CN108259014B

CN108259014B - Impedance matching Josephson parametric amplifier, preparation method thereof and communication module

Info

Publication number: CN108259014B
Application number: CN201810020974.4A
Authority: CN
Inventors: 杨夏; 朱美珍
Original assignee: Origin Quantum Computing Technology Co Ltd
Current assignee: Origin Quantum Computing Technology Co Ltd
Priority date: 2018-01-10
Filing date: 2018-01-10
Publication date: 2024-10-11
Anticipated expiration: 2038-01-10
Also published as: CN108259014A

Abstract

The invention discloses an impedance matching Josephson parametric amplifier, a preparation method thereof and a communication module, and belongs to the field of Josephson parametric amplifiers. The invention solves the problems of larger signal attenuation and large device volume of the impedance-matched Josephson parametric amplifier in the prior art. The impedance transformer, the non-harmonic resonant cavity and the pumping microwave circuit of the impedance matching Josephson parametric amplifier are integrated on a silicon substrate, the second end of the impedance transformer is connected with the non-harmonic resonant cavity in series by using superconducting materials, and meanwhile, all materials except for a capacitor insulating layer are superconducting materials, so that the reflection and loss of signal microwaves of the amplifier prepared by the invention are greatly reduced, and the attenuation constant is almost 0. The bandwidth of the amplifier can reach more than 1GHz, the amplifier can work in the frequency range of 5GHz-8GHz, meanwhile, the preparation process is simplified, and the repeatability and the yield of device preparation are improved.

Description

Impedance matching Josephson parametric amplifier, preparation method thereof and communication module

Technical Field

The invention relates to the field of Josephson parametric amplifiers, in particular to an impedance-matched Josephson parametric amplifier, a preparation method thereof and a communication module.

Background

The main current Josephson parametric amplifier mainly comprises a traveling wave amplifier, a traditional narrow-band Josephson parametric amplifier, an impedance matching Josephson parametric amplifier and the like. The travelling wave amplifier has the advantages of large bandwidth, high saturated power and the like, but the travelling wave amplifier is complex in structure, the preparation process needs a very good micro-nano processing technology and low-loss insulating materials, the conventional (A near–quantum-limited Josephson traveling-wave parametric amplifier,C.Macklin et.al.,Science 350 6258(2015);Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching,T.C.White et.al.,Appl.Phys.Lett.106,242601(2015)). narrow-band Josephson parametric amplifier is difficult to process in a common laboratory, the structure is simple, the gain and the noise can meet the measurement requirement, but the bandwidth can only reach tens of MHz, the bandwidth of the microwave (Single-shot readout of a superconducting flux qubit with a flux-driven Josephson parametric amplifier,Z.R.Lin,et.al.Appl.Phys.Lett.103,132602(2013)). impedance matching Josephson parametric amplifier with multiple frequencies can not be measured simultaneously, the bandwidth of the Josephson parametric amplifier with multiple frequencies can reach hundreds of MHz, the microwave signals can be measured simultaneously, and the preparation method is relatively simple.

In the prior art, for the preparation of an impedance-matched josephson parametric amplifier, an impedance transformer and a non-harmonic resonance cavity are generally prepared in a separated mode, wherein the impedance transformer is prepared by using a printed circuit board, the non-harmonic resonance cavity is prepared on a silicon substrate, and then the two parts are connected by using a lead meter, so that the preparation method has the following defects: (1) The impedance converter is made of non-superconducting materials, and signal attenuation is large; and (2) the integration level is low, and the device size is large.

Disclosure of Invention

1. Problems to be solved

Aiming at the problems of larger signal attenuation and large device size of the impedance-matched Josephson parametric amplifier in the prior art, the invention provides the impedance-matched Josephson parametric amplifier, a preparation method thereof and a communication module. The impedance converter, the non-harmonic resonant cavity and the pumping microwave circuit of the impedance matching Josephson parametric amplifier are integrated on a silicon substrate, the second end of the impedance converter is connected with the non-harmonic resonant cavity in series, a superconductive aluminum film is used for series connection, and meanwhile, all materials except a capacitor insulating layer are superconductive materials, so that the reflection and loss of signal microwaves of the amplifier prepared by the invention are greatly reduced, and the attenuation constant is almost 0.

2. Technical proposal

In order to solve the problems, the invention adopts the following technical scheme.

The terms used in the present invention are defined as follows:

PMMA: english full name polymethyl methacrylate is the most commonly used positive photoresist in the electron beam exposure process, and is prepared by polymerization reaction of monomer methyl methacrylate;

MMA: english full name METHYL METHACRYLATE, methyl methacrylate;

bilayer MMA/PMMA e-beam resist: the bottom layer is MMA photoresist, and the upper layer is PMMA photoresist. The thickness of the bottom layer can be 400nm-800nm, and the thickness of the upper layer can be 300nm-500nm;

pumping microwaves: the pump microwave is an energy source of the amplifier, and the non-harmonic resonant cavity is utilized to convert the energy of the pump microwave into the energy of the signal microwave, so that the signal microwave is amplified.

An impedance-matched Josephson parametric amplifier comprises an impedance transformer, a non-harmonic resonant cavity and a pumping microwave circuit;

The first end of the impedance transformer is connected with a first signal input port, the second end of the impedance transformer is connected with the non-harmonic resonant cavity in series, and the first signal input port is a signal microwave input port to be amplified;

the non-harmonic resonant cavity is in mutual inductance connection with the pumping microwave circuit.

The impedance-matched josephson parametric amplifier is prepared by a method in the prior art that an impedance transformer and a non-harmonic resonant cavity are separated, wherein the impedance transformer is prepared by a printed circuit board, the non-harmonic resonant cavity is prepared on a silicon substrate, then the two parts are connected by a lead wire instrument, the tangent loss angle of the material of the printed circuit board is delta=0.002, the attenuation constant is 0.0013 obtained by alpha= ktan delta, k is a microwave propagation vector, the reflection and the loss of signal microwaves are caused, the gain and the bandwidth of the amplifier are limited, the impedance transformer, the non-harmonic resonant cavity and a pumping microwave circuit of the impedance-matched josephson parametric amplifier are integrated on the silicon substrate, the second end of the impedance transformer is connected with the non-harmonic resonant cavity in series, and the superconducting material is connected in series, so that the reflection and the loss of the signal microwaves of the amplifier prepared by the invention are greatly reduced, and the attenuation constant is almost 0.

Preferably, the impedance converter is formed by sequentially connecting a first coplanar waveguide, a second coplanar waveguide and a third coplanar waveguide in series;

The non-harmonic resonance cavity is formed by connecting a capacitor and a superconducting quantum interferometer in parallel;

The pumping microwave circuit is formed by connecting a magnetic flux bias line and a second signal input port in series, and the second signal input port is an input port shared by a pumping microwave signal and a magnetic flux bias signal;

The first end of the first coplanar waveguide is connected with the first signal input port, the first signal input port is a signal microwave input port to be amplified, and the second end of the third coplanar waveguide is connected with the non-harmonic resonant cavity in series;

The superconducting quantum interferometer is connected with the magnetic flux bias line in a mutual inductance mode.

