CN107994110A - A kind of LED encapsulation structure - Google Patents
A kind of LED encapsulation structure Download PDFInfo
- Publication number
- CN107994110A CN107994110A CN201711214215.3A CN201711214215A CN107994110A CN 107994110 A CN107994110 A CN 107994110A CN 201711214215 A CN201711214215 A CN 201711214215A CN 107994110 A CN107994110 A CN 107994110A
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- Prior art keywords
- layer
- silica gel
- encapsulation structure
- sphere lens
- led encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000000741 silica gel Substances 0.000 claims abstract description 90
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 90
- 239000000843 powder Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 229920000297 Rayon Polymers 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229960001866 silicon dioxide Drugs 0.000 description 72
- 230000000694 effects Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 235000012771 pancakes Nutrition 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- -1 wherein Substances 0.000 description 1
Classifications
-
- H01L33/52—
-
- H01L33/507—
-
- H01L33/54—
-
- H01L33/58—
Landscapes
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation structure, including：Package substrate (21)；LED chip, is fixed on the package substrate (21)；Layer of silica gel, including：It is successively set on the first layer of silica gel (22) and the second layer of silica gel (24) of the LED chip upper surface, and it is additionally provided with multiple sphere lens (23) between first layer of silica gel (22) and second layer of silica gel (24), wherein, second layer of silica gel (24) contains yellow fluorescent powder.The embodiment of the present invention is arranged in the second layer of silica gel by setting multiple sphere lens, and by yellow fluorescent powder so that illumination is more concentrated, and avoids increase extra lens, reduces production cost.
Description
Technical field
The invention belongs to photoelectric device technical field, and in particular to a kind of LED encapsulation structure.
Background technology
LED has the characteristics that long lifespan, luminous efficiency are high, colour rendering is good, safe and reliable, rich in color and easy to maintain.
In current environmental pollution getting worse, under the background of climate warming and energy growing tension, grown up based on great power LED
Semiconductor illumination technique has been acknowledged as one of 21 century high-tech sector most with prospects, this is shone from coal gas
After bright, incandescent lamp and fluorescent lamp, the mankind illuminate a quantum leap in history, improve the lighting quality of human lives rapidly.
Increasingly increase for the demand of LED over the past few years, particularly high brightness and high-power LED.However, high brightness
Though and high-power LED can produce substantial amounts of light, but also can produce substantial amounts of heat, high temperature to be applied directly on chip surface
The quantum efficiency of fluorescent powder be remarkably decreased, so as to seriously affect the luminous efficiency of LED encapsulation structure.
On the other hand, since the light that LED light source is sent generally is distributed in divergence expression, light source brightness of illumination not enough collects
In, the prior art generally carries out shaping by increasing outer lens to light beam, adds production cost.
The content of the invention
For the problem present on, the present invention proposes a kind of new LED encapsulation structure, and specific embodiment is such as
Under.
Specifically, the embodiment of the present invention provides a kind of LED encapsulation structure, including：
Package substrate 21；
LED chip, is fixed on the package substrate 21；
Layer of silica gel, including：The first layer of silica gel 22 and the second layer of silica gel 24 of the LED chip upper surface are successively set on,
And multiple sphere lens 23 are additionally provided between first layer of silica gel 22 and second layer of silica gel 24, wherein, described
Second silica gel layer 24 contains yellow fluorescent powder.
In one embodiment of the invention, the upper surface of second layer of silica gel 24 is arc-shaped.
In one embodiment of the invention, the yellow fluorescent powder is contained in multiple sphere lens 23.
In one embodiment of the invention, the refractive index of first layer of silica gel 22 is less than second layer of silica gel 24
Refractive index, and the refractive index of the sphere lens 23 is more than the refractive index of second layer of silica gel 24..
In one embodiment of the invention, first layer of silica gel 22 is high temperature resistant silica gel.
In one embodiment of the invention, the LED chip is GaN base blue chip.
In one embodiment of the invention, a diameter of 10-200 microns of the sphere lens 23, and multiple balls
23 uniform intervals of shape lens arrange, and spacing is 10-200 microns.
