CN108011010A - A kind of LED encapsulation method - Google Patents
A kind of LED encapsulation method Download PDFInfo
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- CN108011010A CN108011010A CN201711215135.XA CN201711215135A CN108011010A CN 108011010 A CN108011010 A CN 108011010A CN 201711215135 A CN201711215135 A CN 201711215135A CN 108011010 A CN108011010 A CN 108011010A
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- hemispherical lens
- hemispherical
- led
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 183
- 239000000741 silica gel Substances 0.000 claims abstract description 166
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 166
- 239000000843 powder Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229960001866 silicon dioxide Drugs 0.000 claims 25
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000499 gel Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010023126 Jaundice Diseases 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Classifications
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- H01L33/48—
-
- H01L33/507—
-
- H01L33/56—
-
- H01L33/58—
-
- H01L2933/0033—
-
- H01L2933/0041—
-
- H01L2933/005—
-
- H01L2933/0058—
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation method, wherein, including, prepare heat-radiating substrate (21)；Prepare LED chip, and the LED chip is fixed on the heat-radiating substrate (21)；The first layer of silica gel (22) is formed in the upper surface of the LED chip；Hemispherical lens layer (23) is formed in the upper surface of first layer of silica gel (22), the hemispherical lens layer (23) includes multiple hemispherical lens；The second layer of silica gel (24) is formed above the hemispherical lens layer (23) and first layer of silica gel (22), second layer of silica gel (24) contains fluorescent powder；By include first layer of silica gel (22), the hemispherical lens layer (23) and second layer of silica gel (24) LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.The embodiment of the present invention between the first layer of silica gel and the second layer of silica gel by setting hemispherical lens layer, and fluorescent powder is set in the second layer of silica gel, so that light beam is more concentrated and irradiated uniformly, and avoid fluorescent powder and directly contacted with LED chip, improve efficiency of light extraction.
Description
Technical field
The invention belongs to photoelectric device technical field, and in particular to a kind of LED encapsulation method.
Background technology
Light emitting diode (Light Emitting Diode, LED) is a kind of can to convert electrical energy into consolidating for visible ray
The semiconductor devices of state, it is widely used in display screen, traffic signal, display light source, lamps for vehicle, LED backlight, illumination
The fields such as light source.
But those skilled in the art are in practical applications, it is found that the prior art at least has the following technical problems：
1st, since the light that LED light source is sent generally is distributed in divergence expression, cause illumination not concentrated, carried out by outer lens
Secondary reshaping, then add production cost；
2nd, fluorescent powder is usually and is directly coated with the chip surface, and the high temperature that LED chip produces reduces fluorescent powder
Quantum efficiency, in addition, chip has absorption to the light of fluorescent powder retroeflection, reduces the efficiency of light extraction of encapsulating structure；
3rd, since encapsulating structure is to the barrier effect of light, illumination is caused full illumination to go out from encapsulating structure, light
It is relatively low according to transmitance.
Therefore, it is current hot research direction to develop the encapsulation technology that a kind of efficiency of light extraction is high, illumination effect is good.
The content of the invention
For the problem present on, the present invention proposes a kind of new LED encapsulation method, and specific embodiment is such as
Under.
Specifically, the embodiment of the present invention provides a kind of LED encapsulation method, wherein, including,
Step 1, prepare heat-radiating substrate 21；
Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate 21；
Step 3, the LED chip upper surface formed the first layer of silica gel 22；
Step 4, in the upper surface of first layer of silica gel 22 form hemispherical lens layer 23, the hemispherical lens layer 23
Including multiple hemispherical lens；
Step 5, second layer of silica gel 24 that formed above the hemispherical lens layer 23 and first layer of silica gel 22, it is described
Second layer of silica gel 24 contains fluorescent powder；
Step 6, by including first layer of silica gel 22, the hemispherical lens layer 23 and second layer of silica gel 24
LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
In one embodiment of the invention, the LED chip is aluminum gallium nitride ultraviolet chip, and the fluorescent powder is red
Color, green and blue three kinds of fluorescent powders mix.