In the prior art, pump microwaves and signal microwaves to be amplified are input into a device at the same port, and the signal microwaves to be amplified and the pump microwaves interfere with each other. According to the technical scheme, the second signal input port is used for inputting the pumping microwaves, the first signal input port is used for inputting the signal microwaves to be amplified, and the pumping microwaves and the signal microwaves to be amplified are respectively input through the non-through ports, so that interference of the signal microwaves to be amplified is avoided.

Preferably, the superconducting quantum interferometer is a nonlinear inductor.

Preferably, the capacitor is formed by sandwiching an insulating layer between two superconducting flat plates, and the insulating layer is a natural oxide layer on the surface of the aluminum film.

The invention uses natural alumina as the insulating layer of the capacitor, does not need to grow the insulating layer, and simplifies the preparation process. In the prior art, the evaporated aluminum oxide is used as an insulating layer, the covering uniformity of lower metal is poor, a natural oxide layer formed by natural aluminum oxide forms a uniform oxide layer on a film, the directivity problem of the evaporated aluminum oxide film is avoided, the surface of the metal film can be covered completely, and the reliability of a device is ensured. In the prior art, the evaporated alumina is used as an insulating layer, one-time photoetching and coating processes are added, and the device preparation process is more complex.

Preferably, the impedance of the first coplanar waveguide is 50Ω;

The impedance of the second coplanar waveguide is 40 omega, and the length of the second coplanar waveguide is 0.25L;

the impedance of the third coplanar waveguide is 58 omega, and the length of the third coplanar waveguide is 0.5L;

wherein L is the microwave wavelength of the signal to be amplified; the frequency f _im,f_im =v/L of the impedance transformer, where v is the propagation speed of the signal microwaves to be amplified in the coplanar waveguide, Epsilon is the dielectric constant of the substrate, c _l is the speed of light in vacuum;

The frequency f ₀ of the non-harmonic resonance cavity is calculated according to the formula:

Josephson inductance L _J is:

L_J＝Φ₀/2πI_c

Wherein, I _c is a critical current of the superconducting quantum interferometer, Φ ₀ is a magnetic flux quantum, and the frequency f ₀ of the non-harmonic resonant cavity is:

C is the capacitance value of the capacitor;

By changing the current on the magnetic flux bias line, the critical current I _c of the superconducting quantum interference device can be adjusted, and then the frequency f ₀ of the non-harmonic resonant cavity is adjusted, when f ₀＝f_im, the impedance-matched Josephson parametric amplifier works in an optimal state, namely, the gain and bandwidth of the impedance-matched Josephson parametric amplifier reach the maximum value, the frequency range of the operation of the impedance-matched Josephson parametric amplifier is f ₀-(f_BW/2) to f ₀+(f_BW/2), wherein f _BW is the bandwidth of the impedance-matched Josephson parametric amplifier, and the bandwidth of the impedance-matched Josephson parametric amplifier refers to the microwave frequency of a signal to be amplified, which corresponds to when the gain of the impedance-matched Josephson parametric amplifier is reduced to half of the maximum gain;

Gain G is defined as g=log ₁₀(P_out/P_in), where P _in refers to the microwave input power of the signal to be amplified, and P _out refers to the output power of the signal to be amplified after microwave amplification.

The current amplifier works in the range of 5GHz-6GHz, the maximum gain is 20dB, the maximum bandwidth is 600MHz, the amplifier is a low-noise amplifier working at extremely low temperature, the working frequency of the amplifier is in the wave band of 5GHz-8GHz, the maximum gain can reach more than 20dB, the bandwidth can reach more than 1GHz, and the bandwidth of the amplifier is nearly twice of the bandwidth of 600MHz in the prior art. With the amplifier of the invention we can measure approximately 2 times the number of signals compared to existing amplifiers.

A preparation method of an impedance-matched Josephson parametric amplifier comprises the following steps:

(1) First coating and photoetching

A. Plating an aluminum film with the thickness of 30-100 nm on the cleaned substrate, wherein the aluminum film is subjected to high vacuum electron beam evaporation plating, and the plating rate is 0.1-2 nm/s;

b. Preparing a required pattern by using an ultraviolet light method, wherein an impedance converter, a first signal input port, a magnetic flux bias line, a second signal input port, a lower polar plate of a capacitor and a ground plane are defined in the photoetching;

c. etching the aluminum film by using a wet etching method;

(2) Second coating and photoetching

A. Preparing an upper polar plate pattern of the capacitor by using electron beam lithography;

b. Removing an oxide layer on the surface of the aluminum film in a vacuum cavity with the air pressure of 10 ^-3Pa-10^-6 Pa by using an argon ion etching method;

c. Pure oxygen is introduced into a vacuum cavity with the air pressure of 10 ^-3Pa-10^-6 Pa, so that the air pressure in the cavity reaches 100Torr-500Torr, and the aluminum film is oxidized in the pure oxygen for 5h-10h to obtain a pure aluminum oxide layer;

d. the device is conveyed into an evaporation cavity under the condition of maintaining the air pressure at 10 ^-3Pa-10^-6 Pa, 50nm-100nm is evaporated in the evaporation cavity, and the coating speed of the aluminum film is 0.1nm/s-2nm/s;

e. stripping off the excessive aluminum film and photoresist by using methyl dipyrrolidone;

(3) Third coating and photoetching

A. preparing third photoetching by using electron beam lithography, wherein a superconducting quantum interferometer, a connecting part of the superconducting quantum interferometer and a ground plane, a connecting part of the superconducting quantum interferometer and a capacitor, and a connecting part of the capacitor and an impedance converter are defined in the photoetching;

b. Removing an oxide layer on the surface of the aluminum film by an argon ion etching method, wherein the etching time is 1-5 min, and the used voltage and current are 100-400V and 5-40 mA respectively;

c. Transferring the device into an evaporation cavity, preparing a first layer of the Josephson junction by using a double-angle evaporation method, wherein the thickness of an aluminum film is 20-50 nm, and the inclination angle is 20-40 degrees;

d. the device is transferred into an oxidation cavity, the surface of a pure oxygen alumina film is introduced into the cavity, the air pressure is 0.02Torr-0.1Torr, and the oxidation time is 10min-30min;

e. the device is conveyed back to the evaporation cavity, the evaporation aluminum film is 50nm-120nm, and the inclination angle is-20 degrees to 40 degrees;

f. excess aluminum film and photoresist were stripped off using monomethyl dipyrrolidone.

