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CN108321000B - 一种用于自均压式多断口真空断路器的真空灭弧室 - Google Patents

一种用于自均压式多断口真空断路器的真空灭弧室 Download PDF

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CN108321000B
CN108321000B CN201810337488.5A CN201810337488A CN108321000B CN 108321000 B CN108321000 B CN 108321000B CN 201810337488 A CN201810337488 A CN 201810337488A CN 108321000 B CN108321000 B CN 108321000B
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ceramic shell
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CN108321000A (zh
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廖敏夫
卢刚
段雄英
张豪
张晓莉
黄智慧
邹积岩
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Dalian University of Technology
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Abstract

本发明属于高压真空开关领域，涉及一种用于自均压式多断口真空断路器的真空灭弧室，真空灭弧室包括上端盖、静触头、BST陶瓷壳、屏蔽罩、动触头、波纹管屏蔽罩、波纹管和下端盖。所述的BST陶瓷壳为柱状中空结构，上端盖和下端盖分别与BST陶瓷壳上下两端密闭连接，构成真空密闭空间；所述的屏蔽罩置于BST陶瓷壳内，静触头与上端盖的下端面连接；动触头的下端轴穿透下端盖，其下端轴上套有与下端盖连接的波纹管。本发明基于这种自均压式真空灭弧室构成的多断口真空断路器，可以在无均压电容的条件下，实现各个断口之间电压均匀分布，提高了多断口真空断路器的开断能力。这种自均压式多断口真空断路器用真空灭弧室结构简单，便于实现。

Description

一种用于自均压式多断口真空断路器的真空灭弧室
技术领域
本发明属于高压真空开关领域，涉及一种用于自均压式多断口真空断路器的真空灭弧室。
技术背景
采用多个断口串联的方式是避免真空间隙的饱和效应，将真空断路器向高电压等级推广的一个有效措施。各断口间的电压分布对断路器的整体绝缘强度和开断能力具有重要影响，而各断口之间的承受的电压与其等效自电容值有很大关系。由于杂散电容的存在，即使用两个完全相同的商用真空灭弧室构成的双断口真空断路器，其高压侧断口承受的电压也要较低压侧断口高。一般在双断口真空断路器中，高压侧断口承受了近70％的总电压。在开断短路电流过程中，承受较高电压的断口可能发生击穿。在这种情况下，如果低压侧断口无法承受全部的恢复电压，那么低压侧断口也会相继发生击穿，从而导致整个断路器开断失败。
目前多断口真空断路器领域中解决电压分布不均的措施是在断口两端并联均压电容。然而，并联均压电容一方面了提高了多断口真空断路器的成本，另一方面降低了系统的安全性与可靠性。均压电容在长期运行过程中，绝缘劣化造成事故发生，如2005年重庆电力公司长寿站5053#开关的两只均压电容发生爆炸事故。当均压电容增加到一定值后，发生弧后击穿时，均压电容增加了击穿电流，开断能力逐渐降低。另外，均压电容与系统感性元件可能形成的谐振过电压和重燃过电压会对均压电容造成潜在的隐患。
发明内容
本发明提供了一种用于自均压式多断口真空断路器的真空灭弧室，解决了在无均压电容的条件下，无法实现各个断口之间电压均匀分布的问题，并提高了多断口真空断路器的开断能力。
本发明的技术方案：
一种用于自均压式多断口真空断路器的真空灭弧室，包括上端盖1、静触头2、BST陶瓷壳4、屏蔽罩5、动触头6、波纹管屏蔽罩7、波纹管8和下端盖9。
所述的BST陶瓷壳4为柱状中空结构，上端盖1和下端盖9分别与BST陶瓷壳4上下两端密闭连接，构成真空密闭空间。
所述的屏蔽罩5固定于BST陶瓷壳4内壁；静触头2的上部与上端盖1的下端面连接；动触头6的下端轴穿透下端盖9，其下端轴上套有与下端盖9连接的波纹管8，波纹管8起弹簧作用，使动触头6能够在BST陶瓷壳4内上下运动。静触头2与动触头6同轴对应，静触头2的下部和与动触头6的上部置于屏蔽罩5内部；波纹管屏蔽罩7套装在波纹管8的外部。
进一步的，一种用于自均压式多断口真空断路器的真空灭弧室，还包含陶瓷内壳3，所述的陶瓷内壳3为柱状中空结构，置于BST陶瓷壳4和屏蔽罩5之间。
所述的陶瓷内壳3采用含95％氧化铝的CaO-Al2O3-SiO2体系高铝瓷；BST陶瓷壳4采用钛酸钡锶掺杂的高介电常数的陶瓷材料BST，介电常数为2300，绝缘电阻大于1×1011Ω。BST陶瓷壳4的组分以质量百分比计，包括60％的BaTiO3，25％的SrTiO3，13％的Bi2O3·3TiO2，1.5％的Co2O3和0.5％的Fe3O4。
BST陶瓷壳4的尺寸参数满足公式7.82L＝(R1-R2)；
其中，L为BST陶瓷壳4高度，R1为BST陶瓷壳4的外径，R2为BST陶瓷壳4的内径。
上端盖1和下端盖9作为电极，高介电常数的BST陶瓷壳4作为电介质，构成了一个容量较大的等效电容。
本发明的有益效果：本发明的自均压真空灭弧室有两种实现方式，通过BST陶瓷壳的高介电常数性能提高真空灭弧室的等效电容参数。基于这种自均压式真空灭弧室构成的多断口真空断路器，可以在无均压电容的条件下，实现各个断口之间电压均匀分布，提高了多断口真空断路器的开断能力。这种自均压式多断口真空断路器用真空灭弧室结构简单，便于实现。同时，可以取代均压电容在多断口真空断路器中的使用，避免均压电容在开断过程中带来不利影响和安全隐患。
附图说明
图1是新型真空灭弧室1结构示意图。
图2是新型真空灭弧室2结构示意图。
图中，1上端盖；2静触头；3陶瓷内壳；4BST陶瓷壳；5屏蔽罩；6动触头；7波纹管屏蔽罩；8波纹管；下端盖9。
具体实施方式
以下结合技术方案和附图详细叙述本发明的具体实施方式。
如图1所示，一种用于自均压式多断口真空断路器的真空灭弧室，包括上端盖1、静触头2、陶瓷内壳3、BST陶瓷壳4、屏蔽罩5、动触头6、波纹管屏蔽罩7、波纹管8和下端盖9。
所述的BST陶瓷壳4和陶瓷内壳3为柱状中空结构，陶瓷内壳3置于BST陶瓷壳4内，上端盖1和下端盖9分别与BST陶瓷壳4和陶瓷壳3的上下两端密闭连接，构成真空密闭空间。
所述的屏蔽罩5置于陶瓷内壳3内，静触头2与上端盖1的下端面连接；动触头6的下端轴穿透下端盖9，其下端轴上套有与下端盖9连接的波纹管8，波纹管8起弹簧作用，使动触头6能够上下运动。静触头2与动触头6同轴对应，波纹管屏蔽罩7套装在波纹管8的外部。
所述的陶瓷内壳3采用含95％氧化铝的CaO-Al2O3-SiO2体系高铝瓷；BST陶瓷壳4采用钛酸钡锶掺杂的高介电常数的陶瓷材料BST，介电常数为2300，绝缘电阻大于1×1011Ω。BST陶瓷壳4的组分以质量百分比计，包括60％的BaTiO3，25％的SrTiO3，13％的Bi2O3·3TiO2，1.5％的Co2O3和0.5％的Fe3O4。
上端盖1和下端盖9作为电极，高介电常数的BST陶瓷壳4作为电介质，构成了一个容量较大的等效电容。
该灭弧室有两种实现方式，其一自均压式真空灭弧室(真空灭弧室1)采用两层绝缘陶瓷壳，内层陶瓷壳采用含95％氧化铝的CaO-Al2O3-SiO2体系高铝瓷；外层陶瓷壳采用钛酸钡锶掺杂的高介电常数的陶瓷材料。真空灭弧室内层陶瓷壳起到密封真空的作用，同时与外层陶瓷壳形成等效自电容。改变外层陶瓷壳组分起到增大真空灭弧室等效自电容的作用。其二自均压式真空灭弧室(真空灭弧室2)的实现方式为，采用BST陶瓷壳代替95％氧化铝陶瓷壳，在密封真空的同时增大真空灭弧室的等效电容参数，实现自均压式真空灭弧室的一体化。
两种方式下的自均压式真空灭弧室的等效电容的容量大小取决于都取决于BST陶瓷外壳的相对介电常数和其厚度。由这种真空灭弧室构成的多断口真空断路器，达到多断口真空断路器中各个断口的等效电容参数为500pF的效果。为适应开断不同短路电流场合下多断口真空断路器中对真空灭弧室的要求，可根据公式选择合适的构成多断口真空断路器中真空灭弧室的外层陶瓷壳尺寸参数满足公式7.82L＝(R1-R2)，其中，L为BST陶瓷壳4高度，R1为BST陶瓷壳4的外径，R2为BST陶瓷壳4的内径。

