CN107731956A - A kind of absorbing layer of thin film solar cell preparation technology control method - Google Patents
A kind of absorbing layer of thin film solar cell preparation technology control method Download PDFInfo
- Publication number
- CN107731956A CN107731956A CN201710800854.1A CN201710800854A CN107731956A CN 107731956 A CN107731956 A CN 107731956A CN 201710800854 A CN201710800854 A CN 201710800854A CN 107731956 A CN107731956 A CN 107731956A
- Authority
- CN
- China
- Prior art keywords
- signal
- feed back
- control
- control system
- longitudinal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 56
- 230000011664 signaling Effects 0.000 claims abstract description 33
- 238000004886 process control Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 238000009826 distribution Methods 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 27
- 229910052755 nonmetal Inorganic materials 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000033228 biological regulation Effects 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 5
- 238000003892 spreading Methods 0.000 claims description 4
- 230000007480 spreading Effects 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 3
- 230000009123 feedback regulation Effects 0.000 claims description 3
- 238000001883 metal evaporation Methods 0.000 claims description 2
- 238000004088 simulation Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000008054 signal transmission Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000004044 response Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000009740 moulding (composite fabrication) Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000001020 rhythmical effect Effects 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of absorbing layer of thin film solar cell preparation technology control method, the process control method realizes technology controlling and process by input unit, signal pickup assembly, signal feed back control system, and the process control method comprises the following steps：S1, required according to manufacturing parameter, input control variable and scalar quantity are set on input unit；S2, the optical signalling of setting signal harvester collection input unit are simultaneously transmitted to signal feed back control system；S3, signal feed back control system convert optical signals into output control variable and scalar quantity and contrasted, and judge and form analog signal instruction to transmit to input unit；S4, input unit instructs according to analog signal judges adjustment input control variable, and repeat step S2, S3.Process control method provided by the invention realizes closed-loop control production process, and real-time adjust automatically parameter, response speed is high, realizes the control of absorbed layer uniformity, ensures technology stability and accuracy, improves the yields of battery chip.
Description
Technical field
The present invention relates to field of thin film solar cells, is related to a kind of multicomponent compound film solar battery obsorbing layer system
Standby process control method.
Background technology
Thin-film solar cells, because its is green, conventional crystalline silicon battery is substituted as second generation heliotechnics, is had wide
Wealthy market prospects.Thin film solar cell technologies, typically using multi-element compounds semiconductor as absorbed layer, such as CIGSSe
（Copper indium gallium sulphur selenium）、CIGS（CIGS）、CZTS（Copper-zinc-tin-sulfur）、CZTSe（Copper-zinc-tin-selenium）Deng.This based thin film solar electricity
Key prepared by pond absorbed layer scale is：1st, the realization of absorbed layer each element atom ratio and gradient distribution；2nd, absorbed layer is each
Elements Atom automatically controls with the accurate of when gradient distribution.
In existing industrialized absorbed layer film forming preparation technology, mainstream technology route is polynary coevaporation hair and sputtering selenizing
Method.Its absorbed layer each element atom ratio and gradient distribution realization and control principle be：According to absorbed layer thicknesses of layers and member
Plain atom ratio and gradient Spreading requirements, different proportion metal sputtering or evaporation according to the preset each distribution layer of simulation model
Source.Each input variable actual value is controlled near setting value, each element is detected offline in total suction according to certain frequency sample
Receive layer on amount than with its distributing homogeneity in substrate.
The essence of film forming preparation technology is On-line Control at present and what is adjusted is input control variable, and actual film layer
Elements Atom with when each film layer gradient be distributed this output control variable detected and adjusted in real time, and
Could be obtained merely by the offline detection of certain frequency, but at present it is general such as X-ray fluorescence spectra detection method only
Amount ratio of each element on total absorbed layer can only be obtained, the amount of element ratio that film layer is respectively distributed in absorbed layer can not be measured, so as to
Accurate gradient distribution can not be obtained, uniformity can not be also adjusted, be the control method of a kind of imperfection, low-response.