Preferably, the wet etching method adopted in the step c of the step (1) is to adopt an aluminum film etching solution, the etching rate is 0.8nm/s, and the photoresist is cleaned by using the monomethyl dipyrrolidone after the etching is finished.

Preferably, in the step a of the step (2), the electron beam photoresist is a bilayer MMA/PMMA electron beam photoresist.

Preferably, in the step b of the step (2), the etching time is 1min-5min, and the used voltage and current are 100V-400V and 5mA-40mA respectively.

In the preparation method, the impedance converter is prepared by using micro-processing methods such as coating, photoetching and the like, so that the processing precision is higher, the parameters of a preparation device are closer to the design value, the impedance converter and the non-harmonic resonant cavity are connected by using a lead wire instrument in the prior art, reflection and loss of signal microwaves can be caused, the gain and bandwidth of an amplifier are limited, and the impedance converter and the non-harmonic resonant cavity are connected by using a superconducting aluminum film, so that the problem is avoided. The bandwidth of the traditional impedance matching Josephson amplifier is 600MHz, and the bandwidth in the invention can reach more than 1GHz, so that the quantity of measurement qubits can be doubled.

In the preparation method, the natural alumina is used as the capacitor insulating layer, the insulating layer growth is not needed, the preparation process is simplified, the evaporated alumina is used as the insulating layer in the prior art, the covering uniformity of lower metal is poor, the natural oxide layer forms a uniform oxide layer on the film, the directional problem of the evaporated film is avoided, the surface of the metal film can be covered completely, and the reliability of the device is ensured. The short circuit condition can not occur in the process of preparing the capacitor, and the repeatability and high yield of the prepared device can be ensured. In the prior art, the evaporated alumina is used as an insulating layer, one-time photoetching and coating processes are added, and the device preparation process is more complex. In the prior art, electron beam lithography is used, electron beam evaporation is used for film coating, and an evaporated aluminum oxide film is used for a capacitor insulating layer.

A communications module, said impedance-matched josephson parametric amplifier for amplifying signals; and a port for outputting a signal amplified by said impedance-matched josephson parametric amplifier.

3. Advantageous effects

Compared with the prior art, the invention has the beneficial effects that:

(1) In the prior art, the impedance matching Josephson parametric amplifier is prepared by adopting a mode of separating an impedance converter and a non-harmonic resonant cavity, wherein the impedance converter is prepared by using a printed circuit board, the non-harmonic resonant cavity is prepared on a silicon substrate, then two parts are connected by using a lead wire instrument, the tangent loss angle of the material of the printed circuit board is delta=0.002, the attenuation constant is 0.0013 obtained by alpha= ktan delta, k is a microwave propagation vector, the reflection and the loss of signal microwaves are caused, the gain and the bandwidth of the amplifier are limited, the impedance converter, the non-harmonic resonant cavity and a pumping microwave circuit of the impedance matching Josephson parametric amplifier are integrated on the silicon substrate, the second end of the impedance converter is connected with the non-harmonic resonant cavity in series, and the superconducting material is connected in series, so that the reflection and the loss of the signal microwaves of the amplifier prepared by the invention are greatly reduced, and the attenuation constant is almost 0;

(2) In the prior art, pump microwaves and signal microwaves to be amplified are input into a device at the same port, and the signal microwaves to be amplified and the pump microwaves interfere with each other. In the technical scheme of the invention, the pump microwaves are input by using the second signal input port, the signal microwaves to be amplified are input by using the first signal input port, and the pump microwaves and the signal microwaves to be amplified are respectively input by using the non-through ports, so that the interference of the signal microwaves to be amplified is avoided;

(3) The invention uses natural alumina as the insulating layer of the capacitor, does not need to grow the insulating layer, and simplifies the preparation process. In the prior art, the evaporated aluminum oxide is used as an insulating layer, the covering uniformity of lower metal is poor, a natural oxide layer formed by natural aluminum oxide forms a uniform oxide layer on a film, the directivity problem of the evaporated aluminum oxide film is avoided, the surface of the metal film can be covered completely, and the reliability of a device is ensured. The invention can not generate short circuit condition in the process of preparing the capacitor, and can ensure the repeatability and high yield of the prepared device. In the prior art, evaporated aluminum oxide is used as an insulating layer, one-time photoetching and coating processes are added, the device preparation process is more complex, electron beam photoetching is used in the prior art, electron beam evaporation coating is used for a film, and an evaporated aluminum oxide film is used for a capacitor insulating layer, so that the natural oxide layer on the surface of the aluminum film is used for a capacitor, the coating times are reduced, and the preparation process is simplified;

(4) The current amplifier works in the range of 5GHz-6GHz, the maximum gain is 20dB, the maximum bandwidth is 600MHz, the amplifier is a low-noise amplifier working at extremely low temperature, the working frequency of the amplifier is in the wave band of 5GHz-8GHz, the maximum gain can reach more than 20dB, the bandwidth can reach more than 1GHz, and the bandwidth of the amplifier is nearly twice of the bandwidth of 600MHz in the prior art. With the amplifier of the invention, the number of signals we can measure is nearly 2 times that of the existing amplifier;

(5) In the preparation method, the impedance converter is prepared by using micro-processing methods such as coating, photoetching and the like, so that the processing precision is higher, the parameters of a preparation device are closer to the design value, the impedance converter and the non-harmonic resonant cavity are connected by using a lead wire instrument in the prior art, reflection and loss of signal microwaves can be caused, the gain and bandwidth of an amplifier are limited, and the impedance converter and the non-harmonic resonant cavity are connected by using a superconducting aluminum film, so that the problem is avoided. The bandwidth of the traditional impedance matching Josephson amplifier is 600MHz, and the bandwidth in the invention can reach more than 1GHz, so that the quantity of measurement qubits can be doubled;

Drawings

FIG. 1 is a schematic diagram of a device design circuit of the present invention;

FIG. 2 is an overall device design;

FIG. 3 is a diagram of a superconducting quantum interferometer and capacitor design;

FIG. 4 is an electron microscope image of the device;

fig. 5 is an enlarged performance graph of the amplifier at the optimum operating point when l=9.07 mm;

Fig. 6 is an enlarged performance graph of the amplifier at the optimum operating point when l=8.55 mm;

fig. 7 is an enlarged performance graph of the amplifier at the optimum operating point when l=9.36 mm.

In the figure: 1. the device comprises an impedance transformer, 11, a first coplanar waveguide, 12, a second coplanar waveguide, 13, a third coplanar waveguide, 14, a first signal input port, 2, a non-harmonic resonant cavity, 21, a superconducting quantum interferometer, 22, a capacitor, 23, a connecting part of the superconducting quantum interferometer and a ground plane, 24, a connecting part of the superconducting quantum interferometer and the capacitor, 25, a connecting part of the capacitor and the impedance transformer, 3, a pumping microwave circuit, 31, a magnetic flux bias line, 32 and a second signal input port.

