CN108198832A - Imaging sensor, electronic device and its manufacturing method - Google Patents
Imaging sensor, electronic device and its manufacturing method Download PDFInfo
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- CN108198832A CN108198832A CN201810086135.2A CN201810086135A CN108198832A CN 108198832 A CN108198832 A CN 108198832A CN 201810086135 A CN201810086135 A CN 201810086135A CN 108198832 A CN108198832 A CN 108198832A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 224
- 230000008569 process Effects 0.000 description 13
- 238000001259 photo etching Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- FKOKUHFZNIUSLW-UHFFFAOYSA-N 2-Hydroxypropyl stearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(C)O FKOKUHFZNIUSLW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229940093625 propylene glycol monostearate Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This disclosure relates to imaging sensor, electronic device and its manufacturing method.In one embodiment, this disclosure relates to which imaging sensor, the imaging sensor can include：Substrate includes first surface and the second surface opposite with first surface；Pixel sensor array is arranged in the substrate；Compound grid is arranged in above the first surface of the substrate, and with the opening for corresponding to the element sensor in the pixel sensor array；Wherein described composite grid lattice have dielectric layer, the hard mask layer being arranged in above the dielectric layer and around the dielectric layers and the metal layer of the hard mask layer.
Description
Technical field
The disclosure relates generally to technical field of semiconductors, more particularly, to imaging sensor and its manufacturing method and
Electronic device and its manufacturing method including the imaging sensor.
Background technology
Many modern electronic equipments are related to the electronic device using imaging sensor, for example, slr camera, general digital phase
Machine, video camera, mobile phone, automotive electronics etc..It can be by complementary metal oxide semiconductor (CMOS) technology or charge coupled device
(CCD) technology manufactures Conventional image sensor.The operation of typical imaging sensor is as follows:Light is incident on lenticule, micro-
Lens are focused the light by optical filter on light-sensitive element.Light-sensitive element converts light to the electricity proportional to the intensity of incident light
Signal.In the image sensor, in light-sensitive element electric signal be coupled to amplification and reading circuit (such as CMOS transistor) with
Image is generated based on the light captured in light-sensitive element.
The IC manufacturing process of standard can use the imaging sensor of preceding illuminated (" FSI ") and the figure of back-illuminated type (" BSI ")
As sensor.In FSI imaging sensors, metal layer is placed between lenticule and light-sensitive element.FSI technologies are used in manufacture
Imaging sensor during, therefore generate across the channel of metal layer and advance to light-sensitive element from lenticule for light.However,
In FSI imaging sensors, the light of light-sensitive element is reached across the channel to decay, and dropped so as to cause the quantum efficiency of light-sensitive element
It is low, and the susceptibility of imaging sensor is caused to decline.In addition, the interface between different materials of the light in FSI imaging sensors
The internal reflection at place emits after can causing, and can then be left from the bottom side of metal layer and be reflected into neighborhood pixels sensor
It is interior, so as to cause optical crosstalk.
In the imaging sensor for using BSI, metal layer, polysilicon layer, diffusion layer are located on the side of substrate and photosensitive
Element is exposed to the light from substrate opposite side.It therefore, there is no need to generate the path for arriving at light-sensitive element across metal stack.So
And BSI imaging sensors between the pixels may also can there are crosstalks.
Therefore, it is always existed in this field to having the demand of improved imaging sensor.
Invention content
In order to solve one or more defects in the presence of the prior art, the disclosure provides a kind of new skill of this field
Art.
The aspect of the disclosure can include imaging sensor, the manufacturing method of imaging sensor, including the imaging sensor
Electronic device and the electronic device at least one of manufacturing method.
According to the disclosure in a first aspect, providing a kind of imaging sensor.The imaging sensor can include：Substrate,
Include first surface and the second surface opposite with first surface；Pixel sensor array is arranged in the substrate；Composite grid
Lattice are arranged in above the first surface of the substrate, and with the pixel sensing corresponded in the pixel sensor array
The opening of device；Wherein described composite grid lattice have dielectric layer, the hard mask layer being arranged in above the dielectric layer and enclose
Around the dielectric layer and the metal layer of the hard mask layer.
According to the second aspect of the disclosure, a kind of electronic device is provided.The electronic device can include as described above
Imaging sensor.
