CN107731906B - Multi-finger emitter SiGe HBT device - Google Patents
Multi-finger emitter SiGe HBT device Download PDFInfo
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- CN107731906B CN107731906B CN201710917513.2A CN201710917513A CN107731906B CN 107731906 B CN107731906 B CN 107731906B CN 201710917513 A CN201710917513 A CN 201710917513A CN 107731906 B CN107731906 B CN 107731906B
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 57
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
The invention discloses a multi-finger emitter SiGe HBT device which comprises a substrate, an oxide layer, a collector region, a base region and an emitter region which are sequentially arranged from bottom to top, wherein an isolation layer groove is formed in one side, connected with the base region, of the collector region, an emitter is arranged in the emitter region, and the emitter is of a multi-finger structure. The multi-finger emitter SiGe HBT device can improve the current gain of the device and the frequency characteristic of the device under the condition of not changing key parameters such as the doping concentration, the size and the like of the device, and can be better suitable for the field of radio frequency wireless communication.
Description
Technical Field
The invention belongs to the technical field of microelectronics and solid electronics, and relates to a multi-finger emitter SiGeHBT device.
Background
With the rapid development of global wireless communication technology (such as bluetooth technology, mobile phones, fixed phones, mobile broadband network receiving devices), the demand of radio frequency amplifiers is increasing, and the performance requirements of the most basic unit devices are also increasing. The silicon-based SiGe HBT has the characteristics of high frequency, high gain and low noise, and can be compatible with a silicon process, and the process cost is low, so that the silicon-based SiGe HBT has the advantages of high process controllability, high integration degree, low cost and the like compared with special process technologies such as GaAs, InP and the like. The noise coefficient, the power consumption and the like are greatly lower than those of a silicon bipolar device, so that the requirements of high speed, high precision and low power consumption required by further improving the performance of an analog integrated circuit are met, the flexibility is realized in the aspect of production, and the cost is saved. The SiGe HBT is introduced into a radio frequency circuit in a large scale, the requirement on the electrical performance of a device is more strict, and in the aspects of promoting the gain and the characteristic frequency of the device, the conventional single-emitter device generally adopts the methods of improving the concentration of an emitter region, reducing the concentration of a base region, improving the Ge component of the base region and reducing the width of the base region. When the measures are adopted by a common device, the breakdown voltage of the device is reduced, the base resistance of the device is improved, the thickness of the base epitaxial layer is reduced, and the misfit dislocation is easier to occur. Therefore, it is a more critical issue to increase the gain and the characteristic frequency of the device without changing the remaining electrical characteristics of the device.
Disclosure of Invention
The invention aims to provide a multi-finger emitter SiGe HBT device, which solves the problems that in the prior art, the device performance is improved, the base region width needs to be excessively reduced or the doping concentration needs to be improved, the breakdown voltage of the device is reduced, and mismatch dislocation is easy to occur.
The technical scheme adopted by the invention is that the multi-finger emitter SiGe HBT device comprises a substrate, an oxide layer, a collector region, a base region and an emitter region which are sequentially arranged from bottom to top, wherein an isolation groove is arranged on one side of the collector region connected with the base region, the emitter region is provided with an emitter, and the emitter is of a multi-finger structure.
The present invention is also characterized in that,
the emitter region is composed of polysilicon with thickness of 0.1-0.15 μm, and the polysilicon is doped with 8 × 1019cm-3～4×1020cm-3P ion of (2)
The base region is composed of SiGe with the thickness of 30 nm-35 nm, the content of Ge is 20% -30%, and the doping concentration is 9 × 1018cm-3～5×1019cm-3。
And poly auxiliary base regions with the width of 50 nm-60 nm are respectively arranged on two sides of the base region.
The collector region comprises a main collector region and a secondary collector region from top to bottom, the main collector region is connected with the base region, and the secondary collector region is connected with the oxide layer; isolation grooves are respectively arranged on the two sides of the main collector region and close to the connection part of the main collector region and the base region.
The collector region is composed of Si, the dopant is P ions, the thickness of the main collector region is 0.15-0.25 μm, the thickness of the secondary collector region is 0.1-0.16 μm, and the doping concentration of the main collector region is 8 × 1015cm-3～4×1016cm-3The concentration of the secondary collector region is 8 × 1018cm-3～3×1019cm-3。
The isolation groove is made of SiO with the width of 0.2-0.25 mu m2And (5) shallow trench.
And a polysilicon field plate is arranged in the isolation groove.
The width of the polysilicon field plate is 0.1-0.15 μm, and the height is 0.2-0.25 μm.
The substrate consists of Si doped with a concentration of 1 × 1015cm-3～5×1016cm-3The thickness of the substrate is 0.5-1.5 μm; SiO with oxide layer thickness of 0.1-0.5 micron2A buried layer.
