CN108321272A - Light-emitting device and preparation method thereof - Google Patents
Light-emitting device and preparation method thereof Download PDFInfo
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- CN108321272A CN108321272A CN201810094042.4A CN201810094042A CN108321272A CN 108321272 A CN108321272 A CN 108321272A CN 201810094042 A CN201810094042 A CN 201810094042A CN 108321272 A CN108321272 A CN 108321272A
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- emitting device
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- emitting component
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Abstract
The present invention discloses a kind of light-emitting device and preparation method thereof, and production method includes step：One first support plate is provided, is contacted with multiple first metals；One base material is provided；Multiple luminous laminations and multiple grooves are formed on base material, plurality of luminous lamination is by waiting grooves and being separated from each other；Connect multiple luminous laminations and the first support plate；An encapsulating material is formed to be co-located on multiple luminous laminations；And the first support plate of cutting and encapsulating material are to form the light-emitting device unit of multiple die-levels.
Description
The present invention is Chinese invention patent application (application number：201410663642.X the applying date：On November 18th, 2014,
Denomination of invention：Light-emitting device and preparation method thereof) divisional application.
Technical field
The present invention relates to a kind of light-emitting component and preparation method thereof and a kind of light-emitting device arrays and preparation method thereof, special
It is not to be related to a kind of light-emitting device and preparation method thereof.
Background technology
Existing light emitting diode (LED) encapsulation technology is the first dispensing on chip carrier (sub-mount), then by light-emitting diodes
Tube chip is fixed on chip carrier, and then forms a light-emitting diode, this step is known as die bond (Die Bonding).Gu
Brilliant glue material is mainly the elargol or other non-conductive epoxy resins for having electric conductivity.Light-emitting diode is combined in electricity later
On the plate of road.The light emitting diode of upside-down mounting (flip chip) formula makes the p-type semiconductor conductive layer in diode structure partly be led with N-shaped
Body conductive layer, is exposed to the same side, thus can be direct with can be by cathode and anode electrode fabrication on the same side of diode structure
The light emitting diode construction for being provided with cathode and anode electrode is covered on a tin material (solder).In this way, can exempt using tradition
The demand of metal bracing wire (wire bonding).However existing flip-over type light emitting diode is still needed to through envelopes such as cutting, die bonds
Step is filled, could be linked with circuit board.Therefore, if the electrode of flip-over type light emitting diode has sufficiently large contact area, just
Existing encapsulation step can be omitted.
The operation electric current of general tradition LED is about tens of to hundreds of milliamperes (mA), but brightness is often not enough to deal with
Needed for general illumination.If combining a large amount of LED to improve brightness, the volume of LED illumination element leads to increase in the market
Competitive reduce.Therefore, the tube core brightness for promoting single LED, becomes inevitable trend.However, when LED is sent out towards high brightness
The several times that it is tradition LED that the operation electric current and power of Zhan Shi, single LED, which increase, are to hundreds times, for example, the LED of a high brightness
Operation electric current be about hundreds of milliamperes to several amperes so that heat problem caused by LED can not be ignored.The performance meeting of LED
Reduced because of " heat ", such as fuel factor can influence the emission wavelength of LED, characteristic of semiconductor also Yin Re and generate brightness decay,
Even component wear is caused when more serious.Therefore, how high-capacity LED radiates as the important issue of LED.
Divide in U.S. Patent Application No. 2004/0188696 and 2004/023189 (segmented speech for 2004/0188696)
Do not disclose it is a kind of using surface mount technology (Surface Mount Technology, SMT) LED encapsulation structure and side
Method, wherein each encapsulating structure contains a LED chip.Each LED chip first in the form of upside-down mounting, passes through convex block (bonding
Bump it) is attached on the front side (front side) of a chip carrier (sub-mount).Have in chip carrier and in advance digs out
Opening array, and fill out with metal to form channel array (via array).The electrode of this chip can be connected by this channel array
To the rear side (back side) with tin material of chip carrier.This channel array can also be used as the heat dissipation path of LED chip.Every
One LED chip sticks together with time substrate and then by secondary substrate cut, to carry out subsequent LED encapsulation.
However, the chip carrier in U.S. Patent Application No. 2004/0188696 and 2004/023189, need to dig out fill out with
The channel array (via array) of metal increases manufacture craft cost.In addition, each LED chip is attached to the step of chip carrier
Suddenly, the complexity of making can also be increased.Therefore, if there can be a kind of light emitting diode, it is not required to chip carrier, also there is good dissipate
Hot path can have advantage on the market.
Invention content
The present invention discloses a kind of production method of light-emitting device, and it includes steps：One first support plate is provided, with multiple
First metal contacts；One base material is provided；Multiple luminous laminations and multiple grooves are formed on base material, plurality of luminous lamination
By multiple grooves be separated from each other；Connect multiple luminous laminations and the first support plate；Formed an encapsulating material be co-located in it is more
On a luminous lamination；And the first support plate of cutting and encapsulating material are to form the light-emitting device unit of multiple die-levels.
In one embodiment of the invention, the production method of light-emitting device also includes to form a first wave length conversion layer in one
On first luminous lamination, the light that the first luminous lamination is sent out is converted to one first light by first wave length conversion layer；Form one second
For wavelength conversion layer on one second luminous lamination, the light that the second luminous lamination is sent out is converted to one second by second wave length conversion layer
Light；And providing a third luminous lamination, there is not any wavelength conversion material in the top of the luminous lamination of third, wherein first
The light that the luminous lamination of lamination, the second luminous lamination and the third of shining is sent out is blue light, and the first light is green light and the second light is red
Light.
Description of the drawings
Figure 1A to Fig. 1 D is the schematic diagram of the LED production method of the embodiment of the present invention；
Fig. 1 E and Fig. 1 F are respectively the application schematic diagram of the light emitting diode of the embodiment of the present invention；
Fig. 2A to Fig. 2 D is the schematic diagram of the light emitting diode matrix production method of the embodiment of the present invention；
Fig. 2 E are the schematic diagram of the light emitting diode matrix and circuit board connection of the embodiment of the present invention；
Fig. 2 F and Fig. 2 G are the encapsulation schematic diagram of the light emitting diode matrix of the embodiment of the present invention；
Fig. 3 A to Fig. 3 G are the sectional view corresponding to production method flow each stage of the light-emitting device of the embodiment of the present invention；
Fig. 4 A are the vertical view that light-emitting device array as illustrated in Figure 3 F is connect in the form of upside-down mounting with circuit board；
Fig. 4 B are that the RGB light-emitting device unit of the die-level of the embodiment of the present invention includes RGB as shown in Figure 3 G
The vertical view of light-emitting component group；
Fig. 5 A are the vertical view that the light-emitting device array of the embodiment of the present invention is connect in the form of upside-down mounting with circuit board；
Fig. 5 B are the vertical view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention；
Fig. 5 C are the sectional view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention；
Fig. 5 D are the vertical view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention；
Fig. 5 E are the sectional view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention；
Fig. 6 A are the sectional view of the RGB light-emitting device unit of the die-level of the embodiment of the present invention
Fig. 6 B are the schematic diagram of single light-emitting component in light-emitting device array shown in Fig. 6 A；
Fig. 6 C are the schematic diagram of single light-emitting component in the light-emitting device array of the embodiment of the present invention；
Fig. 7 A to Fig. 7 G are cuing open corresponding to a kind of production method flow each stage of light-emitting device of the embodiment of the present invention
View；
Fig. 7 H are that the RGB light-emitting device unit of the die-level of the embodiment of the present invention includes RGB as shown in Figure 7 G
The vertical view of light-emitting component group；
Fig. 7 I are the sectional view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention；
Fig. 7 J are the vertical view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention；
Fig. 8 A are the schematic diagram of the display module of the embodiment of the present invention；
Fig. 8 B are the schematic diagram of the display module of the embodiment of the present invention；And
Fig. 9 is the light bulb element exploded view of the embodiment of the present invention.
