[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN108046846B - A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof - Google Patents

A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof Download PDF

Info

Publication number
CN108046846B
CN108046846B CN201711354112.7A CN201711354112A CN108046846B CN 108046846 B CN108046846 B CN 108046846B CN 201711354112 A CN201711354112 A CN 201711354112A CN 108046846 B CN108046846 B CN 108046846B
Authority
CN
China
Prior art keywords
coating
layer coating
silicon
silica
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711354112.7A
Other languages
Chinese (zh)
Other versions
CN108046846A (en
Inventor
季勇升
杜宁
杨德仁
张亚光
杜英
陆介平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhenjiang Runchi New Material Technology Co.,Ltd.
Original Assignee
JIANGSU RUNCHI SOLAR ENERGY MATERIAL S&T CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGSU RUNCHI SOLAR ENERGY MATERIAL S&T CO Ltd filed Critical JIANGSU RUNCHI SOLAR ENERGY MATERIAL S&T CO Ltd
Priority to CN201711354112.7A priority Critical patent/CN108046846B/en
Publication of CN108046846A publication Critical patent/CN108046846A/en
Application granted granted Critical
Publication of CN108046846B publication Critical patent/CN108046846B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/89Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00Production of homogeneous polycrystalline material with defined structure
    • C30B28/04Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention disclose it is a kind of casting polysilicon exempt from spray crucible coating layer and preparation method thereof, the coating successively includes three-layer coating from inside to outside, wherein based on mass percentage, the ingredient of first layer coating includes 4.5~95% silicon oxynitride, 4.5~95% silica and 0.5~5% silica solution;The ingredient of second layer coating includes 5~50% silicon oxynitride, 0.5~50% silica, 0.5~50% silicon nitride, 0.5~5% silica solution and 0.5~5% PVA;The ingredient of third layer coating includes 0.5~95% silicon oxynitride, 0.5~95% silicon nitride, the PAA of 0.5~5% PVA and 0.5~5%.Present invention utilizes silicon oxynitrides both and silicon nitride, and the and feature that silicon oxynitride binding force is strong, it is designed by reasonable ingredient, solve the problems, such as that silicon nitride and sidewall of crucible binding force be not strong, enhance the intensity and compactness of coating, reduce defect and impurity in silicon ingot, help to improve the yield rate of silicon ingot, improves the stability and photoelectric conversion efficiency of photovoltaic module.

