CN108022833A - Prepare method, semiconductor structure and the field-effect transistor of semiconductor structure - Google Patents
Prepare method, semiconductor structure and the field-effect transistor of semiconductor structure Download PDFInfo
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- CN108022833A CN108022833A CN201711143838.6A CN201711143838A CN108022833A CN 108022833 A CN108022833 A CN 108022833A CN 201711143838 A CN201711143838 A CN 201711143838A CN 108022833 A CN108022833 A CN 108022833A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims abstract description 54
- 230000005669 field effect Effects 0.000 title claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000004411 aluminium Substances 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 39
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 26
- 229910052593 corundum Inorganic materials 0.000 claims description 26
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 229910017105 AlOxNy Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- 241001062009 Indigofera Species 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 287
- 239000000463 material Substances 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention proposes the method for preparing semiconductor structure, semiconductor structure and field-effect transistor.This method includes：Nitride semiconductor layer is provided；Boundary layer is set in the upper surface of the nitride semiconductor layer, the boundary layer contains aluminium element；First medium layer is set on the nitride semiconductor layer, and the first medium layer is formed by carrying out thermal oxide or hot nitrogen oxidation to the boundary layer, and the boundary layer is at least partly converted into the first medium layer；And metal layer is set on surface of the first medium layer away from the nitride semiconductor layer.Thus, it is possible to the semiconductor structure of the dielectric layer with high quality, excellent interface characteristic is obtained using simple production technology.
Description
Technical field
The present invention relates to electronic field, and in particular, to prepares method, semiconductor structure and the field-effect of semiconductor structure
Transistor.
Background technology
Dielectric film is with its excellent insulation performance and dielectric properties, in semiconductor integrated circuit, film hybrid integrated electricity
It is used widely in road and some filming components.The dielectric film of high quality is even more necessary group of many electricity devices
Into part, especially in MOS (Metal-oxide-semicondutor) device, the quality and dielectric film and substrate of dielectric film it
Between interfacial characteristics all it is particularly important that, the performance of device is influenced very big.Therefore, the preparation of dielectric film plays a key effect.
For preparation media film method in addition to conventional deposition process, the method that hot oxygen can also be used.Existed by thermal oxide
The insulating oxide of itself is obtained in substrate, density smaller the defects of the interface of oxide layer that hot oxygen obtains and substrate, and
It is very easy to implement.For example, with hot oxide growth SiO2As Si Base Metals-Oxide-Semiconductor Field effect transistor
(MOSFET) gate medium, its interface state density is than the oxide dielectric thin film smaller obtained by deposition process, gate medium
Better quality.
However, the current method for preparing semiconductor structure, semiconductor structure and field-effect transistor still has much room for improvement.
The content of the invention
The present invention is the following discovery based on inventor and completes：
At present, there are the problem of poor-performing more by the MOSFET of Group III-V semiconductor.Inventor by further investigation and
Many experiments find, this second-rate and itself and semiconductor base mainly due to the dielectric layer of above-mentioned field-effect transistor
Between interfacial characteristics it is poor caused by.Specifically, the dielectric layer of the MOSFET of Group III-V semiconductor is more using deposition at present
Mode is formed, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD) form Al2O3Or other oxides, this kind of Jie
Interface quality between matter and Group III-V semiconductor is poor, and interface state density is high, causes that element leakage is big, less reliable.This
Outside, inventor has found,, can be in semiconductor base according to the method preparation media layer of hot oxygen for Group III-V semiconductor
The upper formation oxide of itself, and the oxide is not appropriate for making dielectric layer.This is because the oxide is unstable, easily formed
Removable electric charge, and quality is also poor, therefore very big influence can be caused to the performance of device.
It is contemplated that solve at least some of the technical problems in related technologies.
In view of this, in one aspect of the invention, the present invention proposes a kind of method for preparing semiconductor structure.The party
Method includes：Nitride semiconductor layer is provided；Boundary layer is set in the upper surface of the nitride semiconductor layer, the boundary layer contains
There is aluminium element；First medium layer is set on the nitride semiconductor layer, and the first medium layer is by the interface
What layer carried out thermal oxide or hot nitrogen oxidation and formed, the boundary layer is at least partly converted into the first medium layer；And
Surface of the first medium layer away from the nitride semiconductor layer sets metal layer.Thus, it is possible to utilize simple production
Technique obtains the semiconductor structure of the dielectric layer with high quality, excellent interface characteristic.
According to an embodiment of the invention, the nitride semiconductor layer is set on the base layer.Partly led thus, it is possible to provide
The substrate of body structure.