Symbol description
Light emitting structure ... 100,200a, 200b and 200c
Base material ... 11,21
First conductive layer ... 102
Active layer ... 104
Second conductive layer ... 106
Electrode or joint sheet ... 107a, 107b
Protective layer ... 120
First dielectric layer ... 122
Second dielectric layer ... 140,240
Dielectric layer ... 222a, 222b, 222c, 240a, 240b, 240c, 280
Metal layer ... 160,260a, 260b, 260c, 162,262a, 262b, 262c
Light-emitting device array ... 20,30,32,32 '
Base material ... 21
Tin material ... 22
Circuit board ... 13,23
Transparent encapsulation material ... 24
Light-emitting element package ... 25
Light-emitting component ... 10,10a, 10b, 10c, 20a, 20b, 20c, 300,300a, 300b, 300c, 300d, 300a ',
300b’、300c’、300d’
Surface ... 102a
Shine lamination ... 101
Reflecting layer ... 221
The first metal layer ... 260,260 '
Second metal layer ... 262,262 '
Light non-transmittable layers ... 290
Metal contact ... 22
Conductive channel ... 22a
First wave length conversion layer ... 294
Second wave length conversion layer ... 296
RGB light-emitting device unit ... 35,36,36 ', 65,66,37
First width ... S1, S6 '
First length ... S2
Second width ... d1, d1 '
Second length ... d2
First distance ... S3, S3 '
Second distance ... S4
Third distance ... S5
Wavelength conversion layer ... 298
First length ... S1
First width ... S6
Packing material ... 680
Display module ... 76
Second circuit support plate ... 73
Circuit ... 72
Lighting module ... 78
Light bulb ... 80
Optical lens ... 82
Radiating groove ... 85
Linking part ... 87
Electric connector ... 88
Specific implementation mode
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is attached appended by cooperation
Figure is described in detail below.In the accompanying drawings, the shape of element or thickness can be expanded or shunk.It needs it is specifically intended that in figure not
The element for being painted or describing can be the form known to those skilled in the art.Each embodiment cited by the present invention is only used
To illustrate the present invention, it is not used to limit the scope of the present invention.Anyone any modification apparent easy to know made for the present invention
Or change does not all depart from spirit and scope of the invention.
A to Fig. 1 E referring to Fig.1, for according to a kind of each stage institute of the production method flow of light-emitting component of the embodiment of the present invention
Corresponding sectional view.In figure 1A, be initially formed a light emitting structure 100, it includes a base material 11, one first conductive layer 102 with
As a clad, an active layer 104 be located on the first conductive layer 102 using as a luminescent layer, one second conductive layer 106 in this
Using as another clad on active layer 104.Preferably, as shown in Figure 1A, an electrode or joint sheet (bonding pad) 107a
On the part of the exposure of the first conductive layer 102, another electrode or joint sheet 107b are on the second conductive layer 106.Electrode
Or the material (such as aluminium) of joint sheet 107a and 107b should be with production method and practises known to this operator, is not added with repeats herein.
In addition, in one embodiment, light emitting structure 100 includes also a protective layer (passivation layer) 120, to protect this hair
Photo structure 100.The material (such as silica) of this protective layer 120 is also to practise known to this operator, herein with production method
Add and does not repeat.
In one embodiment, the first conductive layer 102 is a n-type semiconductor conductive layer, and the second conductive layer 106 is a p-type
Semiconductor conducting layer.N-type semiconductor conductive layer 102, p-type semiconductor conductive layer 106 be it is any it is existing or future in visible person
Semi-conducting material is preferably III-V (three/five) compound semiconductor, such as aluminum indium gallium nitride (AlxGayln(1-x-y)N)
Or AlGaInP (AlxGayIn(1-x-y)P), wherein 0≤x≤1,0≤y≤1,0≤x+y≤1, and optionally further by p/n
Type admixture is adulterated.And existing semi-conducting material and structure also can be used in active layer 104, such as material can be aluminum indium gallium nitride
(AlxGayln(1-x-y)) or AlGaInP (Al NxGayln(1-x-y)P) etc., and structure can be single quantum well (Single
Quantum Well, SQW), multiple quantum trap (Multiple Quantum Well, MQW) and double heterogeneous (Double
Heterosture, DH), principle of luminosity is existing technology with mechanism, and details are not described herein.In addition, light emitting structure 100 can
Pass through Metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy growth (molecular beam epitaxy, MBE) system
Make the making such as technique or hydride gas-phase epitaxy growth (hydride vapor phase epitaxy, HVPE) manufacture craft.
Then, as shown in Figure 1B, one first dielectric layer 122 is formed on this light emitting structure 100.Preferably, the first dielectric
Layer 122 is a transparent dielectric layer, thus heat caused by light emitting structure 100 is effectively conducted in and its thickness D≤20 μm.First
The material of dielectric layer 122 can be silica (SiO2), silicon nitride (Si3N4) or a combination thereof, and its can by MOCVD or
MBE makes.
Later, referring to Fig. 1 C, one second dielectric layer 140 is formed on the first dielectric layer 122.The material of second dielectric layer 140
Material can be silica, silicon nitride, polyimide (polyimide), BCB (bisbenzocyclobutene) and photic anti-
It loses and selects one in agent (photoresist).Preferably, about 25 μm of the thickness of the second dielectric layer 140 a, by printing technology
It is formed.
Metal layer 160 is formed after the formation of the second dielectric layer 140 referring to Fig. 1 D, metal layer 160 is located at light emitting structure
On 100 and the first conductive layer 102 in electrical contact, and partial metal layer 160 is located on the first dielectric layer 122；And form gold
Belong to layer 162, metal layer 162 is located on light emitting structure 100 and the second conductive layer 106 in electrical contact, and partial metal layer 162
In on the first dielectric layer 122.Wherein, the first dielectric layer 122 and the second dielectric layer 140 isolation metal layer 160 and metal layer 162.
The material of metal layer 160 or metal layer 162 can be selected from golden (Au), aluminium (Al), silver-colored (Ag), its etc. alloy or other are existing
Metal.Preferably, metal layer 160 is collectively formed with metal layer 162 by a printing technology or plating.Via above-mentioned steps,
Complete light-emitting component 10.
In one embodiment, the first dielectric layer 122 is a transparent dielectric layer, and the first dielectric layer 122 and metal layer 160
And/or the light that the contact surface of metal layer 162 is sent out for reflection light emitting structure 100, thus can effectively promote the light of light-emitting component 10
Output intensity.In addition, metal layer 160 and/or the metal layer 162 also heat dissipation path as light emitting structure 100, when metal layer 160
And metal layer 162 has larger contact area A1, A2, it helps radiates effectively and quickly.
