CN107845559A - Plasma generator electrode and its manufacture method - Google Patents
Plasma generator electrode and its manufacture method Download PDFInfo
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- CN107845559A CN107845559A CN201711282245.8A CN201711282245A CN107845559A CN 107845559 A CN107845559 A CN 107845559A CN 201711282245 A CN201711282245 A CN 201711282245A CN 107845559 A CN107845559 A CN 107845559A
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- plasma generator
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- column structure
- acicular texture
- generator electrode
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000003054 catalyst Substances 0.000 claims abstract description 58
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910000510 noble metal Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 230000003197 catalytic effect Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000013528 metallic particle Substances 0.000 claims description 6
- 238000006555 catalytic reaction Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 4
- 239000010970 precious metal Substances 0.000 abstract description 4
- 230000001427 coherent effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005243 fluidization Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000505 pernicious effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- OLGONLPBKFPQNS-UHFFFAOYSA-M sodium 2-(4-phenylphenyl)butanoate Chemical compound [Na+].CCC(C([O-])=O)c1ccc(cc1)-c1ccccc1 OLGONLPBKFPQNS-UHFFFAOYSA-M 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Catalysts (AREA)
Abstract
The invention discloses a kind of plasma generator electrode and its manufacture method, the electrode includes substrate, forms column structure array and acicular texture array in substrate, and acicular texture array is formed in the substrate outside column structure array and the bottom of column structure array.The structure takes full advantage of the cooperation of column structure and acicular texture across yardstick, and acicular texture gathers internal field and promotes direct conversion of the gas to plasmoid in point effect geometrically；It and the side wall of column structure contains substantial amounts of surface state, can further promote the propagation in the diffusion of plasma in space and maintenance, can realize and large range of high-density plasma distribution is expeditiously formed under conditions of low voltage driving.The manufacture method of the electrode remains in column structure bottom after dexterously forming column structure using precious metal catalyst etching substrate, continues the catalyst as the growth of follow-up acicular texture, has reached efficient, has saved, coherent across yardstick micro Process effect.
Description
Technical field
The present invention relates to plasma technology field, more particularly to a kind of plasma generator electrode and its manufacture method.
Background technology
Plasma is a kind of existing forms of material, containing the largely particle with positive and negative charge and has higher thing
Reason, chemism, therefore it is widely used in the fields such as film generation, structure etching, surface treatment, pernicious gas decomposition.Respectively
Kind plasma application is all the transfer of energy in essence, in order to improve the application efficiency of plasma, it is necessary to same
Drive condition under improve plasma generator caused by electrons/ions density.Traditional plasma occurring mode includes
High-energy rays such as X ray, heating excite, laser etc., and the guarantee of its security has more highly difficult.Comparatively safety and stability
Mode is that the gas discharge under high-strength electric field produces plasma, and secure context difficulty is concentrated mainly on high voltage drive, mechanism
Aspect subject matter is under normal barometric pressure that the controllability of gas discharge and efficiency are low, and application aspect subject matter is production of discharging
Raw plasma skewness, fluidization tower consumed energy is easily produced, it is difficult to which the space outside generator maintains enough bands
Charged particle density.
In order to solve the above-mentioned technical problem, targetedly scheme is suggested.For example for high voltage, utilize less electricity
Die opening can obtain higher electric-field intensity under certain voltage conditions or reduce institute under the conditions of certain electric-field intensity
The voltage that need to be loaded, but correspondingly, reduce the collision probability of charged particle in space and discharged on the whole so as to inhibit
The efficiency of plasma is produced, or reduces the distributed area of plasma so as to constrain its application；Reduce electric discharge
Air pressure, not only needs the vacuum system of complexity, while constrains application；Reduce and concentrate electric discharge and fluidization tower to produce and introduce Jie
Matter barrier discharge, normally only forms Current filament between parallel pole, is unable to reach the charged particle distribution of larger space scope,
The correlation technique problem for focusing on required pulse excitation or high-frequency and high-voltage power supply of direction research at present.
The content of the invention
The present invention proposes a kind of plasma generator electrode and its manufacture method, with the condition driven in low voltage
Under expeditiously form the distribution of large range of high-density plasma.
In order to solve the above problems, the present invention provides a kind of plasma generator electrode, including：
Substrate；
Column structure array, formed on the substrate, the column structure array includes some column structures；
Acicular texture array, is formed in the substrate outside some column structures and some column structures
Bottom, the acicular texture array includes some acicular textures.