In one embodiment of the invention, step 3 includes：
Step 31, the LED chip upper surface coat the first silica gel；
Step 32, bake at the beginning of carrying out first to first silica gel, and to form first layer of silica gel 22, described first is just roasting
Temperature is 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, step 4 includes：
Step 41, form multiple semispherical silicon glueballs using the first hemispherical, and by the multiple half with mould
Spherical silica gel ball is placed in first layer of silica gel 22；
Step 42, carry out the multiple semispherical silicon glueballs the second just roasting, demoulding and polishing, to form hemispherical lens
Layer 23, described second just bakes temperature as 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, step 5 includes：
Step 51, coat the 3rd silica gel above the hemispherical lens layer 23 and first layer of silica gel 22；
Step 52, using the second hemispherical form arc or hemispherical by the upper surface of the 3rd silica gel；
Step 53, carry out the 3rd silica gel the 3rd just roasting, demoulding and polishing, to form second layer of silica gel 24,
Described 3rd just bakes temperature as 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, before step 3, further include：
Step X1, it is respectively provided for preparing the silica gel material of first layer of silica gel 22 and the hemispherical lens layer 23
Material so that the refractive index of first layer of silica gel 22 is less than the refractive index of the hemispherical lens layer 23；
Step X2, it is configured to prepare the silica gel material containing the fluorescent powder of second layer of silica gel 24 so that institute
The refractive index for stating the second layer of silica gel 24 is less than the refractive index of the hemispherical lens layer 23, and more than first layer of silica gel 22
Refractive index.
In one embodiment of the invention, step 1 includes
Step 11, choose the heat-radiating substrate 21；
Step 12, the cleaning heat-radiating substrate 21；
Step 13, dry the heat-radiating substrate 21.
In one embodiment of the invention, a diameter of 10-200 of the hemispherical lens on the hemispherical lens layer 23
Micron, and multiple hemispherical lens uniform intervals arrangements, spacing is 10-200 microns.
In one embodiment of the invention, multiple hemispherical lens are rectangular arranges or is staggered.
In one embodiment of the invention, first layer of silica gel 22 is high temperature resistant silicon glue-line.
Beneficial effects of the present invention are：
1st, using variety classes silica gel it is different with phosphor gel refractive index the characteristics of, in the first layer of silica gel and the second layer of silica gel
Between set hemispherical lens layer, improve LED chip and shine the problem of scattered, the light that light source is sent more is concentrated.
2nd, it is of the invention by not adding fluorescent powder in the first layer of silica gel and hemispherical lens layer, and in the second layer of silica gel
Fluorescent powder is added, fluorescent powder is isolated with LED chip, the quantum efficiency for solving caused fluorescent powder under the high temperature conditions declines
The problem of.
3rd, the present invention is by mixing red, green and blue colour fluorescent powder, and the fluorescent powder of different ratio is by ultraviolet
The irradiation of wick can send the light of different colours, can become random color according to use demand, furthermore it is also possible to adjust
The colour temperature of light source.
4th, the first layer of silica gel contacted with LED chip is heat safe silica gel, is solved caused by silica gel aging jaundice thoroughly
The problem of light rate declines.
5th, in the present invention, the refractive index of hemispherical lens layer is more than the refractive index of upper and lower two layers of layer of silica gel, and the first silica gel
The refractive index of layer is less than the refractive index of the second layer of silica gel, so can be to avoid total reflection so that the light that LED chip is sent can be more
More shines out through encapsulating material.
Brief description of the drawings
Fig. 1 is the flow chart of LED encapsulation method provided in an embodiment of the present invention；
Fig. 2 is the structure diagram of the LED chip in LED encapsulation method provided in an embodiment of the present invention；
Fig. 3 is the detailed process schematic diagram of LED encapsulation method provided in an embodiment of the present invention；
Fig. 4 is the structure diagram of the LED encapsulation structure prepared using LED encapsulation method provided in an embodiment of the present invention；
Fig. 5 A, Fig. 5 B are the arrangement schematic diagram of multiple hemispherical lens provided in an embodiment of the present invention.
Embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Embodiment one
The embodiment of the present invention provides a kind of LED encapsulation method, wherein, including,
Step 1, prepare heat-radiating substrate 21；
Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate 21；
Step 3, the LED chip upper surface formed the first layer of silica gel 22；
Step 4, in the upper surface of first layer of silica gel 22 form hemispherical lens layer 23, the hemispherical lens layer 23
Including multiple hemispherical lens；
Step 5, second layer of silica gel 24 that formed above the hemispherical lens layer 23 and first layer of silica gel 22, it is described
Second layer of silica gel 24 contains fluorescent powder；
Step 6, by including first layer of silica gel 22, the hemispherical lens layer 23 and second layer of silica gel 24
LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
Further, the LED chip is aluminum gallium nitride ultraviolet chip, and the fluorescent powder is red, green and blueness three
Kind fluorescent powder mixes.
Further, step 3 includes：
Step 31, the LED chip upper surface coat the first silica gel；
Step 32, bake at the beginning of carrying out first to first silica gel, and to form first layer of silica gel 22, described first is just roasting
Temperature is 90-125 °, and the time is 15-60 minutes.
Further, step 4 includes：
Step 41, form multiple semispherical silicon glueballs using the first hemispherical, and by the multiple half with mould
Spherical silica gel ball is placed in first layer of silica gel 22；
Step 42, carry out the multiple semispherical silicon glueballs the second just roasting, demoulding and polishing, to form hemispherical lens
Layer 23, described second just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Further, step 5 includes：
Step 51, coat the 3rd silica gel above the hemispherical lens layer 23 and first layer of silica gel 22；
Step 52, using the second hemispherical form arc or hemispherical by the upper surface of the 3rd silica gel；
Step 53, carry out the 3rd silica gel the 3rd just roasting, demoulding and polishing, to form second layer of silica gel 24,
Described 3rd just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Further, before step 3, further include：
Step X1, it is respectively provided for preparing the silica gel material of first layer of silica gel 22 and the hemispherical lens layer 23
Material so that the refractive index of first layer of silica gel 22 is less than the refractive index of the hemispherical lens layer 23；
Step X2, it is configured to prepare the silica gel material containing the fluorescent powder of second layer of silica gel 24 so that institute
The refractive index for stating the second layer of silica gel 24 is less than the refractive index of the hemispherical lens layer 23, and more than first layer of silica gel 22
Refractive index.
Further, step 1 includes
Step 11, choose the heat-radiating substrate 21；
Step 12, the cleaning heat-radiating substrate 21；
Step 13, dry the heat-radiating substrate 21.
Further, a diameter of 10-200 microns of the hemispherical lens on the hemispherical lens layer 23, and multiple institutes
The arrangement of hemispherical lens uniform intervals is stated, spacing is 10-200 microns.
Further, multiple hemispherical lens are rectangular arranges or is staggered.
Further, first layer of silica gel 22 is high temperature resistant silicon glue-line.
Beneficial effects of the present invention are：
1st, using variety classes silica gel it is different with phosphor gel refractive index the characteristics of, in the first layer of silica gel and the second layer of silica gel
Between set hemispherical lens layer, improve LED chip and shine the problem of scattered, the light that light source is sent more is concentrated.
2nd, the present invention in the first layer of silica gel and hemispherical lens layer by not containing fluorescent powder, and contains in the second layer of silica gel
There is fluorescent powder, fluorescent powder is isolated with LED chip, solve the quantum efficiency decline of caused fluorescent powder under the high temperature conditions
Problem.
3rd, the present invention is by mixing red, green and blue colour fluorescent powder, and the fluorescent powder of different ratio is by ultraviolet
The irradiation of wick can send the light of different colours, can become random color according to use demand, furthermore it is also possible to adjust
The colour temperature of light source.
4th, the first layer of silica gel contacted with LED chip is heat safe silica gel, is solved caused by silica gel aging jaundice thoroughly
The problem of light rate declines.
5th, in the present invention, the refractive index of hemispherical lens layer is more than the refractive index of upper and lower two layers of layer of silica gel, and the first silica gel
The refractive index of layer is less than the refractive index of the second layer of silica gel, so can be to avoid total reflection so that the light that LED chip is sent can be more
More shines out through encapsulating material.