It referring to Fig. 1 E, is formed after the structure as shown in Fig. 1 D, the production method of light-emitting component also includes a removal base
The step of material 11, for exposing the first conductive layer 102.Base material 11 may, for example, be a sapphire substrate or GaAs base
Material.When base material 11 be sapphire substrate, can pass through excimer laser (excimer laser) remove base material 11.Excimer laser
It is 400 millijoules/square centimeter (mJ/cm that can have energy for one2), wavelength be 248 nanometers and pulse width (pulse
Width it is) cesium fluoride (KrF) excimer laser of 38 nanoseconds (ns).In higher temperature, such as 60 DEG C, when quasi-molecule swashs
When light is radiated on sapphire substrate, sapphire substrate is removed to expose the first conductive layer 102.In addition, when base material 11 is
GaAs base material, a ratio are 1:35 ammonium hydroxide (NH4OH) with hydrogen peroxide (H2O2) solution or a ratio be 5:3:5
Phosphoric acid (H3PO4), hydrogen peroxide (H2O2) can be used for removing GaAs base material with the solution of water, for exposing the first conduction
Layer 102.
After removing base material 11, the production method of light-emitting component also includes the surface 102a of the first conductive layer 102 of roughening.Example
Such as, when the first conductive layer 102 is an aluminum indium gallium nitride (AlxGayln(1-x-y)N) layer, surface 102a can be thick by etching solution
Change, etching solution may be, for example, potassium hydroxide (KOH) solution.In addition, when the first conductive layer 102 is an AlGaInP
(AlxGayIn(1-x-y)P the solution of) layer, a hydrochloric acid (HCl) and phosphoric acid can be used for being roughened the surface 102a of the first conductive layer 102,
Coarsening time may be, for example, 15 seconds.The coarse surface 102a of first conductive layer 102 can reduce the possibility being totally reflected, and be used for
Increase the light extraction efficiency of light-emitting component.
Light-emitting component 10a, 10b, 10c provide sufficiently large contact shown in light-emitting component 10 and Fig. 1 D shown in Fig. 1 F
Area (half for preferably at least occupying 10 sectional area of light-emitting component), light-emitting component 10a, 10b, 10c utilize tin material
(solder) it 12 is directly connect with circuit board 13, without die bond (Die Bonding) and metal bracing wire (Wire
The processes such as Bonding).In one embodiment, light-emitting component 10a sends out feux rouges (R), light-emitting component 10b sends out green light (G), hair
Optical element 10c sends out blue light (B), and three connect the purposes shown for image with circuit board 13 respectively.
With reference to Fig. 2A to Fig. 2 D, for according to a kind of each rank of production method flow of light-emitting device array of the embodiment of the present invention
Sectional view corresponding to section.In fig. 2, a base material 21, such as a sapphire (Sapphire) base material, GaAs are provided first
(GaAs) base material or other base materials practised known to this operator are in combination.Then, multiple shine is formed on base material 21
Structure 200a, 200b and 200c.Light emitting structure 200a, 200b, it can refer to Figure 1A to Fig. 1 D with the material of 200c and production method
Light emitting structure 100.Similarly, light emitting structure 200a, 200b and 200c can pass through Metalorganic chemical vapor deposition
(MOCVD) manufacture craft, molecular beam epitaxy growth (molecular beam epitaxy, MBE) manufacture craft or hydride gas
The making such as phase epitaxy growth (hydride vapor phase epitaxy, HVPE) manufacture craft.
Then, as shown in Figure 2 B, formed a dielectric layer 222a in light emitting structure 200a on, formation one dielectric layer 222b in hair
On photo structure 200b, a dielectric layer 222c is formed on light emitting structure 200c.Preferably, dielectric layer 122 as shown in Figure 1B,
Dielectric layer 222a, 222b, 222c are a transparent dielectric layer, thus light emitting structure is effectively conducted in and its thickness D≤20 μm
It is hot caused by 200a, 200b, 200c.The material of dielectric layer 222a, 222b, 222c can be silica, silicon nitride or its etc.
Combination, and it can pass through MOCVD or MBE and make.
Later, referring to Fig. 2 C, formed dielectric layer 240a in dielectric layer 222a on, formation dielectric layer 240b is in dielectric layer 222b
Upper, formation dielectric layer 240c is on dielectric layer 222c.The material of dielectric layer 240a, 240b, 240c can be silica, nitridation
Silicon, polyimide (polyimide), BCB (bisbenzocyclobutene) and photoresist agent (photoresist)
Middle selection one.Preferably, the dielectric layer the 2nd 140 as shown in Fig. 1 C, the thickness difference of dielectric layer 240a, 240b, 240c
About 25 μm, and formed by a printing technology.In one embodiment, between light emitting structure 200a, 200b, 200c, more
A dielectric layer 280 is formed, for the light-emitting component 20a, 20b that is electrically insulated and 20c (as shown in Figure 2 D).In this embodiment, dielectric
The material identical of the material and dielectric layer 240a, 240b, 240c of layer 280, such as polyimide, and utilize a manufacture craft (example
Such as a printing technology) it is collectively formed with dielectric layer 240a, 240b, 240c.In another embodiment, the material of dielectric layer 280 is not
It is same as the material of dielectric layer 240a, 240b, 240c, and is formed by different manufacture crafts.
Referring to Fig. 2 D, metal layer 260a, 260b, 260c are formed；And form metal layer 262a, 262b, 262c.Metal layer
260a, 260b, 260c, 262a, 262b, can be selected from the material of 262c golden (Au), aluminium (Al), silver-colored (Ag) or its etc. alloy.
Preferably, metal layer 260a, 260b, 260c, 262a, 262b, be collectively formed by a printing technology or plating with 262c.
Via above-mentioned steps, that is, complete the light-emitting device array 20 with light-emitting component 20a, 20b, with 20c.
As shown in Fig. 2 E to Fig. 2 F, in one embodiment, light-emitting component 20a, 20b, sufficiently large contact surface is provided with 20c
Product, directly to be connect with circuit board 23 using tin material (solder) 22.So that base material 21 is detached with light-emitting device array 20 again, sends out
Optical component array 20 can show as image and be used.For example, being directly connected to light-emitting component 20a, 20b and 20c using tin material 22
After circuit board 23, the production method of light-emitting component also includes remove base material 21 the step of.Base material 11 may, for example, be
One sapphire substrate, and can be removed by excimer laser (excimer laser).Excimer laser can be one with energy
For 400 millijoules/square centimeter (mJ/cm2), wavelength is 248 nanometers and pulse width (pulse width) is 38 nanoseconds
(ns) cesium fluoride (KrF) excimer laser.In higher temperature, such as 60 DEG C, when excimer laser irradiation is in sapphire
When on base material, sapphire substrate is just removed to expose the first conductive layer 102.In addition, when base material 11 be GaAs base material, one
Ratio is 1:35 ammonium hydroxide (NH4OH) with hydrogen peroxide (H2O2) solution or a ratio be 5:3:5 phosphoric acid (H3PO4), mistake
Hydrogen oxide (H2O2) can be used for removing GaAs base material with the solution of water, for exposing the first conductive layer 102.
