CN107978520A - The growth technique of metal - Google Patents
The growth technique of metal Download PDFInfo
- Publication number
- CN107978520A CN107978520A CN201711184083.4A CN201711184083A CN107978520A CN 107978520 A CN107978520 A CN 107978520A CN 201711184083 A CN201711184083 A CN 201711184083A CN 107978520 A CN107978520 A CN 107978520A
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- CN
- China
- Prior art keywords
- tungsten
- annealing
- temperature
- metal
- growth technique
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 21
- 239000002184 metal Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000012010 growth Effects 0.000 title claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 29
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 28
- 239000010937 tungsten Substances 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 6
- 238000003860 storage Methods 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005452 bending Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to the growth technique of metal, comprise the following steps：Matrix is put into boiler tube；Matrix is heated to depositing temperature；Gaseous tungsten hexafluoride and hydrogen are passed through in boiler tube, W film is obtained in substrate deposit；By carrying out high annealing to boiler tube, the high annealing to W film is realized.The present invention reduces the resistivity and stress of the tungsten that deposition is formed, further reduces the bending of the resistance and wafer of whole device by adding high-temperature annealing step in the growth technique of tungsten.In addition, for other metal structures in three-dimensional storage, this innovative annealing process is made other structures with important directive significance.
Description
Technical field
The present invention relates to the manufacturing process area of semiconductor, more particularly to a kind of growth technique of metal.
Background technology
With the continuous development of semiconductor technology, memory manufacturing technology is progressively from simple planar structure mistake at present
It is one of mainstream of international research and development to cross to complex three-dimensional structure, the technical research of three-dimensional storage.
As the development of memory technology is by 2 d-to-3 d, the requirement to technique is also more and more harsh.Meanwhile as grid
The growth pattern of the tungsten of pole material also gradually slowly develops into chemical vapor deposition from physical vapour deposition (PVD).Normal conditions
Under, so-called chemical vapor deposition, be under medium temperature or high temperature, it is anti-by the gas chemistry between gaseous precursor compound
Answer and form solid matter and be deposited on matrix, in special circumstances, chemical reaction is promoted by plasma and laser assist techniques,
Deposition can also be made to carry out at a lower temperature.
In current three-dimensional memory structure, tungsten gate structure is due to very high depth-to-width ratio, in order to realize
The filling capacity of good metal gates, the growth pattern of the general chemical vapor deposition using low temperature environment.But in low temperature
Under the conditions of, the tungsten grid of formation would generally have higher resistivity and stress, this is because, the chemical vapor deposition of tungsten
Reacting gas tungsten hexafluoride (WF can be used during product6) and hydrogen (H2).When tungsten is grown, fluorine element is easy to accumulate in gold
Belong to the crystal boundary of tungsten grain and can not escape out, this can increase the resistivity of whole metal W film, while thin during low-temperature epitaxy
Film can also have very big stress.
The high resistivity of tungsten grid can directly result in the resistance rise of whole device, while the high stress of tungsten grid
Follow-up photoetching process can be impacted.
The content of the invention
The purpose of the present invention is to solve at least one of problem above, the present invention provides a kind of growth technique of metal.
A kind of growth technique of metal, comprises the following steps：
Matrix is put into boiler tube.
Matrix is heated to depositing temperature.
Gaseous metal initial compound and auxiliary gas are passed through in boiler tube, metallic film is obtained in substrate deposit.
To metallic film high annealing.
Wherein, the high annealing realized by annealing to furnace tube high temperature to metallic film, the temperature of furnace tube high temperature annealing are
650~750 DEG C, annealing when it is a length of 1.5~3.5 it is small when.
Wherein, depositing temperature is 200~400 DEG C.
Wherein, metal is tungsten, and precursor compound is tungsten hexafluoride, and auxiliary gas is hydrogen, matrix be include silicon substrate and
The wafer of stacked structure.
Wherein, furnace tube high temperature annealing temperature be 700 DEG C, annealing when it is a length of 2 it is small when.
The present invention reduces the electricity for the tungsten that deposition is formed by adding high-temperature annealing step in the growth technique of tungsten
Resistance rate and stress, further reduce the bending of the resistance and wafer of whole device.In addition, other gold for three-dimensional storage
Belong to structure, this innovative annealing process is made other structures with important directive significance.
Brief description of the drawings
By reading the detailed description of hereafter preferred embodiment, it is various other the advantages of and benefit it is common for this area
Technical staff will be clear understanding.Attached drawing is only used for showing the purpose of preferred embodiment, and is not considered as to the present invention
Limitation.And in whole attached drawing, identical component is denoted by the same reference numerals.In the accompanying drawings：
Fig. 1 shows the flow chart of the growth technique of the metal of embodiment according to the present invention.
Embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although this public affairs is shown in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.Conversely, there is provided these embodiments are to be able to be best understood from the disclosure, and can be by this public affairs
The scope opened completely is communicated to those skilled in the art.
As shown in Figure 1, a kind of growth technique of metal, comprises the following steps：Matrix is put into boiler tube；Matrix is heated
To depositing temperature；Gaseous metal initial compound and auxiliary gas are passed through in boiler tube, metal foil is obtained in substrate deposit
Film；By carrying out high annealing to boiler tube, the high annealing to metallic film is realized.
