[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN108242426B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

Info

Publication number
CN108242426B
CN108242426B CN201611213398.2A CN201611213398A CN108242426B CN 108242426 B CN108242426 B CN 108242426B CN 201611213398 A CN201611213398 A CN 201611213398A CN 108242426 B CN108242426 B CN 108242426B
Authority
CN
China
Prior art keywords
end structure
cavity
semiconductor device
structure body
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611213398.2A
Other languages
Chinese (zh)
Other versions
CN108242426A (en
Inventor
梁凯智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Industrial Utechnology Research Institute
Original Assignee
Shanghai Industrial Utechnology Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Industrial Utechnology Research Institute filed Critical Shanghai Industrial Utechnology Research Institute
Priority to CN201611213398.2A priority Critical patent/CN108242426B/en
Priority to PCT/CN2017/078829 priority patent/WO2018113132A1/en
Priority to TW106117273A priority patent/TWI647795B/en
Publication of CN108242426A publication Critical patent/CN108242426A/en
Application granted granted Critical
Publication of CN108242426B publication Critical patent/CN108242426B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4817—Conductive parts for containers, e.g. caps

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

The application provides a semiconductor device and a manufacturing method thereof, the semiconductor device is provided with a cavity which is formed by enclosing of a conductive material, the cavity can buffer acting force when an active end structure body and a passive end structure body are contacted with each other, in addition, the conductive material can conduct away static electricity generated by the contact, the generation of a static electricity effect is avoided, and therefore the problems of adhesion and product failure caused by touch and impact are avoided.