Embodiment two
Please refer to Fig.1, Fig. 1 is the flow chart of LED encapsulation method provided in an embodiment of the present invention；Wherein, in above-mentioned implementation
On the basis of example, describe in detail in more detail to LED encapsulation method provided in an embodiment of the present invention, specific steps are such as
Under：
Step 1, prepare heat-radiating substrate 21；
Step 11, choose the heat-radiating substrate 21；
Specifically, it be 0.5~10mm to choose thickness D, material for solid iron plate heat-radiating substrate 21, and by heat-radiating substrate 21
Required size is cut into, the width W of substrate cuts according to actual demand, is not limited herein.
Step 12, the cleaning heat-radiating substrate 21；
Specifically, the spot on heat-radiating substrate 21, especially oil stain are cleaned up；
Step 13, dry the heat-radiating substrate 21；
Specifically, the heat-radiating substrate 21 that baking cleaning is completed, the drying of holding heat-radiating substrate 21；
It should be noted that in LED encapsulation method provided in an embodiment of the present invention, it is also necessary to be fixed on heat-radiating substrate 21
On stent, the processing method to stent is identical with the processing method to substrate, it is cleaned and is dried.
Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate 21；
Specifically, in the embodiment of the present invention, LED chip is aluminum gallium nitride ultraviolet chip (AlGaN), as shown in Fig. 2, Fig. 2
For the structure diagram of the LED chip in LED encapsulation method provided in an embodiment of the present invention；Wherein, ultraviolet wick structure includes：
Layer 1 is substrate material, and layer 2 is N-type AlGaN layer, and layer 3 is mqw layer, and layer 4 is AlxGaN1-xN/AlyGaN1-yN layers (wherein, 0.5>x
>Y), layer 5 is p-type AlGaN layer, and layer 6 is p-type GaN layer, and layer 7 is p-type contact, and layer 8 is the N-type contact being arranged on layer 2；The nitrogen
Change the thickness of gallium aluminium ultraviolet chip between 90 microns -140 microns.Specifically,
LED chip draws two contact conductors from p-type contact and N-type contact, respectively by contact conductor using reflux welder
Skill is welded in the wire casing of heat-radiating substrate 21, and LED chip is fixed on heat-radiating substrate 21, is needed after the completion of welding to bonding wire
Checked, if qualified, into lower step process, if unqualified, re-start welding.
As shown in figure 3, Fig. 3 is the detailed process schematic diagram of LED encapsulation method provided in an embodiment of the present invention；In step 3
Before, further include：
Step X1, it is respectively provided for preparing the silica gel material of first layer of silica gel 22 and the hemispherical lens layer 23
Material；
Specifically, not containing fluorescent powder in the first layer of silica gel 22 and hemispherical lens layer 23, the first layer of silica gel is used to prepare
22 raw material is high temperature resistant silica gel, and the material for preparing hemispherical lens layer 23 can be by polycarbonate, poly-methyl methacrylate
Fat and glass mix, different according to raw material proportioning, and the different silica gel material of refractive index, the embodiment of the present invention can be made
In, the refractive index of the first layer of silica gel 22 is less than the refractive index of hemispherical lens layer 23.
Step X2, it is configured to prepare the silica gel material containing the fluorescent powder of second layer of silica gel 24；
Specifically, the LED chip based on the application is aluminum gallium nitride ultraviolet chip, therefore above-mentioned fluorescent powder is red fluorescence
What powder, green emitting phosphor and blue colour fluorescent powder mixed, be used to prepare the raw material of the second layer of silica gel 24 for methyl silicone rubber and
The high-index materials such as phenyl high index of refraction organic silicon rubber mix, it is preferred that in the embodiment of the present invention, red fluorescence powder
For Y2O2S:Eu3+, green emitting phosphor BaMgAl10O17:Eu2+,Mn2+, blue colour fluorescent powder Sr5(PO4)3Cl:Eu2+, wherein, it is red
The wavelength of color fluorescent powder is 626nm, and the wavelength of green emitting phosphor is 515nm, and the wavelength of blue colour fluorescent powder is 447nm, works as silica gel
, it is necessary to carry out color measurement to mixed silica gel material after material and three-color phosphor mixing so that the purple that LED chip is sent
When outer light irradiation is on three kinds of fluorescent powders, the photochromic of excitation is mixed to form white light or other coloured light, specifically can basis
The proportioning of three-color phosphor is different and different, and the embodiment of the present invention is not limited this.