Detailed Description

The present invention will be described in detail with reference to the accompanying drawings.

Example 1

As shown in fig. 1, 2 and 3, the impedance-matched josephson parametric amplifier comprises an impedance transformer 1, a non-harmonic resonant cavity 2 and a pump microwave circuit 3, wherein a first end of the impedance transformer 1 is connected with a first signal input port 14, a second end of the impedance transformer 1 is connected with the non-harmonic resonant cavity 2 in series, the first signal input port 14 is a signal microwave input port to be amplified, and the non-harmonic resonant cavity 2 is in mutual inductance connection with the pump microwave circuit 3.

The impedance matching Josephson parametric amplifier comprises an impedance converter 1, a non-harmonic resonant cavity 2 and a pumping microwave circuit 3, wherein the impedance converter 1, the non-harmonic resonant cavity 2 and the pumping microwave circuit 3 of the amplifier are integrated on a silicon substrate, the impedance converter 1 and the non-harmonic resonant cavity 2 are connected in series by using a superconducting aluminum film, signal microwaves to be amplified are input from a first signal input port 14 of the impedance converter 1 and enter the non-harmonic resonant cavity 2, and the critical current of the non-harmonic resonant cavity 2 is regulated by regulating the bias current of the pumping microwave circuit 3, so that the frequency of the non-harmonic resonant cavity 2 is regulated, and the amplifier works at the frequency to be amplified.

The impedance-matched josephson parametric amplifier is prepared by a method in the prior art that an impedance transformer and a non-harmonic resonance cavity are separated, wherein the impedance transformer is prepared by a printed circuit board, the non-harmonic resonance cavity is prepared on a silicon substrate, then two parts are connected by a lead wire instrument, the tangent loss angle of the material of the printed circuit board is generally delta=0.002, the attenuation constant is 0.0013 obtained by alpha= ktan delta, k is a microwave propagation vector, the reflection and the loss of signal microwaves are caused, the gain and the bandwidth of the amplifier are limited, the impedance transformer 1, the non-harmonic resonance cavity 2 and the pumping microwave circuit 3 of the impedance-matched josephson parametric amplifier are integrated on the silicon substrate, the impedance transformer 1, the first signal input port 14, the non-harmonic resonance cavity 2 and the pumping microwave circuit 3 are all prepared by superconducting materials, the second end of the impedance transformer 1 is connected with the non-harmonic resonance cavity 2 in series, and the attenuation constant of the amplifier is greatly reduced by the superconducting aluminum film in series.

As a preferable solution of the present embodiment, referring to fig. 1,2, and 3, the impedance transformer 1 is formed by sequentially connecting a first coplanar waveguide 11, a second coplanar waveguide 12, and a third coplanar waveguide 13 in series; the non-harmonic resonance cavity 2 is formed by connecting a capacitor 22 and a superconducting quantum interference device 21 in parallel; the pumping microwave circuit 3 is formed by connecting a magnetic flux bias line 31 and a second signal input port 32 in series, wherein the second signal input port 32 is an input port shared by a pumping microwave signal and a magnetic flux bias signal; a first end of the first coplanar waveguide 11 is connected with the first signal input port 14, the first signal input port 14 is a signal microwave input port to be amplified, and a second end of the third coplanar waveguide 13 is connected with the non-resonant cavity 2 in series; the superconducting quantum interferometer 21 is connected with the magnetic flux bias line 31 in a mutual inductance way.

The signal microwaves to be amplified sequentially enter the first coplanar waveguide 11, the second coplanar waveguide 12 and the third coplanar waveguide 13 from the first signal input port 14, and then enter the non-harmonic resonance cavity 2 formed by connecting the capacitor 22 and the superconducting quantum interferometer 21 in parallel. Both the pump microwave signal and the magnetic flux bias signal are input from the second signal input port 32. The magnetic flux bias line 31 is used for biasing the superconducting quantum interferometer 21, adjusting the equivalent inductance of the superconducting quantum interferometer 21, enabling the non-harmonic resonant cavity 2 to work at the microwave frequency to be amplified, and simultaneously being used for adding pumping microwaves into the superconducting quantum interferometer 21, adding pumping microwaves into the non-harmonic resonant cavity 2 and providing energy sources. When the power of the pumping microwave is more than-40 dBm, amplifying the signal microwave to be amplified added in the non-harmonic resonance cavity 2.

The second signal input port 32 is used for inputting the pumping microwaves, the first signal input port 14 is used for inputting the signal microwaves to be amplified, and the pumping microwaves and the signal microwaves to be amplified are respectively input by different ports, so that the interference of the signal microwaves to be amplified is avoided. In the prior art, pump microwaves and signal microwaves to be amplified are input into a device at the same port, and the signal microwaves to be amplified and the pump microwaves interfere with each other.

As a preferred solution of this embodiment, referring to fig. 1,2 and 3, the capacitor 22 is formed by sandwiching an insulating layer between two superconducting flat plates, and the insulating layer is a natural oxide layer on the surface of the aluminum film. The use of natural alumina as the insulating layer of capacitor 22 eliminates the need for insulating layer growth, simplifying the fabrication process. In the prior art, the evaporated aluminum oxide is used as an insulating layer, the covering uniformity of lower metal is poor, and in the preferred scheme, a uniform oxide layer is formed on a film by using a natural oxide layer formed by natural aluminum oxide, so that the problem of directivity of the evaporated aluminum oxide film is solved, the surface of the metal film can be covered completely, and the reliability of a device is ensured. In the prior art, the evaporated alumina is used as an insulating layer, one-time photoetching and coating processes are added, and the device preparation process is more complex.

As a preferable solution of this embodiment, referring to fig. 1,2, and 3, the impedance of the first coplanar waveguide 11 is 50Ω; the impedance of the second coplanar waveguide 12 is 40Ω, and the length of the second coplanar waveguide 12 is 0.25L; the impedance of the third coplanar waveguide 13 is 58 Ω, and the length of the third coplanar waveguide 13 is 0.5L.

