CN107914213A - A kind of chemical and mechanical grinding method - Google Patents
A kind of chemical and mechanical grinding method Download PDFInfo
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- CN107914213A CN107914213A CN201610885628.3A CN201610885628A CN107914213A CN 107914213 A CN107914213 A CN 107914213A CN 201610885628 A CN201610885628 A CN 201610885628A CN 107914213 A CN107914213 A CN 107914213A
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- grinding
- rotation direction
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- setting range
- rotation
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a kind of chemical and mechanical grinding method.The described method includes：Semiconductor crystal wafer is provided；The first chemical mechanical grinding is performed to the semiconductor crystal wafer on grinding table, wherein, the rotation direction of the rotation direction of wafer, the rotation direction of grinding mat trimmer and grinding table carrying grinding pad is not exactly the same.By controlling the not exactly the same of each component rotation direction on grinding table, milling time is effectively reduced, reduces grinding pressure, and the corresponding rotating speed of grinding mat trimmer, pressure and time.So as to effectively improve grinding rate, increase yield；Increase grinding pad, grinding head, ground slurry utilization rate and life cycle, reduce production cost.The lapping liquid accessory substance of grinding pad surface can also be effectively cleared up at the same time, reduce the product defectses such as corresponding scratch.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of chemical and mechanical grinding method.
Background technology
With the diminution of characteristic size in ic manufacturing process and the increase of metal interconnection, to wafer surface flatness
Requirement it is also higher and higher.Chemical mechanical grinding (CMP) is the technology by mechanical lapping and chemical attack combination, is most to have at present
The wafer planarization method of effect.Chemical mechanical grinding clamps wafer using rotating grinding head, and by it with certain pressure pressure
On rotating grinding pad, by the effect of ground slurry, crystal column surface is set to be realized under the collective effect of chemistry and machinery flat
Smoothization.
How in chemical mechanical grinding, improve grinding rate, increase grinding pad, grinding head and ground slurry utilization rate and
Life cycle, reduces production cost, and it is semiconductor system to reduce ground slurry residual and improve the yield of chemical mechanical grinding and quality
Make the problem of manufacturer is concerned about with paying attention to for a long time.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features, do not mean that the protection domain for attempting to determine technical solution claimed more.
In order to lift the grinding rate of chemical mechanical grinding, increase grinding pad, grinding head and ground slurry utilization rate and life
The cycle is ordered, reduces production cost, increases yield, the present invention provides a kind of chemical and mechanical grinding method, the described method includes：
Semiconductor crystal wafer is provided；The first chemical mechanical grinding is performed to the semiconductor crystal wafer on grinding table, wherein, it is brilliant
The rotation direction that round rotation direction, the rotation direction of grinding mat trimmer and grinding table carries grinding pad is not exactly the same.
Optionally, the grinding mat trimmer rotation direction is identical with the rotation direction of wafer, grinding table carrying grinding pad
Rotate in a reverse direction.
Optionally, the wafer velocity of rotation setting range is 45~50rpm/min.
Optionally, the downward pressure that grinding head applies it, pressure setting are also suffered from when the wafer rotates
Scope is 4~4.5psi.
Optionally, the grinding mat trimmer velocity of rotation setting range is 20~25rpm/min.
Optionally, the grinding mat trimmer pressure setting range is 4.5~4.65psi, and control time setting range is
30~35sec.
Optionally, the speed setting range that the grinding table carrying grinding pad rotates is 65~70rpm/min.
Optionally, the ground slurry dispensing device dispatching ground slurry flow rate set scope is 160~165ml/min.
Optionally, the rotation direction of grinding table carrying grinding pad is different from the rotation direction of wafer, grinding mat trimmer
Rotation direction controls in two stages：First stage controls the rotation direction phase of grinding mat trimmer and grinding table carrying grinding pad
Together, second stage control grinding mat trimmer is identical with the rotation direction of wafer.
Optionally, the velocity of rotation setting range of the wafer is 40~45rpm/min.