According to the third aspect of the disclosure, a kind of method for manufacturing imaging sensor is provided.This method can include：It carries
For substrate, wherein pixel sensor array is formed in substrate；It is formed in sequence in the top of the first surface of the substrate
The dielectric layer and hard mask layer of stacking；To the hard mask layer pattern, correspond to institute to be formed in the hard mask layer
State the first opening of the element sensor in pixel sensor array；It is right by the use of the hard mask layer after patterning as mask
The dielectric layer is patterned, to form the second opening for corresponding to the described first opening in the dielectric layer；So
Afterwards metal layer is formed in the top of the first surface of the substrate；The metal layer is patterned, to remove described second
Metal layer at the bottom of opening.
According to the fourth aspect of the disclosure, a kind of method for manufacturing electronic device is provided, this method can include the use of
As described above method manufactures imaging sensor.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
With reference to attached drawing, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 shows the schematic plan of imaging sensor according to some embodiments of the present invention.
Fig. 2A and Fig. 2 B show schematically cutting for a part for imaging sensor according to some embodiments of the present invention
Face figure.
Fig. 3 shows the flow chart of manufacture imaging sensor according to some embodiments of the present invention.
Fig. 4-Figure 12 is respectively illustrated in each step that imaging sensor is manufactured according to some embodiments of the present disclosure
The schematic sectional view at place.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeated explanation.In the present specification, using similar mark
Number and letter represent similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. does not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition have
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as the part of this specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the image sensor, the lattice structure of pixel region is to improving the uniformity of each pixel region reception light and preventing light
Crosstalk is learned to play an important role.Due to the reduction of device size, to receiving the uniformity of light and preventing optical crosstalk requirement
It improves, it is desirable to which lattice structure improves depth-width ratio with the ability for expanding light-receiving area and improving prevention optical crosstalk.However, this is right
Technique proposes higher requirement.
In general, by setting metal grate and using the impermeable light characteristic of metal grate, preventing the light between different pixels
Crosstalk, but this metal grate layer process always exists some problems.With the diminution of device, the face shared by metal grate
Product can influence the effective area of pixel, therefore, it is desirable to the area shared by metal grate is small, make thin and tall form, but this becomes
Technologic challenge.On the one hand, the residual defects of the etching of metal gate compartment can influence the light transmittance of pixel region so that into
As uneven, so as to influence the performance of imaging sensor.In still further aspect, as depth-width ratio increases, the etching of metal grate
Become more difficult, and metal grate is susceptible to phenomenon of collapsing.
Present inventors have recognized that compound lattice structure is beneficial, particularly for the depth-width ratio for increasing grid, Ke Yiyong
The dielectric layer easily etched replaces all metal and associated materials, then comes in external one layer of metal of plating of dielectric layer
Prevent optical crosstalk.The presence of dielectric layer reduces relevant technology difficulty and cost, improves relative altitude；And the gold of side wall
Category can play the role of preventing crosstalk, increase quantum efficiency and improving color separated.
Furthermore, it is possible to mask is used as by the hard mask layer after patterning to be patterned to dielectric layer, then to pattern
Hard mask layer and dielectric layer after change plate one layer of metal.Technique in this way, hard mask layer can be used as compound grid knot
A part for structure, so as to further increase the depth-width ratio of compound lattice structure.
By above compound lattice structure, improve grid height and reduce raster width, improve the reception of each pixel
The area of light improves anti-crosstalk ability and reduces technology difficulty.
With reference to figure 1, the vertical view of imaging sensor 10 according to some embodiments of the present invention is provided.Imaging sensor
10 include to the photaesthesia of first surface incidence by substrate in substrate going and/or arranging the element sensor battle array arranged
Row 102.For purposes of brevity, Fig. 1 shows the pixel sensor array 102 with 3 × 3 element sensors, but should
The understanding, the pixel sensor array 102 can include the element sensor with any suitable number and pattern.Pixel senses
Each element sensor in device array 102 includes corresponding light-sensitive element and pixel circuit, and via deep trench isolation (DTI)
Structure 108 realizes the electrically and/or optically isolation between each element sensor, so as to reduce crosstalk and dark current and improve sense
Survey performance.DTI structures 108 are arranged between the adjacent element sensor in pixel sensor array 102, and from substrate
First surface extends to the position in substrate.