According to an embodiment of the invention, the basalis includes at least one of semi-conducting material and insulating materials, institute
Stating basalis includes at least one of Si, SiC, AlN, sapphire and GaN.Thus, it is possible to use the above-mentioned material derived from a wealth of sources
Material forms basalis.
According to an embodiment of the invention, at least a portion of the upper surface of the nitride semiconductor layer for non-polar plane or
Semi-polarity face.Thus, influence of the electric charge to dielectric layer is reduced.
According to an embodiment of the invention, the nitride semiconductor layer include GaN crystal, AlN crystal, InN crystal,
InmAlnGa1-m-nAt least one of N crystal, wherein, 0≤m≤1,0≤n≤1.Above-mentioned nitride-based semiconductor has preferable electricity
Performance is learned, is conducive to improve the performance of the device formed using the semiconductor structure.
According to an embodiment of the invention, the boundary layer includes the nitridation containing Al with amorphous, pseudo-crystal or crystal structure
At least one of thing, the first medium layer are to aoxidize the high k formed by the thermal oxide or hot nitrogen by the boundary layer to be situated between
What matter was formed.Thus, it is possible to the dielectric layer with high quality, excellent interface characteristic is obtained using simple production technology.
According to an embodiment of the invention, the boundary layer is AlN, and the thickness of the boundary layer is 1-100nm.Thus, may be used
To improve the breakdown characteristics of the dielectric layer formed by the boundary layer.
According to an embodiment of the invention, the high K medium is Al2O3Or AlOxNy, wherein 0<x<1.5,0≤y<1.Thus,
Dielectric layer has the advantages that high quality, excellent interface characteristic.
According to an embodiment of the invention, the temperature of the thermal oxide or hot nitrogen oxidation is 600-1000 DEG C.Thus, may be used
So that boundary layer is converted into dielectric layer.
According to an embodiment of the invention, before the metal layer is set, in the first medium layer away from the nitridation
The surface of thing semiconductor layer further sets second dielectric layer, in the second dielectric layer away from the nitride semiconductor layer
Surface sets the metal layer.Second dielectric layer is set so as to so that first medium layer is made thin, and then the can be improved
The quality of one dielectric layer, while two-layered medium layer can be with the breakdown voltage of resistance to higher.
According to an embodiment of the invention, the second dielectric layer is by atomic layer deposition, magnetron sputtering or plasma
Strengthen what chemical vapor deposition was formed, optionally, the second dielectric layer includes Al2O3、SiO2、HfO2、TiO2、ZrO2、La2O3
At least one of.Thus, it is possible to obtain second dielectric layer using simple production technology.
According to an embodiment of the invention, the boundary layer is when setting the nitride semiconductor layer on the basalis
Formed using in-situ deposition technology.Thus, it is possible to reduce interface state density, excellent interface performance is put forward.
According to an embodiment of the invention, the boundary layer be by metal-organic chemical vapor deposition equipment, atomic layer deposition,
What magnetron sputtering or plasma enhanced chemical vapor deposition were formed.Thus, it is possible to obtain interface using simple production technology
Layer.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to an embodiment of the invention, should be partly
Conductor structure is prepared by foregoing method, and thus, which has prepared by foregoing method half
The whole features and advantage of conductor structure, details are not described herein.Generally speaking, the dielectric layer of the semiconductor structure has high-quality
The advantages of amount and excellent interface performance.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to an embodiment of the invention, should be partly
Conductor structure includes：Nitride semiconductor layer；Boundary layer, the boundary layer are arranged on the upper table of the nitride semiconductor layer
Face, the boundary layer contain aluminium element；First medium layer, the first medium layer are to pass through thermal oxide or heat by the boundary layer
Nitrogen oxidation and formed, the boundary layer is partly or entirely converted into the first medium layer；And metal layer, the metal layer
It is arranged on the side of the first medium layer away from the nitride semiconductor layer.Thus, the dielectric layer tool of the semiconductor structure
There is the advantages of high quality and excellent interface performance.
According to an embodiment of the invention, which further comprises basalis, and the basalis is arranged on described
Nitride semiconductor layer lower surface.Thus, there is provided the substrate of semiconductor structure.
According to an embodiment of the invention, the basalis includes at least one of Si, SiC, AlN, sapphire and GaN.
Thus, it is possible to form basalis using the above-mentioned material derived from a wealth of sources.
According to an embodiment of the invention, at least a portion of the nitride semiconductor layer upper surface is non-polar plane or half
Polar surface.Thus, it is possible to reduce influence of the electric charge to dielectric layer on nitride semiconductor layer.