Description

A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof
Technical field
The present invention relates to the preparation fields of polysilicon casting crucible coating layer, and in particular to a kind of efficient polysilicon casting With exempt from spray crucible coating layer and preparation method thereof.
Background technique
Photovoltaic is a kind of important green sustainable energy, and casting polysilicon is the most important former material for preparing photovoltaic module One of material.The fewer higher photoelectric conversion efficiency in order to obtain, impurity and the defect for casting polysilicon the better.Polysilicon is being cast In the process, generally use high-purity silica crucible as container, but silicon material is in the case where high temperature melting, will and quartz, also It is that silica reacts, silicon liquid is caused to penetrate into inside crucible, in the case where the coefficient of expansion of quartz and silicon is inconsistent, The infiltration of silicon liquid may result in crucible rupture, so that the silicon liquid of high temperature flows out, it is possible to cause serious safety accident.Cause This, to solve this problem, quartz crucible surface is often sprayed one layer of silicon nitride coating.Since silicon nitride is a kind of high temperature resistant Ceramics, it not only property stablize, the silicon liquid for high temperature of getting along well reacts, and silicon liquid is bad to its wetability so that its It is not easy infiltration to enter to adhere to crucible, so that ingot casting goes on smoothly and smoothly demoulds.But although by silicon nitride spray finishing In crucible as release agent, however it remains many problems: first, the impurity inside silica crucible still can be spread at high temperature to be worn It crosses silicon nitride coating and enters silicon liquid, cause the increase of polycrystalline silicon impurities and defect, reduce the efficiency of photovoltaic module.Second, nitrogen SiClx itself and silica crucible binding force be not strong, so that silicon nitride is easy to fall in silicon liquid during ingot casting, forms nitridation Sila particle, silicon nitride inclusions point hardness is very high, not only increases silicon ingot internal flaw, and the photoelectricity for reducing photovoltaic module turns Efficiency is changed, and be easy to cause diamond wire to break when subsequent Buddha's warrior attendant wire cutting, leads to production accident.Third, nitrogen The angle of wetting of SiClx itself and silicon liquid is 45 °~50 °, and in the case where angle of wetting is lower than 90 °, solid liquid interface still has wetting The case where, not only make the nitrogen in silicon nitride diffuse more readily into inside silicon liquid the pollution caused to silicon ingot in this way, but also It is not smooth or even a possibility that split ingot to increase demoulding, ultimately causes the unstable of Ingot quality.
To solve the above-mentioned problems, the researcher in the industry proposes many schemes.
The Chinese patent of application number 201110281457.0 discloses one kind before spraying silicon nitride, increases in crucible surface Add containing silica solution~gel glass structure layer, increases the blocking to impurity in this way, but still without solving silicon nitride and two The not strong problem of silica binding force, the silicon nitride on surface still have the risk polluted in the silicon liquid fallen into.
A kind of barium silicate crystal layer is disclosed application No. is 201620841199.5 Chinese profession and silicon nitride coating is double The isolation method of layer, barium silicate crystal layer air-tightness is strong, and hardness is high, can prevent impurity inside crucible from expanding by bubble to silicon ingot It dissipates, reduces pollution of the crucible to silicon ingot.But silicic acid crystal of barium itself contains barium metal, at high temperature, inevitably The pollution that serious metal ion is caused inside silicon ingot can be largely diffused into.
The researchers such as Xiaoxiao Gong use mixes 3.8wt% nano silica in silicon nitride coating (Gong X,Du H,Zhang X,et al.Influence of the coating preparation method and of nanosilica addition on the bonding character of Si3N4,layer on a silica Crucible [J] .Ceramics International, 2014,40 (5): 7523~7529.), thus increase silicon nitride at The compactness and intensity of film reduce erosion of the silicon liquid to silicon nitride layer infiltration and to crucible.But the silica of nanometer is not It is only at high cost, it is not easy to prepare, and be very easy to reunion and micron-sized silicon nitride particle mismatch, it is difficult to uniformly mixing, It is difficult to reach corresponding effect in large-scale production process.
Summary of the invention
Exempt to spray crucible coating layer and its application the object of the present invention is to provide a kind of casting polysilicon.
Exempt to spray crucible another object of the present invention is to provide a kind of casting polysilicon.
Another object of the present invention is to provide a kind of preparation method for casting polysilicon and exempting from spray crucible.
Technical solution of the present invention specifically:
A kind of casting polysilicon exempts to spray crucible coating layer, which successively includes three-layer coating from inside to outside, wherein pressing quality Percentage composition meter,
