CN107799661A - OLED and dot structure - Google Patents
OLED and dot structure Download PDFInfo
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- CN107799661A CN107799661A CN201711225264.7A CN201711225264A CN107799661A CN 107799661 A CN107799661 A CN 107799661A CN 201711225264 A CN201711225264 A CN 201711225264A CN 107799661 A CN107799661 A CN 107799661A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
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- 229910052737 gold Inorganic materials 0.000 description 3
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the present invention provides a kind of OLED and dot structure.The OLED includes luminescence unit, first electrode and second electrode.The first electrode is arranged on the first edge of the luminescence unit, the second electrode is arranged on the second edge relative with the first edge of the luminescence unit, so that the OLED light emits from the luminescence unit between the first electrode and second electrode.
Description
Technical field
The present invention relates to microelectronics and optoelectronic semiconductor field, in particular to a kind of OLED and dot structure.
Background technology
Existing OLED be all using the electrode layer structure overlapping with organic layer, the light of OLED need to penetrate to
Few layer of transparent electrode can just emit, thus selection of the existing OLED structure to electrode material be normally limited to ITO,
The metal-oxide transparent electrodes such as IZO, the HOMO and lumo energy matching of this kind of electrode and organic material be not it is fine, it is necessary to
The implanted layer of carrier is modified in the interface of electrode and organic layer, increases the preparation technology of device, and metal oxide is saturating
The usual property of prescribed electrode is crisp and ductility is insufficient, can influence the bending performance of panel.
The content of the invention
In view of this, it is an object of the invention to provide a kind of OLED and dot structure, by the light extraction of OLED
The flow direction of electric current is separated in direction and device, electrode layer need not be passed through to penetrate so as to the light of OLED transmitting
Go out, eliminate the reliance on transparency electrode, so as to expand the optional scope of electrode material, therefore device architecture of the present invention can be real
Existing ITO-free, it can also be used to realize Flexible Displays or Transparence Display technology.
A kind of OLED provided in an embodiment of the present invention, the OLED include luminescence unit, first electrode and the
Two electrodes；
The first electrode is arranged on the first edge of the luminescence unit, and the second electrode is arranged on the luminous list
The second edge relative with the first edge of member, so that the OLED light is from the first electrode and second electrode
Between luminescence unit transmitting.
Preferably, the distance between first electrode and second electrode are between 50nm-1000nm.
Preferably, the distance between first electrode and second electrode are between 100nm-300nm.
Preferably, first electrode and the second electrode height is between 50nm-2000nm.
Preferably, first electrode and the second electrode height is between 200nm-500nm.
Preferably, the ratio of first electrode and the second electrode height and the distance between first electrode and second electrode
1:1 to 3:Between 1.
Preferably, first electrode selected materials be gold, platinum, copper, tungsten, molybdenum, nickel, silicon, ITO and graphene in any one or
It combines the combination electrode formed.
Preferably, second electrode selected materials are that any one in aluminium, magnesium, silver, silicon and graphene or its combination are formed
Combination electrode.
Transparency electrode is no longer necessary condition for OLED in the present embodiment, therefore can be reduced transparent to ITO etc.
The dependence of electrode, the demand to rare element In is reduced, electrode and more effective implanted layer material at organic layer interface can be excavated
Material, the injection efficiency of carrier is improved, to improve device performance.
Preferably, the luminescence unit is in bar shaped or shaped form.
Curve is in strip by the way that the luminescence unit is made, or is bent, can be filled in any geometric figure,
So as to increase the area of luminescence unit, and then lift the overall brightness of luminescence unit.
Preferably, the shape that the luminescence unit is S-type or multiple S type parts head and the tail are formed by connecting.
Preferably, the first electrode is the combed electricity being staggered corresponding with the luminescence unit with second electrode
Pole.
Preferably, the luminescence unit twist, first electrode and second electrode corresponding to each layer of luminescence unit
Form corresponding with luminescence unit spiral shape, the OLED also includes spiral shape insulating barrier, and spiral shape insulating barrier is along institute
OLED inner ring is stated around setting, the electrode of inner ring is wound to the electrode of the inner ring and outer ring when on the outside of the electrode of outer ring
Electrode separate.
Preferably, the OLED also includes spiral shape insulating barrier, and spiral shape insulating barrier is along in the OLED
The electrode of inner ring is wound to when on the outside of the electrode of outer ring around setting and separates the electrode of the electrode of the inner ring and outer ring by ring.
