CN107863413B - A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof - Google Patents
A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof Download PDFInfo
- Publication number
- CN107863413B CN107863413B CN201711063163.4A CN201711063163A CN107863413B CN 107863413 B CN107863413 B CN 107863413B CN 201711063163 A CN201711063163 A CN 201711063163A CN 107863413 B CN107863413 B CN 107863413B
- Authority
- CN
- China
- Prior art keywords
- layer
- layers
- shaped
- component
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 17
- 238000011982 device technology Methods 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 230000008901 benefit Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 230000001737 promoting effect Effects 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000002459 sustained effect Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 125
- 230000005684 electric field Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000752 ionisation method Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The present invention relates to the technical fields of semiconductor ultraviolet electric explorer, more particularly, to blind ultraviolet snowslide heterojunction phototransistor detector of a kind of AlGaN base day and preparation method thereof.A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector, wherein, including substrate, the external regular way of extension (or molecular beam epitaxial growth method) is deposited using Metallo-Organic Chemical Vapor, the unintentional doping low temperature AI N buffer layer successively grown on substrate, unintentional doped high temperature AlN buffer layer, unintentional doping AlmGa1‑mN Window layer, N-shaped AlmGa1‑mN layers, N-shaped AlnGa1‑nN component graded layer, unintentional doping AlaGa1‑aN absorbs dynode layer, unintentional doping AlbGa1‑bN absorbs dynode layer, unintentional doping AlcGa1‑cN absorbs dynode layer, Mg doped p type AlxGa1‑xN layers, unintentional doping AlxGa1‑xN layers, N-shaped AlyGa1‑yN component graded layer and N-shaped AlzGa1‑zN layers, and the last N-shaped Ohm contact electrode deposited using device technology.
Description
Technical field
The present invention relates to the technical fields of semiconductor ultraviolet electric explorer, blind more particularly, to a kind of AlGaN base day
Ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof.
Background technique
In recent years, with the development of information technology, the means that people capture ambient condition information and detect are more and more
Sample, UV photodetector starts to be widely used in the multiple fields such as military, civilian and scientific research, and people are to high-performance
The demand of UV photodetector is also increasingly enhanced.
Common UV photodetector is mainly Si base photodiode and the vacuum equipped with filter plate currently on the market
Electronics photomultiplier tube.Based on III nitride semiconductor (including binary compound GaN, AlN, ternary compound AlGaN,
InGaN, AlInN and quaternary compound AlInGaN) UV photodetector because the semiconductor material systems have direct band
The forbidden bandwidth of gap, multi-element compounds is continuously adjustable with change of component, so as to realize the blind (photoresponse section of intrinsic visible light
Only wavelength is in 280 ~ 363 nm ranges) and day blind (photoresponse cutoff wavelength is in 200 ~ 280 nm) ultraviolet detection, anti-radiation, resistance to evil
The features such as bad environment and be concerned, become current research hotspot.Wherein, GaN, AlGaN base based on Schottky and PN junction
Visible light is blind, the commercialization of solar blind UV electric diode detector.But since ultraviolet signal is in the transmission of atmosphere
Decaying is strong, in general, ultraviolet signal to be detected especially day blind UV signal be all it is very faint, thus
It is required that the photodetector of signal receiving end need to have optical gain.Currently, in the gain-type group III-nitride ultraviolet light of research and development
Electric explorer mainly has avalanche photodide (avalanche photodiode, APD) and heterojunction photovoltaic crystal
(heterojunction phototransistor, HPT) pipe detector.For wide bandgap semiconductor avalanche photodide,
It generally requires and applies high reverse biased at diode both ends, sufficiently strong electric field is generated in the depletion region of device, so that photoproduction
Electron-hole pair generates ionization by collision, i.e. avalanche multiplication effect under high field action, to obtain optical gain and sound inside height
Answer speed.For AlGaN base avalanche photodide, it usually needs the operating voltage of upper hectovolt generates avalanche breakdown,
And since there are higher dislocation density and device technology defects produced during the preparation process in AlGaN epitaxial layer, it will lead to
Avalanche photodide leakage current with higher (dark current) under high reverse biased work.In addition, based on p-i-n structure
Typical AlGaN ultraviolet avalanche photodiode, avalanche gain are produced by the impact ionization dominated jointly as electrons and holes
, there are higher excess noises.On the other hand, heterojunction phototransistor (NPN type) then be using incident light base area with
The depletion layer in current collection section or the photohole caused by base area are accumulated in base area, reduce emitter region-base area knot conduction band gesture
It builds, a large amount of electron transit base areas in emitter region is made to flow to collecting zone, form the collector current more much bigger than photogenerated current, from
And generate Induction boosting.AlGaN base heterojunction phototransistor has operating voltage low (usually less than 10 V), thus leakage current
It is smaller；Since HPT is not work under the conditions of avalanche breakdown, device reliability is relatively higher than APD, to defect in epitaxial material
The requirement of (based on dislocation) is relatively low；It is very sensitive etc. not a series of to operating voltage and temperature compared to APD device
Advantage.However, the optical gain of HPT belongs to Induction boosting, need the accumulation at emitter region-base area knot valence band barrier enough
Photohole could reduce conduction band barrier, to make emitter region electron transit base area, therefore its faint light (single photon) detects
Ability is lower than APD, and response speed is also slightly slow.In addition to this, current AlGaN base HPT detector generallys use Mg element doping and obtains
To p-type epitaxial layer, and Mg atom can be moved to because of High temperature diffusion in epitaxial process other epitaxial layers (including it is preceding to
With backward diffusion), the epitaxial layer especially grown after p-type layer will receive the preceding dual shadow to diffusion and Mg memory effect
It ringing, i.e., Mg atom can generate impurity compensation to the N-shaped epitaxial layer grown thereafter, and so that the pn-junction interface location in HPT is shifted,
The Impurity Distribution (influencing structure design) for not only influencing each functional layer, also will affect the crystalline quality of epitaxial layer, final to deteriorate
The performance of detector.
