CN107958930A - One kind nitridation Gallium radical heterojunction field effect transistor structures - Google Patents
One kind nitridation Gallium radical heterojunction field effect transistor structures Download PDFInfo
- Publication number
- CN107958930A CN107958930A CN201610907438.7A CN201610907438A CN107958930A CN 107958930 A CN107958930 A CN 107958930A CN 201610907438 A CN201610907438 A CN 201610907438A CN 107958930 A CN107958930 A CN 107958930A
- Authority
- CN
- China
- Prior art keywords
- island region
- type island
- grid
- type
- region domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 36
- 230000005669 field effect Effects 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 28
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 20
- 238000007654 immersion Methods 0.000 claims description 8
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims 6
- 238000002347 injection Methods 0.000 claims 3
- 239000007924 injection Substances 0.000 claims 3
- 230000015556 catabolic process Effects 0.000 abstract description 15
- 238000000407 epitaxy Methods 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 48
- 229910002601 GaN Inorganic materials 0.000 description 44
- 238000005516 engineering process Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 206010036590 Premature baby Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention relates to one kind to nitrogenize Gallium radical heterojunction field effect transistor structures, including following characteristics：The wide-band gap material (such as barrier layer AlGaN) nitrogenized in Gallium base heterojunction materials forms I type hetero-junctions with small gap material GaN, epi-layer surface has source electrode, grid and drain electrode, wherein at least there is a p type island region domain to be placed near source region inner periphery, this p type island region domain is extended under nitridation Gallium surfaces from semiconductor epitaxial layer surface, depth is more than 0.1 micron, the contact portion in source metal and p type island region domain is for the Ohmic contact of metal/p type island region or close to Ohmic contact, contacted with non-p-type area epitaxy layer surface be metal/nitridation Gallium cap layers or metal/AlGaN layer N-type Ohmic contact, source metal through this p type island region domain can allow device effectively connect away breakdown when caused electron hole pair in hole so that device is safely used.
Description
Technical field
The present invention relates to one kind to nitrogenize Gallium radical heterojunction field effect transistor structures, is nitrogenized more particularly to one kind
The high electron mobility field-effect transistor semiconductor device structure of Gallium base heterojunctions.
Background technology
Carborundum and gallium nitride are known as third generation semiconductor, they will be that semiconductor brings technical revolution.Before,
These wide bandgap semiconductors have been developed several ten years, and 1 up to 2002 or so, and company of Infineon releases the Schottky of 600V
Diode, announces that carborundum formally starts to provide product with practical value.Afterwards, grid-control field-effect silicon carbide transistor is also opened
Begin to launch, it is also more and more more to be engaged in the related manufacturer of silicon carbide power device, from the point of view of product technology aspect, at that time
The carborundum of phase is more ripe than gallium nitride, research and development paces, what 2008 or so, some companies such as U.S. but gallium nitride does not stop
The IR of state, the Transform in the U.S., Japanese Toshiba also begin to provide the sample of gallium nitride power device in succession.Afterwards, the U.S.
EPC, Japanese Fujitsu, Panasonic, Rohm, then has the companies such as ST, Onsemi and Ti also to release one after another their nitridation Gallium
Product.Under the promotion of these companies, the whole ecological environment for nitrogenizing Gallium power devices is greatly improved, from the extension of gallium nitride,
Technique makes, and encapsulation, drive integrated circult and application etc. all reach its maturity.It is generally believed that from the point of view of present situation, hit
Wear wide band gap semiconductor device market of the voltage at 1200 volts or less, it will be that GaN HEMT are leading, more than 1200 volts
It is then the world of carborundum.
Gallium nitride (GaN) is semiconductor material with wide forbidden band, than the breakdown electric field characteristic that silicon has bigger, also has high electronics to satisfy
And drift velocity, generally speaking, GaN is the excellent material that high frequency and high-power semiconductor devices can be manufactured with Come.