In one embodiment of the invention, multiple sphere lens 23 can also be able to be in rectangular evenly distributed
Diamond array.
In one embodiment of the invention, the substrate 21 is solid aluminium sheet, and the thickness of the substrate 21 is more than 0.5 milli
Rice, less than 10 millimeters.
In one embodiment of the invention, stent is further included, the substrate 21 is consolidated by way of buckle or viscose glue
Due on the stent.
Beneficial effects of the present invention are：
1st, by setting sphere lens between the first layer of silica gel and the second layer of silica gel, and by the upper table of the second layer of silica gel
Face forms arc so that encapsulating structure has lensed function in itself, while ensureing that illumination is more concentrated, it is thus also avoided that increase
Add extra lens to carry out shaping to light, reduce production cost；
2nd, sphere lens and the second layer of silica gel are made by using the silica gel containing yellow fluorescent powder, avoid fluorescent powder with
LED chip directly contacts, and improves the efficiency of light extraction of LED encapsulation.
Brief description of the drawings
Fig. 1 is the structure diagram of LED encapsulation structure provided in an embodiment of the present invention；
Fig. 2 is the structure diagram of GaN base blue chip provided in an embodiment of the present invention；
Fig. 3 A, Fig. 3 B are the arrangement schematic diagram of multiple sphere lens provided in an embodiment of the present invention.
Description of reference numerals：
21- package substrates；
The first layer of silica gel of 22-；
23- sphere lens；
The second layer of silica gel of 24-.
Embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Please refer to Fig.1, Fig. 1 is the structure diagram of LED encapsulation structure provided in an embodiment of the present invention；Wherein, it is of the invention
The LED encapsulation structure that embodiment provides, the encapsulating structure include：Package substrate 21；LED chip, is fixed in the encapsulation base
On plate 21；Specifically, the LED chip is GaN base blue chip.
Further, which further includes layer of silica gel, wherein, layer of silica gel includes setting gradually in the embodiment of the present invention
The first layer of silica gel 22 and the second layer of silica gel 24 in the LED chip upper surface, that is, layer of silica gel in the embodiment of the present invention by
Two layers of layer of silica gel composition, specifically, the first layer of silica gel 22 is applied directly to the upper surface of LED chip, directly connects with LED chip
Touch, and yellow fluorescent powder do not contained in the first layer of silica gel 22, the second layer of silica gel 24 be located above the first layer of silica gel 22 not with LED core
Piece contacts, and contains yellow fluorescent powder in the second layer of silica gel 24, has been achieved in that LED chip mesh separated with fluorescent powder
, avoid LED chip and absorb the light that reflections from phosphor particles are returned, improve light extraction efficiency；And the blue light that LED chip is sent
It is irradiated on yellow fluorescent powder, photochromic mixing can form white light.Therefore, by the way that yellow fluorescent powder is mixed into the present embodiment
In second silica gel layer 24, the quantum efficiency for solving fluorescent powder caused by yellow fluorescent powder is directly contacted with LED chip is remarkably decreased
Technical problem.
It should be noted that the LED chip in the embodiment of the present invention is GaN base blue chip, its structure as shown in Fig. 2,
Fig. 2 is the structure diagram of GaN base blue chip LED chip provided in an embodiment of the present invention；Wherein, layer 1 is substrate material, layer
2 be GaN cushions, and layer 3 is N-type GaN layer, and layer 4 and layer 6 are p-type GaN Quantum Well wide bandgap materials, and layer 5 is INGaN luminescent layers,
Layer 7 is AlGaN barrier materials, and layer 8 is p-type GaN layer, the thickness of LED chip between 90 microns -140 microns, in addition,
LED chip can also be other kinds of, the invention is not limited in this regard.
Further, in the embodiment of the present invention, it is additionally provided between the first layer of silica gel 22 and the second layer of silica gel 24 multiple
Sphere lens 23, specifically, silica-gel sphere is made first with episphere mould and lower semisphere mould, then remove lower semisphere mould
Tool, silica-gel sphere is placed in the hemispherical groove of 22 upper surface of the first layer of silica gel, after high-temperature shaping, removes episphere mould
Tool, forms sphere lens 23, wherein, the size phase of the size of silica-gel sphere and the hemispherical groove of the first layer of silica gel upper surface
Match somebody with somebody.