According to an embodiment of the invention, the nitride semiconductor layer include GaN crystal, AlN crystal, InN crystal,
InmAlnGa1-m-nAt least one of N crystal, wherein, 0≤m≤1,0≤n≤1.Above-mentioned nitride-based semiconductor has preferable electricity
Performance is learned, is conducive to improve the performance of the device formed using the semiconductor structure.
According to an embodiment of the invention, the boundary layer includes the nitridation containing Al with amorphous, pseudo-crystal or crystal structure
At least one of thing, the first medium layer are formed for high K medium.Thus, it is possible to improve the quality of dielectric layer.
According to an embodiment of the invention, the boundary layer is formed by AlN, and the thickness of the boundary layer is 1-100nm.
Thus, it is possible to improve the breakdown characteristics of the dielectric layer formed by boundary layer.
According to an embodiment of the invention, the high K medium is Al2O3Or AlOxNy, wherein 0<x<1.5,0≤y<1.Thus,
Dielectric layer has the advantages that high quality, excellent interface characteristic.
According to an embodiment of the invention, which further comprises：Second dielectric layer, the second dielectric layer are set
Put between the first medium layer and the metal layer.Thus, it is possible to higher-quality first medium layer is obtained, at the same it is double-deck
Dielectric layer can be with the breakdown voltage of resistance to higher.
According to an embodiment of the invention, the second dielectric layer includes Al2O3、SiO2、HfO2、TiO2、ZrO2、La2O3Extremely
It is one of few.Thus, it is possible to form second dielectric layer using the above-mentioned material derived from a wealth of sources.
In another aspect of this invention, the present invention proposes a kind of field-effect transistor.According to an embodiment of the invention, should
Field-effect transistor includes foregoing semiconductor structure.Thus, which has previously described semiconductor
The whole features and advantage of structure, details are not described herein.Generally speaking, the performance of device can be improved.
Brief description of the drawings
Fig. 1 shows the flow diagram of the method according to an embodiment of the invention for preparing semiconductor structure；
Fig. 2 shows the structure diagram of semiconductor structure according to an embodiment of the invention；And
Fig. 3 shows the structure diagram of semiconductor structure in accordance with another embodiment of the present invention.
Description of reference numerals：
100：Nitride semiconductor layer；200：Boundary layer；300：First medium layer；400：Metal layer；500：Basalis；
600：Second dielectric layer.
Embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or has the function of same or like element.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, the orientation of the instruction such as term " on ", " under " or position relationship are based on shown in the drawings
Orientation or position relationship, are for only for ease of the description present invention rather than require the present invention must be with specific azimuth configuration and behaviour
Make, therefore be not considered as limiting the invention.
In one aspect of the invention, the present invention proposes a kind of method for preparing semiconductor structure.According to the present invention
Embodiment, with reference to figure 1, this method includes：
S100：Nitride semiconductor layer is provided
In this step, nitride semiconductor layer is prepared.According to an embodiment of the invention, nitride semiconductor layer can wrap
Include GaN crystal, AlN crystal, InN crystal, InmAlnGa1-m-nAt least one of N crystal, wherein, 0≤m≤1,0≤n≤1.Example
Such as, can be that nitride semiconductor layer is formed by the multilayer hetero-structure of above-mentioned Crystallization.By above-mentioned Group III-V semiconductor structure
Into nitride semiconductor layer, one side self performance is more excellent, and available for preparing, the more excellent field-effect of electric property is brilliant
The semiconductor devices such as body pipe, on the other hand, the semiconductor layer that above-mentioned material is formed relatively simple can pass through subsequent step shape
The boundary layer and dielectric layer good into interface quality, there is provided form the substrate of dielectric layer.
In addition, inventor has found, the charge accumulation of nitride semiconductor layer upper surface excessively can be to the medium that is subsequently formed
Layer has an impact, and therefore, to further improve the quality for the dielectric layer being subsequently formed, can control nitride semiconductor layer surface
Electric charge.Specifically, according to an embodiment of the invention, at least a portion that can make the upper surface of nitride semiconductor layer is non-
Polar surface or semi-polarity face.Thus, it is possible to the charge accumulated on nitride semiconductor layer is reduced, so as to reduce in subsequent step
The influence of the dielectric layer of formation.
According to an embodiment of the invention, nitride semiconductor layer can also be set on the base layer.It is real according to the present invention
Example is applied, at least one of semi-conducting material and insulating materials can be included by forming the material of basalis.Specifically, basalis can
With including at least one of Si, SiC, AlN, sapphire and GaN.Thus, it is possible to formed using the above-mentioned material derived from a wealth of sources
Basalis.