Description

Semiconductor device and manufacturing method thereof
Technical Field
The present disclosure relates to semiconductor manufacturing technologies, and particularly to a semiconductor device and a manufacturing method thereof.
Background
When a miniaturized mechanical sensor developed and manufactured by a semiconductor manufacturing process, such as an accelerometer, a gyroscope, an oscillator, a silicon microphone, a pressure gauge, and the like, is disturbed by an external physical quantity, such as vibration, falling, impact, and the like, a microstructure moves in a three-dimensional space, deformation of the microstructure occurs, and the surfaces of the microstructure may contact each other.
When two or more microstructures collide with each other and contact each other, one of the microstructures is called an active end structure, and the other microstructure is called a passive end structure. Because at the microscopic scale, van der Waals' force exists which attracts each other in addition to the frictional force generated during the contact time.
For the friction force, surface peeling is generated due to the abrasion, and the peeled particles cause interference sources in the operating environment and electrical property at a later date, even cause the transient or permanent failure of the device, and further affect the quality and the service life of the product. To improve the wear situation, in addition to the design of the transparent structure, the structural rigidity is designed to be as strong as possible to reduce the impact on the surface of another structure, but the lost is the sensitivity of the sensor. In addition, the material selection of the contact surface, the selection of the material with strong hardness and non-brittle material is another way.
For van der waals force, because of unavoidable force at microscopic scale, when the touch time is long, due to the increase of surface energy, micro-welding action is generated, so that permanent bonding is formed between the two structures, which is the main cause behind adhesion, and the final device is permanently failed.
Generally, an interface modification method is usually adopted, in which a layer of hydrophobic and low surface energy organic material is coated on the surface where the two touch, so as to greatly reduce the surface energy, which is bonded and adhered together by covalent bonding generated by long-term contact during the collision process of the two. In addition, the contact surface area of the two collisions is reduced, and the small bump design is adopted to greatly reduce the contact area of the collisions and also greatly reduce the contact area range of covalent bonding. Meanwhile, the spring restoring force of the structural body is larger than the bonding force of the surface energy, so that the situation of adhesion failure can be avoided, but the limit of the sensitivity and the dynamic range design of the sensor is directly influenced. The existence of friction and surface energy is inevitable basic physical energy, and is not limited to the design of the structure, the selection of the material of the contact surface, the surface modification, and the like. In addition, a group or more than one group of spring structures are designed on the passive end structure and at the position with high contact probability through the design concept of soft springs, and the spring structures are used for buffering and absorbing energy.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
In the prior art, although various methods are adopted, the problem that the product is permanently failed due to the fact that a mechanical structure is sticky due to long-time touch and impact is still difficult to avoid.
The application provides a semiconductor device and a manufacturing method thereof, the semiconductor device is provided with a cavity which is formed by enclosing of a conductive material, the cavity can buffer acting force when an active end structure body and a passive end structure body are contacted with each other, in addition, the conductive material can conduct away static electricity generated by the contact, the generation of a static electricity effect is avoided, and therefore the problems of adhesion and product failure caused by touch and impact are avoided.
According to an aspect of the embodiments of the present application, there is provided a semiconductor device having an active end structure body and a passive end structure body that are capable of relative movement and contact with each other,
at least one of the active end structure and the passive end structure has a cavity,
the cavity is formed into a containing space in which,
the cavity is enclosed by a bottom and an outer wall, the outer wall protrudes towards the direction of the relative movement relative to the bottom,
the outer wall and the bottom are both of an electrically conductive material,
the portion of the active end structure body and the passive end structure body that are in contact due to the relative movement are located on an outer surface of the outer wall.
According to an aspect of an embodiment of the present application, wherein,
the conductive material is a metal material.
According to an aspect of an embodiment of the present application, wherein,
the cavity is a sealed cavity or is communicated with the outside.
According to an aspect of an embodiment of the present application, wherein,
the accommodating space is vacuum or filled with a medium.
According to an aspect of an embodiment of the present application, wherein,
the medium is a gas and/or a high molecular material.
According to an aspect of an embodiment of the present application, wherein,
the direction of the relative motion is parallel or perpendicular to the substrate surface of the semiconductor device.
According to an aspect of the embodiments of the present application, there is provided a method of manufacturing a semiconductor device having an active end structure body and a passive end structure body that are capable of relative movement and contact with each other,
the manufacturing method comprises the following steps:
forming an active end structure body and a passive end structure body; and
a cavity is formed, and the inner wall of the cavity,
wherein the cavity is formed in at least one of the active end structure and the passive end structure, and an accommodating space is formed in the cavity,
the cavity is enclosed by a bottom and an outer wall, the outer wall protrudes towards the direction of the relative movement relative to the bottom,
the outer wall and the bottom are both of an electrically conductive material,
the portion of the active end structure body and the passive end structure body that are in contact due to the relative movement are located on an outer surface of the outer wall.
According to an aspect of an embodiment of the present application, wherein,
forming the cavity after forming the active end structure and the passive end structure,
and, the step of forming the cavity includes: (corresponding to relative movement in the vertical direction)
Forming a patterned first conductive material layer on the surface of the active end structure body and/or the passive end structure body to serve as the bottom;
forming a dielectric layer on the surface of the bottom; and
forming a second patterned conductive material layer on the surface of the dielectric layer to serve as the outer wall;
wherein the outer wall and the bottom enclose to form the cavity.
According to an aspect of an embodiment of the present application, wherein,
forming the cavity before forming the active end structure body and the passive end structure body,
and, the step of forming the cavity includes: (corresponding to relative movement in the horizontal direction)
And forming a hole in the area of the conductive material corresponding to the active end structure body and/or the passive end structure body, wherein the inside of the hole is used as the cavity.
According to an aspect of an embodiment of the present application, wherein,
the step of forming the cavity further comprises:
filling a dielectric material in the hole; and
and covering an insulating medium layer at the opening of the hole.
The beneficial effect of this application lies in: the acting force when can cushion the initiative end structure body and contact each other with passive end structure body to, can lead away the static that the contact produced, avoid the electrostatic effect to produce, from this, avoid touching and strikeing the glutinous and product failure problem that leads to with the striking.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic view of a semiconductor device of the present embodiment;
fig. 2 is another schematic view of the semiconductor device of the present embodiment;
FIG. 3 is still another schematic view of the semiconductor device of the present embodiment
FIG. 4 is a schematic view of a method for forming a cavity in a passive end structure according to the present embodiment;
