CN108198752A - A kind of method for preparing pattern on substrate - Google Patents
A kind of method for preparing pattern on substrate Download PDFInfo
- Publication number
- CN108198752A CN108198752A CN201711467295.3A CN201711467295A CN108198752A CN 108198752 A CN108198752 A CN 108198752A CN 201711467295 A CN201711467295 A CN 201711467295A CN 108198752 A CN108198752 A CN 108198752A
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- China
- Prior art keywords
- substrate
- pattern
- mask
- mask material
- layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/015—Imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to a kind of methods for preparing pattern on substrate, first prepare substrate layer on a surface of substrate material, and the pattern with concaveconvex structure is prepared on substrate layer；Mask material is filled in the groove of pattern；Substrate layer and substrate material are performed etching；Mask material is removed, the pattern with concaveconvex structure is obtained on substrate material.The method of the present invention is at low cost, does not need to prepare mask layer using energy intensive process such as vapor depositions；Can simply, low energy consumption, expeditiously prepare the larger mask layer of thickness, substantially reduce high-aspect-ratio microwave structure pattern preparation degree of difficulty.
Description
Technical field
The present invention relates to a kind of methods for preparing pattern on substrate more particularly to one kind to prepare micro-nano knot on substrate
The method of structure pattern.
Background technology
Product applications with microwave structure pattern are extensive, particularly in semiconductor applications, optical device, LED
The fields such as device, MEMS device, opto-electronic device, biochip, biosensor have huge application prospect.The prior art
In, prepare the methods of method of microwave structure pattern is including ultraviolet stamping, hot padding, micro-contact printing, electron beam exposure.It is logical
Micro-nano pattern is made frequently with electron beam exposure technique or nano-imprint process, but directly mining height molecular material（PMMA
Or nano impression glue）It is difficult to make the micro-nano pattern of high-aspect-ratio with ICP etched substrates as mask.Generally all first serving as a contrast
2 ~ 3 layers of different metal layer of bottom surface electron beam evaporation plating are coated with PMMA electron beam exposures or adopt on the metal layer on the metal layer
Micro-nano pattern is made with the method for nano impression, then carving parameter using several groups of suitable RIE gradually etches different metals
Layer, finally obtains substrate etching in micro-nano pattern using the metal layer of substrate most surface as etch mask.With Pontus
The method that Forsberg etc. is mentioned in the paper of " High aspect ratio optical grating in diamond "
For, AL, Si, AL first is deposited in substrate surface, is then coated UV photoresists, after ultraviolet nanometer imprints, is made with UV photoresists
Top layer's aluminium is performed etching for mask, then Si layers are etched using AL as mask layer, then using Si as mask layer to AL layers
Etching finally obtains substrate etching using AL as mask in the micro-nano pattern of high-aspect-ratio.
It is the technique that electron beam exposure and lift-off are combined that another, which makes the commonplace mode of micro-nano pattern,
Being mentioned in method, as Jun Taniguchi exist " Diamond nanoimprint lithography ", first apply on substrate
After electron beam exposure, one layer of metal layer is deposited in cloth PMMA, then wet method removal PMMA and only leave metal mask in substrate surface
Layer, then substrate micro-nano graph is obtained with ICP-RIE etched substrates with this metal mask layer.
However, electron beam exposure method makes micro-nano graph inefficiency, and LIFT-OFF techniques are used, it is difficult to make
Compare thick metal mask, be otherwise difficult to LIFT-OFF successes, thus be difficult to obtain the micro-nano pattern of high-aspect-ratio, such as 10:1
Or a few micrometers of deep micro-nano patterns；Using different metal layer alternately as the method for mask layer, although profundity can be obtained
The micro-nano pattern of wide ratio, but the etching parameters for etching each metal layer are complicated, it is difficult to obtain suitable etch parameter（Difference is covered
The etching selection ratio of film different base）, and the etching interface of each metal layer（Depth or time）It is difficult to control, was susceptible to
Carve or etch the phenomenon that inadequate.And etching parameters are replaced repeatedly and remove etching different substrate materials（Metal layer or diamond）Efficiency is low
Under, it is of high cost.
Invention content
The present invention for complex process in the prior art, it is of high cost, efficiency is low the technical issues of, provide it is a kind of on substrate
The method for preparing pattern.
In order to solve the above-mentioned technical problem, technical scheme is as follows：A kind of method for preparing pattern on substrate,
Include the following steps：
（1）Substrate layer is prepared on a surface of substrate material, the pattern with concaveconvex structure is prepared on substrate layer；
（2）In step（1）Mask material is filled in the groove of middle pattern；
（3）Substrate layer and substrate material are performed etching；
（4）Mask material is removed, the pattern with concaveconvex structure is obtained on substrate material.
Step（1）In, the larger microwave structure pattern of depth of groove can be prepared as needed, and there is profundity to obtain
The microwave structure pattern of wide ratio is prepared.