S200：In the upper surface of nitride semiconductor layer, boundary layer is set
According to an embodiment of the invention, in this step, boundary layer is set in the upper surface of nitride semiconductor layer.The boundary
Surface layer can be in subsequent step, and partly or entirely conversion forms dielectric layer.As previously mentioned, for the half of Group III-V semiconductor
For conductor structure, interface quality difference etc. can be caused by directly forming medium of oxides layer on the semiconductor layer using the method for deposition
Problem, and thermal oxide formation dielectric layer can also generate the oxide of semiconductor layer material itself, influence device performance.Invention human hair
It is existing, boundary layer is such as formed on nitride semiconductor layer first, then thermal oxide or hot nitrogen oxidation are carried out to boundary layer, by boundary layer
Dielectric layer partly or entirely is converted to, then can be solved the above problems：On the one hand, the boundary layer formed in this step have compared with
For good interface state, even if can not subsequently be fully converted to dielectric layer, the performance of semiconductor devices will not be caused
Negative effect；On the other hand, for the boundary layer during thermal oxide or hot nitrogen aoxidize, the oxide of generation is interface state
Preferably, the oxide of dielectric layer is can be used as, therefore thermal oxide or hot nitrogen oxidizing process is also not present to have an impact device quality
Oxide the problem of.
According to an embodiment of the invention, which contains aluminium element.Specifically, boundary layer can include with amorphous,
At least one of nitride containing Al of pseudo-crystal or crystal structure.For example, according to an embodiment of the invention, the nitride of the Al can
Think AlN, AlGaN, InAlN etc..According to a particular embodiment of the invention, boundary layer can be AlN.By being carried out to boundary layer
Hot oxygen processing, can obtain high quality, the dielectric layer of excellent interface characteristic.In addition, inventor has found, the thickness of dielectric layer is larger
Can be with the breakdown voltage of resistance to higher, in other words, the larger breakdown characteristics that can improve dielectric layer of thickness of boundary layer.By
This, according to an embodiment of the invention, the thickness of boundary layer can be 1-100nm.
Preparation method on boundary layer is not particularly limited, and those skilled in the art can be set as the case may be
Meter.For example, according to an embodiment of the invention, boundary layer can be by metal-organic chemical vapor deposition equipment, atomic layer deposition,
What magnetron sputtering and plasma enhanced chemical vapor deposition were formed.According to a particular embodiment of the invention, boundary layer can be with
It is to set to be formed using in-situ deposition technology during nitride semiconductor layer on the base layer.Boundary can be reduced by in-situ deposition
The face density of states, puies forward excellent interface performance.
According to an embodiment of the invention, when boundary layer is using deposition and the formation of the method for sputtering, boundary layer is being formed
Also need to be surface-treated nitride semiconductor layer before.According to an embodiment of the invention, which carves including dry method
At least one of erosion and wet etching, to remove the natural oxide on nitride semiconductor layer surface.Specifically, dry method is carved
Erosion can be the plasma etching using Ar as source of the gas, and wet etching can be that chloroazotic acid corrodes.When boundary layer uses in-situ deposition
During method formation, then nitride semiconductor layer can not be surface-treated before boundary layer is formed.
S300：First medium layer is set on nitride semiconductor layer
According to an embodiment of the invention, in this step, first medium layer is set on nitride semiconductor layer.According to this
The embodiment of invention, first medium layer are formed by carrying out thermal oxide or hot nitrogen oxidation to boundary layer, interface layer segment
Or it is completely converted into first medium layer.According to a particular embodiment of the invention, sample is put into horizontal Quartz stove tube first, with
Gas is passed through in boiler tube afterwards, high-temperature process, time 0.1-6h are carried out to sample at 600-1000 DEG C.Need what is illustrated
It is that " sample " is the semiconductor structure including nitride semiconductor layer and boundary layer prepared in above-mentioned steps.According to this hair
Bright embodiment, it is related with the thickness of required first medium layer to the time of sample progress high-temperature process, when required first
When the thickness of dielectric layer is larger, the time of its progress high-temperature process is also corresponding longer, and the time of high-temperature process is longer, interface
The oxidation uniformity of layer is higher.According to an embodiment of the invention, when above-mentioned high-temperature process is thermal oxide, oxygen is passed through in boiler tube
Gas, when above-mentioned high-temperature process aoxidizes for hot nitrogen, is passed through oxygen and nitrogen (and/or ammonia), so as to complete pair in boiler tube
The thermal oxide of boundary layer or hot nitrogen oxidation processes, make it partly or entirely be converted into first medium layer.Those skilled in the art's energy
Enough understand, before hot oxygen processing is carried out to boundary layer, also need to clean sample.Specifically, first respectively with third
Ketone, alcohol are cleaned by ultrasonic sample, the organic pollution on surface are removed, followed by 1:10 hydrofluoric acid is to sample surfaces
Natural oxidizing layer carry out cleaning treatment.