102 top of pixel sensor array is provided with corresponding color filter array.In one embodiment, as shown in Figure 1,
Color filter array can represent the Bayer template chromatic filter for including red, green and blue filter.Certainly, it is possible to use
Other colour filter templates and color (for example, cyan, yellow, carmetta).Color filter array is kept apart by compound grid 110, with
Prevent optical crosstalk.
Fig. 2A shows the schematic sectional view of a part for imaging sensor 20 according to some embodiments of the present invention.
In embodiment, which can include pixel region 200 and the peripheral circuit region being arranged on around pixel region 200
(not shown).For example comprising red pixel sensor 200A, green pixel sensors 200B and blue pixel in pixel region 200
Sensor 200C.Note that in the sectional view, for simplicity, three element sensors are illustrated only；However, in reality
In device, it will thus provide the array of thousands of or more or less element sensors is generally positioned to be row and column.In addition,
Element sensor can not also be arranged according to the sequence shown in Fig. 2A.
Each element sensor includes the light for being configured as converting incident radiation into electric signal being arranged in substrate 100
Quick element and corresponding amplifier (not shown), light-sensitive element is, for example, photodiode, and amplifier is, for example, transistor.
For example, photodiode can include corresponding first with the first doping type (for example, N-shaped doping) in substrate 100
There is second doping type different from the first doping type above first area in region (not shown) and substrate 100
The corresponding second area (not shown) of (for example, p-type doping).
In imaging sensor 20, DTI structures 108 be arranged between adjacent photosensor with by neighbouring light-sensitive element that
This isolation.Deep trench is formed in substrate 100 by using etching technics, fills the deep trench to be formed with material later to be formed
DTI structures 108.Dielectric layer material can be used, such as oxide material fills deep trench to form DTI structures 108, wherein electricity
Dielectric layer material can be with high dielectric constant material.Can also by using dielectric substance cover deep trench side wall and bottom surface then
Deep trench is filled with metal material to form DTI structures 108, so as to which DTI structures 108 can be electrically isolated and prevent optics string
It disturbs.DTI structures 108 are arranged between the adjacent element sensor in pixel sensor array 102 and are sensed around pixel
Device, and extend to the position in substrate from the first surface 1001 of substrate 100.
Anti-reflection coating (" ARC ") 104 is arranged in 100 top of substrate along the first surface 1001 of substrate 100.ARC
104 separate substrate 100 and the compound grid 110 above substrate 100.ARC 104 can be silicon nitride (SiN) layer, oxygen
It can also be other anti-reflection coating to change tantalum (TaO) layer or silicon oxynitride (SiON) layer, ARC 104.
Compound grid 110 can be included in the dielectric layer 1102 and hard mask layer that 100 top of substrate stacks in sequence
1101 and around dielectric layer 1102 and the metal layer 1103 of hard mask layer 1101.In one embodiment, dielectric layer
1102 and the sum of the thickness of hard mask layer 1101 can be between 0.5 micron to 1 micron, and the thickness of metal layer 1103 can be with
It is provided with helping reduce optical crosstalk.Structure dielectric layer 1102, hard mask layer 1101 and the metal layer set in this way
The 1103 compound grids formed have increased depth-width ratio.The larger compound grid 110 of the depth-to-width ratio that sets in this way, can be with
Blocking light transmits to help to reduce crosstalk between adjacent pixel sensor.
Dielectric layer 1102 can be by oxide (such as, silica), nitride (such as, silicon nitride) and oxynitride
(such as, silicon oxynitride) is formed, and can also be formed by other interlayer dielectric layers.Other interlayer dielectric layers can be TEOS oxidations
Object, phosphosilicate glass (PSG), fluoride amorphous carbon, parylene, BCB (benzocyclobutene), polyimides, Qi Tahe
Suitable material or its combination.Certainly, dielectric layer 1102 can also be formed by high dielectric constant material.
Hard mask layer 1101 can be formed by lighttight material, such as can be formed by titanium nitride (TiN).Metal layer
1103 can be formed by any appropriate metal, including but not limited to tungsten, copper or aluminum bronze.
Color filter array 106 is arranged in each pixel sensing corresponded in pixel sensor array 102 of compound grid 110
Among the opening of device, these openings concentrate on the center of element sensor or are slightly displaced from.Color filter array 106 can include red
Color colour filter, green color filter and blue color filter, certainly, color filter array 106 can have other colors as needed
Colour filter and there can be other any suitable arrangement modes as required.Color filter array 106 can include coloring or
The material of dyeing, such as acrylic acid.For example, polymethyl methacrylate (" PMMA ") or propylene glycol monostearate (" PGMS ")
It is suitable material, pigments or dyes can be increased using them to form colour filter.However, it is also possible to use other materials.
