CN107818940B - Electrostatic chuck device and temperature control method thereof - Google Patents
Electrostatic chuck device and temperature control method thereof Download PDFInfo
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- CN107818940B CN107818940B CN201711243093.0A CN201711243093A CN107818940B CN 107818940 B CN107818940 B CN 107818940B CN 201711243093 A CN201711243093 A CN 201711243093A CN 107818940 B CN107818940 B CN 107818940B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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Abstract
The invention discloses an electrostatic chuck device and a temperature control method thereof. The electrostatic chuck device comprises an electrostatic chuck arranged in the process chamber; a cold source supply pipeline, which is disposed in the substrate of the electrostatic chuck device and has a cooling end directed to the back of the wafer and a cold supply end communicated with an external cooling gas source; a pressure control unit for controlling the working pressure of the cold source introduced to the back of the wafer; a temperature control unit disposed on the cold source supply pipeline for controlling the temperature of the cooling end of the cold source supply pipeline; and the exhaust device is communicated with an external cooling gas source. The temperature control unit is used for controlling the temperature of the cooling end on the back of the imported wafer, so that the problem that the condensation temperature of a process reaction product is low, adhesion is formed at the outlet of a sealing edge flow field of the electrostatic chuck device and becomes a pollution source can be effectively solved, a process selection scheme and a process formula window can be increased, the defects of the wafer are reduced, the maintenance period of a cavity is prolonged, and the productivity of a workshop is increased.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an electrostatic chuck device and a temperature control method thereof.
Background
Plasma etching is an important process for wafer processing, and as the characteristic dimension of wafer processing advances from micron-scale to nanometer-scale technology nodes, the control requirement of plasma etching on defects is more and more strict. Among the many factors that contribute to plasma etch defects, the industry has generally ignored one of the most significant factors, namely the cooling system of the electrostatic chuck device.
An Electrostatic Chuck (E-Chuck) is an important component for wafer fixing and temperature control, which holds a wafer by Electrostatic force generated by an insulating layer and stabilizes the surface of the wafer at a set temperature by cooling gas in a channel of the insulating layer and circulating cooling liquid in a susceptor. Because the wafer temperature is an important factor influencing the etching rate and uniformity, the chemical reaction in etching is very sensitive to the temperature, and the tiny temperature difference can cause great etching deviation, the good etching effect requires that the wafer has stable and uniform temperature distribution.
Although the wafer is in direct contact with the insulating layer of the electrostatic chuck, the cooling gas between the electrostatic chuck and the wafer maintains a certain pressure, and the pressure makes the cooling gas escape to the vacuum cavity. Meanwhile, the gas escapes to bring the particles on the electrostatic chuck into the vacuum chamber, thereby causing wafer defects.
In order to reduce the defects of the wafer and improve the process stability, an electrostatic chuck device is sought which can not only effectively solve the problem that the condensation temperature of the process reaction product is low, and the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and becomes a pollution source, but also can increase the process selection scheme and the process formula window, reduce the defects of the wafer, prolong the maintenance period of the cavity, and increase the productivity of the workshop, which is one of the technical problems to be solved by the technical personnel in the field.
Therefore, in order to solve the problems in the prior art, designers of the present application have been actively studying and improving through years of experience in the industry, and thus have invented an electrostatic chuck device and a temperature control method thereof.
Disclosure of Invention
The invention provides an electrostatic chuck device aiming at the defects of a wafer caused by the fact that particles on an electrostatic chuck are carried into a vacuum cavity when cooling gas escapes to the vacuum cavity under the action of pressure in the prior art.
It is still another object of the present invention to provide a temperature control method for an electrostatic chuck device, which is capable of preventing the particles on the electrostatic chuck from being brought into the vacuum chamber when the cooling gas escapes to the vacuum chamber under the pressure of the cooling gas, thereby causing the wafer defect.
In order to achieve the objective of the present invention, the present invention provides an electrostatic chuck device, which comprises an electrostatic chuck disposed in a process chamber and used for adsorbing a wafer to be processed; a cold source supply pipeline, disposed in the substrate of the electrostatic chuck device, wherein a cooling end of the cold source supply pipeline is directed to the back of the wafer to be processed and used for cooling the wafer to be processed, and a cold supply end of the cold source supply pipeline is communicated with an external cooling gas source; the pressure control unit is arranged on the cold source supply pipeline and used for controlling the working pressure of the cold source for guiding the external cooling gas source into the back of the wafer to be processed through the cold source supply pipeline; the temperature control unit is arranged on the cold source supply pipeline, is connected with the external cooling gas source through the pressure control unit and is used for controlling the temperature of the cooling end of the cold source supply pipeline; and the exhaust device is communicated with the external cooling gas source through the pressure control unit.