According to an embodiment of the invention, first medium layer can be aoxidized and formed by thermal oxide or hot nitrogen by boundary layer
What high K medium was formed.According to a particular embodiment of the invention, which can be Al2O3Or AlOxNy, wherein 0<x<1.5
0≤y<1.Wherein, Al2O3And AlOxNyIt is separately noncrystal or crystal.According to an embodiment of the invention, it is noncrystal
Or the Al of crystal2O3And AlOxNyIt can be realized by the temperature and time of control process technique.Implement according to the present invention
Example, Al2O3Dielectric layer as nitride-based semiconductor has the electric leakage of smaller, and interface quality is also relatively more preferable.Also, heat
The Al of oxygen generation2O3Dielectric constant higher (can reach 12.4), mass ratio deposition generation Al2O3Better quality, compactness
Good, defect is less.In addition, the Al of hot oxygen generation2O3Boundary defect between nitride semiconductor layer is less, better quality.By
This, by Al2O3Or AlOxNyMake dielectric layer, quality and its boundary between nitride semiconductor layer of dielectric layer can be improved
Face quality.
According to an embodiment of the invention, using high resolution TEM (HRTEM), atomic force microscope (AFM) and X
X ray diffraction (XRD) etc. detects the property of first medium layer, and the first medium layer formed using the above method is had
Higher quality.For example, according to a particular embodiment of the invention, AlN can be used as boundary layer, and be converted into by thermal oxide
Al2O3, with Al2O3For the dielectric layer of the semiconductor structure.The dielectric layer formed using the above method can be the Al of amorphous2O3,
Therefore grid leak electricity highly stable and that the device formed using the semiconductor structure can be reduced.The interface state density of the dielectric layer
It is small.Thus, interfacial characteristics is good between first medium layer and semiconductor layer.
S400：On surface of the first medium layer away from nitride semiconductor layer, metal layer is set
According to an embodiment of the invention, in this step, set on surface of the first medium layer away from nitride semiconductor layer
Put metal layer.Material on metal layer is not particularly limited, and those skilled in the art can be set as the case may be
Meter.Thus, it is possible to obtain the metal electrode of semiconductor structure, the use function of semiconductor devices is realized.
According to an embodiment of the invention, before metal layer is set, can also partly be led away from nitride in first medium layer
The surface of body layer sets second dielectric layer, then sets metal on surface of the second dielectric layer away from nitride semiconductor layer again
Layer.According to an embodiment of the invention, second dielectric layer can include Al2O3、SiO2、HfO2、TiO2、ZrO2、La2O3At least it
One.Generation type on second dielectric layer is not particularly limited, and those skilled in the art can carry out as the case may be
Design.For example, according to an embodiment of the invention, second dielectric layer can be by atomic layer deposition, magnetron sputtering or plasma
Body enhancing chemical vapor deposition is formed.Thus, it is possible to obtain second dielectric layer using simple production technology.