Lenticule 112 is formed on color filter array 106.Lenticule 112 can be by transparent organic material, inorganic chemical
Object material is made, and with convex upper surface.Lenticule 112 can concentrate on the center of element sensor or be slightly displaced from.
In addition, imaging sensor 20 can also include at second surface 1002 or the metallization of the back-end process (BEOL) of top
Stack.BEOL metallization stacks part can include the multiple metal layers being stacked in interlayer dielectric layer 114.BEOL metallizes
One or more contacts of stack extend to element sensor from metal layer.In addition, the one of BEOL metallization stack parts
A or multiple through-holes extend between metal layer with interconnection metallization.Metal interconnecting wires can be aluminium, aluminium/silicon/copper alloy,
Titanium, titanium nitride, tantalum, tantalum nitride, tungsten, polysilicon, metal silicide or its metal combined, metal silicide therein can wrap
Include nickle silicide, cobalt silicide, tungsten silicide, tantalum silicide, titanium silicide, platinum silicide, silication erbium, palladium silicide or its combination.
Other than example arrangement described here, substrate can also include other devices, be included in the another of substrate
Active transistor, diode, capacitor, resistor, memory cell, analog device, filter, the transceiver formed in part
Deng.Moreover, after imaging sensor of the present invention is formed, encapsulating material can be arranged on above substrate, to have been formed
Whole micromodule, such as, integrated circuit, solar cell, processor etc..
Fig. 2 B show the schematic cross-sectional of a part for the imaging sensor 20 of other embodiments according to the present invention
Figure.The embodiment also covers the upper table of hard mask layer 1101 with the embodiment shown in Fig. 2A the difference lies in metal layer 1103
Face.That is compound grid 110 is by dielectric layer 1102 and the stacking of hard mask layer 1101 and encirclement dielectric layer 1102
It is formed with the metal layer 1103 of the stacking of hard mask layer 1101.Configuration in this way can further improve compound grid 110
Depth-width ratio, and the thickness of the lighttight material of the upper surface of compound grid 110 can be increased, so as to further prevent light
Learn crosstalk.
Although the imaging sensor 20 shown in Fig. 2A and Fig. 2 B is BSI imaging sensors, but the invention is not restricted to this.Figure
Imaging sensor 20 shown in 2A is merely illustrative the example of the present invention, does not limit the scope of the invention.
With reference to figure 3, the flow chart of manufacture imaging sensor according to some embodiments of the present invention is provided.
In step S301, substrate is provided, pixel sensor array, DTI structures and other collection are included wherein in substrate
Into circuit.DTI structures extend to the position in substrate with by adjacent element sensor electricity and/or light from the first surface of substrate
Learn isolation.In addition, at the second surface of substrate or top can also include BEOL metal stack overlapping pieces.BEOL metal stacks overlapping piece can be with
Light-sensitive element in pixel sensor array and/or pixel circuit are connected to other logic circuits.
Substrate can be silicon substrate or other semi-conducting materials.Can use GaAs, germanium, silicon carbide, indium arsenide or
Indium phosphide or alloy semiconductor, such as, silicon germanium carbide, InGaP, InGaAsP etc..Substrate usually can be semi-conducting material
Wafer.In other embodiments, substrate may be provided as epitaxial layer on insulator, such as " SOI " layer.Semiconductor material
The wafer of material can be engaged or be stacked, and substrate can be one of these layers.Substrate is usually thinned by wafer grinding method,
Such as, (" CMP "), machinery wafer grinding or semiconductor etching are chemically-mechanicapolish polished.
In step s 302, anti-reflecting layer, dielectric layer and hard mask layer are sequentially formed above the first surface of substrate.
Shape the methods of chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD), atomic layer deposition (ALD), sputtering, evaporation can be passed through
Into anti-reflecting layer, dielectric layer and hard mask layer.
In step S303, hard mask layer is patterned, corresponds to element sensor to be formed in hard mask layer
First opening of the element sensor in array.Specifically, for example, by photoetching process so that resist layer exposes hard mask layer
To form the part of the first opening and cover the other parts of hard mask layer.Then pass through dry etching, wet etching etc.