Wherein, the height of the acicular texture is far below the height of the column structure.
In one embodiment of the invention, it is also formed with needle-like in the top of some column structures and/or side wall
Structure.
In one embodiment of the invention, the top of the acicular texture forms heterojunction structure with metallic particles.
In one embodiment of the invention, the draw ratio of single column structure is not less than 2, highly not less than 100 microns.
In one embodiment of the invention, the spacing in the column structure array between adjacent columnar structures is not less than
The diameter of the column structure.
In one embodiment of the invention, the draw ratio of single acicular texture is not less than 10, and diameter is not more than 10 microns.
In one embodiment of the invention, the column structure array is formed by the substrate by etching.
In one embodiment of the invention, the etching uses patterned catalyst film as catalyst.
In one embodiment of the invention, the patterned catalyst film includes lower film, and the lower floor is thin
Film and substrate contact, the material of the lower film is noble metal, for being catalyzed the etching of the substrate.
In one embodiment of the invention, the patterned catalyst film also includes topmost thin film, the upper strata
Film is located on the lower film, the material of the topmost thin film for iron, gold, silver, titanium, palladium, nickel, gallium, zinc and its alloy and/
Or any of oxide or its combination, for being catalyzed the growth of the acicular texture.
In one embodiment of the invention, the substrate is silicon chip.
Simultaneously present invention also offers a kind of manufacture method of plasma generator electrode, comprise the following steps：
S1:One substrate is provided；
S2:Column structure array is formed on the substrate, and the column structure array includes some column structures；
S3:In the substrate outside some column structures and some column structures bottom formed needle-like
Array of structures, the acicular texture array include some acicular textures.
In one embodiment of the invention, in step s3, the acicular texture is also formed in the column structure
On top and/or side wall.
In one embodiment of the invention, in addition to step S4：The acicular texture top formed metallic particles-
The heterojunction structure of acicular texture.
In one embodiment of the invention, step S12 is also included between the step S1 and step S2：In the substrate
Upper depositing catalytic agent film and the graphical catalyst film.
In one embodiment of the invention, the step S2 is specially：By patterned catalyst film in etching liquid
Middle catalysis etches the substrate and forms the column structure array.
In one embodiment of the invention, the step S3 is specially：Using the patterned catalyst film as
Catalyst, the growth of the acicular texture is catalyzed, forms acicular texture array.
In one embodiment of the invention, the patterned catalyst film includes lower film, and the lower floor is thin
Film and substrate contact, the material of the lower film is noble metal, for being catalyzed the etching of the substrate.
In one embodiment of the invention, the patterned catalyst film also includes topmost thin film, the upper strata
Film is located on the lower film, the material of the topmost thin film for iron, gold, silver, titanium, palladium, nickel, gallium, zinc and its alloy and/
Or any of oxide or its combination, for being catalyzed the growth of the acicular texture.
The present invention is allowed to compared with prior art, the advantages of following and actively effect be present due to using above technical scheme
Fruit：
1) plasma generator electrode provided by the invention, column structure and acicular texture are taken full advantage of across yardstick
Coordinate, wherein acicular texture in point effect (i.e. the structure top end of high length-diameter ratio can produce local enhancement electric field) geometrically,
Gather internal field and promote direct conversion of the gas to plasmoid；And the side wall of column structure contains substantial amounts of surface
It state, can further promote the propagation in the diffusion of plasma in space and maintenance, be driven so as to realize in low voltage
Large range of high-density plasma distribution is expeditiously formed under conditions of dynamic.
2) in addition to acicular texture is distributed with except bottom in the column structure of plasma generator electrode provided by the invention,
Also acicular texture, possessed point effect and the same energy of surface state effect can be formed on the top of column structure and/or side wall
Compared with forming the distribution of large range of high-density plasma under low driving voltage.
3) plasma generator electrode provided by the invention, the top of its acicular texture and metallic particles are formed with metal
The heterojunction structure of particle-acicular texture, the heterojunction structure can provide more surface state so that gas molecule is being ionized shape
During plasma, electronics has bigger probability to depart from neutral gas molecule so as to further promote the generation of plasma
Efficiency.
4) manufacture method of plasma generator electrode provided by the invention, formed using precious metal catalyst etching substrate
Column structure bottom is remained in after column structure, continues the catalyst as the growth of follow-up acicular texture, has reached efficient, section
Save, coherent across yardstick micro Process effect.