Optionally, the downward pressure that grinding head applies it, pressure setting are also suffered from when the wafer rotates
Scope is 4~4.25psi.
Optionally, the velocity of rotation setting range of the grinding table carrying grinding pad is 60~65rpm/min.
Optionally, the rotation direction of the grinding mat trimmer controls in two stages, and first stage control grinding pad is repaiied
When whole device is identical with the rotation direction of grinding table carrying grinding pad, velocity of rotation setting range is 30~35rpm/min, and pressure is set
It is 4.85~5.15psi to determine scope, and control time setting range is 10~15sec.
Optionally, the rotation direction of the grinding mat trimmer controls in two stages, and second stage control grinding pad is repaiied
When whole device is identical with the rotation direction of wafer, velocity of rotation setting range is 20~22rpm/min, pressure setting range for 4~
4.25psi, control time setting range are 10~15sec.
Optionally, the ground slurry dispensing device dispatching ground slurry flow rate set scope is 160~165ml/min.
In conclusion chemical and mechanical grinding method having thus described the invention, in chemical mechanical milling tech, passes through
Control each component on grinding plate to turn to, that is, control rotation direction, the rotation side of grinding table carrying grinding pad of wafer to be ground
To and grinding mat trimmer rotation direction it is not exactly the same, effectively reduce milling time, reduce grinding pressure, and
The corresponding rotating speed of grinding mat trimmer, pressure and time.So as to effectively improve grinding rate, increase yield；Increase grinding pad, grind
Bistrique, ground slurry utilization rate and life cycle, reduce production cost.The lapping liquid of grinding pad surface can also be effectively cleared up at the same time
Accessory substance, reduces the product defectses such as corresponding scratch.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Fig. 1 is that each component of lapping device operates schematic diagram in chemical mechanical grinding involved in the prior art；
Fig. 2 is the chemical mechanical milling tech involved in the manufacturing process of semiconductor devices in two embodiments of the invention
Indicative flowchart；
Fig. 3 A~3C are the chemical mechanical grinding that semiconductor devices is related in the fabrication process in two embodiments of the invention
Correlation step in the sectional view of structure that is formed；
Fig. 4 is that each component of lapping device operates schematic diagram in chemical mechanical grinding involved in one embodiment of the present of invention；
Fig. 5 is each component operating signal of lapping device in chemical mechanical grinding involved in an alternative embodiment of the invention
Figure.
Embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed description will be proposed in following description, to illustrate of the present inventionization
Learn mechanical grinding method.Obviously, execution of the invention is not limited to the specific details that the technical staff of semiconductor applications is familiar with.
Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, the present invention can also have other realities
Apply mode.
It should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Intention includes plural form.Additionally, it should be understood that when using term "comprising" and/or " comprising " in the present specification
When, it is indicated there are the feature, entirety, step, operation, element and/or component, but does not preclude the presence or addition of one or more
A other features, entirety, step, operation, element, component and/or combinations thereof.
Now, exemplary embodiment according to the present invention is more fully described with reference to the accompanying drawings.However, these exemplary realities
Applying example can be implemented with many different forms, and should not be construed to be limited solely to the embodiments set forth herein.Should
These embodiments that are to provide understood are in order to enable disclosure of the invention is thoroughly and complete, and by these exemplary implementations
The design of example is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, the thickness in layer and region is exaggerated
Degree, and make identical element is presented with like reference characters, thus description of them will be omitted.
It will be ground to specific embodiment with copper enchasing structure below and explain principle according to the present invention.Embodiment with
Copper enchasing structure is ground to example, it is not intended to be defined technical scheme, it is clear that technology of the invention
Scheme can also be applied to it is other need carry out chemical mechanical grinding technique in.