Method removes by the part of the exposure of hard mask layer and retains the part covered by resist layer of hard mask layer.Photoetching work
Skill for example including coating resist layer, soft bakings, exposure, postexposure bake, develop and etc..
In step s 304, by the use of the hard mask layer after patterning as mask, dielectric layer is patterned, in electricity
The second opening for corresponding to the first opening is formed in dielectric layer.Specifically, in this step, using patterned hard mask layer as
Mask, by being performed etching the methods of dry etching, wet etching to exposed dielectric layer, so as to be formed in the dielectric layer
Corresponding to the second opening of the first opening.Due in this step using hard mask layer as mask, forming depth-width ratio ratio
Be not in the problem of resist layer remains in the technique of larger lattice structure.Further, since hard mask layer is as composite grid
A part for lattice structure, therefore the depth-width ratio of compound lattice structure can be improved, so as to further prevent optical crosstalk.
In step S305, metal layer is formed above the first surface of substrate.Specifically, chemical vapor deposition can be passed through
The methods of product (CVD), physical vapour deposition (PVD) (PVD), atomic layer deposition (ALD), sputtering, evaporation, plating, forms metal layer so that
Metal layer covers the bottom of dielectric layer and hard mask layer side wall, the surface of hard mask layer and the second opening after patterning
Place.
In step S306, metal layer is patterned, with the metal layer at the bottom of the second opening of removal.By this
Step forms compound grid, wherein compound grid has dielectric layer above the first surface of substrate, is arranged in dielectric
Layer top hard mask layer and around dielectric layer and the metal layer of hard mask layer, the compound grid, which further includes, in addition corresponds to
The first opening and the second opening of element sensor in pixel sensor array.
In one embodiment, photoetching process can be passed through so that resist layer is exposed at the second open bottom
Metal layer, and cover the other parts of metal layer.Reactive ion etching (" RIE ") or deep reactive ion can be used to carve later
Erosion (" DRIE ") performs the etching of metal layer using chemical reaction plasma or dry etching agent, the second opening of removal
Metal layer at bottom.Processing step in this way eliminates the metal layer at the bottom of the second opening and retains hard mask
Metal layer on the side wall of layer and dielectric layer and on the surface of hard mask layer.
In a preferred embodiment, directly metal layer is not performed etching by photoetching process, so as to remove the second opening
Metal layer at bottom and on the surface of hard mask layer, and retain the metal layer on the side wall of hard mask layer and dielectric layer.By
This, metal layer surrounds dielectric layer and hard mask layer.By the embodiment, due to not using photoetching process directly to metal layer
It performs etching, therefore reduces processing step.In addition, with the development of technique, the size of imaging sensor becomes less and less,
And the size of the first opening and the second opening also becomes less and less, therefore at the bottom for using the second opening of photoetching process removal
It is necessary to have the exposure techniques of enough accuracy during metal layer at portion to be aligned to open the first opening and second
Resist layer in mouthful is exposed.Further, since the depth-width ratio of opening (including the first opening and the second opening) is higher, therefore
During the metal layer at the bottom for using the second opening of photoetching process removal, need to be formed sufficiently thick resist layer with
The upper surface of the opening and metal layer is covered, there is also challenges for this abundant exposure to the resist layer in opening.Therefore, do not make
The requirement reduced to exposure technique and device is directly performed etching to metal layer with photoetching process, so as to reduce technique hardly possible
Degree.Further, since without using resist layer, resist layer will not occur and remain in the corner portion of the second open bottom asking
Topic.Further, since hard mask layer is formed by lighttight material, therefore even if not having metal layer on hard mask layer, can also prevent
Only optical crosstalk.
In step S307, color filter array is formed in the first opening and the second opening that are covered in side wall by metal layer.
The upper surface of color filter array is likely lower than, the upper surface greater than or equal to compound grid.Therefore, formed color filter array it
Afterwards, can by form planarization layer, planarization layer chemically-mechanicapolish polish and etc. come the upper table to color filter array
Face is planarized.
In step S308, lenticule is formed on color filter array.Lenticule can be by transparent organic material, inorganic
Compound-material is made, and the materials'use surface tension is patterned and flowed back to obtain convex upper surface.Lenticule can
To concentrate on the center of element sensor or be slightly displaced from.