fig. 5 is a schematic view of the method of forming a semiconductor device of the present embodiment.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the present application, the substrate of the semiconductor device may be a wafer commonly used in the field of semiconductor manufacturing, such as a Silicon wafer, a Silicon-On-Insulator (SOI) wafer, a Silicon germanium wafer, a glass wafer (Quartz) or a Gallium Nitride (GaN) wafer, etc.; the wafer may be a wafer that has not been processed by the semiconductor process, or may be a wafer that has been processed by the semiconductor process, such as a wafer that has been processed by ion implantation, etching and/or diffusion.
In the present application, the active end structure and/or the passive end structure may be movable in a vertical direction (Z) and/or a horizontal direction (X-Y).
Example 1
The present application provides a semiconductor device in embodiment 1, and fig. 1 is a schematic view of the semiconductor device of this embodiment.
As shown in fig. 1, the semiconductor device may have an active terminal structure body and a passive terminal structure body that are relatively movable and in contact with each other.
In this embodiment, as shown in fig. 1, at least one of the active end structure and the passive end structure has a cavity 1, a receiving space is formed in the cavity, the cavity may be enclosed by a bottom and an outer wall, both the outer wall and the bottom are made of conductive materials, where the outer wall is an upper conductive layer in the figure, and the bottom is a lower conductive layer in the figure. The outer wall protrudes in the direction of relative movement with respect to the bottom, and the portion of the active end structure body and the passive end structure body that are contacted due to the relative movement are located on the outer surface of the outer wall.
According to this embodiment, this cavity can cushion the effort when active end structure and passive end structure contact each other to this conducting material can lead away the static that the contact produced, avoids the electrostatic effect to produce, from this, avoids touching and strikeing the sticky and product failure problem that leads to.
In this embodiment, the conductive material may be a metal material.
In this embodiment, the cavity may be a sealed cavity or communicate with the outside.
In this embodiment, the accommodating space may be vacuum or filled with a medium, wherein the filled medium may be a gas and/or a polymer material, and the polymer material is as described in fig. 1.
In the present embodiment, as shown in fig. 1, the direction of the relative movement is indicated by an arrow, and the direction may be perpendicular to the substrate surface of the semiconductor device.
However, the present embodiment is not limited thereto, and the direction of the relative movement may be parallel to the substrate surface of the semiconductor device.
Fig. 2 is another schematic view of the semiconductor device of the present embodiment, and fig. 3 is yet another schematic view of the semiconductor device of the present embodiment. As shown in fig. 2 and 3, the direction of the relative movement (the direction of the arrow) is parallel to the substrate surface of the semiconductor device. In fig. 2 and 3, the electric conductor of the passive end structure forms the outer wall and the bottom of the cavity 1, and the cavity may be filled with a polymer material. In addition, the active end structure may have a conductor; the substrate surface may be provided with a non-conductive medium. Furthermore, in fig. 3, the opening of the cavity 1 may be covered with a non-conductive medium 2.
Next, a method for manufacturing the semiconductor device of the present embodiment will be described.
In this embodiment, the active end structure and the passive end structure may be formed first, and then the cavity may be formed in the active end structure and/or the passive end structure.
For example, the step of forming the cavity may include:
step 101, forming a patterned first conductive material layer on the surface of the active end structure body and/or the passive end structure body to serve as the bottom;
102, forming a dielectric layer on the surface of the bottom; and
step 103, forming a patterned second conductive material layer on the surface of the dielectric layer to serve as the outer wall, wherein the outer wall and the bottom enclose to form the cavity.
Fig. 4 is a schematic diagram of a method for forming a cavity in a passive end structure according to this embodiment, which corresponds to fig. 1, and the material represented by each pattern in fig. 4 is the same as that in fig. 1. As shown in fig. 4, the method includes:
(1) forming a patterned lower conductive layer on a substrate: on the substrate, there can be CMOS front-end transistor and back-end metal pull wire; in this step, the lower conductive layer may be formed and patterned by evaporation or sputtering, and may be made of a metal material such as titanium nitride (TiN), silicon carbide (SiC), or a composite of titanium nitride (TiN) and aluminum copper alloy (AlCu), and the thickness thereof may be 50 to 1000 angstroms.
(2) A dielectric layer, which may be, for example, a polymer layer, is formed. For example, polymer coating can be performed by coating or vapor deposition, such as photo-sensitive polymer material, such as photoresist with high viscosity coefficient, and a polymer pattern can be defined by a series of processing steps, such as coating, exposure, development, UV light repairing and baking, and the area size of the polymer pattern can be varied from 1 micrometer square to 10000 micrometers square.
(3) Forming an outer wall. For example, an upper conductive layer is applied over the polymer material and patterned.
(4) The openings are defined by using conventional semiconductor lithography and etching to facilitate the next step of releasing the polymer material.
(5) The polymer material is released by plasma etching to form a film cavity.
(6) The active structure may be formed by a series of surface micromachining or bulk micromachining processes, and the active structure may include at least one or more movable structures, springs, and fixed terminals.
Among the above steps, (4) and (5) are optional steps.
In the present embodiment, the semiconductor device can also be manufactured in other manners. For example, before the active end structure and the passive end structure are formed, a cavity may be formed in a region corresponding to the active end structure and the passive end structure, and then the active end structure and the passive end structure are formed, where the step of forming the cavity may include: and forming a hole in the area of the conductive material corresponding to the active end structure body and/or the passive end structure body, wherein the inside of the hole is used as the cavity.
Fig. 5 is a schematic view of a method of forming a semiconductor device according to the present embodiment, and corresponds to fig. 3, and the material represented by each pattern in fig. 5 is the same as that in fig. 3. As shown in fig. 5, the method includes:
(1) the main structure thickness is defined starting from the substrate and may be 1 micron to 100 microns, with a modulation in thickness depending on the microsensor device application. The thickness of the main structure can be preset by surface micro-machining or body micro-machining.
(2) One or more holes are defined by photolithography and are designed to be about 2 to 10 microns near the edge where the sidewall structures will collide at a later date. The diameter of the hole falls between 5 microns and 100 microns, but the etching depth does not reach the bottom.
(3) The filling of polymer material, such as polymer material sensitive to light, can be performed by a series of processes such as general coating, exposure, development, UV light repairing, and baking.
(4) Depositing and patterning the upper layer of non-conductive medium, which may be a composite material of silicon oxide and silicon nitride or silicon nitride with a thickness of about 500-3000 angstroms, to cover the top layer of polymer material, and adjusting the etching selection ratio according to the final step when releasing the sensor element.
(5) At least one hole is formed in the upper layer without the conductive medium, so that the process requirement of subsequent release of the high polymer material is facilitated.
(6) The polymer material is released by plasma activation.
(7) An active end structure is formed, which contains at least one or more movable structures, a spring, and a fixed end point.
(8) Removing the non-conductive medium below the active end structure body and the passive end structure body by a gasification dry method, so that the active end structure body is released; alternatively, the region corresponding to the active terminal structure is previously provided with a well-defined front groove, and thus, step (8) is not required.
In the present embodiment, steps (3) - (6) may be optional steps.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.