Summary of the invention
For leakage current is big under high reverse bias voltages existing for existing AlGaN base APD, the big (electronics of snowslide excess noise
With the common triggering avalanche in hole), snowslide operating voltage is high, works item in avalanche breakdown due to material epitaxial layers Dislocations density is high
Vulnerable problem under part；Faint light detection ability existing for HPT is low and response speed is relatively slow, p-type doping atom Mg diffusion
The problems such as deteriorating device performance, the purpose of the present invention is to provide a kind of snow containing Multiple heterostructures multiplication region and low temperature insert layer
Collapse heterojunction phototransistor.It is well known that the usual intensity of ultraviolet signal for needing to detect is faint, and in transmission process
Decaying is fast.The problems such as multiplication noise is high, leakage current is big and response speed is slow can seriously affect the detection performance of ultraviolet detector.
Therefore, a kind of detector is designed, the advantages of avalanche photodide and heterojunction phototransistor is combined, is avoided simultaneously
They the shortcomings that, have great importance.In addition, the High temperature diffusion of p-type epitaxial layer Mg atom is inhibited for AlGaN base HPT,
It is an important prerequisite for realizing the detection of AlGaN base HPT high-performance ultraviolet.
To achieve the above object, the technical scheme is that a kind of blind ultraviolet snowslide heterojunction photovoltaic crystalline substance of AlGaN base day
Body pipe detector, wherein including substrate, (or molecular beam epitaxy is raw using the Metallo-Organic Chemical Vapor deposition external regular way of extension
Regular way), the unintentional doping low temperature AI N buffer layer successively grown on substrate, unintentional doped high temperature AlN buffer layer, non-event
Meaning doping AlmGa1-mN Window layer, N-shaped AlmGa1-mN layers, N-shaped AlnGa1-nN component graded layer, unintentional doping AlaGa1-aN inhales
Receive dynode layer, unintentional doping AlbGa1-bN absorbs dynode layer, unintentional doping AlcGa1-cN absorbs dynode layer, Mg doped p type
AlxGa1-xN layers, unintentional doping AlxGa1-xN layers, N-shaped AlyGa1-yN component graded layer and N-shaped AlzGa1-zN layers, and it is last
The N-shaped Ohm contact electrode deposited using device technology.
Further, the substrate material is sapphire, AlN or other wide-band gap material substrates, and forbidden bandwidth needs
Solar blind UV incidence can be allowed to pass through.
The unintentional doping low temperature AI N buffer layer with a thickness of 10-100 nm；The unintentional doped high temperature AlN
Buffer layer with a thickness of 0.2-2.0 μm；AlN buffer layer reduces Material growth for alleviating lattice and coefficient of thermal expansion mismatch
Defect, stress and dislocation density, to guarantee that AlGaN epitaxial layer thereon has good crystal quality.
The unintentional doping AlmGa1-mAl component m=0.6 ~ 0.8 of N Window layer is used to a thickness of 0.1-1.0 μm
The lattice mismatch being sustained between AlN and upper layer AlGaN, while the window as substrate optical signals incidence；The N-shaped AlmGa1-mN
Al component m=0.6 ~ 0.8 of layer, with a thickness of 0.1-0.6 μm, electron concentration is 1-5 × 1018 cm-3, it is used as collecting zone and ohm
Contact electrode layer.
The N-shaped AlnGa1-nThe Al component n of N component graded layer lower layer Al component m and upper layer Al component a it
Between linear change, with a thickness of 10-30 nm, electron concentration is 1-5 × 1018 cm-3, for improve band offsets to light induced electron,
The blocking that hole transports, to be conducive to the collection of photo-generated carrier.