Further, step（1）In, the method for preparing concaveconvex structure pattern includes any formation concaveconvex structure pattern
Method；Preferably, step（1）In, the preparation method of the pattern on substrate layer includes hot stamping, ultraviolet stamping method, electron beam
It is one or more in exposure method, self-assembly method.
Further, step（2）In the method for filling mask material can be any fill method, it is preferable that step（2）
In, the mode of mask material is filled in a groove including one or more in dipping, coating, powdering, contact printing.In portion
In the filling mode divided, such as coating, contact printing other than filling up mask material in groove, also may be used in convex surfaces
One layer of very thin mask layer can be formed, but this layer of mask thicknesses are only nanometer grade thickness（<50nm）, relative to micro- in groove
The mask layer of meter Hou Du does not influence the etching of substrate material substantially.
Step（2）In, after filling mask material in a groove, further include to the convex surfaces of the pattern of concaveconvex structure into
The step of row cleaning, with the mask material of reduction/removal convex surfaces.Wherein, clean method is chosen as scraping, wipes, is cleaned by ultrasonic
The methods of.
Step（2）In, after filling mask material in a groove, the step of curing to mask material is further included, is made
Be mutually bonded between mask material it is blocking.
Preferably, cured method include heat cure, photocuring, one or more in microwave curing or other
Cured form.
During curing, when mask material is dispersion liquid or slurry, pre-cure step is further included so that in dispersion liquid or slurry
Solvent volatilization, mask material aggregation it is blocking.
The optional curing embodiment of one kind as the present invention, is cured using microwave heating, passes through the side of microwave heating
Formula so that metal powder sintered.
The optional curing embodiment of another kind as the present invention uses energy beam so that mask material is sintered,
The energy beam can be superlaser, beam-plasma etc..
Further, after the curing step, cleaning is further included, removes uncured mask material and bump maps
The mask material of case convex surfaces.
Further, step（2）In, the mask material includes metal material, inorganic non-metallic material, high molecular material
Dispersion liquid, one or more in slurry and powder.
Further, the substrate material includes one or more in metal, inorganic non-metallic, high molecular material.
Preferably, the substrate material is included in diamond, silicon carbide, monocrystalline silicon, polysilicon, gallium nitride, silicon carbide, nickel
It is one or more.
Step（4）In, it can directly select after suitable etchant base material, continue etched substrate material；Or
It removes base material and then performs etching substrate material.
A kind of substrate product, an at least surface for the substrate product have the figure made by method as described above
Case.
Compared with prior art, beneficial effects of the present invention are as follows：
（1）It is at low cost, it does not need to prepare mask layer using energy intensive process such as vapor depositions；
（2）Can simply, low energy consumption, expeditiously prepare the larger mask layer of thickness, substantially reduce the micro-nano knot of high-aspect-ratio
Degree of difficulty prepared by structure pattern.
Description of the drawings
Fig. 1 is nanoimprinting process schematic diagram in the embodiment of the present invention 1.
Fig. 2 is concave-convex microwave structure pattern structure diagram on substrate layer in the embodiment of the present invention 1.
Fig. 3 is step in the embodiment of the present invention 1（3）Structure diagram after middle mask material curing.
Fig. 4 is step in the embodiment of the present invention 1（4）Middle reactive ion etching process schematic.
Fig. 5 is the structure diagram of the substrate product with micro-nano relief pattern in the embodiment of the present invention 1.
Specific embodiment
Come that the present invention will be described in detail below with reference to attached drawing and in conjunction with the embodiments.
Embodiment 1
In the present embodiment, for the substrate material used for diamond, base material is ultraviolet cured adhesive（C-COATING,C2）, template is
H-HDMS templates, mask material are the alcohol dispersion liquid of nano-silver powder, and the granularity of silver powder is 20 nanometers.
In the present embodiment, the method for making microwave structure pattern, includes the following steps on substrate material：
（1）A substrate layer is covered in substrate material surface, the micro- of concaveconvex structure is made on substrate layer using nano-imprinting method
Nano graph cures base material using ultraviolet light（See Fig. 1）；
（2）As shown in Fig. 2, demoulding, it will be in pattern transfer to base material；
（3）Diamond etch mask material is filled in micro-nano groove, by the way of brushing, by nano silver dispersion brushing
Into the groove of base material, in vacuum drying oven at 100 DEG C prebake conditions, be sintered at 150 DEG C, obtain mask layer（See Fig. 3）；
（4）Appropriate etching parameters is selected to perform etching base material, then diamond is carried out using reactive ion etching equipment
Etching（See Fig. 4）, oxygen rie is mainly used herein.For pure organic curing glue-line, the speed that etches under an oxygen atmosphere
Rate is very fast, and the etching of diamond will not be impacted.
（5）Using salpeter solution, remaining silver-colored mask is removed, obtains the product with micro-nano relief pattern（See Fig. 5）.
The content that above-described embodiment illustrates should be understood to that these embodiments are only used for being illustrated more clearly that the present invention, without
For limiting the scope of the invention, after the present invention has been read, those skilled in the art are to the various equivalent forms of the present invention
Modification each fall within the application range as defined in the appended claims.