Gallium nitride (GaN) base heterojunction material is the high breakdown electric field for having continued GaN material, high electronics saturation drift velocity
The advantages that.AlGaN/GaN is that the primary structure in GaN base heterojunction material represents, and wherein AlGaN is wide-band gap material, and GaN is
Arrowband material, both form I type hetero-junctions, and two-dimensional electron gas (2DEG) is located at the GaN sides of heterojunction boundary, is to nitrogenize at present
Hot spot in gallium semi-conducting material and device research field.
Since gallium nitride (GaN) single crystalline substrate is prohibitively expensive and immature, general (GaN) base device is without using vertical junction
Structure, but use transversary.The structure of high voltage lateral device manufacture with nitridation Gallium (GaN) generally as shown in Figure 1, due to
The doping process prematurity of gallium nitride, especially p-type are adulterated, it is not easy to are controlled, so far always, the structure of Fig. 1 does not have business yet
The product of change, in contrast, with AlGaN/GaN semi-conducting material forms into hetero-junctions, so as to form high electron mobility crystal
(HEMT) device is managed, its basic structure is as shown in Fig. 2, compared to other semi-conducting materials, such as AlGaAs/GaAs, AlGaN/GaN
The HEMT device that material manufacture goes out has more preferable electric property, because it is III group nitrogen to manufacture the wurtzite structure GaN of device with what
The hexagonal crystallographic texture of compound, is that a kind of band gap is wide and with suppressing electric, ferroelectric semi-conducting material, this crystal structure lacks
Inversion symmetry, is presented very strong polarity effect, including piezoelectricity and spontaneous polarization, piezoelectric modulus than other iii-vs,
More than big 1 order of magnitude of Group II-VI semiconductor material, spontaneous polarization strength is also very big, due to III-nitride material energy gap phase
Poor great disparity, heterostructure interface conduction band form deep quantum well there are huge energy bandmatch.Based on strong polarization inducing action and huge
Energy bandmatch, group III-nitride heterostructure interface can form the high concentration two-dimensional electron gas system of the last one quantum localization.Such as
Typical AlGaN/GaN heterojunction structures, its AlGaN potential barrier middle piezoelectricity pole intensity is tradition AlGaAs/GaAs heterojunction structures
In as many as 5 times, high-performance two-dimensional electron gas has extremely important technology application value.AlGaN/GaN systems are as an allusion quotation
The GaN base heterojunction structure of type, in microwave power, high-temperature electronic device and military field etc. have particularly important application value.
Power device can generally bear high anti-bias voltage and big forward conduction electric current, and different power devices has
Different specifications, its anti-bias voltage that can bear and forward current are different.Longitudinal power device is in regional structure
Active area and termination environment can be divided into, termination environment is usually the edge in periphery followed by source region.Lateral power is without eventually
Petiolarea, only active area, active area flow to the flow region of low-voltage electrode for electric current from high-voltage electrode, so, work as transverse direction
When device is in reverse bias, active area (i.e. from high-voltage electrode to the region between low-voltage electrode) needs to be used for bearing from height
Voltage electrode has to the anti-bias voltage between low-voltage electrode and takes this into account, transversal device is in design except reducing electric conduction
Resistance, reduces parasitic capacitance etc., also to take into account the requirement of breakdown voltage, electric from high-voltage electrode to low-voltage in reverse bias
Need to form depletion region between pole, to bear the voltage of reverse bias, to bear the consumption that suitable anti-bias voltage just wants suitable width
Area to the greatest extent, in depleted region, the electric charge between semi-conducting material will balance, and require to remain almost without net charge when exhausting, no
Then depletion region just can not spread Come and bear to apply the voltage of reverse bias thereon.
