CN108195442A - TMR liquid level sensors - Google Patents
TMR liquid level sensors Download PDFInfo
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- CN108195442A CN108195442A CN201810070376.8A CN201810070376A CN108195442A CN 108195442 A CN108195442 A CN 108195442A CN 201810070376 A CN201810070376 A CN 201810070376A CN 108195442 A CN108195442 A CN 108195442A
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- 239000007788 liquid Substances 0.000 title claims abstract description 131
- 239000004065 semiconductor Substances 0.000 claims abstract description 211
- 238000010586 diagram Methods 0.000 description 9
- 235000014676 Phragmites communis Nutrition 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
- G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
- G01F23/24—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid
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- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of TMR liquid level sensors.TMR liquid level sensors include N number of location sensitive unit, and N number of location sensitive cell array is set, wherein, N is the positive integer more than or equal to 2；The location sensitive unit includes TMR switches, metal-oxide-semiconductor and resistance；Wherein, resistance series connection in the adjacent location sensitive unit, the grid of the metal-oxide-semiconductor is electrically connected the output terminal of the TMR switches, and the first pole of the metal-oxide-semiconductor is electrically connected the second end of the resistance, and the second pole of the metal-oxide-semiconductor in all location sensitive units is electrically connected.The TMR liquid level sensors have it is small, precision is high, reliability is high and service life is long.
Description
Technical field
The present invention relates to Technology of Precision Measurement fields, and in particular to a kind of TMR liquid level sensors.
Background technology
Tongue tube is a kind of magnet-sensitive switch, also known as reed capsule or magnetic reed switch, is to make two panels with soft magnetic material
Reed endpoint at be overlapped, and be sealed in filled in inert gas (such as nitrogen, helium) or a glass tube of vacuum, two reeds separate
The only about several microns of distance.In no magnetic fields, the endpoint of two panels reed disconnects.When additional magnetic field, two panels reed
Endpoint location nearby generates different polarity, and the reed of two panels opposed polarity will attract each other and be closed.
Tongue tube has many advantages, such as that simple in structure, small, speed is high relative to mechanical switch；Have relative to electronic switch
There is the features such as anti-loading impact capacity is strong, the advantages that functional reliability is high.Therefore, tongue tube is widely used in level gauging
The technical fields such as instrument, gas meter and water meter.
Wherein, tongue tube liquid level gauge is come the liquid level gauge of indicating liquid position using tongue tube break-make.The tongue tube liquid level
With float cooperating during meter application, a permanent magnet is provided in float, and the float swum on liquid level is increased or dropped with liquid level
Low, the corresponding tongue tube of liquid level is connected, and detected by detection circuit by the effect of permanent magnet in float, so as to fulfill liquid level
It measures.
However, there are following defects for tongue tube liquid level gauge：
First, the size of tongue tube liquid level gauge is larger, it is difficult to meet high-precision liquid level and measure occasion；
Second, in tongue tube liquid level gauge be equipped with movable member, movable member in use contact be also easy to produce shake and
Resonance is generated, affects measurement accuracy；
Third, tongue tube liquid level gauge is encapsulated using glass tube, the easily vibrated and punching when transporting, processing and using
It hits and crushes, affect switching characteristic and reduce service life；
Fourth, tongue tube liquid level gauge is limited by the service life of mechanical structure, the reliability used for a long time is poor.
Invention content
The purpose of the present invention is to provide a kind of TMR liquid level sensors, to solve existing for existing tongue tube liquid level gauge
Volume is big, low precision, short poor reliability and service life the problem of.
To achieve the above object, the technical scheme is that a kind of TMR liquid level sensors are provided, including N number of position
Sensing unit, N number of location sensitive cell array setting, wherein, N is the positive integer more than or equal to 2；
The location sensitive unit includes TMR switches, metal-oxide-semiconductor and resistance；Wherein, in the adjacent location sensitive unit
The resistance series connection, the grid of the metal-oxide-semiconductor are electrically connected the output terminal of the TMR switches, the first pole electrical connection of the metal-oxide-semiconductor
The second end of the resistance, the second pole of the metal-oxide-semiconductor in all location sensitive units are electrically connected.
Preferably, the TMR liquid level sensors further include voltage source, and the metal-oxide-semiconductor is p-type metal-oxide-semiconductor, the metal-oxide-semiconductor
Source electrode is the first pole of the metal-oxide-semiconductor, the second pole of the drain electrode of the metal-oxide-semiconductor for the MOS, the second extremely institute of the MOS
The signal output end of TMR liquid level sensors is stated, the first end ground connection of resistance described in the location sensitive unit positioned at head end,
First pole of the metal-oxide-semiconductor in the location sensitive unit of tail end is electrically connected the voltage source.
Preferably, the TMR liquid level sensors further include additional resistance, and the additional resistance is serially connected in the institute positioned at tail end
Rheme is put between the first pole and the voltage source of the metal-oxide-semiconductor in sensing unit.