Claims (10)

1. A semiconductor device having an active end structure and a passive end structure, the active end structure and the passive end structure being capable of relative movement and being in contact with each other,
at least one of the active end structure and the passive end structure has a cavity,
the cavity is formed into a containing space in which,
the cavity is enclosed by a bottom and an outer wall, the outer wall protrudes towards the direction of the relative movement relative to the bottom,
the outer wall and the bottom are both of an electrically conductive material,
the portion of the active end structure body and the passive end structure body that are in contact due to the relative movement are located on an outer surface of the outer wall.
2. The semiconductor device of claim 1,
the conductive material is a metal material.
3. The semiconductor device of claim 1,
the cavity is a sealed cavity or is communicated with the outside.
4. The semiconductor device of claim 1,
the accommodating space is vacuum or filled with a medium.
5. The semiconductor device of claim 4,
the medium is a gas and/or a high molecular material.
6. The semiconductor device of claim 1,
the direction of the relative motion is parallel or perpendicular to the substrate surface of the semiconductor device.
7. A method of manufacturing a semiconductor device having an active terminal structure body and a passive terminal structure body that are capable of relative movement and contact with each other,
the manufacturing method comprises the following steps:
forming an active end structure body and a passive end structure body; and
a cavity is formed, and the inner wall of the cavity,
wherein the cavity is formed in at least one of the active end structure and the passive end structure, and an accommodating space is formed in the cavity,
the cavity is enclosed by a bottom and an outer wall, the outer wall protrudes towards the direction of the relative movement relative to the bottom,
the outer wall and the bottom are both of an electrically conductive material,
the portion of the active end structure body and the passive end structure body that are in contact due to the relative movement are located on an outer surface of the outer wall.
8. The manufacturing method of the semiconductor device according to claim 7,
forming the cavity after forming the active end structure and the passive end structure,
and, the step of forming the cavity includes:
forming a patterned first conductive material layer on the surface of the active end structure body and/or the passive end structure body to serve as the bottom;
forming a dielectric layer on the surface of the bottom; and
forming a second patterned conductive material layer on the surface of the dielectric layer to serve as the outer wall;
wherein the outer wall and the bottom enclose to form the cavity.
9. The manufacturing method of the semiconductor device according to claim 7,
forming the cavity before forming the active end structure body and the passive end structure body,
and, the step of forming the cavity includes:
and forming a hole in the area of the conductive material corresponding to the active end structure body and/or the passive end structure body, wherein the inside of the hole is used as the cavity.
10. The method for manufacturing a semiconductor device according to claim 9,
the step of forming the cavity further comprises:
filling a dielectric material in the hole; and
and covering an insulating medium layer at the opening of the hole.
CN201611213398.2A 2016-12-23 2016-12-23 Semiconductor device and manufacturing method thereof Active CN108242426B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201611213398.2A CN108242426B (en) 2016-12-23 2016-12-23 Semiconductor device and manufacturing method thereof
PCT/CN2017/078829 WO2018113132A1 (en) 2016-12-23 2017-03-30 Semiconductor device and manufacturing method therefor
TW106117273A TWI647795B (en) 2016-12-23 2017-05-24 Semiconductor device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611213398.2A CN108242426B (en) 2016-12-23 2016-12-23 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN108242426A CN108242426A (en) 2018-07-03
CN108242426B true CN108242426B (en) 2020-04-07