Preferably, the OLED also includes reflecting layer, and the reflecting layer is arranged on the OLED away from light extraction
The side in face, the reflecting layer are metallic reflector or Distributed Bragg Reflection layer.
Preferably, the OLED also includes encapsulated layer, and the encapsulated layer is arranged on luminescence unit surface；Or,
The OLED also include encapsulation diffusion layer, it is described encapsulation diffusion layer be arranged on luminescence unit, first electrode and
The surface of second electrode.
Preferably, the height of the first electrode and second electrode is higher than the height of the luminescence unit, so that encapsulated layer
Or encapsulation diffusion layer is covered in the first electrode, second electrode and luminescence unit and forms sunk structure.
The embodiment of the present invention also provides a kind of dot structure, and the dot structure includes multiple above-mentioned OLEDs；Institute
The first electrode for stating OLED is connected with thin film transistor (TFT) respectively, is believed with receiving the driving transmitted by the thin film transistor (TFT)
Number, luminescence unit lights corresponding to control.
Preferably, multiple OLEDs of the dot structure are stacked is set.
Preferably, multiple OLEDs of the dot structure are set up in parallel.
By the way that the stacked setting of multiple OLEDs can be reduced to the size of dot structure, resolution ratio can be also improved；It is logical
Crossing multiple OLEDs being set up in parallel can prevent from influencing each other between different OLEDs.
Preferably, the dot structure also includes diffusion layer, the diffusion layer be arranged on the OLED close to going out
Smooth surface side.
By setting diffusion layer that the display effect of dot structure can be made more preferably uniform.
Preferably, the dot structure also includes encapsulated layer, and the encapsulated layer is arranged on luminescence unit and the diffusion layer
Between.
Compared with prior art, the OLED and dot structure of the embodiment of the present invention, by by the first electrode and
Second electrode is arranged on the two edges of the luminescence unit, shows OLED light and is not passed through the first electrode and the second electricity
Pole, so as to which the selection to first electrode and the material of second electrode can be with unrestricted, first electrode and second electrode can be selected
Non-transparent electrode, first electrode and second electrode can also be selected all without the light for blocking the luminescence unit by selecting transparency electrode.
To enable the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by embodiment it is required use it is attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 is the structural representation for the OLED that present pre-ferred embodiments provide.
Fig. 2 is the structural representation for the OLED that another preferred embodiment of the present invention provides.
Fig. 3 is the structural representation of another angle for the OLED that present pre-ferred embodiments provide.
Fig. 4 is the structural representation of the another angle for the OLED that present pre-ferred embodiments provide.
Fig. 5 is the structural representation for the dot structure that present pre-ferred embodiments provide.
Icon：10- dot structures；100-OLED devices；110- luminescence units；112- blue-light-emitting units；114- greens
Luminescence unit；116- emitting red light units；120- first electrodes；130- second electrodes；140- substrates；150- insulating barriers；152-
Screen layer；160- thin film transistor (TFT)s；162- first film transistors；The thin film transistor (TFT)s of 164- second；The film crystals of 166- the 3rd
Pipe；170- reflecting layer；180- encapsulated layers；181- encapsulates diffusion layer；190- diffusion layers.
Embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Generally exist
The component of the embodiment of the present invention described and illustrated in accompanying drawing can be configured to arrange and design with a variety of herein.Cause
This, the detailed description of the embodiments of the invention to providing in the accompanying drawings is not intended to limit claimed invention below
Scope, but it is merely representative of the selected embodiment of the present invention.Based on embodiments of the invention, those skilled in the art are not doing
The every other embodiment obtained on the premise of going out creative work, belongs to the scope of protection of the invention.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent accompanying drawing in individual accompanying drawing.Meanwhile the present invention's
In description, term " first ", " second " etc. are only used for distinguishing description, and it is not intended that instruction or hint relative importance.
In description of the invention, it is necessary to explanation, the orientation or position of the instruction such as term " on ", " under ", " interior ", " outer "
Relation is based on orientation shown in the drawings or position relationship, or the orientation or position usually visited during the invention product use
Relation is put, it is of the invention necessary with simplified description, rather than the device or element of instruction or hint meaning to be for only for ease of description
With specific orientation, with specific azimuth configuration and operation, therefore can not be construed to the present invention limitation.