The unintentional doping AlaGa1-aAl component a=0.55 ~ 0.75 of N multiplication absorbed layer, with a thickness of 30-150
nm；The unintentional doping AlbGa1-bAl component b=0.47 ~ 0.67 of N multiplication absorbed layer, with a thickness of 30-150 nm；It is described non-
Deliberately doping AlcGa1-cAl component c=0.38 ~ 0.47 of N multiplication absorbed layer, with a thickness of 30-150 nm；Al component a, b and c's
Size relation should meet a > b > c；AlaGa1-aN layers, AlbGa1-bN layers and AlcGa1-cN layers of combination form Multiple heterostructures multiplication region, benefit
With Multiple heterostructures band structure discontinuity, inhibits the ionization by collision of electronics while promoting the ionization by collision in hole, can have
Effect reduces multiplication noise.
The p-type AlxGa1-xBetween N layers of Al component x=0.38 ~ 0.47, with a thickness of 100-200 nm, hole concentration
It is 3 × 1017-5×1018 cm-3, it is used as base area.
The unintentional doping AlxGa1-xN layers of Al component x=0.38 ~ 0.47, with a thickness of 10-50 nm, growth temperature
100 DEG C ~ 300 DEG C low compared with the growth temperature of p-type epitaxial layer are spent, for alleviating the diffusion of base area Mg foreign atom.
The N-shaped AlzGa1-zN layers of Al component z=0.5 ~ 0.6, with a thickness of 100-200 nm, electron concentration is in 1-5
×1018 cm-3Between, it is used as emitter region and Ohmic electrode contact layer；The N-shaped AlyGa1-yThe Al component y of N component graded layer exists
Linear change between x and z, with a thickness of 10-30 nm, electron concentration is 1-5 × 1018 cm-3；
N-shaped Ohm contact electrode be by vacuum evaporation technologies such as electron beam evaporation, sputterings, by Ti/Al/Ni or Pd, Pt,
The metal layer combinations such as Mo/Au, Cr/Pd/Au are deposited on N-shaped AlzGa1-zN layers and N-shaped AlmGa1-mN layer surface, and by alloy
What reason obtained.
Specifically, substrate material selects sapphire, AlN or other wide-band gap material substrates, forbidden bandwidth in the present invention
It needs that solar blind UV incidence can be allowed to pass through；It is unintentional doping low temperature AI N buffer layer with a thickness of 10 ~ 100 nm；It is unintentional to mix
Miscellaneous high-temperature AlN buffer layer with a thickness of 0.2 ~ 2 μm；AlN buffer layer reduces material for alleviating lattice and coefficient of thermal expansion mismatch
Defect, stress and the dislocation density of growth are expected, to guarantee that AlGaN epitaxial layer thereon has good crystal quality；Non- event
Meaning doping AlmGa1-mThe Al component m of N Window layer is in 0.6 ~ 0.8(60% ~ 80%) between, with a thickness of 0.1 ~ 1 μm, for being sustained
The AlN layers of window with the lattice mismatch of upper layer AlGaN and as substrate optical signals incidence；N-shaped AlmGa1-mN layers of Al group
Divide m between 0.6 ~ 0.8, with a thickness of 0.1 ~ 0.6 μm, electron concentration is 1 ~ 5 × 1018 cm-3Between, as collecting zone and ohm
Contact electrode layer；N-shaped AlnGa1-nThe Al component n of N component graded layer line between the Al component m of lower layer and the Al component a on upper layer
Property variation, with a thickness of 10 ~ 30 nm, electron concentration is 1 ~ 5 × 1017 cm-3Between, for improve band offsets to light induced electron,
The blocking that hole transports, to be conducive to the collection of photo-generated carrier；Unintentional doping AlaGa1-aThe Al component a of N multiplication absorbed layer
Between 0.55 ~ 0.75, with a thickness of 30-150 nm；Unintentional doping AlbGa1-bN double absorbed layer Al component b 0.47 ~
Between 0.67, with a thickness of 30-150 nm；Unintentional doping AlcGa1-cThe Al component c of N multiplication absorbed layer is between 0.38 ~ 0.47
(Al0.38Ga0.62N layers of ABSORPTION EDGE is 280 nm, and other each components are analogized as benchmark), with a thickness of 30-150 nm；Non- event
Meaning doping AlaGa1-aN layers, AlbGa1-bN layers and AlcGa1-cN layers of combination form Multiple heterostructures multiplication region, utilize AlGaN material Al
Change of component modulates the discontinuity of band structure, inhibits the ionization by collision of electronics while promoting the ionization by collision in hole,
Multiplication noise can be effectively reduced；P-type AlxGa1-xN layers of Al component x is between 0.38 ~ 0.47, with a thickness of 100-200 nm,
Hole concentration is 3 × 1017-5×1018 cm-3, it is used as base area；Unintentional doping AlxGa1-xN layers of Al component x=0.38 ~ 0.47,
With a thickness of 10-50 nm, growth temperature is 100 DEG C ~ 300 DEG C low compared with the growth temperature of p-type epitaxial layer, mixes for alleviating base area Mg
Heteroatomic diffusion；N-shaped AlzGa1-zN layers of Al component z is 0.5 ~ 0.6, and with a thickness of 100-200 nm, electron concentration is in 1-5
×1018 cm-3Between, it is used as emitter region and ohmic contact layer；N-shaped AlyGa1-yThe Al component y of N component graded layer is between x-z
Linear change, with a thickness of 10-30 nm, electron concentration is 1-5 × 1018 cm-3Between；N-shaped Ohm contact electrode is to pass through electronics
The vacuum evaporation technologies such as beam evaporation, sputtering deposit the metal layer combinations such as Ti/Al/Ni(or Pd, Pt, Mo)/Au, Cr/Pd/Au
In N-shaped AlzGa1-zN layers and N-shaped AlnGa1-nN layer surface, and obtained by alloy treatment.
AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector preparation method, wherein including following step
It is rapid:
Step 1: in N-shaped AlzGa1-zOne layer photoresist of spin coating on N layer, using the reticle for being furnished with component graphics, photoetching is aobvious
Movie queen exposes the partially n-type Al for needing to etchzGa1-zN layers, remaining undeveloped photoresist layer is as an exposure mask；
Step 2: using dry etching technology, etch the AlGaN epitaxial layer exposed, etching depth to N-shaped AlmGa1-mN
Layer forms step structure；
Step 3: the chip after dry etching being carried out at the quick thermal annealing process and wet process under the protection of pure nitrogen gas atmosphere
Reason restores the surface damage that dry etching is formed；
Step 4: using vacuum evaporation technology respectively in N-shaped AlzGa1-zN layers and N-shaped AlmGa1-mIt is steamed at N layers of mesa edge
Plating is contacted by the endless metal of metal layer combination；
Step 5: Alloying Treatment being carried out to endless metal combination layer, forms N-shaped Ohm contact electrode；
Step 6: device surface is cleaned using organic solution, deionized water, it is heavy using Plasma Enhanced Chemical Vapor thereafter
Area method or low-pressure chemical vapour deposition technique are coated with silica or nitride passivation film in device surface, and protection removes metal electrode
Except device surface.
The working principle of this device are as follows: in such a way that back is incident, ultraviolet signal enters more device from one side of substrate
It is absorbed in hetero-junctions multiplication region and generates photo-generate electron-hole pair.In Multiple heterostructures multiplication region, AlGaN epitaxial layer Al component
Variation can modulate band structure, the ionization by collision, same for promoting hole can be played in the band offsets that interface generates
When inhibit electronics ionization by collision effect, i.e. light induced electron is under DC Electric Field, via relatively narrow forbidden bandwidth
AlaGa1-aN layers, compared with broad stopband width AlbGa1-bN、AlcGa1-cN layers, collecting zone is floated to, conduction band band rank need to be overcome by transporting,
Impact ionization process is hindered；On the other hand, photohole is then under DC Electric Field, by compared with broad stopband width
AlcGa1-cAl of the N to relatively narrow forbidden bandwidthaGa1-aN layers of drift, energy increase, and ionization by collision is strengthened, to form hole
The avalanche mode of leading ionization by collision.In addition, by avalanche multiplication process, (i.e. snowslide light is significantly increased in the quantity of photohole
Electric gain), continue the base area that drifts about, is diffused under electric field action, and since the barrier effect of potential barrier of heterogenous junction accumulates in transmitting
At junction interface, the potential barrier of interface is dragged down, so that a large amount of electronics of emitter region cross transmitting junction barrier, into base area and to current collection
Area's drift, further enhances photocurrent gain.
Compared with prior art, beneficial effect is: (1) devising a kind of AlGaN day blind ultraviolet snow of hole triggering avalanche
The advantages of collapsing heterojunction phototransistor detector, combining APD and HPT, especially by avalanche optoelectronic gain and induction photoelectricity
Gain combines, and the high gain of light is achieved that under relatively low bias, has avoided leakage brought by the high working voltage of APD
The problem of electric current is big, poor reliability, while also improving the response speed of device；(2) Multiple heterostructures dynode layer is used, and it is single
Al component dynode layer is compared, and Multiple heterostructures dynode layer is using the discontinuity of band structure while enhancing hole collision ionization
The impact ionization for weakening electronics avoids APD device simultaneously so that hole and electronics are leading impact ionization and are made an uproar in the presence of multiplication
The problem of sound pitch；(3) low temperature AI GaN insert layer structure is introduced, the expansion of p-type base doping impurity Mg atom can be effectively inhibited
It dissipates, improves the crystal quality of device.