In the copper metallization technology of dual damascene, substantial amounts of copper and tantalum barrier layer have been removed using chemical mechanical grinding
Through as indispensable committed step in method, semi-conductor device manufacturing method.In the chemical mechanical milling tech of copper metal, one
As using two steps grinding method：The first step mainly removes substantial amounts of layers of copper, uses in second step grinding and is moved with very low copper
Except the ground slurry of efficiency removes tantalum barrier layer.It is ground when taking two step Ginding process effectively to prevent from grinding only with a step
Degree causes copper loss mistake to cause copper butterflyization and oxide etch effect.First step grinding is removal speed in whole copper process of lapping
Leading step；Before being ground using second step, it is necessary to the slurry that all copper and the first step are ground is removed completely from surface,
Because easily aoxidized in the process of lapping of copper metal, and residual of the ground slurry of first step grinding on surface easily causes recessed
Groove corner deposition by-products are so as to produce huge scratch defect.Therefore the removal of slurry during the first step is ground, what copper removed
Speed is the grinding quality and the vital influence factor of speed of whole copper process of lapping.
In the prior art, using traditional chemical-mechanical grinding device, by grinding head, grinding pad, grinding mat trimmer, with
And the ground slurry dispensing device of dispatching slurry forms its basic element of character, as shown in Figure 1, wafer to be ground 101 is placed in grinding head
Between 102 and grinding pad 103, the rotation direction of wafer 101 to be ground is consistent with the rotation direction of grinding pad 103 (as used
Counterclockwise rotate), wherein grinding pad is carried on grinding table and is rotated with the rotation of grinding table, ground slurry dispensing device
For 104 dispatching slurries to grinding pad surface, grinding mat trimmer 105 uses the rotating disk of diamond coated, its rotation direction and crystalline substance
Circle is consistent with the rotation direction of grinding table carrying grinding pad.One general embodiment：Wafer 101 to be ground is with side counterclockwise
To rotation, speed setting 50~60rpm/min of scope (rpm), while wafer 101 is subject to grinding head 102 to apply one to it
A downward pressure, 5~6psi of pressure setting range (pound per square inch, the unit being well known to those skilled in the art)；
Grinding pad 103 is carried on grinding table to be rotated in a counterclockwise direction with grinding table, velocity of rotation setting range for 100~
110rpm/min；Grinding mat trimmer rotates in a counterclockwise direction, and velocity of rotation setting range is 30~35rpm/min, at the same time
Grinding mat trimmer pressure limit is set as 4.85~5.15psi, 40~45sec of control grinding mat trimmer run time
(second)；Ground slurry dispensing device 104 dispenses 140~150ml/min of ground slurry flow velocity (milliliter is per minute).In above-mentioned setting
Under, it is 100~110sec to carry out the chemical mechanical grinding time that the first grinding copper removes.
In order to lift the grinding rate of chemical mechanical grinding, increase grinding pad, grinding head and ground slurry utilization rate and life
The cycle is ordered, reduces production cost, increases yield, the present invention provides a kind of chemical and mechanical grinding method, the described method includes：
Semiconductor crystal wafer is provided；The first chemical mechanical grinding is performed to the semiconductor crystal wafer on grinding table, wherein, it is brilliant
The rotation direction that round rotation direction, the rotation direction of grinding mat trimmer and grinding table carries grinding pad is not exactly the same.
Optionally, the grinding mat trimmer rotation direction is identical with the rotation direction of wafer, grinding table carrying grinding pad
Rotate in a reverse direction.
Optionally, the rotation direction of grinding table carrying grinding pad is different from the rotation direction of wafer, grinding mat trimmer
Rotation direction controls in two stages：First stage controls the rotation direction phase of grinding mat trimmer and grinding table carrying grinding pad
Together, second stage control grinding mat trimmer is identical with the rotation direction of wafer.
Chemical and mechanical grinding method having thus described the invention, by controlling wafer rotation direction, grinding table carrying is ground
Grind pad rotation direction and grinding mat trimmer rotation direction it is not exactly the same, effectively reduce milling time, reduce
Grinding pressure, and the corresponding rotating speed of grinding mat trimmer, pressure and time.So as to effectively improve grinding rate, increase yield；
Increase grinding pad, grinding head, ground slurry utilization rate and life cycle, reduce production cost.It can also effectively clear up grinding at the same time
The lapping liquid accessory substance on surface is padded, reduces the product defectses such as corresponding scratch.Specific implementation is described in detail referring to following
Embodiment.