Current gallium nitride power device, has from low pressure (being less than 100 volts) to the D-mode of high pressure (200 volts to 1200 volts)
Field-effect transistor, or E-mode field-effect transistors, or the Schottky diode of high pressure (400 volts to 1200 volts), are all
HEMT structure.The structure of these devices is simple, for carborundum, the preamble technique of the AlGaN/GaN HEMT of gallium nitride
It is relatively easy to, preamble technique is before referring to including cuing off to chip after the completion of epitaxial film materials.General now is normal
HEMT structure is not have to doped N-type area, and without doped p-type area, the representative cross-sections structure of device is as shown in Figure 2.This
The conducting resistance and switching characteristic of a little devices are all better than silicon device very much, have the excellent spy of typical third generation semiconductor devices
Property.But these devices have a significant drawback, be exactly whether source electrode, grid still drain, neither one electrode can be effectively fast
Receive fastly between AlGaN/GaN in hole caused by breakdown.Under some applications, especially drive motor when, device
It is to be in breakdown conditions that can not avoid moment, in breakdown, substantial amounts of electron hole pair can be produced in device, in high pressure
Under biasing, electrons are gone to drain electrode and are connect away by the drain electrode absorption of Ohmic contact, and Kong Xue They are rested on around grid and source electrode, because
Hole all can not efficiently and effectively be connect away for the grid and source electrode of Fig. 2, under high pressure reverse bias, these rest on grid and source electrode
The hole of surrounding can cause device to burn failure.Current many nitridation Gallium devices are to avoid to have the application that breakdown occurs, it
Be mainly used as the application of radio-frequency power amplifier or PFC (PFC), but nitrogenizing Gallium power devices is finally
Overcome this problem, otherwise, its application prospect can be restricted greatly.
The content of the invention
The shortcomings that disclosed AlGaN/GaN HEMT structure can be to avoid the above, no matter device can be made because of dynamic
The breakdown occurred during caused Hai Shi Static states, caused hole can effectively be connect away during breakdown, will not rest on device
Inner, so that device can safely be used in the application that some have breakdown to occur, such as the application of drive motor.
Basic device principle used in the present invention is to make breakdown occur, in source electrode and the whole near its circumference of grid, to avoid puncturing
Occur to early in some local zonules, then collect electricity caused by breakdown through the p type island region domain being placed on around this
These holes are reached source metal by the Kong Xue And of sub- hole pair.The present invention can pass through ion implanting or immersion in technique
Ion implanting or outer layer growth method are introduced p type island region domain on gallium nitride surface, can pass through domain and technique in design
Flow makes field plate and p type island region domain is placed on appropriate place, and field version can make electric field concentrate on the small model of a certain part of device not too much
Enclose and cause premature breakdown, being placed on source region inner periphery, nearby appropriately the p type island region domain of position can help effectively to make electric field equal
It is distributed evenly, and can helps and receive the hole of empty six centerings of electronics caused by breakdown.Implementing the present invention has kinds of schemes,
It is the key step for implementing each scheme below.
Scheme one：As shown in figure 3, the gate structure of device can be a variety of different structures such as plane grid or groove
Type grid, has field plate on grid, this field plate causes near grid, especially one side close to drain electrode, electric field energy it is more equal
Even distribution, p type island region domain are placed on the appropriate position near source region inner periphery, this p type island region domain is prolonged from semiconductor epitaxial layer surface
Continue to nitridation Gallium surfaces, for depth more than 0.1 micron, the contact portion in source metal and p type island region domain is metal/p type island region
Ohmic contact or close to Ohmic contact, contacted with non-p-type area epitaxy layer surface be metal/nitridation Gallium cap layers or metal/
The N-type Ohmic contact of AlGaN layer.
Scheme two：As shown in figure 4, it is similar with scheme one, it is a difference in that at least part of region in p type island region,
Epitaxial layer AlGaN or AlGaN/ cap layers gallium nitride on epitaxial layer nitridation Gallium therein is disposed of, so that source metal exists
It is as shown in Figure 4 that p type island region nitridation Gallium epi-layer surfaces can be directly contacted in this region.
Scheme three：As shown in Figure 5 and Figure 6, it is similar with scheme one or scheme two, it is overseas except there is p type island region in source region, also
There is independent p type island region domain to be also placed between grid and drain electrode and relatively close to grid, the p type island region domain of this part independence is that do not have
Other p type island region domain is connected to, is also not attached to source metal or gate metal.
Scheme four：As shown in fig. 7, it is similar with scheme three, it is at least part of in grid and drain electrode in place of main difference
Between p type island region domain be to be connected to source region metal.