Brief description of the drawings
Fig. 1 is the schematic front view of plasma generator electrode provided in an embodiment of the present invention；
Fig. 2 is the schematic flow sheet of the manufacture method for the plasma generator electrode that one embodiment of the invention provides；
Fig. 3 A- Fig. 3 C are each steps pair of the manufacture method for the plasma generator electrode that one embodiment of the invention provides
The device architecture schematic diagram answered.
In figure：1- substrates, 2- column structures, 3- acicular textures, 4- catalyst films.
Embodiment
Below in conjunction with the drawings and specific embodiments to plasma generator electrode proposed by the present invention and its manufacture method
It is described in further detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted
It is that accompanying drawing uses using very simplified form and non-accurately ratio, only to convenience, lucidly aids in illustrating this hair
The purpose of bright embodiment.
Before this present invention is proposed, present inventor is carried out to current possible plasma generator electrode
Sufficiently research, specific research are as follows：
1) electrode structure for the plasma generator reported, in order to strengthen internal field, it is introduced directly into micron even
The acicular texture of nanoscale, although can have one by the formation efficiency of plasma while driving voltage threshold value needed for reduction
Fixed lifting, but sphere of action is extremely limited, relies only on the point effect at the top of acicular texture；Meanwhile applicant's progress
Test result indicates that uneven electric discharge such as occurs, such as produce high-energy, the fluidization tower of high electron flux, tiny needle-like knot
Structure will be destroyed and failed.
2) electrode structure for the plasma generator reported, the acicular texture of micro-nano-scale is such as introduced directly into,
The surface state that acicular texture is provided is also used on microcosmic, required energy of a charge turns when having been demonstrated to promote more to ionize
Move, but due to remaining restricted to acicular texture surface only with acicular texture, its effective range, in plasma diffusion, drift
Space fail effectively to be maintained and promote.
3) applicant produces plasma by the research in terms of plasma mechanism of production and substantial amounts of gas discharge
Experiment, find diameter be combined in several microns to nanoscale of acicular texture with micro-meter scale column structure, can be effectively
Improve plasma generator electrode fine structure sphere of action is limited in producing plasma process the defects of so that wait from
The sophisticated local diffusion space that extends to column structure formed of the enhancing effect of daughter generation from acicular texture.
Based on the studies above, present inventor creatively devises a kind of plasma generator electrode, please join
Fig. 1 is examined, as shown in figure 1, plasma generator electrode provided in an embodiment of the present invention includes substrate 1, formed on the base 1
Column structure array and acicular texture array；Wherein, column structure array includes some column structures 2；Acicular texture array
Specifically formed in the substrate outside some column structures and the bottom of some column structures, acicular texture array include some pins
Shape structure 3.Plasma generator electrode provided by the invention, take full advantage of column structure and acicular texture matching somebody with somebody across yardstick
Close, wherein acicular texture is in point effect (i.e. the structure top end of high length-diameter ratio can produce local enhancement electric field) geometrically, collection
Poly- internal field promotes direct conversion of the gas to plasmoid；And the side wall of column structure contains substantial amounts of surface state,
The propagation in the diffusion of plasma in space and maintenance can further be promoted, so as to realize in low voltage driving
Under the conditions of expeditiously form the distribution of large range of high-density plasma.
Wherein, the height of the acicular texture 3 is far below the height of the column structure 2, that is, on the whole,
Acicular texture 3 is located at bottom.
As a preferred embodiment, acicular texture is also formed with the top of some column structures 2 and/or side wall, so as to
The contact area and chance bigger with plasma are provided, structure plasma maintenance on the move and propagation have actively
Facilitation.
As further preferred embodiment, top and the metallic particles of acicular texture 3 form heterojunction structure, so as to
The surface state effect that superposition is provided by metallic particles in point effect, further promote plasma generation.
Wherein, the silicon chip of substrate 1, in order to ensure effective transmission of drive signal, the preferably relatively low height of resistivity leads silicon
Piece, wherein, height leads silicon chip and refers to silicon chip of the resistivity below tens ohm of centimetres of ranks.Certainly, the present invention is not with this
It is limited, it is also an option that other materials are as substrate.Column structure array is formed by substrate by etching, single column structure
2 draw ratio (breadth depth ratio) is not less than 2, highly not less than 100 microns.Preferably, adjacent columnar structures 2 in column structure array
Between spacing be not less than the column structure 2 diameter, with ensure plasma propagation and motion process in have it is enough
The geometric effect surface state enough with offer.Wherein, etching uses patterned catalyst film as catalyst.Specifically,
Patterned catalyst film includes lower film, and the lower film contacts with substrate 1, and the material of the lower film is expensive
Metal, for being catalyzed the etching of the substrate, to form column structure.It is thin that the patterned catalyst film also includes upper strata
Film, the topmost thin film are located on the lower film, and the material of the topmost thin film is iron, gold, silver, titanium, palladium, nickel, gallium, zinc
And its any of alloy and/or oxide or its combination, for being catalyzed the growth of the acicular texture.