After removing base material 21, the production method of light-emitting device also includes the surface 102a of the first conductive layer 102 of roughening.Example
Such as, when the first conductive layer 102 is an aluminum indium gallium nitride (AlxGayln(1-x-y)N) layer, surface 102a can be thick by etching solution
Change, etching solution may be, for example, potassium hydroxide (KOH) solution.In addition, when the first conductive layer 102 is an AlGaInP
(AlxGayIn1-x-yP the solution of) layer, a hydrochloric acid (HCl) and phosphoric acid can be used for being roughened the surface 102a of the first conductive layer 102,
Coarsening time may be, for example, 15 seconds.The coarse surface 102a of first conductive layer 102 can reduce the possibility being totally reflected, and be used for
Increase the light extraction efficiency of light-emitting component.In one embodiment, as shown in Figure 2 G, a transparent encapsulation material 24 is for coating comprising hair
Optical element 20a, 20b, with the light-emitting device array 20 of 20c and connect circuit board 23, and then form light-emitting element package 25,
Middle transparent encapsulation material 24 may be, for example, the suitable material known to epoxy resin or other prior art persons.
With reference to Fig. 3 A to Fig. 3 G, for according to a kind of each stage institute of the production method flow of light-emitting device of the embodiment of the present invention
Corresponding sectional view.Referring to Fig. 3 A, a base material 21 is provided, is monocrystalline and includes sapphire, GaAs, gallium nitride or silicon；Outside
Prolong one first conductive layer 102 of growth on base material 21, the first conductive layer 102 is as a clad；Epitaxial growth one includes multiple
The active layer 104 of Quantum Well (Multiple Quantum Well, MQW) structure is on the first conductive layer 102, wherein active layer
104 are used as a luminescent layer；And one second conductive layer 106 of epitaxial growth is on active layer 104, wherein the second conductive layer 106 is done
For another clad.Then, the first conductive layer 102, active layer 104 and the second conductive layer 106 are etched with the shape on base material 21
At multiple luminous laminations 101 being separated from each other by groove (figure do not mark), and in each luminous lamination 101, a part of the
One conductive layer 102 is exposed.Then, a protective layer 120, and 120 covering part of protective layer are formed on each luminous lamination 101
The first conductive layer 102, the second conductive layer 106 of part and the one side wall of luminous lamination 101 divided.Then, in every 1 first
The electrode or joint sheet 107a that setting one is electrically connected with the first conductive layer 102 on the naked position of conductive layer 102, and in every
The electrode or joint sheet 107b that setting one is electrically connected with the second conductive layer 106 on one second conductive layer 106.
Later, referring to Fig. 3 B, a reflecting layer 221 is set on each protective layer 120, and on each protective layer 120
Form first dielectric layer 122 in a covering reflecting layer 221.For the light that the lamination 101 that shines is sent out, reflecting layer 221 has first-class
It is same as or the reflectivity more than 80%.The material in reflecting layer 221 includes metal, such as silver, silver alloy, aluminum or aluminum alloy.
In one embodiment, the material in reflecting layer 221 includes the macromolecule for being mixed with inorganic particulate, and wherein inorganic particulate is by metal oxide group
It is formed at the material by being equal to reflectivity or more than 1.8, the material in reflecting layer 221 is, for example, to be mixed with titanium oxide grain
The epoxy resin of son.Each reflecting layer 221 is fully covered by corresponding protective layer 120 and the first dielectric layer 122, is used for
Be electrically insulated each reflecting layer 221 and corresponding luminous lamination 101.In another embodiment, protective layer 120 is omitted,
And reflecting layer 221 be directly formed on the second conductive layer 106 and electrical connection the second conductive layer 106.Later, as shown in Figure 3 C,
On base material 21 and between groove and in forming one second dielectric layer 240, and each second dielectric on each luminous lamination 101
The corresponding electrode of 240 exposure of layer or joint sheet 107a and electrode or joint sheet 107b.Later, in every 1 second dielectric layer
Between 240 and in forming a first metal layer 260 and a second metal layer on corresponding first dielectric layer 122 of part
262.The first metal layer 260 and second metal layer 262 be respectively formed in corresponding electrode or joint sheet 107a and electrode or
On joint sheet 107b.The first metal layer 260 and the material of second metal layer 262 include gold, aluminium, silver or its etc. alloy.
In one embodiment, the first metal layer 260 and second metal layer 262 are collectively formed by a printing technology or plating.
As shown in Figure 3D, second dielectric layer 240 of the patterning between adjacent luminous lamination 101 is used in the second dielectric
240 inner formation groove of layer, groove expose the base material 21 of a part and separate the second dielectric layer 240 to form dielectric layer 240a,
A light non-transmittable layers 290 are formed later in groove.In one embodiment, light non-transmittable layers 290 are inhaled as a reflecting layer or a light
Layer is received, is sent out by neighbouring luminous lamination 101 for reflecting or absorb light that corresponding luminous lamination 101 is sent out and avoiding
Light interacts or generates crosstalk (crosstalk).For the light that corresponding luminous lamination 101 is sent out, light non-transmittable layers 290 have
One is less than 50% penetrance (transmittance).The material of light non-transmittable layers 290 includes metal or comprising being mixed with inorganic grain
The macromolecule of son, wherein inorganic particulate are made of the material by being equal to reflectivity or more than 1.8 metal oxide
The material of composition, reflecting layer 221 is, for example, the epoxy resin for being mixed with Titanium particles.So far, including a plurality of light-emitting elements 300
Light-emitting device array 30 completes.As shown in FIGURE 3 E, a circuit board 23 is provided, it is multiple positioned at circuit board 23 it includes having
Upper surface and lower surface metal contact 22 and include multiple conductive channel 22a through circuit board 23, wherein
Conductive channel 22a can connect the contact of the metal on the upper surface of circuit board 22 and on the lower surface of circuit board
Metal contact 22.In one embodiment, circuit board 23 includes tin material (solder).Circuit board 23 includes FR-4, BT
(Bismaleimide-Triazine) resin, ceramics or glass.The thickness of circuit board 23 between 50 to 200 microns with
Light-emitting component is supported enough and still there is small size.Light-emitting device array 30 is by being directed at the first gold medal of each light-emitting component 300
Belong to layer 260 to contact 22 to corresponding metal with second metal layer 262 and connect with circuit board 23 directly in the form of upside-down mounting.Value
It is noted that metal contacts the region other than 22 and is formed with gap between light-emitting device array 30 and circuit board 23.
In addition it is optionally filled in gap with packing material to promote strength of connection and mechanical support.Connect light-emitting component battle array
Row 30 remove the base material 21 of light-emitting device array 30 with after circuit board 23.In one embodiment, base material includes sapphire,
The lamination 101 that shines includes gallium nitride, and the method for removing base material 21 is contained in higher temperature, such as 60 DEG C, using surely
Molecular laser is radiated at the interface of the first conductive layer 102 and base material 21, then separation substrate 21 and the first conductive layer 102.Standard point
It is 400 millijoules/square centimeter (mJ/cm that sub- laser can have energy for one2), wavelength be 248 nanometers and pulse width
(pulse width) is cesium fluoride (KrF) excimer laser of 38 nanoseconds (ns).In another embodiment, when base material 21 is arsenic
Change gallium base material, it is 1 that the method for removing base material 21, which includes using a ratio,:35 ammonium hydroxide (NH4OH) with hydrogen peroxide (H2O2) it is mixed
It is 5 with object or a ratio:3:5 phosphoric acid (H3PO4), hydrogen peroxide (H2O2) can be complete for being etched to the mixture of water
Base material 21 is removed entirely and exposes the first conductive layer 102, dielectric layer 240a and the light non-transmittable layers 290 of each light-emitting component 300.