Scheme five：As shown in Figure 8 and Figure 9, it is similar with scheme three, at least part of p-type between grid and drain electrode
Region is the p type island region being connected in source region, this connection is that , And are non-to be connected via metal connecting via p type island region, this is used to connect
The p type island region connect extends to the p type island region between grid and source electrode from grid close to the p type island region on one side of drain electrode, this is used for the P connected
It is raceway groove under grid originally that when passing through area of grid p type island region domain can, which occupy, in type area, be allowed to become not for another example before
Turn on, channel resistance can increase, but the gate threshold voltage of device can improve, and the electric field near grid can be more uniformly distributed point
Cloth so that grid can be directed at premature failure from internal field's pressure.
More than the p type island region of each scheme can also be used to make the buffer action between chip, can thus save as every
From the grooving step being used.
Brief description of the drawings
Attached drawing is used for providing a further understanding of the present invention, is used to explain the present invention together with embodiments of the present invention,
It is not construed as limiting the invention：
Fig. 1 is the cross-sectional of gallium nitride lateral device structure；
Fig. 2 is the cross-sectional for the AlGaN/GaN HEMT device structures for having GaN cap；
Fig. 3 source areas have the cross-sectional of the nitridation Gallium based hemts structures in p type island region domain；
Source area has the cross-sectional of the nitridation Gallium based hemts structures in p type island region domain in Fig. 4 schemes two；
There is the cross-sectional of the nitridation Gallium based hemts structures in independent p type island region domain between Fig. 5 grids and drain electrode；
There is the top view illustration of the nitridation Gallium based hemts structures in independent p type island region domain between Fig. 6 grids and drain electrode；
The p type island region domain of Fig. 7 schemes four is the top view illustration for the nitridation Gallium based hemts structures for being connected to source region metal；
Fig. 8 schemes five have the cross-sectional of the nitridation Gallium based hemts structures in p type island region domain；
Fig. 9 schemes five have the top view illustration of the nitridation Gallium based hemts structures in p type island region domain；
Figure 10 is that the embodiment of the present invention completes the cross-sectional of all epitaxial layers；
Figure 11 is the cross-sectional that the embodiment of the present invention completes perforate etching on GaN cap/AlGaN/GaN；
Figure 12 is that the embodiment of the present invention completes the cross-sectional in p type island region and P-type grid electrode area on surface；
Figure 13 is that the embodiment of the present invention completes the cross-sectional of deposition source electrode and drain electrode metal.
Reference symbol table：
1 p type island region domain
2 AIN cushions
3 nitridation Gallium (GaN) epitaxial layers
4 AlGaN epitaxial layers
5 nitridation Gallium (GaN) cap layers
6 grids
7 dielectric layers
8 source electrodes
9 drain electrodes
10 Sapphire Substrates
N+ types area in 11 active areas
The type area of Resurf N in 12 nitridation Gallium (GaN) epitaxial layers in active area
P type island region domain in 13 source regions
14 area of grid
15 independent p type island region domains
16 drain regions
Embodiment
The present invention can be used in the HEMT structure of various III nitrogen hetero-junctions, and it is brilliant in relation to lateral field-effect now to lift one
Body tube power device embodiments come introduce the present invention one of which application.How mainly introduced using the present invention in embodiment
One of which scheme (scheme one) process, to what surface passivation layer, metal draws the wear down of XIAN and wafer
It is omitted.
Embodiment：
As shown in Figure 10, obtained with MOCVD methods in Sapphire Substrate (0001) direction Epitaxial growth from substrate up
Include 200nm AIN cushions, the GaN layer of the unintentional doping of 3um, undoped barrier layer Al (0.25) Ga of 25nm successively
(0.75) GaN cap of the unintentional doping of N and 2.5nm.
As shown in figure 11, in GaN surfaces accumulation lithography coating, portion of epi is exposed using p type island region domain aperture mask version
The surface of layer, the perforate size width of p type island region domain aperture mask version is 0.1um to 3.0um, and hole shape can be various geometric graphs
Case such as square, circular and rectangle, then use sense coupling to GaN cap/AlGaN/GaN
(ICP) dry etching of technology, etching gas C12/BC13, etches the epitaxial surface exposed, until exposing AlGaN bottoms
Under GaN layer Bei Ke Erosion fall minimum 0.1 micron of depth, then remove lithography coating.