In addition, in the embodiment of the present invention, using variety classes silica gel it is different with phosphor gel refractive index the characteristics of, according to tune
The difference of proportioning so that the refractive index of second layer of silica gel 24 is less than the refractive index of the hemispherical lens layer 23, and is more than
The refractive index of first layer of silica gel 22.
In the embodiment of the present invention, the refractive index of hemispherical lens layer 23 is maximum, and the refractive index of remaining two layers of layer of silica gel is under
It is sequentially increased upwards, this kind of set-up mode can preferably suppress total reflection, it is necessary to explanation, the refraction of the second layer of silica gel 24
Rate is the smaller the better, forms larger refringence to avoid between the second layer of silica gel 24 and outside air, causes to be totally reflected, this hair
In bright embodiment, the refractive index of the second layer of silica gel 24 is no more than 1.5, to make light maximumlly shine out, avoids being totally reflected
So that light, which is packaged structure and absorbs, is changed into heat, efficiency of light extraction is improved.
Step 3, the LED chip upper surface formed the first layer of silica gel 22；As shown in figures 1 and 3, specifically include as
Lower content：
Step 31, the LED chip upper surface coat the first silica gel；
Step 32, bake at the beginning of carrying out first to first silica gel, and to form first layer of silica gel 22, described first is just roasting
Temperature is 90-125 °, and the time is 15-60 minutes.
Specifically, in the embodiment of the present invention, plane is made in the upper surface of the first lens jacket, in favor of being formed on hemisphere
Shape lens jacket 23, and during due to LED operation, amount of heat can be discharged, therefore prepare the silica gel material of the first lens jacket 22
For high temperature resistant silica gel.
Step 4, in the upper surface of first layer of silica gel 22 form hemispherical lens layer 23, the hemispherical lens layer 23
Including multiple hemispherical lens；As shown in figure 3, specifically include following content：
Step 41, form multiple semispherical silicon glueballs using the first hemispherical, and by the multiple half with mould
Spherical silica gel ball is placed in first layer of silica gel 22；
Step 42, carry out the multiple semispherical silicon glueballs the second just roasting, demoulding and polishing, to form hemispherical lens
Layer 23, described second just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Specifically, in the embodiment of the present invention, multiple semispherical silicon glueballs are formed first with hemispherical, adjacent two
Connected between a semispherical silicon glueballs by silica gel strip, then remove the lower mould of hemispherical, by multiple hemispherical silica gel
Ball is placed in the first layer of silica gel 22 together with upper die, and second is then carried out to it and is just baked, and treats that semispherical silicon glueballs cures
Afterwards, then by upper die remove, polish to form the smooth hemispherical lens in surface.The embodiment of the present invention passes through in the first silica gel
Hemispherical lens layer 23 is set between 22 and second layer of silica gel 24 of layer, improves the light-gathering of LED chip, the light for sending light source
Can more it concentrate.
It should be noted that in the embodiment of the present invention, the diameter 2R of hemispherical lens is 10-200 microns, and multiple half
Sphere lens uniform intervals arrange, and have spacing A between adjacent two hemispherical lens, spacing A is the smaller the better, between 10-
Between 200 microns.
In the embodiment of the present invention, the arrangement mode of multiple hemispherical lens on hemispherical lens layer 23 has also carried out suitably
Limit, to reach preferable spotlight effect.As shown in Figure 5A, the rectangular arrangement of multiple hemispherical lens, or such as Fig. 5 B institutes
Show, multiple hemispherical lens are staggered.