Therefore seek it is a kind of can on-line real-time measuremen absorbed layer be respectively distributed film layer Elements Atom proportioning and gradient distribution
Etc. output control variable, Real-time Feedback simultaneously adjusts the inputs such as the sputtering power of each sputtering source or evaporation source, evaporation rate control
Variable accurate to control on absorber thickness direction each element atom ratio and the closed loop control method of gradient distribution for film
Solar battery obsorbing layer scale prepares great meaning.
The content of the invention
It is an object of the invention to provide a kind of absorbing layer of thin film solar cell preparation technology control method, solves online real
When detection and synchronous precision control closed loop control method.
In order to solve the above technical problems, the present invention adopts the following technical scheme that：
A kind of absorbing layer of thin film solar cell preparation technology control method of the present invention, the process control method are filled by inputting
Put, control of signal pickup assembly and signal the feed back control system realization to solar battery obsorbing layer preparation technology, the work
Skill control method comprises the following steps：S1, the input unit includes source metal and non-metal source, according to thin-film solar cells
Absorbed layer thicknesses of layers and graded elemental Spreading requirements, set the input of each distribution layer source metal and non-metal source to control respectively and become
Amount, and each distribution layer output control variable calibration value is set；S2, the signal pickup assembly include longitudinal fluorescence detector and horizontal stroke
To fluorescence detector, the metallic element of longitudinal fluorescence detector acquisition distribution layer source metal and the nonmetallic member of non-metal source
The optical signalling of element, the lateral optical detector gather the optics letter of each distribution layer accumulation nonmetalloid and metallic element
Number, and the optical signalling is transmitted to signal feed back control system；S3, the signal feed back control system are provided with signal and turned
Change and feedback unit and control unit, the signal conversion and feedback unit turn the optical signalling received by calculating processing
Output control variable is changed to, and by output control variable transferring to control unit, control unit judges what is set with input unit
Output control variable calibration value compares, and judges the deviation size of output control variate-value and output control variable calibration value, believes
Number conversion and feedback unit will determine that result be converted to analog signal instruction transmit to input unit；S4, if step S3 judge it is defeated
Go out the deviation of control variable value and output control variable calibration value in the range of technique tolerance, then export analog signal instruction
Keep input control variable constant, otherwise input unit instructs according to analog signal resets input control variable, repeat step S2,
S3 is to the deviation of output control variate-value and output control variable calibration value in the range of technique tolerance.Signal in the present invention
Harvester includes but is not limited to all kinds of detectors based on atomic absorption spectrum, atomic emission spectrum principle；The present invention passes through
Input unit sets input control variable prepared by solar battery obsorbing layer, and signal pickup assembly uninterruptedly monitors solar-electricity
The uniformity of the content and nonmetalloid of metallic element and nonmetalloid on the absorbed layer of pond, the light of signal pickup assembly output
Learn strength signal to transmit to signal feedback device, the light intensity analog signal of output is converted to output control and become by signal feedback device
Amount compares with calibration value, is transmitted to input unit according to comparison result formation analog signal instruction and become so as to adjust input control
Amount, input unit, signal pickup assembly, signal conversion and feedback device is formed a supervisory system of closed, realize online real
When monitor and the adjustment of input control variable, without sampling offline detection, improve production efficiency and the quality of production.
Further, the source metal includes metal sputtering source and metal evaporation sources, and the non-metal source includes nonmetallic
Evaporation source.The present invention uses general solar battery obsorbing layer preparation facilities, suitable for the production and application of like product.
Yet further, the non-metal source is provided with longitudinal input block, the lateral optical detector collection longitudinal direction
The optical signalling of the nonmetalloid of input block.Set longitudinal input block to expand nonmetalloid in non-metal source to exist
The spray regime on solar battery obsorbing layer surface, be advantageous to improve distribution consistency degree of the nonmetalloid on absorbed layer, together
When by the distribution situation of each distribution layer metallic element of lateral optical detector monitors Real-time Feedback and nonmetalloid, and longitudinal direction
The window or Angular displacement control device of input block and non-metal source include but is not limited in general stepper motor and servomotor.
Yet further, the lateral optical detector sets 3 detection probes, corresponds to the longitudinal input block of monitoring respectively
Upper, middle and lower.Lateral optical detector is used for the distribution consistency degree for monitoring nonmetalloid, due to nonmetalloid
Entering coating chamber in the form of steam, the non-uniform temperature of absorbed layer upper, middle and lower easily causes nonmetalloid skewness,
Therefore set 3 detection probes correspondingly to detect the upper, middle and lower of longitudinal input block, ensure the accurate of monitoring result
Degree, improve the quality of product.
Yet further, the input of the source metal controls the sputtering work(that variable-definition is each distribution layer different metal ratio
Rate or evaporation rate, the input of the non-metal source control the valve opening that variable-definition is each distribution layer, the longitudinal direction input
It is each distribution layer openning opening degree that the input of unit, which controls variable-definition,.
Yet further, the signal feed back control system includes signal feed back control system α and signal feedback control fills
β is put, the signal feed back control system α receives the optical signalling of longitudinal fluorescence detector collection, and optical signalling is passed through into meter
Calculation processing is converted to output control variable, and the output control variable-definition is Rp（k）=, W is nonmetallic member in the formula
Plain i optical signalling value, WmFor metallic element j optical signalling value, Rp(k)Believe for the optics of nonmetalloid and metallic element
Number ratio.
Yet further, the signal feed back control system β receives the optical signalling of lateral optical detector collection, and will
Optical signalling is converted to output control variable by calculating processing, and the output control variable-definition isTB=Wt-Wb,CE=
Wm-(Wt+Wb), in the formulaTBFor longitudinal output device both ends nonmetalloid signal strength variance,CEIt is defeated for longitudinal direction
Go out the nonmetalloid signal strength variance with both ends, W in the middle part of devicetFor the nonmetalloid optics at the top of longitudinal output device
Signal value, WbFor the nonmetalloid optical signalling value of longitudinal output bottom of device, WmTo be nonmetallic in the middle part of longitudinal output device
Element optical signal value.
Yet further, the optical signalling value that the signal feed back control system α gathers longitudinal fluorescence detector calculates
Be converted to reality output control variable Rp（k）It is compared with calibration value, and comparison result is converted into analog signal instruction feedback
Sputtering power or evaporation rate, nonmetallic evaporation source controlling opening of valve, the signal feed back control system β are adjusted to source metal
The optical strength signal value that lateral optical detector gathers is calculated and is converted to reality output control variableTBWithCERespectively
It is compared with output control variable calibration value, and comparison result is converted into analog signal instruction feedback and gives longitudinal direction input list
Member, the uniformity of adjustment control openning opening degree.
Yet further, signal feed back control system α and signal the feed back control system β is provided with control unit, institute
State control unit control signal feed back control system α and signal feed back control system the β caused signal during feedback regulation
Transmission deviation.Control unit is by setting gain threshold, integration and sampling period, to signal feedback unit α and signal feedback
Fluctuation during first β regulations carries out PI controls, improves response speed, eliminates steady-state error.The signal feedback unit α, letter
Number feedback unit β and control unit include but is not limited to single-chip microcomputer, AD/DA Data collecting conversion devices, software emulation control etc..
Compared with prior art, advantageous effects of the invention：
Firstth, closed-loop control, it is simple to operate.The present invention sets input control variable and output control variable to demarcate by input unit
Value, the optical signalling that metallic element and nonmetalloid are gathered by signal pickup assembly are transmitted to signal feed back control system,
The signal conversion of signal feed back control system and feedback unit carry out signal conversion to signal, and control unit is to the signal after conversion
Carry out analysis judgement, signal conversion and feedback unit and analysis result formation analog regulation signal is fed back into input unit, formed
One closed loop cycle control system；Each element atom ratio and gradient are distributed in existing solar battery obsorbing layer preparation process
Realize and control is needed by personnel control input variable actual value near calibration value, production operation complexity is cumbersome, the present invention
The synchronous progress of i.e. achievable production and monitoring regulation is set by technological parameter, simplifies operating procedure, improves production efficiency.
Secondth, real-time adjust automatically technological parameter, fast response time.The present invention forms closed-loop control system, signal acquisition
Device gathers the optical strength signal of resultant metal element and nonmetalloid in real time, and signal feed back control system is to collection in real time
To signal transformational analysis after feed back to input unit, adjusting process parameter, sampled without operating personnel by intervals
Offline inspection, further according to testing result adjusting process parameter, improve the response speed that production line found and solved product quality problem
Degree, reduce poor products rate.
3rd, the distribution of solar battery obsorbing layer gradient and uniformity controlling are realized, improves the quality of product.Solar-electricity
Prepared by pond absorbed layer scale is generally more one-step film formings, and existing process is detected detected using X-ray fluorescence spectra offline, is only only capable of surveying
Measure amount of element ratio and distributing homogeneity on total absorbed layer, can not monitor and adjust each distribution layer amount of element ratio and
Distributing homogeneity, it can not monitor and adjust the distribution of the graded elemental on absorber thickness direction, cause the fraction defective of product high；
The present invention uses the detecting instrument based on atomic absorption spectrum, atomic emission spectrum principle, sets Longitudinal Surveillance and laterally monitors,
Each absorbed layer metallic element of Longitudinal Surveillance, the content of nonmetalloid and the horizontal detection nonmetalloid uniformity, are realized to too
It is positive can battery obsorbing layer amount of element when Elemental redistribution uniformity controlling, improve the quality of product.
Brief description of the drawings
Illustrate to be described further invention below in conjunction with the accompanying drawings.
Fig. 1 is absorbing layer of thin film solar cell preparation technology control method schematic diagram of the present invention；
Fig. 2 is the absorbed layer atom distribution map of absorbing layer of thin film solar cell preparation technology control method of the present invention.
Description of reference numerals：11st, source metal；12nd, non-metal source；21st, longitudinal fluorescence detector；22nd, lateral optical detects
Device；31st, signal feed back control system α；32nd, signal feed back control system β；4th, control unit.
Embodiment
As depicted in figs. 1 and 2, a kind of absorbing layer of thin film solar cell preparation technology control method, it is characterised in that：Institute
State being controlled by input unit, signal pickup assembly and signal feed back control system for process control method, the technology controlling and process
Method specific implementation step is as follows：
S1,3 equidistant source metals 11 arranged side by side are set in coating chamber, source metal is the twin copper and indium gallium rotary target material of intermediate frequency,
Bottom between source metal 11 sets non-metal source 12, and non-metal source is selenium tank, and the nozzle of non-metal source 12 is connected by manifold
To longitudinal input unit 13, longitudinal input unit 13 is placed in film forming chamber body, according to absorbing layer of thin film solar cell film
Thickness degree and graded elemental Spreading requirements, setting source metal 11 are 15kw in the sputtering power of each distribution layer different metal ratio,
Coating material transmission speed is 25 inch/minutes, and non-metal source 12 is 42% in the valve opening of each distribution layer, longitudinal direction input dress
It is 61% that 13, which are put, in each distribution layer openning opening degree, and sets each input control quantity calibration value respectively；
S2, the light of the copper and indium gallium of the longitudinal acquisition distribution layer source metal of fluorescence detector 21 sputtering and the selenium of non-metal source evaporation is set
Signal is learned, monitoring position is solar battery obsorbing layer centre position；Set lateral optical detector 22 that 3 probes are set, point
The position of upper, middle and lower three of longitudinal output device 13 Dui Ying not be monitored, gathers each distribution layer accumulation nonmetalloid
With the optical signalling of metallic element, longitudinal fluorescence detector 21 transmits the optical signalling collected to signal feed back control system
α 31, lateral optical detector transmit optical signalling to signal feed back control system β 32.
The optical signalling received is passed through signal conversion formula R by S3, the signal feed back control system α 31p（k）=Meter
Calculation is converted to output control variable, with each distribution layer output control variable Rp（k）Calibration value compares, signal feed back control system β 32
The optical signalling received is passed through into signal conversion formulaTB=Wt-Wb,CE=Wm-(Wt+Wb) calculate be converted to output control
Variable, compared with calibration value 0, and judge the deviation size of output control variate-value and each calibration value, will determine that result is changed
Transmitted for analog signal instruction to signal input apparatus；
S4, signal feed back control system α 31 described in step S3 and signal feed back control system β 32 judge output control variate-value
And the deviation of output control control variable calibration value is within technique tolerance 10%, the source metal 11, the and of non-metal source 12
The input control variable of longitudinal input block 13 keeps constant, if the signal feed back control system judges output control variate-value
And the deviation of output control variable calibration value is beyond technique tolerance 10%, the source metal 11, nonmetallic former 12 and longitudinal direction
Input block 13 according to analog signal instruct regulation input control variable, repeat step S2, step S3 to absorbing membranous layer thickness and
Graded elemental distribution meets the requirements；The signal feed back control system α 31 and signal feed back control system β 32 are single with control respectively
Member 4 connects, and it is 5 that control unit 4, which sets gain threshold, for the conversion of adjustment signal and the stride of feedback device feedback regulation deviation；
It is 0.3 to set integrated value, and deviator amendment is carried out to the rhythmic sum of the deviations of institute before；It is 0.3 to set the sampling period, for control
Unit 4 is changed to signal and feedback device carries out the cycle of deviation adjusting, adjusts signal conversion by control unit 4 and feedback fills
The fluctuation put, response speed is improved, and eliminate steady-state error.
From the foregoing, it will be observed that process control method provided by the invention is handled the multi input of complexity, output node, with phase
Accurate automated closed-loop control is carried out to simple mode, improves responsiveness, accuracy, by realizing that closed loop monitors in real time,
Production efficiency is improved, ensures product quality and reduces cost.
Embodiments described above is only the principle to the present invention and the illustrative embodiments that use, but of the invention
It is not limited thereto.For those skilled in the art, the situation of spirit and substance of the present invention is not being departed from
Under, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
- A kind of 1. absorbing layer of thin film solar cell preparation technology control method, it is characterised in that：The process control method leads to Cross the control of input unit, signal pickup assembly and the realization of signal feed back control system to solar battery obsorbing layer preparation technology System, the process control method comprise the following steps：S1, the input unit include source metal（11）And non-metal source（12）, according to absorbing layer of thin film solar cell film layer Thickness and graded elemental Spreading requirements, each distribution layer source metal is set respectively（11）And non-metal source（12）Input control become Amount, and each distribution layer output control variable calibration value is set；S2, the signal pickup assembly include longitudinal fluorescence detector（21）With lateral optical detector（22）, longitudinal light Learn detector（21）Acquisition distribution layer source metal（11）Metallic element and non-metal source（12）Nonmetalloid optics letter Number, the lateral optical detector（22）The optical signalling of each distribution layer accumulation nonmetalloid and metallic element is gathered, and will The optical signalling is transmitted to signal feed back control system；S3, the signal feed back control system are provided with signal conversion and feedback unit and control unit, signal conversion and The optical signalling received is converted to output control variable by feedback unit by calculating processing, and by output control variable transferring To control unit, control unit judges to compare with the output control variable calibration value that input unit is set, and judges output control The deviation size of variate-value and output control variable calibration value, signal conversion and feedback unit will determine that result is converted to simulation letter Number instruction is transmitted to input unit；S4, if step S3 judges the deviation of output control variate-value and output control variable calibration value in technique tolerance model In enclosing, then output analog signal instruction holding input control variable is constant, and otherwise input unit is reset according to analog signal instruction The deviation of input control variable, repeat step S2, S3 to output control variate-value and output control variable calibration value permits in technique Perhaps in deviation range.
- A kind of 2. absorbing layer of thin film solar cell preparation technology control method according to claim 1, it is characterised in that： The source metal（11）Including metal sputtering source and metal evaporation sources, the non-metal source（12）Including nonmetallic evaporation source.
- A kind of 3. absorbing layer of thin film solar cell preparation technology control method according to claim 1, it is characterised in that： The non-metal source（12）It is provided with longitudinal input block（13）, the lateral optical detector（22）Gather longitudinal input block （13）Nonmetalloid optical signalling.
- 4. according to the lateral optical detector described in claim 1 or claim 3, it is characterised in that the lateral optical detection Device（22）3 detection probes are set, correspond to the longitudinal input block of monitoring respectively（13）Upper, middle and lower.
- A kind of 5. absorbing layer of thin film solar cell preparation technology control according to any one of claims 1 to 3 claim Method processed, it is characterised in that：The source metal（11）Input control variable-definition being splashed for each distribution layer different metal ratio Penetrate power or evaporation rate, the non-metal source（12）Input control variable-definition be each distribution layer valve opening, it is described Longitudinal input block（13）Input to control variable-definition be each distribution layer openning opening degree.
- A kind of 6. absorbing layer of thin film solar cell preparation technology control method according to claim 1, it is characterised in that： The signal feed back control system includes signal feed back control system α（31）With signal feed back control system β（32）, the signal Feed back control system α（31）Receive longitudinal fluorescence detector（21）The optical signalling of collection, and by optical signalling by calculating at Reason is converted to output control variable, and the output control variable-definition is Rp（k）=, W is nonmetalloid i in the formula Optical signalling value, WmFor metallic element j optical signalling value, Rp(k)For the optical signalling of nonmetalloid and metallic element ratio Value.
- 7. signal feed back control system according to claim 6, it is characterised in that：The signal feed back control system β （32）Receive lateral optical detector（22）The optical signalling of collection, and optical signalling is converted into output control by calculating processing Variable processed, the output control variable-definition areTB=Wt-Wb,CE=Wm-(Wt+Wb), in the formulaTBIt is defeated for longitudinal direction Go out device both ends nonmetalloid signal strength variance,CEFor the nonmetalloid signal in the middle part of longitudinal output device with both ends Strength variance, WtFor the nonmetalloid optical signalling value at the top of longitudinal output device, WbFor the non-gold of longitudinal output bottom of device Belong to element optical signal value, WmFor the nonmetalloid optical signalling value in the middle part of longitudinal output device.
- 8. according to the signal feed back control system described in claim 6 or claim 7, it is characterised in that：The signal feedback Control device α（31）By longitudinal fluorescence detector（21）The optical signalling value of collection, which calculates, is converted to reality output control variable Rp（k）It is compared with calibration value, and comparison result is converted into analog signal instruction feedback to source metal（11）Regulation sputtering work( Rate or evaporation rate, nonmetallic evaporation source（12）Controlling opening of valve, the signal feed back control system β（32）By lateral optical Detector（22）The optical strength signal value of collection, which calculates, is converted to reality output control variableTBWithCERespectively with output Control variable calibration value is compared, and comparison result is converted into analog signal instruction feedback to longitudinal input block（13）, The uniformity of adjustment control openning opening degree.
- 9. signal feed back control system according to claim 6, it is characterised in that：The signal feed back control system α （31）With signal feed back control system β（32）It is provided with control unit（4）, described control unit（4）Control signal feedback control Device α（31）With signal feed back control system β（32）The caused signal transmission deviation during feedback regulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710800854.1A CN107731956B (en) | 2017-09-07 | 2017-09-07 | Method for controlling preparation process of thin-film solar cell absorption layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710800854.1A CN107731956B (en) | 2017-09-07 | 2017-09-07 | Method for controlling preparation process of thin-film solar cell absorption layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107731956A true CN107731956A (en) | 2018-02-23 |
| CN107731956B CN107731956B (en) | 2022-07-05 |
Family
ID=61205790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710800854.1A Active CN107731956B (en) | 2017-09-07 | 2017-09-07 | Method for controlling preparation process of thin-film solar cell absorption layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107731956B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000171840A (en) * | 1998-12-02 | 2000-06-23 | Agency Of Ind Science & Technol | Laminated thin-film optical element and optical control method and optical controller using the same |
| US20100247745A1 (en) * | 2007-09-12 | 2010-09-30 | Dominik Rudmann | Method for manufacturing a compound film |
| US20110089348A1 (en) * | 2008-07-14 | 2011-04-21 | Moshe Finarov | Method and apparatus for thin film quality control |
| CN105514218A (en) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer |
-
2017
- 2017-09-07 CN CN201710800854.1A patent/CN107731956B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000171840A (en) * | 1998-12-02 | 2000-06-23 | Agency Of Ind Science & Technol | Laminated thin-film optical element and optical control method and optical controller using the same |
| US20100247745A1 (en) * | 2007-09-12 | 2010-09-30 | Dominik Rudmann | Method for manufacturing a compound film |
| US20110089348A1 (en) * | 2008-07-14 | 2011-04-21 | Moshe Finarov | Method and apparatus for thin film quality control |
| CN105514218A (en) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107731956B (en) | 2022-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2019206138A1 (en) | Evaporation rate control device, method and apparatus for evaporation source, and storage medium | |
| CN101276209A (en) | Steel plate cooling control analog system and method | |
| CN110322014A (en) | A kind of finished cement specific surface area prediction technique based on BP neural network | |
| CN103119704A (en) | In-line metrology system and method | |
| CN106840955B (en) | Forest land soil evaporator capable of automatically detecting | |
| CN105675432A (en) | Online detection method, online control method and online detection control system for papermaking-method reconstituted tobacco coating ratio | |
| CN102385357A (en) | Automatic control system and method for coal slime flocculation settling | |
| CN105743107A (en) | Control method for frequency regulation of electric power isolated network system | |
| DE69615884T2 (en) | Method and device for producing chalcopyrite semiconductor thin films | |
| CN106824481B (en) | A kind of stabilization enters to grind the method for powder specific-surface area detection | |
| CN106602986A (en) | Sunshine tracking system, solar energy application device and sunshine tracking method | |
| CN114481232A (en) | Electrolytic copper foil surface density uniformity online control system and control method | |
| CN107731956A (en) | A kind of absorbing layer of thin film solar cell preparation technology control method | |
| CN101533265B (en) | Feedback control method for calcination process in rotary kiln | |
| CN107771487A (en) | A kind of winter wheat variable-rate fertilization control system | |
| CN105514218B (en) | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer | |
| DE10256909B3 (en) | Process for producing a chalcogenide semiconductor layer with optical in-situ process control and device for carrying out the process | |
| CN106300372B (en) | Wind-powered electricity generation field voltage control performance assessment method based on PMU data | |
| DE10329107A1 (en) | Method for determining the temperature of a semiconductor wafer in a rapid heating system | |
| CN103475301B (en) | AC motor rotating speed measuring method, AC motor rotating speed control method, and AC motor rotating speed control system | |
| CN103197275A (en) | Calibration method of light source irradiation direction | |
| CN113076524B (en) | Water turbine axis detection data optimization processing method based on ant colony algorithm | |
| CN106521390B (en) | A kind of strip continuous hot galvanizing zinc coat thickness control method based on database | |
| CN109509711A (en) | A kind of equipment and its monitoring method of real-time monitoring perovskite thin film quality of forming film | |
| King et al. | Regional soiling stations for PV: Design, calibration and installation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201223 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Beijing Huihong Technology Co.,Ltd. Address before: 517000 High-tech Five Road of Heyuan High-tech Development Zone, Guangdong Province Applicant before: GUANG DONG HANERGY THIN-FILM SOLAR Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20211026 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Dongjun new energy Co.,Ltd. Address before: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant before: Beijing Huihong Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20240930 Granted publication date: 20220705 |