As shown in figure 12, one layer of p-type epitaxial layer is grown with the epitaxial surface of MOCVD methods on substrate, thickness is more than
0.05 micron, P doping concentrations are higher than 1 × 1016/cm3, then inductive couple plasma is used using lithography coating and Yan Mo Ban And
The dry etching Ke Erosion of body etching (ICP) technology fall the p-type epitaxial layer beyond p type island region and P-type grid electrode area.
As shown in figure 13, in surface metallization medium layer, dielectric layer can be silicon nitride, silica etc., thickness of dielectric layers
It is 1000A between 5000A, in dielectric layer surface accumulation lithography coating, exposes certain media layer using contact hole mask version
Surface, then to dielectric layer use sense coupling (ICP) technology dry etching, etching gas C12/
BC13, until exposing the p type island region domain GaN layer of dielectric layer bottom portion and partial GaN cap, then passes through electron beam evaporation
Method, by four layers of metal：The metal ohmic contact of Ti (200A)/Al (800A)/Ni (200A)/Au (1000A) compositions is evaporated to
Material structure surface, then removes unwanted metal by work stripping technology, only metal is left in contact hole, then through 850
DEG C, the quick thermal annealing process of 30 seconds so that the metal in contact hole forms good Ohm contact electrode.
Finally it should be noted that：It these are only the preferred embodiment of the present invention, be not intended to limit the invention, this hair
It is bright can be used for be related to manufacture various III nitrogen hetero-junctions HEMT device (for example, heterojunction field effect transistor (HEMT FET) or
Schottky diode), the present invention can be used for the semiconductor power discrete device for preparing 100V to 2000V, the embodiment of the present invention
It is to be made an explanation with N-type channel device, the present invention also can be used for P-type channel device, although being carried out with reference to embodiment to the present invention
Detailed description, for those skilled in the art, it still can be to the technical solution described in previous embodiment
Modify, or equivalent substitution is carried out to which part technical characteristic, but within the spirit and principles of the invention, institute
Any modification, equivalent substitution, improvement and etc. of work, should all be included in the protection scope of the present invention.
Claims (10)
1. one kind nitridation Gallium radical heterojunction field effect transistor structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary；
2. epi-layer surface has source electrode, grid and a drain electrode, gate structure can be plane grid or groove type grid, source electrode and
There can be field plate on grid；
3. wherein at least there is a p type island region domain to be placed near source region inner periphery.
2. the thickness of the broad stopband barrier layer AlGaN according to claim 1 its (1) is 10nm to 50nm, small gap material
GaN is unintentional doping, its thickness is 1um to 5um.
3. according to the p type island region domain described in claim 1 its (3), its size width is 0.2um to 5.0um, from semiconductor epitaxial layers
Surface is extended under nitridation Gallium surfaces, and depth is more than 0.1 micron, and source metal and the contact portion in p type island region domain are metal/P
The Ohmic contact in type area or close to Ohmic contact.
4. according to the p type island region domain described in claim 1 its (3), it is characterised in that the p type island region domain be in technique pass through from
Son injection plasma immersion ion implantation (Plasma Immersion Ion Implantation) or outer layer growth method
Formed.
5. one kind nitridation Gallium radical heterojunction field effect transistor structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary, and the wherein thickness of broad stopband barrier layer AlGaN is 10nm to 50nm, low energy gap
Material GaN is unintentional doping, its thickness is 1um to 5um；
2. epi-layer surface has source electrode, grid and a drain electrode, gate structure can be plane grid or groove type grid, source electrode and
There can be field plate on grid；
3. wherein at least there is a p type island region domain to be placed near source region inner periphery；
4. wherein at least there is a p type island region domain to be placed between grid and drain electrode and relatively close to grid, the independent P of this part point
Type region is to be not attached to other p type island region domain, is also not attached to source metal or gate metal.