Fig. 4-Figure 12 is respectively illustrated in each step that imaging sensor is manufactured according to some embodiments of the present disclosure
The schematic sectional view at place.Fig. 4 to Figure 12 shows the schematic sectional view of three element sensors, but people in the art
Member understands that imaging sensor can include multiple element sensors and other elements, and Fig. 4 to Figure 12 is merely to illustrating and painting
System.In addition, in order to be more clear the attached drawing of Fig. 4 to Figure 12, BEOL metallization stacks part therein and other members is omitted
Part.
In Fig. 4, it is illustrated the schematic sectional view obtained by the step S301 of Fig. 3.Substrate 100 includes the first table
Face 1001, pixel sensor array 102 and DTI structures 108.In Figure 5, it is illustrated and is obtained by the step S302 of Fig. 3
Schematic sectional view.1001 top of first surface of substrate 100 is formed with ARC 104, dielectric layer 1102 and hard mask
Layer 1101.In figure 6 and figure 7, it is illustrated the schematic sectional view obtained by the step S303 of Fig. 3.By using photoetching
Step formed resist layer 116 so that the resist layer 116 expose hard mask layer 1101 correspond to pixel sensor array
The part of element sensor in 102.Then the part is removed by etch step, so as to form the first opening 120.
Then in fig. 8, it is illustrated the schematic sectional view obtained by the step S304 of Fig. 3.By using patterning
Hard mask layer 1101 afterwards performs etching dielectric layer 1102 as mask, so as to form corresponding to the first opening 120
Second opening 130.
In fig.9, it is illustrated the schematic sectional view obtained by the step S305 of Fig. 3.In the first table of substrate 100
1001 top of face is formed with metal layer 1103, the side wall of the metal layer 1103 covering hard mask layer 1101 and dielectric layer 1102,
And the surface of the ARC 104 at the surface of hard mask layer 1101 and the bottom of the second opening 130.
In Figure 10 A, it is illustrated and is shown after the step of Fig. 9 by what photoetching process patterned metal layer 1103 obtained
Meaning property sectional view.As shown in Figure 10 A, the resist layer of the metal layer 1103 at the bottom of the second opening 130 of exposure is formd
118, then by etching technics, the metal layer 1103 being exposed is removed, so as to form compound grid.The compound grid includes lining
It hard mask layer 1101 above the dielectric layer 1102 of the top of bottom 100, dielectric layer and surrounds dielectric layer 1102 and covers firmly
The metal layer 1103 of mold layer 1101, in addition compound grid further include corresponding to the element sensor in pixel sensor array 102
Opening.
In fig. 1 ob, the schematic cross-sectional being illustrated after directly being patterned after the step of Fig. 9 to metal layer 1103
Figure.Directly metal layer 1103 is performed etching by not using lithography step, is eliminated at the bottom of the second opening 130 and hard
Metal layer 1103 on the surface of mask layer 1101, and the metal on the side wall of reservation hard mask layer 1101 and dielectric layer 1102
Layer 1103.Metal layer 1103 surrounds dielectric layer 1102 and hard mask layer 1101 as a result,.By the embodiment, due to not using
Photoetching process and directly metal layer is performed etching, therefore reduce processing step.In addition, due to not using photoetching process, because
This reduces the requirement to exposure technique and device, so as to reduce technology difficulty.Further, since without using resist layer,
The problem of being not in the corner portion that resist layer remains in 130 bottom of the second opening.Further, since hard mask layer 1101 is not by
The material of light transmission is formed, therefore even if not having metal layer on hard mask layer 1101, is also possible to prevent optical crosstalk.
In fig. 11, it is illustrated the schematic sectional view that step S307 shown in Fig. 3 is obtained.As shown in figure 11, side wall
Color filter array 106 is formd in the first opening 120 and the second opening 130 covered with metal layer 1103.The embodiment of Figure 11
Show a case that the upper surface of color filter array 106 is flushed with the top surface of compound grid, but those skilled in the art manage
Solution, the present invention is not limited thereto.The upper surface of color filter array 106 can be higher than, the top surface less than or equal to compound grid, and
And the surface planarisation of color filter array 106 can be made using additional step.It can carry out shape using any suitable method
Into color filter array 106.