In description of the invention, it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ", " peace
Dress ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be directly connected to or be indirectly connected with by intermediary, can be with
It is the connection of two element internals.For the ordinary skill in the art, it can understand that above-mentioned term exists with concrete condition
Concrete meaning in the present invention.
Fig. 1 is the structural representation for the OLED 100 that present pre-ferred embodiments provide.As shown in figure 1, the OLED
Device 100 includes：The OLED 100 includes luminescence unit 110, first electrode 120 and second electrode 130.Described first
Electrode 120 is arranged on the first edge of the luminescence unit 110, and the second electrode 130 is arranged on the luminescence unit 110
The second edge relative with the first edge, so that the light of the OLED 100 is shown from the first electrode 120 and second
Luminescence unit 110 between electrode 130 passes through display.
In the present embodiment, the luminescence unit 110 is produced on a substrate 140.
In the present embodiment, first electrode 120 is produced on the substrate 140, the first edge with the luminescence unit 110
Contact；The second electrode 130 is also produced on the substrate 140, is contacted with the second edge of the luminescence unit 110.This
In embodiment, the first electrode 120, luminescence unit 110 and second electrode 130 make at grade.
, can be with by the way that the first electrode 120, luminescence unit 110 and second electrode 130 are made at grade
The display of OLED 100 is set to be shown from the region between first electrode 120 and second electrode 130, first electrode 120 and second
The light that will not block OLED 100 of electrode 130, therefore, the He of first electrode 120 of the OLED 100 in the present embodiment
The selection of second electrode 130 does not have the requirement of light transmittance, can be independent of transparency electrodes such as ITO, IZO, so that second electrode 130
With second electrode 130 transparent material can be selected to select nontransparent material.
In the present embodiment, first electrode 120 and second electrode 130 can be according to the energy of the organic material of luminescence unit 110
Level-density parameter is carried out with the material of feature selecting first electrode 120 and second electrode 130.
In one embodiment, the first electrode 120 is used as driving electrodes, can select high work function material, example
Such as, material of the selection of first electrode 120 with the work function higher than 4eV.For example, the material of first electrode 120 includes conductive gold
Belong to oxide, for example, the compound electric that any one in gold, platinum, copper, tungsten, molybdenum, nickel, silicon, ITO and graphene or its combination are formed
Pole.
In one embodiment, the first electrode 120 is used as negative electrode, can select low-work-function material, for example, the
Material of two electrodes 130 selection with the work function less than 4eV.Second electrode 130 in the present embodiment can material selection be aluminium,
The combination electrode that any one in magnesium, silver, silicon and graphene or its combination are formed.
For example, the In in ITO is rare earth element, reserves are few, and price is high, therefore, it is necessary to when considering cost of manufacture, described the
One electrode 120 and second electrode 130 can select other materials in addition to ITO to make electrode.For another example because ITO is crisp
Property, it is therefore desirable to when making flexible OLED devices 100, the first electrode 120 and second electrode 130 can select to remove ITO
Other materials in addition make electrode.
In the present embodiment, the OLED 100 also includes encapsulated layer 180, and the encapsulated layer 180 is arranged on luminescence unit
110 surfaces.
In the present embodiment, as shown in Fig. 2 the OLED also includes encapsulation diffusion layer 181, the encapsulation diffusion layer
181 are arranged on the surface of luminescence unit 110, first electrode 120 and second electrode 130.In the present embodiment, as shown in Fig. 2 described
The height of first electrode 120 and second electrode 130 can be higher than the height of the luminescence unit 110, the encapsulation diffusion layer 181
It is embedded in the first electrode 120, the groove that luminescence unit 110 is formed with second electrode 130.In one embodiment,
The encapsulation diffusion layer 181 is produced on the luminescence unit 110, first electrode 120 and second electrode 130 by way of deposition
Surface.In the present embodiment, the encapsulation diffusion layer 181 can use optical index to be more than used in the luminescence unit 110
Material.Corresponding refractive index is obtained by the structure of above-mentioned depression and the selection of the encapsulation material of diffusion layer 181 and is advantageous to OLED devices
The light of part takes out.Further, optical scatter can also be included in the encapsulation diffusion layer 181, so that the encapsulation diffusion
Layer 181 has the effect that light spreads, to realize encapsulated layer and the two-in-one effect of diffusion layer.Encapsulated layer and diffusion layer is two-in-one
Design method can make manufacture craft simpler.