In one embodiment of the invention, the draw ratio of single acicular texture 3 is not less than 10, and diameter is micro- no more than 10
Rice, to ensure point effect of the acicular texture 3 in plasma generation process.
The embodiment of the present invention additionally provides a kind of manufacture method of plasma generator electrode, including following step simultaneously
Suddenly：
S1:One substrate is provided；
S2:Column structure array is formed on the substrate, and the column structure array includes some column structures；
S3:In the substrate outside some column structures and some column structures bottom formed needle-like
Array of structures, the acicular texture array include some acicular textures.
In one embodiment of the invention, in step s3, the acicular texture is also formed in the column structure
On top and/or side wall.
In one embodiment of the invention, in addition to step S4：The acicular texture top formed metallic particles-
The heterojunction structure of acicular texture.
In one embodiment of the invention, step S12 is also included between the step S1 and step S2：In the substrate
Upper depositing catalytic agent film and the graphical catalyst film.
In one embodiment of the invention, the step S2 is specially：By patterned catalyst film in etching liquid
Middle catalysis etches the substrate and forms the column structure array.
In one embodiment of the invention, the step S3 is specially：Using the patterned catalyst film as
Catalyst, the growth of the acicular texture is catalyzed, forms acicular texture array.
In one embodiment of the invention, the patterned catalyst film includes lower film, and the lower floor is thin
Film and substrate contact, the material of the lower film is noble metal, for being catalyzed the etching of the substrate.
In one embodiment of the invention, the patterned catalyst film also includes topmost thin film, the upper strata
Film is located on the lower film, the material of the topmost thin film for iron, gold, silver, titanium, palladium, nickel, gallium, zinc and its alloy and/
Or any of oxide or its combination, for being catalyzed the growth of the acicular texture.
Specific embodiment given below illustrates to the manufacture method of the plasma generator electrode of the present invention.
Embodiment 1
Fig. 2 and Fig. 3 A- Fig. 3 C are refer to, with reference to Fig. 2 and Fig. 3 A- Fig. 3 C, the plasma that the present embodiment provides occurs
The manufacture method of device electrode comprises the following steps：
S101:One substrate 1 is provided
The substrate 1 is specially silicon chip, and the preferably relatively low height of resistivity leads silicon chip, to ensure effective biography of drive signal
It is defeated.
S102:Depositing catalytic agent film 4 and the graphical catalyst film on the base 1, the device after the completion of the step
Structure is as shown in Figure 3A.
Wherein, catalyst film 4 includes lower film and topmost thin film, and lower film contacts with substrate 1, and its material is expensive
Metal, for being catalyzed the etching of the substrate 1；The material of topmost thin film more than noble metal be iron, gold, silver, titanium, palladium, nickel,
Gallium, zinc and its any of alloy and/or oxide or its combination, for being catalyzed the growth of the acicular texture 3.
The method that catalyst film 4 is deposited on the surface of substrate 1 includes sputtering and colloidal sol coating, wherein sputtering is certain
Particle (ion or neutral atom, molecule) the bombardment surface of solids of energy, the atom or molecule for making solid near surface obtain enough
Big energy and finally escape the surface of solids and be moved to the work that Target Board (substrate 1 i.e. in the application) surface forms film
Skill；Colloidal sol coating refer to first by required catalyst material the particle of nanoscale be dispersed in liquid dispersant be made liquid it is molten
Glue, the technique that the lyosol is then attached to Target Board (substrate 1 i.e. in the application) surface formation film.