Embodiment one
With reference to figure 2, Fig. 3 A~3C and Fig. 4 come describe one embodiment of the present of invention proposition a kind of chemical mechanical grinding side
Method, wherein, Fig. 2 is the schematic flow of the chemical mechanical milling tech involved in the manufacturing process of semiconductor devices in embodiment
Figure, Fig. 3 A~3C be one embodiment of the present of invention a kind of semiconductor devices in chemical mechanical planarization process correlation step shape
Into structure sectional view, Fig. 4, which is that the present embodiments relate to the operating of each component of lapping device in the first chemical mechanical grinding, to be shown
It is intended to.
Perform step S1：Semiconductor substrate (i.e. semiconductor crystal wafer) is provided, formed with to be ground in the Semiconductor substrate
Bimetal mosaic structure.
Such as Fig. 3 A, show the Semiconductor substrate 300 in one embodiment of the invention and be sequentially formed in semiconductor lining
Bimetal mosaic structure on bottom 300.The present embodiment is ground to example with copper enchasing structure, it is not intended to the present invention's
Technical solution is defined, it is clear that technical scheme can also be applied to other works for needing to carry out chemical mechanical grinding
In skill.
The Semiconductor substrate may include any semi-conducting material, this semi-conducting material may include but be not limited to：Si、SiC、
SiGe, SiGeC, Ge alloy, GeAs, InAs, InP, NDC (Nitrogen dopped Si1icon Carbite, N doping
Carborundum), and other III-V or group Ⅱ-Ⅵ compound semiconductor.In one embodiment of the invention, Semiconductor substrate
300 be Si materials.
The bimetal mosaic structure makes course, forms gold in Semiconductor substrate 300 using dual damascene process
Belong to the various suitable technologies that the process of the groove of interconnection structure 301 is familiar with by those skilled in the art, do not make herein
Repeat.
Formed with diffusion impervious layer 302 and Ni metal layer 303, diffusion barrier in 301 groove of metal interconnection structure
Layer can use Ta, TaN or Ta and TaN to combine, and metal layer and diffusion impervious layer use physical gas-phase deposition or plating
Technique, or other suitable technologies familiar to those skilled in the art, this will not be repeated here.Specifically, in this hair
Diffusion impervious layer 302 uses the combination (Ta/TaN) of Ta and TaN in bright one embodiment.
Perform step S2：The first chemical mechanical grinding is performed to remove the metal layer outside the mosaic texture groove, and is stopped
Barrier layer is terminated in, wherein, turn of the rotation direction of wafer, the rotation direction of grinding mat trimmer and grinding table carrying grinding pad
Dynamic direction is different.
Exemplary, the grinding mat trimmer rotation direction is identical with the rotation direction of wafer, grinding table carrying grinding
Pad rotates in a reverse direction.
Exemplary, as shown in figure 4, wafer to be ground 401 rotates in a counterclockwise direction, grinding mat trimmer 405 is with inverse
Clockwise rotates, and grinding table carrying grinding pad 403 rotates in a clockwise direction.Ground specifically, wafer 401 to be ground is placed in
Between bistrique 402 and grinding pad 403, wafer 401 to be ground rotates in a counterclockwise direction, velocity of rotation setting range for 45~
50rpm/min, simultaneous grinding first 402 produce a downward pressure to wafer 401, and pressure setting range is 4~4.5psi；Grind
Mill dresser 405 rotates in a counterclockwise direction, and speed setting scope is 20~25rpm/min, simultaneous grinding dresser
Pressure setting range is 4.5~4.65psi, control the time setting range of grinding mat trimmer finishing grinding pad for 30~
35sec；Grinding table carrying grinding pad 403 rotates in a clockwise direction, and speed setting scope is 65~70rpm/min；Slurry
It is 160~165ml/min to expect that dispensing device 404 dispenses ground slurry flow rate set scope.Under above-mentioned setting, carry out the first step and grind
It is 80~90sec to grind the chemical mechanical grinding time that copper removes.