Optionally, the source of ambient cooling gas is helium.
Optionally, a channel is disposed on the insulating layer of the electrostatic chuck.
To achieve another object of the present invention, the present invention provides a method for controlling temperature of an electrostatic chuck device, comprising:
step S1 is executed: setting the pressure control unit according to the process requirement in the process chamber, and adjusting the pressure of the cold source entering the process chamber from the cold source supply pipeline;
step S2 is executed: the temperature of the cooling end of the cold source supply pipeline leading into the back of the wafer to be processed is further controlled by setting the temperature control unit according to the solidification temperature of the reaction product in the process chamber and the process temperature of the electrostatic adsorption device.
Optionally, the temperature of the cooling end of the cooling source supply pipe introduced to the back surface of the wafer to be processed is sufficient for cooling the wafer to be processed, and simultaneously, the solidification of the reaction product in the process chamber is avoided.
Optionally, the temperature of the cooling end of the cooling source supply pipe leading to the back side of the wafer to be processed is at least lower than the process temperature of the electrostatic chuck device.
Optionally, the temperature of the cooling end of the cooling source supply pipe leading to the back side of the wafer to be processed is not equal to the solidification temperature of the reaction product in the process chamber.
Optionally, the curing temperature of the reaction product in the process chamber is 45 ℃ or lower, the process temperature of the electrostatic chuck device is 50-60 ℃, and the temperature of the cooling end of the cooling source supply pipeline, which is led to the back surface of the wafer to be processed, is set to be 45-55 ℃ by the temperature control unit.
In summary, the electrostatic chuck device of the present invention controls the temperature of the cooling end introduced to the back side of the wafer to be processed through the temperature control unit, which not only can effectively solve the problem that the condensation temperature of the process reaction product is low, the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and the product becomes a pollution source, but also can increase the process selection scheme and the process recipe window, reduce the wafer defect, prolong the chamber maintenance period, and increase the workshop productivity.
Drawings
FIG. 1 is a schematic structural view of an electrostatic chuck device according to the present invention;
FIG. 2 is a flow chart illustrating a method for controlling temperature of the electrostatic chuck device according to the present invention.
Detailed Description
The invention will be described in detail with reference to the following embodiments and drawings for illustrating the technical content, structural features, and achieved objects and effects of the invention.
Plasma etching is an important process for wafer processing, and as the characteristic dimension of wafer processing advances from micron-scale to nanometer-scale technology nodes, the control requirement of plasma etching on defects is more and more strict. Among the many factors that contribute to plasma etch defects, the industry has generally ignored one of the most significant factors, namely the cooling system of the electrostatic chuck.
An Electrostatic Chuck (E-Chuck) is an important component for wafer fixing and temperature control, which holds a wafer by Electrostatic force generated by an insulating layer and stabilizes the surface of the wafer at a set temperature by cooling gas in a channel of the insulating layer and circulating cooling liquid in a susceptor. Because the wafer temperature is an important factor influencing the etching rate and uniformity, the chemical reaction in etching is very sensitive to the temperature, and the tiny temperature difference can cause great etching deviation, the good etching effect requires that the wafer has stable and uniform temperature distribution.
Although the wafer is in direct contact with the insulating layer of the electrostatic chuck, the cooling gas between the electrostatic chuck and the wafer maintains a certain pressure, and the pressure makes the cooling gas escape to the vacuum cavity. Meanwhile, the gas escapes to bring the particles on the electrostatic chuck into the vacuum chamber, thereby causing wafer defects.
In order to reduce the defects of the wafer and improve the process stability, an electrostatic chuck device is sought which can not only effectively solve the problem that the condensation temperature of the process reaction product is low, and the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and becomes a pollution source, but also can increase the process selection scheme and the process formula window, reduce the defects of the wafer, prolong the maintenance period of the cavity, and increase the productivity of the workshop, which is one of the technical problems to be solved by the technical personnel in the field.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an electrostatic chuck device according to the present invention. The electrostatic chuck device 1 includes: an electrostatic chuck 10 disposed in a process chamber (not shown) for chucking a wafer (not shown) to be processed; a cold source supply pipeline 11 disposed in the substrate 12 of the electrostatic chuck device 1, wherein a cooling end 111 of the cold source supply pipeline 11 is directed to the back of the wafer to be processed and used for cooling the wafer to be processed, and a cooling end 112 of the cold source supply pipeline 11 is communicated with an external cooling gas source 13; a pressure control unit 14, disposed on the cold source supply pipeline 11, for controlling the working pressure of the cold source for guiding the external cooling gas source 13 into the back of the wafer to be processed through the cold source supply pipeline 11; a temperature control unit 15, disposed on the cold source supply pipeline 11, and connected to the external cooling gas source 13 through the pressure control unit 14, for controlling the temperature of the cooling end 111 of the cold source supply pipeline 11; and the exhaust device 16 is communicated with the external cooling gas source 13 through the pressure control unit 14.