Claims (10)
- A kind of 1. method for preparing pattern on substrate, which is characterized in that include the following steps：（1）Substrate layer is prepared on a surface of substrate material, the pattern with concaveconvex structure is prepared on substrate layer；（2）In step（1）Mask material is filled in the groove of middle pattern；（3）Substrate layer and substrate material are performed etching；（4）Mask material is removed, the pattern with concaveconvex structure is obtained on substrate material.
- 2. according to the method described in claim 1, it is characterized in that, step（1）In, the preparation method packet of the pattern on substrate layer It includes one or more in hot stamping, ultraviolet stamping method, electron beam exposure method, self-assembly method.
- 3. according to the method described in claim 1, it is characterized in that, step（2）In, in a groove fill mask material mode Including impregnating, coating, one or more in powdering, contact printing.
- 4. according to the method described in claim 1, it is characterized in that, step（2）In, after filling mask material in a groove, Further include the step of being cleaned to the convex surfaces of the pattern of concaveconvex structure.
- 5. according to the method described in claim 1, it is characterized in that, step（2）In, after filling mask material in a groove, Further include the step of curing to mask material.
- 6. according to the method described in claim 5, it is characterized in that, cured method includes heat cure, photocuring, microwave curing In it is one or more.
- 7. according to the method described in claim 1, it is characterized in that, step（2）In, the mask material include metal material, It is one or more in inorganic non-metallic material, the dispersion liquid of high molecular material, slurry and powder.
- 8. according to claim 1-7 any one of them methods, which is characterized in that the substrate material includes metal, inorganic non- It is one or more in metal, high molecular material.
- 9. according to claim 1-7 any one of them methods, which is characterized in that the substrate material includes diamond, carbonization It is one or more in silicon, monocrystalline silicon, polysilicon, gallium nitride, silicon carbide, nickel.
- 10. a kind of substrate product, which is characterized in that an at least surface for the substrate product, which has, passes through such as claim 1-9 The pattern that any one of them method makes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711467295.3A CN108198752A (en) | 2017-12-29 | 2017-12-29 | A kind of method for preparing pattern on substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711467295.3A CN108198752A (en) | 2017-12-29 | 2017-12-29 | A kind of method for preparing pattern on substrate |
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| CN108198752A true CN108198752A (en) | 2018-06-22 |
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| CN201711467295.3A Pending CN108198752A (en) | 2017-12-29 | 2017-12-29 | A kind of method for preparing pattern on substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109666917A (en) * | 2018-12-20 | 2019-04-23 | 长沙新材料产业研究院有限公司 | A kind of diamond surface structure and preparation method thereof |
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| US20040104641A1 (en) * | 1999-10-29 | 2004-06-03 | University Of Texas System | Method of separating a template from a substrate during imprint lithography |
| CN101415568A (en) * | 2005-08-12 | 2009-04-22 | 通用汽车环球科技运作公司 | Method of making a fuel cell component using an easily removed mask |
| KR20100025363A (en) * | 2008-08-27 | 2010-03-09 | 재단법인서울대학교산학협력재단 | A method for fabricating a nanopattern, a method for fabricating a mask and a nanoimprint lithography method |
| CN102544264A (en) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
| CN103151436A (en) * | 2013-02-20 | 2013-06-12 | 华中科技大学 | Preparation method of poroid GaN-based photonic crystal LED (Light Emitting Diode) |
| CN103378218A (en) * | 2012-04-16 | 2013-10-30 | 南通同方半导体有限公司 | Method of making patterned substrate for nitride epitaxial growth |
| CN104391435A (en) * | 2014-12-12 | 2015-03-04 | 南通富士通微电子股份有限公司 | Photoresist edge cleaning device and method |
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2017
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Patent Citations (8)
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| US20040104641A1 (en) * | 1999-10-29 | 2004-06-03 | University Of Texas System | Method of separating a template from a substrate during imprint lithography |
| CN1460893A (en) * | 2002-05-23 | 2003-12-10 | Lg.飞利浦Lcd有限公司 | Method for mfg. liquid crystal display device |
| CN101415568A (en) * | 2005-08-12 | 2009-04-22 | 通用汽车环球科技运作公司 | Method of making a fuel cell component using an easily removed mask |
| KR20100025363A (en) * | 2008-08-27 | 2010-03-09 | 재단법인서울대학교산학협력재단 | A method for fabricating a nanopattern, a method for fabricating a mask and a nanoimprint lithography method |
| CN102544264A (en) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
| CN103378218A (en) * | 2012-04-16 | 2013-10-30 | 南通同方半导体有限公司 | Method of making patterned substrate for nitride epitaxial growth |
| CN103151436A (en) * | 2013-02-20 | 2013-06-12 | 华中科技大学 | Preparation method of poroid GaN-based photonic crystal LED (Light Emitting Diode) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109666917A (en) * | 2018-12-20 | 2019-04-23 | 长沙新材料产业研究院有限公司 | A kind of diamond surface structure and preparation method thereof |
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