Suitable for the first grinding plate copper wiring corase grinding, grinding table carrying grinding pad turns this method in a clockwise direction
Dynamic, the rotation direction of the rotation of rotation direction and grinding mat trimmer and grinding head control wafer is on the contrary, grinding can be reduced
Pressure, increase copper metal layer remove efficiency, effectively reduce milling time；The corresponding of grinding mat trimmer can be reduced at the same time to turn
Speed, sets pressure and control time.The reduction of milling time effectively improves grinding rate, increases yield；By being repaiied to grinding pad
The reduction of whole device speed setting, pressure setting reduce, and are effectively increased grinding pad, grinding head, ground slurry utilization rate and Life Cycle
Phase, reduces production cost.
As shown in Figure 3B, it is the structural representation of the wafer after the unnecessary copper outside the grinding removal groove of the embodiment
Figure, performs the first chemical mechanical grinding, grinding removes the unnecessary copper outside the groove of the wafer, and grinds and terminate at Ta/
TaN diffusion impervious layers 302.
Step S3：The second chemical mechanical grinding is performed to remove the diffusion impervious layer outside the groove, and is stopped at described
Bimetal mosaic structure hard mask layer.
As shown in Figure 3 C, the grinding for the embodiment removes the wafer after the Ta/TaN diffusion impervious layers 302 outside groove
Structure diagram, which removes diffusion impervious layer according to the second step grinding in the method for conventional formation copper interconnection structure
Process carry out, therefore not to repeat here.
Embodiment two
Fig. 2, Fig. 3 A~3C and Fig. 5 show a kind of chemical mechanical grinding side that an alternative embodiment of the invention proposes
Method, wherein, Fig. 2 is the schematic flow of the chemical mechanical milling tech involved in the manufacturing process of semiconductor devices in embodiment
Figure, Fig. 3 A~3C be one embodiment of the present of invention a kind of semiconductor devices in chemical mechanical planarization process correlation step shape
Into structure sectional view, Fig. 5, which is that the present embodiments relate to the operating of each component of lapping device in the first chemical mechanical grinding, to be shown
It is intended to.
The present embodiment and the embodiment that embodiment one provides are essentially identical, comprise the following steps：S1：Semiconductor is provided
Substrate (i.e. semiconductor crystal wafer), formed with bimetal mosaic structure to be ground in the Semiconductor substrate (referring to Fig. 3 A)；S2：Hold
The first chemical mechanical grinding of row stops at barrier layer to remove the metal layer outside the mosaic texture groove, wherein, wafer
The rotation direction of rotation direction, the rotation direction of grinding mat trimmer and grinding table carrying grinding pad is different (referring to Fig. 3 B)；
S3：The second chemical mechanical grinding is performed to remove the diffusion impervious layer outside the groove, and stops at the metal hard mask layer
(referring to Fig. 3 C).Both difference is, the present embodiment in S2 steps are performed, the first chemical mechanical grinding of execution with
When removing the metal layer outside the mosaic texture groove, and stopping at barrier layer, rotation direction, the grinding pad finishing of wafer are controlled
The difference of the rotation direction of rotation direction and grinding table the carrying grinding pad of device is different from the control mode of embodiment one；At this
In embodiment, the rotation direction of grinding table carrying grinding pad is different from the rotation direction of wafer, the rotation side of grinding mat trimmer
To controlling in two stages：First stage controls grinding mat trimmer identical with the rotation direction of grinding table carrying grinding pad, the
Two-stage control grinding mat trimmer is identical with the rotation direction of wafer.For sake of simplicity, for embodiment one (Fig. 2, Fig. 3 A~
Embodiment shown in 3C and Fig. 4) the identical step that shows, specifically described omitting, those skilled in the art is referring to Fig. 5
And above description is combined it will be appreciated that the concrete operations mode of identical step.Therefore, hereafter only to different step S2 into
Row is described in detail.