In the embodiment of the present invention, multiple sphere lens 23 are set in the first layer of silica gel 22, finally in multiple sphere lens
23 and the top of the first layer of silica gel 22 second layer of silica gel 24 is set, referring again to Fig. 1, between adjacent two sphere lens 23
Connected, the second layer of silica gel 24 and the first layer of silica gel 22 are kept apart, the embodiment of the present invention passes through in the first silicon by silica gel strip
Multiple sphere lens 23 are added between 22 and second layer of silica gel 24 of glue-line, such GaN base blue chip passes through the first layer of silica gel
After 22, into sphere lens 23, sphere lens 23 have the amplification factor than ordinary lens bigger, therefore, expand light
Illumination range, the illumination after diverging are mapped in the second layer of silica gel 24, and excitation yellow fluorescent powder sends white light.It is it follows that of the invention
Embodiment improves LED chip hair by adding multiple sphere lens 23 between the first layer of silica gel 22 and the second layer of silica gel 24
The problem of light disperses so that light beam is more uniform in concentration zones, improves the light extraction efficiency and uniform in light emission of LED light emitting diodes
Degree.
It should be noted that referring again to Fig. 1, bottom surface and the LED chip upper table of the sphere lens 23 in the present embodiment
The distance between face is L, it is preferred that L is more than 3 microns.
Multiple sphere lens 23 in the embodiment of the present invention are " convexo-convex mirrors ", the focal length f=R/ (2 (n2- of " convexo-convex mirror "
N1)), wherein, n2 is the refractive index of sphere lens 23, and n1 takes the average of the refractive index of the first layer of silica gel 22 and the second layer of silica gel 24
(in the embodiment of the present invention sphere lens about 23 two layers of silica gel refractive index close), R is the radius of sphere lens 23.
In order to ensure that light does not gather state after lens outgoing, without dissipating, in the embodiment of the present invention, the second layer of silica gel
24 height for being higher by 23 top surface of sphere lens should be within 2 times of focal lengths, namely the second layer of silica gel 24 should be higher by sphere lens
23 top surface R/ (n2-n1), in practical applications, it is micro- that the thickness of the second layer of silica gel 24 is generally higher by 23 top surface 50-500 of sphere lens
Rice.
Since the light that LED is sent is in divergence expression distribution so that need to carry out shaping to LED beam by outer lens,
Production cost is improved, in order to solve the technical problem, in the embodiment of the present invention, the upper surface of the second layer of silica gel 24 is arc-shaped,
Specifically, arc, the arc is made in the upper surface of the second layer of silica gel 24 using hemispherical in the embodiment of the present invention
It is specifically as follows hemispherical, parabolic type or pancake, wherein hemispherical beam angle is maximum, is suitable for general lighting application；
Parabola beam angle is minimum, is suitable for local lighting application；And pancake falls between, it is suitable for guidance lighting.Therefore,
Specific shape can be selected according to products application place, to reach best using effect.High among so, both sides are low
Surface structure causes the second silica gel to be provided with the effect of lens, when illumination is mapped to the second 24 surface of layer of silica gel, by the second silicon
The shaping of glue-line 24 so that illumination is more concentrated uniformly, and need not increase outer lens, reduces production cost.
In the present embodiment, in order to preferably make GaN base blue chip excitation yellow fluorescent powder send white light, this implementation
In example, contain yellow fluorescent powder in multiple sphere lens 23, specifically, the light beam that GaN base blue chip is sent irradiates first
Onto the first layer of silica gel 22, then it is irradiated on sphere lens 23, sphere lens 23 can change the direction of propagation of light, Neng Gouyou
Effect ground suppresses total reflection effect, is conducive to more light emittings to LED outsides, improves the luminous efficiency of LED.Due to sphere lens
23 and second contain yellow fluorescent powder in layer of silica gel 24, ensure that the light beam that GaN base blue chip is sent can be irradiated to more
Yellow fluorescent powder on so that LED illumination effects are more preferable, LED illumination effects caused by avoiding fluorescent powder amount deficiency are poor
Technical problem.