Detailed description of the invention
Fig. 1 is overall structure of the present invention.
Specific embodiment
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent；In order to better illustrate this embodiment, attached
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art,
The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of positional relationship is described in attached drawing
Illustrate, should not be understood as the limitation to this patent.
As shown in Figure 1, this method is suitable for making a kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detection
Device, device are combined APD with HPT, using back incidence using the avalanche multiplication of the photo-generated carrier of APD, with HPT's
High optical gain can be realized in induction type optical gain under lower operating voltage, while having evaded AlGaN photodetector
The difficulties that leakage current (dark current) of the part under big operating voltage increases, reliability reduces；Multiple heterostructures multiplication region utilizes
The discontinuity of band structure is also achieved while realizing enhances hole collision ionization and is cut to electron collision ionization
It is weak.The impact ionization of multiplication region can substantially be considered to take hole as leading avalanche multiplication, and this with single carrier is leading
Avalanche multiplication mechanism the excess multiplication noise of device can be effectively reduced.On the other hand, unintentional doping low temperature AI GaN insertion
The introducing of layer can effectively inhibit the diffusion of base area Mg foreign atom, improve the crystal quality of device.
The present embodiment such as Fig. 1 gives a kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector.Device
Include: AlN substrate (1), deposits epitaxy using epitaxial growth method, such as molecular beam epitaxy or Metallo-Organic Chemical Vapor, successively
The unintentional doping low temperature AI N buffer layer (2) of 20 nm grown on AlN substrate (1)；1 μm of unintentional doped high temperature AlN
Buffer layer (3)；The unintentional doping Al of 400 nmmGa1-mN layers (4), Al component m=0.6；The n-type doping Al of 200 nmmGa1-mN
Layer (5), Al component m=0.6, electron concentration are 3.5 × 1018 cm-3；The n-type doping Al of 10 nmnGa1-nN layers (6), Al component n
Along thickness from 0.6 linear change to 0.47, electron concentration is 3.8 × 1017 cm-3；The unintentional doping Al of 50 nmaGa1-aN
Layer (7), Al component a=0.55；The unintentional doping Al of 30 nmbGa1-bN layers (8), Al component b=0.47；80 nm's is unintentional
Adulterate AlcGa1-cN layers (9), Al component c=0.40；The p-type Al of 120 nmxGa1-xN layers (10), Al component x=0.4, hole concentration
It is 3.8 × 1017 cm-3；The unintentional doping Al of 10 nmxGa1-xN layers (11), Al component x=0.4；The N-shaped Al of 10 nmyGa1-yN
Component graded layer (12), for Al component y along thickness from 0.4 linear change to 0.5, electron concentration is 2.7 × 1018 cm-3；150
The n-type doping Al of nmzGa1-zN layers (13), Al component z=0.5, electron concentration is 2.7 × 1018 cm-3；Utilize electron beam evaporation skill
Art is in N-shaped AlzGa1-zN layers (13) and N-shaped AlmGa1-mAlloy treatment obtains after depositing Ti/Al/Ni/Au metal layer on N layers (5)
N-shaped Ohm contact electrode (14).
It is as follows to sketch device preparation technology process:
Step 1: in N-shaped AlzGa1-zOne layer photoresist of spin coating on N layers (13), using the reticle for being furnished with component graphics, light
The partially n-type Al for needing to etch is exposed after carving developmentzGa1-zN layers (13), remaining undeveloped photoresist layer, which is used as, once to be covered
Film；
Step 2: using dry etching technology, etch the AlGaN epitaxial layer exposed, etching depth to N-shaped AlmGa1-mN
Layer (5) forms step structure；
Step 3: to the AlGaN solar blind ultraviolet detector epitaxial wafer after dry etching in pure N2Atmosphere protects lower high temperature
(800-900 DEG C) rapid thermal annealing 1 minute uses wet-treating (such as KOH solution) thereafter, restores the surface that dry etching is formed
Damage；
Step 4: using electron beam evaporation technique respectively in N-shaped AlzGa1-zN layers (13) and N-shaped AlmGa1-mThe platform of N layers (5)
Face edge vapor deposition Ti/Al/Ni/Au metal layer combination circularizes metal contact；
Step 5: Alloying Treatment (high temperature alloy processing) being carried out to endless metal combination layer, forms N-shaped Ohmic contact electricity
Pole (14)；
Step 6: chip being cleaned using organic solution, deionized water, then uses plasma reinforced chemical vapour deposition method
And photoetching process, SiOx passivation film is coated in the wafer surface in addition to metal electrode.
