CN108183144A - 一种提高碲化镉薄膜太阳电池测试准确性的激光刻划技术 - Google Patents
一种提高碲化镉薄膜太阳电池测试准确性的激光刻划技术 Download PDFInfo
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Abstract
本发明为一种提高碲化镉薄膜太阳电池测试准确性的激光刻划技术，公开了一种精准定义碲化镉薄膜太阳电池面积的方法，属于化合物半导体薄膜太阳电池的结构设计技术领域。通过用脉冲Nd:YAG激光对具有完整器件结构的CdTe薄膜太阳电池进行激光刻划，可消除金属电极边缘残余吸收层材料CdTe的存在引起入射光的横向收集导致电流虚高，同时刻消除边缘残余碲化镉对器件串联电阻并联电阻造成的影响，从而提供一种经济可行的精准定义碲化镉薄膜太阳电池面积从而得到更为可信的电池效率曲线之方法。
Description
技术领域
本发明属于化合物半导体薄膜太阳电池的结构设计技术领域。
背景技术
CdTe是一种直接带隙半导体，禁带宽度1.45eV，非常接近太阳电池所需的最优禁带宽度。CdTe对可见光的吸收很强，吸收系数高达~105cm-1，对光能量高于CdTe禁带宽度的太阳光而言，1μm厚的CdTe即可对99%的光进行有效吸收，是非常适合用作太阳电池吸收层材料的。自1963年Cusano报道第一例光电转换效率7%的n-CdTe/p-Cu2-xTe异质结薄膜太阳电池以来，CdTe材料便受到学者关注并发展出p-CdTe/n-CdS异质结电池且沿用发展至今。目前小面积CdTe薄膜太阳电池的最高转换效率已达22.1%，已成为太阳能电池领域的重点研究对象之一。虽然CdTe薄膜太阳电池转换效率已超过20%，但是与其理论转换效率之间仍有较大差异，一些能量损失的内在物理机制尚不明确。因此对CdTe太阳电池及组件内在物理机制的研究十分必要。精准定义单元电池的面积同时不引入其他可能影响电池效率的损害是深入研究所有影响电池效率进一步优化内在物理机制的基本前提。开发出一种便捷可重复的小面积电池制备工艺尤为重要。然而尚未有人进行相关工艺的详细报道。
发明内容
我们提出用脉冲Nd:YAG激光（波长532nm）对已形成完整电池结构的器件/组件进行小面积化制备。该方法不仅适用于(1)已用掩膜版定义过器件面积却因电极附近吸收层残余引入横向收集导致电流密度虚高的电池，而且适用于(2)未封装保护电池局部电极损伤造成的效率失真电池。此外，该技术也适用于(3)将大面积电池刻划成需严格定义面积的单元小电池。
上述(1)的技术路线是按照标准CdTe太阳电池制备流程依次在均匀涂覆有SnO2:F透明导电薄膜的衬底上沉积窗口层/缓冲层、吸收层、背接触层并对各膜层进行对应的后处理，最后用掩膜技术在期望行程完整电池结构的区域用真空蒸发法镀上金电极。此种制备方法制备的电池周围完全被其它层覆盖，传统分离单个小面积单元电池的方法是在金电极上涂覆黑胶，待黑胶固化后将周围背接触层及以下的吸光层用溴甲醇清洗干净，最后用甲苯溶液将黑胶洗去即可得到基本接近背电极面积的单元电池。然而在实际测试过程中，由于涂覆黑胶暂时没有行之有效的方法精准覆盖电极部分，背电极周围1mm左右的范围皆有CdTe层残余，这是造成CdTe太阳电池效率测试不准确的主要原因之一，残余的吸收层在测试过程中会吸收太阳光，贡献光生载流子，使测试结果中短路电流密度虚高。
上述(2)情形下，实验室或工厂制备的完整电池在未封装情况下保存或测试过程中，通畅会引入电极损伤，尤其是在电池边缘，从而影响电池的光伏性能。尤其是在进行环境耐候性测试的过程中，此类损伤会造成对电池器件稳定性的误判。
上述(3)情况一般是工厂对生产线上批量生产的电池组件进行精细分析表征时须面对的问题。许多有关太阳电池器件物理、载流子输运等基础表征手段可接受的单元电池面积往往在1cm2及以下，因此如何在将大面积电池分割成小电池、精准定义其面积的同时不引入其他物理或化学损伤在探寻进一步优化电池性能方面意义重大。
本发明公开了一种用532激光对完整器件结构的CdTe薄膜太阳电池进行重新精准定义面积的离焦刻划方法。具体地，用Nd:YAG脉冲激光作为光源，通过调节扩束镜位置、光阑孔径、激光出射口与工作台之间距离、调整重复频率及功率因子等方式对打在电池器件上的功率进行调节，确认了在不伤及透明导电膜层的条件下将其他功能膜层全部去除的工艺参数和工作条件。