6. according to the p type island region domain described in claim 5 its (3), its size width is 0.2um to 5.0um, from semiconductor epitaxial layers
Surface is extended under nitridation Gallium surfaces, and depth is more than 0.1 micron, and source metal and the contact portion in p type island region domain are metal/P
The Ohmic contact in type area or close to Ohmic contact.
7. according to the p type island region domain described in claim 5 its (3), it is characterised in that the p type island region domain be in technique pass through from
Son injection plasma immersion ion implantation (Plasma Immersion Ion Implantation) or outer layer growth method
Formed.
8. one kind nitridation Gallium radical heterojunction field effect transistor structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary, and the wherein thickness of broad stopband barrier layer AlGaN is 10nm to 50nm, low energy gap
Material GaN is unintentional doping, its thickness is 1um to 5um；
2. epi-layer surface has source electrode, grid and a drain electrode, gate structure can be plane grid or groove type grid, source electrode and
There can be field plate on grid；
3. wherein at least there is a p type island region domain to be placed near source region inner periphery；
4. wherein at least there is a p type island region domain to be placed between grid and drain electrode and relatively close to grid；
5. above-described p type island region domain, its size width for 0.2um between 5.0um, extended to from semiconductor epitaxial layer surface
Nitrogenize under Gallium surfaces, depth is more than 0.1 micron, and source metal and the contact portion in above-described p type island region domain are metal/P
The Ohmic contact in type area or close to Ohmic contact, these p type island region domains are to pass through ion implanting or immersion ion in technique
What injection (Plasma Immersion Ion Implantation) or outer layer growth method were formed.
9. one kind nitridation Gallium radical heterojunction field effect transistor structures, including following characteristics：
1. an at least slice width forbidden band barrier layer AlGaN and small gap material GaN forms I type hetero-junctions, two-dimensional electron gas
(2DEG) is located at the GaN sides of heterojunction boundary, and the wherein thickness of broad stopband barrier layer AlGaN is 10nm to 50nm, low energy gap
Material GaN is unintentional doping, its thickness is 1um to 5um；
2. epi-layer surface has source electrode, grid and a drain electrode, gate structure can be plane grid or groove type grid, source electrode and
There can be field plate on grid；
3. wherein at least there is a p type island region domain to be placed on source region near its circumference；
4. wherein at least some p type island region domain between grid and drain electrode is the p type island region being connected in source region, this connection is
Via p type island region, , And are non-to be connected via metal connecting, this p-type of p type island region for being used to connect from grid close to one side of drain electrode
Touch the p type island region that area is extended between grid and source electrode.
10. according to the p type island region domain described in claim 9 its (3) and (4), its size width is 0.2um to 5.0um, from semiconductor
Epi-layer surface is extended under nitridation Gallium surfaces, and depth is more than 0.1 micron, and source metal and the contact portion in p type island region domain are
The Ohmic contact of metal/p type island region or close to Ohmic contact, these p type island region domains are to pass through ion implanting or submergence in technique
What formula ion implanting (Plasma Immersion Ion Implantation) or outer layer growth method were formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610907438.7A CN107958930A (en) | 2016-10-17 | 2016-10-17 | One kind nitridation Gallium radical heterojunction field effect transistor structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610907438.7A CN107958930A (en) | 2016-10-17 | 2016-10-17 | One kind nitridation Gallium radical heterojunction field effect transistor structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107958930A true CN107958930A (en) | 2018-04-24 |
Family
ID=61954500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610907438.7A Pending CN107958930A (en) | 2016-10-17 | 2016-10-17 | One kind nitridation Gallium radical heterojunction field effect transistor structures |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107958930A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270478A (en) * | 2021-04-23 | 2021-08-17 | 北京大学深圳研究生院 | Compound semiconductor follow current power transistor |