The different impedances are achieved by varying the width of the coplanar waveguide centerline, the centerline-to-ground plane spacing. Wherein L is the microwave wavelength of the signal to be amplified; the frequency f _im,f_im =v/L of the impedance transformer 1 can be determined by L, where v is the propagation speed of the signal microwaves to be amplified in the coplanar waveguide,Epsilon is the dielectric constant of the substrate, c _l is the speed of light in vacuum;

Superconducting quantum interferometer 21 is formed by adding two josephson junctions into a superconducting loop, and the josephson junctions are prepared by using a double-angle evaporation method. The non-harmonic resonance cavity is composed of a superconducting quantum interference device 21 and a capacitor 22, wherein the superconducting quantum interference device has the function of a nonlinear inductor called Josephson inductor, and the Josephson inductor L _J is:

L_J＝Φ₀/2πI_c

wherein, I _c is a critical current of the superconducting quantum interference device 21, Φ ₀ is a magnetic flux quantum, and the frequency f ₀ of the non-resonant cavity 2 is:

C is the capacitance value of the capacitor 22;

By changing the current on the magnetic flux bias line 31, the critical current I _c of the superconducting quantum interference device 21 can be adjusted, and then the frequency f ₀ of the non-harmonic resonant cavity 2 is adjusted, when f ₀＝f_im, the impedance-matched josephson parametric amplifier works in an optimal state, namely, the gain and bandwidth of the impedance-matched josephson parametric amplifier reach the maximum value, the frequency range of the impedance-matched josephson parametric amplifier is f ₀-(f_BW/2) to f ₀+(f_BW/2), wherein f _BW is the bandwidth of the impedance-matched josephson parametric amplifier, and the bandwidth of the impedance-matched josephson parametric amplifier refers to the microwave frequency of a signal to be amplified, which corresponds to when the gain of the impedance-matched josephson parametric amplifier is reduced to half of the maximum gain;

From the above formula, it can be seen that the operating frequency of the amplifier can be controlled by changing the length of the impedance transformer, the capacitance value and the critical current of the superconducting quantum interference device. The length L of the signal microwave wavelength to be amplified is controlled within the range of 7.2mm-12mm, the capacitance is controlled within the range of 2fF-6fF, the critical current of the superconducting quantum interferometer is controlled within the range of 2 mu A-5 mu A, the working frequency range of the amplifier can reach 5GHz-8GHz, the highest gain can reach more than 20dB, and the bandwidth can reach more than 1 GHz.

The wavelength L of the signal microwave to be amplified, the capacitance value of the capacitor 22, the critical current of the superconducting quantum interferometer 21, the impedance of the first coplanar waveguide 11, the impedance of the second coplanar waveguide 12, the length of the second coplanar waveguide 12, the impedance of the third coplanar waveguide 13, and other relevant parameters are merely exemplified, and the relevant parameters can be transformed as required to obtain an amplifier with proper working frequency, gain and bandwidth.

The prior amplifier works in the range of 5GHz-6GHz, the maximum gain is 20dB, the maximum bandwidth is 600MHz, and as a preferred technical scheme of the embodiment, the amplifier is a low-noise amplifier working at extremely low temperature, the working frequency of the amplifier is in the wave band of 5GHz-8GHz, the maximum gain can reach more than 20dB, the bandwidth can reach more than 1GHz, and the bandwidth of the invention is nearly twice of the bandwidth of 600MHz in the prior art. With the amplifier of the invention we can measure approximately 2 times the number of signals compared to existing amplifiers.

The communication module consists of the impedance-matched Josephson parametric amplifier and a communication port, wherein the impedance-matched Josephson parametric amplifier is used for amplifying signals; the communication port is used for outputting signals amplified by the impedance-matched Josephson parametric amplifier.

Example 2

The preparation method of the impedance-matched Josephson parametric amplifier comprises the following steps:

(1) First coating and photoetching

A. firstly, plating an aluminum film with the thickness of 30nm on a cleaned substrate, wherein the aluminum film is subjected to high vacuum electron beam evaporation coating, and the coating speed is 0.1nm/s;

b. The required pattern is prepared by using a ultraviolet lithography method, wherein the impedance transformer 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower plate of the capacitor 22, and the ground plane are defined in the lithography, when the length l=9.07 mm of the signal microwave wavelength to be amplified, the impedance of the first coplanar waveguide 11 is defined as 50Ω, the impedance of the second coplanar waveguide 12 is 40 Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58 Ω, the length of the third coplanar waveguide 13 is 0.5L, and as described above, the frequency of the impedance transformer is 6.5GHz;

c. the wet etching method is used for etching the aluminum film, A-type aluminum film etching liquid of the Transene company is adopted, the etching rate is about 0.8nm/s, and the methyl dipyrrolidone is used for cleaning the photoresist after the etching is finished.

(2) Second coating and photoetching

A. preparing a polar plate pattern on the capacitor 22 by using electron beam lithography, wherein the used electron beam photoresist is double-layer MMA/PMMA photoresist, and the area of the capacitor 22 is 10 mu m multiplied by 20 mu m;

b. And removing an oxide layer on the surface of the aluminum film in a vacuum cavity with the air pressure of 10 ^-3Pa-10^-6 Pa by using an argon ion etching method, wherein an ion source is KDC75 model of Kaufman & Robinson company. The etching time is 1 minute, the used voltage and current are 100V and 5mA respectively, and a part of aluminum film can be etched under the condition so as to ensure that the oxide layer is completely cleaned;

c. Pure oxygen is introduced into a vacuum cavity with the air pressure of 10 ^-3Pa-10^-6 Pa, so that the air pressure in the cavity reaches 100Torr, and the aluminum film is oxidized in the pure oxygen for 5 hours, so that a pure aluminum oxide layer is obtained;

d. The device is conveyed into an evaporation cavity under the condition of maintaining the vacuum with the air pressure of 10 ^-3Pa-10^-6 Pa, 50nm of evaporation is carried out in the evaporation cavity, and the coating speed of the aluminum film is 0.1nm/s;

e. excess aluminum film and photoresist were stripped using monomethyl dipyrrolidone.

The capacitance value produced was about 3.1pF.

(3) Third coating and photoetching

A. a third lithography was prepared using electron beam lithography, which was used to lithography the following patterns: a superconducting quantum interferometer 21, a connecting part 23 of the superconducting quantum interferometer 21 and a ground plane, a connecting part 24 of the superconducting quantum interferometer 21 and a capacitor 22, and a connecting part 25 of the capacitor 22 and the impedance transformer 1;

b. removing an oxide layer on the surface of the aluminum film by an argon ion etching method, wherein the etching time is 1min, and the used voltage and current are 100V and 5mA respectively;

c. transferring the device into an evaporation cavity, preparing a first layer of the Josephson junction by using a double-angle evaporation method, wherein the thickness of an aluminum film is 20nm, and the inclination angle is 20 degrees;

d. The device is conveyed into an oxidation cavity, pure oxygen is introduced into the cavity, the surface of an alumina film is oxidized, the air pressure is 0.02Torr, and the oxidation time is 10min;

e. The device was transferred back to the evaporation chamber with an evaporated aluminum film of 50nm, an inclination angle of-20 deg., and a coating rate of 0.1nm/s.

The critical current of the prepared superconducting quantum interferometer is about 3 mu A, so that the highest frequency of the non-harmonic resonance cavity can be calculated to be 8.63GHz according to the formula.