As it was previously stated, the thickness of boundary layer can be 1-100nm, in other words, the thickness of the dielectric layer of formation can be
1-100nm.According to an embodiment of the invention, set second dielectric layer on the one hand can do first medium layer thinner, improve
The quality of first medium layer, on the other hand may also reach up the required thickness of dielectric layer while dielectric film quality is improved,
Two-layered medium layer can be with the breakdown voltage of resistance to higher at the same time.For example, according to a particular embodiment of the invention, work as nitride-based semiconductor
For layer when being GaN, there is about 2.5% differences between lattice constant in the epitaxial interface layer AlN on GaN, can only extension than relatively thin
AlN could not produce new misfit dislocation, while the crystal quality of AlN can be very high.Thus, relatively thin first medium layer is not only
It can realize high quality, it can also be ensured that the interface between semiconductor and medium is good.For example, according to an embodiment of the invention,
Can with the AlN layers of extension 5-10nm, the AlN layers of first medium layer that can form 10-20nm, by setting second dielectric layer,
Overall thickness of dielectric layers can be thickeied to 20-100nm.Thus, it is possible to the breakdown voltage of resistance to higher.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to an embodiment of the invention, should be partly
Conductor structure is prepared by previously described method, and thus, which has prepared by previously described method half
The whole features and advantage of conductor structure, details are not described herein.Generally speaking, the dielectric layer of the semiconductor structure has high-quality
The advantages of amount and excellent interface performance.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to an embodiment of the invention, should be partly
Conductor structure can be semiconductor structure prepared by previously described method, and thus the semiconductor structure can have with above retouching
Semiconductor structure prepared by the method stated identical feature and advantage, details are not described herein.According to an embodiment of the invention, join
Fig. 2 is examined, which includes：Nitride semiconductor layer 100, boundary layer 200, first medium layer 300 and metal layer
400.Wherein, boundary layer 200 is arranged on the upper surface of nitride semiconductor layer 100, and boundary layer 200 contains aluminium element, metal layer
400 are arranged on side of the first medium layer 300 away from nitride semiconductor layer 100.According to an embodiment of the invention, first medium
Layer 300 is to be formed by boundary layer 200 by thermal oxide or hot nitrogen oxidation, and at least part of boundary layer 200 is converted into
First medium layer 300.Thus, the dielectric layer of the semiconductor structure has the advantages that high quality and excellent interface performance.According to
The embodiment of the present invention, when boundary layer 200 is partially converted into first medium layer 300, first medium layer 300 is arranged on boundary layer
200 sides away from nitride semiconductor layer 100.When boundary layer 200 is completely converted into first medium layer 300, first medium layer
300 are arranged on the upper surface of nitride semiconductor layer 100.
Below according to the specific embodiment of the present invention, the various pieces of the semiconductor structure are described in detail：
On having been carried out being described in detail before the material of nitride semiconductor layer, details are not described herein.For example, according to
The embodiment of the present invention, nitride semiconductor layer 100 can include GaN crystal, AlN crystal, InN crystal, InmAlnGa1-m-nN
At least one crystal, wherein, 0≤m≤1,0≤n≤1.For example, it may be it is made of the multilayer hetero-structure of above-mentioned Crystallization
Nitride semiconductor layer.Nitride semiconductor layer is formed by above-mentioned Group III-V semiconductor, one side self performance is more excellent,
Available for the semiconductor devices such as the more excellent field-effect transistor of electric property are prepared, on the other hand, what above-mentioned material was formed
Semiconductor layer relatively simple can form the good boundary layer and dielectric layer of interface quality by subsequent step, there is provided be formed
The substrate of dielectric layer.According to an embodiment of the invention, at least a portion of the upper surface of nitride semiconductor layer 100 is nonpolar
Face or semi-polarity face.Thus, it is possible to nitride semiconductor layer upper surface is set to have less charge accumulated, so as to reduce to dielectric layer
Influence.
On have also already been detailed description before the material of boundary layer, details are not described herein.For example, according to the present invention
Embodiment, boundary layer can include at least one of nitride containing Al with amorphous, pseudo-crystal or crystal structure.For example,
According to an embodiment of the invention, the nitride of the Al can be AlN, AlGaN, InAlN etc..Specific implementation according to the present invention
Example, boundary layer can be AlN.By carrying out hot oxygen processing to boundary layer, high quality, the medium of excellent interface characteristic can be obtained
Layer.According to an embodiment of the invention, the thickness of boundary layer can be 1-100nm.Thus, it is possible to energy is worn in the resistance for improving dielectric layer
Power.
On having been carried out being described in detail before the material and property of first medium layer, details are not described herein.For example,
According to an embodiment of the invention, first medium layer can aoxidize the high K medium formed by thermal oxide or hot nitrogen by boundary layer
Formed.According to a particular embodiment of the invention, which can be Al2O3Or AlOxNy, wherein 0<x<1.5,0≤y<1.
Wherein, Al2O3And AlOxNyIt is separately noncrystal or crystal.According to an embodiment of the invention, Al2O3As nitride
The dielectric layer of semiconductor has the electric leakage of smaller, and interface quality is also relatively more preferable.Also, the Al of hot oxygen generation2O3Dielectric
Constant higher (can reach 12.4), the Al of mass ratio deposition generation2O3Better quality, compactness is good, and defect is less.It is in addition, hot
The Al of oxygen generation2O3Boundary defect between nitride semiconductor layer is less, better quality.Thus, by Al2O3Or AlOxNyMake
Dielectric layer, can improve the quality and its interface quality between nitride semiconductor layer of dielectric layer.