As will be readily appreciated by those skilled in the art, ideally the wafer to be processed is in full surface contact with the insulating layer (not shown) of the electrostatic chuck apparatus 1, which is a solid heat transfer problem. However, in the actual production process, the contact surface between the wafer and the insulating layer of the electrostatic chuck device 1 is not completely in surface contact, and the actual contact area is about 5% to 10% due to the roughness, so that the contact behavior is changed from ideal surface-to-surface contact to actual point-to-point contact, and a contact gap (not shown) is generated.
On the other hand, the process chamber in which the electrostatic chuck device 1 operates is a vacuum environment, and the vacuum heat conduction coefficient in the contact gap is very low. In order to enhance the heat dissipation effect in the contact gap, helium is introduced into the contact gap as an external cooling gas source 13 with good heat conduction effect, so that the cooling effect on the wafer is enhanced. In order to uniformly distribute the helium gas as the external cooling gas source 13 on the backside of the wafer to be processed, it is preferable that the insulating layer of the electrostatic chuck 10 is provided with channels (not shown) for uniformly dispersing the external cooling gas source 13 introduced to the backside of the wafer.
In order to more intuitively disclose the technical solution of the present invention and to highlight the beneficial effects of the present invention, the temperature control method of the electrostatic chuck device will now be described with reference to the following embodiments. In the specific embodiment, the positions of the "back side" of the wafer, the sequence of the temperature control steps, and the like are well known to those skilled in the art, and are not described herein, and the illustration and the description of the present invention should not be construed as limiting the technical solution of the present invention.
Referring to fig. 2 in conjunction with fig. 1, fig. 2 is a flow chart illustrating a temperature control method of the electrostatic chuck device according to the present invention. The temperature control method of the electrostatic chuck device comprises the following steps:
step S1 is executed: setting the pressure control unit 14 to adjust the pressure of the cold source entering the process chamber from the cold source supply pipeline 11 according to the process requirement in the process chamber;
step S2 is executed: the temperature of the cooling end 111 of the cooling source supply pipe 11 leading to the back of the wafer to be processed is controlled by setting the temperature control unit 15 according to the solidification temperature of the reaction product in the process chamber and the process temperature of the electrostatic adsorption device 1.
Wherein the temperature of the cooling end 111 of the cooling source supply pipe 11 introduced to the back surface of the wafer to be processed is satisfied for cooling the wafer to be processed, and simultaneously, the solidification of the reaction product in the process chamber is avoided, so as to reduce the deposition of the reaction product on the surface edge of the electrostatic chuck 10. That is, the temperature of the cooling end 111 of the heat source supply pipe 11 introduced to the backside of the wafer to be processed is at least lower than the process temperature of the electrostatic chuck device 1. The temperature of the cooling end 111 of the heat source supply pipe 11 introduced to the backside of the wafer to be processed is not equal to the solidification temperature of the reaction product in the process chamber.
More specifically, for example, the solidification temperature of the reaction product in the process chamber is 45 ℃ or less, the process temperature of the electrostatic chuck device 1 is 50 to 60 ℃, and the temperature of the cooling end 111 of the cooling source supply pipe 11 introduced to the back surface of the wafer to be processed is set to 45 to 55 ℃ by the temperature control unit 15. Obviously, at the set temperature, the cooling of the wafer to be processed is satisfied, and the solidification of the reaction product in the process chamber is avoided, so as to reduce the deposition of the reaction product on the edge of the surface of the electrostatic chuck 10.
In summary, the electrostatic chuck device of the present invention controls the temperature of the cooling end introduced to the back side of the wafer to be processed through the temperature control unit, which not only can effectively solve the problem that the condensation temperature of the process reaction product is low, the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and the product becomes a pollution source, but also can increase the process selection scheme and the process recipe window, reduce the wafer defect, prolong the chamber maintenance period, and increase the workshop productivity.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (5)
1. An electrostatic chuck device, comprising,
the electrostatic chuck is arranged in the process chamber and is used for adsorbing the wafer to be processed;
a cold source supply pipeline, disposed in the substrate of the electrostatic chuck device, wherein a cooling end of the cold source supply pipeline is directed to the back of the wafer to be processed and used for cooling the wafer to be processed, and a cold supply end of the cold source supply pipeline is communicated with an external cooling gas source;
the pressure control unit is arranged on the cold source supply pipeline and used for controlling the working pressure of the cold source for guiding the external cooling gas source into the back of the wafer to be processed through the cold source supply pipeline;
the temperature control unit is arranged on the cold source supply pipeline, is connected with the external cooling gas source through the pressure control unit and is used for controlling the temperature of the cooling end of the cold source supply pipeline;
the temperature of the cooling end of the cooling source supply pipeline, which is led into the back of the wafer to be processed, meets the requirement of cooling the wafer to be processed, and simultaneously avoids the solidification of reaction products in the process chamber;
the temperature of the cooling end of the cold source supply pipeline, which is led into the back of the wafer to be processed, is at least lower than the process temperature of the electrostatic chuck device;
the temperature of the cooling end of the cooling source supply pipeline, which is led into the back surface of the wafer to be processed, is not equal to the solidification temperature of the reaction product in the process chamber;
and the exhaust device is communicated with the external cooling gas source through the pressure control unit.