It should be noted that in order to ensure that the light beam that GaN base blue chip is sent constantly expands, not only need setting can
Expand multiple sphere lens 23 of range of exposures and the upper surface of the second layer of silica gel 24 is arranged to arc, it is also necessary in material
Aspect meets the following conditions：The refractive index of first encapsulated layer 22 is less than the refractive index of second encapsulated layer 24, and described
The refractive index of sphere lens 23 is more than the refractive index of second encapsulated layer 24.Specifically, in the embodiment of the present invention, layer of silica gel
The set-up mode that refractive index is sequentially increased from bottom to top, can preferably suppress total reflection phenomenon, and the second encapsulated layer 24
Refractive index is the smaller the better, forms refringence to avoid between the second encapsulated layer 24 and outside air, causes to be totally reflected, by this
Kind of set-up mode, to make illumination maximumlly shine out, avoids total reflection so that light is packaged structure absorption and is changed into heat,
Improve efficiency of light extraction.
In the embodiment of the present invention, the lens silica gel material of multiple sphere lens 23 can be by polycarbonate, poly- methyl-prop
Olefin(e) acid formicester and glass mix, and the refractive index of sphere lens 23 can be adjusted according to the difference of each component.And the
The material of second silica gel layer 24 can be that methyl silicone rubber and phenyl high index of refraction organic silicon rubber mix, the embodiment of the present invention
In the second layer of silica gel 24 refractive index it is the smaller the better, be the upper limit with 1.5.The light that so GaN base blue chip is sent is to external radiation
When, preferable light emission rate can be obtained, and make it that light is more uniform in irradiated region.
It should be noted that since the first layer of silica gel 22 is applied directly in LED chip, it is desirable to be able to be resistant to LED chip
The substantial amounts of heat come out, therefore the first layer of silica gel 22 contacted with LED chip is made of heat safe silica gel, thus may be used
To avoid silica gel be heated easy aging jaundice cause light transmittance to decline the problem of.
In addition, yellow fluorescent powder can use (Y, Gd) in the embodiment of the present invention3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2:Eu、M-α-SiAlON:The materials such as Eu, after light passes through 23 and second layer of silica gel 24 of sphere lens, swash
Yellow fluorescent powder is sent out, the wave-length coverage for making its fluorescence sent is 570nm-620nm.
In the embodiment of the present invention, the size of sphere lens 23 is limited, if sphere lens 23 is undersized, that
Do not have an effect of optically focused, and when sphere lens 23 it is oversized when, then it is even to be easy to cause uneven illumination, therefore, this reality
Applying in example, the diameter 2R of sphere lens 23 is between 10-200 microns, and 23 uniform intervals of multiple sphere lens arrange,
I.e. spacing is equal, and in the present embodiment, the spacing A between two neighboring sphere lens 23 is 10-200 microns, it is preferred that adjacent two
Spacing A between a sphere lens is in 5 microns -10 microns, the embodiment of the present invention, between adjacent two sphere lens 23
Spacing it is the smaller the better.
It should be noted that in the embodiment of the present invention, the spacing between multiple sphere lens 23 can not also be equal, with work
Subject to actual needs in industry production.
It should be noted that in the embodiment of the present invention, sphere lens 23 are so that the light of GaN base blue chip irradiation carries out
Shaping so that light beam is more concentrated, and as shown in Figure 3A and Figure 3B, the multiple sphere lens 23 formed in the first layer of silica gel 22 can
With rectangular evenly distributed, it can also assume diamond in shape evenly distributed, in addition, the arrangement mode of multiple sphere lens 23 can also be round
Shape, ellipse or irregular shape, so as to ensure that the light of light source is uniformly distributed in concentration zones to greatest extent, this
Inventive embodiments are not restricted this.