The ingredient of first layer coating includes 4.5~95% silicon oxynitride, 4.5~95% silica and 0.5~5% Silica solution, in the coating, the sum of all components mass percentage is 100%;
The ingredient of second layer coating includes 5~50% silicon oxynitride, 0.5~50% silica, 0.5~50% Silicon nitride, 0.5~5% silica solution and 0.5~5% PVA, in the coating, the sum of all components mass percentage is 100%;
The ingredient of third layer coating includes 0.5~95% silicon oxynitride, 0.5~95% silicon nitride, 0.5~5% The PAA of PVA and 0.5~5%, in the coating, the sum of all components mass percentage is 100%.
As a kind of optimal technical scheme, the ingredient of the first layer coating includes 5~70% silicon oxynitride, 25~ 90% silica and 1~5% silica solution;The ingredient of the second layer coating includes 10~50% silicon oxynitride, 5~ 40% silica, 5~40% silicon nitride, 1~5% silica solution and 1~5% PVA;The third layer coating at Divide the silicon oxynitride including 10~35%, 60~85% silicon nitride, the PAA of 1~5% PVA and 1~5%.
It is further preferred that the ingredient of the first layer coating includes 5~28% silicon oxynitride, 70~90% dioxy SiClx and 2~5% silica solution, still more preferably, the ingredient of the first layer coating includes 10~25% silicon oxynitride, 72~85% silica and 2~5% silica solution;The ingredient of the second layer coating includes 30~50% nitrogen oxidation Silicon, 20~35% silica, 20~35% silicon nitride, 2~5% silica solution and 2~5% PVA;The third layer The ingredient of coating includes 10~25% silicon oxynitride, 65~85% silicon nitride, the PAA of 2~5% PVA and 2~5%.
The first layer coating with a thickness of 20~40 μm, the second layer coating with a thickness of 30~50 μm, described Three-layer coating with a thickness of 50~100 μm.
Alcoholysis degree >=98% of the PVA;Molecular weight >=1250000 PAA.Product can be improved in the raw material of high quality Quality, purity >=99% of the silicon oxynitride, the purity of the silica, silicon nitride and silica solution is >=99.99%.
Above-mentioned coating exempts to spray the application in crucible in preparation casting polysilicon.
A kind of casting polysilicon exempts to spray crucible, and above-mentioned coating is sprayed on the surface of silica crucible.
A kind of casting polysilicon exempts from the preparation method of spray crucible, successively sprays three layers of painting from inside to outside in quartz crucible surface Layer.Its specific preparation process are as follows: first layer coating is sprayed in quartz crucible surface first, based on mass percentage, described the The ingredient of one layer of coating includes 4.5~95% silicon oxynitride, 4.5~95% silica and 0.5~5% silica solution; Then second layer coating is sprayed in first layer coating surface, based on mass percentage, the ingredient of the second layer coating includes 5 ~50% silicon oxynitride, 0.5~50% silica, 0.5~50% silicon nitride, 0.5~5% silica solution and 0.5 ~5% PVA;Finally third layer coating, based on mass percentage, the third layer coating are sprayed in second layer coating surface Include 0.5~95% silicon oxynitride, 0.5~95% silicon nitride, the PAA of 0.5~5% PVA and 0.5~5%.
In above-mentioned method, the first layer coating with a thickness of 20~40 μm, the second layer coating with a thickness of 30~50 μm, the third layer coating with a thickness of 50~100 μm.
Above-mentioned method, alcoholysis degree >=98% of the PVA;Molecular weight >=1250000 PAA.
Nitrogen oxidation is utilized by preparing the coating of three layers of heterogeneity in high-purity silica pot inner wall in the preparation method A kind of interphase as silicon nitride and silica of silicon, constitutive property not only and silicon nitride, but also have with silica relatively strong Similitude, so itself and silicon nitride, silica have stronger binding force so that whole coating have bigger intensity and Higher consistency reduces the quantity of impure point in silicon liquid, finally reduces ingot casting to be substantially reduced the risk that silicon nitride falls off The quantity of red sector, improves the yield rate of ingot casting, and increases the photoelectric conversion efficiency of photovoltaic module.
Unless otherwise indicated, raw material according to the present invention can be obtained by being bought with market.
Compared with prior art, the present invention has the advantage that
Present invention utilizes silicon oxynitrides not only and silicon nitride, but also had stronger binding force with silica, solved earthenware Crucible surface direct spraying silicon nitride, silicon nitride and the not strong problem of silica surface binding force.
By preparing the coating of three kinds of heterogeneities, the ingenious variation that three kinds of ingredients are utilized: first layer coating contains dioxy SiClx and silicon oxynitride ingredient and sidewall of crucible have very strong binding force;Second layer coating contains silica, silicon oxynitride and nitrogen SiClx belongs to the middle layer of first layer and third layer, first layer and third layer firm connection can be got up;Third layer nitrogen Silicon and silicon oxynitride, it is both strong with second layer binding force, in turn ensure that silicon ingot smoothly demoulds, the sequence of three coatings also significant shadow Ring the effect of coating.
In short, enhance the intensity and consistency of coating by the design of above-mentioned coating, reduce impurity in silicon ingot and Defect improves the yield rate of silicon ingot, finally improves the stability and photoelectric conversion efficiency of photovoltaic module.