In fig. 12, it is illustrated the schematic sectional view that the step S308 of Fig. 3 is obtained.As shown in figure 12, in colour filter
The top of array 106 is formed with lenticule 112.Lenticule 112 can be by transparent organic material, inorganic compound material system
Into the materials'use surface tension is patterned and flowed back to obtain convex upper surface.Lenticule 112 can concentrate on picture
The center of plain sensor is slightly displaced from.
In accordance with an embodiment of the present disclosure, a kind of imaging sensor is provided, described image sensor can include：Substrate,
Include first surface and the second surface opposite with first surface；Pixel sensor array is arranged in the substrate；Composite grid
Lattice are arranged in above the first surface of the substrate, and with the pixel sensing corresponded in the pixel sensor array
The opening of device；Wherein described composite grid lattice have dielectric layer, the hard mask layer being arranged in above the dielectric layer and enclose
Around the dielectric layer and the metal layer of the hard mask layer.
According on one side, the dielectric layer can be oxide skin(coating), nitride layer or oxynitride layer at least
It is a kind of.
According on one side, the metal layer can also be covered on the surface of the hard mask layer.
According on one side, the dielectric layer, the shape of the hard mask layer and the metal layer and/or size can be with
It is configured as improving the depth-width ratio of the compound grid.
According on one side, the sum of thickness of the hard mask layer and the dielectric layer can be in 0.5 micron and 1 micron
Between.
According on one side, described image sensor can also include：Color filter array is arranged in the compound grid
Corresponding opening in.
According on one side, described image sensor can also include：Lenticule has convex upper surface and substantially flat
Lower surface, the upper surface of the lower surface and the colour filter abuts.
According on one side, described image sensor can also include：At the second surface of the substrate or top
Back-end process BEOL metallization stack parts.
According on one side, described image sensor can also include：Deep trench isolation DTI structures, are arranged on the picture
The substrate is extended between adjacent element sensor in plain sensor array and at the first surface of the substrate
Interior position.
According on one side, described image sensor can also include positioned at the substrate first surface with it is described compound
Anti-reflecting layer between grid.
According on one side, the hard mask layer can be made of lighttight material.
According on one side, the lighttight material can be titanium nitride TiN.
According on one side, the anti-reflecting layer can be SiN layer, TaO layers of tantalum oxide or silicon oxynitride SiON
At least one of layer.
In accordance with an embodiment of the present disclosure, a kind of electronic device provided, the electronic device can include any of the above item
The imaging sensor.
In accordance with an embodiment of the present disclosure, a kind of method for manufacturing imaging sensor is provided, the method may include：It carries
For substrate, wherein being formed with pixel sensor array in the substrate；The substrate first surface top formed according to
The dielectric layer and hard mask layer that sequence stacks；To the hard mask layer pattern, corresponded to being formed in the hard mask layer
First opening of the element sensor in the pixel sensor array；By the use of the hard mask layer after patterning as covering
Mould patterns the dielectric layer, is opened with being formed in the dielectric layer corresponding to the second of the described first opening
Mouthful；Then metal layer is formed in the top of the first surface of the substrate；The metal layer is patterned, with described in removal
Metal layer at the bottom of second opening.
It can include directly carrying out the metal layer according on one side, the metal layer is carried out patterned step
Etching, so as to remove metal layer and the guarantor on the surface of the hard mask layer at the bottom of second opening and after patterning
Stay the metal layer on the side wall of the dielectric layer and the hard mask layer after patterning.
According on one side, the method can also include：In first opening that side wall is covered by the metal layer
Color filter array is formed in the described second opening.
According on one side, the method can also include：Being formed in the top of the color filter array has in convex
Surface and the lenticule of the lower surface of substantially flat, wherein the lower surface of the lenticule and the colour filter in the color filter array
The upper surface adjoining of device.
According on one side, forming the dielectric layer that stacks in sequence and hard in the top of the first surface of the substrate
Anti-reflecting layer can be formed before the step of mask layer in the top of the first surface of the substrate.
In accordance with an embodiment of the present disclosure, provide it is a kind of manufacture electronic device method, this method can include the use of as
The method is gone up to manufacture imaging sensor.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other are orientated in different other orientations and operate.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
Preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in practical realization method with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection indirectly of element or other feature, including profit
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrating rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope and spirit of the disclosure.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of imaging sensor, it is characterised in that described image sensor includes：
Substrate, comprising first surface and the second surface opposite with the first surface；
Pixel sensor array is arranged in the substrate；
Compound grid is arranged in above the first surface of the substrate, and with corresponding in the pixel sensor array
Element sensor opening；
Wherein described composite grid lattice have dielectric layer, the hard mask layer being arranged in above the dielectric layer and around described
The metal layer of dielectric layer and the hard mask layer.