As illustrated in Figure 3 F, after removing base material 21, the production method of light-emitting device further includes the first conductive layer 102 of roughening
Exposed surface.In one embodiment, the first conductive layer 102 includes aluminum indium gallium nitride (AlxGayln(1-x-y)N, wherein 0≤x, y
≤ 0) potassium hydroxide (KOH) solution, can be used to etch the surface of the first conductive layer 102 exposure to form a coarse surface 102a.
In another embodiment, the first conductive layer 102 includes AlGaInP (AlxGayIn(1-x-y)P), can be used hydrochloric acid (HCl) or
Be phosphoric acid solution etch the first conductive layer 102 exposure surface to form a coarse surface 102a, coarsening time may be, for example,
15 seconds.The coarse surface 102a of every 1 first conductive layer 102 can reduce the possibility that the light in each light-emitting component 300 is totally reflected
Property, the light extraction efficiency for increasing light-emitting component.After roughening step, multiple sunk areas be located at coarse surface 102a and
Substantially it is surround by dielectric layer 240a.In one embodiment, in order to which the RGB for forming the die-level that one is used for display shines
Cell, the production method of the present embodiment is optionally in being coated with a first wave length conversion layer 294 on light-emitting component 300b
With conversion light, as illustrated in Figure 3 F.For example, the luminous lamination 101 of light-emitting component 300b, the main wavelength sent out is received between 430
Rice is converted into the first conversion light to the blue light between 470 nanometers, and for example, one has main wavelength between 610 nanometers to 690
Feux rouges between nanometer.Further, a second wave length conversion layer 296 is optionally coated on light-emitting component 300c and is used for
The light-emitting component 300c light sent out is converted into one second conversion light, for example, one have main wavelength between 500 nanometers extremely
Green light between 570 nanometers.Light-emitting component 300a and uncoated any wavelength conversion material, with direct self-emission device 300a's
Coarse surface 102a sends out blue light.In one embodiment, first or second wavelength conversion layer is by assembling nano level quantum dot
(quantum dot) or nano level fluorescent powder pass through a gluing layer (figure to form one with the substantially consistent film of thickness
Do not show) it is linked to luminous lamination 101.In another embodiment, first or second wavelength conversion layer includes to have nano level amount
Son point or nano level fluorescent powder, average diameter or average feature length are between 10 nanometers to 500 nanometers.Each receive
The length or characteristic length of the quantum dot of meter level or nano level fluorescent powder are substantially less than 1000 nanometers.Nano level quantum
Point includes semi-conducting material, such as one there is group to become ZnxCdyMgl-x-yII- V I (two/six) compound semiconductor of Se,
Wherein x and y can be tuned as sending out green or feux rouges after making II- V I (two/six) compound semiconductor light excite." feature is long
Degree " is defined as the maximum distance of a fluorescent powder or a quantum dot appointed between two-end-point.Later, by for example, epoxy resin or
It is that the transparent encapsulation material 24 of silica resin (silicone) is coated on the upper surface of light-emitting device array 32 with by wavelength convert
Material is fixed on luminous lamination 101, and the optical lens of light-emitting component 300a, 300b, 300c as light-emitting device array 32.
In another embodiment, the material of the wavelength conversion layer of covering luminous element 300a, 300b, 300c is identical.
Fig. 4 A are the vertical view that light-emitting device array 32 as illustrated in Figure 3 F is connect in the form of upside-down mounting with circuit board 23.
Both light-emitting device array 32 and circuit board 23 are the wafer format with same or like size.Light-emitting device array 32
It is contained in the multiple RGB light-emitting components group for interlocking in two-dimensional space and being continuously arranged, and the position enclosed as dashed lines
Shown, each group includes a light-emitting component 300a, a light-emitting component 300b and a light-emitting component 300c.
Finally, it executes cutting (dicing) step and cuts light-emitting device array 32 and circuit board 23 simultaneously, formed
The RGB light-emitting device unit 35 of the RGB light-emitting device unit 35 of multiple die-levels as shown in Figure 3 G, each die-level is wrapped
The blue light emitting device 300a of blue light is sent out containing one, a red light-emitting component 300b and one for sending out feux rouges sends out the green of green light
Color light-emitting component 300c.The RGB light-emitting device unit 35 of die-level is that a kind of be free of encapsulates and be a kind of SMD LED surface-mount device LED
Device, also that is, after the cutting step, do not need traditional encapsulation step can directly with a printed circuit carrier plate gluing.Thoroughly
Bright encapsulating material 24 jointly covering luminous element 300a, 300b and 300 and be not extend to light-emitting component 300a, 300b and
The side wall of 300c.In one embodiment, cutting (dicing) step cuts light-emitting device array 32 and circuit board 23 simultaneously
To form the RGB light-emitting device unit of multiple die-levels, wherein the RGB light-emitting device unit of each die-level includes multiple
RGB light-emitting component group.Multiple RGB light-emitting components group is in a RGB light-emitting device unit with I*J arrays
Arrangement, wherein I and J are positive integers, and at least one are greater than 1 in I and J.The ratio of I and J is preferably close or is equal to
1/1,3/2,4/3 or 16/9.
It is that the RGB light-emitting device unit 35 of die-level includes RGB light-emitting component as shown in Figure 3 G with reference to Fig. 4 B
Group.The RGB light-emitting device unit 35 of die-level be for the first rectangle with one first long side and one first short side,
The first length S2 that wherein the first short side is more than the first width S 1 with one first width S 1 and the first long side with one.Each hair
Light lamination 101 is the second rectangle with one second long side and one second short side, wherein the second short side has one second width
D1 and the second long side have a second length d2 for being more than the second width d1.Second short side of luminous lamination 101 is substantially arranged
In the RGB light-emitting device unit 35 for being parallel to die-level the first long side or be substantially set to perpendicular to the red of die-level
First short side of turquoise light-emitting device unit 35.In one embodiment, RGB light-emitting device unit 35 can be used as indoor display
One pixel of tablet.In order to make that there is the TV display that diagonal line is 40 inches and pixel resolution is 1024*768 all to make
It need to be less than about 0.64 square millimeter of (mm with the area of light-emitting component pixel, each pixel2).Therefore, RGB light-emitting component list
The area of member 35 may be, for example, less than 0.36mm2.First length S2 and the first width S 1 are smaller than 0.6 millimeter, and RGB
The length-width ratio of light-emitting device unit 35, that is, S2/S1, preferably less than 2/1.According to disclosed herein embodiment, first
The distance between metal layer 260 and second metal layer 262, that is, the first distance S3, are limited to light-emitting device array and electricity
Contraposition control of the road-load plate in Connection Step.First distance S3 is equal to or is more than 25 microns (micron) and micro- less than 150
Rice, for ensuring manufacture craft tolerance and providing enough as conductive contact area.RGB light-emitting device unit 35
The distance between the wherein one luminous lamination 101 at a wherein edge and RGB light-emitting device unit 35, that is, second distance S4,
It is limited to the tolerance of cutting step.Second distance S4 is equal to or more than 25 microns and less than 60 micron, for ensuring cutting step
The advantages of rapid tolerance and maintenance small size.The distance between two adjacent light emitting elements, that is, third distance S5 is limited to
Photolithographic etching step, and it is less than 50 microns, or preferably less than 25 microns, it is more for retaining between luminous lamination 101
Area.For each luminous lamination 101 in RGB light-emitting device unit 35, the second width d1 is between 20 to 150 microns
Between and the second length d2 between 20 to 550 microns.The area of RGB light-emitting device unit 35 and luminous lamination 101
The ratio of the gross area is less than 2 or between 1.1 to 2, and is preferably ranges between 1.2 to 1.8.The area of luminous lamination 101
Depending on required brightness and Pixel Dimensions.It is worth noting that, the shape of RGB light-emitting device unit 35 also can be four
Side square all identical with the first width S 1.In an embodiment, a pixel includes two RGB light-emitting device units 35,
One of them is used for normal operating, another is used for spare 35 failure of RGB light-emitting device unit to prevent normal operating.The
One width S 1 is preferably less than 0.3 millimeter, for making two RGB light-emitting device units 35 be set in a pixel.This hair
Bright advantage is, pixel element of the light-emitting component as a flat-surface television may be implemented, and resolution ratio can more be promoted to picture
Plain resolution ratio is twice or four times of 1024*768.In another embodiment, a RGB light-emitting device unit 35 includes two
A RGB light-emitting component group, one of them is used for normal operating, another is used for the spare RGB to prevent normal operating
Light-emitting component group failure.