Specific embodiment
Below by specific embodiment, the invention will be further described, but protection scope of the present invention be not limited to it is following Embodiment.
Embodiment 1
First layer coating is prepared, based on mass percentage, ingredient includes 10% silicon oxynitride, 85% titanium dioxide Silicon, 5% silica solution, wherein the purity of purity >=99% of the silicon oxynitride, the silica and silica solution is both greater than 99.99%.
Second layer coating is prepared, based on mass percentage, ingredient includes 50% silicon oxynitride, 20% titanium dioxide Silicon, 20% silicon nitride, 5% silica solution, 5% PVA, wherein purity >=99% of the silicon oxynitride, the titanium dioxide The alcoholysis degree that the purity of silicon, silicon nitride and silica solution is both greater than 99.99%, PVA is 98%.
Third layer coating is prepared, based on mass percentage, ingredient includes 10% silicon oxynitride, 80% nitridation Silicon, 5% PVA, 5% PAA, wherein the purity of purity >=99% of the silicon oxynitride, the silicon nitride is both greater than The alcoholysis degree of 99.99%, PVA are that 98%, PAA molecular weight is 1250000.
Firstly, in quartz crucible surface even application first layer coating, then, in first layer coating surface even application Two layers of coating, finally, in second layer coating surface even application third layer coating.The first layer coating layer thickness is 20~30 μ M, the second layer coating layer thickness are 30~40 μm, and the third layer coating layer thickness is 80~100 μm.
Coating manufactured in the present embodiment is subjected to adhesive force test, as a result 845kPa, is much higher than common coating, i.e. stone The adhesive force that English crucible surface directly sprays silicon nitride is 310kPa.The crucible for being coated with this coating is applied to casting polysilicon, Then the polysilicon cast is sliced, obtains A piece (high-quality silicon wafer) yield and reach 92.8%, is obtained much higher than common coating 90.3% yield.This is because consistency (the 4.68g/cm of this coating3) and intensity be improved so that entering ingot casting In impure point tail off, to ingot casting carry out Buddha's warrior attendant wire cutting when, accordingly due to impure point and chipping even collapse line probability become It is few, so that whole slice yield is improved.In this way, greatly improving whole yield rate and production efficiency.
Embodiment 2
First layer coating is prepared, based on mass percentage, ingredient includes 20% silicon oxynitride, 76% titanium dioxide Silicon, 4% silica solution, wherein the purity of purity >=99% of the silicon oxynitride, the silica and silica solution is both greater than 99.99%.
Second layer coating is prepared, based on mass percentage, ingredient includes 40% silicon oxynitride, 26% titanium dioxide Silicon, 26% silicon nitride, 4% silica solution, 4% PVA, wherein purity >=99% of the silicon oxynitride, the titanium dioxide The alcoholysis degree that the purity of silicon, silicon nitride and silica solution is both greater than 99.99%, PVA is 98%.
Third layer coating is prepared, based on mass percentage, ingredient includes 20% silicon oxynitride, 72% nitridation Silicon, 4% PVA, 4% PAA, wherein the purity of purity >=99% of the silicon oxynitride, the silicon nitride is both greater than The alcoholysis degree of 99.99%, PVA are that 98%, PAA molecular weight is 3000000.
Firstly, in quartz crucible surface even application first layer coating, then, in first layer coating surface even application Two layers of coating, finally, in second layer coating surface even application third layer coating.The first layer coating layer thickness is 30~35 μ M, second layer coating layer thickness are 40~45 μm, and third layer coating layer thickness is 65~80 μm.
Coating manufactured in the present embodiment is subjected to adhesive force test, as a result 903kPa, is much higher than common coating, i.e. stone The adhesive force that English crucible surface directly sprays silicon nitride is 310kPa.The crucible for being coated with this coating is applied to casting polysilicon, Then the polysilicon cast is sliced, obtains A piece (high-quality silicon wafer) yield and reach 93.2%, is obtained much higher than common coating 90.3% yield.This is because consistency (the 5.01g/cm of this coating3) and intensity be improved so that entering ingot casting In impure point tail off, to ingot casting carry out Buddha's warrior attendant wire cutting when, accordingly due to impure point and chipping even collapse line probability become It is few, so that whole slice yield is improved.In this way, greatly improving whole yield rate and production efficiency.
Embodiment 3
First layer coating is prepared, based on mass percentage, ingredient includes 25% silicon oxynitride, 72% titanium dioxide Silicon, 3% silica solution, wherein the purity of purity >=99% of the silicon oxynitride, the silica and silica solution is both greater than 99.99%.
Second layer coating is prepared, based on mass percentage, ingredient includes 30% silicon oxynitride, 32% titanium dioxide Silicon, 32% silicon nitride, 3% silica solution, 3% PVA, wherein purity >=99% of the silicon oxynitride, the titanium dioxide The alcoholysis degree that the purity of silicon, silicon nitride and silica solution is both greater than 99.99%, PVA is 98%.