The performance test result of the impedance-matched josephson parametric amplifier obtained in this embodiment is: as shown in fig. 4, (a) is a scanning electron microscope picture in the device of the embodiment, wherein (a) is a scanning picture of the impedance converter 1, (b) is a picture of the capacitor 22 and the superconducting quantum interference device 21, and (b) is an enlarged picture of the superconducting quantum interference device 22. Fig. 5 shows the amplification performance of the amplifier at the optimal operating point, the bandwidth can reach 1.1GHz, the maximum gain is 21dB, the operating center frequency is 6.5GHz, and the frequency accords with the impedance converter frequency.

In the technical scheme of the embodiment, all elements of the amplifier are integrated on a silicon substrate, the device is small in size, all elements are made of superconducting materials, and the loss of the device can be obviously reduced; in the prior art, the impedance transformer is manufactured by adopting a printed circuit board, the tangent loss angle of the material of the printed circuit board is generally delta=0.002, the attenuation constant is 0.0013 obtained by alpha= ktan delta, k is a microwave propagation vector, the attenuation constant of the impedance transformer manufactured by using the superconducting material on the substrate is almost 0, and the loss of signal microwaves to be amplified in the impedance transformer is greatly reduced;

In the technical scheme of the embodiment, the impedance transformer is prepared by using micro-processing methods such as film plating, photoetching and the like, so that the processing precision is higher, the parameters of a prepared device are closer to the design value, the impedance transformer and the non-harmonic resonant cavity are connected by using a lead instrument in the prior art, reflection and loss of signal microwaves can be caused, the gain and bandwidth of an amplifier are limited, and the impedance transformer and the non-harmonic resonant cavity are connected by using a superconducting aluminum film, so that the problem is avoided. The bandwidth of the traditional impedance matching Josephson amplifier is 600MHz, and the bandwidth in the invention can reach more than 1GHz, so that the quantity of measurement qubits can be doubled.

In the technical scheme of the embodiment, the natural alumina is used as the capacitor insulating layer, the insulating layer growth is not needed, the preparation process is simplified, the evaporated alumina is used as the insulating layer in the prior art, the coverage uniformity of lower metal is poor, in the technical scheme of the embodiment, the natural oxide layer forms a uniform oxide layer on the film, the directional problem of the evaporated film is avoided, the surface of the metal film can be covered on the whole surface, and the reliability of the device is ensured. The short circuit condition can not occur in the process of preparing the capacitor, and the repeatability and high yield of the prepared device can be ensured. In the prior art, the evaporated alumina is used as an insulating layer, one-time photoetching and coating processes are added, and the device preparation process is more complex. In the prior art, electron beam lithography is used, electron beam evaporation is used for film coating, and an evaporated aluminum oxide film is used for a capacitor insulating layer.

Example 3

(1) First coating and photoetching

A. firstly, plating an aluminum film with the thickness of 60nm on a cleaned substrate, wherein the aluminum film is subjected to high vacuum electron beam evaporation coating, and the coating speed is 1nm/s;

b. The required pattern is prepared by using a ultraviolet lithography method, wherein the impedance transformer 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower plate of the capacitor 22 and the ground plane are defined in the lithography, when the length l=8.55 mm of the signal microwave wavelength to be amplified, the impedance of the first coplanar waveguide 11 is defined as 50Ω, the impedance of the second coplanar waveguide 12 is 40Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58Ω, the length of the third coplanar waveguide 13 is 0.5L, and as described above, the frequency of the impedance transformer is 6.9GHz;

(2) Second coating and photoetching

b. And removing an oxide layer on the surface of the aluminum film in a vacuum cavity with the air pressure of 10 ^-3Pa-10^-6 Pa by using an argon ion etching method, wherein an ion source is KDC75 model of Kaufman & Robinson company. The etching time is 3 minutes, the used voltage and current are 200V and 22mA respectively, and a part of aluminum film can be etched under the condition so as to ensure that the oxide layer is completely cleaned;

c. Pure oxygen is introduced into a vacuum cavity with the air pressure of 10 ^-3Pa-10^-6 Pa, so that the air pressure in the cavity reaches 100Torr, and the aluminum film is oxidized in the pure oxygen for 7.5 hours, so that a pure aluminum oxide layer is obtained;

d. the device is conveyed into an evaporation cavity under the condition of maintaining the vacuum with the air pressure of 10 ^-3Pa-10^-6 Pa, 75nm of evaporation is carried out in the evaporation cavity, and the coating speed of the aluminum film is 1nm/s;

The capacitance value produced was about 2.48pF.

(3) Third coating and photoetching

b. Removing an oxide layer on the surface of the aluminum film by an argon ion etching method, wherein the etching time is 1-5 min, and the used voltage and current are 200V and 23mA respectively;

c. transferring the device into an evaporation cavity, preparing a first layer of the Josephson junction by using a double-angle evaporation method, wherein the thickness of an aluminum film is 35nm, and the inclination angle is 30 degrees;

d. The device is conveyed into an oxidation cavity, the surface of a pure oxygen alumina film is introduced into the cavity, the air pressure is 0.06Torr, and the oxidation time is 20min;

e. The device was transferred back to the evaporation chamber with an evaporated aluminum film of 85nm, an inclination angle of-30 deg. and a coating rate of 1nm/s.

The critical current of the prepared superconducting quantum interferometer is about 3.2 mu A, so that the highest frequency of the non-harmonic resonance cavity can be calculated to be 9.96GHz according to the formula.

The performance test result of the impedance-matched josephson parametric amplifier obtained in this embodiment is: as shown in fig. 6, the gain of the impedance-matched josephson parametric amplifier at the optimal operating point, the maximum gain reaches 20dB, the bandwidth is 1GHz, and the operating center frequency is about 6.9GHz, which corresponds to the impedance transformer frequency.

In the technical scheme of the embodiment, the impedance transformer is prepared by using micro-processing methods such as film plating, photoetching and the like, so that the processing precision is higher, the parameters of a prepared device are closer to the design value, the impedance transformer and the non-harmonic resonant cavity are connected by using a lead instrument in the prior art, reflection and loss of signal microwaves can be caused, the gain and bandwidth of an amplifier are limited, and the impedance transformer and the non-harmonic resonant cavity are connected in series by using a superconducting aluminum film, so that the problem is avoided. The bandwidth of the traditional impedance matching Josephson amplifier is 600MHz, and the bandwidth in the invention can reach more than 1GHz, so that the quantity of measurement qubits can be doubled.