Step 5, second layer of silica gel 24 that formed above the hemispherical lens layer 23 and first layer of silica gel 22, it is described
Second layer of silica gel 24 contains fluorescent powder；Specifically, as shown in figure 3, include content in detailed below：
Step 51, coat the 3rd silica gel above the hemispherical lens layer 23 and first layer of silica gel 22；
Step 52, using the second hemispherical form arc or hemispherical by the upper surface of the 3rd silica gel；
Step 53, carry out the 3rd silica gel the 3rd just roasting, demoulding and polishing, to form second layer of silica gel 24,
Described 3rd just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Specifically, the second layer of silica gel 24 fills up the gap between multiple hemispherical lens on hemispherical lens layer 23, and
Hemispherical lens layer 23 is completely covered.
It should be noted that multiple hemispherical lens on hemispherical lens layer 23 are " planoconvex lens ", its focal length f=R/
(n2-n1), wherein, n2 is the refractive index of hemispherical lens layer 23, and n1 takes the refraction of the first layer of silica gel 22 and the second layer of silica gel 24
The average (in the embodiment of the present invention hemispherical lens layer about 23 two layers of silica gel refractive index close) of rate, R is hemispherical lens layer
23 radius.
In order to ensure that light is to gather state after lens outgoing, without dissipating, in the embodiment of the present invention, the second layer of silica gel
24 height for being higher by 23 top surface of hemispherical lens layer should be within 2 times of focal lengths, namely to be higher by hemispherical saturating for the second layer of silica gel 24
The distance of 23 top surface of mirror layer is no more than 2R/ (n2-n1), and in practical applications, the thickness of the second layer of silica gel 24 is generally higher by spherical
50-500 microns of 23 top surface of lens.
In addition, in the embodiment of the present invention, the upper surface of the second layer of silica gel 24 is set to arc or hemispherical,
Wherein, hemispherical beam angle is maximum, is suitable for general lighting application；Arc beam angle is smaller, is suitable for local photograph
Bright application or guidance lighting.Therefore, specific shape can be selected according to products application place, to reach best use
Effect, is set by this kind, and the upper surface of the second layer of silica gel 24 forms big lens, can be to being irradiated from aluminum gallium nitride ultraviolet chip
Light out carries out shaping, solves the problems, such as that illumination diverging is not concentrated, therefore LED encapsulation method provided in an embodiment of the present invention
The LED encapsulation structure of preparation, it is not necessary to increase outer lens and shaping is carried out to light beam, reduce production cost.
Step 6, by including first layer of silica gel 22, the hemispherical lens layer 23 and second layer of silica gel 24
LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
Specifically, long roasting baking temperature is 100~150 DEG C, baking time is 4~12h, to eliminate LED encapsulation structure
Internal stress.
LED encapsulation structure after the completion of being prepared according to the above method is as shown in figure 4, Fig. 4 is to be carried using the embodiment of the present invention
The structure diagram of LED encapsulation structure prepared by the LED encapsulation method of confession；Specifically, heat-radiating substrate 21 is solid iron substrate, dissipate
Between 0.5-10mm, the width W of heat-radiating substrate 21 is cut the thickness D of hot substrate 21 according to the size of LED chip,
This is not limited, and iron substrate thermal capacitance is big, and thermal diffusivity is good, and is not easy temperature distortion, more preferable to the heat dissipation effect of LED chip.The
One layer of silica gel 22, does not contain fluorescent powder, and is formed by high temperature resistant silica gel, and it is saturating to form hemispherical in the upper surface of the first layer of silica gel 22
Mirror layer 23, wherein, the radius of each hemispherical lens on hemispherical lens layer 23 is R, between two neighboring hemispherical lens
Away from for A, the silica gel strip formed between adjacent two hemispherical lens by the second layer of silica gel 24 connects, hemispherical lens layer 23
The distance of top surface to the upper surface of the second layer of silica gel 24 be L, its specific scope is between 0-2R/ (n2-n1)；It is of the invention real
Apply in example, the upper surface of the second layer of silica gel 24 is arc or hemispherical, a larger lens is formd, to be carried out to light beam
Secondary reshaping, and increase outer lens are avoided, therefore reduce production cost.
After completing encapsulation, the embodiment of the present invention generally further includes test, the LED that go-no-go encapsulation is completed and to Package Testing
Qualified LED encapsulation structure, in order to carry out subsequent applications.