Third layer coating is prepared, based on mass percentage, ingredient includes 25% silicon oxynitride, 69% nitridation Silicon, 3% PVA, 3% PAA, wherein the purity of purity >=99% of the silicon oxynitride, the silicon nitride is both greater than The alcoholysis degree of 99.99%, PVA are that 98%, PAA molecular weight is 4000000.
Firstly, in quartz crucible surface even application first layer coating, then, in first layer coating surface even application Two layers of coating, finally, in second layer coating surface even application third layer coating.The first layer coating layer thickness is 35~40 μ M, second layer coating layer thickness are 45~50 μm, and third layer coating layer thickness is 50~65 μm.
Coating manufactured in the present embodiment is subjected to adhesive force test, as a result 914kPa, is much higher than common coating, i.e. stone The adhesive force that English crucible surface directly sprays silicon nitride is 310kPa.The crucible for being coated with this coating is applied to casting polysilicon, Then the polysilicon cast is sliced, obtains A piece (high-quality silicon wafer) yield and reach 93.8%, is obtained much higher than common coating 90.3% yield.This is because consistency (the 5.17g/cm of this coating3) and intensity be improved so that entering ingot casting In impure point tail off, to ingot casting carry out Buddha's warrior attendant wire cutting when, accordingly due to impure point and chipping even collapse line probability become It is few, so that whole slice yield is improved.In this way, greatly improving whole yield rate and production efficiency.
Comparative example 1
On the contrary, using technological parameter same as Example 3, but silicon oxynitride is not added, specific scheme is as follows:
First layer coating is prepared, based on mass percentage, 25% silicon nitride, 72% silica, 3% silicon is molten Glue, wherein the purity of silicon nitride, silica and silica solution is both greater than 99.99%.
Second layer coating is prepared, based on mass percentage, 32% silica, 62% silicon nitride, 3% silicon is molten Glue, 3% PVA, wherein the alcoholysis degree that the purity of silica, silicon nitride and silica solution is both greater than 99.99%, PVA is 98%.
Third layer coating is prepared, based on mass percentage, 94% silicon nitride, 3% PVA, 3% PAA, wherein It is 4000000 that alcoholysis degree of the purity of silicon nitride greater than 99.99%, PVA, which is 98%, PAA molecular weight,.
Firstly, in quartz crucible surface even application first layer coating, then, in first layer coating surface even application Two layers of coating, finally, in second layer coating surface even application third layer coating.The first layer coating layer thickness is 35~40 μ M, second layer coating layer thickness are 45~50 μm, and third layer coating layer thickness is 50~65 μm.
Coating prepared by this comparative example carries out adhesive force test, as a result 356kPa, close to common coating, i.e., quartzy The adhesive force that crucible surface directly sprays silicon nitride is 310kPa, but (strictly according to the facts far below the coating adhesion of addition silicon oxynitride Apply example 1,2,3).Coating consistency is 3.11g/cm3, the crucible for being coated with this coating is applied to casting polysilicon, then will The polysilicon cast is sliced, and is obtained A piece (high-quality silicon wafer) yield and is reached 90.8%, 90.3% obtained higher than common coating Yield.I.e. yield is slightly above common coating, but far below the coating of addition silicon oxynitride.
Comparative example 2
First layer coating is prepared, based on mass percentage, ingredient includes 30% silicon oxynitride, 32% titanium dioxide Silicon, 32% silicon nitride, 3% silica solution, 3% PVA, wherein purity >=99% of the silicon oxynitride, the titanium dioxide The alcoholysis degree that the purity of silicon, silicon nitride and silica solution is both greater than 99.99%, PVA is 98%.
Second layer coating is prepared, based on mass percentage, ingredient includes 25% silicon oxynitride, 72% titanium dioxide Silicon, 3% silica solution, wherein the purity of purity >=99% of the silicon oxynitride, the silica and silica solution is both greater than 99.99%.
Third layer coating is prepared, based on mass percentage, ingredient includes 25% silicon oxynitride, 69% nitridation Silicon, 3% PVA, 3% PAA, wherein the purity of purity >=99% of the silicon oxynitride, the silicon nitride is both greater than The alcoholysis degree of 99.99%, PVA are that 98%, PAA molecular weight is 4000000.
Firstly, in quartz crucible surface even application first layer coating, then, in first layer coating surface even application Two layers of coating, finally, in second layer coating surface even application third layer coating.The first layer coating layer thickness is 35~40 μ M, second layer coating layer thickness are 45~50 μm, and third layer coating layer thickness is 50~65 μm.
Coating prepared by this comparative example carries out adhesive force test, as a result 611kPa, is significantly higher than common coating, i.e., The adhesive force that quartz crucible surface directly sprays silicon nitride is 310kPa.But far below the coating adhesion of addition silicon oxynitride (such as embodiment 1,2,3).Coating consistency is 4.25g/cm3, the crucible for being coated with this coating is applied to casting polysilicon, so The polysilicon cast is sliced afterwards, A piece (high-quality silicon wafer) yield is obtained and reaches 91.6%, obtained higher than common coating 90.3% yield, but it is far below the coating of embodiment 1,2,3.