Example 4

(1) First coating and photoetching

A. firstly, plating an aluminum film with the thickness of 100nm on a cleaned substrate, wherein the aluminum film is subjected to high vacuum electron beam evaporation coating, and the coating speed is 2nm/s;

b. the required pattern is prepared by using a ultraviolet lithography method, wherein the impedance transformer 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower plate of the capacitor 22 and the ground plane are defined in the lithography, when the length l=9.36 mm of the signal microwave wavelength to be amplified, the impedance of the first coplanar waveguide 11 is defined as 50Ω, the impedance of the second coplanar waveguide 12 is 40Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58Ω, the length of the third coplanar waveguide 13 is 0.5L, and as described above, the frequency of the impedance transformer is 6.3GHz;

(2) Second coating and photoetching

A. preparing a polar plate pattern on the capacitor 22 by using electron beam lithography, wherein the used electron beam photoresist is double-layer MMA/PMMA photoresist, and the area of the capacitor 22 is 10 mu m multiplied by 28 mu m;

b. And removing an oxide layer on the surface of the aluminum film in a vacuum cavity with the air pressure of 10 ^-3-10^-6 Pa by using an argon ion etching method, wherein an ion source is KDC75 model of Kaufman & Robinson company. Etching time is 5 minutes, the used voltage and current are 400V and 40mA respectively, and a part of aluminum film can be etched under the condition so as to ensure that the oxide layer is completely cleaned;

c. pure oxygen is introduced into a vacuum cavity with the air pressure of 10 ^-3-10^-6 Pa, so that the air pressure in the cavity reaches 100Torr, and the aluminum film is oxidized in the pure oxygen for 10 hours, so that a pure aluminum oxide layer is obtained;

d. The device is conveyed into an evaporation cavity under the condition of maintaining the vacuum with the air pressure of 10 ^-3-10^-6 Pa, 100nm of evaporation is carried out in the evaporation cavity, and the coating speed of the aluminum film is 2nm/s;

e. excess aluminum film and photoresist were stripped off using mono methyl dipyrrolidone.

The capacitance value produced was about 4.34pF.

(3) Third coating and photoetching

A. A third lithography was prepared using electron beam lithography, the following patterns of lithography: a superconducting quantum interferometer 21, a connecting part 23 of the superconducting quantum interferometer 21 and a ground plane, a connecting part 24 of the superconducting quantum interferometer 21 and a capacitor 22, and a connecting part 25 of the capacitor 22 and the impedance transformer 1;

b. removing an oxide layer on the surface of the aluminum film by an argon ion etching method, wherein the etching time is 5min, and the used voltage and current are 400V and 40mA respectively;

c. transferring the device into an evaporation cavity, preparing a first layer of the Josephson junction by using a double-angle evaporation method, wherein the thickness of an aluminum film is 50nm, and the inclination angle is 40 degrees;

d. the device is transferred into an oxidation cavity, pure oxygen is introduced into the cavity to oxidize the surface of the aluminum film, the air pressure is 0.1Torr, and the oxidation time is 30min;

e. The device was transferred back to the evaporation chamber with an evaporated aluminum film of 120nm, an inclination angle of-40 deg. and a coating rate of 2nm/s.

The critical current of the prepared superconducting quantum interferometer is about 2.7 mu A, and therefore the highest frequency of the non-harmonic resonance cavity can be calculated to be 6.92GHz according to the formula.

The performance test result of the impedance-matched josephson parametric amplifier obtained in this embodiment is: as shown in fig. 7, the gain of the impedance-matched josephson parametric amplifier at the optimal operating point, the maximum gain reaches 21.5dB, the bandwidth is 1GHz, and the operating center frequency is about 6.3GHz, which corresponds to the impedance transformer frequency.

In the technical scheme of the embodiment, the natural alumina is used as the capacitor insulating layer, the insulating layer growth is not needed, the preparation process is simplified, the evaporated alumina is used as the insulating layer in the prior art, the covering uniformity of lower metal is poor, the natural oxide layer forms a uniform oxide layer on the film, the directional problem of the evaporated film is avoided, the surface of the metal film can be covered completely, and the reliability of the device is ensured. The short circuit condition can not occur in the process of preparing the capacitor, and the repeatability and high yield of the prepared device can be ensured. In the prior art, the evaporated alumina is used as an insulating layer, one-time photoetching and coating processes are added, and the device preparation process is more complex. In the prior art, electron beam lithography is used, electron beam evaporation is used for film coating, and an evaporated aluminum oxide film is used for a capacitor insulating layer.

Example 5

(1) First coating and photoetching

b. The required pattern is prepared by using a ultraviolet lithography method, wherein the impedance transformer 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower plate of the capacitor 22 and the ground plane are defined in the lithography, when the length l=7.2 mm of the signal microwave wavelength to be amplified, the impedance of the first coplanar waveguide 11 is defined as 50Ω, the impedance of the second coplanar waveguide 12 is 40Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58Ω, the length of the third coplanar waveguide 13 is 0.5L, and as described above, the frequency of the impedance transformer is 8GHz;

(2) Second coating and photoetching

A. preparing a polar plate pattern on the capacitor 22 by using electron beam lithography, wherein the used electron beam photoresist is double-layer MMA/PMMA photoresist, and the area of the capacitor 22 is 10 mu m multiplied by 15 mu m;

The capacitance value produced was about 2.4pF.

(3) Third coating and photoetching

c. transferring the device into an evaporation cavity, preparing a first layer of the Josephson junction by using a double-angle evaporation method, wherein the thickness of an aluminum film is 20nm, and the inclination angle is 40 degrees;

d. the device is transferred into an oxidation cavity, pure oxygen is introduced into the cavity to oxidize the surface of the aluminum film, the air pressure is 0.01Torr, and the oxidation time is 20min;

e. The device was transferred back to the evaporation chamber with an evaporated aluminum film of 50nm, an inclination angle of-40 deg. and a coating rate of 0.1nm/s.

The critical current of the prepared superconducting quantum interferometer is about 3.2 mu A, so that the highest frequency of the non-harmonic resonance cavity can be calculated to be 10.1GHz according to the formula.

The amplification performance of the amplifier at the optimal working point can reach 1.1GHz, the maximum gain is 20dB, the working center frequency is 8GHz, and the frequency accords with the frequency of the impedance converter.

Example 6

(1) First coating and photoetching

b. The required pattern is prepared by using a ultraviolet lithography method, wherein the impedance transformer 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower plate of the capacitor 22 and the ground plane are defined in the lithography, when the length l=11.8 mm of the signal microwave wavelength to be amplified, the impedance of the first coplanar waveguide 11 is defined as 50Ω, the impedance of the second coplanar waveguide 12 is 40Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58Ω, the length of the third coplanar waveguide 13 is 0.5L, and as described above, the frequency of the impedance transformer is 5GHz;

(2) Second coating and photoetching

A. preparing a polar plate pattern on the capacitor 22 by using electron beam lithography, wherein the used electron beam photoresist is double-layer MMA/PMMA photoresist, and the area of the capacitor 22 is 10 mu m multiplied by 25 mu m;

The capacitance value prepared was about 3.9pF.