Perform step S2：The first chemical mechanical grinding is performed to remove the metal layer outside the mosaic texture groove, and is stopped
Barrier layer is terminated in, wherein, turn of the rotation direction of wafer, the rotation direction of grinding mat trimmer and grinding table carrying grinding pad
Dynamic direction is different.
Exemplary, the rotation direction of the grinding table carrying grinding pad is different from the rotation direction of wafer, and grinding pad is repaiied
The rotation direction of whole device controls in two stages：First stage controls the rotation of grinding mat trimmer and grinding table carrying grinding pad
Direction is identical, and second stage control grinding mat trimmer is identical with the rotation direction of grinding head.
Exemplary, as shown in figure 5, grinding table carrying grinding pad 503 rotates in a counterclockwise direction；Wafer 501 to be ground
Rotate in a clockwise direction；Grinding mat trimmer 505 first rotates in same direction with grinding table carrying grinding pad in a counterclockwise direction, after with
Rotate in same direction clockwise with wafer to be ground.Specifically, by wafer 501 to be ground be placed in grinding head 502 and grinding pad 503 it
Between, wafer 501 to be ground rotates in a counterclockwise direction, and speed setting is 40~45rpm/min, and simultaneous grinding first 502 is to wafer
501 produce a downward pressure, and pressure setting range is 4~4.25psi；Grinding pad 503 is carried on grinding table with grinding
Platform rotates in a clockwise direction, and speed setting scope is 60~65rpm/min；Ground slurry dispensing device 504 dispenses ground slurry
Flow rate set scope is 160~165ml/min；First stage control grinding mat trimmer 505 first in a counterclockwise direction with grinding
Platform carrying grinding pad rotates in same direction, and speed setting scope is 30~35rpm/min, and pressure setting range is 4.85~5.15psi,
Control time setting range is 10~15sec；Second stage control grinding mat trimmer 505 in a clockwise direction with wafer to be ground
Rotate in same direction, speed setting scope is 20~22rpm/min, and pressure setting range is 4~4.25psi, and control time sets model
Enclose for 10~15sec.Under above-mentioned setting, it is 75~80sec to carry out the chemical mechanical grinding time that the first grinding copper removes.
This method is suitable for the first grinding plate copper wiring corase grinding, compared with embodiment one (Fig. 5 is shown), control grinding
The rotation direction of dresser and the rotation direction of grinding table carrying grinding pad and the rotation direction phase of grinding head control wafer
Instead, grinding pressure can be further reduced, increase copper metal layer removes efficiency, further reduces milling time；It can drop at the same time
The corresponding rotating speed of low grinding mat trimmer, sets pressure and control time.Rotation by setting grinding mat trimmer is divided to two
Stage completes, moreover it is possible to which the effectively lapping liquid accessory substance of cleaning grinding pad surface, reduces the product defectses such as corresponding scratch.
The reduction of milling time effectively lifts grinding rate, increases yield；By to grinding mat trimmer speed setting
Reduce, pressure setting reduces, and is effectively increased grinding pad, grinding head, ground slurry utilization rate and life cycle, reduction are produced into
This.
In conclusion chemical and mechanical grinding method according to the present invention, in copper grinding technics, passes through the chemistry of control first
Each component turns on mechanical lapping platform, that is, controls rotation direction, the rotation side of grinding table carrying grinding pad of wafer to be ground
To and grinding mat trimmer rotation direction it is not exactly the same, effectively reduce milling time, reduce grinding pressure, and
The corresponding rotating speed of grinding mat trimmer, pressure and time.So as to effectively carry grinding rate, increase yield；Increase grinding pad, grinding
Head, ground slurry utilization rate and life cycle, reduce production cost.The lapping liquid pair of grinding pad surface can also be effectively cleared up at the same time
Product, reduces the product defectses such as corresponding scratch.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, teaching according to the present invention can also be made more kinds of
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (15)
- A kind of 1. chemical and mechanical grinding method, it is characterised in that the described method includes：Semiconductor crystal wafer is provided；The first chemical mechanical grinding is performed to the semiconductor crystal wafer on grinding table, wherein, the rotation direction of wafer, grinding pad The rotation direction of rotation direction and grinding table the carrying grinding pad of trimmer is not exactly the same.