In the present embodiment, referring to Fig. 2, the height of the first electrode 120 and second electrode 130 is higher than the hair
The height of light unit 110, so that encapsulated layer or encapsulation diffusion layer are covered in the first electrode 120, second electrode 130 and lighted
Unit 110 forms sunk structure.The light extraction efficiency and visible angle of OLED can be improved by the groove structure.
The OLED 100 of the embodiment of the present invention, by the way that the first electrode 120 and second electrode 130 are arranged on into institute
The two edges of luminescence unit 110 are stated, the light of OLED 100 is shown and is not passed through the first electrode 120 and second electrode 130,
So as to which the selection to first electrode 120 and the material of second electrode 130 can be with unrestricted, first electrode 120 and second electrode
130 can select transparency electrode to select non-transparent electrode, and first electrode 120 and second electrode 130 are all without blocking
State the light of luminescence unit 110.
In the present embodiment, the distance of first electrode 120 and second electrode 130 is between 50nm-1000nm, for example, described
The distance of first electrode 120 and second electrode 130 can be 50nm, 100nm, 150nm, 300nm, 1000nm etc..The present embodiment
In, the distance of the first electrode 120 and second electrode 130 can be according to the load of the organic material in the luminescence unit 110
Stream transport factor is adjusted.For example, the carrier mobility of the organic material in the luminescence unit 110 is higher, the first electricity
Pole 120 and the distance of second electrode 130 are bigger；The carrier mobility of organic material in the luminescence unit 110 is lower, the
One electrode 120 and the distance of second electrode 130 are smaller.
In the present embodiment, first electrode 120 and second electrode 130 height can be between 50nm-2000nm, preferably
In 200nm-500nm.For example, the thickness of the first electrode 120 and second electrode 130 can be 50nm, 100nm,
150nm, 200nm, 300nm, 500nm, 2000nm etc..
In the present embodiment, the first electrode 120 and the height of second electrode 130 and first electrode 120 and second electrode 130
The distance between ratio 1:1 to 3:Between 1.First electrode 120 and the height of second electrode 130 and first electrode 120 and
When the ratio of the distance between two electrodes 130 is high, fiber waveguide benefit is might have, amount of light can be improved.
In the present embodiment, as shown in figure 3 or 4, the luminescence unit 110 is in bar shaped or shaped form.Wherein Fig. 3 and Fig. 4 are
Along the structural representation at the visual angle in I directions.
In the present embodiment, it is in strip or shaped form by the way that the luminescence unit 110 is set, luminescence unit 110 can be made
Display screen of different shapes can preferably be filled.
In one embodiment, as shown in figure 3, the luminescence unit 110 is S-type or arc type, W types.Again or, institute
State the shape that luminescence unit 110 is formed by connecting in multiple S type parts, arc type, W types head and the tail.The first electrode 120 and second
Electrode 130 is the comb-type electrode being staggered corresponding with the luminescence unit 110.In the present embodiment, the luminescence unit 110
It can be the broken line type luminescence unit 110 that smooth shaped form or a plurality of linear pattern luminescence unit 110 are formed by connecting.
Wherein, the luminescence unit 110 shown in Fig. 3 is the broken line type luminescence unit 110 that a plurality of linear pattern luminescence unit 110 is formed by connecting.
In another embodiment, as shown in figure 4, the luminescence unit 110 twist, each layer of luminescence unit
First electrode 120 corresponding to 110 and second electrode 130 are also formed and 110 corresponding spiral shape of luminescence unit, the OLED
100 also include spiral shape insulating barrier, and spiral shape insulating barrier surround along the inner ring of OLED 100 and set, by inner ring
Electrode is wound to when on the outside of the electrode of outer ring and separates the electrode of the electrode of the inner ring and outer ring.
In the present embodiment, the material of luminescence unit 110 can be organic molecule, polymer and its mixture.The hair
Light unit 110 can be prepared by way of being deposited or printing.The embodiment of the present invention is not with the production method of luminescence unit 110
It is limited.
In other embodiments, the OLED 100 can also include reflecting layer 170.
During making, the reflecting layer 170 is produced on the substrate 140, the first electrode 120, second electrode 130 and
Luminescence unit 110 is produced on the reflecting layer 170.
In one embodiment, the reflecting layer 170 can be metallic reflection.Further, the reflecting layer 170 is
During metallic reflector 170, the reflecting layer 170 and the first electrode 120, luminescence unit 110 and the place of second electrode 130
Insulating barrier is provided between layer, to avoid the metallic reflector 170 from causing short circuit with first electrode 120 or second electrode 130.