Preferably, the metal-oxide-semiconductor be p-type metal-oxide-semiconductor, the metal-oxide-semiconductor drain electrode for the metal-oxide-semiconductor the first pole, the MOS
The source electrode of pipe is the second pole of the MOS, and the first end of resistance is with being located at described in the location sensitive unit positioned at head end
The second end of resistance described in the location sensitive unit of tail end is two signal output ends of the TMR liquid level sensors.
Preferably, the metal-oxide-semiconductor be p-type metal-oxide-semiconductor, the metal-oxide-semiconductor drain electrode for the metal-oxide-semiconductor the first pole, the MOS
The source electrode of pipe is the second pole of the MOS, positioned at the first extremely described TMR level sensings of the location sensitive unit of tail end
The signal output end of device；
The TMR liquid level sensors further include current source, the metal-oxide-semiconductor in the location sensitive unit of head end
Source electrode be electrically connected the cathode of the current source, the first termination of the resistance in the location sensitive unit of head end
Ground.
Preferably, the metal-oxide-semiconductor is p-type metal-oxide-semiconductor, and the source electrode of the metal-oxide-semiconductor is the first pole of the metal-oxide-semiconductor, the MOS
Second pole of the drain electrode of pipe for the MOS, positioned at the first extremely described TMR level sensings of the location sensitive unit of tail end
The signal output end of device；
The TMR liquid level sensors further include current source, the metal-oxide-semiconductor in the location sensitive unit of tail end
The second pole be electrically connected the anode of the current source.
Preferably, array is set N number of location sensitive unit in the vertical direction.
Preferably, the TMR switches and the metal-oxide-semiconductor are integrated in same chip.
Wherein, the TMR switches and the metal-oxide-semiconductor are independently set.
The invention has the advantages that：
TMR liquid level sensors provided by the invention are by N number of location sensitive unit, and each location sensitive unit includes TMR
Switch, metal-oxide-semiconductor and resistance；Wherein, the grid of the metal-oxide-semiconductor is electrically connected the output terminal of the TMR switches, the source of the metal-oxide-semiconductor
Pole is electrically connected the current source, and the drain electrode of the metal-oxide-semiconductor is electrically connected the second end of the resistance；The first end of the resistance is electrically connected
The second end of the resistance in the previous location sensitive unit is connect, TMR switches are switched for chip type, and precision is high, volume
It is small, can close-packed arrays, further improve the measurement accuracy of liquid level sensor, and use suitable for various occasions；In transportational process
It is hardly damaged, influence of the environment to switching characteristic is small, and service life is long, and reliability is high.
Description of the drawings
Fig. 1 is the structure diagram of fluid level measuring instrument that the embodiment of the present invention 1 provides；
Fig. 2 a are the structure diagram of TMR liquid level sensors that the embodiment of the present invention 2 provides；
Fig. 2 b are the structure diagram of TMR liquid level sensors that a preferred embodiment of the embodiment of the present invention 2 provides；
Fig. 3 is the structure diagram of TMR liquid level sensors that the embodiment of the present invention 3 provides；
Fig. 4 is the structure diagram of TMR liquid level sensors that the embodiment of the present invention 4 provides；
Fig. 5 is the structure diagram of TMR liquid level sensors that the embodiment of the present invention 5 provides；
Fig. 6 is the structure diagram of TMR liquid level sensors that the embodiment of the present invention 6 provides；
Fig. 7 is the structure diagram of TMR liquid level sensors that the embodiment of the present invention 7 provides；
Fig. 8 is the structure diagram of TMR liquid level sensors that the embodiment of the present invention 8 provides.
Drawing reference numeral：
1- liquid level sensors, 2- amplifying circuits, 3- filter circuits, 4-A/D conversion circuits, 5- microprocessors, 7- communications are single
Member, 8- display units.
Specific embodiment
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
Embodiment 1
The present embodiment provides a kind of fluid level measuring instruments.As shown in Figure 1, fluid level measuring instrument includes liquid level sensor 1, amplification electricity
Road 2, filter circuit 3, A/D conversion circuits 4, microprocessor 5 and power supply (not shown).
Wherein, the signal input part of the signal output end electrical connection amplifying circuit 2 of liquid level sensor 1, is used for liquid level
The detection signal that sensor 1 obtains is amplified, and liquid level sensor 1 uses TMR liquid level sensors.
The signal input part of filter circuit 3 is electrically connected with the signal output end of amplifying circuit 2, is used for amplifying circuit 2
The detection signal of amplification is filtered.
The signal input part of A/D conversion circuits 4 is electrically connected with the signal output end of filter circuit 3, is used for filtered electrical
Detection signal after road 3 is filtered is converted to digital signal.
The signal output end of the signal input part electrical connection A/D conversion circuits 4 of microprocessor 5, is used to be converted according to A/D
The digital signal that circuit 4 obtains obtains liquid level position.
Power supply provides electric energy for fluid level measuring instrument.
In a variant embodiment of the present embodiment, fluid level measuring instrument further includes communication unit 7 and/or display unit 8,
Communication unit 7 and display unit 8 are connect with 5 signal of microprocessor, and communication unit 7 is used between fluid level measuring instrument and master control platform
Communication, display unit 8 is used for the obtained liquid level position of display microprocessor 5.
Embodiment 2
TMR liquid level sensors include N number of location sensitive unit, and array is set N number of location sensitive unit in the vertical direction,
If being alternatively arranged setting in the vertical direction, wherein, N is the positive integer more than or equal to 2.Location sensitive unit includes TMR
Switch, metal-oxide-semiconductor and resistance；Wherein, the resistance series connection in the sensing unit of adjacent position, the grid electrical connection TMR switches of metal-oxide-semiconductor
Output terminal, the second pole of the first pole electric connection resistance of metal-oxide-semiconductor, the second pole of the metal-oxide-semiconductor in all location sensitive units are electrically connected
It is connected together.For sensing the magnetism of float (swimming in liquid level), and output voltage signal, voltage signal controls TMR switches
The break-make of metal-oxide-semiconductor, so as to control the connection relation of resistance.
The structure of TMR liquid level sensors is described in detail in the present embodiment by taking p-type metal-oxide-semiconductor as an example.In the present embodiment, metal-oxide-semiconductor
Source electrode be metal-oxide-semiconductor the first pole, metal-oxide-semiconductor drain electrode for MOS the second pole, the second extremely described TMR liquid level sensors of MOS
Signal output end.
As shown in Figure 2 a, TMR liquid level sensors include N number of location sensitive unit, and first position sensing unit includes one
TMR switchs TRM1, a metal-oxide-semiconductor Q1With a resistance R1, second position sensing unit includes TMR and switchs TRM2, one
Metal-oxide-semiconductor Q2With a resistance R2, and so on, nth position sensing unit includes a TMR and switchs TRMN, a metal-oxide-semiconductor QNWith
One resistance RN.It should be noted that first position sensing unit is defined as head end location sensitive unit, N by the present embodiment
Location sensitive unit is defined as end-position sensing unit.
Metal-oxide-semiconductor Q1Grid electrical connection TMR switch TRM1Signal output end, metal-oxide-semiconductor Q1Source electrode electric connection resistance R1's
Second end, resistance R1First end ground connection, metal-oxide-semiconductor Q1Drain electrode electrical connection node (node connects jointly for the drain electrodes of all metal-oxide-semiconductors
The contact that is electrically connected connect).
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TRM2Signal output end, metal-oxide-semiconductor Q2Source electrode electric connection resistance R2's
Second end, resistance R2First end electric connection resistance R1Second end, metal-oxide-semiconductor Q2Drain electrode electrical connection node.It is it can be appreciated that electric
Hinder R2First end be electrically connected metal-oxide-semiconductor Q simultaneously1Source electrode.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TRMNSignal output end, metal-oxide-semiconductor QNSource electrode electric connection resistance RN's
Second end, while metal-oxide-semiconductor QNSource electrode electrical connection voltage source, resistance RNFirst end electrical connection prior location sensing unit in
Resistance RN-1Second end, metal-oxide-semiconductor QNDrain electrode electrical connection node.It can be appreciated that resistance RNFirst end be electrically connected simultaneously it is previous
Metal-oxide-semiconductor Q in location sensitive unitN-1Source electrode.
Metal-oxide-semiconductor Q1、Q2…QNThe node that connects jointly of drain electrode be TMR liquid level sensors signal output end.
In embodiment, at liquid level, TMR switch output low levels, the TMR switch output high level at other places, resistance
R1、R2…RNResistance value it is identical, voltage source VCCSteady dc voltage is provided.
Liquid level signal corresponds to output voltage：V=n/N × VCC；
The voltage granularity of corresponding liquid level is：VCC/ N is a constant；
Liquid level position is：N=N × V/VCC。
As a preferred embodiment of the present embodiment, as shown in Figure 2 b, in metal-oxide-semiconductor QNSource electrode and voltage source VCCBetween
Connect additional resistance R0, and additional resistance R0Resistance value and R1、R2…RNResistance value it is identical.In the case where supply voltage is identical,
Additional resistance R0It may insure metal-oxide-semiconductor QNCollector voltage be slightly less than TMR switch output voltage, so as to ensure that metal-oxide-semiconductor is normal
Work.
Liquid level signal corresponds to output voltage：V=n/ (N+1) × VCC；
The voltage granularity of corresponding liquid level is：VCC/ (N+1) is a constant；
Liquid level position is：N=(N+1) × V/VCC。
It should be noted that the metal-oxide-semiconductor in location sensitive unit is not limited to, using p-type metal-oxide-semiconductor, N equally may be used
Type metal-oxide-semiconductor, it is only necessary to exchange source electrode and drain electrode.Moreover, at liquid level, TMR switch output high level, the TMR at other places is opened
Close output low level.
Embodiment 3
TMR liquid level sensors include location sensitive unit and current source, and in the sensing unit of position, metal-oxide-semiconductor is p-type MOS
Pipe, and first pole of the drain electrode of metal-oxide-semiconductor for metal-oxide-semiconductor, the source electrode of metal-oxide-semiconductor is the second pole of MOS, positioned at the location sensitive of tail end
The signal output end of the extremely TMR liquid level sensors of the first of unit；The source electrode of metal-oxide-semiconductor in the location sensitive unit of head end
It is electrically connected the cathode of current source, the first end ground connection of the resistance in the location sensitive unit of head end.
Specifically, as shown in figure 3, TMR liquid level sensors include N number of location sensitive unit, first position sensing unit packet
Include a TMR switches TRM1, a metal-oxide-semiconductor Q1With a resistance R1, second position sensing unit includes TMR and switchs TRM2、
One metal-oxide-semiconductor Q2With a resistance R2, and so on, nth position sensing unit includes a TMR and switchs TRMN, a metal-oxide-semiconductor
QNWith a resistance RN.It should be noted that first position sensing unit is defined as head end location sensitive unit by the present embodiment,
Nth position sensing unit is defined as end-position sensing unit.
Metal-oxide-semiconductor Q1Grid electrical connection TMR switch TRM1Signal output end, metal-oxide-semiconductor Q1Drain electrode electric connection resistance R1's
Second end, while the cathode of current source I is electrically connected, metal-oxide-semiconductor Q1Source electrode electrical connection node (node be all metal-oxide-semiconductors source electrode
The contact that is electrically connected connected jointly), the negative electricity connecting node of current source I, resistance R1First end ground connection.
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TRM2Signal output end, metal-oxide-semiconductor Q2Drain electrode electric connection resistance R2's
Second end, resistance R2First end electric connection resistance R1Second end, metal-oxide-semiconductor Q2Source electrode electrical connection node, current source I is just
Pole.It can be appreciated that resistance R2First end be electrically connected metal-oxide-semiconductor Q simultaneously1Drain electrode.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TRMNSignal output end, metal-oxide-semiconductor QNDrain electrode electric connection resistance RN's
Second end, while as the signal output end V of TMR liquid level sensors, resistance RNFirst end electrical connection prior location sensing it is single
Resistance R in memberN-1Second end, metal-oxide-semiconductor QNSource electrode electrical connection node and current source I cathode.It can be appreciated that resistance RN's
First end is electrically connected metal-oxide-semiconductor Q simultaneouslyN-1Drain electrode.
At liquid level, TMR switch output high level, the TMR switch output low levels at other places, resistance R1、R2…RNResistance
It is worth identical, voltage source VCCFor stable DC voltage, I is current source.
Liquid level signal corresponds to output voltage：V=I × (n × R)；
The voltage signal of adjacent position is： For constant；
Corresponding position is：N=V/ (I × R)；
The voltage signal V of liquid level sensor output is sampled by AD, n values can be extrapolated, therefore accordingly understand liquid level position.
It should be noted that the metal-oxide-semiconductor in location sensitive unit is not limited to, using p-type metal-oxide-semiconductor, N equally may be used
Type metal-oxide-semiconductor, it is only necessary to exchange source electrode and drain electrode.Moreover, at liquid level, TMR switch output high level, the TMR at other places is opened
Close output low level.
Embodiment 4
TMR liquid level sensors include location sensitive unit and current source, and in the sensing unit of position, metal-oxide-semiconductor is p-type MOS
Pipe, and the first pole that the source electrode of metal-oxide-semiconductor is metal-oxide-semiconductor, the drain electrode of metal-oxide-semiconductor is the second pole of MOS, positioned at the location sensitive of tail end
The signal output end of the extremely TMR liquid level sensors of the first of unit, second of metal-oxide-semiconductor in the location sensitive unit of tail end
Pole is electrically connected the anode of current source, the cathode ground connection of current source.
Specifically, as shown in figure 4, TMR liquid level sensors include N number of location sensitive unit and voltage source VCC, first position
Sensing unit includes a TMR and switchs TRM1, a metal-oxide-semiconductor Q1With a resistance R1, second position sensing unit is including one
TMR switchs TRM2, a metal-oxide-semiconductor Q2With a resistance R2, and so on, nth position sensing unit includes a TMR and switchs
TRMN, a metal-oxide-semiconductor QNWith a resistance RN.It should be noted that first position sensing unit is defined as head end by the present embodiment
Location sensitive unit, nth position sensing unit are defined as end-position sensing unit.
Metal-oxide-semiconductor Q1Grid electrical connection TMR switch TRM1Signal output end, metal-oxide-semiconductor Q1Source electrode electric connection resistance R1's
Second end, metal-oxide-semiconductor Q1Drain electrode electrical connection node (source electrode the be electrically connected contact that jointly connects of the node for all metal-oxide-semiconductors) and electric current
The anode of source I.Resistance R in the sensing unit of first position1First end electrical connection voltage source VCC。
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TRM2Signal output end, metal-oxide-semiconductor Q2Source electrode electric connection resistance R2's
Second end, resistance R2First end electric connection resistance R1Second end, metal-oxide-semiconductor Q2Drain electrode electrical connection node and current source I just
Pole.It can be appreciated that resistance R2First end be electrically connected metal-oxide-semiconductor Q simultaneously1Source electrode.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TRMNSignal output end, metal-oxide-semiconductor QNSource electrode electric connection resistance RN's
Second end, while as the signal output end V of TMR liquid level sensors, resistance RNFirst end electrical connection prior location sensing it is single
Resistance R in memberN-1Second end, metal-oxide-semiconductor QNDrain electrode electrical connection node and current source I anode.It can be appreciated that resistance RN's
First end is electrically connected metal-oxide-semiconductor Q simultaneouslyN-1Source electrode.
In example 4, at liquid level, TMR switch output low levels, the TMR switch output high level at other places, resistance
R1、R2…RNResistance value it is identical, voltage source VCCFor stable DC voltage.
Liquid level signal corresponds to output voltage：V=VCC-I×(N×R)；
The voltage signal of adjacent position is： For constant；
Corresponding position is：N=(VCC-V)/(I×R)
The present embodiment is powered by current source for location sensitive unit, resistance pressure.Liquid level sensor is sampled by AD to export
Voltage signal V, can extrapolate n values, therefore accordingly understand liquid level position.
It should be noted that in the present embodiment, the metal-oxide-semiconductor in location sensitive unit is not limited to using p-type metal-oxide-semiconductor,
N-type metal-oxide-semiconductor equally may be used, it is only necessary to exchange source electrode and drain electrode.Moreover, at liquid level, TMR switch output high level,
The TMR switch output low levels at other places.
In addition, the TMR liquid level sensors that embodiment 1 to embodiment 4 provides set N number of location sensitive unit, each position
Sensing unit includes TMR switches, metal-oxide-semiconductor and resistance, and the conducting of TMR switch drives metal-oxide-semiconductor, TMR switches are switched for chip type, by electricity
Stream source or voltage source are powered for location sensitive unit, resistance pressure.Therefore, which has the following advantages：
First, simple in structure, at low cost, precision is high, and reliability is high；
Second, the electric current of location sensitive cell array consumption is constant, low in energy consumption；
Third, the tissue of resistance R is identical, and apolegamy is simple, and PCB compositions and cabling are simple, and failure rate is low；
4th, location sensitive cell array is hardly damaged, long lifespan without movable member during transport and use；
5th, when liquid level sensor re-powers, without re-calibration, it can position rapidly, quickly track liquid level；
6th, strong antijamming capability easily eliminates interference, is used suitable for a variety of occasions.
7th, when there are the influences that modulation electric current during larger electromagnetic interference, can be taken to eliminate interference in environment.
As a preferred embodiment of embodiment 1-4, TMR switches are switched using integrated form chip TMR, can also be used
Separate type chip TMR is switched.In addition, TMR switches and metal-oxide-semiconductor can independently be set, i.e., it is separately positioned, but preferably by TMR
Switch and metal-oxide-semiconductor are integrated in same chip, to further reduce the volume of location sensitive unit, are passed so as to reduce TMR liquid levels
The volume of sensor.
As another preferred embodiment of embodiment 1-4, N number of location sensitive cellular array setting, and vertical
Spaced array is set on direction.It is highly preferred that spaced array is set the TMR switches in N number of location sensitive unit on the same line
It puts.The arrangement that TMR is switched can be made closer in this way, so as to improve the measurement accuracy of TMR liquid level sensors.
Embodiment 5
The present embodiment provides a kind of divider resistance formula liquid level sensors.As shown in figure 5, divider resistance is liquid level sensor packet
Include N number of location sensitive unit and all-in resistance R0, N number of location sensitive cell array setting, wherein, N is just whole more than or equal to 2
Number.
Location sensitive unit includes TMR switches, N-type metal-oxide-semiconductor and resistance；Wherein, the grid electrical connection TMR switches of metal-oxide-semiconductor
Output terminal, metal-oxide-semiconductor source electrode ground connection, the second end of the drain electrode electric connection resistance of metal-oxide-semiconductor；The first end of resistance is felt as position
Answer the signal output end V of unit.
Specifically, metal-oxide-semiconductor Q1Grid electrical connection TMR switch TMR1Output terminal, metal-oxide-semiconductor Q1Source electrode ground connection, metal-oxide-semiconductor
Q1Drain electrode electric connection resistance R1Second end, resistance R1Signal output end V of the first end as location sensitive unit, resistance
R1First end simultaneously with all-in resistance R0Second end electrical connection, all-in resistance R0First end electrical connection voltage source VCC。
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TMR2Output terminal, metal-oxide-semiconductor Q2Source electrode ground connection, metal-oxide-semiconductor Q2Drain electrode
Electric connection resistance R2Second end, resistance R2Signal output end V, resistance R of the first end as location sensitive unit2First
End simultaneously with all-in resistance R0Second end electrical connection.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TMRNOutput terminal, metal-oxide-semiconductor QNSource electrode ground connection, metal-oxide-semiconductor QNDrain electrode
Electric connection resistance RNSecond end pole, resistance RNSignal output end V, resistance R of the first end as location sensitive unitN
One end simultaneously with all-in resistance R0Second end electrical connection.
Positioned at metal-oxide-semiconductor Q2With metal-oxide-semiconductor QNBetween other metal-oxide-semiconductors and metal-oxide-semiconductor Q2Connection mode it is identical, it is no longer superfluous herein
It states.
In the present embodiment, the resistance value of each position sensing unit can be different, is determined by intrinsic standoff ratio, at liquid level
TMR, which is switched, exports high level 1, the TMR switch output low levels 0 at other positions.
Liquid level signal corresponds to output voltage：V=RN/(RN+R0)×VCC；
Corresponding position is：RN/R0=VCC/(VCC-V)；
The present embodiment samples the voltage signal V of liquid level sensor output by AD, can extrapolate n values, therefore accordingly understand
Liquid level position.
Embodiment 6
The present embodiment provides a kind of divider resistance formula liquid level sensors.As shown in fig. 6, divider resistance is liquid level sensor packet
Include N number of location sensitive unit and all-in resistance R0, N number of location sensitive cell array setting, wherein, N is just whole more than or equal to 2
Number.
Location sensitive unit includes TMR switches, p-type metal-oxide-semiconductor and resistance；Wherein, the grid electrical connection TMR switches of metal-oxide-semiconductor
Output terminal, metal-oxide-semiconductor source electrode electrical connection VCC, the second end of the drain electrode electric connection resistance of metal-oxide-semiconductor；The first end of resistance is as position
Put the signal output end V of sensing unit.
Specifically, metal-oxide-semiconductor Q1Grid electrical connection TMR switch TMR1Output terminal, metal-oxide-semiconductor Q1Source electrode electrical connection VCC,
Metal-oxide-semiconductor Q1Drain electrode electric connection resistance R1Second end, resistance R1Signal output end V of the first end as location sensitive unit,
Resistance R1First end simultaneously with all-in resistance R0Second end electrical connection, all-in resistance R0First end ground connection.
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TMR2Output terminal, metal-oxide-semiconductor Q2Source electrode electrical connection VCC, metal-oxide-semiconductor Q2's
The electric connection resistance that drains R2Second end, resistance R2Signal output end V, resistance R of the first end as location sensitive unit2's
First end simultaneously with all-in resistance R0Second end electrical connection, all-in resistance R0First end ground connection.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TMRNOutput terminal, metal-oxide-semiconductor QNSource electrode electrical connection VCC, metal-oxide-semiconductor QN's
The electric connection resistance that drains RNSecond end, resistance RNSignal output end V, resistance R of the first end as location sensitive unitN's
First end simultaneously with all-in resistance R0Second end electrical connection, all-in resistance R0First end ground connection.
Positioned at metal-oxide-semiconductor Q2With metal-oxide-semiconductor QNBetween other metal-oxide-semiconductors and metal-oxide-semiconductor Q2Connection mode it is identical, it is no longer superfluous herein
It states.
In the present embodiment, the resistance value of each position sensing unit can be different, is determined by intrinsic standoff ratio, at liquid level
TMR, which is switched, exports low level 0, the TMR switch output high level 1 at other positions.
Liquid level signal corresponds to output voltage：V=R0/(RN+R0)×VCC；
Corresponding position is：RN/R0=(VCC-V)/V；
The present embodiment samples the voltage signal V of liquid level sensor output by AD, can extrapolate n values, therefore accordingly understand
Liquid level position.
The resolution ratio of TMR liquid level sensors that embodiment 5 and embodiment 6 provide is by resistance precision, metal-oxide-semiconductor noise, power supply
Noise and external electromagnetic interference limitation, it is difficult to accomplish more than kilobit, and AD device costs are higher when more than kilobit.In addition, by
In resistance R1、R2…RNIt is different, the complexity of circuit is increased, while increase spare parts cost；The electricity that each sensor generates
Signal magnitude increases the complexity of signal processing it is difficult to ensure that resolution ratio is consistent.Therefore, embodiment 5 and embodiment 6 provide
TMR liquid level sensors are only applicable to the relatively low situation of resolution ratio.
Embodiment 7
The present embodiment provides a kind of mobile resistance string pattern liquid level sensors.The pattern is characterized in that resistance string is similar to
Potentiometer, pressure sensor location is motionless, and tap changes the total resistance value of potentiometer.As shown in fig. 7, divider resistance, which is liquid level sensor, includes N
A location sensitive unit, N number of location sensitive cell array setting, wherein, N is the positive integer more than or equal to 2.
Location sensitive unit includes TMR switches, N-type metal-oxide-semiconductor and resistance；Wherein, the grid electrical connection TMR switches of metal-oxide-semiconductor
Output terminal, metal-oxide-semiconductor source electrode ground connection, the second end of the drain electrode electric connection resistance of metal-oxide-semiconductor；The first end electrical connection voltage of resistance
Source VCC。
Specifically, metal-oxide-semiconductor Q1Grid electrical connection TMR switch TMR1Output terminal, metal-oxide-semiconductor Q1Source electrode ground connection, metal-oxide-semiconductor
Q1Drain electrode electric connection resistance R1Second end, and as the signal output end V of location sensitive unit, resistance R1First end electricity
Connect voltage source VCC。
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TMR2Output terminal, metal-oxide-semiconductor Q2Source electrode ground connection, metal-oxide-semiconductor Q2Drain electrode
Electric connection resistance R2Second end, resistance R2First end electrical connection prior location sensing unit in resistance second end, i.e. resistance
R2First end electric connection resistance R1 second end.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TMRNOutput terminal, metal-oxide-semiconductor QNSource electrode ground connection, metal-oxide-semiconductor QNDrain electrode
Electric connection resistance RNSecond end, resistance RNFirst end electrical connection prior location sensing unit in resistance RN-1Second end.
Positioned at metal-oxide-semiconductor Q2With metal-oxide-semiconductor QNBetween other metal-oxide-semiconductors and metal-oxide-semiconductor Q2Connection mode it is identical, it is no longer superfluous herein
It states.
In the present embodiment, TMR is switched and is exported high level 1 at liquid level, the TMR switch output low levels 0 at other positions.
Resistance R1、R2…RNResistance value it is identical, VCCStable DC voltage is provided,
Liquid level signal corresponds to output voltage：V=(1-1/n) × VCC；
Adjacent position voltage difference is：
Corresponding position is：N=(VCC-V)/V；
The present embodiment samples the voltage signal V of liquid level sensor output by AD, can extrapolate n values, therefore accordingly understand
Liquid level position.
Embodiment 8
The present embodiment provides a kind of mobile resistance string pattern liquid level sensors.The pattern is characterized in that resistance string is similar to
Potentiometer, pressure sensor location is motionless, and tap changes the total resistance value of potentiometer.As shown in figure 8, divider resistance, which is liquid level sensor, includes N
A location sensitive unit, N number of location sensitive cell array setting, wherein, N is the positive integer more than or equal to 2.
Location sensitive unit includes TMR switches, p-type metal-oxide-semiconductor and resistance；Wherein, the grid electrical connection TMR switches of metal-oxide-semiconductor
Output terminal, the source electrode electrical connection voltage source V of metal-oxide-semiconductorCC, the second end of the drain electrode electric connection resistance of metal-oxide-semiconductor；The first end of resistance
Ground connection.
Specifically, metal-oxide-semiconductor Q1Grid electrical connection TMR switch TMR1Output terminal, metal-oxide-semiconductor Q1Source electrode electrical connection voltage
Source VCC, metal-oxide-semiconductor Q1Drain electrode electric connection resistance R1Second end, and as the signal output end V of location sensitive unit, resistance R1
First end ground connection.
Metal-oxide-semiconductor Q2Grid electrical connection TMR switch TMR2Output terminal, metal-oxide-semiconductor Q2Source electrode electrical connection voltage source VCC, MOS
Pipe Q2Drain electrode electric connection resistance R2Second end, resistance R2First end electrical connection prior location sensing unit in resistance
Second end, i.e. electric connection resistance R2Second end.
Metal-oxide-semiconductor QNGrid electrical connection TMR switch TMRNOutput terminal, metal-oxide-semiconductor QNSource electrode electrical connection voltage source VCC, MOS
Pipe QNDrain electrode electric connection resistance RNSecond end, resistance RNFirst end electrical connection prior location sensing unit in resistance RN-1
Second end.
Positioned at metal-oxide-semiconductor Q2With metal-oxide-semiconductor QNBetween other metal-oxide-semiconductors and metal-oxide-semiconductor Q2Connection mode it is identical, it is no longer superfluous herein
It states.
In the present embodiment, TMR is switched and is exported low level 0 at liquid level, the TMR switch output high level 1 at other positions.
Resistance R1、R2…RNResistance value it is identical, VCCStable DC voltage is provided,
Liquid level signal corresponds to output voltage：V=VCC/n；
Adjacent position voltage difference is：
Corresponding position is：N=VCC/V；
The present embodiment samples the voltage signal V of liquid level sensor output by AD, can extrapolate n values, therefore accordingly understand
Liquid level position.
It is TMR liquid level sensors low cost that embodiment 5 and embodiment 8 provide, low-power consumption, simple in structure；Resistance phase
Together, apolegamy is simple, and PCB compositions are simple；Cabling is simple, and failure rate is low；Array is without movable member, long-life；New power on need not weight
New calibration, can position rapidly；Liquid level can quickly be tracked.However, the TMR liquid level sensors have the disadvantage that：
Resolution ratio is limited by resistance precision, NMOS tube noise, power supply noise and external electromagnetic interference, it is difficult to accomplish kilobit
More than, and AD device costs are higher when more than kilobit；
Because the granularity of the electric signal of corresponding position is related to physical location, the granularity of different location is different, with position
Put square point one correspond to, when practical application, accomplishes that hundred need 14 precision of AD, and cost is excessively high, is easily disturbed, actually
Application value is not high.
Because all-in resistance is changing, thus somewhere position when power consumption may be higher, low-power consumption is relatively difficult to guarantee.
Although above having used general explanation and specific embodiment, the present invention is described in detail, at this
On the basis of invention, it can be made some modifications or improvements, this will be apparent to those skilled in the art.Therefore,
These modifications or improvements without departing from theon the basis of the spirit of the present invention belong to the scope of protection of present invention.
Claims (9)
1. a kind of TMR liquid level sensors, which is characterized in that the TMR liquid level sensors include N number of location sensitive unit, N number of institute
Rheme puts the setting of sensing unit array, wherein, N is the positive integer more than or equal to 2；
The location sensitive unit includes TMR switches, metal-oxide-semiconductor and resistance；Wherein, it is described in the adjacent location sensitive unit
Resistance is connected, the output terminal of the grid electrical connection TMR switches of the metal-oxide-semiconductor, described in the first pole electrical connection of the metal-oxide-semiconductor
The second end of resistance, the second pole of the metal-oxide-semiconductor in all location sensitive units are electrically connected.
2. TMR liquid level sensors according to claim 1, which is characterized in that the TMR liquid level sensors further include voltage
Source, the metal-oxide-semiconductor are p-type metal-oxide-semiconductor, and the source electrode of the metal-oxide-semiconductor is the first pole of the metal-oxide-semiconductor, and the drain electrode of the metal-oxide-semiconductor is institute
State the second pole of MOS, the signal output end of the second extremely described TMR liquid level sensors of the MOS, positioned at institute's rheme of head end
Put the first end ground connection of resistance described in sensing unit, the of the metal-oxide-semiconductor in the location sensitive unit of tail end
One pole is electrically connected the voltage source.
3. TMR liquid level sensors according to claim 2, which is characterized in that the TMR liquid level sensors further include additional
Resistance, the additional resistance be serially connected in the first pole of the metal-oxide-semiconductor in the location sensitive unit of tail end with it is described
Between voltage source.
4. TMR liquid level sensors according to claim 1, which is characterized in that the metal-oxide-semiconductor be p-type metal-oxide-semiconductor, the MOS
First pole of the drain electrode of pipe for the metal-oxide-semiconductor, the source electrode of the metal-oxide-semiconductor is the second pole of the MOS, positioned at institute's rheme of head end
The first end for putting resistance described in sensing unit and the second end for being located at resistance described in the location sensitive unit of tail end are
Two signal output ends of the TMR liquid level sensors.
5. TMR liquid level sensors according to claim 1, which is characterized in that the metal-oxide-semiconductor be p-type metal-oxide-semiconductor, the MOS
First pole of the drain electrode of pipe for the metal-oxide-semiconductor, the source electrode of the metal-oxide-semiconductor is the second pole of the MOS, positioned at institute's rheme of tail end
Put the signal output end of the first extremely described TMR liquid level sensors of sensing unit；
The TMR liquid level sensors further include current source, the source of the metal-oxide-semiconductor in the location sensitive unit of head end
Pole is electrically connected the cathode of the current source, the first end ground connection of the resistance in the location sensitive unit of head end.
6. TMR liquid level sensors according to claim 1, which is characterized in that the metal-oxide-semiconductor be p-type metal-oxide-semiconductor, the MOS
The source electrode of pipe is the first pole of the metal-oxide-semiconductor, and the drain electrode of the metal-oxide-semiconductor is the second pole of the MOS, positioned at institute's rheme of tail end
Put the signal output end of the first extremely described TMR liquid level sensors of sensing unit；
The TMR liquid level sensors further include current source, and of the metal-oxide-semiconductor in the location sensitive unit of tail end
Two poles are electrically connected the anode of the current source.
7. according to the TMR liquid level sensors described in claim 1-6 any one, which is characterized in that N number of location sensitive list
Array is set member in the vertical direction.
8. according to the TMR liquid level sensors described in claim 1-6 any one, which is characterized in that TMR switch and described
Metal-oxide-semiconductor is integrated in same chip.
9. according to the TMR liquid level sensors described in claim 1-6 any one, which is characterized in that TMR switch and described
Metal-oxide-semiconductor is independently set.
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| CN111412963A (en) * | 2020-02-25 | 2020-07-14 | 广州奥格智能科技有限公司 | Three-wire series electronic water gauge circuit |
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| CN112763026A (en) * | 2019-10-21 | 2021-05-07 | 中国石油化工股份有限公司 | Electronic liquid level meter |
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