The invention has the beneficial effects that the conventional emitter structure is changed into the multi-finger emitter structure, so that the injection ratio of the device is improved and the current gain of the device is improved under the condition that the main structure parameters such as doping concentration, emitter junction contact area, base region width and the like are not changed, and the improvement amplitude of the current gain of the device is different along with the change of the number of the emitter fingers; meanwhile, a polysilicon field plate is introduced into the shallow trench of the collector region, so that the barrier capacitance of an emitter junction and a collector junction is reduced, and the characteristic frequency and the highest oscillation frequency of the multi-finger emitter SiGe HBT are greatly improved. On the premise of not increasing the process difficulty, the compromise between the current gain and the frequency characteristic is well realized.
Drawings
FIG. 1 is a schematic diagram of the structure of a multi-finger emitter SiGe HBT device of the present invention;
fig. 2 is a schematic structural diagram of a conventional SiGe HBT device;
FIG. 3 is a Gummel plot of a multi-finger emitter SiGe HBT of the present invention;
FIG. 4 is a Gummel curve for a conventional SiGe HBT;
FIG. 5 is a graph of gain variation for different emitter index SiGe HBTs;
FIG. 6 is a graph of the characteristic frequency variation of a conventional SiGe HBT and different multi-fingered emitter SiGe HBTs;
FIG. 7 is a graph of the variation of the highest oscillation frequency of a conventional SiGe HBT and different multi-fingered emitter SiGe HBTs;
FIG. 8 is a comparison graph of characteristic frequencies before and after introducing a trench into a field plate in a collector region of a multi-finger emitter SiGe HBT structure;
FIG. 9 is a graph comparing the peak oscillation frequency before and after introducing trenches into the field plate for the collector region of a multi-finger emitter SiGe HBT;
fig. 10 is a graph comparing gain profiles before and after the introduction of a multi-finger emitter SiGe HBT collector region trench to a field plate.
In the figure, 1, a substrate, 2, an oxide layer, 3, a collector region, 4, a base region, 5, an emitter region, 6, an isolation groove and 7, a polysilicon field plate.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a structure of a multi-finger emitter SiGe HBT device, which is shown in figure 1 and sequentially comprises a substrate 1, an oxide layer 2, a collector region 3, a base region 4 and an emitter region 5 (a dotted line circled part) from bottom to top, wherein shallow trench isolation grooves 6 are respectively arranged on two sides of the collector region 3, and a polysilicon field plate 7 is arranged in the shallow trench isolation grooves 6.
Wherein the emitter region 5 is polysilicon with a thickness of 0.1-0.15 μm and a doping concentration of 8 × 1019cm-3-4×1020cm-3The dopant is P ions; the emitter of the emitter region 5 is a multi-finger structure.
The base region 4 is composed of SiGe with the thickness of 30 nm-35 nm, the content of Ge is 20% -30%, and the doping concentration is 9 × 1018cm-3-5×1019cm-3The dopant is B ion.
The collector region 3 is composed of Si and comprises a main collector region and a secondary collector region from top to bottom, the main collector region is connected with the base region 4, the secondary collector region is connected with the oxide layer 2, isolation grooves 6 are respectively arranged on two sides of the main collector region and near the connection of the main collector region and the base region 4, the thicknesses of the main collector region and the secondary collector region are respectively 0.15-0.25 mu m and 0.1-0.16 mu m, wherein the doping concentration of the main collector region is 8 × 1015cm-3～4×1016cm-3The concentration of the secondary collector region is 8 × 1018cm-3～3×1019cm-3And the dopant of the collector region is P ions.
The oxide layer 2 under the collector region 3 is SiO with the thickness of 0.1-0.5 mu m2A buried layer.
The substrate 1 is composed of Si, the dopant is B ion, the thickness is 0.5-1.5 μm, the doping concentration is 1 × 1015cm-3～5×1016cm-3. The width of the polysilicon field plate 7 in the collector region isolation groove 6 is 0.1-0.15 μm, and the height is 0.2-0.25 μm.