附图说明
图1单元电池制备及激光刻划流程，其中1透明导电氧化物，2缓冲层及窗口层，3碲化镉吸收层，4背接触层，5掩膜片，6金属背电极，121金属背电极制备过程，122传统涂覆黑胶制备单元电池工艺，123激光刻划工艺。
图2是激光刻划工艺。
图3是使用脉冲激光刻划的电池LBIC图。
图4是激光刻划处理前后电池的I-V曲线及特性参数。
具体实施方式
实施方式参见图1图2，图1的121,122步骤是传统是小面积CdTe薄膜太阳电池的制备工艺，亦即用掩膜版沉积了金属背电极之后，先将背电极部分用黑胶小心完全涂覆遮盖，黑胶固化后用溴甲醇溶液洗去电极之外的其他功能层，最后将黑胶除去。123指的是在121和122的基础上，用激光刻划定义一个较掩膜法更小更精确的电池面积。在原来形成的金电极边缘向内刻划1到2mm，此条件下刻划得到的单元电池断口整齐，无残余吸收层干扰，此外，如图2所示，整个刻划系统及刻画工艺经由计算机精确控制，刻划模式、图形、激光功率因子等参数都可按需调节，可重复性高，面积准确。
Claims (5)
1.本专利的特征是利用Nd:YAG脉冲激光分隔小面积碲化镉薄膜太阳电池，这是一种精准定义单元电池面积的新技术，包括：
利用脉冲激光对完整结构的CdTe薄膜太阳电池进行分隔；
利用脉冲激光刻划分隔CdTe薄膜太阳电池成为具有可精确定义的小面积电池之技术细节。
2.如权利要求1所述，其特征是对具有完整器件结构的CdTe薄膜太阳电池进行刻划分隔。
3.如权利要求1所述，其特征是在完成其他功能膜层的彻底分割并形成整齐断面的同时，不可损伤透明导电层。
4.如权利要求1所述，其特征是使用离焦激光刻划技术，通过调节功率参数实现权利要求3所述的刻划工艺。
5.如权利要求1所述，其特征是刻划时选用光阑孔径为3mm，振镜工作台相对高度408mm，功率因子400，重频15kHz，刻划速度600mm/s，开/关光延时分别为80/120μs。
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|---|---|---|---|---|
| CN112582493A (zh) * | 2020-12-11 | 2021-03-30 | 中国科学院大连化学物理研究所 | 一种四象限光照传感器及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425550A (zh) * | 2007-10-22 | 2009-05-06 | 应用材料股份有限公司 | 用于薄膜光电装置的工艺测试器和测试方法 |
| CN106229377A (zh) * | 2016-08-17 | 2016-12-14 | 中山瑞科新能源有限公司 | 一种防止薄膜电池扫边后短路的方法 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425550A (zh) * | 2007-10-22 | 2009-05-06 | 应用材料股份有限公司 | 用于薄膜光电装置的工艺测试器和测试方法 |
| CN101494250A (zh) * | 2007-10-22 | 2009-07-29 | 应用材料股份有限公司 | 使用诊断装置的光电制造工艺监测及控制 |
| CN106229377A (zh) * | 2016-08-17 | 2016-12-14 | 中山瑞科新能源有限公司 | 一种防止薄膜电池扫边后短路的方法 |
Non-Patent Citations (1)
| Title |
|---|
| 岳磊 等: "《激光刻划制备集成碲化镉薄膜太阳电池的研究》", 《四川大学学报(自然科学版)》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582493A (zh) * | 2020-12-11 | 2021-03-30 | 中国科学院大连化学物理研究所 | 一种四象限光照传感器及其制备方法 |
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