Family

ID=62624499

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611213398.2A Active CN108242426B (en) 2016-12-23 2016-12-23 Semiconductor device and manufacturing method thereof

Country Status (3)

Country Link
CN (1) CN108242426B (en)
TW (1) TWI647795B (en)
WO (1) WO2018113132A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108242403A (en) * 2016-12-27 2018-07-03 冠宝科技股份有限公司 A kind of no substrate semiconductor encapsulation making method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102449906A (en) * 2010-03-18 2012-05-09 松下电器产业株式会社 Mems element, and manufacturing method of mems element
CN102589760A (en) * 2012-02-27 2012-07-18 中国科学院苏州纳米技术与纳米仿生研究所 Minitype capacitance-type mechanical sensor and preparation method thereof
WO2015186728A1 (en) * 2014-06-05 2015-12-10 株式会社村田製作所 Mems device
CN105776121A (en) * 2014-12-22 2016-07-20 立锜科技股份有限公司 Micro-electro-mechanical system chip

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845664B1 (en) * 2002-10-03 2005-01-25 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration MEMS direct chip attach packaging methodologies and apparatuses for harsh environments
US7812418B2 (en) * 2008-07-29 2010-10-12 Fortemedia, Inc Chip-scaled MEMS microphone package
TWI416686B (en) * 2010-08-06 2013-11-21 Unimicron Technology Corp Mems carrier and fabrication method thereof
DE102010062056B4 (en) * 2010-11-26 2018-09-27 Robert Bosch Gmbh Micromechanical component
US9586811B2 (en) * 2011-06-10 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with moving members and methods for making the same
US9201236B2 (en) * 2012-11-27 2015-12-01 Pixtronix, Inc. Display apparatus with stiction reduction features
US9290380B2 (en) * 2012-12-18 2016-03-22 Freescale Semiconductor, Inc. Reducing MEMS stiction by deposition of nanoclusters
US20150277097A1 (en) * 2014-03-28 2015-10-01 Qualcomm Mems Technologies, Inc. Flexible ems device using organic materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102449906A (en) * 2010-03-18 2012-05-09 松下电器产业株式会社 Mems element, and manufacturing method of mems element
CN102589760A (en) * 2012-02-27 2012-07-18 中国科学院苏州纳米技术与纳米仿生研究所 Minitype capacitance-type mechanical sensor and preparation method thereof
WO2015186728A1 (en) * 2014-06-05 2015-12-10 株式会社村田製作所 Mems device
CN105776121A (en) * 2014-12-22 2016-07-20 立锜科技股份有限公司 Micro-electro-mechanical system chip

Also Published As

Publication number Publication date
TW201838099A (en) 2018-10-16
TWI647795B (en) 2019-01-11
WO2018113132A1 (en) 2018-06-28
CN108242426A (en) 2018-07-03

Similar Documents

Publication Publication Date Title
CN110115048B (en) Microelectromechanical system and microelectromechanical system microphone package
JP5677971B2 (en) Method of replacing a relatively large MEMS device with a plurality of relatively small MEMS devices
US7038150B1 (en) Micro environmental sensing device
JP5068742B2 (en) Manufacturing method of micro machine parts
US6686642B2 (en) Multi-level integrated circuit for wide-gap substrate bonding
US8227285B1 (en) Method and structure of monolithetically integrated inertial sensor using IC foundry-compatible processes
CN106995204A (en) Micro electro-mechanical system packaging
CN107337175B (en) Semiconductor structure and manufacturing method thereof
US6008138A (en) Process for making micromechanical structures
KR101672628B1 (en) Single diaphragm transducer structure
CN109422235A (en) The manufacturing method of micro electro-mechanical system packaging body and anti-stiction device
WO2007004119A2 (en) A method of manufacturing a mems element
TWI700238B (en) Method to improve stiction by roughing surface
KR20170138947A (en) A microelectromechanical device and a method of manufacturing a microelectromechanical device
US11542151B2 (en) MEMS apparatus with anti-stiction layer
US10053358B2 (en) MEMS structure with graphene component
CN108242426B (en) Semiconductor device and manufacturing method thereof
Xiong et al. A low-g MEMS inertial switch based on direct contact sensing method
JP2015020273A (en) Reducing microelectromechanical systems stiction by formation of silicon carbide layer
US10427929B1 (en) Forming a eutectic bond between a wafer having an anti-stiction coating and a cap wafer
CN114314501B (en) Forming method of MEMS cavity structure
JP2009178815A (en) Micromachine apparatus and method for manufacturing the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant