CN107748487A - A kind of local surface plasma contact direct-write lithography machine levelling device and method - Google Patents
A kind of local surface plasma contact direct-write lithography machine levelling device and method Download PDFInfo
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- CN107748487A CN107748487A CN201711129272.1A CN201711129272A CN107748487A CN 107748487 A CN107748487 A CN 107748487A CN 201711129272 A CN201711129272 A CN 201711129272A CN 107748487 A CN107748487 A CN 107748487A
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- probe
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- silicon chip
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- plane
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
The present invention is a kind of levelling device of litho machine, and the device is used to realize print and photoetching direct write probe leveling in local surface plasma contact direct-write photoetching.The device, on the basis of the absolute zero plane of skew, angular deflection of the silicon chip with probe relative to respective absolute zero plane is measured using the device respectively by two z, realizes silicon chip from initial position to parallel with zero plane, to the process parallel with detecting probe surface.
Description
Technical field
Semiconductor manufacturing equipment technical field, more particularly, to local surface plasma contact direct-write lithography machine print with
A kind of levelling device of photoetching direct write probe leveling.
Background technology
In the epoch of this high speed development, the comprehensive side's aspect for being used for the life of mankind society of semiconductor equipment technology
Face, the characteristic size of integrated circuit constantly reduce, and have been decreased to 10nm, 7nm stage, collection of the litho machine as photoetching technique
Winner, signify the forward position achievement of photoetching technique incessantly, even more multi-disciplinary intersection result.
The method that local surface plasma contact direct-write lithography machine mainly uses is to be connect using CCD amplifying probes with print
Touch the contact condition of plane two vertical direction, by adjusting photoetching probe repeatedly in the drift angle in the two directions, make probe with
Print is consistent in the gap in the two directions, is considered as both leveling optimums.This method needs progressively to adjust repeatedly, adjusts
It is flat inefficient and it is necessary to probe and silicon chip to be in close to contact condition, print may be damaged when adjusting drift angle
Surface influences follow-up photoetching.
The content of the invention
In order to solve leveling precision existing for the levelling device of existing local surface plasma contact direct-write lithography machine
It is not high, complex operation, the problem of leveling efficiency is low.Connect it is an object of the invention to provide a set of applied to local surface plasma
The print of touch direct-write lithography machine and photoetching direct write probe high accuracy, high efficiency levelling device.
In order to realize the purpose of the present invention, the leveling that the present invention is used for local surface plasma contact direct-write lithography machine fills
Put, solving the technical scheme of technical problem includes laser, laser adjustment mounting bracket, laser installation sleeve, print, holds piece
Platform, the dynamic platform of nanometer essence, coarse motion platform, flexible hinge, photoetching direct write probe, probe sleeve, xy are to horizontal two-dimension mobile station, mobile station
Fixed mount, mobile station link, z are to vertically moving platform, five times regualting frame, Position sensitive detectors (PSD), fixed carry on the back
Plate.
Wherein:Laser adjustment mounting bracket clamping laser is fixed on sleeve, on backboard;Probe is mounted in elasticity
By sleeve connection five times regualting frame on hinge, five times regualting frame is fixed on z on vertical displacement platform, and z leads to vertical displacement platform
Cross connecting plate to be connected to two horizontal position moving stage with xy, horizontal position moving stage is fixed on backboard;PSD is fixed on five times regualting frame
On, five times regualting frame is connected on backboard;The dynamic platform of wafer-supporting platform, essence, coarse motion platform form a whole below probe, and silicon chip exists
On wafer-supporting platform.The leveling method of the levelling device of the local surface plasma contact direct-write lithography machine mainly includes following step
Suddenly.
Step 1:The position relationship of levelling device illustratively is fixed and set, regulation laser makes it be radiated at direct write
The upper surface center of probe, the laser after reflection are irradiated on Position sensitive detectors (PSD) receiving screen, form reflection
Hot spot, z is obtained by software processing and is placed in positional information, silicon chip on wafer-supporting platform, immediately below probe.
Step 2:Laser be radiated at probe upper surface first point is initial point, and this puts origin as absolute zero plane
Coordinate is (0,0,0), and by x, y drives five times regualting frame to mobile station, so as to drive probe to carry out x, y to movement, so as to survey
Probe numerical value of the upper difference reflection laser to PSD, obtain z relative to initial point to moving displacement value, while x., y
The value that direction changes can be used as newly point X1 x, y-coordinate value, while the hot spot detected using Position sensitive detectors PSD
Information by software processing obtain z to knots modification, new point X1 z coordinate.So as to obtain coordinates of the X1 in zero plane.
Step 3:Step 2 is repeated several times and obtains the coordinate of multiple new points, fits the plane equation of probe upper surface, counts
Calculate the normal vector of the plane.
Step 4:Laser inclination angle is adjusted, laser is irradiated on silicon chip, through silicon chip refracted laser illumination to position sensing
On the receiving screen of photodetector (PSD), flare is formed, z is obtained to positional information by software processing.
Step 5:Laser be radiated at silicon chip surface first point is initial point, and this point is as the new absolute zero plane of silicon chip
Origin be (0,0,0), the dynamic platform of essence and wafer-supporting platform are driven by coarse motion platform, so as to drive silicon chip to carry out x, y to movement, from
And the upper difference reflection laser of probe is measured to PSD numerical value, z relative to initial point is obtained to moving displacement value, simultaneously
X., the value that y directions change can be used as newly point X1 x, y-coordinate value, while detected using Position sensitive detectors PSD
Facula information by software processing obtain z to knots modification, new point X1 z coordinate.So as to obtain coordinates of the X1 in zero plane.
Step 6:Step 5 is repeated several times and obtains the coordinate of multiple new points, fits the plane equation of silicon chip surface, calculates
Go out the normal vector of the plane.
Step 7:The angular deflection of the relatively absolute positive unit vector of zero plane Z axis of two normal vectors is calculated, passes through nanometer essence
Dynamic platform, which first adjusts silicon chip, makes its normal vector parallel with z forward direction unit vectors, is put down in turnover probes upper surface normal vector with absolute zero
The angular deflection of the positive unit vector of face Z axis, so that silicon chip surface is parallel to each other with photoetching direct write probe.
Wherein, in view of upper and lower surface has the depth of parallelism guarantee when probe is processed, we pass through probe upper surface and silicon chip
Leveling substitutes lower surface and silicon chip leveling.
Wherein, the absolute zero plane of silicon chip and the absolute zero plane in probe upper surface are absolute zero planes of two z to skew, simultaneously
Package unit should be mounted on the air floating platform of isolation vibration, exclude the interference of vibration.
Brief description of the drawings
The levelling device detailed structure view of Fig. 1 local surface plasma contact direct-write lithography machines.
101 stationary backplates.
102 connecting plates.
103 laser installation sleeves.
104 laser mounting and adjusting framves.
105 lasers.
106 z are to displacement platform.
107 five times regualting frames.
108 nanometers of essences move platform.
109 coarse motion platforms.
110 wafer-supporting platforms.
111 silicon chips.
112 photoetching probes.
113 sleeves.
114 Position sensitive detectors (PSD).
115 five times regualting frames.
116 xy are to two-dimensional movement platform.
117 mobile station fixed mounts.
Specific embodiment
Levelling device is fixed on air floating table, air floating table is opened and starts leveling, step 1 after steady:By levelling device
Position relationship illustratively, which fixes, to be set, and regulation laser 105 makes it be radiated at the upper surface center of direct write probe, after reflection
Laser be irradiated on the receiving screen of Position sensitive detectors (PSD) 114, formed flare, obtained by software processing
It is placed in z to positional information, silicon chip 111 on wafer-supporting platform 110, immediately below probe 113;Step 2:Laser is radiated at probe
First point of 113 upper surfaces is initial point, and this point is (0,0,0) as the origin of absolute zero plane, and by x, y is to mobile station
116 drive five times regualting frames, so as to drive probe carry out x, y to movement, so as to measure the upper difference reflection laser of probe
To PSD114 numerical value, the z relative to initial point is obtained to moving displacement value, while the value that x., y direction change can be used as new point
X1 x, y-coordinate value, while obtained using the Position sensitive detectors PSD114 facula informations detected by software processing
To z to knots modification, new point X1 z coordinate.So as to obtain coordinates of the X1 in zero plane;Step 3:Step 2 is repeated several times to obtain
To the coordinate of multiple new points, the plane equation of probe upper surface is fitted, calculates the normal vector of the plane;Step 4:Regulation
The inclination angle of laser 105, makes laser be irradiated on silicon chip 111, through the refracted laser illumination of silicon chip 111 to Position sensitive detectors
(PSD) on 114 receiving screen, flare is formed, z is obtained to positional information by software processing.
Step 5:Laser be radiated at the surface of silicon chip 111 first point is initial point, and this point is put down as new silicon chip absolute zero
The origin in face is (0,0,0), the dynamic platform 108 of essence and wafer-supporting platform 110 is driven by coarse motion platform 109, so as to drive silicon chip 111 to carry out
X, y to movement, so as to measure the upper difference reflection laser of probe 112 to PSD114 numerical value, obtain relative to initial point
Z to moving displacement value, while the value that x., y direction change can be used as newly point X1 x, y-coordinate value, while utilize position sensing
The facula information that photodetector PSD114 is detected by software processing obtain z to knots modification, new point X1 z coordinate.From
And obtain coordinates of the X1 in zero plane;Step 6:Step 5 is repeated several times and obtains the coordinate of multiple new points, fits silicon chip surface
Plane equation, calculate the normal vector of the plane;Step 7:Calculate the relatively absolute positive unit of zero plane Z axis of two normal vectors
The angular deflection of vector, first adjusting silicon chip 111 by the dynamic platform 108 of nanometer essence makes its normal vector parallel with z forward direction unit vectors,
The angular deflection of the upper surface normal vector of turnover probes 112 and the absolute positive unit vector of zero plane Z axis, so that the surface of silicon chip 111
It is parallel to each other with photoetching direct write probe 112.
Claims (4)
1. a kind of levelling device of local surface plasma contact direct-write lithography machine, it is characterised in that include laser, laser
Mounting bracket, laser installation sleeve are adjusted, print, wafer-supporting platform, the dynamic platform of nanometer essence, coarse motion platform, flexible hinge, photoetching direct write are visited
Pin, probe sleeve, xy to horizontal two-dimension mobile station, mobile station fixed mount, mobile station link, z to vertically move platform, five dimension adjust
Save frame, Position sensitive detectors (PSD), stationary backplate, air supporting experiment porch, leveling dress according to claim 1
Put, it is characterised in that laser adjustment mounting bracket clamping laser is fixed on sleeve, on backboard;Probe is mounted in elasticity
By sleeve connection five times regualting frame on hinge, five times regualting frame is fixed on z on vertical displacement platform, and z leads to vertical displacement platform
Cross connecting plate to be connected to two horizontal position moving stage with xy, horizontal position moving stage is fixed on backboard;PSD is fixed on five times regualting frame
On, five times regualting frame is connected on backboard;The dynamic platform of wafer-supporting platform, essence, coarse motion platform form a whole below probe, and silicon chip exists
On wafer-supporting platform.
2. levelling device according to claim 1, it is characterised in that multiple phases respectively in plane on measurement silicon chip and probe
For the coordinate of the respective definitely point of zero plane, so as to obtain plane equation, obtain relative to the inclined of respective definitely zero plane
Gyration, so as to realize silicon chip from initial position to parallel with zero plane, to the process parallel with detecting probe surface.
3. levelling device according to claim 1, it is characterised in that probe measurement method mainly includes:Step 1:It will adjust
The position relationship of leveling device illustratively, which fixes, to be set, and regulation laser makes it be radiated at the upper surface center of direct write probe, instead
Laser after penetrating is irradiated on Position sensitive detectors (PSD) receiving screen, is formed flare, is obtained by software processing
It is placed in z to positional information, silicon chip on wafer-supporting platform, immediately below probe;Step 2:Laser is radiated at the of probe upper surface
It is some initial point, this point is (0,0,0) as the origin of absolute zero plane, and by x, y drives five dimensions to adjust to mobile station
Frame, so as to drive probe carry out x, y to movement, so as to measure the upper difference reflection laser of probe to PSD numerical value, obtain
Relative to the z of initial point to moving displacement value, while the value that x., y direction change can be as the coordinate in new point X1 x, y direction
Value, at the same using the facula information that Position sensitive detectors PSD is detected by software processing obtain z to knots modification,
New point X1 z coordinate, so as to obtain coordinates of the X1 in zero plane;Step 3:Step 2 is repeated several times and obtains the seat of multiple new points
Mark, the plane equation of probe upper surface is fitted, calculate the normal vector of the plane.
4. levelling device according to claim 1, it is characterised in that silicon chip measures leveling method, mainly including step 4:
Laser inclination angle is adjusted, laser is irradiated on silicon chip, through silicon chip refracted laser illumination to Position sensitive detectors (PSD)
Receiving screen on, formed flare, z is obtained to positional information by software processing;Step 5:Laser is radiated at silicon chip surface
First point be initial point, this point be (0,0,0) as the origin of the new absolute zero plane of silicon chip, smart by the drive of coarse motion platform
Dynamic platform and wafer-supporting platform, so as to drive silicon chip to carry out x, y to movement, so as to measure the upper difference reflection laser of probe to PSD
Numerical value, obtain z relative to initial point to moving displacement value, while the value that changes of x., y direction can be used as newly point X1 x, y
Coordinate value, at the same using the facula information that Position sensitive detectors PSD is detected by software processing obtain z to change
Amount, new point X1 z coordinate, so as to obtain coordinates of the X1 in zero plane;Step 6:Step 5 is repeated several times and obtains multiple new points
Coordinate, the plane equation of silicon chip surface is fitted, calculate the normal vector of the plane;Step 7:It is relative to calculate two normal vectors
The angular deflection of the positive unit vector of absolute zero plane Z axis, first adjusting silicon chip by the dynamic platform of nanometer essence makes its normal vector positive single with z
Bit vector is parallel, in the angular deflection of turnover probes upper surface normal vector and the absolute positive unit vector of zero plane Z axis, so that silicon
Piece surface is parallel to each other with photoetching direct write probe.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109916338A (en) * | 2019-02-28 | 2019-06-21 | 同济大学 | Wafer surface change of pitch angle precision measurement system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106444306A (en) * | 2016-08-09 | 2017-02-22 | 电子科技大学 | High-precision alignment device and method of axis under symmetric elastic clamping structure |
US20170277044A1 (en) * | 2016-03-25 | 2017-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning method and patterning apparatus for fabricating a resist pattern |
-
2017
- 2017-11-15 CN CN201711129272.1A patent/CN107748487A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170277044A1 (en) * | 2016-03-25 | 2017-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning method and patterning apparatus for fabricating a resist pattern |
CN106444306A (en) * | 2016-08-09 | 2017-02-22 | 电子科技大学 | High-precision alignment device and method of axis under symmetric elastic clamping structure |
Non-Patent Citations (2)
Title |
---|
尹作海: "基于机器视觉的光刻机调焦调平系统", 《中国优秀硕士学位论文全文数据库》 * |
肖志文: "LSPR接触光刻探针的力学状态分析及其实验研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109916338A (en) * | 2019-02-28 | 2019-06-21 | 同济大学 | Wafer surface change of pitch angle precision measurement system |
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Application publication date: 20180302 |