2. imaging sensor according to claim 1, it is characterised in that the dielectric layer is oxide skin(coating), nitride layer
Or at least one of oxynitride layer.
3. imaging sensor according to claim 1, it is characterised in that the metal layer is also covered in the hard mask layer
Surface on.
4. imaging sensor according to claim 1, it is characterised in that the dielectric layer, the hard mask layer and described
The shape and/or size of metal layer are configured as improving the depth-width ratio of the compound grid.
5. imaging sensor according to claim 4, it is characterised in that the thickness of the hard mask layer and the dielectric layer
The sum of degree is between 0.5 micron and 1 micron.
6. imaging sensor according to claim 1, it is characterised in that the hard mask layer is made of lighttight material.
7. a kind of electronic device, it is characterised in that the electronic device includes the image as described in any one of claim 1-6
Sensor.
A kind of 8. method for manufacturing imaging sensor, it is characterised in that the method includes：
Substrate is provided, wherein being formed with pixel sensor array in the substrate；
The dielectric layer and hard mask layer stacked in sequence is formed in the top of the first surface of the substrate；
To the hard mask layer pattern, to form the picture corresponded in the pixel sensor array in the hard mask layer
First opening of plain sensor；
By the use of the hard mask layer after patterning as mask, the dielectric layer is patterned, in the dielectric
The second opening for corresponding to the described first opening is formed in layer；
Then metal layer is formed in the top of the first surface of the substrate；
The metal layer is patterned, to remove the metal layer at the bottom of second opening.
9. according to the method described in claim 8, include directly it is characterized in that carrying out patterned step to the metal layer
The metal layer is performed etching, so as to remove the table of the hard mask layer at the bottom of second opening and after patterning
Metal layer on face simultaneously retains the metal layer on the side wall of the dielectric layer after patterning and the hard mask layer.
A kind of 10. method for manufacturing electronic device, it is characterised in that the method includes using the side described in claim 8 to 9
Method manufactures imaging sensor.
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| CN109192742A (en) * | 2018-09-04 | 2019-01-11 | 德淮半导体有限公司 | Back side illumination image sensor and forming method thereof |
| CN109411494A (en) * | 2018-10-11 | 2019-03-01 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN109585485A (en) * | 2018-12-17 | 2019-04-05 | 德淮半导体有限公司 | Semiconductor device and preparation method thereof |
| CN112149489A (en) * | 2019-06-27 | 2020-12-29 | 乐金显示有限公司 | Sensor panel and display device including the same |
| CN112420755A (en) * | 2019-08-20 | 2021-02-26 | 爱思开海力士有限公司 | Image sensor with a plurality of pixels |
| CN112614857A (en) * | 2019-10-04 | 2021-04-06 | 爱思开海力士有限公司 | Image sensing device |
| CN112687707A (en) * | 2019-10-17 | 2021-04-20 | 爱思开海力士有限公司 | Image sensor with a plurality of pixels |
| CN112687707B (en) * | 2019-10-17 | 2024-05-28 | 爱思开海力士有限公司 | Image Sensor |
| CN111045218A (en) * | 2019-12-31 | 2020-04-21 | 上海禾赛光电科技有限公司 | Photosensitive element |
| CN111045218B (en) * | 2019-12-31 | 2022-02-22 | 上海禾赛科技有限公司 | Photosensitive element |
| CN112002717B (en) * | 2020-07-31 | 2023-10-27 | 奥比中光科技集团股份有限公司 | Pixel array structure of image sensor and manufacturing method |
| CN112002717A (en) * | 2020-07-31 | 2020-11-27 | 深圳奥比中光科技有限公司 | Image sensor pixel array structure and manufacturing method |
| WO2022110383A1 (en) * | 2020-11-26 | 2022-06-02 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor substrate and method for manufacturing backside illuminated image sensor |
| CN115132771A (en) * | 2022-09-01 | 2022-09-30 | 合肥晶合集成电路股份有限公司 | Image sensor and manufacturing method thereof |
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