(3) Third coating and photoetching

c. Transferring the device into an evaporation cavity, preparing a first layer of the Josephson junction by using a double-angle evaporation method, wherein the thickness of an aluminum film is 20nm, and the inclination angle is 30 degrees;

d. The device is transferred into an oxidation cavity, pure oxygen is introduced into the cavity to oxidize the surface of the aluminum film, the air pressure is 0.02Torr, and the oxidation time is 30min;

e. The device was transferred back to the evaporation chamber with an evaporated aluminum film of 50nm, an inclination angle of-30 deg. and a coating rate of 0.1nm/s.

The critical current of the prepared superconducting quantum interferometer is about 2 mu A, so that the highest frequency of the non-harmonic resonance cavity can be calculated to be 6.28GHz according to the formula.

The amplification performance of the amplifier at the optimal working point can reach 1.0GHz, the maximum gain is 20dB, the working center frequency is 5GHz, and the frequency accords with the frequency of the impedance converter.

As can be seen from the above examples 2, 3, and 4, the maximum gain of the amplifier in the present invention can reach 21dB, and the maximum bandwidth can reach 1GHz. By varying the length of the impedance transformer, the magnitude of the capacitance, and the critical current of the superconducting quantum interference device, the operating frequency of the amplifier can be controlled. The length L of the microwave wavelength of the signal to be amplified is controlled to be 7.2mm-12mm, the capacitance value of the capacitor 22 is controlled to be 2fF-6fF, the critical current of the superconducting quantum interferometer 21 is controlled to be 2 mu A-5 mu A, and the working frequency range of the amplifier can reach 5GHz-8GHz. The parameters of the wavelength L of the signal microwave to be amplified, the capacitance value of the capacitor 22, the critical current of the superconducting quantum interferometer 21, the impedance of the first coplanar waveguide 11, the impedance of the second coplanar waveguide 12, the length of the second coplanar waveguide 12, the impedance of the third coplanar waveguide 13, the length of the third coplanar waveguide 13, and the like are merely exemplified, and the relevant parameters can be transformed as needed to prepare an amplifier with proper working frequency, gain and bandwidth.

Claims

1. An impedance-matched josephson parametric amplifier, characterized by comprising an impedance transformer (1), a non-resonant cavity (2) and a pump microwave circuit (3); the impedance converter (1) is made of superconducting materials;

The first end of the impedance transformer (1) is connected with a first signal input port (14), the second end of the impedance transformer (1) is connected with the non-harmonic resonance cavity (2) in series, and the first signal input port (14) is a signal microwave input port to be amplified;

the non-harmonic resonant cavity (2) is in mutual inductance connection with the pumping microwave circuit (3);

the non-harmonic resonant cavity (2) is formed by connecting a capacitor (22) and a superconducting quantum interference device (21) in parallel;

The capacitor (22) is formed by sandwiching an insulating layer between two superconducting flat plates, wherein the insulating layer is a natural oxide layer on the surface of an aluminum film;

the impedance converter (1) is formed by sequentially connecting a first coplanar waveguide (11), a second coplanar waveguide (12) and a third coplanar waveguide (13) in series;

-the impedance of the first coplanar waveguide (11) is 50Ω;

the impedance of the second coplanar waveguide (12) is 40 omega, and the length of the second coplanar waveguide (12) is 0.25L;

the impedance of the third coplanar waveguide (13) is 58 omega, and the length of the third coplanar waveguide (13) is 0.5L;

Wherein L is the microwave wavelength of the signal to be amplified.

2. The impedance-matched josephson parametric amplifier of claim 1, wherein,

The pumping microwave circuit (3) is formed by connecting a magnetic flux bias line (31) and a second signal input port (32) in series, and the second signal input port (32) is an input port shared by a pumping microwave signal and a magnetic flux bias signal;

A first end of the first coplanar waveguide (11) is connected with the first signal input port (14), the first signal input port (14) is a signal microwave input port to be amplified, and a second end of the third coplanar waveguide (13) is connected with the non-harmonic resonant cavity (2) in series;

the superconducting quantum interferometer (21) is connected with the magnetic flux bias line (31) in a mutual inductance mode.

3. The impedance-matched josephson parametric amplifier according to claim 2, wherein the superconducting quantum interference device (21) is a nonlinear inductance.

4. The preparation method of the impedance-matched Josephson parametric amplifier is characterized in that the amplifier comprises an impedance converter (1), a non-harmonic resonance cavity (2) and a pumping microwave circuit (3);

The method comprises the following steps:

(1) First coating and photoetching

b. The required pattern is prepared by using an ultraviolet light method, and an impedance converter (1), a first signal input port (14), a magnetic flux bias line (31), a second signal input port (32), a lower polar plate of a capacitor (22) and a ground plane are defined in the photoetching;

c. etching the aluminum film by using a wet etching method;

(2) Second coating and photoetching

A. -preparing an upper plate pattern of the capacitor (22) using electron beam lithography;

(3) Third coating and photoetching

A. Performing a third lithography using an electron beam, wherein the superconducting quantum interferometer (21), the connection part (23) of the superconducting quantum interferometer (21) and the ground plane, the connection part (24) of the superconducting quantum interferometer (21) and the capacitor (22), and the connection part (25) of the capacitor (22) and the impedance transformer (1) are defined in the lithography;

5. The method for preparing the impedance-matched josephson parametric amplifier according to claim 4, wherein: the wet etching method adopted in the step c of the step (1) adopts aluminum film etching liquid, the etching rate is 0.8nm/s, and the photoresist is cleaned by using the methyl dipyrrolidone after the etching is finished.

6. The method for preparing the impedance-matched josephson parametric amplifier according to claim 5, wherein: in the step a of the step (2), the electron beam photoresist is a bilayer MMA/PMMA electron beam photoresist.

7. The method for preparing the impedance-matched josephson parametric amplifier according to claim 5 or 6, characterized by: in the step b of the step (2), the etching time is 1min-5min, and the used voltage and current are 100V-400V and 5mA-40mA respectively.

8. The method of manufacturing an impedance-matched josephson parametric amplifier according to claim 4, wherein,

9. The method of manufacturing an impedance-matched josephson parametric amplifier according to claim 4, wherein the superconducting quantum interference device (21) is a nonlinear inductance.

10. The method of manufacturing an impedance-matched josephson parametric amplifier according to claim 8, wherein the capacitor (22) is formed by sandwiching an insulating layer between two superconducting plates, the insulating layer being a natural oxide layer on the surface of the aluminium film.

11. The method of manufacturing an impedance-matched josephson parametric amplifier according to claim 8 or 10, characterized in that,

-The impedance of the first coplanar waveguide (11) is 50Ω;

Wherein L is the microwave wavelength of the signal to be amplified.

12. A communication module comprising the impedance-matched josephson parametric amplifier of any of claims 1-3 for amplifying signals; and a port for outputting a signal amplified by said impedance-matched josephson parametric amplifier.