The structure of the conventional SiGe HBT device is as shown in fig. 2, and from bottom to top, the substrate, the oxide layer, the collector region, the base region, the emitter region, and both sides of the collector region are respectively provided with shallow trench isolations having the same size. In order to embody the advantages of the invention, the conventional SiGe HBT device and the multi-finger emitter SiGe HBT device provided by the invention are arranged, and doping is carried outFirstly, the emitter electrode of the conventional structure is changed into a multi-finger emitter, and the electrical characteristics of the two structures are compared (wherein the thickness of the emitter region 5 of the device is 0.1 mu m, and the doping concentration is 1 × 10)20cm-3The base region 4 has a thickness of 30nm and a doping concentration of 1 × 1019cm-3The collector region 3 comprises a main collector region and a secondary collector region from top to bottom, the thicknesses of the main collector region and the secondary collector region are respectively 0.2 mu m and 0.1 mu m, and the doping concentration of the main collector region is 2 × 1016cm-3Concentration of the secondary collector region is 1 × 1019cm-3(ii) a The oxide layer 2 is SiO with a thickness of 0.1 μm2Buried layer, substrate 1 with thickness of 1 μm and doping concentration of 1 × 1015cm-3(ii) a The width of the polysilicon field plate 7 in the collector region isolation trench 6 is 0.1 μm and the height is 0.2 μm). The Gummel curves of the conventional SiGe HBT device and the multi-finger emitter SiGe HBT device are shown in fig. 3 and 4. As can be seen from fig. 3 and 4, the gains of the multi-finger SiGe HBT and the conventional SiGe HBT are 188 and 151, respectively. The gain of the multi-finger emitter SiGe HBT is improved by about 25% compared with the conventional SiGe HBT. The main reason for improving the gain is that the electron potential barrier of the multi-finger emitter SiGe HBT is reduced, which is beneficial for electrons to enter the base region from the emitter region, meanwhile, the hole concentration entering the emitter region from the base region does not change obviously, the injection ratio of emitter junction minority carriers is improved, and finally, the current gain of the device is improved.
The dc gain of the device at different emitter indexes is shown in fig. 5, and it can be seen from the graph that the gain of the SiGe HBT is gradually increased as the emitter index is increased. The characteristic frequency and the highest oscillation frequency distribution of the conventional SiGe HBT and the multi-fingered emitter SiGe HBT at different indexes are shown in fig. 6 and fig. 7, respectively. As can be seen from fig. 6 and 7, as the index of the multi-fingered emitter increases, the characteristic frequency and the maximum oscillation frequency of the SiGe HBT are both gradually decreased. When the multi-finger emitter is six fingers, the amplitude of the characteristic frequency drop of the device is maximum. The characteristic frequency of the device is related to the total transit time of carriers, and the highest oscillation frequency is closely related to the characteristic frequency. The relationship between the characteristic frequency and the highest oscillation frequency is as follows:
the transit time can be expressed as:
τec＝τb+τe+τc+τd+τscr(2)
τe＝(re+rc)(Cje+Cjc) (3)
τc＝rc·Cjc(4)
wherein f isTIs a characteristic frequency, fmaxAt the highest oscillation frequency, τecFor total transit time, τbFor base transit time, τeFor emitter delay time, τcFor collector delay time, τdFor storing time, τ, of the emission zonescrTo collect junction space charge region transit time, reIs the emitter resistance, rcIs the collector resistance, RbA base resistance; cjc，CjeRespectively, the barrier capacitance of the emitter junction and the collector junction.
The characteristic frequency and the transit time tau of the device can be known from the formula (2)ecIn connection with, delay time τ of emittereDepending on the magnitude of the emitter junction barrier capacitance. In a multi-finger emitter SiGe HBT, the total emitter junction barrier capacitance is equal to the parallel connection of six adjacent emitter junction capacitances. Because of the existence of lateral diffusion, the capacitance of a single emitter is increased, the total emitter junction barrier capacitance of the multi-finger emitter SiGe HBT is larger than that of the conventional SiGe HBT, and the emitter delay time taueIncreasing, the characteristic frequency of the device and the highest oscillation frequency decreases accordingly.
On the basis of a conventional SiGe HBT, a conventional emitter is changed into a multi-finger emitter, so that the current gain of a device is improved, and aiming at the condition that the frequency characteristic of the device is deteriorated along with the improvement of the current gain, the method is improved in a collector region groove of the multi-finger emitter, and the improved method is to introduce an undoped polysilicon field plate into shallow groove isolation of a collector region.
Fig. 8 shows a comparison of the characteristic frequencies before and after introducing the field plate, from which it can be seen that the characteristic frequency before introducing the field plate into the trench of the multi-finger emitter sige hbt collector region is 33.9Ghz, and after introducing the field plate into the trench, the characteristic frequency of the device is greatly improved. The characteristic frequency of the novel multi-finger emitter SiGe HBT reaches 45.5GHz, and compared with the multi-finger SiGe HBT without introducing a field plate, the characteristic frequency of the device is improved by about 34%. The maximum oscillation frequency of the novel multi-finger emitter SiGe HBT reaches 85.5GHz, and the comparison of the maximum oscillation frequency is shown in FIG. 9, so that the maximum oscillation frequency of the device is improved by about 19% compared with the multi-finger emitter SiGe HBT without introducing a field plate. From the formula (3), under the condition that the base region transit time is not changed, the collector delay time tau is obtainedcAnd emitter delay time τeIs the main factor affecting the characteristic frequency. The introduction of the field plate can reduce the barrier capacitance of the emitter junction and the collector junction, the barrier capacitance is reduced, the delay time of the collector and the delay time of the emitter are reduced, the total transit time is reduced, and the characteristic frequency and the highest oscillation frequency of the device are improved to a certain extent.
