altera Corporation | Voltage regulator circuitry with adaptive compensation |
| JP4512632B2 (en) * | 2007-12-19 | 2010-07-28 | Ｏｋｉセミコンダクタ株式会社 | DC-DC converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949962A (en) * | 2010-05-27 | 2011-01-19 | 东莞市锐源仪器有限公司 | Programmable electronic load |
| CN208188711U (en) * | 2018-03-27 | 2018-12-04 | 苏州佳智彩光电科技有限公司 | A kind of program-controlled high-precision low noise OLED screen power generating devices |
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