With reference to Fig. 5 A to Fig. 5 C, for according to a kind of light-emitting device unit of die-level of the embodiment of the present invention, manufacturer
Method and structure are similar to embodiment shown in Fig. 3 A to Fig. 3 G and relevant disclosure, and different places are, in cutting
Before cutting step, light-emitting device array 34 includes multiple identical light-emitting component 300d, as shown in Figure 5A.Each light-emitting component
300d is coated with identical or different wavelength conversion layer 298, and wavelength conversion layer 298 is used to convert the hair of corresponding light-emitting component 300d
The light that light lamination 101 is sent out, for example, blue light of the main wavelength between 430 nanometers to 470 nanometers is converted to yellow light, green
Light or conversion light from light.It is to include the hair of the die-level of single light-emitting component after cutting step with reference to Fig. 5 B and Fig. 5 C
The vertical view and sectional view of photo-element unit cell 36.The size of the light-emitting device unit 36 of die-level and die-level shown in Fig. 4 B
RGB light-emitting device unit 35 size it is similar or identical.The light-emitting device unit 36 of die-level is with one first long side
And one first short side the first rectangle, wherein the first long side have the first length S1, and the first short side have be less than first length
Spend the first width S 6 of S1.Each luminous lamination 101 is the second rectangle with one second long side and one second short side, wherein
Second short side is with one second width d1 and the second long side is with a second length d2 more than the second width d1.Shine lamination
101 the second short side is substantially set to the first short side or substantial for the RGB light-emitting device unit 36 for being parallel to die-level
It is set to the first long side of the RGB light-emitting device unit 36 perpendicular to die-level.In an embodiment, RGB shines first
Part unit 36 is a portion for the pixel of an indoor display tablet.The area of RGB light-emitting device unit 36 can
For example, it is less than 0.12mm2.First length S1 and the first width S 6 are smaller than 0.2 millimeter, and RGB light-emitting device unit
36 length-width ratio, that is, S1/S6, preferably less than 2/1.According to the present invention, the first metal layer 260 and second metal layer 262
The distance between, that is, the first distance S3, it is limited to the contraposition control of light-emitting device array and circuit board in Connection Step
System.First distance S3 be equal to or more than 25 microns and be less than 150 microns, with ensure manufacture craft tolerance and provide enough as
Conductive contact area.A wherein edge for RGB light-emitting device unit 36 and its distance between lamination 101 that shines, also
That is second distance S4 is limited to the tolerance of cutting step.Second distance S4 is equal to or more than 25 microns and less than 60 micron, uses
In the tolerance that ensures cutting step and the advantages of maintain small size.For in the RGB light-emitting device unit 36 of die-level
It shines for lamination 101, the second width d1 is between 20 to 150 microns and the second length d2 is between 20 to 550 microns.Pipe
The area of the RGB light-emitting device unit 36 of core grade and the total area ratio of luminous lamination 101 be less than 2 or between 1.1 to 2 it
Between, and be preferably ranges between 1.2 to 1.8.The area of luminous lamination 101 depends on required brightness and Pixel Dimensions.Value
It obtains it is noted that the shape of RGB light-emitting device unit 36 also can be four sides square all identical with the first width S 6.Phase
As, the shape for the lamination 101 that shines also can be four sides square all identical with the second width d1.In an embodiment, a picture
Element includes the RGB light-emitting device unit 36 of at least three die-levels, for sending out blue, red and green light.
With reference to Fig. 5 D to Fig. 5 E, for according to a kind of light-emitting device unit of die-level of the embodiment of the present invention, manufacturer
Method and structure are similar to embodiment shown in Fig. 5 A to Fig. 5 C and relevant disclosure, and different places are, impermeable
Photosphere 290 optionally omits.RGB light-emitting device unit 36 ' is that direct surface is attached to the light for being contained in a lamps and lanterns
Plate.The area of luminous lamination 101 depends on the size of required brightness and tabula rasa or lamps and lanterns.For being, for example, less than 0.3 watt
For the application of low-power, the area of the luminous lamination 101 of RGB light-emitting device unit 36 ' is 100mil2To 200mil2, right
For the application of the middle power for example between 0.3 to 0.9 watt, the luminous lamination 101 of RGB light-emitting device unit 36 '
Area be 201mil2To 900mil2, for the high-power application for example higher than 0.9 watt, RGB light-emitting component list
The area of the luminous lamination 101 of member 36 ' is more than 900mil2.It can be used as around the dielectric layer 240a of luminous lamination 101 and take out light
The coupled lens (coupling lens) of the light-emitting device unit 36 ' of die-level.The face of the light-emitting device unit 36 ' of die-level
Product and the ratio of the area of luminous lamination 101 are equal to or more than 9, and preferably equal to or greater than 15, for having preferred light
Extraction efficiency and light dispersibility.In the present invention, the distance between the first metal layer 260 and second metal layer 262, that is,
First distance S3 ' is limited to the contraposition control of light-emitting device array and circuit board in Connection Step.First distance S3 '
It is equal to or more than 25 microns and less than 150 microns, is connect enough as conductive for ensuring manufacture craft tolerance and providing
Contacting surface is accumulated.It is worth noting that, the shape of the light-emitting device unit 36 ' of die-level also can be four sides all with 6 ' phase of the first width S
Same square.Likewise, the shape for the lamination 101 that shines also can be four sides all identical squares with the second width d1 '.First
Width S 6 ' is identical as the second width d1 ' or more than three times of the second width d1 ', it is preferable that the first width S 6 ' and second wide
It is identical or four times more than the second width d1 ' to spend d1 ', so that there is the light-emitting device unit 36 ' of die-level preferred light to take
Go out efficiency.In an example, dielectric layer has different thickness in the side wall for the lamination 101 of shining, thus the first width S 6 ' with
The first ratio (S6 '/d1 ') of second width d1 ' be different from the first length S1 ' and the second length d2 ' the second ratio (S1 '/
D2 '), to reach when operation, the light-emitting device unit 36 ' of die-level is overlooked, the characteristic with asymmetric light field.This
Outside, the first ratio is at least twice of the second ratio, or four times of preferably the second ratio.