Wherein the graphical of catalyst film has two ways：1) it is thin in the surface deposited catalyst of the substrate 1 first
Film, photoresist spin coating, photoetching, the development of the semiconducter process of standard are then utilized on catalyst film, with reservation
Photoresist protects partially catalyzed agent film and exposes the figure that needs to remove catalyst film part, utilizes Ions Bombardment
(dry method), chemical attack (wet method) remove the catalyst film material for the part that is exposed, that is, form the upper table of the column structure 2
Face (top surface)；2) the photoresist spin coating of semiconducter process of standard, photoetching, aobvious is utilized on the surface of the substrate 1 first
Shadow, the upper surface figure of the column structure 2 is formd with the photoresist of reservation, and exposes the figure for needing etched portions,
Then catalyst film is deposited on patterned photoresist surface with aforementioned film depositing operation, wherein needing etched portions
Graph position catalyst film directly contacts with the substrate 1, and the upper surface location of column structure 2 is because there is photoresist to protect institute
Photoresist surface will be deposited on catalyst film, using acetone while the part photoresist is dissolved by catalyst thereon
Material removes from the solution-off of substrate 1, that is, forms patterned catalyst film 4 as shown in Figure 2.
S103:The substrate 1 that surface deposition has graphical catalyst film 4 is put into etching liquid and carries out wet etching, shape
Into column structure array；Device architecture after the completion of the step is as shown in Figure 3 B.
Wherein, in the case where the substrate 1 is silicon chip, etching liquid is that (molarity is for the hydrofluoric acid of standard
1.87mol/L) with hydrogen peroxide (molarity 8.94mol/L) mixed solution, reaction temperature is room temperature (18 DEG C), is such as needed
Accelerate course of reaction, hydrofluoric acid concentration can be raised and simultaneously improve reaction solution temperature to 50 DEG C for 2 times.Reaction time according to
Etching depth (i.e. the height of column structure 2) requirement, the complexity of figure, column structure 2 and the proportionate relationship of intercolumniation spacing
And set, it can be adjusted in specific implementation process according to measurement result.
To make described column structure array reach more preferable regularity, it is preferable that in described catalyst film 4,
With adding magnetic material above the layer of precious metal that the substrate 1 directly contacts, such as iron, cobalt, nickel, magnetic is then added outside etching liquid
, the contact interface of noble metal and the material of substrate 1 is further promoted the column structure 2 by the pressure of certain orientation
Array in order between individual.
S104:Using the graphical catalyst film for remaining in substrate and column structure bottom as catalyst, needle-like is grown
Structure, form acicular texture array；Device architecture after the completion of the step is as shown in Figure 3 C.
After etching terminates, the patterned catalyst film 4 will be retained in the substrate 1 and the column structure 2
Bottom because during etching, metal material is not substantially consumed by, thus can with the etching process of silicon chip and with
Sink with silicon chip, still can finally retain on the surface of substrate 1 after etching and on the bottom of column structure 2.Graphically
Catalyst film 4 in the component that grows of the contained promotion acicular texture 3 catalytic action will be played under the conditions of corresponding.
As typical etch catalyst material --- the gold grain of the silicon chip of the substrate 1, applicant demonstrates it as the needle-like
The catalysis characteristics that structure 3 grows：Hydrogen is as environmental gas, and the ratio in arsenic source and gallium source is 14.2, air pressure 10mBar, reaction
Temperature control can grow the array of the acicular texture 3 of GaAs nano whisker, its length is 100 under conditions of 430 DEG C
For nanometer between 500 nanometers, diameter is less than 10 nanometers.As a result it is also shown that partially catalyzed agent material gold grain is as described in being retained in
The sidewall surfaces of column structure 2 or upper surface, it can similarly be catalyzed GaAs nano whisker as the acicular texture 3
Growth course.
S105:The metallic particles for remaining in the top of acicular texture 3 is combined with acicular texture 3, forms metallic particles-needle-like knot
The heterojunction structure of structure.
Catalyst material is if be constantly in the noble metal on the top of acicular texture 3, then in the growth technique of acicular texture
After the completion of stable noble metal granule will finally be stored in the top of acicular texture 3, the metallic particles-acicular texture formed
The heterojunction structure combined, the surface state effect provided by catalytic metal can be superimposed in point effect, further promote etc.
Gas ions generate.
Certainly, above-described embodiment is only a preferred embodiment of the present invention, and step S105 is the preferred step as the present invention
Suddenly, it is optional, the step can also be omitted in other embodiments.
The manufacture method of plasma generator electrode provided by the invention, dexterously etch substrate using precious metal catalyst
Remaining in column structure bottom after formation column structure, (bottom refers to the substrate and column structure sheet of column structure bottom herein
The polycrystalline substance of body), continue the catalyst as the growth of follow-up acicular texture, reached efficiently, save, be coherent micro- across yardstick
Processing effect.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (20)
- A kind of 1. plasma generator electrode, it is characterised in that including：Substrate；Column structure array, formed on the substrate, the column structure array includes some column structures；Acicular texture array, is formed in the substrate outside some column structures and the bottom of some column structures Portion, the acicular texture array include some acicular textures.