Wherein, ultraviolet signal enters in Multiple heterostructures multiplication region from one side of substrate is absorbed generation light induced electron-sky
Cave pair.In Multiple heterostructures multiplication region, the variation of AlGaN epitaxial layer Al component can modulate band structure, generate in interface
Band offsets can play the role of the ionization by collision for promoting hole while the ionization by collision for inhibiting electronics, i.e. photoproduction
Electronics is under DC Electric Field, via the Al of relatively narrow forbidden bandwidthaGa1-aN layers, compared with broad stopband width AlbGa1-bN、AlcGa1- cN layers, collecting zone is floated to, conduction band band rank need to be overcome by transporting, and impact ionization process is hindered；On the other hand, photohole
Then under DC Electric Field, by the Al compared with broad stopband widthcGa1-cAl of the N to relatively narrow forbidden bandwidthaGa1-aN layers of drift, energy
Increase, ionization by collision is strengthened, to form the avalanche mode that ionization by collision is dominated in hole.In addition, passing through avalanche multiplication mistake
(i.e. avalanche optoelectronic gain) is significantly increased in journey, the quantity of photohole, continues the base area that drifts about, is diffused under electric field action, and
Since the barrier effect of potential barrier of heterogenous junction accumulates in emitter junction interface, the potential barrier of interface is dragged down, so that emitter region is a large amount of
Electronics crosses transmitting junction barrier, drifts about into base area and to collecting zone, further enhances photocurrent gain.With common photoelectric crystal
The advantages of pipe is compared, and avalache phototransistor combines APD and HPT, especially by avalanche optoelectronic gain and induction optical gain
It combines, the high gain of light is achieved that under relatively low bias, avoided leakage current brought by the high working voltage of APD
Greatly, the problem of poor reliability, while the response speed of device is also improved.The present invention uses Multiple heterostructures dynode layer, and single
Al component dynode layer is compared, and Multiple heterostructures dynode layer is using the discontinuity of band structure while enhancing hole collision ionization
The impact ionization for weakening electronics avoids APD device simultaneously so that hole and electronics are leading impact ionization and are made an uproar in the presence of multiplication
The problem of sound pitch.Low temperature AI GaN insert layer structure is introduced, can effectively inhibit the diffusion of p-type base doping impurity Mg atom, mention
The crystal quality of high device.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (10)
1. a kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector, which is characterized in that including substrate (1), benefit
With epitaxial growth method, the unintentional doping low temperature AI N buffer layer (2) successively grown on substrate (1), unintentional doped high temperature
AlN buffer layer (3), unintentional doping AlmGa1-mN Window layer (4), N-shaped AlmGa1-mN layers (5), N-shaped AlnGa1-nN component is gradual
Layer (6), unintentional doping AlaGa1-aN absorbs dynode layer (7), unintentional doping AlbGa1-bN absorbs dynode layer (8), unintentional to mix
Miscellaneous AlcGa1-cN absorbs dynode layer (9), Mg doped p type AlxGa1-xN layers (10), unintentional doping AlxGa1-xN layers (11), N-shaped
AlyGa1-yN component graded layer (12) and N-shaped AlzGa1-zN layers (13), and the last N-shaped Europe deposited using device technology
Nurse contacts electrode (14)；The p-type AlxGa1-xIt is used as base area, the N-shaped Al for N layers (10)mGa1-mIt is used as collecting zone for N layers (5)
With Ohmic electrode contact layer, the N-shaped AlzGa1-zIt is used as emitter region and Ohmic electrode contact layer for N layers (13)；Al group in each layer
Divide m=0.6 ~ 0.8, a=0.55 ~ 0.75, b=0.47 ~ 0.67, c=0.38 ~ 0.47, x=0.38 ~ 0.47, z=0.5 ~ 0.6；Al component
A, the size relation of b and c should meet a > b > c.
2. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 1
Method, which comprises the following steps:
Step 1: in N-shaped AlzGa1-zOne layer photoresist of spin coating on N layers (13), using the reticle for being furnished with component graphics, photoetching is aobvious
Movie queen exposes the partially n-type Al for needing to etchzGa1-zN layers (13), remaining undeveloped photoresist layer is as an exposure mask；
Step 2: using dry etching technology, etch the AlGaN epitaxial layer exposed, etching depth to N-shaped AlmGa1-mN layers (5),
Form step structure；
Step 3: the quick thermal annealing process and wet-treating under the protection of pure nitrogen gas atmosphere being carried out to the chip after dry etching, gone
The surface damage formed except dry etching；
Step 4: using vacuum evaporation technology respectively in N-shaped AlzGa1-zN layers (13) and N-shaped AlmGa1-mThe mesa edge of N layers (5)
Place's vapor deposition is contacted by the endless metal of metal layer combination；
Step 5: Alloying Treatment being carried out to endless metal combination layer, is formed N-shaped Ohm contact electrode (14)；
Step 6: cleaning device surface using organic solution, deionized water, use plasma reinforced chemical vapour deposition method thereafter
Or low-pressure chemical vapour deposition technique is coated with silica or nitride passivation film in device surface, protects in addition to metal electrode
Device surface.
3. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: substrate (1) material is that sapphire, AlN or other wide-band gap material substrates, forbidden band are wide
Degree needs that solar blind UV incidence can be allowed to pass through.
4. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the unintentional doping low temperature AI N buffer layer (2) with a thickness of 10-100 nm；It is described unintentional
Doped high temperature AlN buffer layer (3) with a thickness of 0.2-2.0 μm；AlN buffer layer is used to alleviate lattice and coefficient of thermal expansion mismatch,
Defect, stress and the dislocation density of Material growth are reduced, to guarantee that AlGaN epitaxial layer thereon has good crystal matter
Amount.
5. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the unintentional doping AlmGa1-mN Window layer (4) with a thickness of 0.1-1.0 μm, for being sustained
Lattice mismatch between AlN and upper layer AlGaN, while the window as substrate optical signals incidence；The N-shaped AlmGa1-mN layers
(5) Al component m=0.6 ~ 0.8, with a thickness of 0.1-0.6 μm, electron concentration is 1-5 × 1018 cm-3。
6. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the N-shaped AlnGa1-nThe Al component n of N component graded layer (6) is on the Al component m of lower layer and upper layer
Al component a between linear change, with a thickness of 10-30 nm, electron concentration is 1-5 × 1018 cm-3, for improving band offsets
To the blocking that light induced electron, hole transport, to be conducive to the collection of photo-generated carrier.
7. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the unintentional doping AlaGa1-aN absorb dynode layer (7) with a thickness of 30-150 nm；It is described non-
Deliberately doping AlbGa1-bN absorb dynode layer (8) with a thickness of 30-150 nm；The unintentional doping AlcGa1-cN absorbs multiplication
Layer (9) with a thickness of 30-150 nm；AlaGa1-aN layers, AlbGa1-bN layers and AlcGa1-cN layers of combination form Multiple heterostructures multiplication
Area inhibits the ionization by collision of electronics using Multiple heterostructures band structure discontinuity while promoting the ionization by collision in hole,
It can effectively reduce multiplication noise.
8. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the p-type AlxGa1-xN layers (10) with a thickness of 100-200 nm, hole concentration is 3 × 1017-5
×1018 cm-3。
9. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the unintentional doping AlxGa1-xN layers (11) with a thickness of 10-50 nm, growth temperature is compared with p
The growth temperature of type epitaxial layer is 100 DEG C ~ 300 DEG C low, for alleviating the diffusion of base area Mg foreign atom.
10. a kind of preparation of blind ultraviolet snowslide heterojunction phototransistor detector of AlGaN base day according to claim 2
Method, it is characterised in that: the N-shaped AlzGa1-zN layers (13) with a thickness of 100-200 nm, electron concentration is in 1-5 × 1018
cm-3Between；The N-shaped AlyGa1-yThe Al component y of N component graded layer (12) linear change between x and z, with a thickness of 10-30
Nm, electron concentration are 1-5 × 1018 cm-3；
N-shaped Ohm contact electrode (14) be by electron beam evaporation, sputtering vacuum evaporation technology, by Ti/Al/Ni or Pd, Pt,
Mo/Au, Cr/Pd/Au metal layer combination are deposited on N-shaped AlzGa1-zN(13) layer and N-shaped AlmGa1-mN(5) layer surface, and pass through conjunction
Gold processing obtains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711063163.4A CN107863413B (en) | 2017-11-02 | 2017-11-02 | A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711063163.4A CN107863413B (en) | 2017-11-02 | 2017-11-02 | A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107863413A CN107863413A (en) | 2018-03-30 |
| CN107863413B true CN107863413B (en) | 2019-08-27 |
Family
ID=61700432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711063163.4A Expired - Fee Related CN107863413B (en) | 2017-11-02 | 2017-11-02 | A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107863413B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119508B (en) * | 2018-08-08 | 2023-10-20 | 镇江镓芯光电科技有限公司 | Back incidence solar blind ultraviolet detector and preparation method thereof |
| CN109166935B (en) * | 2018-08-09 | 2023-11-03 | 镇江镓芯光电科技有限公司 | Al component transition type solar blind ultraviolet detector and preparation method thereof |
| CN109103267A (en) * | 2018-08-09 | 2018-12-28 | 镇江镓芯光电科技有限公司 | A kind of AlGaN base MSM structure solar-blind UV detector and preparation method thereof |