With reference to Fig. 6 A, for according to the sectional view of the RGB light-emitting device unit 65 of a die-level of the embodiment of the present invention,
Its manufacturing method and structure are similar to embodiment shown in Fig. 3 A to Fig. 3 G and relevant disclosure, and different places exists
In a packing material 680 is filled in light-emitting device array 32 ' and electricity comprising light-emitting component 300a ', 300b ' and 300c '
Gap between road-load plate 23, the electricity between bonding strength and offer circuit board and light-emitting component for improving the two
Flow path.Packing material 680 includes different side's conducting resinl (anisotropic conductive film, ACF), has and is sending out
Electric current is conducted with vertical-path between optical component array 32 ' and circuit board 23 and is carried in light-emitting device array 32 ' and circuit
To be parallel to the ability of the lateral path insulation current of light-emitting device array 32 ' or circuit board between plate 23.Packing material 680
It is coated on circuit board 23 before connection light-emitting device array to circuit board 23.In an embodiment, the first metal layer
260 ' and second metal layer 262 ' all not in contact with the metal of circuit board 23 contact 22.Packing material 680 is located at the first metal
Layer 260 ', between second metal layer 262 ' contacts 22 with metal, be used for the first metal layer 260 ', second metal layer 262 ' and
Electric current is conducted between metal contact 22.The first metal layer 260 ' and second metal layer 262 ' are patterned, therefore in face of gold
The surface for belonging to contact 22 is a coarse surface with multiple recess portions and protrusion.Therefore light-emitting device array and circuit board
Contact area increases, and the bonding strength of light-emitting device array and circuit board is also promoted.Multiple recess portions and protrusion have rule
Shape or irregular shape, and surface roughness (Ra) is between 0.5 to 5 micron.Using different side's conducting resinl as filling
Material the advantages of be the distance between the first metal layer 260 ' and second metal layer 262 ', i.e., as shown in Figure 4 B first away from
From S3, it is smaller than 25 microns.
Fig. 6 B are the schematic diagram of single light-emitting component 300d ' in light-emitting device array 32 ' shown in Fig. 6 A.Packing material
680 and the patterned surface of the first metal layer 260 ' and second metal layer 262 ' can also be applied to such as Fig. 5 A to Fig. 5 C institutes
The embodiment shown is used to form structure as shown in Figure 6B.Packing material 680 is filled in light-emitting component 300d ' and circuit carries
Gap between plate 23, to improve the bonding strength of the two and provide the current path between circuit board and light-emitting component.
Packing material 680 includes anisotropy conductiving glue (anisotropic conductive film, ACF), is had in the member that shines
With vertical-path conduction electric current and between light-emitting component 300d ' and circuit board 23 between part 300d ' and circuit board 23
To be parallel to the ability of the lateral path insulation current of light-emitting component 300d ' or circuit board.Packing material 680 shines in connection
It is coated on circuit board 23 before element arrays to circuit board 23.In an embodiment, the first metal layer 260 ' and
Two metal layers 262 ' are all not in contact with the metal of circuit board 23 contact 22.Packing material 680 is located at the first metal layer 260 ', second
Between metal layer 262 ' contacts 22 with metal, for contacting 22 in the first metal layer 260 ', second metal layer 262 ' and metal
Between conduct electric current.The first metal layer 260 ' and second metal layer 262 ' are patterned, therefore in face of metal contact 22
There are multiple recess portions and protrusion on surface.Therefore the contact area of light-emitting component and circuit board increases, light-emitting component is carried with circuit
The bonding strength of plate is also promoted.Multiple recess portions and protrusion have regular shape or irregular shape, and surface roughness
(Ra) between 0.5 to 5 micron.Similarly, packing material 680 and the first metal layer 260 ' and second metal layer 262 '
Patterned surface can also be applied to above-mentioned embodiment as shown in fig. 5e, to form structure as shown in Figure 6 C.
With reference to Fig. 7 A to Fig. 7 G, for according to a kind of each stage institute of the production method flow of light-emitting device of the embodiment of the present invention
It the step of corresponding sectional view, wherein Fig. 7 A to Fig. 7 D and structure and embodiment shown in Fig. 2A to Fig. 2 D and relevant takes off
Show that content is similar, the step of Fig. 7 F to Fig. 7 G and structure and embodiment and relevant disclosure shown in Fig. 3 E to Fig. 3 F
Similar, different places are, as seen in figure 7 c, dielectric layer 240a, 240b, 240c, 280 are a photoresist agent, such as
It is positive photoresist agent or negative photoresist agent；As shown in Fig. 7 D to Fig. 7 E, in formed metal layer 260a, 260b,
260c and formed after metal layer 262a, 262b, 262c, the production method further include remove dielectric layer 240a, 240b,
240c, 280, therefore gap is formed between two adjacent light-emitting components and between the metal layer of single light-emitting component；Such as figure
Shown in 7F to Fig. 7 G, after removing base material 21, two adjacent light-emitting components by gap to be separated from each other, and the making side
Method further includes the surface of roughening the first conductive layer 102 exposure to form a coarse surface 102a, the method for roughening as previously mentioned,
This is just repeated no more.In an embodiment, in order to form the red green of a die-level (chip-scale) for showing or illuminating
Blue light-emitting component, production method is optionally in being coated with a first wave length conversion layer 294 on light-emitting component 300b, such as Fig. 7 G
It is shown, the light-emitting component 300b light sent out is converted into one first conversion light.Further, a second wave length conversion layer
296 light for being optionally coated on light-emitting component 300c for being sent out light-emitting component 300c are converted to one second conversion
Light.Light-emitting component 300a and uncoated any wavelength conversion material, with the coarse surface 102a hairs of direct self-emission device 300a
Go out blue light.Generation type and the material of each conversion layer are as previously mentioned, details are not described herein.Fig. 7 H are according to the embodiment of the present invention
The RGB light-emitting device unit of die-level include the vertical view of RGB light-emitting component group as shown in Figure 7 G, RGB
It is first width S 1 of light-emitting device unit 37, the first length S2, the second length d2, the first distance S3, second distance S4, second wide
It spends described in d1, third distance S5 embodiments as shown in Figure 4 B and relevant disclosure, details are not described herein, different ground
Side is that the lamination 101 that shines is not surround by dielectric layer 240a and light non-transmittable layers 290.In formation first wave length conversion layer 294
And after second wave length conversion layer 296, it is not required to the transparent encapsulation material 24 of coating previous embodiment, directly executes cutting
(dicing) step with direct clipper circuit support plate 23 without via cutting light-emitting device array 32, form multiple die-levels
RGB light-emitting device unit.It is to include the hair of the die-level of single light-emitting component after cutting step with reference to Fig. 7 I and Fig. 7 J
The sectional view and vertical view of photo-element unit cell 37.First length S1 of the light-emitting device unit 37 of die-level, the first width S 6,
It second width d1, the second length d2, the first distance S3 and second distance S4 embodiments as shown in Figure 5 B and relevant takes off
Show that described in content, details are not described herein, different places is, shine lamination 101, the first metal layer 260 and the second metal
The side wall of layer 262 does not have dielectric layer 240a and light non-transmittable layers 290；In addition, not having transparent enclosure on wavelength conversion layer 298
Material 24.