The metallic reflector 170 can also be as the 3rd electrode, for controlling the charge density of the luminescence unit 110, regulation and control hair
Optical property.In present embodiment, the insulating barrier is produced on the reflecting layer 170 and the first electrode 120, luminescence unit
110 and the institute of second electrode 130 between layers.
In another embodiment, the reflecting layer 170 can also be Distributed Bragg Reflection layer 170
(distributed Bragg reflection, DBR reflecting layer 170).
The omission of the light of OLED 100 can be reduced by increasing reflecting layer 170 in the OLED 100, makes pixel
The display effect of unit is more preferable.
The embodiment of the present invention also provides a kind of dot structure 10, as shown in figure 5, the dot structure 10 is including multiple above-mentioned
The OLED 100 that embodiment provides；The first electrode 120 of the OLED 100 is connected with thin film transistor (TFT) 160 respectively,
To receive the drive signal transmitted by the thin film transistor (TFT) 160, luminescence unit 110 corresponding to control is luminous.
In the present embodiment, the dot structure 10 includes blue-light-emitting unit 112, green emitting unit 114 and red hair
Light unit 116.In one embodiment, the blue-light-emitting unit 112 is positioned close in a Rotating fields of exiting surface；Institute
Emitting red light unit 116 is stated to set in a Rotating fields farthest apart from exiting surface.Because blue light is the most short light of three primary colors wavelength,
The wavelength of feux rouges is the most long light of three primary colors wavelength, therefore luminescence unit corresponding to blue light 110 is arranged on apart from exiting surface most
Near position, luminescence unit 110 corresponding to feux rouges are arranged on the position farthest apart from exiting surface, due to different luminescent material energy gaps
Difference, it is possible to reduce the light absorbs between luminescence unit 110, improve the display effect of pixel cell.
In the present embodiment, multiple OLEDs 100 of the dot structure 10 can be stacked setting, multiple OLEDs
100 can also be set up in parallel.
Dot structure 10 provided in an embodiment of the present invention, by the way that the lamination of dot structure 10 is set, pixel can be made
Structure 10 it is smaller, resolution ratio is also higher.Mutual OLED can be prevented by the way that multiple OLEDs 100 are set up in parallel
Interfering between device 100.Those skilled in the art can be according to demand by the OLED of the dot structure 10
100 are arranged to laminated construction or parallel construction.
In one embodiment, the dot structure 10 may include three-decker, set one to light in every Rotating fields
Unit 110.
In another embodiment, the dot structure 10 may include three-decker, the first Rotating fields and second layer knot
Structure includes OLED 100 corresponding to a luminescence unit 110 respectively, and third layer structure setting has two luminescence units 110 right
The OLED 100 answered.
In another embodiment, the dot structure 10 includes double-layer structure, the first Rotating fields and the second Rotating fields
Include OLED 100 corresponding to two luminescence units 110 respectively.
In another embodiment, the dot structure 10 includes double-layer structure, and the first Rotating fields include one and lighted
OLED 100 corresponding to unit 110, the second Rotating fields include OLED 100 corresponding to two luminescence units 110.
In another embodiment, the dot structure 10 includes four-layer structure, and one is included per Rotating fields and is lighted
OLED 100 corresponding to unit 110.
In another embodiment, the dot structure 10 includes a Rotating fields, corresponding to all luminescence units 110
OLED 100 is disposed in parallel in the Rotating fields.
In one embodiment, as shown in figure 5, the first electrode 120 in every Rotating fields of the dot structure 10 is divided
It is not connected with a thin film transistor (TFT) 160.As shown in figure 5, first electrode 120 is connected with first corresponding to blue-light-emitting unit 112
Thin film transistor (TFT) 162；First electrode 120 corresponding to green emitting unit 114 is connected with the second thin film transistor (TFT) 164；Red hair
First electrode 120 is connected with the 3rd thin film transistor (TFT) 166 corresponding to light unit 116.
In the present embodiment, connected with the first electrode 120 of the corresponding sub-pixel structure 10 being stacked in adjacent two layers structure
Thin film transistor (TFT) 160 be arranged at the same side of dot structure 10, be provided with shielding between the two neighboring thin film transistor (TFT) 160
Layer 152.