In conclusion specific case used herein is to a kind of reality of LED encapsulation method provided in an embodiment of the present invention
The mode of applying is set forth, and the explanation of above example is only intended to help to understand method and its core concept of the invention；Together
When, for those of ordinary skill in the art, according to the thought of the present invention, have in specific embodiments and applications
Change part, in conclusion this specification content should not be construed as limiting the invention, protection scope of the present invention should be with institute
Subject to attached claim.
Claims (10)
- A kind of 1. LED encapsulation method, it is characterised in that including,Step 1, prepare heat-radiating substrate (21)；Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate (21)；Step 3, the LED chip upper surface formed the first layer of silica gel (22)；Step 4, first layer of silica gel (22) upper surface formed hemispherical lens layer (23), the hemispherical lens layer (23) multiple hemispherical lens are included；Step 5, form the second layer of silica gel (24), institute above the hemispherical lens layer (23) and first layer of silica gel (22) State the second layer of silica gel (24) and contain fluorescent powder；Step 6, will include first layer of silica gel (22), the hemispherical lens layer (23) and second layer of silica gel (24) LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
- 2. LED encapsulation method according to claim 1, it is characterised in that the LED chip is the ultraviolet core of aluminum gallium nitride Piece, the fluorescent powder mix for red, green and blue three kinds of fluorescent powders.
- 3. LED encapsulation method according to claim 2, it is characterised in that step 3 includes：Step 31, the LED chip upper surface coat the first silica gel；Step 32, bake at the beginning of carrying out first to first silica gel, and to form first layer of silica gel (22), described first just bakes temperature Spend for 90-125 °, the time is 15-60 minutes.
- 4. LED encapsulation method according to claim 2, it is characterised in that step 4 includes：Step 41, form multiple semispherical silicon glueballs using the first hemispherical, and by the multiple hemispherical with mould Silica-gel sphere is placed on first layer of silica gel (22)；Step 42, carry out the multiple semispherical silicon glueballs the second just roasting, demoulding and polishing, to form hemispherical lens layer (23), described second temperature is just baked as 90-125 °, the time is 15-60 minutes.
- 5. LED encapsulation method according to claim 2, it is characterised in that step 5 includes：Step 51, the 3rd silica gel of coating above the hemispherical lens layer (23) and first layer of silica gel (22)；Step 52, using the second hemispherical form arc or hemispherical by the upper surface of the 3rd silica gel；Step 53, carry out the 3rd silica gel the 3rd just roasting, demoulding and polishing, to form second layer of silica gel (24), institute It is 90-125 ° to state the 3rd and just bake temperature, and the time is 15-60 minutes.
- 6. LED encapsulation method according to claim 2, it is characterised in that before step 3, further include：Step X1, it is respectively provided for preparing the silica gel material of first layer of silica gel (22) and the hemispherical lens layer (23) Material so that the refractive index of first layer of silica gel (22) is less than the refractive index of the hemispherical lens layer (23)；Step X2, it is configured to prepare the silica gel material containing the fluorescent powder of second layer of silica gel (24) so that described The refractive index of second layer of silica gel (24) is less than the refractive index of the hemispherical lens layer (23), and is more than first layer of silica gel (22) refractive index.
- 7. LED encapsulation method according to claim 1, it is characterised in that step 1 includes：Step 11, choose the heat-radiating substrate (21)；Step 12, the cleaning heat-radiating substrate (21)；Step 13, by the heat-radiating substrate (21) dry.
- 8. LED encapsulation method according to claim 1, it is characterised in that the hemisphere on the hemispherical lens layer (23) A diameter of 10-200 microns of shape lens, and multiple hemispherical lens uniform intervals arrangements, spacing is 10-200 microns.
- 9. LED encapsulation method according to claim 1, it is characterised in that multiple rectangular arrangements of hemispherical lens Or it is staggered.
- 10. LED encapsulation method according to claim 1, it is characterised in that first layer of silica gel (22) is high temperature resistant silicon Glue-line.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN105789406A (en) * | 2014-12-26 | 2016-07-20 | 司红康 | LED packaging structure |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN105789406A (en) * | 2014-12-26 | 2016-07-20 | 司红康 | LED packaging structure |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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