With reference to Fig. 8 A, for according to a kind of display module 76 of the embodiment of the present invention, it includes multiple second circuits that are located to carry
The RGB light-emitting device unit 65 of die-level on plate 73.For example, the RGB light-emitting component of any two adjacent die-levels
Unit 65 is both to be separated from each other by a spacing or be seamlessly arranged and make to contact with each other.Second circuit support plate 73 includes circuit
72, circuit 72 is electrically connected with each light-emitting component of RGB light-emitting device unit 65, for each RGB hair of independent control
Blue, red and green luminousing element in photo-element unit cell 65.In an embodiment, display module 76 includes M row and N rows
The RGB light-emitting device unit 65 of die-level is for a display with X*Y pixel resolutions, wherein M/N=1/1,3/
2,4/3 or 16/9, X=a*M, Y=b*N, and a and b are all the positive integer equal to or more than 2.Display module 76 is in one square
In the area of English inch, 500 RGB light-emitting device units 65 are comprised more than.That is, display module 76 is flat in one
In the area of square English inch, 1500 luminous laminations 101 are comprised more than.In another embodiment, the RGB of each die-level
Light-emitting device unit includes multiple RGB light-emitting components group, and each group is as described above, including a blue-light-emitting is first
Part, a red light-emitting component and a green luminousing element.Multiple RGB light-emitting components group is red green in die-level
It is arranged with I*J arrays in blue light-emitting device unit, wherein I and J are positive integers, and at least one are greater than 1 in I and J.I's and J
Ratio is preferably close or equal to 1/1,3/2,4/3 or 16/9.In the RGB light-emitting device unit of a die-level, point
Two adjacent the distance between the luminous laminations for not coming from two adjacent RGB light-emitting component groups, substantially equal to distinguish
Come from two adjacent the distance between luminous laminations of the RGB light-emitting device unit of two adjacent die-levels.Display module
The RGB light-emitting device unit 65 of 76 die-levels comprising M row and N rows is for a display with X*Y pixel resolutions
Device, wherein M/N=1/1,3/2,4/3 or 16/9, X=a*M*I, Y=b*N*J, and a and b are all just whole equal to or more than 2
Number.Display module 76 comprises more than 500 RGB light-emitting component groups in the area of one square of English inch.Namely
It says, display module 76 comprises more than 1500 luminous laminations 101 in the area of one square of English inch.Each RGB shines
Each light-emitting component in cell and RGB light-emitting device unit can all pass through circuit board 23 and second circuit
The circuit formed on support plate 73 independently drives.The material class of second circuit support plate 73 also FR-4, BT (Bismaleimide-
Triazine) resin, ceramics or glass.Fig. 8 B are the schematic diagram according to a kind of lighting module 78 of the embodiment of the present invention.According to
Bright module 78 includes the light-emitting device unit 66 of multiple die-levels on second circuit support plate 73.According to the driving electricity applied
Pressure, the light-emitting device unit 66 of die-level can be connected by the circuit on second circuit support plate 73 or parallel way connection.
In an embodiment, lighting module 78 is arranged at just like in light bulb 80 shown in Fig. 9.Light bulb 80 further includes covering photograph
The optical lens 82 of bright module 78, one with the radiating groove 85 that a connection surface and lighting module 78 are positioned at connection surface, and one
The electric connector that the linking part 87 and one being connect with radiating groove 85 connect with linking part 87 and is electrically connected with lighting module 78
88。
Embodiment described above is merely illustrative of the invention's technical idea and feature, and purpose makes to be familiar with technique
Personage can understand the content of the present invention and implement it accordingly, cannot with restriction the present invention the scope of the claims, i.e., generally according to this
Equivalent change or modification made by revealed spirit are invented, should be covered in the scope of the claims of the present invention.
Claims (10)
1. a kind of light-emitting device array, which is characterized in that include：
First light-emitting component, including the first luminous lamination；
Second light-emitting component, including the second luminous lamination；
First wave length conversion layer, be located at the first luminous lamination on, second wave length conversion layer be located at the second luminous lamination it
On；
The first metal layer is located under the first luminous lamination, and second metal layer is located under the second luminous lamination；And
Dielectric layer, between first light-emitting component and second light-emitting component；
Wherein, the dielectric layer around first light-emitting component, second light-emitting component, the first metal layer, the second metal layer,
The first wave length conversion layer and the second wave length conversion layer.
2. light-emitting device array as described in claim 1 is also located at first light-emitting component comprising light non-transmittable layers and is somebody's turn to do
Between second light-emitting component.
3. light-emitting device array as claimed in claim 2, wherein the light non-transmittable layers around first light-emitting component, this second
Light-emitting component, the first metal layer, the second metal layer, the first wave length conversion layer and the second wave length conversion layer.
4. light-emitting device array as claimed in claim 2, wherein the light non-transmittable layers are surrounded by the dielectric layer.
5. light-emitting device array as described in claim 1, wherein the first wave length conversion layer and the second wave length conversion layer phase
Separation.
6. light-emitting device array as described in claim 1, wherein the first wave length conversion layer is with the second wave length conversion layer
With the substantially consistent film of thickness.
7. light-emitting device array as claimed in claim 6, also comprising gluing layer be located at the first wave length conversion layer with this
Between one luminous lamination.
8. light-emitting device array as described in claim 1 is also located at the first wave length conversion layer comprising transparent encapsulation material
On the second wave length conversion layer.
9. light-emitting device array as described in claim 1, wherein the first metal layer respectively has one with the second metal layer
Lower surface is exposed to except the dielectric layer.
10. a kind of light-emitting device, which is characterized in that include light-emitting device array as described in claim 1 and circuit board
Under the first luminous lamination and the second luminous lamination, which has identical or class with the light-emitting device array
Like size.
Applications Claiming Priority (3)
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| US14/082,960 US9018655B2 (en) | 2005-02-03 | 2013-11-18 | Light emitting apparatus and manufacture method thereof |
| US14/082,960 | 2013-11-18 | ||
| CN201410663642.XA CN104659162A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and manufacture method thereof |
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|---|---|---|---|
| CN201410663642.XA Division CN104659162A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and manufacture method thereof |
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| CN108321272A true CN108321272A (en) | 2018-07-24 |
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| CN201410663642.XA Pending CN104659162A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and manufacture method thereof |
| CN202010934163.2A Pending CN112164737A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201811153499.4A Active CN109585620B (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201810094042.4A Pending CN108321272A (en) | 2013-11-18 | 2014-11-18 | Light-emitting device and preparation method thereof |
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| CN201410663642.XA Pending CN104659162A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and manufacture method thereof |
| CN202010934163.2A Pending CN112164737A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201811153499.4A Active CN109585620B (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112164737A (en) | 2021-01-01 |
| CN109585620A (en) | 2019-04-05 |
| CN104659162A (en) | 2015-05-27 |
| TW201907586A (en) | 2019-02-16 |
| TW201521239A (en) | 2015-06-01 |
| TWI706579B (en) | 2020-10-01 |
| TW202218190A (en) | 2022-05-01 |
| CN109585620B (en) | 2022-07-01 |
| TWI711190B (en) | 2020-11-21 |
| TW201810722A (en) | 2018-03-16 |
| CN108198807A (en) | 2018-06-22 |
| TWI715885B (en) | 2021-01-11 |
| TWI808610B (en) | 2023-07-11 |
| TWI663749B (en) | 2019-06-21 |
| TW201631800A (en) | 2016-09-01 |
| TWI755825B (en) | 2022-02-21 |
| TW202046517A (en) | 2020-12-16 |
| TW201921732A (en) | 2019-06-01 |
| TWI542045B (en) | 2016-07-11 |
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