The technique can apply with crystal circle structure deposits tungsten formed in being made of tungsten grid.When metal is tungsten, in stove
The crystal circle structure with stacked structure and silicon substrate is put into pipe, crystal circle structure is now heated to 200~400 DEG C of deposition temperature
Degree, is then passed through the tungsten hexafluoride and hydrogen of gas in boiler tube, and deposition obtains W film on crystal circle structure.Then to boiler tube
Overall to carry out high annealing, high temperature anneal temperature is 650~750 DEG C, when anneal duration is 1.5~3.5 small.By this mistake
Journey, can reduce by 20% or so by the resistance for the memory device being finally made, while eliminate the probability of wafer bow.
In the embodiment of tungsten growth, three implementations that depositing temperature is set to 250 DEG C, 300 DEG C and 400 DEG C are chosen respectively
Example, 700 DEG C/2h is set to by the parameter that furnace tube high temperature is annealed, and electricity is carried out to the metal W film obtained before annealing and after annealing
The contrast of resistance rate and stress, comparing result are as shown in the table：
Understood by upper table, in 250 DEG C of depositing temperature, the resistivity that high-temperature annealing step can deposit tungsten reduces
16% itself stress reduces by 37%, and when depositing temperature is 300 DEG C, the resistivity that high-temperature annealing step can deposit tungsten reduces
8.5% itself stress reduces by 15%, and when depositing temperature is 395, the resistivity that high-temperature annealing step can deposit tungsten reduces
4.5% itself stress reduces by 3%.
In conclusion the present invention is in the case where tungsten deposition is completed, using boiler tube to tungsten high annealing
Mode, on the one hand the fluorine for being collected at crystal boundary is escaped, reduce Oil repellent with high temperature.On the other hand the side grown by grain mergin
Formula improves the crystallization degree of tungsten, is released stress concentration caused by grain boundaries.By reducing Oil repellent and increase
The mode of crystallization degree, has achieveed the purpose that the resistivity and stress for reducing metal W film.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim
Subject to enclosing.
Claims (5)
1. the growth technique of metal, it is characterised in that comprise the following steps：
Matrix is put into boiler tube；
Matrix is heated to depositing temperature；
Gaseous metal initial compound and auxiliary gas are passed through in boiler tube, metallic film is obtained in substrate deposit；
High annealing is carried out to metallic film.
2. the growth technique of tungsten as claimed in claim 1, it is characterised in that
The high annealing realized by annealing to furnace tube high temperature to metallic film, the temperature of furnace tube high temperature annealing is 650~750
DEG C, annealing when it is a length of 1.5~3.5 it is small when.
3. the growth technique of tungsten as claimed in claim 1, it is characterised in that
Depositing temperature is 200~400 DEG C.
4. the growth technique of tungsten as claimed in claim 1, it is characterised in that
Metal is tungsten, and precursor compound is tungsten hexafluoride, and auxiliary gas is hydrogen, and matrix is to include silicon substrate and stacked structure
Wafer.
5. the growth technique of tungsten as claimed in claim 2, it is characterised in that
Furnace tube high temperature annealing temperature be 700 DEG C, annealing when it is a length of 2 it is small when.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711184083.4A CN107978520B (en) | 2017-11-23 | 2017-11-23 | Metal growth process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711184083.4A CN107978520B (en) | 2017-11-23 | 2017-11-23 | Metal growth process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107978520A true CN107978520A (en) | 2018-05-01 |
| CN107978520B CN107978520B (en) | 2020-01-31 |
Family
ID=62011210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711184083.4A Active CN107978520B (en) | 2017-11-23 | 2017-11-23 | Metal growth process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107978520B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114293253A (en) * | 2021-12-03 | 2022-04-08 | 威镝精工科技(苏州)有限责任公司 | Metal tungsten tube for X-ray collimator and preparation method thereof |
| CN114420533A (en) * | 2021-12-08 | 2022-04-29 | 武汉新芯集成电路制造有限公司 | Method for preparing tungsten on semiconductor wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030045039A1 (en) * | 2001-09-05 | 2003-03-06 | Shin Dong Suk | Method of fabricating a semiconductor device having reduced contact resistance |
| US6642118B2 (en) * | 2002-01-14 | 2003-11-04 | Mactronix International Co., Ltd. | Method for eliminating polysilicon residue by fully converting the polysilicon into silicon dioxide |
| CN103852496A (en) * | 2014-03-07 | 2014-06-11 | 天津大学 | Preparation method of gas sensor element based on quasi-directed tungsten oxide nanowires |
| CN107034467A (en) * | 2017-03-13 | 2017-08-11 | 深圳先进技术研究院 | A kind of hard alloy piece with diamond coatings and preparation method thereof |
-
2017
- 2017-11-23 CN CN201711184083.4A patent/CN107978520B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030045039A1 (en) * | 2001-09-05 | 2003-03-06 | Shin Dong Suk | Method of fabricating a semiconductor device having reduced contact resistance |
| US6642118B2 (en) * | 2002-01-14 | 2003-11-04 | Mactronix International Co., Ltd. | Method for eliminating polysilicon residue by fully converting the polysilicon into silicon dioxide |
| CN103852496A (en) * | 2014-03-07 | 2014-06-11 | 天津大学 | Preparation method of gas sensor element based on quasi-directed tungsten oxide nanowires |
| CN107034467A (en) * | 2017-03-13 | 2017-08-11 | 深圳先进技术研究院 | A kind of hard alloy piece with diamond coatings and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114293253A (en) * | 2021-12-03 | 2022-04-08 | 威镝精工科技(苏州)有限责任公司 | Metal tungsten tube for X-ray collimator and preparation method thereof |
| CN114420533A (en) * | 2021-12-08 | 2022-04-29 | 武汉新芯集成电路制造有限公司 | Method for preparing tungsten on semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107978520B (en) | 2020-01-31 |
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