- 2. plasma generator electrode as claimed in claim 1, it is characterised in that the height of the acicular texture is far below The height of the column structure.
- 3. plasma generator electrode as claimed in claim 1, it is characterised in that the top of some column structures And/or acicular texture is also formed with side wall.
- 4. the plasma generator electrode as described in any one of claims 1 to 3, it is characterised in that the acicular texture Top forms heterojunction structure with metallic particles.
- 5. the plasma generator electrode as described in any one of claims 1 to 3, it is characterised in that single column structure Draw ratio is not less than 2, highly not less than 100 microns.
- 6. plasma generator electrode as claimed in claim 5, it is characterised in that adjacent pillars in the column structure array Spacing between shape structure is not less than the diameter of the column structure.
- 7. plasma generator electrode as claimed in claim 5, it is characterised in that the draw ratio of single acicular texture is not small In 10, diameter is not more than 10 microns.
- 8. plasma generator electrode as claimed in claim 1, it is characterised in that the column structure array is by the base Bottom is formed by etching.
- 9. plasma generator electrode as claimed in claim 8, it is characterised in that the etching uses patterned catalysis Agent film is as catalyst.
- 10. plasma generator electrode as claimed in claim 9, it is characterised in that the patterned catalyst film Including lower film, the lower film and substrate contact, the material of the lower film is noble metal, for being catalyzed the base The etching at bottom.
- 11. plasma generator electrode as claimed in claim 10, it is characterised in that the patterned catalyst film Also include topmost thin film, the topmost thin film is located on the lower film, the material of the topmost thin film is iron, gold, silver, Titanium, palladium, nickel, gallium, zinc and its any of alloy and/or oxide or its combination, for being catalyzed the life of the acicular texture It is long.
- 12. plasma generator electrode as claimed in claim 1, it is characterised in that the substrate is silicon chip.
- 13. a kind of manufacture method of plasma generator electrode, it is characterised in that comprise the following steps：S1:One substrate is provided；S2:Column structure array is formed on the substrate, and the column structure array includes some column structures；S3:In the substrate outside some column structures and some column structures bottom formed acicular texture Array, the acicular texture array include some acicular textures.
- 14. the manufacture method of plasma generator electrode as claimed in claim 13, it is characterised in that in step s3, The acicular texture is also formed in top and/or the side wall of the column structure.
- 15. the manufacture method of the plasma generator electrode as described in claim 13 or 14, it is characterised in that also include step Rapid S4：The heterojunction structure of metallic particles-acicular texture is formed on the top of the acicular texture.
- 16. the manufacture method of plasma generator electrode as claimed in claim 13, it is characterised in that the step S1 with Also include step S12 between step S2：Depositing catalytic agent film and the graphical catalyst film on the substrate.
- 17. the manufacture method of plasma generator electrode as claimed in claim 16, it is characterised in that the step S2 tools Body is：The etching substrate is catalyzed in etching liquid form the column structure array by patterned catalyst film.
- 18. the manufacture method of plasma generator electrode as claimed in claim 17, it is characterised in that the step S3 tools Body is：Using the patterned catalyst film as catalyst, the growth of the acicular texture is catalyzed, forms acicular texture battle array Row.
- 19. the manufacture method of plasma generator electrode as claimed in claim 17, it is characterised in that described patterned Catalyst film includes lower film, and the lower film and substrate contact, the material of the lower film is noble metal, is used for It is catalyzed the etching of the substrate.
- 20. the manufacture method of plasma generator electrode as claimed in claim 19, it is characterised in that described patterned Catalyst film also includes topmost thin film, and the topmost thin film is located on the lower film, and the material of the topmost thin film is Iron, gold, silver, titanium, palladium, nickel, gallium, zinc and its any of alloy and/or oxide or its combination, for being catalyzed the needle-like The growth of structure.
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| PCT/CN2018/119490 WO2019109966A1 (en) | 2017-12-07 | 2018-12-06 | Plasma generator electrode and manufacturing method thereof |
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| WO2019109966A1 (en) * | 2017-12-07 | 2019-06-13 | 上海睿筑环境科技有限公司 | Plasma generator electrode and manufacturing method thereof |
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