According to an embodiment of the invention, basalis 500, basalis 500 can also be included with reference to figure 3, the semiconductor structure
It is arranged on the lower surface of nitride semiconductor layer 100.On having been carried out being described in detail before the material of basalis, herein not
Repeat again.For example, according to an embodiment of the invention, basalis 500 can include Si, SiC, AlN, sapphire and GaN extremely
It is one of few.Thus, it is possible to form basalis using the above-mentioned material derived from a wealth of sources.
According to an embodiment of the invention, which can also include second dielectric layer 600, second dielectric layer 600
It is arranged between first medium layer 300 and metal layer 400.Thus, it is possible to higher-quality first medium layer is obtained, at the same it is double
Layer dielectric layer can be with the breakdown voltage of resistance to higher.On having been carried out being described in detail before the material of second dielectric layer, herein
Repeat no more.For example, according to an embodiment of the invention, second dielectric layer 600 can include Al2O3、SiO2、HfO2、TiO2、
ZrO2、La2O3At least one of.Thus, it is possible to form second dielectric layer using the above-mentioned material derived from a wealth of sources.
In another aspect of this invention, the present invention proposes a kind of field-effect transistor.According to an embodiment of the invention, should
Field-effect transistor includes foregoing semiconductor structure.Thus, which has previously described semiconductor
The whole features and advantage of structure, details are not described herein.Generally speaking, the performance of device can be improved.
Embodiment 1
AlN boundary layers are formed using the method for sputtering in non-polar GaN substrate, by carrying out hot oxygen to AlN boundary layers
Processing, makes AlN boundary layers be partially converted into Al2O3Dielectric layer.The temperature of wherein hot oxygen processing is 800 DEG C, processing time 6h.
The sample after hot oxygen is characterized by high resolution TEM, observes the Al after hot oxygen2O3Thickness, knot
Brilliant degree, uniformity and its interface with boundary layer.The Al of hot oxide growth at 800 DEG C2O3For non crystalline structure, and Al2O3With
The interface of boundary layer AlN is clear.Continue the Al to hot oxide growth at 800 DEG C2O3Carry out atomic force microscope observation, test surfaces
Roughness, obtained amorphous Al2O3Roughness it is suitable with the roughness of AlN, i.e. thermal oxide will not increase surface roughness.
The Al after hot oxygen can be characterized by X-ray diffraction2O3Crystal orientation existence form, and Al in order to obtain2O3Stabilization
Existence form, only changes the heating-up temperature in above-mentioned parameter, AlN boundary layers is carried out thermal oxidation at 1000 DEG C, pass through X
The Al that x ray diffraction observation is formed in 1000 DEG C of hot oxygen2O3X ray diffracting spectrum, peak position is determined as at 37.8 ° and 43.3 °
α-Al2O3。
By the sample making after oxidation into capacitor element, progress capacitance-voltage (C-V) test can according to C-V test results
To calculate interface state density, interface state density is less than 1011cm-2eV-1, it might even be possible to less than 5 × 1010cm-2eV-1, interfacial state
Density is very low, and with ALD methods directly in GaN surfaces depositing Al2O3Obtained interface state density is 1012cm-2eV-1More than.Cause
This, the Al that thermal oxide obtains2O3It is fine with the interface quality of semiconductor.Thus, interface is special between first medium layer and semiconductor layer
Property is good.
In the description of this specification, the description of reference term " one embodiment ", " another embodiment " etc. means to tie
The embodiment particular features, structures, materials, or characteristics described are closed to be contained at least one embodiment of the present invention.At this
In specification, a schematic expression of the above terms does not necessarily refer to the same embodiment or example.Moreover, the tool of description
Body characteristics, structure, material or feature may be combined in any suitable manner in any one or more of the embodiments or examples.This
Outside, without conflicting with each other, those skilled in the art by the different embodiments described in this specification or can show
Example and different embodiments or exemplary feature are combined and combine.
Although the embodiment of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (25)
- A kind of 1. method for preparing semiconductor structure, it is characterised in that including：Nitride semiconductor layer is provided；Boundary layer is set in the upper surface of the nitride semiconductor layer, the boundary layer contains aluminium element；First medium layer is set on the nitride semiconductor layer, and the first medium layer is by being carried out to the boundary layer What thermal oxide or hot nitrogen were aoxidized and formed, the boundary layer is at least partly converted into the first medium layer；AndOn surface of the first medium layer away from the nitride semiconductor layer, metal layer is set.
- 2. according to the method described in claim 1, it is characterized in that, the nitride semiconductor layer is set on the base layer.
- 3. according to the method described in claim 2, it is characterized in that, the basalis includes semi-conducting material and insulating materials At least one of,Optionally, the basalis includes at least one of Si, SiC, AlN, sapphire and GaN.