- 2. the method as described in claim 1, it is characterised in that the rotation direction of grinding mat trimmer and the rotation direction of wafer Identical, grinding table carrying grinding pad rotates in a reverse direction.
- 3. method as claimed in claim 2, it is characterised in that the wafer velocity of rotation setting range is 45~50rpm/ min。
- 4. method as claimed in claim 2, it is characterised in that the wafer also suffers from what grinding head applied it when rotating One downward pressure, pressure setting range are 4~4.5psi.
- 5. method as claimed in claim 2, it is characterised in that grinding mat trimmer velocity of rotation setting range for 20~ 25rpm/min。
- 6. method as claimed in claim 2, it is characterised in that the grinding mat trimmer pressure setting range for 4.5~ 4.65psi, control time setting range are 30~35sec.
- 7. method as claimed in claim 2, it is characterised in that the velocity of rotation setting that the grinding table carrying grinding pad rotates Scope is 65~70rpm/min.
- 8. method as claimed in claim 2, it is characterised in that the ground slurry dispensing device dispenses ground slurry flow rate set Scope is 160~165ml/min.
- 9. the method as described in claim 1, it is characterised in that the rotation direction of grinding table carrying grinding pad and the rotation of wafer Direction is different, and the rotation direction of grinding mat trimmer controls in two stages：First stage controls grinding mat trimmer and grinding The rotation direction of platform carrying grinding pad is identical, and second stage control grinding mat trimmer is identical with the rotation direction of wafer.
- 10. method as claimed in claim 9, it is characterised in that the velocity of rotation setting range of the wafer for 40~ 45rpm/min。
- 11. method as claimed in claim 10, it is characterised in that the wafer also suffers from grinding head when rotating and applies to it A downward pressure, pressure setting range is 4~4.25psi.
- 12. method as claimed in claim 9, it is characterised in that the velocity of rotation setting model of the grinding table carrying grinding pad Enclose for 60~65rpm/min.
- 13. method as claimed in claim 9, it is characterised in that the rotation direction of the grinding mat trimmer is in two stages Control, when the first stage controls grinding mat trimmer identical with the rotation direction of grinding table carrying grinding pad, velocity of rotation setting Scope is 30~35rpm/min, and pressure setting range is 4.85~5.15psi, and control time setting range is 10~15sec.
- 14. method as claimed in claim 9, it is characterised in that the rotation direction of the grinding mat trimmer is in two stages Control, second stage control grinding mat trimmer it is identical with wafer rotation direction when, velocity of rotation setting range be 20~ 22rpm/min, pressure setting range are 4~4.25psi, and control time setting range is 10~15sec.
- 15. method as claimed in claim 9, it is characterised in that the ground slurry dispensing device dispatching ground slurry flow velocity is set It is 160~165ml/min to determine scope.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610885628.3A CN107914213B (en) | 2016-10-10 | 2016-10-10 | Chemical mechanical polishing method |
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| CN201610885628.3A CN107914213B (en) | 2016-10-10 | 2016-10-10 | Chemical mechanical polishing method |
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| CN107914213B CN107914213B (en) | 2020-06-05 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114346893A (en) * | 2022-01-13 | 2022-04-15 | 上海华虹宏力半导体制造有限公司 | Chemical mechanical polishing method |
| CN114734372A (en) * | 2022-03-28 | 2022-07-12 | 北京烁科精微电子装备有限公司 | Wafer grinding method |
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| CN114346893A (en) * | 2022-01-13 | 2022-04-15 | 上海华虹宏力半导体制造有限公司 | Chemical mechanical polishing method |
| CN114734372A (en) * | 2022-03-28 | 2022-07-12 | 北京烁科精微电子装备有限公司 | Wafer grinding method |
Also Published As
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| CN107914213B (en) | 2020-06-05 |
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