In one embodiment, as shown in figure 5, the screen layer 152 be made as adjacent two layers sub-pixel structure 10 it
Between insulating barrier 150 on the corresponding position of thin film transistor (TFT) 160, for example, the film crystal of first film transistor 162 and second
Be provided with screen layer 152 on insulating barrier 150 between pipe 164, the second thin film transistor (TFT) 164 and the 3rd thin film transistor (TFT) 166 it
Between insulating barrier 150 on be provided with screen layer 152.In another embodiment, the screen layer 152 is built in the film
In transistor 160, for example, the side in first film transistor 162 close to second film crystal is provided with screen layer
152, the side on the second thin film transistor (TFT) 164 close to the 3rd film crystal is provided with a screen layer 152.
Screen layer 152 is set effectively to prevent between two neighboring thin film transistor (TFT) 160 between thin film transistor (TFT) 160
Influence each other.
In the present embodiment, the dot structure 10 also includes diffusion layer 190, and the diffusion layer 190 is arranged on the OLED
The close exiting surface side of device 100.
In the present embodiment, the dot structure 10 also includes encapsulated layer 180, and the encapsulated layer 180 is arranged on luminescence unit
Between 110 and the diffusion layer 190.
The dot structure 10 of the embodiment of the present invention, it is described by the way that the first electrode 120 and second electrode 130 are arranged on
The two edges of luminescence unit 110, show the light of OLED 100 and be not passed through the first electrode 120 and second electrode 130, from
And the selection to first electrode 120 and the material of second electrode 130 can be with unrestricted, first electrode 120 and second electrode 130
Transparency electrode can be selected to select non-transparent electrode, first electrode 120 and second electrode 130 all without blocking the hair
The light of light unit 110.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.It should be noted that：Similar label and letter exists
Similar terms is represented in following accompanying drawing, therefore, once being defined in a certain Xiang Yi accompanying drawing, is then not required in subsequent accompanying drawing
It is further defined and explained.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (10)
1. a kind of OLED, it is characterised in that the OLED includes luminescence unit, first electrode and second electrode；
The first electrode is arranged on the first edge of the luminescence unit, and the second electrode is arranged on the luminescence unit
The second edge relative with the first edge, so that the OLED light is between the first electrode and second electrode
Luminescence unit transmitting.
2. OLED as claimed in claim 1, it is characterised in that the distance between the first electrode and second electrode exist
Between 50nm-1000nm.
3. OLED as claimed in claim 1, it is characterised in that the luminescence unit is in bar shaped or shaped form.
4. OLED as claimed in claim 3, it is characterised in that the luminescence unit is S-type or multiple S type parts head and the tail
The shape being formed by connecting, the first electrode are the combed electricity being staggered corresponding with the luminescence unit with second electrode
Pole.
5. OLED as claimed in claim 3, it is characterised in that twist, each layer is luminous single for the luminescence unit
First electrode corresponding to member and second electrode also form spiral shape corresponding with luminescence unit, and the OLED also includes spiral
The electrode of inner ring, around setting, is wound to outer ring electricity by shape insulating barrier, spiral shape insulating barrier along the OLED inner ring
The electrode of the electrode of the inner ring and outer ring is separated when on the outside of pole.
6. OLED as claimed in claim 1, it is characterised in that the OLED also includes reflecting layer, the reflection
Layer is arranged on side of the OLED away from exiting surface, and the reflecting layer is metallic reflector or Distributed Bragg Reflection
Layer.
7. OLED as claimed in claim 1, it is characterised in that the OLED also includes encapsulated layer, the encapsulation
Layer is arranged on luminescence unit surface；Or,
The OLED also includes encapsulation diffusion layer, and the encapsulation diffusion layer is arranged on luminescence unit, first electrode and second
The surface of electrode.
8. a kind of dot structure, it is characterised in that the dot structure is included described in multiple claim 1-7 any one
OLED；The first electrode of the OLED is connected with thin film transistor (TFT) respectively, passes through the thin film transistor (TFT) to receive
The drive signal of transmission, luminescence unit corresponding to control light.
9. dot structure as claimed in claim 8, it is characterised in that multiple OLEDs of the dot structure are stacked to be set
Put.
10. dot structure as claimed in claim 8, it is characterised in that the dot structure also includes diffusion layer, the diffusion
Layer is arranged on the close exiting surface side of the OLED.
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| CN201711225264.7A CN107799661A (en) | 2017-11-29 | 2017-11-29 | OLED and dot structure |
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| CN201711225264.7A CN107799661A (en) | 2017-11-29 | 2017-11-29 | OLED and dot structure |
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