The invention improves the characteristic frequency of the device and does not reduce the direct current gain of the device. The gain ratio before and after the introduction of the multi-finger emitter SiGe HBT into the field plate is shown in FIG. 10. It can be seen that the gain of the device is not reduced by introducing the field plate, and the gain of the device is raised to a certain extent. The field plate is introduced into the groove of the collector region, so that the injection ratio of the emission junction of the device cannot be reduced.
According to the invention, the conventional emitter structure is changed into a multi-finger emitter structure, so that the barrier height of the emitter junction is reduced, the injection ratio of minority carriers of the emitter junction of the device is improved, and the current gain of the device is improved. And a polysilicon field plate is introduced into the groove of the collector region, so that the barrier capacitance of the emitter junction and the collector junction is reduced, and the frequency characteristic of the device is improved. Finally, the gain of the new structure of the SiGe HBT can be improved to 190, the characteristic frequency and the highest oscillation frequency can respectively reach 45.5GHz and 85.5GHz, and the current gain and the frequency characteristic are improved under the condition that the process difficulty is not increased.
Claims (7)
1. A multi-finger emitter SiGe HBT device is characterized by comprising a substrate (1), an oxide layer (2), a collector region (3), a base region (4) and an emitter region (5) which are sequentially arranged from bottom to top, wherein an isolation groove (6) is formed in one side, connected with the base region (4), of the collector region (3), an emitter is arranged in the emitter region (5), and the emitter is of a multi-finger structure;
a poly auxiliary base region with the width of 50 nm-60 nm is arranged on each of two sides of the base region (4);
the collector region (3) comprises a main collector region and a secondary collector region from top to bottom, the main collector region is connected with the base region (4), and the secondary collector region is connected with the oxide layer (2); isolation grooves (6) are respectively arranged on two sides of the main collector region and close to the connection part of the main collector region and the base region (4);
the collector region (3) is composed of Si, the dopant is P ions, the thickness of the main collector region is 0.15-0.25 mu m, the thickness of the secondary collector region is 0.1-0.16 mu m, and the doping concentration of the main collector region is 8 × 1015cm-3~4×1016cm-3The concentration of the secondary collector region is 8 × 1018cm-3~3×1019cm-3。
2. The SiGe HBT device as claimed in claim 1, wherein the emitter region (5) is comprised of polysilicon having a thickness of 0.1 μm to 0.15 μm, the polysilicon being doped with a concentration of 8 × 1019cm-3~4×1020cm-3P ion of (2).
3. The SiGe HBT device as claimed in claim 1, wherein the base region (4) is composed of SiGe with a thickness of 30 nm-35 nm, Ge content of 20% -30%, and doping concentration of 9 × 1018cm-3~5×1019cm-3。
4. The SiGe HBT device as claimed in claim 1, wherein the isolation trench (6) is SiO with a width of 0.2 μm to 0.25 μm2And (5) shallow trench.
5. A multi-finger emitter SiGe HBT device according to any one of claims 1-4, wherein a polysilicon field plate (7) is provided in the isolation trench (6).
6. The SiGe HBT device of claim 5, wherein the polysilicon field plate (7) has a width of 0.1-0.15 μm and a height of 0.2-0.25 μm.
7. A multi-fingered emitter SiGe HBT device as claimed in claim 1, characterized in that said substrate (1) is composed of Si, doped with a concentration of 1 × 1015cm-3~5×1016cm-3The thickness of the substrate (1) is 0.5-1.5 μm; the oxide layer (2) is SiO with a thickness of 0.1-0.5 μm2A buried layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103165573A (en) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | Vertical parasitic PNP device in Bipolar CMOS (BiCMOS) technology and manufacturing method thereof |
| CN107026196A (en) * | 2016-02-02 | 2017-08-08 | 格罗方德半导体公司 | The bipolarity junction transistor without trench isolations with expolasm device area |
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| US20140021603A1 (en) * | 2012-07-23 | 2014-01-23 | Rf Micro Devices, Inc. | Using an interconnect bump to traverse through a passivation layer of a semiconductor die |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103165573A (en) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | Vertical parasitic PNP device in Bipolar CMOS (BiCMOS) technology and manufacturing method thereof |
| CN107026196A (en) * | 2016-02-02 | 2017-08-08 | 格罗方德半导体公司 | The bipolarity junction transistor without trench isolations with expolasm device area |
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