- 4. according to the method described in claim 1, it is characterized in that, at least one of the upper surface of the nitride semiconductor layer It is divided into non-polar plane or semi-polarity face.
- 5. according to the method described in claim 1, it is characterized in that, the nitride semiconductor layer includes GaN crystal, AlN crystalline substances Body, InN crystal, InmAlnGa1-m-nAt least one of N crystal, wherein, 0≤m≤1,0≤n≤1.
- 6. according to the method described in claim 1, it is characterized in that, the boundary layer includes having amorphous, pseudo-crystal or crystal knot At least one of nitride containing Al of structure,The first medium layer is to be aoxidized the high K medium formed by the thermal oxide or hot nitrogen by the boundary layer and formed.
- 7. according to the method described in claim 6, it is characterized in that, the boundary layer is AlN, the thickness of the boundary layer is 1- 100nm。
- 8. according to the method described in claim 6, it is characterized in that, the high K medium is Al2O3Or AlOxNy, wherein 0<x< 1.5,0≤y<1.
- 9. according to the method described in claim 1, it is characterized in that, the temperature of the thermal oxide or hot nitrogen oxidation is 600- 1000℃。
- 10. according to the method described in claim 1, it is characterized in that, before the metal layer is set, in the first medium Surface of the layer away from the nitride semiconductor layer further sets second dielectric layer,On surface of the second dielectric layer away from the nitride semiconductor layer, the metal layer is set.
- 11. according to the method described in claim 10, it is characterized in that, the second dielectric layer is by atomic layer deposition, magnetic What control sputtering or plasma enhanced chemical vapor deposition were formed,Optionally, the second dielectric layer includes Al2O3、SiO2、HfO2、TiO2、ZrO2、La2O3At least one of.
- 12. according to the method described in claim 2, it is characterized in that, the boundary layer be on the basalis set described in Formed during nitride semiconductor layer using in-situ deposition technology.
- 13. according to the method described in claim 1, it is characterized in that, the boundary layer is to pass through metal-organic chemical vapor What deposition, atomic layer deposition, magnetron sputtering or plasma enhanced chemical vapor deposition were formed.
- 14. a kind of semiconductor structure, it is characterised in that the semiconductor structure is by claim 1-13 any one of them sides Prepared by method.
- A kind of 15. semiconductor structure, it is characterised in that including：Nitride semiconductor layer；Boundary layer, the boundary layer are arranged on the upper surface of the nitride semiconductor layer, and the boundary layer contains aluminium element；First medium layer, the first medium layer is to be formed by the boundary layer by thermal oxide or hot nitrogen oxidation, described Boundary layer is at least partly converted into the first medium layer；AndMetal layer, the metal layer are arranged on the side of the first medium layer away from the nitride semiconductor layer.
- 16. semiconductor structure according to claim 15, it is characterised in that further comprise：Basalis, the basalis It is arranged on the nitride semiconductor layer lower surface.
- 17. semiconductor structure according to claim 16, it is characterised in that the basalis includes Si, SiC, AlN, indigo plant At least one of jewel and GaN.
- 18. semiconductor structure according to claim 15, it is characterised in that the nitride semiconductor layer upper surface is extremely A few part is non-polar plane or semi-polarity face.
- 19. semiconductor structure according to claim 15, it is characterised in that it is brilliant that the nitride semiconductor layer includes GaN Body, AlN crystal, InN crystal, InmAlnGa1-m-nAt least one of N crystal, wherein, 0≤m≤1,0≤n≤1.
- 20. semiconductor structure according to claim 15, it is characterised in that the boundary layer include with amorphous, pseudo-crystal, Or at least one of nitride containing Al of crystal structure, the first medium layer are formed for high K medium.
- 21. semiconductor structure according to claim 20, it is characterised in that the boundary layer is formed by AlN, described The thickness of boundary layer is 1-100nm.
- 22. semiconductor structure according to claim 20, it is characterised in that the high K medium is Al2O3Or AlOxNy, its In 0<x<1.5,0≤y<1.
- 23. semiconductor structure according to claim 15, it is characterised in that further comprise：Second dielectric layer, described Second medium layer is arranged between the first medium layer and the metal layer.
- 24. semiconductor structure according to claim 23, it is characterised in that the second dielectric layer includes Al2O3、SiO2、 HfO2、TiO2、ZrO2、La2O3At least one of.
- 25. a kind of field-effect transistor, it is characterised in that including claim 15~24 any one of them semiconductor structure.
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