2. The electrostatic chucking device of claim 1, wherein said source of ambient cooling gas is helium.
3. The electrostatic chuck device of claim 1, wherein the insulating layer of the electrostatic chuck is provided with a channel.
4. A method of controlling the temperature of an electrostatic chuck assembly as claimed in claim 1, wherein the method of controlling the temperature of an electrostatic chuck assembly comprises:
step S1 is executed: setting the pressure control unit according to the process requirement in the process chamber, and adjusting the pressure of the cold source entering the process chamber from the cold source supply pipeline;
step S2 is executed: according to the solidification temperature of the reaction product in the process chamber and the process temperature of the electrostatic adsorption device, the temperature of the cooling end of the cold source supply pipeline, which is led into the back of the wafer to be processed, is further controlled by setting the temperature control unit;
the temperature of the cooling end of the cooling source supply pipeline, which is led into the back of the wafer to be processed, meets the requirement of cooling the wafer to be processed, and simultaneously avoids the solidification of reaction products in the process chamber;
the temperature of the cooling end of the cold source supply pipeline, which is led into the back of the wafer to be processed, is at least lower than the process temperature of the electrostatic chuck device;
the temperature of the cooling end of the cooling source supply pipeline, which is led into the back surface of the wafer to be processed, is not equal to the solidification temperature of the reaction product in the process chamber.
5. The method of claim 4, wherein a curing temperature of a reaction product in the process chamber is 45 ℃ or lower, a process temperature of the electrostatic chuck is 50-60 ℃, and a temperature of the cooling end of the cooling source supply pipe leading to the backside of the wafer to be processed is set to 45-55 ℃ by the temperature control unit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711243093.0A CN107818940B (en) | 2017-11-30 | 2017-11-30 | Electrostatic chuck device and temperature control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711243093.0A CN107818940B (en) | 2017-11-30 | 2017-11-30 | Electrostatic chuck device and temperature control method thereof |
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| CN107818940A CN107818940A (en) | 2018-03-20 |
| CN107818940B true CN107818940B (en) | 2020-04-10 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111987030A (en) * | 2019-05-22 | 2020-11-24 | 芯恩（青岛）集成电路有限公司 | Semiconductor device and method for improving wafer adsorption capacity of electrostatic chuck |
| CN112530779B (en) * | 2020-11-10 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Temperature control system |
| CN114551202A (en) * | 2020-11-25 | 2022-05-27 | 中国科学院微电子研究所 | Electrostatic chuck, processing chamber and semiconductor processing equipment |
| CN113421814B (en) * | 2021-06-18 | 2022-05-27 | 长江存储科技有限责任公司 | Semiconductor structure processing machine, operation method and electrostatic chuck |
| CN114014009A (en) * | 2021-11-22 | 2022-02-08 | 江苏盟星智能科技有限公司 | Intelligent docking station robot plate collecting and releasing machine |
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| US6334311B1 (en) * | 1999-03-05 | 2002-01-01 | Samsung Electronics Co., Ltd. | Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility |
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| CN103177996A (en) * | 2011-12-22 | 2013-06-26 | 中芯国际集成电路制造(北京)有限公司 | Reaction device for processing wafers, electrostatic chuck (ESC) and wafer temperature control method |
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| JP5032269B2 (en) * | 2007-11-02 | 2012-09-26 | 東京エレクトロン株式会社 | Temperature adjusting apparatus and temperature adjusting method for substrate to be processed, and plasma processing apparatus including the same |
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| US6334311B1 (en) * | 1999-03-05 | 2002-01-01 | Samsung Electronics Co., Ltd. | Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility |
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| CN103177996A (en) * | 2011-12-22 | 2013-06-26 | 中芯国际集成电路制造(北京)有限公司 | Reaction device for processing wafers, electrostatic chuck (ESC) and wafer temperature control method |
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