Claims (3)

1.一种用于自均压式多断口真空断路器的真空灭弧室，其特征在于，包括上端盖(1)、静触头(2)、BST陶瓷壳(4)、屏蔽罩(5)、动触头(6)、波纹管屏蔽罩(7)、波纹管(8)和下端盖(9)；
所述的BST陶瓷壳(4)为柱状中空结构，上端盖(1)和下端盖(9)分别与BST陶瓷壳(4)上下两端密闭连接，构成真空密闭空间；
所述的上端盖(1)和下端盖(9)作为电极，高介电常数的BST陶瓷壳(4)作为电介质，构成了一个容量较大的等效电容；
所述的BST陶瓷壳(4)的尺寸参数满足公式7.82L＝(R1-R2)；
其中，L为BST陶瓷壳(4)高度，R1为BST陶瓷壳(4)的外径，R2为BST陶瓷壳(4)的内径；
所述的屏蔽罩(5)固定于BST陶瓷壳(4)内壁；静触头(2)的上部与上端盖(1)的下端面连接；动触头(6)的下端轴穿透下端盖(9)，其下端轴上套有与下端盖(9)连接的波纹管(8)，波纹管(8)起弹簧作用，使动触头(6)能够在BST陶瓷壳(4)内上下运动；静触头(2)与动触头(6)同轴对应，静触头(2)的下部和与动触头(6)的上部置于屏蔽罩(5)内部；波纹管屏蔽罩(7)套装在波纹管(8)的外部；
所述的BST陶瓷壳(4)采用钛酸钡锶掺杂的高介电常数的陶瓷材料BST，其组分以质量百分比计，包括60％的BaTiO3，25％的SrTiO3，13％的Bi2O3·3TiO2，1.5％的Co2O3和0.5％的Fe3O4。
2.如权利要求1所述的真空灭弧室，其特征在于，还包含陶瓷内壳(3)，所述的陶瓷内壳(3)为柱状中空结构，置于BST陶瓷壳(4)和屏蔽罩(5)之间；陶瓷内壳(3)采用含95％氧化铝的CaO-Al2O3-SiO2体系高铝瓷。
3.如权利要求1或2的真空灭弧室，其特征在于，BST陶瓷壳(4)的介电常数为2300，绝缘电阻大于1×1011Ω。
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