| CN114823851A (en) * | 2022-04-15 | 2022-07-29 | 晶通半导体(深圳)有限公司 | Gallium nitride reverse conducting transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130075790A1 (en) * | 2009-04-21 | 2013-03-28 | Infineon Technologies Austria Ag | Semiconductor including lateral hemt |
| JP2013140824A (en) * | 2011-12-28 | 2013-07-18 | Rohm Co Ltd | Semiconductor device and method of manufacturing the same |
| CN103367439A (en) * | 2012-03-30 | 2013-10-23 | 英飞凌科技奥地利有限公司 | Gate overvoltage protection for compound semiconductor transistors |
| US9368622B1 (en) * | 2010-06-04 | 2016-06-14 | Hrl Laboratories, Llc | Stitched gate GaN HEMTs |
-
2016
- 2016-10-17 CN CN201610907438.7A patent/CN107958930A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130075790A1 (en) * | 2009-04-21 | 2013-03-28 | Infineon Technologies Austria Ag | Semiconductor including lateral hemt |
| US9368622B1 (en) * | 2010-06-04 | 2016-06-14 | Hrl Laboratories, Llc | Stitched gate GaN HEMTs |
| JP2013140824A (en) * | 2011-12-28 | 2013-07-18 | Rohm Co Ltd | Semiconductor device and method of manufacturing the same |
| CN103367439A (en) * | 2012-03-30 | 2013-10-23 | 英飞凌科技奥地利有限公司 | Gate overvoltage protection for compound semiconductor transistors |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270478A (en) * | 2021-04-23 | 2021-08-17 | 北京大学深圳研究生院 | Compound semiconductor follow current power transistor |
| CN114823851A (en) * | 2022-04-15 | 2022-07-29 | 晶通半导体(深圳)有限公司 | Gallium nitride reverse conducting transistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7825434B2 (en) | Nitride semiconductor device | |
| JP5190923B2 (en) | Nitride semiconductor transistor having GaN as channel layer and manufacturing method thereof | |
| KR101285598B1 (en) | Nitride baced heterostructure semiconductor device and manufacturing method thereof | |
| CN107958939A (en) | One kind nitridation Gallium base heterojunction Schottky diode structures | |
| CN109873034B (en) | Normally-off HEMT power device for depositing polycrystalline AlN and preparation method thereof | |
| CN106783961A (en) | A kind of AlGaN/GaN HFETs with part p-type GaN cap | |
| CN110690273B (en) | Transverse GaN-based enhanced junction field effect transistor device and preparation method thereof | |
| CN109950324A (en) | III group-III nitride diode component of p-type anode and preparation method thereof | |
| KR101103774B1 (en) | Nitride based semiconductor device employing recessed gate edge structure and method for fabricating the same | |
| CN107958930A (en) | One kind nitridation Gallium radical heterojunction field effect transistor structures | |
| CN112201689B (en) | Field effect transistor based on III-nitride heterojunction and preparation method thereof | |
| CN110518067B (en) | Heterojunction field effect transistor based on channel array and manufacturing method and application thereof | |
| CN107958931A (en) | One kind nitridation Gallium base heterojunctions field-effect transistor structure of resistance to breakdown | |
| US20210202728A1 (en) | Enhancement-mode high-electron-mobility transistor | |
| CN105826369A (en) | Novel enhanced III-V heterojunction field effect transistor | |
| CN111211176B (en) | Gallium nitride-based heterojunction integrated device structure and manufacturing method | |
| CN113363319B (en) | Normally-off gallium oxide based MIS-HFET device | |
| KR20190106254A (en) | Structure and Fabrication Method of High Voltage Schottky Barrier Device using Bandgap and Doping Modulation Technology | |
| CN114843337A (en) | Gallium nitride high electron mobility transistor with double-gate structure and manufacturing method thereof | |
| CN110265485B (en) | Transverse transistor with Schottky barrier AlGaN/GaN heterojunction and manufacturing method thereof | |
| CN111682067A (en) | High electron mobility transistor with lateral depletion region | |
| CN106876458B (en) | Groove gate enhanced AlGaN/GaN heterojunction field effect transistor | |
| CN107958925A (en) | One kind nitridation Gallium base heterojunctions Schottky diode structure of resistance to breakdown | |
| WO2024000431A1 (en) | Semiconductor device and manufacturing method therefor | |
| CN116613065B (en) | Enhanced gallium nitride HEMT device and manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180424 |
|
| WD01 | Invention patent application deemed withdrawn after publication |