Since LED chip is contacted with package substrate 21, and radiated by package substrate 21, in the embodiment of the present invention
Package substrate 21 uses the preferably solid aluminium sheet of thermal diffusivity, and aluminium sheet thermal capacitance is big, good heat conduction effect, and the thickness of package substrate 21
Between 0.5mm-10mm, the thicker package substrate 21 of use can prevent basal plate heated from deforming, and this addresses the problem encapsulation
Basal plate heated deformation causes to contact not close, the technical problem of heat dissipation effect difference with LED chip.
In the embodiment of the present invention, stent is further included, substrate 21 is fixed on the stent by way of buckle or viscose glue
On, in the embodiment of the present invention, after substrate 21 is fixed on stent, in actual use, can secure a bracket to any use should
At the component of light emitting diode or position.
Above content is to combine the further description that specific preferred embodiment makees the embodiment of the present invention, no
It can assert that the specific implementation of the present invention is confined to these explanations.Come for general technical staff of the technical field of the invention
Say, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, should all be considered as belonging to this hair
Bright protection domain.
Claims (10)
- A kind of 1. LED encapsulation structure, it is characterised in that including：Package substrate (21)；LED chip, is fixed on the package substrate (21)；Layer of silica gel, including：The first layer of silica gel (22) and the second layer of silica gel (24) of the LED chip upper surface are successively set on, And multiple sphere lens (23) are additionally provided between first layer of silica gel (22) and second layer of silica gel (24), wherein, Second layer of silica gel (24) contains yellow fluorescent powder.
- 2. LED encapsulation structure according to claim 1, it is characterised in that the upper surface of second layer of silica gel (24) is in Arc.
- 3. LED encapsulation structure according to claim 1, it is characterised in that contain in multiple sphere lens (23) The yellow fluorescent powder.
- 4. LED encapsulation structure according to claim 1, it is characterised in that the refractive index of first layer of silica gel (22) is small In the refractive index of second layer of silica gel (24), and the refractive index of the sphere lens (23) is more than second layer of silica gel (24) Refractive index.
- 5. LED encapsulation structure according to claim 1, it is characterised in that first layer of silica gel (22) is high temperature resistant silicon Glue.
- 6. LED encapsulation structure according to claim 1, it is characterised in that the LED chip is GaN base blue chip.
- 7. LED encapsulation structure according to claim 1, it is characterised in that a diameter of 10- of the sphere lens (23) 200 microns, and multiple sphere lens (23) uniform intervals arrange, spacing is 10-200 microns.
- 8. LED encapsulation structure according to claim 1, it is characterised in that multiple sphere lens (23) can be in square Shape is evenly distributed, and can also assume diamond in shape arrangement.
- 9. LED encapsulation structure according to claim 1, it is characterised in that the substrate (21) is solid aluminium sheet, the base The thickness of plate (21) is more than 0.5 millimeter, less than 10 millimeters.
- 10. LED encapsulation structure according to claim 1, it is characterised in that further include stent, the substrate (21) passes through The mode of buckle or viscose glue is fixed on the stent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214215.3A CN107994110B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214215.3A CN107994110B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
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| Publication Number | Publication Date |
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| CN107994110A true CN107994110A (en) | 2018-05-04 |
| CN107994110B CN107994110B (en) | 2020-03-24 |
Family
ID=62033626
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
| CN207705235U (en) * | 2017-11-28 | 2018-08-07 | 西安科锐盛创新科技有限公司 | A kind of LED encapsulation structure |
-
2017
- 2017-11-28 CN CN201711214215.3A patent/CN107994110B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
| CN207705235U (en) * | 2017-11-28 | 2018-08-07 | 西安科锐盛创新科技有限公司 | A kind of LED encapsulation structure |
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Effective date of registration: 20211224 Address after: 528200 a, building 104, building 2, Liandong Yougu Park, No. 3, East Third District, Jiansha Road, Danzao Town, Nanhai District, Foshan City, Guangdong Province (residence declaration) Patentee after: Guangdong Anlin Electronic Technology Co.,Ltd. Address before: 710065 Xi'an new hi tech Zone, Shaanxi, No. 86 Gaoxin Road, No. second, 1 units, 22 stories, 12202 rooms, 51, B block. Patentee before: XI'AN CREATION KEJI Co.,Ltd. |