| CN109285914B (en) * | 2018-10-15 | 2020-10-16 | 中山大学 | AlGaN-based ultraviolet heterojunction phototransistor detector and preparation method thereof |
| CN109346551A (en) * | 2018-11-12 | 2019-02-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of AlGaN base ultraviolet detector extremely production method |
| CN109494275B (en) * | 2018-11-22 | 2021-01-05 | 中国科学院长春光学精密机械与物理研究所 | AlGaN-based solar blind ultraviolet phototransistor detector and manufacturing method thereof |
| CN109585592B (en) * | 2018-11-29 | 2020-09-04 | 西安电子科技大学 | Ultraviolet detector of p-BN/i-AlGaN/n-AlGaN and manufacturing method |
| CN110047955B (en) * | 2019-03-08 | 2020-12-22 | 中山大学 | AlGaN ultraviolet avalanche photodiode detector and preparation method thereof |
| CN111446332A (en) * | 2020-04-17 | 2020-07-24 | 中国科学院长春光学精密机械与物理研究所 | AlGaN single-pole carrier solar blind ultraviolet detector and preparation method thereof |
| US11495707B2 (en) | 2020-04-17 | 2022-11-08 | Changchun Institute Of Optics, Fine Mechanics And Physics, Chinese Academy Of Sciences | AlGaN unipolar carrier solar-blind ultraviolet detector and manufacturing method thereof |
| CN112563381B (en) * | 2020-12-29 | 2022-04-05 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN112993077B (en) * | 2021-03-30 | 2022-09-20 | 中山大学 | GaN-based ultraviolet photoelectric detector and preparation method thereof |
| CN113644165B (en) * | 2021-08-11 | 2023-12-08 | 全磊光电股份有限公司 | Low dark current high sensitivity photoelectric detector structure and manufacturing method thereof |
| CN114883434B (en) * | 2022-04-08 | 2024-04-16 | 华南理工大学 | Self-powered MSM type ZnO-based ultraviolet photoelectric detector and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100463416B1 (en) * | 2002-09-05 | 2004-12-23 | 한국전자통신연구원 | Avalanche phototransistor |
| JP6639260B2 (en) * | 2016-02-12 | 2020-02-05 | トヨタ自動車株式会社 | Semiconductor device |
| CN105957908A (en) * | 2016-05-20 | 2016-09-21 | 中国科学院半导体研究所 | Multiplication region controlled avalanche photodiode and manufacturing method thereof |
-
2017
- 2017-11-02 CN CN201711063163.4A patent/CN107863413B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN107863413A (en) | 2018-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107863413B (en) | A kind of AlGaN base day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof | |
| Yang et al. | Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise | |
| CN109494275B (en) | AlGaN-based solar blind ultraviolet phototransistor detector and manufacturing method thereof | |
| CN108305911B (en) | It absorbs, III group-III nitride semiconductor avalanche photodetector of dynode layer separated structure | |
| US20080087914A1 (en) | Extreme Ultraviolet (EUV) Detectors Based Upon Aluminum Nitride (ALN) Wide Bandgap Semiconductors | |
| CN111739960B (en) | Gain type heterojunction ultraviolet photoelectric detector | |
| CN110047955B (en) | AlGaN ultraviolet avalanche photodiode detector and preparation method thereof | |
| CN109686809B (en) | Group III nitride semiconductor visible light avalanche photodetector and preparation method thereof | |
| CN107403848B (en) | Backside illuminated cascade multiplication avalanche photodiode | |
| CN109980040A (en) | A kind of gallium oxide MIS structure ultraviolet detector | |
| CN108630779B (en) | Silicon carbide detector and preparation method thereof | |
| CN111403505B (en) | Bipolar visible light detector and preparation method thereof | |
| CN105742399A (en) | III nitride-based double-heterojunction phototransistor | |
| CN109285914B (en) | AlGaN-based ultraviolet heterojunction phototransistor detector and preparation method thereof | |
| CN113471326B (en) | III-group nitride heterojunction photoelectric detector | |
| KR101671552B1 (en) | Sensor, semiconductor substrate, and method for manufacturing semiconductor substrate | |
| CN102931272A (en) | Ultraviolet detector structure with gain and preparation method thereof | |
| JPS60244078A (en) | Back surface illumination photodiode having wide band gap cap layer | |
| Mosca et al. | Multilayer (Al, Ga) N structures for solar-blind detection | |
| CN210349846U (en) | III-group nitride semiconductor avalanche photodetector with absorption and multiplication layer separation structure | |
| CN114678439B (en) | 2DEG ultraviolet detector with symmetrical interdigital structure and preparation method thereof | |
| CN116799092A (en) | Solar blind ultraviolet detector based on gallium oxide base and preparation method thereof | |
| WO2001015241A1 (en) | Ultraviolet-ray detecting device | |
| CN209675319U (en) | A kind of gallium oxide MIS structure ultraviolet detector | |
| Wang et al. | Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190827 Termination date: 20211102 |