Claims (9)

1. a kind of casting polysilicon exempts to spray crucible coating layer, which is characterized in that the coating successively includes three-layer coating from inside to outside, In based on mass percentage,
The ingredient of first layer coating include 4.5 ~ 95% silicon oxynitride, 4.5 ~ 95% silica and 0.5 ~ 5% silica solution;
The ingredient of second layer coating include 5 ~ 50% silicon oxynitride, 0.5 ~ 50% silica, 0.5 ~ 50% silicon nitride, 0.5 ~ 5% silica solution and 0.5 ~ 5% PVA;
The ingredient of third layer coating includes 0.5 ~ 95% silicon oxynitride, 0.5 ~ 95% silicon nitride, 0.5 ~ 5% PVA and 0.5 ~ 5% PAA.
2. casting polysilicon according to claim 1 exempts to spray crucible coating layer, which is characterized in that based on mass percentage, The ingredient of the first layer coating include 5 ~ 70% silicon oxynitride, 25 ~ 90% silica and 1 ~ 5% silica solution;
The ingredient of the second layer coating include 10 ~ 50% silicon oxynitride, 5 ~ 40% silica, 5 ~ 40% silicon nitride, 1 ~ 5% silica solution and 1 ~ 5% PVA;
The ingredient of the third layer coating include 10 ~ 35% silicon oxynitride, 60 ~ 85% silicon nitride, 1 ~ 5% PVA's and 1 ~ 5% PAA。
3. casting polysilicon according to claim 1 or 2 exempts to spray crucible coating layer, which is characterized in that the first layer coating With a thickness of 20 ~ 40 μm, the second layer coating with a thickness of 30 ~ 50 μm, the third layer coating with a thickness of 50 ~ 100 μm.
4. casting polysilicon according to claim 1 or 2 exempts to spray crucible coating layer, which is characterized in that the alcoholysis degree of the PVA ≥98%;Molecular weight >=1250000 PAA.
5. any coating exempts to spray the application in crucible in preparation casting polysilicon in claim 1 ~ 4.
6. a kind of casting polysilicon exempts to spray crucible, which is characterized in that any in the surface of silica crucible spraying claim 1 ~ 4 The coating.
7. a kind of casting polysilicon exempts to spray the preparation method of crucible, it is characterised in that: quartz crucible surface from inside to outside successively Spray three-layer coating;
First quartz crucible surface spray first layer coating, based on mass percentage, the first layer coating at subpackage Include 4.5 ~ 95% silicon oxynitride, 4.5 ~ 95% silica and 0.5 ~ 5% silica solution;
Then second layer coating, based on mass percentage, the ingredient of the second layer coating are sprayed in first layer coating surface Including 5 ~ 50% silicon oxynitride, 0.5 ~ 50% silica, 0.5 ~ 50% silicon nitride, 0.5 ~ 5% silica solution and 0.5 ~ 5% PVA;
Third layer coating finally is sprayed in second layer coating surface, based on mass percentage, the third layer coating includes 0.5 ~ 95% silicon oxynitride, 0.5 ~ 95% silicon nitride, the PAA of 0.5 ~ 5% PVA and 0.5 ~ 5%.
8. according to the method described in claim 7, it is characterized by: the first layer coating with a thickness of 20 ~ 40 μm, described Two layers of coating with a thickness of 30 ~ 50 μm, the third layer coating with a thickness of 50 ~ 100 μm.
9. according to the method described in claim 7, it is characterized by: alcoholysis degree >=98% of the PVA;The PAA molecular weight >= 1250000。
CN201711354112.7A 2017-12-15 2017-12-15 A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof Active CN108046846B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711354112.7A CN108046846B (en) 2017-12-15 2017-12-15 A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711354112.7A CN108046846B (en) 2017-12-15 2017-12-15 A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof

Publications (2)

Publication Number Publication Date
CN108046846A CN108046846A (en) 2018-05-18
CN108046846B true CN108046846B (en) 2019-02-19

Family

ID=62132712

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711354112.7A Active CN108046846B (en) 2017-12-15 2017-12-15 A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof

Country Status (1)

Country Link
CN (1) CN108046846B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112536200B (en) * 2019-09-21 2022-04-01 中材江苏太阳能新材料有限公司 Side wall improved coating crucible for ingot single polycrystal and preparation method thereof
CN111589678A (en) * 2020-05-29 2020-08-28 徐州协鑫太阳能材料有限公司 Preparation method of compact quartz crucible high-purity coating

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101942693A (en) * 2009-07-08 2011-01-12 合晶科技股份有限公司 Quartz glass crucible with protective layer and manufacturing method thereof
EP2589687A1 (en) * 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
CN203485502U (en) * 2013-07-30 2014-03-19 东海晶澳太阳能科技有限公司 Quartz crucible coating for producing efficient polycrystalline silicon ingot
FR3026414B1 (en) * 2014-09-26 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives CREUSET FOR CRYSTALLIZING MULTI-CRYSTALLINE SILICON OR QUASI-MONOCRYSTALLINE BY REPEATING ON GERM

Also Published As

Publication number Publication date
CN108046846A (en) 2018-05-18

Similar Documents

Publication Publication Date Title
CN101913776B (en) Preparation method of silicon nitride coating quartz crucible
CN108046846B (en) A kind of casting polysilicon exempts to spray crucible coating layer and preparation method thereof
CN106801252B (en) A kind of quartz ceramic crucible for polycrystalline silicon ingot casting and preparation method thereof
CN102453955B (en) Crucible coating for purification and ingot casting of solar grade polysilicon and preparation method thereof as well as crucible
CN1309879C (en) Vessel for holding silicon and method of producing the same
CN112144115B (en) Quartz crucible with long service life and low deformation rate and preparation method thereof
EP2660201B1 (en) Polycrystalline silicon ingot casting mold and method for producing the same, and slurry used for its method
EP2660200B1 (en) Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same
CN101696514A (en) Method for producing polycrystal ingot
CN102877126A (en) Large polycrystalline silicon crucible, coating slurry thereof and preparation method of coating
MX2008000150A (en) Crucible for the crystallization of silicon.
CN104651931A (en) Quartz crucible capable of controlling nucleation and impurity diffusion and used for polycrystal cast ingot and preparation method of quartz crucible
CN107160296A (en) A kind of high intensity Low-temperature Sintering Glass-ceramics bonding agent and preparation method thereof
CN108213365B (en) A kind of non-reacted covering slag of high-aluminum steel
CN107916451B (en) A kind of casting polysilicon exempts to spray crucible
CN201857440U (en) Crucible for purification and ingot casting of solar-grade polysilicon
CN109627050A (en) A kind of quartz crucible inner surface coating and preparation method thereof
JP2617822B2 (en) Method for producing non-sintered cristobalite particles
CN105837027B (en) A kind of surface is covered with the preparation process of the tempered glass of copper-based composite coating
CN111589678A (en) Preparation method of compact quartz crucible high-purity coating
CN106986554B (en) Manufacturing method of quartz crucible with ultra-pure coating
US9284207B2 (en) Method of manufacturing granulated silica powder, method of manufacturing vitreous silica crucible
CN111020695B (en) Preparation method of low-oxygen quartz crucible
CN102898034A (en) Method for manufacturing silicon nitride coating of crucible for crystalline silicon ingot casting
CN103014834A (en) Method for improving casting quality of polycrystalline silicon ingot

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210811

Address after: 212000 No. 18, Xingye North Road, new energy industrial park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province

Patentee after: Zhenjiang Runchi New Material Technology Co.,Ltd.

Address before: 212218 Yangzhong Changwang new material industrial park, Zhenjiang City, Jiangsu Province

Patentee before: JIANGSU RUNCHI SOLAR ENERGY MATERIAL SCIENCE & TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right